Single crystal silicon reaction furnace for new energy automobile production

Abstract

The application discloses a single crystal silicon reaction furnace for new energy automobile production, which comprises a reaction furnace, a crystal lifter fixedly installed on the top of the reaction furnace and a second feeding pipe fixedly connected to the outer surface of the reaction furnace; further comprising a drying mechanism for drying single crystal silicon raw materials; the drying mechanism comprises a heat preservation cover fixedly installed on the outer surface of the reaction furnace, a second water pipe fixedly connected to the top of the heat preservation cover, a purification tank fixedly connected to one end of the second water pipe, the purification tank being in through connection with the inner cavity of the reaction furnace, a first heat preservation pipe fixedly connected to the top of the purification tank and a second heat preservation pipe fixedly installed on the outer surface of the first heat preservation pipe; by opening the valve, the single crystal silicon raw materials in the inner cavity of the cleaning bucket flow into the feeding hopper and then into the inner cavities of the third feeding pipe and the second feeding pipe, and finally are rotated by the auger driven by the first motor output shaft, so that the single crystal silicon raw materials are conveyed into the inner cavity of the reaction furnace and are heated again when passing through the inner cavity of the second feeding pipe.

Description

Technical Field

[0001] This invention relates to the field of monocrystalline silicon production technology, specifically to a monocrystalline silicon reactor for the production of new energy vehicles. Background Technology

[0002] The production of monocrystalline silicon for new energy vehicles is developing in three major directions: larger size, lower defect rate (automotive-grade yield >65%), and recycling. The core lies in balancing the needs of quality, cost and sustainability through collaborative innovation in thermal field design, doping process and waste technology, so as to support the high-efficiency evolution of electronic control systems and photovoltaic modules.

[0003] A search revealed that patent document CN118292093A discloses a single-crystal silicon rod production furnace and production method, which includes a support column, an auxiliary furnace chamber, and two main furnace chambers. The auxiliary furnace chamber is connected to the support column and is configured to rotate around the support column. The two main furnace chambers are arranged around the support column. The auxiliary furnace chamber is configured to alternately connect with different main furnace chambers in a cyclic manner. The above-mentioned single-crystal silicon rod production furnace and production method can efficiently produce high-quality single-crystal silicon rods.

[0004] In practical use, by setting up two main furnace chambers that are connected to an auxiliary furnace chamber, and performing preparatory work such as cleaning, filling and melting when the auxiliary furnace chamber is connected to one of the main furnace chambers to produce monocrystalline silicon rods, the production time of monocrystalline silicon rods is effectively utilized. This allows one auxiliary furnace chamber and one control system to alternately connect to the two main furnace chambers to continuously produce monocrystalline silicon rods, thereby significantly improving the production speed. However, if the monocrystalline silicon is directly fed into the reactor after cleaning without drying, the heating time of the monocrystalline silicon in the reactor will be increased.

[0005] Therefore, a monocrystalline silicon reactor for the production of new energy vehicles is proposed to address the above issues. Summary of the Invention

[0006] To overcome the shortcomings of existing technologies and solve the problem that the cleaning solution used to react the surface of monocrystalline silicon directly in the reactor after cleaning increases the time the monocrystalline silicon spends in the reactor, this invention proposes a monocrystalline silicon reactor for the production of new energy vehicles.

[0007] A single-crystal silicon reactor for the production of new energy vehicles includes a reactor, a crystal lifter fixedly installed on the top of the reactor, and a second feed pipe fixedly connected to the outer surface of the reactor. It also includes a drying mechanism for drying the monocrystalline silicon raw material; The drying mechanism includes a heat insulation cover, which is fixedly installed on the outer surface of the reactor. A second water pipe is fixedly connected to the top of the heat insulation cover, and a purification box is fixedly connected to one end of the second water pipe. The purification box is connected to the inner cavity of the reactor. A first heat insulation pipe is fixedly connected to the top of the purification box, and a second heat insulation pipe is fixedly installed on the outer surface of the first heat insulation pipe. One end of the second heat insulation pipe is fixedly connected to the outer surface of the second feed pipe.

[0008] Preferably, a first feed pipe is fixedly connected to the outer surface of the reactor, a valve is fixedly connected to the outer surface of the first feed pipe, the first feed pipe is fixedly connected to a second feed pipe, a first motor is fixedly connected to the outer surface of the second feed pipe, an auger is fixedly connected to the output shaft of the first motor, and the auger is rotatably installed in the inner cavity of the second feed pipe.

[0009] Preferably, a third feed pipe is fixedly connected to the outer surface of the second feed pipe, and an ultrasonic cleaner is fixedly installed on the outer surface of the third feed pipe. A first filter box is fixedly connected to one side of the ultrasonic cleaner, a first water pump is fixedly connected to one side of the first filter box, a first water pipe is fixedly connected to the top of the first water pump, one end of the first water pipe passes through the inner cavity of the ultrasonic cleaner and is fixedly connected to a nozzle, a second electric telescopic rod is fixedly installed on one side of the ultrasonic cleaner, and a push plate is fixedly connected to the output end of the second electric telescopic rod.

[0010] Preferably, two first electric telescopic rods are fixedly installed on the top of the ultrasonic cleaner, and the output ends of the two first electric telescopic rods are rotatably connected to the cleaning hopper. One end of the third feed pipe passes through the inner cavity of the ultrasonic cleaner and is fixedly connected to the feed hopper.

[0011] Preferably, a threaded rod is rotatably installed in the inner cavity of the ultrasonic cleaner, and a telescopic baffle is slidably installed in the inner cavity of the ultrasonic cleaner. The threaded rod is threadedly connected to the telescopic baffle, and a second motor is fixedly connected to one end of the threaded rod. The second motor is fixedly installed on one side of the ultrasonic cleaner.

[0012] Preferably, one end of the first heat-insulating pipe extends into the inner cavity of the ultrasonic cleaner, a heat insulation plate is fixedly installed on the outer surface of the first heat-insulating pipe, a third motor is fixedly installed on one side of the heat insulation plate, and the output shaft of the third motor extends into the inner cavity of the first heat-insulating pipe and is fixedly connected to a fan blade.

[0013] Preferably, a second filter box is fixedly connected to the bottom of the purification box, and the second filter box is fixedly installed on one side of the heat insulation cover, with the purification box and the inner cavity of the heat insulation cover communicating with each other.

[0014] Preferably, a second water pump is fixedly connected to the top of the second water pipe, the second water pump is fixedly installed on one side of the purification tank, and a crucible is movably installed inside the reaction furnace cavity.

[0015] The advantages of this invention are: 1. This invention heats monocrystalline silicon raw materials in a reactor. During heating, the heat from the outer surface of the reactor heats the water inside the insulation cover. Simultaneously, the output shaft of the third motor drives the fan blades to draw the hot air from the reactor cavity into the purification chamber. The second water pump draws the hot water from the insulation cover and sprays it out through the nozzle. The hot air passes through the gap between the three guide plates, and the hot water sprayed from the nozzle also flows through the three guide plates. During this process, impurities in the hot air are absorbed by the water, separating the hot air from the impurities. Finally, the impurities and water flow into the second filter box. The hot water enters the insulation cover cavity through the second filter box to achieve circulation, while the impurities are left in the second filter box cavity. The hot air enters the first and second insulation pipe cavities through the purification box.

[0016] 2. This invention uses an ultrasonic cleaner to clean monocrystalline silicon raw materials. After cleaning, the first electric telescopic rod lifts the cleaning bucket to drain the water. At the same time, the output shaft of the second motor drives the threaded rod to rotate, causing the telescopic baffle to divide the ultrasonic cleaner into two layers. The hot air entering the inner cavity of the ultrasonic cleaner through the first heat preservation pipe can heat and dry the monocrystalline silicon raw materials. The telescopic baffle does not completely divide the ultrasonic cleaner into two spaces, so the water flowing down from the inner cavity of the cleaning bucket can also flow to the bottom of the ultrasonic cleaner.

[0017] 3. In this invention, the output end of the second electric telescopic rod extends to push the bottom of the cleaning hopper with the push plate, aligning the bottom of the cleaning hopper with the feeding hopper. The valve is then opened, allowing the monocrystalline silicon raw material to enter the feeding hopper and be carried to the inner cavity of the reactor through the third and second feeding pipes. During this process, the second insulation pipe supplies hot gas to the inner cavity of the second feeding pipe, which can further heat and insulate the monocrystalline silicon raw material, reducing the subsequent melting time of the monocrystalline silicon raw material. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the overall structure of one embodiment of the present invention; Figure 2 This is a schematic diagram of a nozzle mounting structure according to an embodiment of the present invention; Figure 3 This is a schematic diagram of the telescopic baffle installation structure according to an embodiment of the present invention; Figure 4This is a schematic diagram of the cleaning bucket installation structure according to an embodiment of the present invention; Figure 5 This is a schematic cross-sectional view of a purification box according to an embodiment of the present invention; Figure 6 This is a schematic cross-sectional view of a reactor according to an embodiment of the present invention.

[0020] In the diagram: 1. Reactor; 101. Crucible; 11. Crystal Elevator; 2. First Feed Pipe; 21. Valve; 22. Second Feed Pipe; 23. Third Feed Pipe; 231. Feed Hopper; 232. First Motor; 24. Ultrasonic Cleaner; 25. First Filter Box; 251. First Water Pump; 252. First Water Pipe; 253. Nozzle; 26. First Electric Telescopic Rod; 261. Cleaning Bucket; 27. Threaded Rod; 271. Telescopic Baffle; 272. Second Motor; 28. Second Electric Telescopic Rod; 3. Purification Box; 31. First Insulation Pipe; 311. Second Insulation Pipe; 32. Heat Insulation Board; 33. Third Motor; 34. Guide Plate; 35. Second Filter Box; 4. Insulation Cover; 41. Second Water Pipe; 42. Second Water Pump. Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] Please see Figures 1 to 6 As shown, a monocrystalline silicon reactor for new energy vehicle production includes a reactor 1, a crystal elevator 11 fixedly installed on the top of the reactor 1, and a second feed pipe 22 fixedly connected to the outer surface of the reactor 1; it also includes a drying mechanism for drying monocrystalline silicon raw materials; the drying mechanism includes a heat insulation cover 4, which is fixedly installed on the outer surface of the reactor 1, and a second water pipe 41 fixedly connected to the top of the heat insulation cover 4. One end of the second water pipe 41 is fixedly connected to a purification box 3, which is connected to the inner cavity of the reactor 1. A first heat insulation pipe 31 is fixedly connected to the top of the purification box 3, and a second heat insulation pipe 311 is fixedly installed on the outer surface of the first heat insulation pipe 31. One end of the second heat insulation pipe 311 is fixedly connected to the outer surface of the second feed pipe 22.

[0023] Existing monocrystalline silicon reactors require the surface of the monocrystalline silicon raw material to be cleaned before use. After cleaning, the monocrystalline silicon raw material is placed directly into the reactor cavity. The moisture left on the surface of the monocrystalline silicon raw material after cleaning will evaporate at high temperature in the reactor. However, the process of evaporating the moisture increases the heating time of the monocrystalline silicon.

[0024] In use, the monocrystalline silicon raw material is first cleaned. After cleaning, the monocrystalline silicon raw material enters the inner cavity of the reactor 1 through the second feed pipe 22. During this process, the reactor 1 heats the monocrystalline silicon raw material that has entered the inner cavity of the reactor 1 to melt it. During the heating process, hot gas enters the inner cavity of the purification box 3 and the second heat preservation pipe 311 from the reactor 1, and then enters the inner cavity of the second feed pipe 22. The second feed pipe 22 contains the monocrystalline silicon raw material waiting to be heated. The hot gas entering the inner cavity of the second feed pipe 22 can preheat and dry the monocrystalline silicon raw material in the inner cavity of the second feed pipe 22, so that the monocrystalline silicon raw material can be quickly heated and melted when it enters the inner cavity of the reactor 1. After the monocrystalline silicon raw material melts, the crystal lifter 11 lifts the melted monocrystalline silicon raw material with the seed crystal to form a monocrystalline silicon column.

[0025] Furthermore, such as Figure 2 Of Figure 4 As shown, a first feed pipe 2 is fixedly connected to the outer surface of the reactor 1, a valve 21 is fixedly connected to the outer surface of the first feed pipe 2, the first feed pipe 2 is fixedly connected to a second feed pipe 22, a first motor 232 is fixedly connected to the outer surface of the second feed pipe 22, and an auger is fixedly connected to the output shaft of the first motor 232. The auger is rotatably installed inside the second feed pipe 22. A third feed pipe 23 is fixedly connected to the outer surface of the second feed pipe 22. An ultrasonic cleaner 24 is fixedly installed on the outer surface of the third feed pipe 23. A first filter box 25 is fixedly connected to one side of the ultrasonic cleaner 24. A first water pump 251 is fixedly connected to one side of the first filter box 25. A first water pipe 252 is fixedly connected to the top of the first water pump 251. One end of the first water pipe 252 passes through the inner cavity of the ultrasonic cleaner 24 and is fixedly connected to a nozzle 253. A second electric telescopic rod 28 is fixedly installed on one side of the ultrasonic cleaner 24. A push plate is fixedly connected to the output end of the second electric telescopic rod 28. Two first electric telescopic rods 26 are fixedly installed on the top of the ultrasonic cleaner 24. The output ends of the two first electric telescopic rods 26 are rotatably connected to the cleaning bucket 261. One end of the third feed pipe 23 passes through the inner cavity of the ultrasonic cleaner 24 and is fixedly connected to the feed bucket 231. The ultrasonic cleaner 24 has a threaded rod 27 rotatably installed inside its cavity, and a telescopic baffle 271 slidably installed inside its cavity. The threaded rod 27 is threadedly connected to the telescopic baffle 271. A second motor 272 is fixedly connected to one end of the threaded rod 27, and the second motor 272 is fixedly installed on one side of the ultrasonic cleaner 24.

[0026] In use, the monocrystalline silicon raw material is first placed in the cleaning bucket 261 inside the ultrasonic cleaner 24. The ultrasonic cleaner 24 can clean the monocrystalline silicon raw material. After cleaning, the cleaning bucket 261 is lifted by two first electric telescopic rods 26. This allows the monocrystalline silicon raw material to drain water and makes the cleaning bucket 261 higher than the telescopic baffle 271. At this time, the output shaft of the second motor 272 drives the threaded rod 27 to rotate, which drives the telescopic baffle 271 to slide, so that the telescopic baffle 271 divides the ultrasonic cleaner 24 into upper and lower layers. Then, hot air is delivered to the top of the ultrasonic cleaner 24 through the first heat preservation pipe 31 to preheat and dry the monocrystalline silicon raw material. When it is necessary to add monocrystalline silicon raw material into the inner cavity of reactor 1, the output end of the second electric telescopic rod 28 moves the push plate. The push plate contacts the surface of the cleaning hopper 261 and pushes the cleaning hopper 261 to tilt towards the feed hopper 231. There is a valve at the bottom of the cleaning hopper 261. After the bottom of the cleaning hopper 261 is aligned with the top of the feed hopper 231, the valve opens and the monocrystalline silicon raw material in the inner cavity of the cleaning hopper 261 flows into the feed hopper 231 and enters the inner cavity of the third feed pipe 23 and the second feed pipe 22. Finally, the output shaft of the first motor 232 drives the auger to rotate and transport the monocrystalline silicon raw material to the inner cavity of reactor 1. The monocrystalline silicon raw material will be reheated when it passes through the inner cavity of the second feed pipe 22.

[0027] Furthermore, such as Figure 4 and Figure 5 As shown, one end of the first heat insulation pipe 31 extends into the inner cavity of the ultrasonic cleaner 24. A heat insulation plate 32 is fixedly installed on the outer surface of the first heat insulation pipe 31. A third motor 33 is fixedly installed on one side of the heat insulation plate 32. The output shaft of the third motor 33 extends into the inner cavity of the first heat insulation pipe 31 and is fixedly connected to a fan blade. The bottom of the purification box 3 is fixedly connected to a second filter box 35, which is fixedly installed on one side of the heat insulation cover 4. The inner cavities of the purification box 3 and the heat insulation cover 4 are interconnected.

[0028] In use, the second water pump 42 extends through the top into the inner cavity of the purification tank 3 and is fixedly connected to a nozzle. When the reactor 1 is working, the outer surface of the reactor 1 also releases a large amount of heat. The heat released by the reactor 1 is wrapped by the heat insulation cover 4. By having a large amount of water between the reactor 1 and the heat insulation cover 4, the water can be heated. The heated water is pumped into the inner cavity of the purification tank 3 by the second water pump 42 through the second water pipe 41 and released by the nozzle. At the same time, the hot air in the inner cavity of the reactor 1 is drawn out into the inner cavity of the purification tank 3 by the output shaft of the third motor 33, which drives the fan blades to rotate. The water flows from the inner cavity of the first insulation pipe 31 to the inner cavity of the first insulation pipe 31. When the hot air passes through the inner cavity of the purification box 3, small particles of monocrystalline silicon raw material are mixed in the air due to high temperature melting. The nozzle can contact the impurities and separate the impurities from the hot air. The three guide plates 34 can increase the flow path of the hot air in the inner cavity of the purification box 3, thereby increasing the probability of water contacting impurities. Finally, the water with impurities flows back into the inner cavity of the insulation cover 4 after being filtered by the second filter box 35. Heating the water in the inner cavity of the insulation cover 4 by the reactor 1 can prevent the water from absorbing heat from the hot air, thereby achieving the purpose of recycling the water in the inner cavity of the insulation cover 4.

[0029] Furthermore, such as Figure 6 As shown, a second water pump 42 is fixedly connected to the top of the second water pipe 41. The second water pump 42 is fixedly installed on one side of the purification box 3. A crucible 101 is movably installed inside the reactor 1.

[0030] In use, the monocrystalline silicon raw material enters the inner cavity of the crucible 101 through the second feed pipe 22, and is then heated and melted in the inner cavity of the crucible 101 to finally form monocrystalline silicon.

[0031] Working principle: In use, the single-crystal silicon raw material is heated by the reactor 1. During heating, the heat on the outer surface of the reactor 1 heats the water in the inner cavity of the insulation cover 4. At the same time, the output shaft of the third motor 33 drives the fan blades to rotate, which can draw the hot air in the inner cavity of the reactor 1 to the inner cavity of the purification box 3. The hot water in the inner cavity of the insulation cover 4 is drawn out by the second water pump 42 and sprayed out through the nozzle. The hot air passes through the gap between the three guide plates 34, and the hot water sprayed from the nozzle also flows through the three guide plates 34. During this process, impurities in the hot air are absorbed by the water, separating the hot air from the impurities. Finally, the impurities and water flow into the second filter box 35. The hot water enters the inner cavity of the insulation cover 4 through the second filter box 35 to achieve circulation, while the impurities are left in the inner cavity of the second filter box 35. The hot air enters the inner cavity of the first insulation pipe 31 and the second insulation pipe 311 through the purification box 3.

[0032] First, the monocrystalline silicon raw material is placed inside the cleaning tank 261. The ultrasonic cleaner 24 cleans the raw material. After cleaning, the first electric telescopic rod 26 lifts the cleaning tank 261 to drain the water. Simultaneously, the output shaft of the second motor 272 drives the threaded rod 27 to rotate, causing the telescopic baffle 271 to divide the ultrasonic cleaner 24 into two layers. Hot air entering the inner cavity of the ultrasonic cleaner 24 through the first insulation pipe 31 heats and dries the monocrystalline silicon raw material. However, the telescopic baffle 271 does not completely divide the ultrasonic cleaner 24 into two spaces, therefore... The water flowing down from the inner cavity of 261 can also flow to the bottom of the ultrasonic cleaner 24. After drying, the output end of the second electric telescopic rod 28 extends to push the bottom of the cleaning bucket 261, so that the bottom of the cleaning bucket 261 is aligned with the feed bucket 231. The valve is opened, and the monocrystalline silicon raw material enters the feed bucket 231 and is carried to the inner cavity of the reactor 1 through the third feed pipe 23 and the second feed pipe 22. During this process, the second heat preservation pipe 311 delivers hot air to the inner cavity of the second feed pipe 22 to further heat and preserve the monocrystalline silicon raw material, reducing the time required for subsequent melting of the monocrystalline silicon raw material.

[0033] Since the structure of the crystal lifter 11 lifting the molten single-crystal silicon raw material with the seed crystal to form a single-crystal silicon pillar is existing technology, it is not described in this invention document.

[0034] In the description of this specification, references to terms such as "an embodiment," "example," "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0035] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed invention.

Claims

1. A single-crystal silicon reactor for the production of new energy vehicles, comprising a reactor (1), wherein a crystal lifter (11) is fixedly installed on the top of the reactor (1), and a second feed pipe (22) is fixedly connected to the outer surface of the reactor (1). It also includes a drying mechanism for drying the monocrystalline silicon raw material; Its features are: The drying mechanism includes a heat insulation cover (4), which is fixedly installed on the outer surface of the reactor (1). A second water pipe (41) is fixedly connected to the top of the heat insulation cover (4). A purification box (3) is fixedly connected to one end of the second water pipe (41). The purification box (3) is connected to the inner cavity of the reactor (1). A first heat insulation pipe (31) is fixedly connected to the top of the purification box (3). A second heat insulation pipe (311) is fixedly installed on the outer surface of the first heat insulation pipe (31). One end of the second heat insulation pipe (311) is fixedly connected to the outer surface of the second feed pipe (22). The reactor (1) is fixedly connected to a first feed pipe (2) on its outer surface. A valve (21) is fixedly connected to the outer surface of the first feed pipe (2). The first feed pipe (2) is fixedly connected to a second feed pipe (22). A first motor (232) is fixedly connected to the outer surface of the second feed pipe (22). An auger is fixedly connected to the output shaft of the first motor (232). The auger is rotatably installed in the inner cavity of the second feed pipe (22). A third feed pipe (23) is fixedly connected to the outer surface of the second feed pipe (22). An ultrasonic cleaner (24) is fixedly installed on the outer surface of the third feed pipe (23). A first filter box (25) is fixedly connected to one side of the ultrasonic cleaner (24). A first water pump (251) is fixedly connected to one side of the first filter box (25). A first water pipe (252) is fixedly connected to the top of the first water pump (251). One end of the first water pipe (252) passes through the inner cavity of the ultrasonic cleaner (24) and is fixedly connected to a nozzle (253). A second electric telescopic rod (28) is fixedly installed on one side of the ultrasonic cleaner (24). A push plate is fixedly connected to the output end of the second electric telescopic rod (28). The ultrasonic cleaner (24) has two first electric telescopic rods (26) fixedly installed on the top. The output ends of the two first electric telescopic rods (26) are rotatably connected to the cleaning bucket (261). One end of the third feed pipe (23) passes through the inner cavity of the ultrasonic cleaner (24) and is fixedly connected to the feed bucket (231). The ultrasonic cleaner (24) has a threaded rod (27) rotatably installed in its inner cavity, and a telescopic baffle (271) slidably installed in its inner cavity. The threaded rod (27) is threadedly connected to the telescopic baffle (271), and a second motor (272) is fixedly connected to one end of the threaded rod (27). The second motor (272) is fixedly installed on one side of the ultrasonic cleaner (24). One end of the first heat insulation pipe (31) extends into the inner cavity of the ultrasonic cleaner (24). A heat insulation plate (32) is fixedly installed on the outer surface of the first heat insulation pipe (31). A third motor (33) is fixedly installed on one side of the heat insulation plate (32). The output shaft of the third motor (33) extends into the inner cavity of the first heat insulation pipe (31) and is fixedly connected to a fan blade. The bottom of the purification box (3) is fixedly connected to a second filter box (35), and the second filter box (35) is fixedly installed on one side of the heat insulation cover (4). The inner cavities of the purification box (3) and the heat insulation cover (4) are connected. The second water pipe (41) is fixedly connected to the top of the second water pump (42), and the second water pump (42) is fixedly installed on one side of the purification box (3). The crucible (101) is movably installed in the inner cavity of the reactor (1).

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