Water-soluble indium phosphide quantum dot as well as preparation method and application thereof

Abstract

The invention relates to the technical field of nano materials, in particular to a water-soluble indium phosphide quantum dot as well as a preparation method and application thereof, in particular to application in biological imaging, display devices or photovoltaic devices. The growth process of the zinc selenide / aluminum double-shell layer is regulated and controlled by introducing fluorine ions, so that the surface defects of the indium phosphide core are reduced, and the uniform epitaxial growth of the zinc selenide and aluminum shell layer is promoted. Fluorine ions are strongly combined with indium, zinc and aluminum atom sites in the whole core-shell structure, and a more efficient defect passivation mechanism is provided, so that the luminescence property and the stability of the indium phosphide quantum dots are remarkably improved. The fluorescence quantum yield of the indium phosphide / zinc selenide quantum dots is increased from less than 50% to more than 80% through the fluorine ion mediated zinc selenide / aluminum shell layer growth treatment. The fluorescence quantum yield of the water-soluble indium phosphide quantum dot is close to the level of an oil-phase quantum dot, and is the highest record in indium phosphide quantum dots synthesized by adopting a safe phosphorus source (such as tri (dimethylamino) phosphine) at present.

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