Atomic beam tube device and atomic beam clock system

Abstract

This disclosure provides an atomic beam tube device and an atomic beam clock system. The atomic beam tube device of this disclosure comprises a closed cavity structure formed by stacked first, second, and third base layers. The closed cavity structure includes a beam source region, a collimation channel, and a beam drift region connected sequentially. The first and third base layers are glass layers, and the second base layer is a silicon layer. The atomic beam tube device of this disclosure avoids reverse voltage debonding at the silicon-glass interface, achieving high airtightness of the microvacuum cavity and improving the stability of the atomic beam tube.

Description

Technical Field

[0001] This disclosure relates to the field of vacuum electronic devices, and in particular to an atomic beam tube device and an atomic beam clock system. Background Technology

[0002] An atomic clock is an advanced clock that uses atomic resonance frequency standards to calculate and maintain accurate time. It is the most accurate time measurement and frequency standard known in the world and serves as the international benchmark for time and frequency conversion. It is widely used in positioning, navigation, time synchronization (PNT), and communication.

[0003] There are many types of atomic clocks. Traditional microwave atomic clocks have moderate accuracy, with a frequency stability of up to 10 on the order of seconds. -12 The above are mainly used for timekeeping / synchronization of PNT master nodes; large-volume optical atomic clocks have high precision and are mainly aimed at the forefront of science, challenging the limits of physical measurement and addressing the next generation of second definition problems. However, with the improvement of communication speed and the development of inertial navigation and quantum sensing networks, the demand for miniaturized, integrated, low-power chip-level atomic clocks is constantly increasing. Applications such as satellite gravity detection, mobile communication, underwater navigation, and drone swarms all require atomic clocks with sufficiently low power consumption and small physical size, which the aforementioned atomic clocks cannot meet.

[0004] Coherent population trapping (CPT) atomic clocks are a hot research topic in the field of miniature atomic clocks. Because they do not require the microwave cavity used in traditional atomic clocks and their size is not limited by microwave wavelength, the core components of CPT atomic clocks are implemented using microelectromechanical systems (MEMS) technology, enabling the atomic clock to be chip-based. CPT chip clocks have been commercialized, largely solving the application needs of quantum precision measurement. However, in principle, the long-term stability of CPT atomic clocks is far inferior to their short-term stability. Within 1000 seconds, a CPT chip clock can achieve 10... -10 -10 -11 While the frequency stability is good, it tends to become unstable after 1000 seconds due to ambient temperature drift, changes in illumination, and other systematic factors, and the average monthly frequency stability will decrease by 1-2 orders of magnitude.

[0005] In related technologies, the physical core of miniaturized microwave atomic clocks typically employs a five-layer atomic beam tube fabricated at the chip level, such as... Figure 1 As shown, the key to chip-level fabrication of atomic beam tubes lies in transforming the three-dimensional structure into a two-and-a-half-dimensional structure compatible with MEMS processes, based on proportional size reduction. However, the second-level frequency stability of this miniaturized microwave atomic clock is only 1.2 × 10⁻⁶. -9 However, it did not meet expectations.

[0006] Therefore, an atomic bundle tube and atomic number clock system with high airtightness is needed. Summary of the Invention

[0007] To address at least one of the aforementioned problems, this disclosure provides an atomic beam tube device, which comprises a closed cavity structure formed by stacked first, second, and third layers.

[0008] The closed cavity structure includes a beam source region, a collimation channel, and a beam drift region connected in sequence, and

[0009] The first and third base layers are glass layers, and the second base layer is a silicon layer.

[0010] Optionally, the second base layer includes: a first through hole, a second through hole, and a first isolation zone disposed between the first through hole and the second through hole.

[0011] At least one primary passage is set up on the side of the first isolation zone closest to the third level.

[0012] The first channel connects the first through hole and the second through hole.

[0013] Optionally, the surface of the first base layer adjacent to the second base layer is a plane excluding openings.

[0014] The third base layer includes: a first slot, a second slot, and a second isolation zone disposed between the first slot and the second slot.

[0015] The first slot is set to correspond to the first through hole, the second slot is set to correspond to the second through hole, and the second isolation zone covers the first isolation zone.

[0016] Optionally, the orthographic projection of the first through hole on the first base layer overlaps with the orthographic projection of the first slot on the first base layer.

[0017] The orthographic projection of the second through hole on the first base layer overlaps with the orthographic projection of the second slot on the first base layer.

[0018] Optionally, the second base layer includes multiple first channels, wherein the cross-section of the first channel in the direction perpendicular to the first base layer is square.

[0019] Multiple first channels are arranged symmetrically with respect to a first axis, which extends along the direction from the first through hole to the second through hole, and each of the first through hole and the second through hole is a symmetrical hole symmetrical with respect to the first axis.

[0020] Optionally, the depth of the first slot and the second slot is h1, the depth of the first channel is h2, and the thickness of the second base layer is h3, where h3 = h1 + h2.

[0021] Optionally, the first and second base layers are bonded together, and the second and third base layers are bonded together; and / or

[0022] The length of the beam drift region in the direction away from the collimation channel is greater than or equal to 15 mm and less than or equal to 20 mm.

[0023] Optionally, the second through-hole includes two first opening regions defined by the first defining region and two second opening regions defined by the second defining region.

[0024] Two first opening regions are symmetrically arranged with respect to the first axis, and two second opening regions are symmetrically arranged with respect to the first axis.

[0025] Optionally, a first alkali metal adsorbent is provided in the first opening region, and a getter is provided in the second opening region.

[0026] A second alkali metal adsorbent is placed between the getter and the sidewall of the second base layer away from the beam source region.

[0027] A second aspect of this disclosure provides an atomic beam clock system, including the atomic beam tube device as described above.

[0028] The beneficial effects of this disclosure are as follows:

[0029] This disclosure addresses existing problems by providing an atomic beam tube device and an atomic beam clock system. By providing a closed cavity structure composed of three stacked base layers, with the second base layer being a silicon layer, the atomic beam tube device eliminates the silicon-glass-silicon stacked structure, avoiding reverse voltage debonding at the interface during fabrication. This significantly improves the hermeticity and frequency stability of the atomic beam device, and has broad application prospects. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 A schematic diagram of an atomic beam tube device in the related technology is shown;

[0032] Figure 2 A schematic exploded view of an atomic beam tube device according to an embodiment of the present disclosure is shown;

[0033] Figure 3 A schematic cross-sectional view of an atomic beam tube device according to an embodiment of the present disclosure is shown;

[0034] Figure 4A schematic top view of a first base layer in an atomic beam tube device according to an embodiment of the present disclosure is shown;

[0035] Figure 5 A schematic top view of a second base layer in an atomic beam tube device according to an embodiment of the present disclosure is shown;

[0036] Figure 6 The first isolation region in the second base layer of an atomic beam tube device according to an embodiment of the present disclosure is shown along... Figure 3 A schematic diagram of a cross-section taken along the Z direction;

[0037] Figure 7 A top view of at least a portion of the first isolation region in the second base layer of an atomic beam tube device according to another embodiment of the present disclosure is shown;

[0038] Figure 8 A schematic top view of an atomic beam tube device according to an embodiment of the present disclosure is shown;

[0039] Figure 9 A schematic top view of a third layer in an atomic beam tube device according to an embodiment of the present disclosure is shown;

[0040] Figure 10 A schematic cross-sectional view of a third layer in an atomic beam tube device according to an embodiment of the present disclosure is shown;

[0041] Figure 11 The edge of the atomic beam tube device shown in the embodiment of this disclosure Figure 3 A schematic diagram of a cross-section taken along the Z direction. Detailed Implementation

[0042] To more clearly illustrate this disclosure, the preferred embodiments and accompanying drawings will be used for further description. Similar components in the drawings are indicated by the same reference numerals. Those skilled in the art should understand that the specific description below is illustrative rather than restrictive and should not be construed as limiting the scope of protection of this disclosure.

[0043] It should be noted that, unless otherwise defined, the technical or scientific terms used in this disclosure should have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms "first," "second," and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms "an," "a," or "the," etc., do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms "comprising," "including," etc., mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. The terms "connected," "linked," etc., are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect.

[0044] In this disclosure, "electrical connection" includes the situation where constituent elements are connected together by a component having a certain electrical function. There are no particular limitations on the "component having a certain electrical function," as long as it enables the transmission and reception of electrical signals between the connected constituent elements. Examples of "component having a certain electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other components with various functions.

[0045] As used in this disclosure, "parallel," "perpendicular," and "equal" include the described situation and situations that are similar to the described situation, within an acceptable deviation range, which is determined by those skilled in the art taking into account the measurement under discussion and the error associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "equal" includes absolute equality and approximate equality, wherein an acceptable deviation range for approximate equality may be, for example, a difference between the two equal items being less than or equal to 5% of either one.

[0046] The inventors' analysis revealed that in the relevant technical structure, various regions of the atomic beam tube are achieved through photolithography and etching. The atomic beam tube comprises at least five layers, with adjacent layers using different materials to increase strength. The top and bottom layers are flat plates, and each of the multiple intermediate film layers is a through-hole sheet. This method, because it only requires consideration of the location and shape of the openings, is a conventional choice for chip-scale atomic beam tube fabrication. Figure 1The device shown comprises, in sequence, a glass layer 11, a silicon layer 12, a glass layer 13, a silicon layer 14, and a glass layer 15. Except for glass layers 11 and 15, which are planar structures, each of the intermediate layers has a through-pattern. This complex five-layer structure has four bonding interfaces, which inevitably involve a silicon-glass-silicon encapsulation structure. From a process perspective, bonding is the formation of a strong bond under certain temperature and voltage conditions. The silicon-glass-silicon structure means that while one silicon-glass interface is bonding under a directional voltage, the other silicon-glass interface is in a reverse voltage debonding state. This results in interface separation due to reverse voltage debonding, affecting the hermeticity of the final microcavity structure. Furthermore, the more film layers there are, the higher the leakage rate at the bonding interfaces.

[0047] Therefore, current MEMS-based atomic bundle tube structures have poor airtightness, unstable internal environment, and poor frequency stability.

[0048] In view of this, the present disclosure provides an atomic beam tube device, which comprises a closed cavity structure formed by stacked first, second, and third layers. The closed cavity structure includes a beam source region, a collimation channel, and a beam drift region connected sequentially.

[0049] The first and third base layers are glass layers, and the second base layer is a silicon layer.

[0050] In this embodiment, by providing a closed cavity structure composed of three stacked base layers, with the second base layer being a silicon layer, the atomic beam tube device does not have a silicon-glass-silicon stacked structure, thus avoiding the reverse voltage debonding state at the interface during the fabrication process, and significantly improving the airtightness and frequency stability of the atomic beam device.

[0051] In a specific example, refer to Figure 2 and Figure 3 As shown, the atomic beam tube device 2 includes a first base layer 21, a second base layer 22, and a third base layer 23 stacked sequentially, which together form a closed cavity structure. The closed cavity structure includes a beam source region 20-1, a collimation channel 20-2, and a beam drift region 20-3 connected sequentially.

[0052] The first substrate 21 and the third substrate 23 are glass layers, and the second substrate 22 is a silicon layer. The first substrate 21 can serve as a base plate, and the third substrate 23 can serve as a cover plate. The first substrate 21 and the second substrate 22 can be bonded together by covalent bonds, and the third substrate 23 and the second substrate 22 can also be bonded together by covalent bonds.

[0053] In other words, the first base layer 21, the second base layer 22, and the third base layer 23 are covalently bonded together to form a closed cavity structure. Within the cavity, the patterns of the first base layer 21, the second base layer 22, and the third base layer 23 are matched to form a pattern along... Figure 2 The beam source region 20-1, collimation channel 20-2, and beam drift region 20-3, which are connected sequentially in the X direction, constitute an atomic beam tube device.

[0054] The above configuration utilizes the first and third glass substrates 21 and the second silicon substrate 22 to form a closed cavity structure. While realizing the structural function of the micro atomic bundle device, there is no silicon-glass-silicon film layer combination relationship, thus completely solving the problem of insufficient airtightness caused by reverse voltage debonding and ensuring the sealing performance and frequency stability of the micro atomic bundle device.

[0055] Specifically, refer to Figure 4 As shown, the first base layer 21 is a flat plate structure, and the surface of the first base layer 21 near the first base layer 22 is a flat surface excluding openings. In other words, the first base layer 21 is a complete glass plate without any pattern.

[0056] Reference Figure 5 As shown, the second base layer 22 includes: a first through hole TK1, a second through hole TK2, and a first isolation zone 221 disposed between the first through hole TK1 and the second through hole TK2. The first isolation zone 221 has multiple first channels 222 on the side closest to the third base layer 23, such as... Figure 5 As shown, the first channel 222 connects the first through hole TK1 and the second through hole TK2.

[0057] The orthographic projection of each of the first through hole TK1, the second through hole TK2, and the first channel 222 onto the first base layer 21, that is, the orthographic projection pattern in the direction Y perpendicular to the first base layer 21, is the same as the orthographic projection pattern of the beam source region 20-1, the collimation channel 20-2, and the beam drift region 20-3 that will be formed onto the first base layer 21.

[0058] As can be seen, the first channel 222 is used to form a collimation channel connecting the beam source region 20-1 and the beam drift region 20-3.

[0059] It should be noted that, although Figure 5 The diagram shows that a plurality of first channels 222 are formed in the first isolation zone 221, but this disclosure is not limited thereto. Under the condition of meeting the product design requirements, there may be one or more first channels 222, and the specific number depends on the needs.

[0060] Combination Figure 5 and Figure 6As shown, the cross-section of the first channel 222 in the direction perpendicular to the first base layer 21 is square. That is, if the depth of the first channel 222 in the direction Y perpendicular to the first base layer 21 is represented by h2, and the width in the direction Z parallel to the surface of the first base layer 21 is represented by w1, then w1 = h2, and the direction Z is perpendicular to the direction X.

[0061] By setting the cross-section of the first channel 222 in the direction perpendicular to the first base layer 21 to be square, it can be ensured that the atomic beam is subjected to balanced forces in all directions when passing through the collimation channel.

[0062] Optionally, the ratio of the length L1 of the first channel 222 to the side length w1 of the cross section of the first channel 222 in the direction perpendicular to the first base layer 21 is greater than or equal to 30:1, which can provide a sufficiently long and narrow collimation channel, thereby enabling the atomic beam passing through the collimation channel 222 to form a well-collimated atomic beam. It should be noted that the length of the first channel 222 is the distance in the direction from the first through hole TK1 to the second through hole TK2.

[0063] For example, although Figure 6 The spacing between the first channels 222 is shown to be approximately equal to their width w1, but this is not intended to be limiting. Alternatively, refer to... Figure 5 As shown, the spacing w2 between the first channels 222 can be half the width w1, that is, the spacing w2 between adjacent first channels 222 can be 0.05mm, so as to form a relatively concentrated group of first channels, which is conducive to forming a good collimated atomic beam.

[0064] Optionally, the plurality of first channels are arranged symmetrically with respect to a first axis, which is the axis of symmetry between the first through hole and the second through hole. In the embodiments of this disclosure, the symmetrical arrangement of the plurality of first channels with respect to the first axis means that the overall layout of the plurality of first channels is symmetrical with respect to the first axis.

[0065] Reference Figure 5 As shown, the first axis extends along the direction from the first through hole TK1 to the second through hole TK2, i.e., the X direction in the figure, and each of the first through hole TK1 and the second through hole TK2 is a symmetrical hole symmetrical with respect to the first axis OO'. In this example, the number of first channels 222 is odd, and the central axis of a spaced region of the first channel TK1 coincides with the first axis OO'. The same number of first channels 222 are arranged on both sides of the first axis OO', but the symmetrical arrangement with respect to the first axis in this disclosure is not limited to this case.

[0066] In another case that satisfies the embodiments of this disclosure, refer to Figure 7As shown, the number of first channels is even, the first axis coincides with the central axis of one of the first channels, and the same number of first channels are arranged on both sides of the first channel.

[0067] It should be noted that both odd and even numbers of first channels fall under the protection of the aforementioned "multiple first channels arranged symmetrically relative to the first axis".

[0068] By symmetrically arranging the first channels with respect to the first axis that serves as the axis of symmetry between the first and second through holes, it is possible to ensure that the adsorption force received by the source material in the formed beam source region at the collimation channel is uniform in all directions, thereby improving the collimation rate of the atomic beam.

[0069] Continue to refer to Figure 5 As shown, one end of the second through-hole TK2 is connected to the first channel 222, thus forming a connection between the first through-hole TK1, the first channel 222, and the second through-hole TK2. The second through-hole TK2 is used to form a closed region with the third base layer 23, constituting a beam drift region. In order to form an effective vacuum adsorption force on the source material, ensure sufficient drift length of the atomic beam, and maintain the miniaturized structure, the length L2 of the second through-hole TK2 in the direction X away from the collimation channel, i.e., away from the first channel 222, should be greater than or equal to 15 mm and less than or equal to 20 mm.

[0070] Combination Figure 5 and Figure 8 As shown, where, Figure 8 This is a top view of the atomic beam tube device. Because the top view patterns of its beam source region 20-1, collimation channel 20-2, and beam drift region 20-3 are consistent with the top view patterns of the first through-hole TK1, the first channel 222, and the second through-hole TK2, it can pass through... Figure 8 Understand the specific structure and function of the second through hole TK2 in the second base layer 22.

[0071] Reference Figure 5 and Figure 8 As shown, the second through hole TK2 includes two first opening regions TK2-1 defined by the first limiting region 223 and two second opening regions TK2-2 defined by the second limiting region 224. The two first opening regions TK2-1 are symmetrically arranged with respect to the first axis OO', and the two second opening regions TK2-2 are symmetrically arranged with respect to the first axis OO'.

[0072] It should be understood that Figure 5For ease of illustration, only the first limiting area 223, the second limiting area 224, and the first opening area TK2-1 and the second opening area TK2-2 defined on one side of the first axis OO' are shown. Those skilled in the art should understand that the unmarked parts on the symmetrical position on the other side of the first axis OO' are also the corresponding first limiting area 223, the second limiting area 224, and the first opening area TK2-1 and the second opening area TK2-2 defined on the other side, which will not be described in detail here.

[0073] A first alkali metal adsorbent 26-1 is provided in the first opening area TK2-1 defined by the first limiting area 223, and a getter 25 is provided in the second opening area TK2-2. The second alkali metal adsorbent 26-2 is accommodated between the getter 25 and the sidewall of the second base layer 22 away from the source area 20-3. Of course, a source material is provided in the first through hole TK1, such as an alkali metal source.

[0074] from Figure 8 As can be seen, the first alkali metal adsorbent 26-1 can be accommodated by the first limiting region 223 defining the first opening region TK2-1, and the getter 25 can be accommodated by the second limiting region 224 defining the second opening region TK2-2. The getter 25 can also be used to limit the second alkali metal adsorbent 26-2.

[0075] Optionally, the first alkali metal adsorbent 26-1 and the second alkali metal adsorbent 26-2 may be the same alkali metal adsorbent material. Of course, this disclosure is not limited to this, and the first alkali metal adsorbent 26-1 and the second alkali metal adsorbent 26-2 may also be different alkali metal adsorbent materials, provided that the design requirements are met.

[0076] The getter 25 in the beam drift region 20-3 is used to create a vacuum difference between the beam source region 20-1 and the beam drift region 20-3, causing atoms generated by the alkali metal source in the beam source region 20-1 to enter the drift region 20-3 through the collimation channel 20-2. The first alkali metal adsorbent 26-1 and the second alkali metal adsorbent 26-2 are used to adsorb the residual alkali metal atoms in the beam drift region 20-3.

[0077] To ensure that the vacuum difference is large enough and that the residual alkali metal atoms can be fully adsorbed to ensure the cleanliness of the cavity in the beam drift region 20-3, the length of the second through hole TK2 along the extension direction of the first axis OO', or in other words, along the direction X away from the collimation channel 20-2, should be greater than or equal to 15 mm and less than or equal to 20 mm.

[0078] Reference Figure 9 and Figure 10 As shown, the third base layer 23 includes a first groove 231, a second groove 232, and a second isolation zone 233 disposed between the first groove 231 and the second groove 232.

[0079] Combination Figure 9 and Figure 3 As shown, the first slot 231 is set to correspond to the first through hole TK1, the second slot 232 is set to correspond to the second through hole TK2, and the second isolation area 233 covers the first isolation area 221.

[0080] Specifically, the orthographic projection of the first through hole TK1 on the first base layer 21 overlaps with the orthographic projection of the first slot 231 on the first base layer, and the orthographic projection of the second through hole TK2 on the first base layer 21 overlaps with the orthographic projection of the second slot 232 on the first base layer 21.

[0081] In other words, the first through-hole TK1 of the second base layer 22, the first slot 231 of the third base layer 23, and the surface of the first base layer 21 near the second base layer 22 together form the beam source region 20-1 of the atomic beam tube device, and the second through-hole TK2 of the second base layer 22, the second slot 232 of the third base layer 23, and the surface of the first base layer 21 near the second base layer 22 together form the beam drift region 20-3 of the atomic beam tube device. (Refer to...) Figure 10 and Figure 11 As shown, the first channel 222 and the second isolation zone 233 together form a quasi-straight channel 20-2.

[0082] Optionally, refer to Figure 11 As shown, the depth of the first slot 231 and the second slot 232 is h1, the depth of the first channel 222 is h2, and the thickness of the second base layer 22 is h3, where h3 = h1 + h2.

[0083] It should be noted that Figure 11 Is Figure 3 A cross-sectional view taken along the Z-direction at positions 221 of the first isolation zone and 233 of the second isolation zone. Figure 11 The dashed box indicates the location of the formed beam source region 20-1 and beam drift region 20-3 on the interface.

[0084] This configuration ensures that the collimation channel 20-2, formed by the first channel 222, is located in the center of the entire cavity structure in the direction perpendicular to the first base layer 21, thereby enabling the atomic beam to form a collimated atomic beam with balanced force.

[0085] Through actual testing, the inventors have found that the leakage rate of the cavity-structured atomic beam tube device in this embodiment is better than 1×10⁻⁶. -13 Pa·m 3 / s, while in related technologies, atomic beam tube devices with silicon-glass-silicon interfaces have not yet shown a leakage rate better than 1×10 -11 Pa·m 3The test results are shown in / s. The airtightness of the microvacuum cavity of the atomic beam tube device of this disclosure is at least two orders of magnitude better than that of the structure in the related art.

[0086] As can be seen, the atomic bundle tube structure of this disclosure avoids the silicon-glass-silicon structure in MEMS-based chip-level atomic bundle tube devices, fundamentally eliminating the reverse voltage decoupling problem at the silicon-glass interface and achieving high airtightness of the micro vacuum cavity.

[0087] Based on the same inventive concept, embodiments of this disclosure also provide an atomic beam clock system, including the atomic beam tube device as described in the above embodiments. The atomic beam clock system can be a MEMS-based chip-level micro atomic beam clock system, and this embodiment does not limit it.

[0088] The atomic beam tube devices included in the above atomic beam clock system, as well as the specific structure and function of the atomic beam tube devices therein, have been described in detail in the above embodiments and will not be repeated here.

[0089] By providing an atomic beam clock system with the above-mentioned atomic beam tube devices, it is possible to realize a miniature atomic beam clock system with low power consumption, small physical size, simple manufacturing process, and high airtightness and frequency stability, thereby meeting the application requirements of various high integration, high precision and stability, and has broad application prospects.

[0090] Obviously, the above embodiments of this disclosure are merely examples for clearly illustrating this disclosure, and are not intended to limit the implementation of this disclosure. For those skilled in the art, other variations or modifications can be made based on the above description. It is impossible to exhaustively list all implementation methods here. Any obvious variations or modifications derived from the technical solutions of this disclosure are still within the protection scope of this disclosure.

Claims

1. An atomic beam tube device, characterized in that, The atomic beam tube device consists of a closed cavity structure formed by stacked first, second, and third layers. The closed cavity structure includes a beam source region, a collimation channel, and a beam drift region connected in sequence, and The first and third base layers are glass layers, and the second base layer is a silicon layer; The second base layer includes: a first through hole, a second through hole, and a first isolation zone disposed between the first through hole and the second through hole. The first isolation zone has multiple first passages on the side closest to the third base layer. The first channel connects the first through hole and the second through hole; The surface of the first base layer adjacent to the second base layer is a plane excluding openings. The third base layer includes: a first slot, a second slot, and a second isolation zone disposed between the first slot and the second slot. The first slot is provided corresponding to the first through hole, the second slot is provided corresponding to the second through hole, and the second isolation area covers the first isolation area; The orthographic projection of the first through hole on the first base layer overlaps with the orthographic projection of the first slot on the first base layer. The orthographic projection of the second through hole on the first base layer overlaps with the orthographic projection of the second slot on the first base layer. The first channel has a square cross-section in the direction perpendicular to the first base layer. The plurality of first channels are arranged symmetrically with respect to a first axis, the first axis extending along the direction from the first through hole to the second through hole, and each of the first through hole and the second through hole is a symmetrical hole symmetrical with respect to the first axis. The depth of the first slot and the second slot is h1, the depth of the first channel is h2, and the thickness of the second base layer is h3, where h3 = h1 + h2.

2. The atomic beam tube device according to claim 1, characterized in that, The first and second substrates are bonded together by bonding; the second and third substrates are bonded together by bonding; and / or The length of the beam drift region in the direction away from the collimation channel is greater than or equal to 15 mm and less than or equal to 20 mm.

3. The atomic beam tube device according to claim 1, characterized in that, The second through-hole includes two first opening regions defined by a first defining region and two second opening regions defined by a second defining region. The two first opening regions are symmetrically arranged with respect to the first axis, and the two second opening regions are symmetrically arranged with respect to the first axis.

4. The atomic beam tube device according to claim 3, characterized in that, The first opening region is provided with a first alkali metal adsorbent, and the second opening region is provided with a getter. A second alkali metal adsorbent is disposed between the getter and the sidewall of the second base layer away from the beam source region.

5. An atomic beam clock system, characterized in that, Includes the atomic beam tube device as described in any one of claims 1-4.

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