Method, device and computer readable storage medium for detecting uniformity of silicon-based material

Abstract

The application relates to a silicon-based material uniformity detection method, a device and a computer readable storage medium. The method comprises the following steps: acquiring a plurality of test luminescence brightness values corresponding to a plurality of test regions of a silicon-based material to be detected in a photoluminescence test process, the plurality of test regions covering the overall surface area of the silicon-based material to be detected; converting each test luminescence brightness value into a test doping concentration according to a first standard curve of the silicon-based material to be detected, the first standard curve representing the corresponding relationship between the doping concentration and the luminescence brightness value; according to the membership relationship between the plurality of test doping concentrations and a preset doping concentration range, counting the total number of test qualified regions with qualified doping concentrations in the plurality of test regions; and performing doping concentration detection on the silicon-based material to be detected according to the total number of test qualified regions and the total number of test regions corresponding to the plurality of test regions. The method improves the detection effect of the uniformity detection of the silicon-based material.

Description

Technical Field

[0001] This application relates to the field of photovoltaic cell technology, and in particular to a method, apparatus and computer-readable storage medium for detecting the uniformity of silicon-based materials. Background Technology

[0002] With the continuous development of science and technology, photovoltaic cells have been widely used in people's lives. As the core component of photovoltaic cells, silicon-based materials directly determine the photoelectric conversion efficiency of photovoltaic cells through their electrical properties. Therefore, it is essential to conduct uniformity testing on silicon-based materials. Uniformity refers to the degree of consistency of physical properties, chemical composition, and geometric parameters of different regions within a semiconductor material.

[0003] Currently, taking the detection of doping concentration uniformity as an example, the four-probe measurement method is usually used to measure the doping concentration of silicon-based materials. However, since the four-probe measurement method is a point-contact measurement, the measured doping concentration is easily affected by factors such as probe spacing, pressure, and measurement point position. At the same time, the direct contact between the probe and the surface of the silicon-based material increases the risk of contamination of the silicon-based material, which in turn leads to low detection accuracy and low detection efficiency. Therefore, the current detection effect of uniformity detection of silicon-based materials is poor. Summary of the Invention

[0004] Therefore, it is necessary to provide a method, apparatus, and computer-readable storage medium for detecting the uniformity of silicon-based materials, which improves the detection effect of uniformity detection of silicon-based materials, in order to address the above-mentioned technical problems.

[0005] In a first aspect, this application provides a method for detecting the uniformity of silicon-based materials, comprising:

[0006] The test luminescence brightness values ​​corresponding to multiple test areas of the silicon-based material under test are obtained during the photoluminescence test process, wherein the multiple test areas cover the entire surface area of ​​the silicon-based material under test;

[0007] Based on the first standard curve of the silicon-based material to be tested, each test luminous intensity value is converted into a test doping concentration. The first standard curve characterizes the correspondence between doping concentration and luminous intensity value. The first standard curve is constructed based on the standard luminous intensity value and standard doping concentration of the silicon-based material sample.

[0008] Based on the hierarchical relationship between multiple test doping concentrations and preset doping concentration ranges, the total number of qualified test areas with qualified doping concentrations in the multiple test areas is counted.

[0009] The uniformity of the silicon-based material to be tested is determined based on the total number of qualified test areas and the total number of test areas corresponding to multiple test areas.

[0010] In one embodiment, the test area includes a test image area; acquiring the test luminescence brightness values ​​corresponding to each of the multiple test areas of the silicon-based material under test during the photoluminescence test process includes:

[0011] The test image of the entire surface area of ​​the silicon-based material to be tested during the photoluminescence test is acquired, and the test image is divided into multiple test image regions.

[0012] Extract the pixel brightness values ​​of multiple test pixels located within each test image region;

[0013] The test luminous intensity value of each test image region is determined based on the brightness values ​​of multiple pixels in each test image region.

[0014] In one embodiment, determining the test luminance value of each test image region based on the luminance values ​​of multiple pixels in each test image region includes at least one of the following:

[0015] The pixel brightness value of a specified pixel within each test image region is used as the test luminous brightness value;

[0016] Based on the brightness values ​​of multiple pixels in each test image region, a pixel brightness feature value for each test image region is determined, and the pixel brightness feature value is used as the test luminous brightness value.

[0017] In one embodiment, the preset doping concentration range includes an upper limit value and a lower limit value for doping concentration; the step of calculating the total number of qualified test areas with acceptable doping concentrations among the multiple test areas based on the membership relationship between the multiple test doping concentrations and the preset doping concentration range includes:

[0018] Detection steps: Randomly select one of the multiple test doping concentrations as the target test doping concentration, detect the first relationship between the target test doping concentration and the lower limit of the doping concentration, and detect the second relationship between the target test doping concentration and the upper limit of the doping concentration;

[0019] If the target test doping concentration is detected to be greater than or equal to the lower limit of the doping concentration and less than or equal to the upper limit of the doping concentration, update the total number of preset qualified test areas.

[0020] Return to the detection steps until all multiple test doping concentrations have been selected as the target test doping concentration, and use the updated preset total number of qualified test areas as the total number of qualified test areas.

[0021] In one embodiment, the step of detecting the doping concentration of the silicon-based material to be tested based on the total number of qualified test areas and the total number of test areas corresponding to multiple test areas includes:

[0022] Obtain the axial doping concentration of the silicon-based material to be tested before slicing;

[0023] Determine the ratio of the total number of qualified test areas to the total number of test areas, and when the ratio of qualified test areas is greater than a preset qualified test area ratio threshold, obtain the radial doping concentration of the silicon-based material to be tested after slicing by fusing the test doping concentrations of the test areas;

[0024] The uniformity of the silicon-based material to be tested is determined based on the axial doping concentration and the radial doping concentration.

[0025] In one embodiment, the uniformity detection of the silicon-based material to be tested based on the axial doping concentration and the radial doping concentration includes:

[0026] Obtain the first weight corresponding to the axial doping concentration and the second weight corresponding to the radial doping concentration;

[0027] Uniformity evaluation parameters are generated based on the axial doping concentration, the radial doping concentration, the first weight, and the second weight;

[0028] The uniformity of the silicon-based material to be tested is determined based on the relationship between the uniformity evaluation parameters and the preset uniformity evaluation parameter threshold.

[0029] In one embodiment, before converting each test luminous intensity value into a test doping concentration according to a first standard curve of the silicon-based material to be tested, the uniformity detection method of the silicon-based material further includes:

[0030] Based on the second standard curve of the silicon-based material sample, the standard resistivity of at least one preset region of the silicon-based material sample is converted into the corresponding standard doping concentration, wherein the second standard curve characterizes the correspondence between doping concentration and resistivity;

[0031] Based on the correspondence between the standard doping concentration and the standard luminous intensity value of each preset region of the silicon-based material sample, a first standard curve is obtained by fitting.

[0032] In one embodiment, before fitting a first standard curve based on the correspondence between the standard doping concentration and the standard luminous intensity value of each preset region of the silicon-based material sample, the uniformity detection method for the silicon-based material further includes:

[0033] Extract multiple sampling points located in each preset region of the silicon-based material sample;

[0034] By fusing the sampled luminance values ​​from the multiple sampling locations, the standard luminance value for each preset region is obtained.

[0035] Secondly, this application also provides an apparatus for detecting the uniformity of silicon-based materials, comprising:

[0036] The acquisition module is used to acquire the test luminescence brightness values ​​corresponding to multiple test areas of the silicon-based material under test during the photoluminescence test process, wherein the multiple test areas cover the entire surface area of ​​the silicon-based material under test;

[0037] The conversion module is used to convert each test luminescence value into a test doping concentration according to the first standard curve of the silicon-based material to be tested. The first standard curve represents the correspondence between doping concentration and luminescence value. The first standard curve is constructed based on the standard luminescence value and standard doping concentration of the silicon-based material sample.

[0038] The statistics module is used to count the total number of qualified test areas with qualified doping concentrations in the multiple test areas based on the hierarchical relationship between multiple test doping concentrations and preset doping concentration ranges.

[0039] The detection module is used to perform uniformity detection on the silicon-based material to be tested based on the total number of qualified test areas and the total number of test areas corresponding to multiple test areas.

[0040] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0041] The process involves acquiring test luminescence values ​​for multiple test regions of the silicon-based material under test during photoluminescence testing, wherein the multiple test regions cover the entire surface area of ​​the silicon-based material under test. Based on a first standard curve of the silicon-based material under test, each test luminescence value is converted into a test doping concentration. The first standard curve characterizes the correspondence between doping concentration and luminescence value, and is constructed based on the standard luminescence value and standard doping concentration of the silicon-based material sample. Based on the membership relationship between multiple test doping concentrations and preset doping concentration ranges, the total number of qualified test regions with acceptable doping concentrations is calculated. Finally, based on the total number of qualified test regions and the total number of test regions corresponding to the multiple test regions, uniformity testing is performed on the silicon-based material under test.

[0042] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, performs the following steps:

[0043] The process involves acquiring test luminescence values ​​for multiple test regions of the silicon-based material under test during photoluminescence testing, wherein the multiple test regions cover the entire surface area of ​​the silicon-based material under test. Based on a first standard curve of the silicon-based material under test, each test luminescence value is converted into a test doping concentration. The first standard curve characterizes the correspondence between doping concentration and luminescence value, and is constructed based on the standard luminescence value and standard doping concentration of the silicon-based material sample. Based on the membership relationship between multiple test doping concentrations and preset doping concentration ranges, the total number of qualified test regions with acceptable doping concentrations is calculated. Finally, based on the total number of qualified test regions and the total number of test regions corresponding to the multiple test regions, uniformity testing is performed on the silicon-based material under test.

[0044] Fifthly, this application also provides a computer program product, including a computer program that, when executed by a processor, performs the following steps:

[0045] The process involves acquiring test luminescence values ​​for multiple test regions of the silicon-based material under test during photoluminescence testing, wherein the multiple test regions cover the entire surface area of ​​the silicon-based material under test. Based on a first standard curve of the silicon-based material under test, each test luminescence value is converted into a test doping concentration. The first standard curve characterizes the correspondence between doping concentration and luminescence value, and is constructed based on the standard luminescence value and standard doping concentration of the silicon-based material sample. Based on the membership relationship between multiple test doping concentrations and preset doping concentration ranges, the total number of qualified test regions with acceptable doping concentrations is calculated. Finally, based on the total number of qualified test regions and the total number of test regions corresponding to the multiple test regions, uniformity testing is performed on the silicon-based material under test.

[0046] The aforementioned method, apparatus, and computer-readable storage medium for uniformity detection of silicon-based materials first acquire, during photoluminescence testing, the test luminescence brightness values ​​corresponding to multiple test regions divided from the overall surface area of ​​the silicon-based material under test. Then, using a first standard curve characterizing the relationship between doping concentration and luminescence brightness values, each test luminescence brightness value is converted into a test doping concentration. The first standard curve can be constructed based on the standard luminescence brightness values ​​and standard doping concentrations of the silicon-based material sample. Next, based on the membership relationship between multiple test doping concentrations and preset doping concentration ranges, the total number of qualified test regions among the multiple test regions of the silicon-based material under test is calculated. Finally, relying on the total number of qualified test regions and the total number of test regions, uniformity detection is performed on the silicon-based material under test. Since multiple test luminescence brightness values ​​characterize the overall surface area of ​​the silicon-based material under test... The luminescence distribution is analyzed, and the first standard curve enables a linear conversion between luminescence value and doping concentration. This allows for the quantification of the doping concentration distribution across the entire surface region of the silicon-based material under test, ultimately enabling quantitative detection of the doping concentration. This allows for uniformity detection based on the overall doping concentration distribution of the silicon-based material, rather than relying solely on local doping concentration measurements using the four-probe method. Therefore, it overcomes the technical shortcomings of the four-probe method, which is a point-contact measurement method. This method is susceptible to interference from factors such as probe spacing, pressure, and measurement point location. Furthermore, the direct contact between the probe and the silicon-based material surface increases the risk of contamination, leading to low detection accuracy and efficiency. Thus, it improves the uniformity detection effect for silicon-based materials. Attached Figure Description

[0047] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0048] Figure 1 This is a schematic diagram of a four-probe measurement method for detecting the uniformity of silicon-based materials in one embodiment;

[0049] Figure 2 This is a flowchart illustrating a method for detecting the uniformity of silicon-based materials in one embodiment;

[0050] Figure 3 This is a flowchart illustrating a method for detecting the uniformity of silicon-based materials in another embodiment;

[0051] Figure 4 This is a schematic diagram illustrating the linear relationship between resistivity and luminous intensity values ​​in a method for detecting the uniformity of silicon-based materials in another embodiment.

[0052] Figure 5 This is a structural block diagram of a silicon-based material uniformity detection device in one embodiment;

[0053] Figure 6 This is an internal structural diagram of a computer device in one embodiment. Detailed Implementation

[0054] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0055] First, it should be understood that the uniformity of silicon-based materials mainly refers to the spatial consistency of parameters such as doping concentration, crystal structure, impurity distribution, and geometric dimensions. Insufficient uniformity can lead to discrepancies in the electrical properties of silicon-based materials. For example, excessively high or low doping concentrations in N-type single-crystal silicon can cause resistivity fluctuations, making semiconductor devices prone to short circuits or failures in integrated circuits. Furthermore, it can cause uncontrolled consistency issues in critical processes such as photolithography, etching, and ion implantation. Therefore, uniformity testing of silicon-based materials is essential. Taking doping concentration uniformity testing as an example, currently, a four-probe measurement method is commonly used, referring to… Figure 1 , Figure 1The diagram illustrates the four-probe measurement method. Four probes arranged in a straight line are pressed vertically onto the sample surface with a certain pressure. A constant current I is applied to the outer probes (1 and 4), and the potential difference is measured between the inner probes (2 and 3), forming a current loop and a voltage detection loop. Furthermore, based on Ohm's law and the potential distribution theory of a point current source in a semi-infinite homogeneous medium, the resistivity of the sample can be derived. However, because the four-probe method is a point-contact measurement, the measured doping concentration is easily affected by factors such as probe spacing, pressure, and measurement point location. Simultaneously, the direct contact between the probes and the silicon-based material surface increases the risk of contamination, leading to low detection accuracy and efficiency. Therefore, from a macroscopic perspective, there is an urgent need for a method to improve the uniformity detection of silicon-based materials.

[0056] In one embodiment, such as Figure 2 As shown, a method for detecting the uniformity of silicon-based materials is proposed. This embodiment uses a terminal as an example, including but not limited to personal computers, laptops, smartphones, and tablets. The terminal is equipped with a uniformity detection device for silicon-based materials. The device includes an acquisition module, a conversion module, a statistics module, and a detection module. The acquisition module acquires the test luminescence values ​​of multiple test areas of the silicon-based material under test during photoluminescence testing. The multiple test areas cover the entire surface area of ​​the silicon-based material under test. The conversion module converts each test luminescence value into a test doping concentration based on a first standard curve of the silicon-based material under test. The first standard curve represents the correspondence between doping concentration and luminescence value and is constructed based on the standard luminescence value and standard doping concentration of the silicon-based material sample. The statistics module calculates the total number of qualified test areas with acceptable doping concentrations based on the membership relationship between multiple test doping concentrations and preset doping concentration ranges. The detection module performs uniformity detection on the silicon-based material under test based on the total number of qualified test areas and the total number of test areas corresponding to the multiple test areas.

[0057] In the process of uniformity detection of silicon-based materials, the acquisition module, conversion module, statistics module, and detection module work together. Since multiple test luminance values ​​characterize the luminance distribution of the overall surface area of ​​the silicon-based material, and the first standard curve can achieve a linear conversion between luminance values ​​and doping concentration, the doping concentration distribution of the overall surface area of ​​the silicon-based material can be quantified. Finally, the doping concentration of the silicon-based material can be quantitatively detected, thus achieving uniformity detection based on the overall doping concentration distribution of the silicon-based material. That is, it can provide more accurate feedback on the uniformity of the silicon-based material with the doping concentration, rather than relying solely on the four-probe measurement method for localized doping concentration measurement. Therefore, it can improve the detection effect of uniformity detection for silicon-based materials. It is understood that this method can also be applied to servers, and also to systems including terminals and servers, and implemented through interaction between the terminal and server. In this embodiment, the method includes steps 202 to 208. Wherein:

[0058] Step 202: Obtain the test luminescence brightness values ​​of each of the multiple test areas of the silicon-based material to be tested during the photoluminescence test process, wherein the multiple test areas cover the entire surface area of ​​the silicon-based material to be tested.

[0059] It should be noted that the silicon-based semiconductor material to be tested, which is a material awaiting homogenization, can specifically be used as a substrate material for photovoltaic cells. It forms a PN junction through doping, thereby converting light energy into electrical energy. It can also be used to fabricate memory and logic chips, etc. In some feasible embodiments, the silicon-based material to be tested can specifically be an N-type monocrystalline silicon wafer, a P-type monocrystalline silicon wafer, or a polycrystalline silicon wafer, etc. Specifically, N-type monocrystalline silicon wafers are used as materials for high-efficiency cells such as TOPCon (Tunnel Oxide Passivated Contact), HJT (Heterojunction Technology), and IBC (Interdigitated Back Contact). P-type monocrystalline silicon wafers are used as the mainstream material for traditional PERC (Passivated Emitter and Rear Cell). The photoluminescence testing process is based on PL (Photoluminescence Photovoltaic Light). Photoluminescence is a technique that uses lasers or strong light to irradiate materials, exciting electron transitions within them. When the electrons return to the ground state, they release photons (light emission). By detecting the intensity and distribution of the light emission, the performance of silicon-based materials, such as defects, doping uniformity, and minority carrier lifetime, can be evaluated. It can be understood that through photoluminescence testing, physical quantities related to the light emission characteristics of silicon-based materials can be obtained.

[0060] It should be noted that the test area represents the detection unit divided on the surface of the silicon-based material to be tested based on the testing requirements. The number of test areas is equal to the number of detection units. Multiple test areas cover the entire surface area of ​​the silicon-based material to be tested. These test areas can be uniformly or randomly divided. For example, in one feasible approach, assuming the silicon-based material to be tested is a silicon wafer with a size of 120mm × 120mm divided into 12 × 12 grid areas (100 in total), each grid area can be represented as a test area. The photon intensity value detected in each test area during photoluminescence reflects the electronic transition activity and material uniformity of that area. For example, assuming the test luminescence brightness value of a certain test area A is 5000 counts, while the test luminescence brightness value of other test areas of the silicon-based material to be tested is 4500 counts, then... The test area A shows differences in doping concentration or defects. The photoluminescence test results can be presented in image or numerical form. Specifically, the photoluminescence test results can be the test luminescence brightness value, which is the luminescence intensity per unit area of ​​the silicon-based material under photoexcitation. It can be expressed as a relative value (e.g., grayscale value or count rate) or an absolute value. In some feasible embodiments, an optical fiber probe or a point detector can be used to focus on a specific position in each test area of ​​the silicon-based material to be tested, and directly output the luminescence intensity value, which is then used as the test luminescence brightness value of that area. In other feasible embodiments, an optical fiber probe or a point detector can also be used to focus on a specific position in each test area of ​​the silicon-based material to be tested, and directly output the spectral curve, and calculate the test luminescence brightness value of that area based on the spectral curve.

[0061] It should be noted that testers can either manually divide the entire surface area of ​​the silicon-based material under test into multiple test areas through human-computer interaction with the terminal software interface, or automatically divide the entire surface area of ​​the silicon-based material under test into multiple test areas based on the algorithm. In some feasible embodiments, the coordinate parameters of different test areas can be manually input in the terminal software to obtain multiple test areas. In other feasible embodiments, test images of the silicon-based material under test during the photoluminescence test process can be acquired through a PL camera, and then feature segmentation can be performed on the preprocessed test images. Finally, multiple test areas can be automatically generated based on the feature segmentation results. It is understood that the number and size of the test areas are not specifically limited in this embodiment.

[0062] As an example, step 202 includes: dividing the overall surface area of ​​the silicon-based material to be tested into multiple test areas of the silicon-based material to be tested during the photoluminescence test process; using fiber optic probes to collect luminescence intensity values ​​of multiple test areas respectively; and using the luminescence intensity values ​​of each test area as the corresponding test luminescence intensity values.

[0063] Step 204: Based on the first standard curve of the silicon-based material to be tested, convert each test luminous intensity value into a test doping concentration. The first standard curve characterizes the correspondence between doping concentration and luminous intensity value. The first standard curve is constructed based on the standard luminous intensity value and standard doping concentration of the silicon-based material sample.

[0064] It should be noted that in photoluminescence technology, there is a linear relationship between the measured luminous intensity value and the doping concentration, as shown in the following expression:

[0065]

[0066] in, Where B is the self-excited emissivity, and B is a constant. For the non-equilibrium majority carrier concentration increment, The background doping concentration; as can be seen from the above expression, due to the self-excited emissivity It is a key parameter for measurable light intensity in photoluminescence, and and background doping concentration The luminance value exhibits a linear product relationship, thus it can be directly proportional to the background doping concentration. Furthermore, the following expression is also disclosed in relevant literature:

[0067]

[0068] in, Where B is the photoluminescence intensity, and B is a constant. This represents the background doping concentration. This represents the non-equilibrium minority carrier concentration increment. This is the instrument constant; as shown above, the photoluminescence intensity of silicon-based materials... The photoluminescence intensity is directly proportional to the concentrations of majority and minority carriers, and can ultimately be derived from this. Still related to the background doping concentration The two values ​​exhibit a linear product relationship. In summary, there is a linear correlation between the tested luminous intensity value and the tested doping concentration. The amount of tested doping concentration will directly affect the resistivity of the silicon-based material under test. Therefore, the distribution of tested doping concentration can be obtained from the distribution of tested luminous intensity value.

[0069] It should be noted that, since the linear relationship between luminance and doping concentration exists objectively in silicon-based materials, the conversion from measured luminance to measured doping concentration can be achieved based on this linear relationship. Therefore, a mathematical mapping relationship between doping concentration and luminance can be established in advance to obtain a first standard curve. Specifically, a set of silicon-based materials can be selected as silicon-based material samples, where the doping concentration of the silicon-based material samples is known and within the expected detection range. Standard luminance values ​​of each silicon-based material sample are then collected. After calibrating the doping concentration of each silicon-based material sample, the first standard curve is finally constructed by fitting multiple sets of standard luminance values ​​and standard doping concentrations. After the first standard curve and the corresponding measured luminance values ​​for multiple test regions have been constructed, the measured luminance values ​​for each test region can be converted based on the first standard curve. For example, in one feasible approach, the expression of the first standard curve is assumed to be as follows:

[0070]

[0071] Where C is the doping concentration and L is the luminance value. Assuming the tested luminance value is 600 ADC, the tested doping concentration can be obtained as follows: It is understandable that the silicon-based material sample is a silicon-based material with a known doping concentration used to construct the first standard curve, the standard luminous intensity value is the measured luminous intensity value of the silicon-based material sample, and the standard doping concentration is the actual doping concentration value of the silicon-based material sample obtained through chemical analysis or physical measurement.

[0072] As an example, step 204 includes: mapping the test luminous intensity values ​​of multiple test regions to the corresponding test doping concentrations using a first standard curve of the silicon-based material to be tested.

[0073] Step 206: Based on the hierarchical relationship between multiple test doping concentrations and preset doping concentration ranges, count the total number of qualified test areas with qualified doping concentrations in multiple test areas.

[0074] It should be noted that, since the luminous intensity values ​​of each test area of ​​the silicon-based material under test are known, the uniformity of the silicon-based material under test can be quantitatively analyzed to determine the doping concentration compliance of each test area, thus providing a basis for quantitatively judging the doping uniformity of the silicon-based material under test. The preset doping concentration range represents the qualified range of doping concentration pre-set based on process requirements. Specifically, it can be the doping concentration at the target resistivity. Here, the target resistivity is the resistivity value that the silicon-based material under test should achieve based on the design requirements of the semiconductor device. The doping concentration at the target resistivity is then used as the preset doping concentration threshold. For example, assuming the preset doping concentration range is a specific value... ,Will The test area is compared with multiple test doping concentrations one by one. If the doping concentration exceeds the limit, the test area corresponding to the test doping concentration is deemed unqualified. It can be understood that if there are a total of 5 test areas and the doping concentration of 3 test areas is qualified, then the total number of qualified test areas is "3".

[0075] As an example, step 206 includes: determining the number of test doping concentrations that are less than a preset doping concentration threshold among multiple test doping concentrations, and using the number of test doping concentrations as the total number of qualified test areas with qualified doping concentrations among multiple test areas.

[0076] Step 208: Based on the total number of qualified test areas and the total number of test areas corresponding to multiple test areas, perform uniformity testing on the silicon-based material to be tested.

[0077] It should be noted that regions with acceptable doping concentrations can be defined as effective doped regions. The doping uniformity of the silicon-based material under test can then be quantitatively detected by the ratio between the total number of acceptable regions and the total number of test regions. The total number of acceptable regions represents the number of effective doped regions whose doping concentration meets the preset standard. The total number of test regions refers to the total number of all test regions, which can be specifically detected using the following expression:

[0078]

[0079] in, To achieve the effective doping region ratio, This represents the total number of qualified test areas. This represents the total number of test areas; it is understandable that this applies when the silicon-based material to be tested is a silicon wafer. This can characterize the radial uniformity of the doping concentration, which is something that traditional detection methods cannot do.

[0080] As an example, step 208 includes: determining the effective doped region ratio between the total number of qualified test regions and the total number of test regions corresponding to multiple test regions; if the effective doped region ratio is greater than a preset ratio threshold, determining that the doping concentration uniformity of the silicon-based material to be tested is qualified; if the effective doped region ratio is less than or equal to the preset ratio threshold, determining that the doping concentration uniformity of the silicon-based material to be tested is unqualified.

[0081] The aforementioned method for detecting the uniformity of silicon-based materials first acquires the test luminescence values ​​corresponding to multiple test regions, each derived from the overall surface area of ​​the silicon-based material under test, during photoluminescence testing. Then, using a first standard curve characterizing the relationship between doping concentration and luminescence value, each test luminescence value is converted into a test doping concentration. The first standard curve can be constructed based on the standard luminescence values ​​and standard doping concentrations of the silicon-based material sample. Next, based on the membership relationship between multiple test doping concentrations and a preset doping concentration range, the total number of qualified test regions among the multiple test regions of the silicon-based material under test is calculated. Finally, relying on the total number of qualified test regions and the total number of test regions, the uniformity of the silicon-based material under test is detected. Since multiple test luminescence values ​​characterize the luminescence distribution of the overall surface area of ​​the silicon-based material under test... Furthermore, the first standard curve can achieve a linear conversion between luminance value and doping concentration, thereby quantifying the doping concentration distribution of the entire surface area of ​​the silicon-based material to be tested. Finally, the doping concentration of the silicon-based material to be tested can be quantitatively detected. This allows for uniformity detection based on the overall doping concentration distribution of the silicon-based material to be tested, rather than relying solely on the four-probe measurement method for local doping concentration measurement. Therefore, it overcomes the technical defects of the four-probe measurement method, which is a point-contact measurement method, making the measured doping concentration susceptible to interference from factors such as probe spacing, pressure, and measurement point position. At the same time, the direct contact between the probe and the surface of the silicon-based material increases the risk of contamination, leading to low detection accuracy and efficiency. Thus, it improves the detection effect of uniformity detection for silicon-based materials.

[0082] In one embodiment, refer to Figure 3 The test area includes the test image area; the test luminescence brightness values ​​of multiple test areas of the silicon-based material under test are obtained during the photoluminescence test process, including:

[0083] Step 302: Acquire test images of the entire surface area of ​​the silicon-based material to be tested during the photoluminescence test, and divide the test images into multiple test image regions.

[0084] It should be noted that, since CCD imaging is used to capture dark signals in defect areas, it is possible to accurately identify hidden cracks, black edges, black centers, dislocations, and vortex defects. Furthermore, image detection technology can completely cover the entire surface of the silicon-based material to be tested, and the entire surface can be detected with a single shot. The test image is the photoluminescence image of the silicon-based material to be tested during the photoluminescence test. The division method can be uniform grid division or region of interest division, etc., and this embodiment does not make specific limitations on this.

[0085] As an example, step 302 includes: taking a picture of the entire surface area of ​​the silicon-based material to be tested during the photoluminescence test to obtain a test image, and dividing the test image into multiple test image regions based on a preset division rule.

[0086] Step 304: Extract the pixel brightness values ​​of multiple test pixels located in each test image region.

[0087] It should be noted that each test image region is composed of multiple test pixels, and the pixel brightness value of each pixel can be used to reflect the local characteristics of the physical location corresponding to the surface of the silicon-based material to be tested. Therefore, after traversing all pixels in each test image region, multiple pixel brightness values ​​can be randomly extracted from the pixel brightness matrix corresponding to each test image region as the pixel brightness values ​​of multiple test pixels.

[0088] As an example, step 304 includes: randomly extracting the pixel brightness values ​​of multiple test pixels from the pixel brightness matrix corresponding to each test image region.

[0089] Step 306: Determine the test luminous intensity value of each test image region based on the brightness values ​​of multiple pixels in each test image region.

[0090] It should be noted that since the test luminance value of each test image area is fed back by the luminance values ​​of multiple pixels that make up the test image area, the luminance value of each test image area can be determined by the luminance values ​​of multiple pixels. For example, a 100×100 pixel test image area contains 10,000 pixel luminance values: [175, 180, 178, ..., 182]. Then, 1,000 pixel luminance values ​​are randomly selected from the above 10,000 pixels and fused. The fused luminance value can be used as the test luminance value of the test image area.

[0091] As an example, step 306 includes averaging the brightness values ​​of multiple pixels in each test image region and using the averaging result of each test image region as the test luminous brightness value of each test image region.

[0092] In this embodiment, test images are first captured on the entire surface area of ​​the silicon-based material to be tested during the photoluminescence test. Then, multiple test areas are characterized by images, which completely avoids contact between the probe and the surface of the silicon-based material to be tested. Furthermore, the entire sample surface can be covered by a single image acquisition, which simplifies the steps of area division and batch calculation process. After extracting the pixel brightness values ​​of multiple test pixels in each test image area, the test luminescence brightness values ​​corresponding to each of the multiple test image areas can be efficiently determined based on the multiple pixel brightness values ​​of each test image area. Therefore, the detection effect of uniformity detection of silicon-based materials can be further improved from multiple dimensions such as detection efficiency and detection accuracy.

[0093] In one embodiment, the test luminance value of each test image region is determined based on the luminance values ​​of multiple pixels in each test image region, including at least one of the following:

[0094] The pixel brightness value of a specified pixel within each test image area is used as the test luminous brightness value;

[0095] Based on the brightness values ​​of multiple pixels in each test image region, the pixel brightness feature value of each test image region is determined, and the pixel brightness feature value is used as the test luminous brightness value.

[0096] It should be noted that the requirements for detection accuracy and efficiency of doping concentration uniformity detection vary for different silicon-based materials to be tested, thus different processing methods can be provided to determine the test luminance value of each test image region. Specifying a pixel represents a pixel at a specific location pre-defined based on detection requirements, specifically a region center pixel, edge pixel, or extreme pixel. In some feasible embodiments, the luminance value of the region center pixel is directly used as the test luminance value of the corresponding test image region, thereby simplifying the pixel extraction process within the image region. Pixel luminance feature values ​​represent an index obtained by aggregating the luminance values ​​of all pixels within the test image region, used to characterize the overall luminance characteristics of the test image region, specifically the pixel luminance average, pixel luminance standard deviation, or pixel luminance variance, etc., thereby ensuring the accuracy of the test luminance value through further calculations.

[0097] As an example, the pixel brightness value of the center pixel in each test image region is used as the test luminous brightness value; by fusing multiple pixel brightness values ​​in each test image region, the average pixel brightness value of each test image region is obtained, and the average pixel brightness value of each test image region is used as the test luminous brightness value.

[0098] In this embodiment, different methods for obtaining the test luminance value of the test image area can be set based on the different types of silicon-based materials to be detected. Thus, the test luminance value of each test image area of ​​the silicon-based material to be detected can be quickly obtained from a macroscopic level by specifying the pixel point method, and the test luminance value of each test image area of ​​the silicon-based material to be detected can be accurately captured from a microscopic level by using the eigenvalue method. Therefore, while improving the detection effect of uniformity detection of silicon-based materials, the detection flexibility of uniformity detection of silicon-based materials is also improved.

[0099] In one embodiment, the preset doping concentration range includes an upper limit and a lower limit of doping concentration; based on the hierarchical relationship between multiple test doping concentrations and the preset doping concentration range, the total number of qualified test regions with acceptable doping concentrations across multiple test regions is counted, including:

[0100] Detection steps: Randomly select one test doping concentration from multiple test doping concentrations as the target test doping concentration; detect the first relationship between the target test doping concentration and the lower limit of the doping concentration, and detect the second relationship between the target test doping concentration and the upper limit of the doping concentration; If the target test doping concentration is greater than or equal to the lower limit of the doping concentration and less than or equal to the upper limit of the doping concentration, update the preset total number of qualified test areas; return to execute the detection steps until the target test doping concentration is selected from multiple test doping concentrations, and use the updated preset total number of qualified test areas as the total number of qualified test areas.

[0101] It should be noted that in silicon-based materials, on the one hand, there may be slight differences between different batches of silicon-based materials, which may lead to fluctuations in the actual concentration of the same doping process on different materials. On the other hand, the doping process of impurity atoms is easily affected by factors such as temperature, time, and gas flow rate, which can also cause fluctuations in doping concentration. Considering practical application requirements, if the detection standard is set to a doping concentration range that includes an upper and lower limit of the doping concentration, it can avoid the situation where a large number of qualified areas are misjudged as unqualified due to slight process fluctuations. For example, in one feasible approach, assuming the target doping concentration is... The test doping concentration in a certain area is Although the value is slightly lower than the target value, the electrical properties of the silicon-based material being tested are still within the acceptable range. If judged according to a single threshold, this area would easily be judged as an unacceptable area.

[0102] It should be noted that the preset doping concentration range can be a pre-defined acceptable range of doping concentration, including the upper limit and lower limit of doping concentration. For each converted test doping concentration, it must be compared with the upper limit and lower limit of doping concentration. Only the test area corresponding to the doping concentration within the range of the lower limit to the upper limit of doping concentration can be considered as the acceptable test area, and only then can the update of the preset total number of acceptable test areas be triggered.

[0103] As an example, the detection steps are as follows: Randomly select one test doping concentration from multiple test doping concentrations as the target test doping concentration; detect the first relationship between the target test doping concentration and the lower limit of the doping concentration, and detect the second relationship between the target test doping concentration and the upper limit of the doping concentration; if the target test doping concentration is detected to be greater than or equal to the lower limit of the doping concentration and less than or equal to the upper limit of the doping concentration, update the preset total number of qualified test areas; return to the detection steps until all multiple test doping concentrations have been selected as the target test doping concentration, and use the updated preset total number of qualified test areas as the total number of qualified test areas.

[0104] In one feasible approach, if the target test doping concentration is detected to be less than the lower limit of the doping concentration or greater than the upper limit of the doping concentration, the preset total number of qualified test areas is not updated, and the test procedure is returned to be executed.

[0105] In this embodiment, by setting a preset doping concentration range that includes an upper limit and a lower limit for doping concentration, normal process fluctuations can be accommodated, thereby reducing misjudgments of qualified test areas. Therefore, the detection accuracy of uniformity detection of silicon-based materials can be further improved.

[0106] In one feasible approach, the doping concentration of the silicon-based material to be tested is determined based on the total number of qualified test areas and the total number of test areas corresponding to multiple test areas, including:

[0107] Obtain the axial doping concentration of the silicon-based material to be tested before slicing; determine the ratio of the total number of qualified test areas to the total number of test areas, and, if the ratio of qualified test areas is greater than a preset qualified test area ratio threshold, obtain the radial doping concentration of the silicon-based material to be tested after slicing by fusing the test doping concentrations of the test areas; and perform uniformity testing on the silicon-based material to be tested based on the axial doping concentration and the radial doping concentration.

[0108] It should be noted that the silicon-based material to be tested will exhibit different forms at different stages of the manufacturing process. Before slicing, the silicon-based material to be tested can be in its original form or an intermediate form. For example, before slicing, the silicon-based material to be tested can be a silicon block or silicon ingot, and the specific quantity is not limited. Specifically, a silicon block can be understood as a round single crystal silicon produced by the Czochralski method or the zone melting method. The diameter of the silicon block can be 200~300mm and the length can be 1~2 meters. As another example, before slicing, the silicon-based material to be tested can be a silicon rod. Specifically, it is an intermediate form of the silicon block after pre-processing processes such as cutting and grinding. After slicing, the silicon-based material to be tested can be called a silicon wafer to be tested. The silicon wafer to be tested can be understood as a thin sheet made of silicon rod through slicing and polishing processes, and its thickness is usually [missing information]. It is understandable that, due to the differences in morphology and doping characteristics of the same silicon-based material under test at different process stages, the dimension of its doping concentration will be adjusted with the process stage. Specifically, in the crystal growth stage of the silicon-based material under test, the axial uniformity is mainly considered; in the pretreatment stage of the silicon-based material under test, both axial and longitudinal uniformity are considered; and in the silicon wafer stage of the silicon-based material under test, the radial uniformity is mainly considered.

[0109] It should be noted that, in order to achieve the detection of doping concentration uniformity of the silicon-based material under test from silicon rod to silicon wafer, the doping concentration can be detected separately when the silicon-based material under test is in different states, and the doping concentration uniformity can be obtained by finally integrating them. The axial doping concentration can be measured by traditional techniques, such as secondary ion mass spectrometry or surface photovoltage. The radial doping concentration is obtained by fusing the doping concentration of all test areas through a preset algorithm, provided that the proportion of qualified areas meets the standard, to obtain the radial concentration distribution in the silicon wafer plane. Finally, the uniformity of the silicon-based material under test is detected by combining the axial doping concentration and the radial doping concentration. Specifically, in the axial dimension, it is analyzed whether the concentration fluctuation in the axial direction is within the allowable range (e.g., whether the concentration difference between the top and bottom of the silicon rod is less than 10%). In the radial dimension, it is analyzed whether the concentration difference between the center and the edge of the silicon wafer cross-section meets the requirements (e.g., whether the radial concentration gradient is ≤5%). Finally, if the axial and radial concentration fluctuations are small, the material uniformity is judged to be good. If the fluctuation in one dimension exceeds the limit, the uniformity is judged to be unqualified.

[0110] As an example, a four-probe testing method is used to test the axial doping concentration of the silicon-based material under test before slicing; the ratio of the total number of qualified test areas to the total number of test areas is determined; and when the ratio of qualified test areas is greater than a preset qualified test area ratio threshold, the average value of the tested doping concentration of the silicon-based material under test after slicing is calculated based on the tested doping concentration of each test area, and the average value of the tested doping concentration is used as the radial doping concentration; and the uniformity of the silicon-based material under test is tested according to the first relationship between the axial doping concentration and the preset axial doping concentration threshold, and the second relationship between the radial doping concentration and the preset radial doping concentration threshold.

[0111] In this embodiment, since the axial doping concentration corresponds to axial detection, it reflects the longitudinal uniformity of the silicon-based material under test during the growth stage, and the radial doping concentration corresponds to radial detection, it reflects the uniformity of the cross-section of the silicon-based material under test after slicing. Therefore, by combining the two, the detection of silicon-based materials can be covered throughout the entire process chain from rod to sheet. This allows for the detection of doping concentration uniformity of silicon-based materials of different shapes, while analyzing the doping concentration uniformity from multiple dimensions. Thus, while improving the detection effect of uniformity detection of silicon-based materials, the reliability of uniformity detection of silicon-based materials is also improved.

[0112] In one embodiment, uniformity detection of the silicon-based material to be tested is performed based on axial doping concentration and radial doping concentration, including:

[0113] Obtain the first weight corresponding to the axial doping concentration and the second weight corresponding to the radial doping concentration; generate uniformity evaluation parameters based on the axial doping concentration, radial doping concentration, first weight, and second weight; and perform uniformity detection on the silicon-based material to be tested based on the relationship between the uniformity evaluation parameters and the preset uniformity evaluation parameter threshold.

[0114] It should be noted that the importance ratios of axial and longitudinal doping concentrations in the doping concentration uniformity detection process differ for different types of silicon-based materials under test. For example, silicon rods have higher requirements for axial uniformity, so the first weight corresponding to their axial doping concentration can be set to 70%, while the second weight corresponding to the longitudinal doping concentration after subsequent slicing is 30%. As another example, if silicon wafers need to focus on controlling the concentration difference between the edge and the center, the second weight can be set to 0.6, that is, the second weight corresponding to the radial doping concentration accounts for 60%, and the first weight corresponding to the axial doping concentration accounts for 40%. In addition to qualitatively evaluating the doping concentration uniformity of the silicon-based material under test, the doping concentration uniformity can also be quantitatively evaluated through uniformity evaluation parameters, which are used to quantify the doping uniformity of silicon-based materials.

[0115] As an example, based on the axial doping concentration, the corresponding first weight is retrieved, and based on the radial doping concentration, the corresponding second weight is retrieved. The axial doping concentration, radial doping concentration, first weight, and second weight are all input into the calculation expression for the uniformity evaluation parameter, thus calculating the uniformity evaluation parameter. If the uniformity evaluation parameter is greater than a preset threshold, the uniformity of the silicon-based material under test is determined to be qualified; if the uniformity evaluation parameter is less than or equal to the preset threshold, the uniformity of the silicon-based material under test is determined to be unqualified. In this way, through weight allocation and quantitative evaluation, dynamic and multi-dimensional detection of the doping uniformity of silicon-based materials can be achieved, meeting the specific needs of different process stages while improving detection efficiency and reliability through standardized procedures.

[0116] In one feasible approach, the formula for calculating the uniformity evaluation parameters is as follows:

[0117]

[0118] in, For uniformity evaluation parameters, As the first weight, As the second weight, For axial doping concentration, This represents the radial doping concentration.

[0119] In one embodiment, before converting each test luminous intensity value into a test doping concentration according to a first standard curve of the silicon-based material to be tested, the uniformity detection method for the silicon-based material further includes:

[0120] Based on the second standard curve of the silicon-based material sample, the standard resistivity of at least one preset region of the silicon-based material sample is converted into the corresponding standard doping concentration, wherein the second standard curve characterizes the correspondence between doping concentration and resistivity; based on the correspondence between the standard doping concentration and the standard luminous intensity value of each preset region of the silicon-based material sample, the first standard curve is obtained by fitting.

[0121] It should be noted that, in constructing the first standard curve, considering the linear relationship between resistivity and doping concentration and luminance value, resistivity can be used as an intermediate value for fitting. Specifically, the standard resistivity and standard doping concentration can first be converted using the fitted second standard curve. The expression for the second standard curve is as follows:

[0122]

[0123] in, Standard resistivity, Where q is the standard doping concentration and q is the charge amount. Let be the electron mobility. As shown above, since both charge and electron mobility are known quantities, the conversion between standard resistivity and standard doping concentration can be achieved. Then, based on the standard luminance value, the first standard curve is obtained by fitting using the least squares method. The expression for the first standard curve is as follows:

[0124]

[0125] in, Here, k is the standard luminous intensity value, d is the slope, and d is the intercept. The standard doping concentration is given. Based on this, since the slope and intercept are known quantities, the first standard curve can be obtained, which can be used to convert the test doping concentration and the test luminous intensity value in the subsequent uniformity detection process.

[0126] As an example, by using a second standard curve for a silicon-based material sample, the standard resistivity of at least one preset region of the sample is mapped to the corresponding standard doping concentration. Based on the correspondence between the standard doping concentration and the standard luminance value of each preset region of the silicon-based material sample, a first standard curve is obtained using the least squares method. Thus, during the uniformity detection of the silicon-based material to be tested, after obtaining the test luminance values ​​of multiple test regions, the test doping concentration of each test region can be obtained using the first standard curve. Therefore, this lays the foundation for improving the detection effect of uniformity detection for silicon-based materials.

[0127] In one embodiment, before fitting a first standard curve based on the correspondence between the standard doping concentration and the standard luminous intensity value of each preset region of the silicon-based material sample, the uniformity detection method for silicon-based materials further includes:

[0128] Multiple sampling points are extracted from each preset region of the silicon-based material sample; the standard luminous intensity value of each preset region is obtained by fusing the luminous intensity values ​​of the multiple sampling points.

[0129] It should be noted that the fitting accuracy of the first standard curve directly affects the detection accuracy of the uniformity of the silicon-based material to be tested. Therefore, when capturing the mapping relationship between the standard doping concentration and the standard luminous intensity value of each preset region of the silicon-based material sample, it is necessary to ensure that the standard luminous intensity value can accurately characterize the luminous characteristics of the corresponding preset region. Therefore, the standard luminous intensity value of each preset region can be obtained by fusing multiple sampling points. In some feasible embodiments, assuming that the preset region is the annular region of the silicon wafer to be tested, and the brightness values ​​of the 8 sampling points in the annular region are 240, 242, 245, 243, 241, 244, 243, and 242 respectively, the standard brightness value is obtained by weighted averaging, which is 242.5.

[0130] As an example, based on the geometric features of each preset region of a silicon-based material sample, sampling points are extracted in each preset region. The luminous intensity values ​​of multiple sampling points are then averaged, and the averaged result is used as the standard luminous intensity value for each preset region. In this way, through multi-point sampling and fusion, single-point measurement errors caused by factors such as material surface defects and testing equipment noise can be reduced, thereby improving the fitting accuracy of the first standard curve. Therefore, this further lays the foundation for improving the detection accuracy of uniformity testing of silicon-based materials.

[0131] In one feasible approach, refer to Figure 4 , Figure 4 This is a schematic diagram illustrating the linear relationship between resistivity and luminous intensity. Figure 4 It can be seen that the PL brightness increases as resistivity decreases. Assuming the silicon-based material to be tested is a crystal rod, silicon blocks from the head, middle, and tail of a crystal rod are selected as samples. The resistivity and PL brightness (average brightness) are measured, and then a second standard curve is fitted. Based on the linear relationship between resistivity and doping concentration, a first standard curve is further fitted. In the process of uniformity detection of silicon-based materials, test images of the entire surface area of ​​the silicon-based material to be tested during photoluminescence testing are first acquired, and the test images are divided into multiple test image regions. The pixel brightness values ​​of multiple test pixels located in each test image region are extracted. Then, based on the requirements, the pixel brightness values ​​of specified pixels in each test image region are used as the test luminescence brightness values. Alternatively, the pixel brightness feature values ​​of each test image region are determined based on the multiple pixel brightness values ​​of each test image region, and the pixel brightness feature values ​​are used as the test luminescence brightness values.

[0132] Furthermore, based on the established first standard curve, each test luminance value is converted into a test doping concentration, and a detection step is performed: A test doping concentration is randomly selected from multiple test doping concentrations as the target test doping concentration; the first relationship between the target test doping concentration and the lower limit of the doping concentration is detected, as well as the second relationship between the target test doping concentration and the upper limit of the doping concentration is detected; if the target test doping concentration is detected to be greater than or equal to the lower limit of the doping concentration and less than or equal to the upper limit of the doping concentration, the total number of preset qualified test areas is updated; the detection step is repeated until all multiple test doping concentrations have been selected as the target test doping concentration, and the updated total number of preset qualified test areas is taken as the total number of qualified test areas. Finally, based on the total number of qualified test areas and the total number of test areas corresponding to multiple test areas, the uniformity detection of the silicon-based material under test is completed.

[0133] Since multiple test luminance values ​​characterize the luminance distribution of the entire surface area of ​​the silicon-based material under test, and the first standard curve can achieve a linear conversion between luminance values ​​and doping concentration, the doping concentration distribution of the entire surface area of ​​the silicon-based material under test can be quantified. This allows for quantitative detection of the doping concentration of the silicon-based material under test, enabling uniformity detection based on the overall doping concentration distribution of the silicon-based material, rather than relying solely on local doping concentration measurements using the four-probe method. Therefore, this overcomes the technical shortcomings of the four-probe method, which is a point-contact measurement method, making the measured doping concentration susceptible to interference from factors such as probe spacing, pressure, and measurement point location. Furthermore, the direct contact between the probe and the silicon-based material surface increases the risk of contamination, leading to low detection accuracy and efficiency. Thus, this method improves the uniformity detection effect for silicon-based materials.

[0134] It should be understood that although the steps in the flowcharts of the above embodiments are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the above embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0135] Based on the same inventive concept, this application also provides a silicon-based material uniformity detection device for implementing the silicon-based material uniformity detection method described above. The solution provided by this device is similar to the solution described in the above method; therefore, the specific limitations of one or more silicon-based material uniformity detection device embodiments provided below can be found in the limitations of the silicon-based material uniformity detection method described above, and will not be repeated here.

[0136] In one exemplary embodiment, such as Figure 5 As shown, a uniformity detection device for silicon-based materials is provided, comprising: an acquisition module 501, a conversion module 502, a statistical module 503, and a detection module 504, wherein:

[0137] The acquisition module 501 is used to acquire the test luminescence brightness values ​​of multiple test areas of the silicon-based material to be tested during the photoluminescence test process, wherein the multiple test areas cover the entire surface area of ​​the silicon-based material to be tested.

[0138] The conversion module 502 is used to convert each test luminous intensity value into a test doping concentration according to the first standard curve of the silicon-based material to be tested. The first standard curve characterizes the correspondence between doping concentration and luminous intensity value. The first standard curve is constructed based on the standard luminous intensity value and standard doping concentration of the silicon-based material sample.

[0139] The statistics module 503 is used to count the total number of qualified test areas with qualified doping concentrations in multiple test areas based on the hierarchical relationship between multiple test doping concentrations and preset doping concentration ranges.

[0140] The detection module 504 is used to perform uniformity detection on the silicon-based material to be tested based on the total number of qualified test areas and the total number of test areas corresponding to multiple test areas.

[0141] In one embodiment, the test area includes a test image area; the acquisition module 501 is further configured to:

[0142] The test images of the entire surface area of ​​the silicon-based material to be tested during the photoluminescence test are collected and divided into multiple test image regions. The pixel brightness values ​​of multiple test pixels located in each test image region are extracted. Based on the pixel brightness values ​​of multiple test pixels in each test image region, the test luminous brightness value of each test image region is determined.

[0143] In one embodiment, the acquisition module 501 is further configured to:

[0144] The pixel brightness value of a specified pixel in each test image region is used as the test luminous brightness value; based on the multiple pixel brightness values ​​of each test image region, the pixel brightness feature value of each test image region is determined, and the pixel brightness feature value is used as the test luminous brightness value.

[0145] In one embodiment, the preset doping concentration range includes an upper limit value and a lower limit value for the doping concentration; the statistics module 503 is further used for:

[0146] Detection steps: Randomly select one test doping concentration from multiple test doping concentrations as the target test doping concentration; detect the first relationship between the target test doping concentration and the lower limit of the doping concentration, and detect the second relationship between the target test doping concentration and the upper limit of the doping concentration; If the target test doping concentration is greater than or equal to the lower limit of the doping concentration and less than or equal to the upper limit of the doping concentration, update the preset total number of qualified test areas; return to execute the detection steps until the target test doping concentration is selected from multiple test doping concentrations, and use the updated preset total number of qualified test areas as the total number of qualified test areas.

[0147] In one embodiment, the detection module 504 is further configured to:

[0148] Obtain the axial doping concentration of the silicon-based material to be tested before slicing; determine the ratio of the total number of qualified test areas to the total number of test areas, and, if the ratio of qualified test areas is greater than a preset qualified test area ratio threshold, obtain the radial doping concentration of the silicon-based material to be tested after slicing by fusing the test doping concentrations of the test areas; and perform uniformity testing on the silicon-based material to be tested based on the axial doping concentration and the radial doping concentration.

[0149] In one embodiment, the detection module 504 is further configured to:

[0150] Obtain the first weight corresponding to the axial doping concentration and the second weight corresponding to the radial doping concentration; generate uniformity evaluation parameters based on the axial doping concentration, radial doping concentration, first weight, and second weight; and perform uniformity detection on the silicon-based material to be tested based on the relationship between the uniformity evaluation parameters and the preset uniformity evaluation parameter threshold.

[0151] In one embodiment, the uniformity detection device for silicon-based materials is further used for:

[0152] Based on the second standard curve of the silicon-based material sample, the standard resistivity of at least one preset region of the silicon-based material sample is converted into the corresponding standard doping concentration, wherein the second standard curve characterizes the correspondence between doping concentration and resistivity; based on the correspondence between the standard doping concentration and the standard luminous intensity value of each preset region of the silicon-based material sample, the first standard curve is obtained by fitting.

[0153] In one embodiment, the uniformity detection device for silicon-based materials is further used for:

[0154] Multiple sampling points are extracted from each preset region of the silicon-based material sample; the standard luminous intensity value of each preset region is obtained by fusing the luminous intensity values ​​of the multiple sampling points.

[0155] Each module in the aforementioned silicon-based material uniformity detection device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in the processor of a computer device in hardware form or independent of it, or stored in the memory of a computer device in software form, so that the processor can call and execute the corresponding operations of each module.

[0156] In one exemplary embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 6As shown. The computer device includes a processor, memory, input / output interface, communication interface, display unit, and input device. The processor, memory, and input / output interface are connected via a system bus, and the communication interface, display unit, and input device are also connected to the system bus via the input / output interface. The processor provides computing and control capabilities. The memory includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The input / output interface is used for exchanging information between the processor and external devices. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, NFC (Near Field Communication), or other technologies. When the computer program is executed by the processor, it implements a method for detecting the uniformity of silicon-based materials. Those skilled in the art will understand that... Figure 6 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0157] In one embodiment, a computer device is also provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps in the above method embodiments.

[0158] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon that, when executed by a processor, implements the steps in the above method embodiments.

[0159] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, implements the steps in the above method embodiments.

[0160] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0161] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0162] The above embodiments are merely illustrative of several implementation methods of this application, and their descriptions are relatively specific and detailed. However, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for detecting the uniformity of silicon-based materials, characterized in that, The method for detecting the uniformity of the silicon-based material includes: The test luminescence brightness values ​​corresponding to multiple test areas of the silicon-based material under test are obtained during the photoluminescence test process, wherein the multiple test areas cover the entire surface area of ​​the silicon-based material under test; Based on the second standard curve of the silicon-based material sample, the standard resistivity of at least one preset region of the silicon-based material sample is converted into the corresponding standard doping concentration, wherein the second standard curve characterizes the correspondence between doping concentration and resistivity; Based on the correspondence between the standard doping concentration and the standard luminous intensity value of each preset region of the silicon-based material sample, a first standard curve is obtained by fitting. Based on the first standard curve of the silicon-based material to be tested, each test luminous intensity value is converted into a test doping concentration. The first standard curve characterizes the correspondence between doping concentration and luminous intensity value. The first standard curve is constructed based on the standard luminous intensity value and standard doping concentration of the silicon-based material sample. Based on the membership relationship between multiple test doping concentrations and a preset doping concentration range, the total number of qualified test areas with acceptable doping concentrations among the multiple test areas is counted; the preset doping concentration range includes an upper limit and a lower limit of doping concentration. The uniformity of the silicon-based material to be tested is determined based on the total number of qualified test areas and the total number of test areas corresponding to multiple test areas.

2. The method for detecting the uniformity of silicon-based materials according to claim 1, characterized in that, The test area includes a test image area; acquiring the test luminescence brightness values ​​corresponding to each of the multiple test areas of the silicon-based material under test during the photoluminescence test process includes: The test image of the entire surface area of ​​the silicon-based material to be tested during the photoluminescence test is acquired, and the test image is divided into multiple test image regions. Extract the pixel brightness values ​​of multiple test pixels located within each test image region; The test luminous intensity value of each test image region is determined based on the brightness values ​​of multiple pixels in each test image region.

3. The method for detecting the uniformity of silicon-based materials according to claim 2, characterized in that, The determination of the test luminance value of each test image region based on the brightness values ​​of multiple pixels in each test image region includes at least one of the following: The pixel brightness value of a specified pixel within each test image region is used as the test luminous brightness value; Based on the brightness values ​​of multiple pixels in each test image region, a pixel brightness feature value for each test image region is determined, and the pixel brightness feature value is used as the test luminous brightness value.

4. The method according to claim 1, characterized in that, The step of calculating the total number of qualified test regions with acceptable doping concentrations based on the hierarchical relationship between multiple test doping concentrations and preset doping concentration ranges includes: Detection steps: Randomly select one of the multiple test doping concentrations as the target test doping concentration, detect the first relationship between the target test doping concentration and the lower limit of the doping concentration, and detect the second relationship between the target test doping concentration and the upper limit of the doping concentration; If the target test doping concentration is detected to be greater than or equal to the lower limit of the doping concentration and less than or equal to the upper limit of the doping concentration, update the total number of preset qualified test areas. Return to the detection steps until all multiple test doping concentrations have been selected as the target test doping concentration, and use the updated preset total number of qualified test areas as the total number of qualified test areas.

5. The method for detecting the uniformity of silicon-based materials according to claim 1, characterized in that, The step of detecting the doping concentration of the silicon-based material to be tested based on the total number of qualified test areas and the total number of test areas corresponding to multiple test areas includes: Obtain the axial doping concentration of the silicon-based material to be tested before slicing; Determine the ratio of the total number of qualified test areas to the total number of test areas, and when the ratio of qualified test areas is greater than a preset qualified test area ratio threshold, obtain the radial doping concentration of the silicon-based material to be tested after slicing by fusing the test doping concentrations of the test areas; The uniformity of the silicon-based material to be tested is determined based on the axial doping concentration and the radial doping concentration.

6. The method for detecting the uniformity of silicon-based materials according to claim 5, characterized in that, The process of uniformity detection of the silicon-based material under test based on the axial doping concentration and the radial doping concentration includes: Obtain the first weight corresponding to the axial doping concentration and the second weight corresponding to the radial doping concentration; Uniformity evaluation parameters are generated based on the axial doping concentration, the radial doping concentration, the first weight, and the second weight; The uniformity of the silicon-based material to be tested is determined based on the relationship between the uniformity evaluation parameters and the preset uniformity evaluation parameter threshold.

7. The method for detecting the uniformity of silicon-based materials according to claim 1, characterized in that, Before fitting the first standard curve based on the correspondence between the standard doping concentration and the standard luminous intensity value of each preset region of the silicon-based material sample, the uniformity detection method for the silicon-based material further includes: Extract multiple sampling points located in each preset region of the silicon-based material sample; By fusing the sampled luminance values ​​from the multiple sampling locations, the standard luminance value for each preset region is obtained.

8. A device for detecting the uniformity of silicon-based materials, characterized in that, The uniformity detection device for the silicon-based material includes: The acquisition module is used to acquire the test luminescence brightness values ​​corresponding to multiple test areas of the silicon-based material under test during the photoluminescence test process, wherein the multiple test areas cover the entire surface area of ​​the silicon-based material under test; The conversion module is used to convert the standard resistivity of at least one preset region of the silicon-based material sample into a corresponding standard doping concentration based on the second standard curve of the silicon-based material sample, wherein the second standard curve characterizes the correspondence between doping concentration and resistivity; Based on the correspondence between the standard doping concentration and the standard luminous intensity value of each preset region of the silicon-based material sample, a first standard curve is fitted to obtain the first standard curve; based on the first standard curve of the silicon-based material to be tested, each test luminous intensity value is converted into a test doping concentration, wherein the first standard curve characterizes the correspondence between the doping concentration and the luminous intensity value, and the first standard curve is constructed based on the standard luminous intensity value and the standard doping concentration of the silicon-based material sample; The statistics module is used to count the total number of qualified test areas with acceptable doping concentrations in the multiple test areas based on the membership relationship between multiple test doping concentrations and a preset doping concentration range; the preset doping concentration range includes an upper limit value and a lower limit value of the doping concentration. The detection module is used to perform uniformity detection on the silicon-based material to be tested based on the total number of qualified test areas and the total number of test areas corresponding to multiple test areas.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the steps of the uniformity detection method for silicon-based materials according to any one of claims 1 to 7.

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