Perovskite cell, preparation method thereof, photovoltaic module, photovoltaic system, power utilization device and power generation device

Abstract

The application relates to a perovskite battery and a preparation method thereof, a photovoltaic module, a photovoltaic system, a power utilization device and a power generation device. The perovskite battery comprises a first electrode layer, a hole transport layer, a perovskite layer and a second electrode layer. The hole transport layer is arranged on one side of the first electrode layer, and the hole transport layer comprises nickel oxide and a reducing cation. The perovskite layer is arranged on the side, away from the first electrode layer, of the hole transport layer. The second electrode layer is arranged on the side, away from the hole transport layer, of the perovskite layer. The perovskite battery has good long-term stability of the perovskite layer, and has a long service life.

Description

Technical Field

[0001] This application relates to the field of solar cells, specifically to a perovskite solar cell and its preparation method, photovoltaic modules, photovoltaic systems, electrical devices, and power generation devices. Background Technology

[0002] With the rapid development of the new energy field, solar cells have been widely used in aerospace, industry, commerce, agriculture, and communications. Perovskite solar cells are devices that convert solar energy into electrical energy using the photoelectric conversion mechanism of perovskite crystal materials. They are currently the third generation of solar cells and have many advantages such as high photoelectric conversion efficiency, simple manufacturing process, and low production cost, and have been extensively studied in recent years.

[0003] However, existing perovskite solar cells typically suffer from poor long-term stability of the perovskite layer, resulting in short battery life and severely hindering their industrial application. Therefore, improving the long-term stability of the perovskite layer and extending battery life has become a crucial research direction in this field. Summary of the Invention

[0004] This application is made in view of the above-mentioned problems, and one of its objectives is to provide a perovskite solar cell in which the long-term stability of the perovskite layer is good and the perovskite solar cell has a long lifespan.

[0005] To achieve the above objectives, the first aspect of this application provides a perovskite solar cell, comprising:

[0006] First electrode layer;

[0007] A hole transport layer is disposed on one side of the first electrode layer, and the hole transport layer includes nickel oxide and reducing cations;

[0008] A perovskite layer is disposed on the side of the hole transport layer opposite to the first electrode layer; and

[0009] The second electrode layer is disposed on the side of the perovskite layer opposite to the hole transport layer.

[0010] In the perovskite battery described above in this application, the reducing cation refers to a cation capable of losing electrons in a chemical reaction. Preferably, the reducing cation in this invention is a reducing cation capable of reducing high-valence nickel ions, wherein the valence of the high-valence nickel ions is greater than or equal to +3. This application adds a reducing cation capable of reducing high-valence nickel ions to the hole transport layer. This reducing cation can undergo a redox reaction with the high-valence nickel ions in the hole transport layer, converting the high-valence nickel ions into low-valence nickel ions. This alleviates the degradation problem of perovskite caused by high-valence nickel ions contacting the perovskite light-absorbing layer, improves the long-term stability of the perovskite layer, and thus enhances the lifespan of the perovskite battery.

[0011] In any embodiment, the reducing cation comprises a lanthanide metal ion.

[0012] In any embodiment, the lanthanide metal ion includes Eu. 2+ Yb 2+ 、Sm 2+ Ce 3+ 、Tb 3+ or Pr 3+ One or more of the above-mentioned lanthanide metal ions can effectively reduce high-valence nickel ions in the hole transport layer to low-valence nickel ions, thereby effectively mitigating the degradation of perovskite.

[0013] In any embodiment, the concentration of reducing cations on the side of the hole transport layer facing away from the first electrode layer is greater than the concentration of reducing cations on the side of the hole transport layer facing the first electrode layer. This ensures that the reducing cations are primarily located on the side of the hole transport layer facing the perovskite layer, thus better mitigating perovskite degradation.

[0014] In any embodiment, the nickel oxide further includes doped cations. Thus, the doped cations can distort the lattice of the nickel oxide, creating defects in the nickel oxide crystal, thereby increasing the hole mobility of the hole transport layer, and consequently improving the photoelectric conversion efficiency and fill factor of the perovskite solar cell.

[0015] In any embodiment, the doped cation includes Li + Cs + 、Rb + Ag + Mg 2+ Ca 2+ Zn 2+ 、Sr 2+ Ba 2+ Fe 2+ Fe 3+ Co 2+ Co 3+ Cu+ Eu 3+ Yb 3+ 、Sm 2+ Ce 4+ 、Tb 4+ Pr 4+ Cu 2+ or Nd 3+ One or more of the above-mentioned doped cations can be added to the hole transport layer to effectively improve the hole mobility of the hole transport layer.

[0016] In any embodiment, the hole transport layer includes a direct contact layer facing the perovskite layer and a non-direct contact layer away from the perovskite layer. The direct contact layer includes nickel oxide and the reducing cation, and the non-direct contact layer includes nickel oxide. Thus, the reducing cation can reduce the high-valence nickel ions at the interface of the hole transport layer near the perovskite layer without excessively affecting the high-valence nickel ions inside the hole transport layer. This reduces the problem of perovskite degradation due to deprotonation reactions when high-valence nickel ions at the interface contact the perovskite layer, while not affecting the promoting effect of high-valence nickel ions on hole transport inside the hole transport layer.

[0017] In any embodiment, at least 60% of the reducing cations are distributed in the direct contact layer. Thus, the distribution of at least 60% of the reducing cations in the direct contact layer can reduce the high-valence nickel ions at the interface of the hole transport layer near the perovskite layer without excessively affecting the high-valence nickel ions inside the hole transport layer.

[0018] In any embodiment, the thickness of the direct contact layer is 0.1 nm to 20 nm, optionally 0.1 nm to 10 nm, or even 2 nm to 10 nm. In this way, the reducing cations can reduce the high-valence nickel ions at the interface to reduce their damage to the perovskite layer material, without excessively affecting the promoting effect of high-valence nickel ions on hole transport within the hole transport layer.

[0019] In any embodiment, the molar ratio of the reducing cation to nickel in the direct contact layer ranges from 0.0001 to 0.2:1, and can be optionally 0.002 to 0.05:1. Thus, controlling the molar ratio of the reducing cation to nickel within the above range can effectively mitigate perovskite degradation and improve the lifespan of perovskite solar cells.

[0020] In any embodiment, the hole transport layer further includes an indirect contact layer located between the direct contact layer and the indirect contact layer. The indirect contact layer comprises nickel oxide and the reducing cation, or the indirect contact layer comprises nickel oxide, the reducing cation, and the doped cation. Thus, the reducing cation can reduce high-valence nickel ions in the nickel oxide. When the indirect contact layer includes a doped cation, the doped cation can distort the lattice of the nickel oxide, creating defects in the nickel oxide crystal, thereby increasing the hole mobility of the hole transport layer and consequently improving the photoelectric conversion efficiency and fill factor of the perovskite solar cell.

[0021] In any embodiment, the thickness of the indirect contact layer is 0.1 nm to 20 nm, optionally 0.1 nm to 10 nm, and more preferably 0.1 nm to 5 nm; and / or, in the indirect contact layer, the molar ratio of reducing cations to nickel ranges from 0.0001 to 0.2:1; optionally 0.002 to 0.05:1; and / or, in the indirect contact layer, when the indirect contact layer includes the doped cations, the molar ratio of the doped cations to nickel ranges from 0.0001 to 0.2:1; optionally 0.001 to 0.1:1. Thus, while effectively improving the hole mobility of the hole transport layer and the photoelectric conversion efficiency of the perovskite solar cell, it is possible to maintain good crystallinity in both the indirect contact layer and the non-contact layer.

[0022] In any embodiment, the density of the direct contact layer, the indirect contact layer and the indirect contact layer is each independently 1% to 100%, and can be selected as 85% to 100%.

[0023] The second aspect of this application provides a method for preparing a perovskite solar cell according to the first aspect of this application, comprising the following steps:

[0024] A first electrode layer, a hole transport layer, a perovskite layer, and a second electrode layer are formed by sequentially stacking them.

[0025] The hole transport layer comprises nickel oxide and reducing cations.

[0026] The above preparation method involves adding reducing cations to the hole transport layer. These reducing cations can reduce high-valence nickel ions, thereby reacting with them to convert them into low-valence nickel ions. This can mitigate the degradation of perovskite caused by the reaction of high-valence nickel ions with the perovskite layer material, improve the long-term stability of the perovskite layer, and extend the lifespan of the perovskite solar cell.

[0027] In any implementation, the preparation of the hole transport layer includes the following steps:

[0028] Multiple hole transport monolayers are sequentially fabricated on the first electrode layer, with each layer stacked on top of the first electrode layer. At least the hole transport monolayers in direct contact with the perovskite layer include the reducing cation. This allows for the doping of different cations into different hole transport monolayers as needed. Furthermore, the reducing cations can reduce high-valence nickel ions at the interface of the hole transport layer near the perovskite layer, reducing the risk of deprotonation reactions that could occur when these high-valence nickel ions contact the perovskite layer, thus improving the long-term stability of the perovskite layer and ultimately extending the lifespan of the perovskite solar cell.

[0029] In any embodiment, in the hole transport monolayer near the perovskite layer, the molar ratio of the reducing cation to nickel is 0.0001~0.2:1, optionally 0.002~0.05:1. This effectively mitigates perovskite degradation and improves the lifespan of perovskite solar cells while maintaining good crystallinity of the hole transport layer.

[0030] In any embodiment, each hole transport monolayer independently contains or does not contain doped cations capable of causing lattice distortion in nickel oxide. By doping the hole transport monolayer with doped cations capable of causing lattice distortion in nickel oxide, defects can be introduced into the nickel oxide crystal, increasing the hole mobility of the hole transport layer, thereby improving the photoelectric conversion efficiency and fill factor of the perovskite solar cell.

[0031] In any embodiment, in the hole transport monolayer containing the doped cations, the molar ratio of the doped cations to nickel is 0.0001~0.2:1, optionally 0.001~0.1:1. This effectively improves the hole mobility of the hole transport layer and the photoelectric conversion efficiency of the perovskite solar cell while maintaining good crystallinity of the hole transport layer.

[0032] In any implementation, the number of layers in the hole transport layer is 2 to 50, and can be selected as 4 to 20 layers.

[0033] In any embodiment, the thickness of each hole transport monolayer is 0.1 nm to 20 nm, and can be selected as 0.5 nm to 10 nm.

[0034] A third aspect of this application provides a photovoltaic module, including a perovskite cell of the first aspect of this application or a perovskite cell prepared by the preparation method of the second aspect of this application.

[0035] The fourth aspect of this application provides a photovoltaic system including the photovoltaic module of the third aspect of this application.

[0036] The fifth aspect of this application provides an electrical device, including the photovoltaic system of the fourth aspect of this application.

[0037] The sixth aspect of this application provides a power generation device, including the photovoltaic system of the fourth aspect of this application.

[0038] Details of one or more embodiments of this application are set forth in the following drawings and description. Other features, objects, and advantages of this application will become apparent from the specification, drawings, and claims. Attached Figure Description

[0039] To better describe and illustrate embodiments or examples of the applications disclosed herein, reference may be made to one or more accompanying drawings. Additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed applications, the embodiments or examples currently described, or the best mode of conduct of these applications as currently understood. Furthermore, throughout the drawings, the same reference numerals denote the same parts. In the drawings:

[0040] Figure 1 This is a schematic diagram of the structure of a perovskite solar cell according to one embodiment of this application;

[0041] Figure 2 This is a schematic diagram of the structure of an electrical device according to one embodiment of this application.

[0042] Explanation of reference numerals in the attached figures:

[0043] 10. Perovskite solar cell; 11. First electrode layer; 12. Hole transport layer; 13. Perovskite layer; 14. Second electrode layer; 121. First hole transport monolayer; 122. Second hole transport monolayer; 123. Third hole transport monolayer. Detailed Implementation

[0044] The following detailed description of some embodiments of the perovskite solar cell of this application is provided with appropriate reference to the accompanying drawings. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided to enable those skilled in the art to fully understand this application and are not intended to limit the subject matter of the claims.

[0045] The "range" disclosed in this application is defined by a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints and can be arbitrarily combined; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60~120 and 80~110 are listed for a specific parameter, it is also expected that ranges of 60~110 and 80~120 are also included. Furthermore, if minimum range values ​​of 1 and 2 are listed, and if maximum range values ​​of 3, 4, and 5 are listed, then the following ranges are all expected: 1~3, 1~4, 1~5, 2~3, 2~4, and 2~5. In this application, unless otherwise stated, the numerical range "a~b" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0~5" indicates that all real numbers between "0" and "5" have been listed in this document; "0~5" is simply a shortened representation of these numerical combinations. Furthermore, stating that a parameter is an integer ≥2 is equivalent to disclosing that the parameter is, for example, an integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc. For instance, stating that a parameter is an integer selected from "2~10" is equivalent to listing the integers 2, 3, 4, 5, 6, 7, 8, 9, and 10.

[0046] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0047] Unless otherwise specified, all steps in this application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, the mention that the method may also include step (c) indicates that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0048] Unless otherwise specified, the terms "comprising" and "including" as used in this application can be open-ended or closed-ended. For example, "comprising" and "including" can mean that other components not listed may also be included, or that only the listed components may be included.

[0049] Unless otherwise specified, the term "or" is inclusive in this application. For example, the phrase "A or B" means "A, B, or both A and B". Further, the condition "A or B" is satisfied by any of the following conditions: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0050] In this application, unless otherwise specified, A (e.g., B) means that B is a non-limiting example of A, and it is understood that A is not limited to B.

[0051] In this application, the terms "multiple" or "various" are used unless otherwise specified, referring to a quantity greater than or equal to 2. For example, "one or more" means one or more types.

[0052] The terms “combinations of,” “any combination of,” and “any combination of” used in this article include all suitable combinations of any two or more of the listed items.

[0053] In this document, the term "suitable" as used in "suitable combination", "suitable method", "any suitable method", etc., refers to the technical solution that enables the implementation of this application.

[0054] In this document, terms such as "preferred," "better," "more suitable," and "ideal" are merely descriptions of more effective implementation methods or embodiments, and should be understood not to limit the scope of protection of this application. If multiple "preferred" terms appear in a technical solution, unless otherwise specified and there are no contradictions or mutual constraints, each "preferred" term shall be independent.

[0055] In this application, terms such as "further," "even further," and "particularly" are used to describe purposes and indicate differences in content, but should not be construed as limiting the scope of protection of this application.

[0056] In this application, the terms "first aspect," "second aspect," "third aspect," "fourth aspect," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly indicating the importance or quantity of the indicated technical features. Moreover, "first," "second," "third," "fourth," etc., serve only as a non-exhaustive enumeration and should be understood not to constitute a closed limitation on quantity.

[0057] In this application, the term "room temperature" generally refers to 4 °C to 35 °C, and may refer to 20 °C ± 5 °C. In some embodiments of this application, room temperature refers to 20 °C to 30 °C.

[0058] In this application, if the unit of a data range is only followed by the right endpoint, it indicates that the units of the left and right endpoints are the same. For example, 3 h~5 h or 3 h~5 h both indicate that the unit of the left endpoint "3" and the right endpoint "5" is h (hours).

[0059] The weights of the relevant components mentioned in the embodiments of this application can refer not only to the content of each component, but also to the proportional relationship between the weights of the components. Therefore, any scaling up or down of the content of the relevant components according to the embodiments of this application is within the scope disclosed in the embodiments of this application. Furthermore, the weights mentioned in the embodiments of this application can be well-known units of mass in the chemical industry, such as μg, mg, g, and kg.

[0060] Existing perovskite solar cells typically suffer from poor long-term stability of the perovskite layer, resulting in short cell lifespans and severely hindering their industrial application. Therefore, improving the long-term stability of the perovskite layer and extending cell lifespan has become a crucial research direction in this field. To address this issue, this application improves the hole transport layer in perovskite solar cells, effectively enhancing the long-term stability of the perovskite layer and thus extending the cell's lifespan.

[0061] Please see Figure 1 The first aspect of this application provides a perovskite solar cell 10, which includes a first electrode layer 11, a hole transport layer 12, a perovskite layer 13, and a second electrode layer 14. The hole transport layer 12 is disposed on the first electrode layer 11 and includes nickel oxide and reducing cations. The reducing cations are capable of reducing high-valence nickel ions, where the valence of the high-valence nickel ions is greater than or equal to +3. The perovskite layer 13 is disposed on the side of the hole transport layer 12 facing away from the first electrode layer 11; the second electrode layer 14 is disposed on the side of the perovskite layer 13 facing away from the hole transport layer 12.

[0062] In the fabrication of the perovskite solar cell 10, the hole transport layer 12 is made of nickel oxide (NiOx), containing divalent nickel ions and nickel ions with valence greater than or equal to +3. These high-valence nickel ions are Brønsted bases, and when they come into contact with the perovskite layer 13, a deprotonation reaction occurs, leading to perovskite degradation. This results in poor long-term stability of the perovskite layer 13, thus affecting the lifespan of the perovskite solar cell 10. The perovskite degradation reaction process is illustrated below:

[0063] HAPbI3 PbI2+HA + +I -

[0064] HA+ A （g） +H +

[0065] I - 1 / 2I 2（g） +e -

[0066] Ni ≥3+ O x +e - +H + Ni ≥2+ O x H

[0067] HAPbI3+Ni ≥3+ O x Ni ≥2+ O x H+PbI2+A （g） +1 / 2I 2（g）

[0068] The perovskite solar cell 10 described above in this application incorporates a reducing cation capable of reducing high-valence nickel ions into the hole transport layer 12. This reducing cation can undergo a redox reaction with the high-valence nickel ions in the hole transport layer 12, converting the high-valence nickel ions into low-valence nickel ions (such as Ni). 2+ This alleviates the degradation of perovskite, improves the long-term stability of the perovskite layer 13, and thus enhances the lifespan of the perovskite solar cell 10.

[0069] It should be noted that although the reducing cations capable of reducing high-valence nickel ions are added to the hole transport layer 12 and then react with the high-valence nickel ions and are consumed, the cations in the portion of the hole transport layer 12 that have reacted with the high-valence nickel ions will react with the halide ions in the perovskite layer 13 and be reduced to reducing cations, since perovskites typically contain halide ions (such as iodide ions). In other words, reducing cations can still be detected in the hole transport layer 12 of the perovskite solar cell 10.

[0070] In some embodiments, the reducing cation comprises a lanthanide metal ion. In some specific examples, the lanthanide metal ion includes Eu. 2+ Yb 2+ 、Sm 2+ Ce 3+ 、Tb 3+ or Pr 3+One or more of the above-mentioned lanthanide metal ions have F orbitals outside their atomic nuclei, and the F orbitals are in a half-filled state; they have good reducing properties and can reduce high-valence nickel ions in the hole transport layer to low-valence nickel ions, thereby effectively alleviating the degradation of perovskite.

[0071] In some embodiments, the concentration of reducing cations on the side of the hole transport layer 12 facing the perovskite layer 13 is greater than the concentration on the side of the hole transport layer 12 facing the first electrode layer 11. In the perovskite solar cell 10, since the side of the hole transport layer 12 in contact with the perovskite layer 13 contains high-valence nickel ions that can contact the perovskite and cause degradation, by making the concentration of reducing cations on the side of the hole transport layer 12 in contact with the perovskite layer 13 greater than the concentration on the side of the hole transport layer 12 facing the first electrode layer 11, the reducing cations mainly reduce the high-valence nickel ions in the hole transport layer 12 on the side of the hole transport layer 12 in contact with the perovskite layer 13, thereby reducing the content of high-valence nickel ions and reducing the contact between high-valence nickel ions and the perovskite material, thus better mitigating the degradation of the perovskite.

[0072] In some embodiments, the nickel oxide of the hole transport layer 12 also includes doped cations capable of causing lattice distortion in the nickel oxide. Because nickel oxide has a low intrinsic mobility, its use as the hole transport layer 12 in a perovskite solar cell 10 results in low hole mobility, leading to poor photovoltaic conversion efficiency (PCE) and fill factor (FF) of the perovskite solar cell 10. To address this, this application adds doped cations capable of causing lattice distortion in the nickel oxide to the hole transport layer 12. After these doped cations are added to the nickel oxide lattice, the difference in radius between them and nickel ions causes lattice distortion in the nickel oxide, creating defects in the nickel oxide crystal, thereby improving the hole mobility of the hole transport layer 12, and consequently improving the photovoltaic conversion efficiency and fill factor of the perovskite solar cell 10.

[0073] In some embodiments, the doped cation includes Li + Cs + 、Rb + Ag + Mg 2+ Ca 2+ Zn 2+ 、Sr 2+ Ba 2+ Fe 2+ Fe 3+ Co 2+ Co 3+ Cu +Eu 3+ Yb 3+ 、Sm 2+ Ce 4+ 、Tb 4+ Pr 4+ Cu 2+ or Nd 3+ One or more of these ions. The ionic radii of these ions are different from those of nickel ions in nickel oxide. Adding them as doping cations to the hole transport layer 12 can effectively improve the hole mobility of the hole transport layer 12.

[0074] In some embodiments, the hole transport layer 12 includes a direct contact layer facing the perovskite layer 13 and a non-direct contact layer away from the perovskite layer 13. The direct contact layer includes nickel oxide and reducing cations, while the non-direct contact layer includes nickel oxide. This configuration allows the reducing cations to reduce high-valence nickel ions at the interface of the hole transport layer 12 near the perovskite layer 13 without excessively affecting the high-valence nickel ions inside the hole transport layer 12. This reduces the degradation of the perovskite due to deprotonation when high-valence nickel ions at the interface contact the perovskite layer 13, while maintaining the promoting effect of high-valence nickel ions on hole transport within the hole transport layer 12.

[0075] In some embodiments, the direct contact layer refers to the portion of the hole transport layer closest to the perovskite layer.

[0076] In some embodiments, the non-direct contact layer refers to a portion of the hole transport layer that is at least separated from the perovskite layer by the aforementioned direct contact layer.

[0077] In some embodiments, at least 60% of the reducing cations in the hole transport layer 12 are distributed in the direct contact layer. The distribution of at least 60% of the reducing cations in the direct contact layer can reduce the high-valence nickel ions at the interface of the hole transport layer near the perovskite layer without excessively affecting the high-valence nickel ions inside the hole transport layer.

[0078] It can be understood that the content of reducing cations in the direct contact layer can be 60%, 62%, 65%, 68%, 70%, 72%, 75%, 78%, 80%, 82%, 85%, 88%, 90%, 92%, 95%, 98%, 100% of the total mass of reducing cations in the hole transport layer 12, or any value within the range formed by any two of the above values.

[0079] In some embodiments, the thickness of the direct contact layer is 0.1 nm to 20 nm; further, the thickness of the direct contact layer is 0.1 nm to 10 nm. By controlling the thickness of the direct contact layer within the above range, the reducing cations in the direct contact layer can effectively reduce the high-valence nickel ions at the interface to reduce their damage to the perovskite layer 13 material, while not affecting the promoting effect of the high-valence nickel ions inside the hole transport layer 12 on hole transport.

[0080] It is understandable that the thickness of the direct contact layer can be 0.1nm, 0.5nm, 0.8nm, 1nm, 1.5nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm, 20nm, or any value within the range formed by any two of the above values.

[0081] In some embodiments, the thickness of the direct contact layer is 2 nm to 10 nm. This allows perovskite solar cells to simultaneously possess high initial photoelectric conversion efficiency and long lifetime, resulting in better overall performance.

[0082] In some embodiments, the molar ratio of reducing cations to nickel in the direct contact layer ranges from 0.0001 to 0.2:1; more specifically, from 0.002 to 0.05:1. Controlling the molar ratio of reducing cations to nickel in the direct contact layer within the above range can effectively mitigate perovskite degradation and improve the lifespan of the perovskite solar cell 10. It is understood that the molar ratio of reducing cations to nickel in the direct contact layer can be 0.0001:1, 0.0005:1, 0.001:1, 0.002:1, 0.005:1, 0.01:1, 0.02:1, 0.05:1, 0.08:1, 0.1:1, 0.12:1, 0.15:1, 0.18:1, 0.2:1, and any ratio within the range formed by any two of the above ratios.

[0083] In some embodiments, the hole transport layer 12 further includes an indirect contact layer located between the direct contact layer and the indirect contact layer. The indirect contact layer comprises nickel oxide and a reducing cation. The indirect contact layer refers to the portion of the hole transport layer located between the direct contact layer and the indirect contact layer. The thickness of this indirect contact layer is 0.1 nm to 20 nm; further, it can be selected as 0.1 nm to 10 nm; even further, it can be selected as 0.1 nm to 5 nm. Understandably, the thickness of the indirect contact layer can be 0.1 nm, 0.5 nm, 0.8 nm, 1 nm, 2 nm, 3 nm, 5 nm, 6 nm, 8 nm, 10 nm, 12 nm, 13 nm, 15 nm, 16 nm, 18 nm, 20 nm, or any value within the range formed by any two of the above values.

[0084] In some embodiments, the hole transport layer 12 further includes an indirect contact layer located between the direct contact layer and the indirect contact layer. The indirect contact layer comprises nickel oxide, a reducing cation, and a doped cation. The thickness of the indirect contact layer is 0.1 nm to 20 nm; further, it can be selected as 0.1 nm to 10 nm; even further, it can be selected as 0.1 nm to 5 nm. Understandably, the thickness of the indirect contact layer can be 0.1 nm, 0.5 nm, 0.8 nm, 1 nm, 2 nm, 3 nm, 5 nm, 6 nm, 8 nm, 10 nm, 12 nm, 13 nm, 15 nm, 16 nm, 18 nm, 20 nm, or any value within the range formed by any two of the above values.

[0085] In some embodiments, the molar ratio of reducing cations to nickel in the indirect contact layer ranges from 0.0001 to 0.2:1, and is further optionally 0.002 to 0.05:1; the molar ratio of doped cations to nickel ranges from 0.0001 to 0.2:1, and is further optionally 0.001 to 0.1:1. This configuration effectively improves the hole mobility of the hole transport layer 12 and the photoelectric conversion efficiency of the perovskite solar cell 10, while maintaining good crystallinity in both the indirect contact layer and the non-contact layer.

[0086] It is understandable that the molar ratio of reducing cations to nickel in the indirect contact layer can be 0.0001:1, 0.0005:1, 0.001:1, 0.002:1, 0.005:1, 0.01:1, 0.02:1, 0.05:1, 0.08:1, 0.1:1, 0.12:1, 0.15:1, 0.18:1, 0.2:1, and any two of the above ratios within a certain range. The molar ratio of the doped cation to nickel can be any value within the range of 0.0001:1, 0.0005:1, 0.001:1, 0.002:1, 0.005:1, 0.01:1, 0.02:1, 0.05:1, 0.08:1, 0.1:1, 0.12:1, 0.15:1, 0.18:1, 0.2:1, and any ratio within the range formed by any two of the above ratios.

[0087] The second aspect of this application provides a method for preparing the perovskite solar cell 10 of the first aspect of this application, the method comprising the following steps S100 to S400:

[0088] Step S100: Provide the first electrode layer 11.

[0089] The first electrode layer 11 can serve as a substrate, on which other functional layers of the perovskite solar cell 10 are formed.

[0090] In some embodiments, the first electrode layer 11 may be made of transparent conductive glass. The transparent conductive glass includes one or more of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), tungsten-doped indium oxide (IWO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), or indium zinc oxide (IZO).

[0091] Step S200: Prepare a hole transport layer 12 on the first electrode layer 11.

[0092] Using the first electrode layer 11 as a substrate, a hole transport layer 12 can be fabricated on the first electrode layer 11 by magnetron sputtering or solution method. The hole transport layer 12 includes nickel oxide and reducing cations.

[0093] During the fabrication of the perovskite solar cell 10, the hole transport layer 12 typically contains nickel ions with a valence greater than or equal to +3. These high-valence nickel ions within the hole transport layer 12 facilitate hole transport. However, at the interface between the hole transport layer 12 and the perovskite layer 13, the high-valence nickel ions contacting the perovskite layer 13 can lead to a deprotonation reaction, causing perovskite degradation and affecting the long-term stability of the perovskite layer 13 and the lifespan of the perovskite solar cell 10. By adding a reducing cation capable of reducing high-valence nickel ions to the hole transport layer 12, this reducing cation can undergo a redox reaction with the high-valence nickel ions in the hole transport layer 12, converting them into low-valence nickel ions (such as Ni). 2+ This alleviates the degradation of perovskite, improves the long-term stability of the perovskite layer 13, and thus improves the lifespan of the perovskite solar cell 10.

[0094] In some embodiments, the reducing cation comprises a lanthanide metal ion. Specifically, the lanthanide metal ion includes Eu. 2+ Yb 2+ 、Sm 2+ Ce 3+ 、Tb 3+ or Pr 3+ One or more of the above-mentioned lanthanide metal ions have F orbitals outside their atomic nuclei, and the F orbitals are in a half-filled state; they have good reducing properties and can reduce high-valence nickel ions in hole transport layer 12 to low-valence nickel ions, thereby effectively alleviating the degradation of perovskite.

[0095] In some embodiments, the hole transport layer 12 further includes doped cations capable of causing lattice distortion in nickel oxide. Nickel oxide has a low intrinsic mobility, resulting in poor photoelectric conversion efficiency and fill factor in the perovskite solar cell 10 using nickel oxide as the hole transport layer 12. This application improves the hole mobility of the hole transport layer 12 by adding doped cations capable of causing lattice distortion in nickel oxide during the fabrication of the hole transport layer 12. After these doped cations are added to the nickel oxide lattice, the difference in radius between them and nickel ions causes lattice distortion in the nickel oxide, creating defects in the nickel oxide crystal. This improves the hole mobility of the hole transport layer 12, thereby enhancing the photoelectric conversion efficiency and fill factor of the perovskite solar cell 10.

[0096] In some embodiments, the doped cation includes Li + Cs + 、Rb + Ag + Mg 2+ Ca 2+ Zn 2+ 、Sr 2+ Ba 2+ Fe2+ Fe 3+ Co 2+ Co 3+ Cu + Eu 3+ Yb 3+ 、Sm 2+ Ce 4+ 、Tb 4+ Pr 4+ Cu 2+ or Nd 3+ One or more of these ions. The ionic radii of these ions are different from those of nickel ions in nickel oxide. Adding them as doping cations to the hole transport layer 12 can effectively improve the hole mobility of the hole transport layer 12.

[0097] In some embodiments, the hole transport layer 12 is prepared by a method of multiple cycles of magnetron sputtering deposition on the first electrode layer 11 to form a multilayer hole transport monolayer. The multilayer hole transport monolayers are stacked on the first electrode layer 11 to form the hole transport layer 12. The method of preparing each hole transport monolayer by multiple cycles of magnetron sputtering deposition facilitates the doping of reducing cations and doped cations at different positions in the hole transport layer 12.

[0098] In some embodiments, during magnetron sputtering deposition of hole transport monolayers, reducing cations are doped into the hole transport monolayer 12 near the perovskite layer 13. While high-valence nickel ions within the hole transport layer 12 facilitate hole transport, these high-valence nickel ions at the interface between the hole transport layer 12 and the perovskite layer 13 can cause deprotonation and degradation of the perovskite. By doping the hole transport monolayer at the interface between the hole transport layer 12 and the perovskite layer 13 with reducing cations, the degradation of the perovskite can be better mitigated, and the hole transport layer 12 can exhibit better hole transport performance.

[0099] In one specific example, the hole transport layer 12 is formed by the following single-target magnetron sputtering method:

[0100] A single-target magnetron sputtering method is used to deposit a direct contact layer, an indirect contact layer, and a non-direct contact layer. The direct contact layer refers to a hole transport monolayer that is in direct contact with the perovskite layer 13. The indirect contact layer refers to a hole transport monolayer that is separated from the perovskite layer 13 only by the aforementioned direct contact layer. The non-direct contact layer is any hole transport monolayer other than the direct contact layer and the indirect contact layer.

[0101] First, a first hole transport monolayer 121 is deposited by magnetron sputtering on the first electrode layer 11 as an indirect contact layer. During the preparation of the indirect contact layer, the nickel oxide target selected may or may not introduce doped cations, so that the prepared indirect contact layer contains or does not contain a certain amount of doped cations. Then, a second hole transport monolayer 122 is deposited by magnetron sputtering on the indirect contact layer as an indirect contact layer. During the preparation of the indirect contact layer, the nickel oxide target selected may or may not introduce reducing cations and doped cations, so that the prepared indirect contact layer contains or does not contain a certain amount of doped cations. Then, a third hole transport monolayer 123 is deposited by magnetron sputtering on the indirect contact layer as a direct contact layer. During the preparation of the direct contact layer, the nickel oxide target selected may introduce reducing cations, so that the prepared direct contact layer contains a certain amount of reducing cations.

[0102] It should be noted that, since the indirect contact layer is in contact with the direct contact layer and the direct contact layer contains reducing cations, based on factors such as ion diffusion, even if reducing cations are not introduced into the indirect contact layer during preparation, a certain amount of reducing cations will still exist in the indirect contact layer of the final perovskite solar cell 10.

[0103] In some embodiments, the direct contact layer, indirect contact layer, and non-contact layer are all prepared by radio frequency sputtering. The working gases used in the radio frequency sputtering process are argon and oxygen, with the oxygen flow rate / (oxygen flow rate + argon flow rate) ratio ranging from 0.001 to 0.5:1. The temperature of the deposition stage during sputtering ranges from 20°C to 300°C. The vacuum level of the reaction chamber during sputtering ranges from 1.0... -3 Pa~1.0 -1 Pa. Sputtering power density range is 5 W / cm². 2 ~50W / cm 2 The deposition time ranged from 5s to 180s.

[0104] It can be understood that the ratio of oxygen flow rate / (oxygen flow rate + argon flow rate) can be 0.001:1, 0.005:1, 0.008:1, 0.01:1, 0.015:1, 0.02:1, 0.05:1, 0.08:1, 0.1:1, 0.15:1, 0.2:1, 0.25:1, 0.3:1, 0.35:1, 0.4:1, 0.45:1, 0.5:1, and any ratio within the range formed by any two of the above ratios. The temperature of the deposition stage can be 20℃, 50℃, 80℃, 100℃, 120℃, 140℃, 150℃, 160℃, 180℃, 200℃, 220℃, 240℃, 250℃, 260℃, 280℃, 300℃, or any value within the range formed by any two of the above values. The vacuum level of the reaction chamber can be 1.0. -3 Pa, 5.0 -3 Pa, 8.0 -3 Pa, 1.0 -2 Pa, 5.0 -2 Pa, 8.0 -2 Pa, 1.0 -1 Pa, and any value within the range formed by any two of the above values. The sputtering power density can be 5 W / cm². 2 8W / cm 2 10W / cm 2 12W / cm 2 14W / cm 2 15W / cm 2 16W / cm 2 18W / cm 2 20W / cm 2 22W / cm 2 24W / cm 2 25W / cm 2 26W / cm 2 28W / cm 2 30W / cm 2 32W / cm 2 34W / cm 2 35W / cm 2 36W / cm 2 38W / cm 2 40W / cm 2 42W / cm 2 44W / cm 2 45W / cm 2 46W / cm 2 48W / cm 2 50W / cm 2The deposition time can be 5s, 10s, 20s, 30s, 40s, 50s, 60s, 70s, 80s, 90s, 100s, 110s, 120s, 130s, 140s, 150s, 160s, 170s, 180s, or any value within the range formed by any two of the above values.

[0105] In some embodiments, the molar ratio of reducing cations to nickel in the direct and indirect contact layers doped with reducing cations ranges from 0.0001 to 0.2:1; optionally, it is 0.002 to 0.05:1. Controlling the molar ratio of reducing cations to nickel within this range effectively mitigates perovskite degradation, improves the lifespan of perovskite solar cells, and maintains good crystallinity in both the direct and indirect contact layers. It is understood that the molar ratio of reducing cations to nickel can be 0.0001:1, 0.0006:1, 0.002:1, 0.008:1, 0.01:1, 0.015:1, 0.02:1, 0.03:1, 0.04:1, 0.05:1, 0.06:1, 0.07:1, 0.08:1, 0.09:1, 0.1:1, 0.12:1, 0.14:1, 0.16:1, 0.18:1, 0.2:1, or any value within the range formed by any two of the above values.

[0106] In some embodiments, the molar ratio of the doped cation to nickel in the indirect contact layer and the non-direct contact layer doped with doped cations ranges from 0.0001 to 0.2:1; optionally, it is 0.001 to 0.1:1. By controlling the molar ratio of the doped cation to nickel within the above range, the hole mobility of the hole transport layer 12 and the photoelectric conversion efficiency of the perovskite solar cell 10 can be effectively improved, while maintaining good crystallinity in the indirect contact layer and the non-direct contact layer. It can be understood that the molar ratio of the doped cation to nickel can be 0.0001:1, 0.0005:1, 0.001:1, 0.005:1, 0.01:1, 0.02:1, 0.03:1, 0.04:1, 0.05:1, 0.06:1, 0.08:1, 0.1:1, 0.12:1, 0.15:1, 0.18:1, 0.2:1, and any value within the range formed by any two of the above values.

[0107] Specifically, the total number of hole transport monolayers in hole transport layer 12 can range from 1 to 50 layers, and can be selected from 4 to 20 layers. Based on the effect of magnetron sputtering, the thickness of each hole transport monolayer ranges from 0.1 nm to 20 nm, and can be selected from 0.5 nm to 10 nm. Based on the effect of magnetron sputtering, the density of the hole transport monolayer ranges from 1% to 100%, and can be selected from 85% to 100%. It can be understood that the number of hole transport monolayers can be 1, 4, 6, 8, 10, 12, 14, 15, 16, 18, 20, 25, 28, 30, 32, 35, 38, 40, 42, 45, 48, 50 layers, or any integer value within the range formed by any two of the above values. The thickness of each hole transport monolayer can be 0.1 nm, 0.5 nm, 1 nm, 2 nm, 4 nm, 5 nm, 6 nm, 8 nm, 10 nm, 12 nm, 14 nm, 15 nm, 16 nm, 18 nm, 20 nm, or any value within the range formed by any two of the above values. The density of each hole transport monolayer can be 1%, 5%, 8%, 10%, 12%, 15%, 18%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100%, or any value within the range formed by any two of the above values.

[0108] In some embodiments, the hole transport layer 12 is formed by the following multi-target magnetron co-sputtering method:

[0109] First, a first hole transport monolayer 121 is deposited by magnetron sputtering on the first electrode layer 11 as an indirect contact layer. During the preparation of the indirect contact layer, the nickel oxide target used can be selectively incorporating or not incorporating doped cations, thus ensuring that the prepared indirect contact layer contains or does not contain a certain amount of doped cations. Then, a second hole transport monolayer 122 is deposited by magnetron sputtering on the indirect contact layer as an indirect contact layer. During the preparation of the indirect contact layer, both a nickel oxide target containing doped cations and an AO target can be selected simultaneously. n Target materials; among which, AO n The oxide corresponding to the reducing cation is represented by n, which represents the number of oxygen atoms. The prepared indirect contact layer contains a certain amount of reducing cations and doped cations. Then, a third hole transport monolayer 123 is deposited on the indirect contact layer by magnetron sputtering as the direct contact layer. During the preparation of the direct contact layer, both nickel oxide and AO targets can be used simultaneously. n The target material is used to make the prepared direct contact layer contain a certain amount of reducing cations.

[0110] In some embodiments, the direct contact layer, indirect contact layer, and indirect contact layer are all prepared by radio frequency sputtering. The working gases used in the radio frequency sputtering process are argon and oxygen, with the oxygen flow rate / (oxygen flow rate + argon flow rate) ratio ranging from 0.001 to 0.5:1. The deposition stage temperature during co-sputtering ranges from 20°C to 300°C. The vacuum level of the reaction chamber during co-sputtering ranges from 1.0... -3 Pa~1.0 -1 Pa. The power density range of the cation-doped nickel oxide target during co-sputtering is 5 W / cm². 2 ~50W / cm 2 AO during co-splash n The power density range of the target material is 2W / cm². 2 ~40W / cm 2 The deposition time ranged from 5s to 180s.

[0111] It can be understood that the ratio of oxygen flow rate / (oxygen flow rate + argon flow rate) can be 0.001:1, 0.005:1, 0.008:1, 0.01:1, 0.015:1, 0.02:1, 0.05:1, 0.08:1, 0.1:1, 0.15:1, 0.2:1, 0.25:1, 0.3:1, 0.35:1, 0.4:1, 0.45:1, 0.5:1, and any ratio within the range formed by any two of the above ratios. The temperature of the deposition stage can be 20℃, 50℃, 80℃, 100℃, 120℃, 140℃, 150℃, 160℃, 180℃, 200℃, 220℃, 240℃, 250℃, 260℃, 280℃, 300℃, or any value within the range formed by any two of the above values. The vacuum level of the reaction chamber can be 1.0. -3 Pa, 5.0 -3 Pa, 8.0 -3 Pa, 1.0 -2 Pa, 5.0 -2 Pa, 8.0 -2 Pa, 1.0 -1 Pa, and any value within the range formed by any two of the above values. The power density of the cation-doped nickel oxide target during co-sputtering can be 5 W / cm². 2 8W / cm 2 10W / cm 2 12W / cm 2 14W / cm 2 15W / cm 2 16W / cm 2 18W / cm 2 20W / cm 222W / cm 2 24W / cm 2 25W / cm 2 26W / cm 2 28W / cm 2 30W / cm 2 32W / cm 2 34W / cm 2 35W / cm 2 36W / cm 2 38W / cm 2 40W / cm 2 42W / cm 2 44W / cm 2 45W / cm 2 46W / cm 2 48W / cm 2 50W / cm 2 And any value within the range formed by any two of the above values. AO during co-sputtering n The power density of the target material can be 2W / cm². 2 5W / cm 2 10W / cm 2 15W / cm 2 20W / cm 2 25W / cm 2 30W / cm 2 35W / cm 2 40W / cm 2 The deposition time can be 5s, 10s, 20s, 30s, 40s, 50s, 60s, 70s, 80s, 90s, 100s, 110s, 120s, 130s, 140s, 150s, 160s, 170s, 180s, or any value within the range formed by any two of the above values.

[0112] In some embodiments, the molar ratio of reducing cations to nickel in the direct and indirect contact layers doped with reducing cations ranges from 0.0001 to 0.2:1; optionally, it is 0.002 to 0.05:1. Controlling the molar ratio of reducing cations to nickel within this range effectively mitigates perovskite degradation, improves the lifespan of the perovskite solar cell, and maintains good crystallinity in both the direct and indirect contact layers. It is understood that the molar ratio of reducing cations to nickel can be 0.0001:1, 0.0006:1, 0.002:1, 0.008:1, 0.01:1, 0.015:1, 0.02:1, 0.03:1, 0.04:1, 0.05:1, 0.06:1, 0.07:1, 0.08:1, 0.09:1, 0.1:1, 0.12:1, 0.14:1, 0.16:1, 0.18:1, 0.2:1, or any value within the range formed by any two of the above values.

[0113] In some embodiments, the molar ratio of the doped cation to nickel in the indirect contact layer and the non-direct contact layer doped with doped cations ranges from 0.0001 to 0.2:1; optionally, it is 0.001 to 0.1:1. By controlling the molar ratio of the doped cation to nickel within the above range, the hole mobility of the hole transport layer 12 and the photoelectric conversion efficiency of the perovskite solar cell 10 can be effectively improved, while maintaining good crystallinity in the indirect contact layer and the non-direct contact layer. It can be understood that the molar ratio of the doped cation to nickel can be 0.0001:1, 0.0005:1, 0.001:1, 0.005:1, 0.01:1, 0.02:1, 0.03:1, 0.04:1, 0.05:1, 0.06:1, 0.08:1, 0.1:1, 0.12:1, 0.15:1, 0.18:1, 0.2:1, and any value within the range formed by any two of the above values.

[0114] Specifically, the total number of hole transport monolayers in hole transport layer 12 can range from 1 to 30 layers, and can be selected from 4 to 20 layers. Depending on the effect of magnetron sputtering, the thickness of the hole transport monolayer ranges from 0.2 nm to 20 nm, and can be selected from 1 nm to 10 nm. Depending on the effect of magnetron sputtering, the density of the hole transport monolayer ranges from 1% to 100%, and can be selected from 85% to 100%.

[0115] It is understood that the thickness of the second hole transport monolayer 122, which serves as an indirect contact layer, is 0.1~20 nm, further selectable as 0.1~10 nm, and even more selectable as 0.1~5 nm; the thickness of the third hole transport monolayer 123, which serves as a direct contact layer, is 0.1~20 nm, further selectable as 0.1~10 nm, and even more selectable as 0.1~5 nm. The total number of hole transport monolayers can be 1, 4, 6, 8, 10, 12, 14, 15, 16, 18, 20, 25, 28, 30 layers, or any integer value within the range formed by any two of the above values. The thickness of each hole transport monolayer can be 0.2nm, 0.5nm, 1nm, 2nm, 4nm, 5nm, 6nm, 8nm, 10nm, 12nm, 14nm, 15nm, 16nm, 18nm, 20nm, or any value within the range formed by any two of the above values. The density of each hole transport monolayer can be 1%, 5%, 8%, 10%, 12%, 15%, 18%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100%, or any value within the range formed by any two of the above values.

[0116] Step S300: Prepare a perovskite layer 13 on the surface of the hole transport layer 12 opposite to the first electrode layer 11.

[0117] After forming the hole transport layer 12 on the first electrode layer 11, a perovskite layer 13 is prepared on the surface of the hole transport layer 12 facing away from the first electrode layer 11 as the light-absorbing layer of the perovskite solar cell 10.

[0118] In some embodiments, the material of the perovskite layer 13 may include one or more of ABX3 or A2CDX6, wherein A includes organic cations, Li + Na + K + 、Rb + or Cs + One or more of the following; B includes Pb 2+ Sn 2+ Be 2+ Mg 2+ Ca 2+ 、Sr 2+ Ba 2+ Zn 2+ 、Ge 2+ Fe 2+ Co 2+ Cu 2+ or Ni 2+ One or more of the following; C includes Cs+ , Ag + , K + or Ru + one or more of; D comprises Bi 3+ , Ni 3+ , Fe 3+ , Cu 3+ , Sb 3+ or In 3+ one or more of; X comprises Br - or I - one or more of. For example, the material of the perovskite layer 13 can be CH3NH3PbI3, CH3NH3SnI3, CH3NH3PbI2Br or CH3NH3Pb(I 1- x Br x )3 (wherein 0<x<1) one or more of.

[0119] Step S400: preparing a second electrode layer 14 on a side of the perovskite layer 13 facing away from the hole transport layer 12.

[0120] After the perovskite layer 13 is prepared and formed, the second electrode layer 14 can be prepared on a surface of the perovskite layer 13 facing away from the hole transport layer 12 by a vacuum thermal evaporation coating process, thereby forming the perovskite battery 10.

[0121] In some embodiments, the material of the second electrode layer 14 can comprise one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, tungsten-doped indium oxide, aluminum-doped zinc oxide, boron-doped zinc oxide or indium zinc oxide.

[0122] In some embodiments, an electron transport layer can be further arranged between the perovskite layer 13 and the second electrode layer 14, for transporting electrons and suppressing electron backflow.

[0123] In some embodiments, the perovskite battery 10 can further comprise functional layers such as a barrier layer and a passivation layer, the barrier layer comprises a hole blocking layer or an electron blocking layer; the passivation layer is used for passivating perovskite interface defects.

[0124] In some embodiments, the perovskite battery 10 can also be a stacked battery containing perovskite batteries, and stacked perovskite batteries include, but are not limited to, perovskite-perovskite stacked batteries, perovskite-crystalline silicon stacked batteries, perovskite-heterojunction stacked batteries, etc.

[0125] A third aspect of the present application provides a photovoltaic module, comprising the perovskite battery 10 according to the first aspect of the present application or the perovskite battery 10 prepared by the preparation method according to the second aspect of the present application. By adopting the above perovskite battery 10 of the present application, the photovoltaic module of the present application has a long service life.

[0126] The photovoltaic module mentioned above includes one or more perovskite cells 10, which can be selected according to specific application scenarios; further, the photovoltaic module mentioned above includes multiple perovskite cells 10, which are connected in series or in parallel to form a cell.

[0127] In some embodiments, the photovoltaic module further includes a photovoltaic glass layer, an adhesive layer, and a backsheet.

[0128] The solar cell has an adhesive layer on each of its two surfaces. A backsheet is provided on the surface of one adhesive layer away from the solar cell, and a photovoltaic glass layer is provided on the surface of the other adhesive layer away from the solar cell.

[0129] The photovoltaic glass layer and backsheet are used to protect the perovskite solar cell 10, and they have the functions of sealing, insulation and waterproofing; the adhesive layer plays the role of bonding the photovoltaic glass layer to the solar cell and bonding the backsheet to the solar cell.

[0130] Optionally, the photovoltaic glass layer is made of tempered glass, the backsheet is made of TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the adhesive layer is made of EVA (polyethylene-polyvinyl acetate copolymer).

[0131] Furthermore, the aforementioned photovoltaic modules also include junction boxes and outer frames.

[0132] Junction boxes are used to protect the entire photovoltaic module's power generation system. They are essentially a current transfer station. When a cell short-circuits, the junction box will automatically disconnect the short-circuited cell string.

[0133] The outer frame serves to support and protect the entire photovoltaic module. The frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0134] Furthermore, silicone is used to bond and seal the connections between the frame and other parts of the photovoltaic module. The photovoltaic module can convert solar energy into electrical energy, which can then be stored in batteries or used to power loads.

[0135] In some embodiments, the photovoltaic module is a solar panel.

[0136] The fourth aspect of this application provides a photovoltaic system including the photovoltaic module of the third aspect of this application.

[0137] The photovoltaic system utilizes the perovskite cells 10 in the aforementioned photovoltaic modules to directly convert solar radiation energy into electrical energy, exhibiting high efficiency and good stability; furthermore, the aforementioned photovoltaic system is a photovoltaic power generation system.

[0138] Photovoltaic modules are the core component of a photovoltaic power generation system. The aforementioned photovoltaic system includes one or more photovoltaic modules, which can be selected according to specific application scenarios. Furthermore, when the aforementioned photovoltaic system includes multiple photovoltaic modules, the multiple photovoltaic modules form a photovoltaic array.

[0139] The aforementioned photovoltaic system can be a stand-alone photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0140] An independent photovoltaic (PV) power generation system includes a PV array, battery bank, charge controller, power electronic converter (inverter), and load. Its working principle is that solar radiation energy is first converted into electrical energy by the PV array, then converted by the power electronic converter to supply power to the load. Simultaneously, excess electrical energy is stored as chemical energy in an energy storage device after passing through the charge controller. Thus, when sunlight is insufficient, the energy stored in the battery can be converted into 220V AC, 50Hz electrical energy through the power electronic inverter, filter, and power frequency transformer to supply AC loads.

[0141] A grid-connected photovoltaic (PV) power generation system includes a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and system monitoring. Its working principle is that solar radiation energy is converted by the photovoltaic array, then converted into high-voltage DC by a high-frequency DC converter, and finally inverted by the power electronic inverter to output a sinusoidal alternating current to the grid that is in phase with the grid voltage.

[0142] The two photovoltaic power generation systems mentioned above each have their own characteristics and can be selected according to the specific application scenario.

[0143] Please see Figure 2 The fifth aspect of this application provides an electrical device, including the photovoltaic system of the fourth aspect of this application.

[0144] In some embodiments, the power-consuming device is a common device including the solar cell of this application, such as those in the communications, transportation, industrial and agricultural, and lighting fields. Examples of power-consuming devices include satellites, communication equipment, traffic lights, lighthouses, wireless telephone booths, monitoring equipment in the oil drilling field, power systems, camping lights, electric vehicles, electronic device chargers, building facades, etc.

[0145] A sixth aspect of this application provides a power generation device that includes the photovoltaic system of the fourth aspect of this application. It is understood that in the aforementioned power generation device, the photovoltaic system is a photovoltaic power generation system.

[0146] The following describes embodiments of this application. The embodiments described below are exemplary and are only used to explain this application, and should not be construed as limiting this application. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in this field or according to the product instructions. Reagents or instruments used, unless otherwise specified, are all conventional products that can be obtained commercially.

[0147] Example 1:

[0148] 1) Take a set of FTO conductive glass with a specification of 10cm*10cm, use a laser marking machine to etch away the 0.5cm area on both sides of the FTO conductive glass, clean it with a cleaning agent, and then sonicate the FTO conductive glass in deionized water, ethanol and acetone for 10 minutes in sequence. After sonication, blow it dry with nitrogen gas for use.

[0149] 2) Take the dried FTO conductive glass as the first electrode layer, and use magnetron sputtering to prepare three first hole transport monolayers with a thickness of 3 nm as indirect contact layers on the FTO conductive glass. Then prepare one second hole transport monolayer with a thickness of 3 nm as an indirect contact layer. Finally prepare one third hole transport monolayer with a thickness of 3 nm as a direct contact layer.

[0150] The non-direct contact layer uses Li-doped cations. + Nickel oxide target, Li in the target + The molar ratio of nickel to nickel is 0.02:1; the indirect contact layer uses Eu containing reducing cations. 2+ and doped cation Li + Nickel oxide target material, the target material contains Eu 2+ The molar ratio of Li to nickel is 0.005:1. + The molar ratio of nickel to 0.0001:1; the direct contact layer uses Eu containing reducing cations. 2+ Nickel oxide target material, the target material contains Eu 2+ The molar ratio of argon to nickel is 0.005:1. The working gas used during sputtering is a mixture of argon and oxygen, with an oxygen flow rate to (oxygen flow rate + argon flow rate) ratio of 2:300. The temperature of the deposition stage is controlled between 100℃ and 150℃ during sputtering. The vacuum level in the reaction chamber is controlled at 1.0*10⁻⁶ during sputtering. -2 Pa ~ 1.0 * 10 -1 Pa. Sputtering power density is 10 W / cm³. 2 The deposition time for each layer is 20 seconds.

[0151] 3) After laser scribing, the FTO conductive glass with the deposited nickel oxide hole transport layer is placed in an ultrasonic cleaning device and cleaned for 1 minute, then dried at 100°C for 10 minutes. A Cs layer with a thickness of approximately 500 nm is then coated on the surface of the nickel oxide hole transport layer facing away from the FTO conductive glass. 0.1 FA 0.85 MA 0.05 PbI 2.7 Br 0.3 The perovskite film was continuously blown onto the film surface with an air knife for 30 seconds, and then transferred to a heating stage for annealing at 100°C for 10 minutes to form a perovskite layer.

[0152] 4) Utilizing vacuum thermal evaporation coating technology, at a depth of 1*10... -6 Under Torr conditions, C layers with a thickness of 50 nm are sequentially deposited. 60 A 20nm thick BCP and an 80nm thick Cu electrode were laser-etched and then a 100nm thick Cu electrode was deposited by vapor deposition.

[0153] 5) Large-area perovskite devices are formed into a series structure by laser scribing, thus completing the fabrication of perovskite solar cells.

[0154] Example 2:

[0155] This embodiment is basically the same as Embodiment 1, except that: in the indirect contact layer and indirect contact layer of the hole transport layer, cation Li is doped. + The molar ratio with nickel is 0.001:1.

[0156] Example 3:

[0157] This embodiment is basically the same as Embodiment 1, except that: in the indirect contact layer and indirect contact layer of the hole transport layer, cation Li is doped. + The molar ratio of nickel to nickel is 0.02:1.

[0158] Example 4:

[0159] This embodiment is basically the same as Embodiment 1, except that: in the indirect contact layer and indirect contact layer of the hole transport layer, cation Li is doped. + The molar ratio of nickel to nickel is 0.1:1.

[0160] Example 5:

[0161] This embodiment is basically the same as Embodiment 1, except that: in the indirect contact layer and indirect contact layer of the hole transport layer, cation Li is doped. + The molar ratio of nickel to nickel is 0.15:1.

[0162] Example 6:

[0163] This embodiment is basically the same as Embodiment 1, except that: in the indirect contact layer and indirect contact layer of the hole transport layer, cation Li is doped. + The molar ratio of nickel to nickel is 0.2:1.

[0164] Example 7:

[0165] This embodiment is basically the same as Embodiment 1, except that in the indirect contact layer and the direct contact layer of the hole transport layer, the reducing cation Eu is used. 2+ The molar ratio of nickel to nickel is 0.0001:1.

[0166] Example 8:

[0167] This embodiment is basically the same as Embodiment 1, except that in the indirect contact layer and the direct contact layer of the hole transport layer, the reducing cation Eu is used. 2+ The molar ratio of nickel to nickel is 0.002:1.

[0168] Example 9:

[0169] This embodiment is basically the same as Embodiment 1, except that in the indirect contact layer and the direct contact layer of the hole transport layer, the reducing cation Eu is used. 2+ The molar ratio of nickel to nickel is 0.05:1.

[0170] Example 10:

[0171] This embodiment is basically the same as Embodiment 1, except that in the indirect contact layer and the direct contact layer of the hole transport layer, the reducing cation Eu is used. 2+ The molar ratio of nickel to nickel is 0.1:1.

[0172] Example 11:

[0173] This embodiment is basically the same as Embodiment 1, except that in the indirect contact layer and the direct contact layer of the hole transport layer, the reducing cation Eu is used. 2+ The molar ratio of nickel to nickel is 0.2:1.

[0174] Example 12:

[0175] This embodiment is basically the same as Embodiment 1, except that the reducing cation in the indirect contact layer and the direct contact layer of the hole transport layer is Yb. 2+ And Yb 2+ The molar ratio of nickel to Mg is 0.008:1; the doped cation in both the indirect and indirect contact layers is Mg. 2+ Mg 2+ The molar ratio of nickel to nickel is 0.015:1.

[0176] Example 13:

[0177] This embodiment is basically the same as Embodiment 12, except that the non-direct contact layer and indirect contact layer in the hole transport layer are doped with cation Mg. 2+ The molar ratio of nickel to nickel is 0.12:1.

[0178] Example 14:

[0179] This embodiment is basically the same as Embodiment 12, except that in the indirect contact layer and the direct contact layer of the hole transport layer, the reducing cation Yb 2+ The molar ratio of nickel to nickel is 0.1:1.

[0180] Example 15:

[0181] This embodiment is basically the same as Embodiment 1, except that the reducing cation is Ce in both the indirect and direct contact layers of the hole transport layer. 3+ And Ce 3+ The molar ratio of nickel to styrene is 0.006:1; in both the indirect and indirect contact layers, the doped cation is Sr. 2+ Sr 2+ The molar ratio of nickel to nickel is 0.05:1.

[0182] Example 16:

[0183] This embodiment is basically the same as Embodiment 15, except that the doped cation in the indirect contact layer and the indirect contact layer of the hole transport layer is Sr. 2+ The molar ratio of nickel to nickel is 0.15:1.

[0184] Example 17:

[0185] This embodiment is basically the same as Embodiment 15, except that in the indirect contact layer and the direct contact layer of the hole transport layer, the reducing cation Ce is used. 3+ The molar ratio of nickel to nickel is 0.1:1.

[0186] Example 18:

[0187] This embodiment is basically the same as Embodiment 1, except that in step 2), the dried FTO conductive glass is used as the first electrode layer. Three first hole transport monolayers with a thickness of 3 nm are firstly prepared on the FTO conductive glass as indirect contact layers by magnetron sputtering. Then, one second hole transport monolayer with a thickness of 3 nm is prepared as an indirect contact layer. Finally, one third hole transport monolayer with a thickness of 2 nm is prepared as a direct contact layer. The doping materials and ratios of each layer are the same as in Embodiment 1.

[0188] Example 19:

[0189] This embodiment is basically the same as Embodiment 1, except that in step 2), the dried FTO conductive glass is used as the first electrode layer. Three first hole transport monolayers with a thickness of 3 nm are firstly prepared on the FTO conductive glass as indirect contact layers by magnetron sputtering. Then, one second hole transport monolayer with a thickness of 3 nm is prepared as an indirect contact layer. Finally, one third hole transport monolayer with a thickness of 0.1 nm is prepared as a direct contact layer. The doping materials and ratios of each layer are the same as in Embodiment 1.

[0190] Example 20:

[0191] This embodiment is basically the same as Embodiment 1, except that in step 2), the dried FTO conductive glass is used as the first electrode layer. Three first hole transport monolayers with a thickness of 3 nm are firstly prepared on the FTO conductive glass by magnetron sputtering as indirect contact layers, then one second hole transport monolayer with a thickness of 3 nm is prepared as an indirect contact layer, and finally one third hole transport monolayer with a thickness of 5 nm is prepared as a direct contact layer. The doping materials and ratios of each layer are the same as in Embodiment 1.

[0192] Example 21:

[0193] This embodiment is basically the same as Embodiment 1, except that in step 2), the dried FTO conductive glass is used as the first electrode layer. Three first hole transport monolayers with a thickness of 3 nm are firstly prepared on the FTO conductive glass by magnetron sputtering as indirect contact layers, then one second hole transport monolayer with a thickness of 3 nm is prepared as an indirect contact layer, and finally one third hole transport monolayer with a thickness of 10 nm is prepared as a direct contact layer. The doping materials and ratios of each layer are the same as in Embodiment 1.

[0194] Example 22:

[0195] This embodiment is basically the same as Embodiment 1, except that in step 2), the dried FTO conductive glass is used as the first electrode layer. Three first hole transport monolayers with a thickness of 3 nm are firstly prepared on the FTO conductive glass as indirect contact layers by magnetron sputtering. Then, one second hole transport monolayer with a thickness of 3 nm is prepared as an indirect contact layer. Finally, one third hole transport monolayer with a thickness of 20 nm is prepared as a direct contact layer. The doping materials and ratios of each layer are the same as in Embodiment 1.

[0196] Example 23:

[0197] This embodiment is basically the same as embodiment 18, except that in step 2), no doped cations are introduced into the indirect contact layer, while only the doped cation Li is introduced into the indirect contact layer. + The rest is the same as in Example 18.

[0198] Example 24:

[0199] This embodiment is basically the same as Embodiment 18, except that in step 2), the dried FTO conductive glass is used as the first electrode layer. Five 3nm thick nickel oxide layers are first prepared on the FTO conductive glass using magnetron sputtering as indirect contact layers. Then, one 3nm thick nickel oxide layer is prepared as an indirect contact layer. Finally, one 5nm thick third hole transport monolayer is prepared as a direct contact layer (the direct contact layer is doped with Eu). 2+ The nickel oxide layer), and the doping ratio of the direct contact layer are the same as in Example 18.

[0200] Example 25:

[0201] This embodiment is basically the same as Embodiment 1, except that in step 2), the dried FTO conductive glass is used as the first electrode layer. Three first hole transport monolayers with a thickness of 3 nm are firstly prepared on the FTO conductive glass by magnetron sputtering as indirect contact layers, then one second hole transport monolayer with a thickness of 2 nm is prepared as an indirect contact layer, and finally one third hole transport monolayer with a thickness of 3 nm is prepared as a direct contact layer. The doping materials and ratios of each layer are the same as in Embodiment 1.

[0202] Comparative Example 1:

[0203] This comparative example is basically the same as Example 1, except that: no reducing cations or doped cations are doped in the hole transport layer; that is, when preparing the indirect contact layer, indirect contact layer and direct contact layer in the hole transport layer, nickel oxide target material is used, and no reducing cations or doped cations are doped in the target material.

[0204] Comparative Example 2:

[0205] This comparative example is basically the same as Example 1, except that: no reducing cations are doped in the hole transport layer; that is, no reducing cations are doped in the target material when preparing the indirect contact layer and the direct contact layer in the hole transport layer.

[0206] Test method:

[0207] 1) Cation type and content testing:

[0208] X-ray photoelectron spectroscopy (XPS) was used to characterize the prepared direct contact layer, indirect contact layer, and indirect contact layer. After collecting photoelectron pulse signals, an energy spectrum was plotted with photoelectron binding energy as the abscissa and relative intensity as the ordinate. After correction and fitting, the positions of peaks related to nickel ions, doped cations, and reducing cations could be determined using standard cards. The valence states of nickel ions, doped cations, and reducing cations could be confirmed (the photoelectron binding energy of elements differs under different valence states). The ratio of doped cation to nickel ion and the ratio of reducing cation to nickel ion could be obtained based on the peak intensity.

[0209] 2) Photovoltaic conversion efficiency test of perovskite solar cells:

[0210] Using a solar simulator under standard test conditions (total irradiance 100 mW / cm²) 2 The photoelectric conversion efficiency of the perovskite solar cell was tested using a Keithley 2400 series digital multimeter (AM1.5G) at a cell temperature of 25℃. The readings were recorded. The photoelectric conversion efficiency of the perovskite solar cell was calculated as follows:

[0211] PCE = P OUT / P OPT

[0212] =V OC ×J SC ×(V MPP ×J MPP ) / (V OC ×J SC )

[0213] =V OC ×J SC ×FF

[0214] Among them, P OUT P OPT V MPP (V), J MPP (mA / cm 2 V OC (V) and J SC (mA / cm 2 The values ​​are respectively the operating output power, incident light power, maximum power point voltage, maximum power point current, open circuit voltage, and short circuit current of the perovskite solar cell. OUT P OPT V MPP (V), J MPP (mA / cm 2 V OC (V) and J SC (mA / cm 2 (Obtained using a digital multimeter.)

[0215] The hole transport layer parameters and photoelectric conversion efficiency test results of the perovskite solar cells in the above embodiments and comparative examples are shown in Table 1. In Table 1, "A ion type" represents the type of reducing cation in the direct contact layer and the indirect contact layer; "A / Ni molar ratio" represents the molar ratio of reducing cation to nickel in the direct contact layer and the indirect contact layer; "B ion type" represents the type of doped cation in the indirect contact layer and the non-direct contact layer; "B / Ni molar ratio" represents the molar ratio of doped cation to nickel in the indirect contact layer and the non-direct contact layer; "normalized efficiency after 30 days of storage" is the relative efficiency of the perovskite solar cell in the initial state, that is, the efficiency of the perovskite solar cell in the initial state is taken as 100%.

[0216] Table 1

[0217]

[0218]

[0219] As shown in Table 1, the normalized photoelectric conversion efficiency of the perovskite solar cells in each embodiment of this application is relatively high after 30 days of storage compared to the initial state, indicating that the perovskite solar cells have good stability and lifespan. Furthermore, the perovskite solar cells exhibit high photoelectric conversion efficiency.

[0220] The perovskite solar cells of Comparative Examples 1 and 2 did not contain reducing cations in their hole transport layers, and their normalized efficiencies after 30 days of storage were significantly lower than those of the perovskite solar cells in the embodiments of this application. Furthermore, the perovskite solar cell of Comparative Example 2 did not contain doped cations in its hole transport layer, and its photoelectric conversion efficiency was further reduced compared to Comparative Example 1.

[0221] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0222] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims, and the specification and drawings can be used to interpret the content of the claims.

Claims

1. A perovskite solar cell, characterized in that, include: First electrode layer; A hole transport layer is disposed on one side of the first electrode layer, and the hole transport layer includes nickel oxide and reducing cations; A perovskite layer is disposed on the side of the hole transport layer opposite to the first electrode layer; as well as The second electrode layer is disposed on the side of the perovskite layer away from the hole transport layer; The reducing cation is a cation capable of reducing high-valence nickel ions, wherein the high-valence nickel ions have a valence greater than or equal to +3.

2. The perovskite solar cell according to claim 1, characterized in that, The reducing cations include lanthanide metal ions.

3. The perovskite solar cell according to claim 2, characterized in that, The lanthanide metal ions include Eu 2+ Yb 2+ 、Sm 2+ Ce 3+ 、Tb 3+ or Pr 3+ One or more of them.

4. The perovskite solar cell according to any one of claims 1 to 3, characterized in that, The concentration of reducing cations on the side of the hole transport layer away from the first electrode layer is greater than the concentration of reducing cations on the side of the hole transport layer closer to the first electrode layer.

5. The perovskite solar cell according to any one of claims 1 to 3, characterized in that, The hole transport layer also includes doped cations.

6. The perovskite solar cell according to claim 5, characterized in that, The doped cations include Li + Cs + 、Rb + Ag + Mg 2+ Ca 2+ Zn 2+ 、Sr 2+ Ba 2+ Fe 2+ Fe 3+ Co 2+ Co 3+ Cu + Eu 3+ Yb 3+ 、Sm 2+ Ce 4+ 、Tb 4+ Pr 4+ Cu 2+ or Nd 3+ One or more of them.

7. The perovskite solar cell according to any one of claims 1 to 3, characterized in that, The hole transport layer includes a direct contact layer facing the perovskite layer and a non-direct contact layer away from the perovskite layer. The direct contact layer includes nickel oxide and the reducing cation, and the non-direct contact layer includes nickel oxide.

8. The perovskite solar cell according to claim 7, characterized in that, The reducing cations are distributed in the direct contact layer in a proportion of no less than 60%.

9. The perovskite solar cell according to claim 7, characterized in that, The thickness of the direct contact layer is 0.1 nm to 20 nm.

10. The perovskite solar cell according to claim 9, characterized in that, The thickness of the direct contact layer is 0.1 nm to 10 nm.

11. The perovskite solar cell according to claim 10, characterized in that, The thickness of the direct contact layer is 2nm to 10nm.

12. The perovskite solar cell according to claim 7, characterized in that, The molar ratio of the reducing cation to nickel in the direct contact layer ranges from 0.0001 to 0.2:

1.

13. The perovskite solar cell according to claim 12, characterized in that, The molar ratio of the reducing cation to nickel in the direct contact layer ranges from 0.002 to 0.05:

1.

14. The perovskite solar cell according to claim 7, characterized in that, The hole transport layer further includes an indirect contact layer located between the direct contact layer and the indirect contact layer. The indirect contact layer includes nickel oxide and the reducing cation, or the indirect contact layer includes nickel oxide, the reducing cation, and the doped cation.

15. The perovskite solar cell according to claim 14, characterized in that, The indirect contact layer satisfies one or more of the following conditions: (1) The thickness of the indirect contact layer is 0.1 nm to 20 nm; (2) In the indirect contact layer, the molar ratio of the reducing cation to nickel is in the range of 0.0001 to 0.2:1; (3) When the indirect contact layer includes the doped cation, the molar ratio of the doped cation to nickel in the indirect contact layer is in the range of 0.0001 to 0.2:

1.

16. The perovskite solar cell according to claim 15, characterized in that, The thickness of the indirect contact layer is 0.1 nm to 10 nm.

17. The perovskite solar cell according to claim 16, characterized in that, The thickness of the indirect contact layer is 0.1 nm to 5 nm.

18. The perovskite solar cell according to claim 15, characterized in that, In the indirect contact layer, the molar ratio of the reducing cation to nickel ranges from 0.002 to 0.05:

1.

19. The perovskite solar cell according to claim 18, characterized in that, In the indirect contact layer, the molar ratio of the doped cation to nickel ranges from 0.001 to 0.1:

1.

20. The perovskite solar cell according to any one of claims 14 to 19, characterized in that, The density of each of the direct contact layer, the indirect contact layer, and the indirect contact layer is independently 1% to 100%.

21. A method for preparing a perovskite solar cell according to any one of claims 1 to 20, characterized in that, Includes the following steps: A first electrode layer, a hole transport layer, a perovskite layer, and a second electrode layer are formed by sequentially stacking them. The hole transport layer comprises nickel oxide and reducing cations.

22. The method for preparing a perovskite solar cell according to claim 21, characterized in that, The preparation of the hole transport layer includes the following steps: Multiple hole transport monolayers are sequentially prepared on the first electrode layer, and the multiple hole transport monolayers are stacked on the first electrode layer, with at least the hole transport monolayers in direct contact with the perovskite layer including the reducing cations.

23. The method for preparing a perovskite solar cell according to claim 22, characterized in that, In the hole transport monolayer near the perovskite layer, the molar ratio of the reducing cation to nickel is 0.0001 to 0.2:

1.

24. The method for preparing a perovskite solar cell according to claim 23, characterized in that, In the hole transport monolayer near the perovskite layer, the molar ratio of the reducing cation to nickel is 0.002 to 0.05:

1.

25. The method for preparing a perovskite solar cell according to claim 22, characterized in that, Each hole transport monolayer may or may not contain doped cations independently.

26. The method for preparing a perovskite solar cell according to claim 25, characterized in that, In the hole transport monolayer containing the doped cation, the molar ratio of the doped cation to nickel is 0.0001 to 0.2:

1.

27. The method for preparing a perovskite solar cell according to claim 26, characterized in that, In the hole transport monolayer containing the doped cation, the molar ratio of the doped cation to nickel is 0.001 to 0.1:

1.

28. The method for preparing a perovskite solar cell according to any one of claims 22 to 27, characterized in that, The number of layers in the hole transport layer ranges from 2 to 50.

29. The method for preparing a perovskite solar cell according to any one of claims 22 to 27, characterized in that, The thickness of each hole transport monolayer is 0.1 nm to 20 nm.

30. A photovoltaic module, characterized in that, This includes the perovskite solar cell according to any one of claims 1 to 20 or the perovskite solar cell prepared by the preparation method according to any one of claims 21 to 29.

31. A photovoltaic system, characterized in that, Includes the photovoltaic module as described in claim 30.

32. An electrical appliance, characterized in that, Including the photovoltaic system as described in claim 31.

33. A power generation device, characterized in that, Including the photovoltaic system as described in claim 31.

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