一种基于E面T型结的波导功率合成器
By using an E-plane T-junction waveguide power combiner, combined with multi-stage E-plane T-junction one-to-two rectangular waveguide units and Chebyshev gradient waveguide transition structure, the problems of broadband matching and insufficient power capacity of planar power combiners are solved, achieving high isolation, low insertion loss and high efficiency power combining.
CN120637840BActive Publication Date: 2026-07-17SHANGHAI JIAOTONG UNIV +1
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI JIAOTONG UNIV
- Filing Date
- 2025-07-07
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing planar power combiners cannot simultaneously meet the requirements of broadband matching, low reflection, low insertion loss, high efficiency, and high power capacity.
Method used
A waveguide power combiner based on an E-plane T-junction is adopted, which utilizes a multi-level E-plane T-junction one-to-two rectangular waveguide unit structure and a Chebyshev graded waveguide transition structure, combined with discrete thin-film resistors, to achieve broadband matching and high isolation.
Benefits of technology
It achieves high isolation characteristics while reducing insertion loss, improving power combining efficiency, enhancing power capacity, and maintaining good matching over a wide bandwidth.
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Figure CN120637840B_ABST
Abstract
本发明涉及一种基于E面T型结的波导功率合成器，包括多级基于离散薄膜电阻的E面T型一分二矩形波导单元结构，一分二矩形波导单元结构级间采用切比雪夫渐变波导过渡结构，其中，对于任一个E面T型一分二矩形波导单元结构，均包括：陶瓷基片，位于矩形波导内；一对渐变金属隔板，分别位于所述陶瓷基片的两个面，将所述矩形波导的一端分为两个E面半高度标准波导，并渐变至所述矩形波导内部，形成T型结构，所述陶瓷基片上未被渐变金属隔板覆盖的部分分布设置有多个离散薄膜电阻。与现有技术相比，本发明可以在8.2～12GHz实现功率合成效率91％以上，回波损耗‑20dB以下，各端口隔离度‑19.5dB以下。
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