Substrate employing vertical conductor loops for coupling noise reduction in radio frequency (RF) transmission lines and related antenna modules and methods of manufacture

Abstract

Antenna module substrates employing vertical conductor loops for coupled noise reduction in radio frequency (RF) transmission lines, and related antenna modules and methods of manufacture. To provide effective electrical isolation between closely routed RF transmission lines in a metallization layer of a substrate, vertical conductor loops are formed in an adjacent metallization layer to the RF transmission lines. Magnetic flux loops generated by the RF transmission lines due to carrying RF signals penetrate openings of the adjacent vertical loop structures, inducing a magnetic field in the vertical conductor loops that is opposite in direction to the magnetic flux. The induced magnetic field in the vertical conductor loops induces eddy currents in the vertical conductor loops, which in turn interfere with the magnetic flux, inducing a magnetic damping force in the magnetic flux, thereby reducing or eliminating RF transmission line coupled noise.

Description

[0001] Priority application

[0002] This application claims priority to U.S. Patent Application Serial No. 18 / 170,612, filed February 17, 2023, entitled "SUBSTRATE EMPLOYING VERTICAL CONDUCTOR LOOPS FOR COUPLING NOISE REDUCTION IN RADIO-FREQUENCY (RF) TRANSMISSION LINES, AND RELATED ANTENNA MODULES AND FABRICATION METHODS", the entire contents of which are incorporated herein by reference. background

[0003] I. Technical Field

[0004] This disclosure relates to antenna modules (also known as "packaged antennas" (AiP)) that include a radio frequency (RF) integrated circuit (IC) coupled to an antenna through an antenna module substrate.

[0005] II. Background Technology

[0006] Modern smartphones and other portable devices have expanded the use of different wireless links using various technologies across different radio frequency bands. For example, 5G cellular networks, commonly referred to as fifth-generation (5G) New Radio (NR), encompass frequencies ranging from 24.25 GHz to 86 GHz, with the lower 19.25 GHz (24.25 GHz to 43.5 GHz) being more likely to be used by mobile devices. This spectrum range for 5G communication falls within the millimeter wave (mmWave) or millimeter band. mmWave enables higher data rates than at lower frequencies, such as those used for Wi-Fi networks and current cellular networks.

[0007] Radio frequency (RF) transceivers supporting the mmWave spectrum are incorporated into mobile devices and other portable devices designed to support mmWave communication signals. To support the integration of the RF transceiver into the device, it can be integrated into an RF integrated circuit (IC) chip (RFIC) provided as part of an antenna module. The RFIC chip is implemented in an RFIC semiconductor die (“die”). The antenna module is also referred to as an “antenna in package” (AiP). A typical antenna module includes an RFIC package comprising one or more RFICs, a power management IC (PMIC), and passive electrical components (e.g., inductors, capacitors, etc.) mounted to an antenna module substrate (e.g., the package substrate) as a support and signal routing structure. The RFIC includes an RF signal transmitter and a receiver capable of modulating RF signals to be transmitted in the supported frequency band and demodulating RF signals to be received in the supported frequency band. The antenna module substrate supports a metallized structure to provide chip-to-chip interfaces and external signal interfaces to the RFIC package. The antenna module substrate also includes a metallization layer (which may be included in or in a separate substrate from the package substrate), the metallization layer including a metallization structure electrically coupled to one or more antennas through the package substrate to the RFIC package. The antennas are capable of receiving and radiating electrical RF signals as electromagnetic (EM) signals. The antenna module substrate may include multiple antennas (also referred to as an antenna array) to provide signal coverage over a desired larger area around the antenna module.

[0008] To provide an RF signal feed between the RFIC and the antenna in an antenna module, the antenna module substrate includes RF signal transmission lines (“RF transmission lines”). These RF transmission lines are formed in the antenna module substrate to provide an RF signal routing path between the RFIC and the antenna. If the RF transmission lines are positioned close enough to each other in the antenna module substrate for efficient routing, the conduction of the RF signal in the RF transmission lines can generate electromagnetic waves that can induce currents as “noise” on adjacent RF transmission lines. Therefore, it is conventional in antenna modules to provide some type of isolation feature between the RF transmission lines to prevent or reduce noise. For example, a ground plane may be formed around the RF transmission lines in the antenna module substrate. The ground plane may be formed in adjacent metallization layers above and below the metallization layer of the RF transmission lines, with vertical via connectors disposed between the RF transmission lines connected to the top and bottom adjacent ground planes to effectively isolate the RF transmission lines with the ground plane. Summary of the Invention

[0009] The disclosed aspects include a substrate employing vertical conductor loops for reducing coupling noise in radio frequency (RF) transmit lines. Related antenna modules and manufacturing methods are also disclosed. The substrate may be an antenna module substrate included as a package substrate or a separate antenna substrate within the antenna module. The substrate includes one or more metallization layers for providing signal routing between RF integrated circuits (RFICs) in the antenna module. The substrate may also include antenna elements in one or more metallization layers that serve as antennas for the antenna module. RF transmit lines are formed in the package substrate to route RF signals from the RFIC to the antenna. As the package size of the antenna module decreases, it may be necessary or desirable to provide more efficient signal routing in a substrate where the RF transmit lines are routed and physically positioned closer to each other in a given metallization layer. Such more efficient routing may not provide sufficient lateral spacing between adjacent RF transmit lines to form a ground plane connection between adjacent RF transmit lines to electrically isolate the RF transmit lines and prevent or reduce coupling noise between adjacent RF transmit lines. Therefore, in an exemplary aspect, to provide effective electrical isolation between adjacent and more closely wired RF transmit lines in the metallization layers of a substrate, a vertical conductor loop is formed in one or more adjacent metallization layers adjacent to the RF transmit lines. This vertical conductor loop is formed in a metallization layer adjacent to (e.g., vertically above and / or below) the metallization layer of the RF transmit lines. The vertical conductor loop may be coupled to a ground plane in its respective metallization layer. In this way, the magnetic flux loop generated by the RF transmit lines due to carrying RF signals penetrates the opening of the adjacent vertical loop structure, thereby inducing a magnetic field in the vertical conductor loop opposite to the direction of the magnetic field. The induced magnetic field in the vertical conductor loop induces eddy currents in the vertical conductor loop, which in turn interfere with the magnetic field, thereby causing a magnetic damping force in the magnetic field. This reduces or eliminates the magnetic flux of the magnetic field generated by the RF transmit lines, thereby reducing or eliminating coupling noise induced by one RF transmit line to adjacent RF transmit lines.

[0010] In this way, as an example, the magnetic field induced in adjacent RF transmit lines and generating coupling noise in adjacent RF transmit lines is reduced or eliminated. This reduction or elimination of coupling noise does not require a lateral ground plane connection between adjacent transmit lines in their metallization layer, which would otherwise require sufficient lateral space between adjacent transmit lines to provide such a ground plane connection. Providing such a ground plane connection may not allow for closer spacing between RF transmit lines, nor can it reduce the spacing as desired. However, sufficient reduction and / or elimination of coupling noise can still be achieved when the vertical conductor loop is vertically shifted relative to the RF transmit lines in adjacent metallization layers, but with the ability to provide reduced spacing and intervals between adjacent RF transmit lines in the substrate.

[0011] In this regard, in one exemplary aspect, a substrate is provided. The substrate includes a first metallization layer located in a first plane, the first metallization layer including a first RF transmission line extending in a first direction in the first plane and a second RF transmission line adjacent to the first RF transmission line. The substrate also includes a plurality of second metallization layers parallel to the first metallization layer. The plurality of second metallization layers include a first conductor loop structure adjacent to the first and second RF transmission lines. The first conductor loop structure includes one or more first conductor loops, each first conductor loop located in a second plane orthogonal to the first plane. The substrate also includes a plurality of third metallization layers parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane. The plurality of third metallization layers include a second conductor loop structure adjacent to the first and second RF transmission lines, the second conductor loop structure including one or more second conductor loops, each second conductor loop located in a third plane orthogonal to the first plane.

[0012] In another exemplary aspect, a method of manufacturing a substrate is provided. The method includes forming a first metallization layer in a first plane. The method further includes forming a first RF transmission line extending in a first direction in the first metallization layer within the first metallization layer. The method further includes forming a second RF transmission line adjacent to the first RF transmission line in the first metallization layer. The method further includes forming a plurality of second metallization layers parallel to the first metallization layer. The method further includes forming a first conductor loop structure adjacent to the first and second RF transmission lines in the plurality of second metallization layers, the first conductor loop structure including one or more first conductor loops, each first conductor loop located in a second plane orthogonal to the first plane. The method further includes forming a plurality of third metallization layers parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane. The method further includes forming a second conductor loop structure adjacent to the first and second RF transmission lines in the plurality of third metallization layers, the second conductor loop structure including one or more second conductor loops, each second conductor loop located in a third plane orthogonal to the first plane.

[0013] In another exemplary aspect, an antenna module is provided. The antenna module includes a substrate comprising an antenna substrate and a packaging substrate coupled to the antenna substrate, the antenna substrate including one or more antennas. The antenna module also includes an integrated circuit (IC) die layer including a first die, the first die including a plurality of first die interconnects coupled to the packaging substrate. The substrate includes a first metallization layer located in a first plane and including a first RF transmission line and a second RF transmission line, the first RF transmission line being coupled to a first antenna among the one or more antennas, and the second RF transmission line being adjacent to the first RF transmission line and coupled to a second antenna among the one or more antennas. The substrate also includes a plurality of second metallization layers parallel to the first metallization layer and including first conductor loop structures adjacent to the first and second RF transmission lines, the first conductor loop structures including one or more first conductor loops, each first conductor loop located in a second plane orthogonal to the first plane. The substrate further includes a plurality of third metallization layers parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane. The plurality of third metallization layers include a second conductor loop structure adjacent to the first RF transmission line and the second RF transmission line, the second conductor loop structure including one or more second conductors. The plurality of first die interconnects are coupled to the first RF transmission line and the second RF transmission line. Attached Figure Description

[0014] Figure 1 This is a side view of an exemplary antenna module, which includes a substrate supporting an antenna formed in a metallization layer of a substrate.

[0015] Figure 2A and Figure 2B They are respectively available Figure 1 Top view and cross-sectional side view of an exemplary metallization layer with exemplary wiring provided in the substrate of the antenna module;

[0016] Figure 3 It can be included in the antenna module (including) Figure 1 A top view of an exemplary portion of a substrate in an antenna module, wherein RF transmission lines are wired in a metallization layer, and the spacing between the RF transmission lines is reduced;

[0017] Figure 4A and Figure 4BThese are perspective and cross-sectional side views of an RF transmission line that is wired through a metallization layer in a substrate, wherein vertical conductor loops are formed vertically above and below the RF transmission line in corresponding upper and lower metallization layers, and the vertical conductor loops are configured to penetrate the magnetic flux loop generated by the RF transmission line, thereby inducing magnetic fields and eddy currents in the vertical conductor loops, interfering with the magnetic field, thereby inducing magnetic damping forces in the magnetic field to weaken or eliminate the magnetic field generated by the RF transmission line;

[0018] Figures 5A to 5C These can be included in the antenna module (including) Figure 1 A perspective view, a side view, and a front view of another substrate in the antenna module (in which the substrate includes RF transmission lines wired in a first metallization layer, as well as an upper metallization layer and a lower metallization layer, the upper metallization layer and the lower metallization layer having vertical conductor loops formed therein and connected to the RF transmission lines to weaken or eliminate the magnetic field generated by the RF transmission lines.

[0019] Figure 6A and Figure 6B They are Figure 5B and Figure 5C Close-up views of the side and front views of the substrate in the image;

[0020] Figure 7 yes Figure 5C ;

[0021] Figure 8A and Figure 8B They are Figures 5A to 5C An exemplary graph of noise coupling between adjacent and non-directly adjacent RF transmission lines in a substrate, where the noise coupling is a function of the frequency of the RF signal carried in the RF transmission line;

[0022] Figure 9 This is an example of something that can be used to manufacture an antenna module (including...) Figure 1 A flowchart illustrating an exemplary manufacturing process of a substrate in an antenna module, the substrate including RF transmission lines wired in a first metallization layer, and upper and lower metallization layers having vertical conductor loops formed therein and connected to the RF transmission lines to weaken or eliminate the magnetic field generated by the RF transmission lines. The substrate includes, but is not limited to, […]. Figures 5A to 5C , Figures 6A to 6B and Figure 7 The substrate in, and the substrate may include in Figure 1 In the antenna module;

[0023] Figures 10A to 10B This is an example of something that can be used to manufacture an antenna module (including...) Figure 1A flowchart of another exemplary manufacturing process of a substrate in an antenna module (see diagram), the substrate including RF transmission lines wired in a first metallization layer and upper and lower metallization layers having vertical conductor loops formed therein and connected to the RF transmission lines to weaken or eliminate the magnetic field generated by the RF transmission lines, the substrate including but not limited to Figure 1 , Figures 5A to 5C , Figures 6A to 6B and Figure 7 The substrate in, and the substrate may include in Figure 1 In the antenna module;

[0024] Figures 11A to 11C Examples are given based on Figures 10A to 10B An exemplary manufacturing stage during the manufacturing process of a substrate manufactured in the process;

[0025] Figure 12 This is a block diagram of an exemplary wireless communication device including an antenna module. The antenna module includes a substrate with RF transmission lines wired in a first metallization layer, and upper and lower metallization layers having vertical conductor loops formed therein and connected to the RF transmission lines to weaken or eliminate the magnetic field generated by the RF transmission lines. The substrate includes, but is not limited to, […]. Figure 1 , 5A to Figure 5C , Figures 6A to 6B , Figure 7 and Figures 11A to 11C The substrate in, and the substrate may include in Figure 1 In the antenna module, and according to Figure 9 and Figures 10A to 10B Any manufacturing process in the manufacturing process; and

[0026] Figure 13 This is a block diagram of an exemplary processor-based system including an antenna module. The antenna module includes a substrate comprising RF transmission lines wired in a first metallization layer, and upper and lower metallization layers having vertical conductor loops formed therein and connected to the RF transmission lines to attenuate or eliminate the magnetic field generated by the RF transmission lines. The substrate includes, but is not limited to, […]. Figure 1 , 5A to Figure 5C , Figures 6A to 6B , Figure 7 and Figures 11A to 11C The substrate in, and the substrate may include in Figure 1 In the antenna module, and according to Figure 9 and Figures 10A to 10B Any manufacturing process in the manufacturing process. Detailed Implementation

[0027] Several exemplary aspects of this disclosure will now be described with reference to the accompanying drawings. The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any aspect described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other aspects.

[0028] The disclosed aspects include a substrate employing vertical conductor loops for reducing coupling noise in radio frequency (RF) transmit lines. Related antenna modules and manufacturing methods are also disclosed. The substrate may be an antenna module substrate included as a package substrate or a separate antenna substrate within the antenna module. The substrate includes one or more metallization layers for providing signal routing between RF integrated circuits (RFICs) in the antenna module. The substrate may also include antenna elements serving as antennas for the antenna module within one or more metallization layers. RF transmit lines are formed in the package substrate to route RF signals from the RFIC to the antenna. As the package size of the antenna module decreases, more efficient signal routing may be required or desired in the substrate where the RF transmit lines are routed and physically positioned closer to each other in a given metallization layer. This more efficient routing may not provide sufficient lateral spacing between adjacent RF transmit lines to form a ground plane connection between adjacent RF transmit lines to electrically isolate the RF transmit lines and prevent or reduce coupling noise between them. Therefore, in an exemplary aspect, to provide effective electrical isolation between adjacent and more closely wired RF transmit lines in the metallization layers of the substrate, a vertical conductor loop is formed in one or more metallization layers adjacent to the RF transmit lines. The vertical conductor loop is formed in a metallization layer adjacent to (e.g., vertically above and / or below) the metallization layer of the RF transmit lines. The vertical conductor loop may be coupled to a ground plane in its respective metallization layer. In this way, the magnetic flux loop generated by the RF transmit lines due to carrying RF signals penetrates the opening of the vertical loop structure, thereby inducing a magnetic field in the vertical conductor loop that is opposite in direction to the magnetic field. The induced magnetic field in the vertical conductor loop induces eddy currents in the vertical conductor loop, which in turn interfere with the magnetic field, thereby causing a magnetic damping force in the magnetic field. This weakens or eliminates the magnetic field generated by the RF transmit lines, thereby reducing or eliminating coupling noise induced by one RF transmit line to adjacent RF transmit lines.

[0029] In this way, as an example, the magnetic field induced in adjacent RF transmit lines and generating coupling noise in adjacent RF transmit lines is reduced or eliminated. This reduction or elimination of coupling noise does not require a lateral ground plane connection between adjacent transmit lines in their metallization layer, which would otherwise require sufficient lateral space between adjacent transmit lines to provide such a ground plane connection. Providing such a ground plane connection may not allow for closer spacing between RF transmit lines, nor can it reduce the spacing as desired. However, sufficient reduction and / or elimination of coupling noise can still be achieved when the vertical conductor loop is vertically shifted relative to the RF transmit lines in adjacent metallization layers, but with the ability to provide reduced spacing and intervals between adjacent RF transmit lines in the substrate.

[0030] Before discussing the example of a substrate using a vertical conductor loop for reducing coupling noise in an RF transmit line, starting from Figure 4, please first refer to the following... Figures 1 to 3 An exemplary antenna module and an exemplary RF transmission line wired in a metallization layer may be disposed in the substrate of the antenna module.

[0031] In this respect, Figure 1 This is a view of an exemplary antenna module 100, which is an RFIC package arranged side-by-side. The antenna module 100 includes a substrate 102 that supports signal routing between RFIC dies 104 mounted to the substrate 102. The substrate 102 may be a package substrate. The substrate 102 includes an antenna substrate 106 that includes four (4) antennas 108(1)-108(4), each antenna including a corresponding first antenna element 110(1)-110(4) and a second antenna element 112(1)-112(4). The substrate 102 also includes a package substrate 114 that includes a plurality of metallization layers 116, each metallization layer including a metal interconnect 118 for routing signals between the RFIC die 104 and the antennas 108(1)-108(4). The substrate 102 also includes a core substrate 120 disposed between the package substrate 114 and the antenna substrate 106 to increase the robustness and stability of the antenna module 100. The core substrate 120 also includes a metal interconnect 122 that is coupled through a via 124 to a metal interconnect 118 in the package substrate 114 and a first antenna element 110(1)-110(4) in the antenna substrate 106 to provide a signal routing path between the package substrate 114 and the antenna substrate 106.

[0032] Antenna module 100 also includes an IC die layer 126 disposed in a horizontal plane (plane in the X and Y directions) and including an RFIC die 104 comprising a semiconductor die including an encapsulated RF transceiver. RFIC die 104 is coupled to substrate 102 via die interconnects 128, which are coupled to metal interconnects 118 in a package substrate 114. Antenna module 100 may also include a separate adjacent power management IC (PMIC) die 130 providing power to RFIC die 104. RFIC die 104 and PMIC die 130 are arranged side-by-side in the horizontal direction (X-axis direction). IC die layer 126 also includes other passive components 132 (e.g., capacitors, inductors) electrically coupled through substrate 102 to RFIC die 104 and / or PMIC die 130 as part of circuitry formed therein. Electromagnetic interference (EMI) shielding 134 is disposed around the RFIC die 104 and other components in the IC die layer 126 to provide RF shielding for these components.

[0033] Continue to refer to Figure 1 Each antenna 108(1)-108(4) is a patch antenna, which includes antenna elements 110(1)-110(4) adjacent to the core substrate 120 and second antenna elements 112(1)-112(4) (in the form of metal patches) disposed below the respective first antenna elements 110(1)-110(4) in the vertical direction (Z-axis direction). Antenna elements 110(1)-110(4) are coupled to the RFIC die 104 through vias 136 and metal interconnects 122, 118, and act as RF transmission lines to feed RF signals to and from the antennas 108(1)-108(4). The second antenna elements 112(1)-112(4) are not in contact with the first antenna elements 110(1)-110(4), but are configured to be electromagnetically (EM) coupled to the first antenna elements 110(1)-110(4) when the first antenna elements 110(1)-110(4) receive the RF signal to be radiated. Similarly, when the second antenna elements 112(1)-112(4) are excited by the received RF signal, the second antenna elements 112(1)-112(4) are EM coupled to the first antenna elements 110(1)-110(4) with the received RF signal.

[0034] Figure 2A and Figure 2B These can be found in antenna modules (such as...) Figure 1Top and side views of an exemplary first metallization layer, a second metallization layer and a third metallization layer 200(1)-200(3) disposed in the substrate of the antenna module 100. In this example, the first metallization layer 200(1) has exemplary four (4) wirings RF transmission lines 202(1)-202(4) extending in a first direction (X-axis direction) and parallel to each other. Figure 2A The example diagram shows a top view of the first metallization layer 200(1). Figure 2B Examples of cross Figure 2B The side view of the first metallization layer, the second metallization layer and the third metallization layer 200(1)-200(3) of the A1-A1′ cross section line shown shows the first metallization layer 200(1), wherein the RF transmission lines 202(1)-202(4) are arranged to be adjacent to the second metallization layer 200(2) and the third metallization layer 200(3) in a second vertical direction (Z-axis direction) orthogonal to the first direction (X-axis direction) and located between the second metallization layer and the third metallization layer.

[0035] The conduction of RF signals in the RF transmission lines 202(1)-202(4) in the first metallization layer 200(1) generates EM waves. These EM waves induce currents on adjacent RF transmission lines as "noise," which may not be desirable to negatively impact RF performance. Therefore, in this example, the RF transmission lines 202(1)-202(4) are each surrounded by ground planes 204(1) and 204(2) formed in the corresponding second metallization layer 200(2) and third metallization layer 200(3) in the vertical direction (Z-axis direction). However, the ground planes 204(1) and 204(2) alone do not isolate the RF transmission lines 202(1)-202(4) from each other in the lateral direction within their first metallization layer 200(1). In order to make the RF transmission lines 202(1)-202(4) laterally isolated from each other in the third direction (Y-axis direction), the metal interconnect 206(1) adjacent to each of the RF transmission lines 202(1)-202(4) and between the RF transmission lines is coupled to the ground plane 204(1), 204(2) through the corresponding via 208(1), 208(2). This effectively places the ground plane 204(1), 204(2) on each side of the RF transmission lines 202(1)-202(4) to isolate them from each other.

[0036] However, it may be desirable to reduce the size of the antenna module (such as...) Figure 1 The size of the antenna module (100) in the image. Reducing the size of the antenna module may necessarily mean reducing the size of its substrate. This may require the RF transmission lines in the smaller substrate to be routed in a smaller area within the substrate, thus requiring the RF transmission lines to be positioned closer together with reduced line / space (L / 3) metal patterns and spacing. This is in Figure 3 The example is shown below. Figure 3 It can be included in the antenna module (including) Figure 1 A top view of an exemplary portion of the substrate 300 in the antenna module 100. The substrate 300 includes a first metallization layer 302(1) and four (4) RF transmission lines 304(1)-304(4) wired therein, which extend parallel to each other in a first direction (X-axis direction). However, as Figure 3 As shown, RF transmission lines 304(1)-304(4) are still adjacent to each other, but are more... Figure 2A and Figure 2B The RF transmission lines 202(1)-202(4) are positioned closer to each other. The RF transmission lines 304(1)-304(4) are routed in a wiring channel 306 with a width W1 of 310 micrometers (μm). There is not enough space between adjacent RF transmission lines 304(1)-304(4) in the third lateral direction (Y-axis direction) to form a via that couples to a metal interconnect from an adjacent metallization layer in the first direction (Z-axis direction) to extend a ground plane shield between the RF transmission lines 304(1)-304(4), thereby isolating them from each other in the third lateral direction (Y-axis direction).

[0037] "Adjacent" RF transmission lines mean that such RF transmission lines are spatially adjacent to each other or side by side, with some intermediate space between adjacent RF transmission lines. For example, in this example, RF transmission line 302(1) is adjacent to RF transmission line 302(2), with intermediate space between them. RF transmission line 302(2) is adjacent to both RF transmission lines 302(1) and RF transmission line 302(3), with intermediate space between the respective RF transmission lines 302(2) and RF transmission lines 302(1), 302(3). RF transmission line 302(3) is adjacent to both RF transmission lines 302(2) and RF transmission line 302(4), with intermediate space between the respective RF transmission lines 302(3) and RF transmission lines 302(2), 302(4). RF transmission line 302(4) is adjacent to RF transmission line 302(3), with intermediate space between the respective RF transmission lines 302(4) and RF transmission line 302(3). These corresponding adjacent RF transmission lines can be positioned spatially close enough to each other that the EM wave generated by the conduction of the RF signal in one RF transmission line 302(1)-302(4) generates a noise signal in another adjacent RF transmission line 302(1)-302(4). Therefore, in order to still provide effective noise isolation between the RF transmission lines that are more densely wired in the substrate used for the antenna module, the exemplary aspect disclosed below illustrates a substrate including a vertical conductor loop formed in one or more metallization layers in the substrate adjacent to the metallization layer containing the RF transmission lines. The vertical conductor loop may be formed in the metallization layer vertically above and / or below the metallization layer of the RF transmission lines and may be coupled to a ground plane in their respective metallization layers. The magnetic flux loop generated by the RF transmission lines due to carrying the RF signal penetrates the opening of the adjacent vertical loop structure, thereby inducing a magnetic field in the vertical conductor loop that is opposite to the direction of the magnetic field. The induced magnetic field in the vertical conductor loop induces eddy currents in the vertical conductor loop, which in turn interfere with the magnetic field, thereby causing a magnetic damping force in the magnetic field. This weakens or eliminates the magnetic field generated by the RF transmit line, thereby reducing or eliminating the coupling noise induced by one RF transmit line to adjacent RF transmit lines.

[0038] This is Figure 4A and Figure 4B The example is shown below. Figure 4A This is a perspective view of adjacent RF transmission lines 400(1) and 400(2) wired in a metallization layer (not shown), which will extend in a plane in the X and Y directions of the substrate. Figure 4B yes Figure 4AA side cross-sectional view of adjacent RF transmission lines 400(1) and 400(2) on section line A2-A2′. Adjacent RF transmission lines 400(1) and 400(2) both extend in the first transverse direction (X-axis direction) and are parallel to each other. In this example, RF transmission line 400(1) is adjacent to RF transmission line 400(2), which means that RF transmission lines 400(1) and 400(2) are spatially close to each other or side by side with some intermediate space between them. These corresponding adjacent RF transmission lines 400(1) and 400(2) can be positioned close enough in space to cause the EM wave generated by the conduction of the RF signal in one RF transmission line 400(1) or 400(2) to generate a noise signal in the other corresponding adjacent RF transmission line 400(2) or 400(1).

[0039] Continue to refer to Figure 4A and Figure 4B The first conductor loop structure 402(1) is disposed in another metallization layer (not shown) adjacent to and above the RF transmission lines 400(1) and 400(2) in the vertical direction (Z-axis direction). The "adjacent" nature of the first conductor loop structure 402(1) and the second conductor loop structure 402(2) with the RF transmission lines 400(1) and 400(2) means that the first conductor loop structure 402(1) and the second conductor loop structure 402(2) are spatially adjacent to or next to the RF transmission lines 400(1) and 400(2), wherein there is some intermediate space between the first conductor loop structure 402(1) and the second conductor loop structure 402(2) and the RF transmission lines 400(1) and 400(2). The first conductor loop structure 402(1) includes a plurality of first conductor loops 404(1)(1)-404(1)(5) coupled to each other. Each first conductor loop 404(1)(1)-404(1)(5) is disposed in a first plane P1 in the X-axis and Z-axis directions. A second conductor loop structure 402(2) is also disposed in another metallization layer (not shown) adjacent to and below the RF transmission lines 400(1) and 400(2) in the vertical direction (Z-axis direction). The second conductor loop structure 402(1) includes a plurality of first conductor loops 404(2)(1)-404(2)(5) coupled to each other. Each second conductor loop 404(2)(1)-404(2)(5) is disposed in a first plane P2 in the X-axis and Z-axis directions. (Continue to the next section) Figure 4A and Figure 4B When RF transmission lines 400(1) and 400(2) carry RF signals, a first magnetic field 406 is generated. In this example, the first magnetic field 406 is... Figure 4A and Figure 4BThe magnetic flux of the first magnetic field 406 is generated clockwise around the RF transmission lines 400(1) and 400(2), but this is not limiting. The magnetic flux of the first magnetic field 406 passes through the first conductor loops 404(1)(1)-404(1)(5) and the second conductor loops 404(2)(1)-404(2)(5) because they are oriented above and below the RF transmission lines 400(1) and 400(2) in the path of the first magnetic field 406. In this example, the first conductor loop structure 402(1) and the second conductor loop structure 402(2) are oriented such that the planes P1 and P2 of their respective first conductor loops 404(1)(1)-404(1)(5) and second conductor loops 404(2)(1)-404(2)(5) are perpendicular to the direction of the magnetic flux of the first magnetic field 406 passing through the first conductor loops 404(1)(1)-404(1)(5) and the second conductor loops 404(2)(1)-404(2)(5). In this example, the first conductor loop structure 402(1) and the second conductor loop structure 402(2) are sufficiently close to the RF transmission lines 400(1) and 400(2) to induce eddy currents E1 and E2 in the first conductor loop 404(1)(1)-404(1)(5) and the second conductor loop 404(2)(1)-404(2)(5). This is because the magnetic flux of the first magnetic field 406 penetrates the first conductor loop 404(1)(1)-404(1)(5) and the second conductor loop 404(2)(1)-404(2)(5). The eddy currents E1 and E2 flowing in the first conductor loop 404(1)(1)-404(1)(5) and the second conductor loop 404(2)(1)-404(2)(5) then generate an induced second magnetic field 408 in the opposite direction to the first magnetic field 406. This second magnetic field interferes with the first magnetic field 406, which generates a magnetic damping force in the first magnetic field 406. This magnetic damping force significantly weakens or eliminates the first magnetic field 406. This has the effect of reducing or eliminating noise induced in one RF transmission line 400(1) or 400(2) by another RF transmission line 400(2) or 400(1) carrying the RF signal.

[0040] Figures 5A to 5C These can be included in the antenna module (including) Figure 1The following are perspective views, cross-sectional side views, and cross-sectional front views of another exemplary substrate 500 in the antenna module 100. The substrate 500 includes a first metallization layer 502(1) disposed in a first plane P3, the first metallization layer extending in the first plane in a first direction and a third direction (X-axis direction and Y-axis direction), the first metallization layer including four (4) RF transmission lines 504(1)-504(4). The first metallization layer 502(1) may be a core substrate layer, such that the substrate 500 is a core substrate. Alternatively, the substrate 500 may be a coreless substrate. In this example, the RF transmission lines 504(1)-504(4) each extend adjacent to each other and parallel to each other in the first direction (X-axis direction) in the first plane P3. As a non-limiting example, the RF transmission lines 504(1)-504(4) may be spaced only 40 μm to 60 μm apart and have a spacing of less than 100 μm, such as between 65 μm and 85 μm. In this respect, in this example, RF transmission line 504(1) is adjacent to RF transmission line 504(2) with an intermediate space between them. RF transmission line 504(2) is adjacent to both RF transmission line 504(1) and RF transmission line 504(3), with an intermediate space between the respective RF transmission line 504(2) and RF transmission lines 504(1) and 504(3). RF transmission line 504(3) is adjacent to both RF transmission line 504(2) and RF transmission line 504(4), with an intermediate space between the respective RF transmission line 504(3) and RF transmission lines 504(2) and 504(4). RF transmission line 504(4) is adjacent to RF transmission line 504(3), with an intermediate space between the respective RF transmission line 504(4) and RF transmission line 504(3). These corresponding adjacent RF transmission lines can be positioned close enough in space to each other that the EM wave generated by the conduction of the RF signal in one RF transmission line 504(1)-504(4) generates a noise signal in the other adjacent RF transmission line 504(1)-504(4).

[0041] like Figure 5B and Figure 5CAs shown, the substrate 500 in this example also includes a plurality of second metallization layers 505(1), which include a second metallization layer 502(2) and a third metallization layer 502(3) that are parallel to each other and positioned above the first metallization layer 502(1) in a second direction (Z-axis direction). The second metallization layer 502(2) is adjacent to the first metallization layer 502(1) and is located between the first metallization layer 502(1) and the third metallization layer 502(3) in the second direction (Z-axis direction). "Adjacent" metallization layers mean that one metallization layer is spatially adjacent to or next to another metallization layer. For example, in this example, the third metallization layer 502(3) is adjacent to the second metallization layer 502(2) with an intermediate space between them. The second metallization layer 502(2) is adjacent to the first metallization layer 502(1) and the RF transmission lines 504(1)-504(4) disposed in the first metallization layer 502(1).

[0042] In this example, the substrate 500 further includes a plurality of third metallization layers 505(2), which include a fourth metallization layer 502(4) and a fifth metallization layer 502(5) positioned parallel to each other and below the first metallization layer 502(1) in a second direction (Z-axis direction). The fourth metallization layer 502(4) is directly adjacent to the first metallization layer 502(1) and is located between the first metallization layer 502(1) and the fifth metallization layer 502(5) in the second direction (Z-axis direction). The first metallization layer 502(1) is also located between the plurality of second metallization layers 505(1) and the plurality of third metallization layers 505(2) in the second direction (Z-axis direction). For example, in this example, the fifth metallization layer 502(5) is adjacent to the fourth metallization layer 502(4) with an intermediate space between them. The fourth metallization layer 502(4) is adjacent to the first metallization layer 502(1) and the RF transmission lines 504(1)-504(4) disposed in the first metallization layer 502(1).

[0043] To isolate the RF transmission lines 504(1)-504(4), the third metallization layer 502(3) and the fifth metallization layer 502(5) are ground planes, positioned adjacent to and above and below the RF transmission lines 504(1)-504(4) in the second direction (Z-axis direction). Furthermore, to isolate the respective RF transmission lines 504(1)-504(4) from each other, where there may not be sufficient lateral space in the third direction (Y-axis direction) to form vias to connect to the third metallization layer 502(3) and the fifth metallization layer 502(5) as ground planes, such as... Figure 5B and Figure 5CAs shown, the corresponding first conductor loop structures 506(1)(1)-506(1)(3) and second conductor loop structures 506(2)(1)-506(2)(3) are formed in the corresponding plurality of second metallization layers 505(1) and plurality of third metallization layers 505(2), which are conceptually similar to those described above. Figure 4A and Figure 4B The first conductor loop structure 404(1) and the second conductor loop structure 404(2) operate. Note that... Figure 5B The first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) are shown. Figure 5C End views of the first conductor loop structure 506(1)(1)-506(1)(3) and the second conductor loop structure 506(2)(1)-506(2)(3) extending in the X-axis direction are shown. Only three (3) first conductor loop structures 506(1)(1)-506(1)(3) and three (3) second conductor loop structures 506(2)(1)-506(2)(3) are provided in this example, because each first conductor loop structure 506(1)(1)-506(1)(3) and each second conductor loop structure 506(2)(1)-506(2)(3) is positioned between corresponding adjacent RF transmission lines 504(1)-504(4).

[0044] To explain in further detail, the following is provided: Figure 6A and Figure 6B They are respectively Figure 5B and Figure 5C A close-up view. Figure 6A The first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) are shown. Figure 6AAs shown, in this example, the first conductor loop structure 506(1)(1) includes six (6) first conductor loops 508(1)(1)-508(1)(6), each first conductor loop being disposed in a corresponding plane P4 orthogonal to the plane P3 of the first metallization layer 502(1), such that the first conductor loop structure 506(1)(1) is positioned above the first metallization layer 502(1) and the RF transmission lines 504(1), 504(2) in the second direction (Z-axis direction). This causes the first conductor loops 508(1)(1)-508(1)(6) to be oriented to be penetrated by the magnetic flux of the magnetic field generated by the RF signal in the adjacent RF transmission lines 504(1), 504(2). The first conductor loops 508(1)(1)-508(1)(6) are adjacent to the RF transmission lines 504(1) and 504(2), meaning that the first conductor loops 508(1)(1)-508(1)(6) are spatially adjacent to or next to the RF transmission lines 504(1) and 504(2). The first conductor loops 508(1)(1)-508(1)(6) are formed by a first metal line 510(1) and a second metal line 510(2) that are parallel to each other and coupled together through vias 512(1)-512(7). In this way, a closed conductor loop is formed by coupling the metal material of the first metal line 510(1) and the second metal line 510(2) together with the adjacent vias 512(1)-512(7). For example, the first conductor loop 508(1)(1) is formed by vias 512(1), 512(2) coupled to the first metal line 510(1) and the second metal line 510(2) in the second metallization layer 502(2) and the third metallization layer 502(3). The first conductor loop 508(1)(6) is formed by vias 512(6), 512(7) coupled to the first metal line 510(1) and the second metal line 510(2) in the second metallization layer 502(2) and the third metallization layer 502(3). Therefore, in this example, the first conductor loops 508(1)(1)-508(1)(6) of the first conductive loop structure 506(1)(1) can be formed using the structure of metal lines and vias conventionally formed in the substrate to provide routing signal paths.

[0045] In addition, such as Figure 6AAs shown, in this example, the second conductor loop structure 506(2)(1) further includes six (6) second conductor loops 508(2)(1)-508(2)(6), each second conductor loop being disposed in a corresponding plane P5 orthogonal to the plane P3 of the first metallization layer 502(1). The second conductor loop structure 506(1)(2) is positioned adjacent to and below the first metallization layer 502(1) and RF transmission lines 504(1), 504(2) in a second direction (Z-axis direction). This allows the second conductor loops 508(2)(1)-508(2)(6) to be oriented to be penetrated by the magnetic flux of the magnetic field generated by the RF signal in the RF transmission lines 504(1), 504(2). The second conductor loops 508(2)(1)-508(2)(6) are also adjacent to the RF transmission lines 504(1) and 504(2), but are located on the other side of the first conductor loops 508(1)(1)-508(1)(6) in the vertical direction (Z-axis direction). The second conductor loops 508(2)(1)-508(2)(6) being adjacent to the RF transmission lines 504(1) and 504(2) means that the second conductor loops 508(2)(1)-508(2)(6) are spatially close to or next to the RF transmission lines 504(1) and 504(2). The second conductor loops 508(2)(1)-508(2)(6) are formed by the third metal line 510(3) and the fourth metal line 510(4) which are parallel to each other and coupled together through the vias 514(1)-514(7). In this way, a closed conductor loop is formed by coupling the metal material of the third metal line 510(3) and the fourth metal line 510(4) together with adjacent vias 514(1)-514(7). For example, the second conductor loop 508(2)(1) is formed by coupling the third metal line 510(3) and the fourth metal line 510(4) in the fourth metallization layer 502(4) and the fifth metallization layer 502(5) through vias 514(1) and 514(2). The second conductor loop 508(2)(6) is formed by coupling the third metal line 510(3) and the fourth metal line 510(4) in the fourth metallization layer 502(4) and the fifth metallization layer 502(5) through vias 514(6) and 514(7). Therefore, in this example, the second conductor loop 508(2)(1)-508(2)(6) of the second conductive loop structure 506(2)(1) can be formed using the structure of metal lines and vias conventionally formed in the substrate to provide routing signal paths.

[0046] Note that, due to Figure 6AThe orientation is shown only for the first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1), which are configured to be adjacent to the first RF transmission line 504(1) and the second RF transmission line 504(2) to substantially reduce or eliminate induced noise from one RF transmission line 504(1), 504(2) to another RF transmission line 504(2), 504(1). However, Figure 6B It shows Figure 5A A front view of the cross-section of substrate 500 across section line A4-A4'. (See attached image.) Figure 6B The diagram shows end-side views of RF transmission lines 504(1)-504(4). Vias 512(7) and 514(7) are shown, which are portions of the corresponding first conductor loops 508(1)(6) and second conductor loops 508(2)(6) in the corresponding first conductive loop structures 506(1)(1) and 506(2)(1). Other vias 516(7) and 518(7) are shown, which are portions of the corresponding first conductor loops and second conductor loops in the corresponding first conductive loop structures 506(1)(2) and 506(2)(2) disposed between the corresponding adjacent RF transmission lines 504(2) and 504(3). Other vias 520(7) and 522(7) are also shown, which are portions of the corresponding first conductor loops and second conductor loops in the corresponding first conductive loop structures 506(1)(3) and 506(2)(3) disposed between the corresponding adjacent RF transmission lines 504(3) and 504(4). in other words, Figure 6A Only the first conductive loop structure 506(1)(1) and the second conductive loop structure 506(2)(1) vertically arranged in the second direction (Z-axis direction) between the first RF transmission line 504(1) and the second RF transmission line 504(2) are shown. However, it should be noted that other first conductive loop structures 506(1)(2), 506(1)(3) and second conductive loop structures 506(2)(2), 506(2)(3) are formed in a similar manner to the first conductive loop structure 506(1)(1) and the second conductive loop structure 506(2)(1) to reduce or eliminate noise between the corresponding second RF transmission line 504(2) and the third RF transmission line 504(3) and between the third RF transmission line 504(3) and the fourth RF transmission line 504(4).

[0047] Return to reference Figure 6AUsing the first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) as an example, the first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) are oriented in this example such that the planes P4 and P5 of their respective first conductor loops 508(1)(1)-508(2)(6) and second conductor loops 508(2)(1)-508(2)(6) are perpendicular to the direction of the magnetic flux of a first magnetic field passing through the first conductor loops 508(1)(1)-508(2)(6) and second conductor loops 508(2)(1)-508(2)(6), the first magnetic field being the result of the RF signal in the first RF transmission line 504(1) and / or the second RF transmission line 504(2). Furthermore, in this example, the first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) are aligned along the longitudinal axis LA1 in the second vertical direction (Z-axis direction) and offset in the third transverse direction (Y-axis direction) to be located between the RF transmission lines 504(1) and 504(2). Since the magnetic flux of the first magnetic field penetrates the first conductor loop 508(1)(1)-508(2)(6) and the second conductor loop 508(2)(1)-508(2)(6), eddy currents are induced in the first conductor loop 508(1)(1)-508(2)(6) and the second conductor loop 508(2)(1)-508(2)(6). The eddy currents flowing in the first conductor loop 508(1)(1)-508(2)(6) and the second conductor loop 508(2)(1)-508(2)(6) then generate an induced second magnetic field in the opposite direction to the first magnetic field. This second magnetic field interferes with the first magnetic field, thereby generating a magnetic damping force in the first magnetic field, which significantly weakens or eliminates the first magnetic field. This has the effect of reducing or eliminating noise induced in one RF transmission line 504(1) or 504(2) by another RF transmission line 504(2) or 504(1) carrying the RF signal.

[0048] Note that the above explanation of the structure and magnetic field operation of the first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) also applies to the first conductor loop structure 506(1)(2) and the second conductor loop structure 506(2)(2) of the RF transmission lines 504(2) and 504(3). The first conductor loop structure 506(1)(2) and the second conductor loop structure 506(2)(2) are adjacent to the RF transmission lines 504(2) and 504(3). The above explanation of the structure and magnetic field operation of the first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) also applies to the first conductor loop structure 506(1)(3) and the second conductor loop structure 506(2)(3) of the RF transmission lines 504(3) and 504(4). The first conductor loop structure 506(1)(3) and the second conductor loop structure 506(2)(3) are adjacent to the RF transmission lines 504(3) and 504(4). The first conductor loop structure 506(1)(1) and the second conductor loop structure 506(2)(1) are laterally offset from the corresponding first conductor loop structure 506(1)(2) and the second conductor loop structure 506(2)(2) in the first direction (X-axis direction). The first conductor loop structure 506(1)(2) and the second conductor loop structure 506(2)(2) are laterally offset from the corresponding first conductor loop structure 506(1)(3) and the second conductor loop structure 506(2)(3) in the first direction (X-axis direction).

[0049] Figure 8A and Figure 8B They are Figures 5A to 5C Exemplary curves 800 and 802 show the noise coupling between RF transmission lines 504(1)-504(4) in substrate 500, where the noise coupling is a function of the frequency of the RF signal carried in RF transmission lines 504(1)-504(4) with and without conductor loop structures, respectively. For convenience, Figure 5C The substrate 500 illustrated in is also Figure 7 As shown in [the image]. Figure 7 In the example of substrate 500, the directly adjacent RF transmission lines are RF transmission lines 504(1), 504(2), RF transmission lines 504(2), 504(3), and RF transmission lines 504(3), 504(4). Figure 7In the example of substrate 500, the RF transmission lines that are not directly adjacent to each other are RF transmission lines 504(1), 504(3) and RF transmission lines 504(2), 504(4). RF transmission line 504(2) is disposed between RF transmission lines 504(1) and 504(3), and therefore, RF transmission lines 504(1) and 504(3) are not directly adjacent to each other. RF transmission line 504(3) is disposed between RF transmission lines 504(2) and 504(4), and therefore, RF transmission lines 504(2) and 504(4) are not directly adjacent to each other.

[0050] like Figure 8A As shown in graph 800, curve 804 shows the situation excluding, for example, Figures 5A to 5C In the case of the conductor loop structure provided by the substrate 500, the exemplary coupling between adjacent RF transmission lines 504(1)-504(4) is a function of frequency. Figure 8A Curve 806 in the figure shows that in the case of, such as Figures 5A to 5C In the case of the conductor loop structure provided in the substrate 500, the exemplary coupling between adjacent RF transmission lines 504(1)-504(4) is a function of frequency. Figure 8A As shown, for an RF signal of approximately 45 GHz, the noise coupling decreased by 12 dB from -18 dB to -30 dB in this example.

[0051] like Figure 8B As shown in curve 802, curve 808 shows the situation excluding, for example, Figures 5A to 5C In the case of the conductor loop structure provided by the substrate 500, the exemplary coupling between non-directly adjacent RF transmission lines 504(1)-504(4) is a function of frequency. Figure 8B Curve 810 in the figure shows that in the case of, such as Figures 5A to 5C In the case of the conductor loop structure provided in the substrate 500, the exemplary coupling between non-directly adjacent RF transmission lines 504(1)-504(4) is a function of frequency. Figure 8B As shown, for an RF signal of approximately 45 GHz, the noise coupling decreased by 21 dB from -39 dB to -61 dB in this example.

[0052] There are various ways to form and manufacture a substrate including RF transmission lines wired in a first metallization layer and adjacent upper and lower metallization layers, the substrate having vertical conductor loops formed therein and adjacent to the RF transmission lines to reduce or eliminate magnetic flux generated by the RF transmission lines, the substrate including but not limited to Figure 1 , Figures 5A to 5C , Figures 6A to 6B and Figure 7The substrates 102 and 500 in the substrates, and may be included in the substrates 102 and Figure 1 In the antenna module 100.

[0053] In this respect, Figure 9 This is an example of something that can be used to manufacture an antenna module (including...) Figure 1 A flowchart illustrating an exemplary manufacturing process 900 of the substrate in the antenna module 100. The substrate may include RF transmission lines wired in a first metallization layer and upper and lower metallization layers having vertical conductor loops formed therein and adjacent to the RF transmission lines to weaken or eliminate the magnetic field generated by the RF transmission lines, including but not limited to... Figures 5A to 5C , Figures 6A to 6B , Figure 7 A to Figure 7 E and the substrate in Figure 8, and may be included in Figure 1 In the antenna module. It will be combined with Figures 5A to 5C The substrate 500 discusses the manufacturing process 900, but note that this is not limiting.

[0054] In this respect, the first step in manufacturing process 900 may be to form a first metallization layer 502 (1) in the first plane P3. Figure 9 (in frame 902). The next step in the manufacturing process 900 may be to form in the first metallization layer 502(1) a first RF transmission line 504(1)-504(4) extending in the first plane P3 in the first direction (X-axis direction) ( Figure 9 (in box 904). The next step in the manufacturing process 900 may be to form a second RF transmission line 504(1)-504(4) adjacent to the first RF transmission line 504(1)-504(4) in the first metallization layer 502(1). Figure 9 (in frame 906). The next step in manufacturing process 900 may be to form a plurality of second metallization layers 505(1) parallel to the first metallization layer 502(1). Figure 9 (in box 908). The next step in the manufacturing process 900 may be to form a first conductor loop structure 506(1)(1)-506(1)(3) adjacent to the first RF transmission lines 504(1)-504(4) and the second RF transmission lines 504(1)-504(4) in a plurality of second metallization layers 505(1), wherein the first conductor loop structure 506(1)(1)-506(1)(3) includes one or more first conductor loops 508(1)(1)-508(1)(6), each first conductor loop being in a second plane P4 orthogonal to the first plane P3 ( Figure 9(See box 910 in the text). The next step in the manufacturing process 900 may be to form a plurality of third metallization layers 502(2) parallel to the first metallization layer 505(1), wherein the first metallization layer 502(1) is located between the plurality of second metallization layers 505(1) and the plurality of third metallization layers 505(2) in a second direction (Z-axis direction) orthogonal to the first plane P3. Figure 9 (See box 912 in the text). The next step in the manufacturing process 900 may be to form a second conductor loop structure 506(2)(1)-506(2)(3) adjacent to the first RF transmission lines 504(1)-504(4) and the second RF transmission lines 504(1)-504(4) in a plurality of third metallization layers 505(2), the second conductor loop structure 506(2)(1)-506(2)(3) including one or more second conductor loops 508(2)(1)-508(2)(6), each second conductor loop being in a third plane P5 orthogonal to the first plane P1 ( Figure 9 (Box 914 in the middle).

[0055] Note, as an example, Figure 9 The manufacturing process 900 does not need to follow a specific order. For example, the RF transmission lines 504(1)-504(4) do not need to be manufactured before the first metallization layer 505(1) and the second metallization layer 505(2) are manufactured. The manufacturing process 900 also does not require the RF transmission lines 504(1)-504(4) to be manufactured before the first conductor loop structures 506(1)(1)-506(1)(3) and the second conductor loop structures 506(2)(1)-506(2)(3) are manufactured in their respective first metallization layer 505(1) and second metallization layer 505(2). The manufacturing process 900 is also not limited to core substrate or coreless substrate manufacturing technology. Other manufacturing methods are also possible. For example, Figures 10A to 10B It is used to manufacture similar to Figure 1 , Figures 5A to 5C , Figures 6A to 6B , Figure 7 A to Figure 7 E and the substrates of substrates 102 and 500 in Figure 8 and according to Figures 11A to 11C A flowchart of another exemplary manufacturing process 1000, which includes exemplary manufacturing stages 1100A-1100C. Now, it will be shown... Figures 5A to 5C Taking substrate 500 as an example, let's discuss based on Figure 1 Exemplary manufacturing process 1000 in O Figures 11A to 11C Manufacturing stages 1100A-1100C.

[0056] In this respect, such as Figure 11AAs shown in the exemplary manufacturing stage 1100A, the first step in the manufacturing process 1000 is to form a first metallization layer 502(1) including RF transmission lines 504(1)-504(2). Figure 10A (Box 1002 in the middle). Figure 11B As shown in the exemplary manufacturing stage 1100B, the next step in the manufacturing process 1000 is to form a third metallization layer 505(2) including second conductive loop structures 506(2)(1)-506(2)(3) and couple a first metallization layer 502(1) to the third metallization layer 505(2) such that RF transmission lines 504(1)-504(2) are adjacent to the corresponding second conductive loop structures 506(2)(1)-506(2)(3). Figure 10A (Box 1004 in the middle). Figure 11C As shown in the exemplary manufacturing stage 1100C, the next step in the manufacturing process 1000 is to form a second metallization layer 505(1) including first conductive loop structures 506(1)(1)-506(1)(3) and couple the second metallization layer 505(1) to the first metallization layer 502(1) such that the RF transmission lines 504(1)-504(2) are also adjacent to the corresponding first conductive loop structures 506(1)(1)-506(1)(3). Figure 10B (Box 1006 in the middle).

[0057] As discussed in this application, "adjacent" objects refer to an object that is next to or adjacent to another object, with an intermediate space between them. Adjacent objects may not be physically coupled to each other. Directly adjacent objects mean that such objects are directly next to or adjacent to each other, without any other object situated between them. Non-directly adjacent objects mean that such objects are not directly next to or adjacent to each other, without any other object situated between them.

[0058] An antenna module including a substrate can be provided in or integrated into any wireless communication device and / or processor-based device. The substrate includes RF transmission lines wired in a first metallization layer and upper and lower metallization layers having vertical conductor loops formed therein and adjacent to the RF transmission lines to reduce or eliminate magnetic flux generated by the RF transmission lines. The substrate includes, but is not limited to, […]. Figure 1 , Figures 5A to 5C , Figures 6A to 6B , Figure 7 A to Figure 7 E, Figure 8 and Figure 12 A to Figure 12 Substrates 102 and 500 in X, and may be included in Figure 1 In the antenna module 100, and according to Figure 10 and Figures 11A to 11CThe manufacturing process can be any one of manufacturing processes 1000 or 1100. Examples not intended to limit the scope include: set-top boxes, entertainment units, navigation devices, communication devices, fixed location data units, mobile location data units, Global Positioning System (GP3) devices, mobile phones, cellular phones, smartphones, Session Initiation Protocol (3iP) phones, tablets, phablets, servers, computers, portable computers, mobile computing devices, wearable computing devices (e.g., smartwatches, health or fitness trackers, glasses, etc.), desktop computers, personal digital assistants (PDAs), monitors, computer monitors, televisions, tuners, radios, satellite radios, music players, digital music players, portable music players, digital video players, video players, digital video disc (DVD) players, portable digital video players, automobiles, vehicle components, avionics systems, drones, and multi-rotor aircraft.

[0059] Figure 12 An exemplary wireless communication device 1200 is illustrated, comprising an RF component formed of one or more ICs 1202, wherein any of the ICs 1202 may be included in an antenna module 1203. The antenna module 1203 includes a substrate comprising RF transmission lines wired in a first metallization layer, and upper and lower metallization layers having vertical conductor loops formed therein and adjacent to the RF transmission lines to reduce or eliminate magnetic flux generated by the RF transmission lines. The substrate includes, but is not limited to, […]. Figure 1 , Figures 5A to 5C , Figures 6A to 6B , Figure 7 and Figures 11A to 11C The substrates 102 and 500 in the substrates, and may be included in the substrates 102 and Figure 1 In the antenna module 100, and according to Figure 9 and Figures 10A to 10B Any one of the manufacturing processes in process 900 or 1000. For example... Figure 12 As shown, the wireless communication device 1200 includes an RF transceiver 1204 and a data processor 1206. The components of the RF transceiver and / or data processor 1206 can be split among multiple different die packages 1205(1), 1205(2). The data processor 1206 may include memory for storing data and program code. The RF transceiver 1204 includes a transmitter 1208 and a receiver 1210 supporting bidirectional communication. Generally, the wireless communication device 1200 may include any number of transmitters 1208 and / or receivers 1210 for any number of communication systems and frequency bands. All or part of the RF transceiver 1204 may be implemented on one or more analog ICs, RF ICs, mixed-signal ICs, etc.

[0060] Transmitter 1208 or receiver 1210 can be implemented using a superheterodyne architecture or a direct conversion architecture. In a superheterodyne architecture, the signal undergoes multi-stage frequency conversion between RF and baseband; for example, for receiver 1210, it is converted from RF to intermediate frequency (IF) in one stage and then from IF to baseband in another stage. In a direct conversion architecture, the signal is converted between RF and baseband in a single stage. Superheterodyne and direct conversion architectures can use different circuit blocks and / or have different requirements. Figure 12 In the wireless communication device 1200, the transmitter 1208 and the receiver 1210 are implemented using a direct frequency conversion architecture.

[0061] In the transmission path, data processor 1206 processes the data to be transmitted and provides I and Q analog output signals to transmitter 1208. In the exemplary wireless communication device 1200, data processor 1206 includes digital-to-analog converters (DACs) 1212(1) and 1212(2) to convert the digital signals generated by data processor 1206 into I and Q analog output signals (e.g., I and Q output currents) for further processing.

[0062] Within transmitter 1208, low-pass filters 1214(1) and 1214(2) filter the I and Q analog output signals, respectively, to remove unwanted signals caused by the preceding digital-to-analog conversion. Amplifiers (AMPs) 1216(1) and 1216(2) amplify the signals from low-pass filters 1214(1) and 1214(2), respectively, and provide I and Q baseband signals. Upconverter 1218 upconverts the I and Q baseband signals with the I and QTX LO signals from transmit (TX) local oscillator (LO) signal generator 1222 via mixers 1220(1) and 1220(2) to provide upconverted signal 1224. Filter 1226 filters upconverted signal 1224 to remove unwanted signals caused by signal upconversion and noise in the receive band. Power amplifier (PA) 1228 amplifies the up-converted signal 1224 from filter 1226 to obtain the desired output power level and provides a transmit RF signal. The transmit RF signal is routed through duplexer or switch 1230 and transmitted via antenna 1232.

[0063] In the receiving path, antenna 1232 receives signals transmitted by the base station and provides the received RF signal, which is routed through duplexer or switch 1230 and provided to low-noise amplifier (LNA) 1234. Duplexer or switch 1230 is designed to operate using specific receive (RX) and TX duplexer frequency separation, such that the RX signal is isolated from the TX signal. The received RF signal is amplified by LNA 1234 and filtered by filter 1236 to obtain the desired RF input signal. Downconversion mixers 1238(1) and 1238(2) mix the output of filter 1236 with the I and Q RX LO signals (i.e., LO_I and LO_Q) from RX LO signal generator 1240 to generate I and Q baseband signals. The I and Q baseband signals are amplified by AMPs 1242(1) and 1242(2) and filtered by low-pass filters 1244(1) and 1244(2) to obtain I and Q analog input signals, which are provided to data processor 1206. In this example, data processor 1206 includes analog-to-digital converters (ADCs) 1246(1) and 1246(2) to convert the analog input signals into digital signals for further processing by data processor 1206.

[0064] exist Figure 12 In the wireless communication device 1200, a TX LO signal generator 1222 generates I and Q TXLO signals for up-conversion, while an RX LO signal generator 1240 generates I and Q RX LO signals for down-conversion. Each LO signal is a periodic signal with a specific base frequency. A TX phase-locked loop (PLL) circuit 1248 receives timing information from a data processor 1206 and generates control signals for adjusting the frequency and / or phase of the TX LO signals from the TX LO signal generator 1222. Similarly, an RX PLL circuit 1250 receives timing information from a data processor 1206 and generates control signals for adjusting the frequency and / or phase of the RX LO signals from the RX LO signal generator 1240.

[0065] Figure 13 An example of a processor-based system 1300 is illustrated. This processor-based system includes circuitry disposed in a substrate comprising RF transmission lines wired in a first metallization layer, and upper and lower metallization layers having vertical conductor loops formed therein and adjacent to the RF transmission lines to reduce or eliminate magnetic flux generated by the RF transmission lines. The substrate includes, but is not limited to, […]. Figure 1 , Figures 5A to 5C , Figures 6A to 6B , Figure 7 and Figures 11A to 11C The substrates 102 and 500 in the substrates, and may be included in the substrates 102 and Figure 1In the antenna module 100, and according to Figure 9 and Figures 10A to 10B The manufacturing process can be either 900 or 1000. In this example, the processor-based system 1300 can be formed as IC 1304 in antenna module 1302 and as a system-on-a-chip (SoC) 1306. The processor-based system 1300 includes a central processing unit (CPU) 1308, which includes one or more processors 1310, which may also be referred to as CPU cores or processor cores. The CPU 1308 may have a cache memory 1312 coupled to the CPU 1308 for fast access to temporarily stored data. The CPU 1308 is coupled to a system bus 1314 and can couple master and slave devices included in the processor-based system 1300 to each other. As is well known, the CPU 1308 communicates with these other devices by exchanging address, control, and data information via the system bus 1314. For example, the CPU 1308 may communicate a bus transaction request to a memory controller 1316, which is an example of a slave device. Although in Figure 13 Not illustrated, but multiple system buses 1314 may be provided, each of which constitutes a different architecture.

[0066] Other master and slave devices can be connected to system bus 1314. For example... Figure 13 As illustrated, by way of example, these devices may include a memory system 1320, which may be in a separate antenna module 1302(2) and includes a memory controller 1316 and a memory array 1318, one or more input devices 1322 (which may be in a separate antenna module 1302(3)), one or more output devices 1324 (which may be in a separate antenna module 1302(4)), one or more network interface devices 1326, and one or more display controllers 1328. Each of the memory system 1320, one or more input devices 1322, one or more output devices 1324, one or more network interface devices 1326, and one or more display controllers 1328 may be located in the same or different antenna modules 1302(5). Input devices 1322 may include any type of input device, including but not limited to input keys, switches, voice processors, etc. Output devices 1324 may include any type of output device, including but not limited to audio, video, other visual indicators, etc. Network interface devices 1326 may be any device configured to allow data exchange to and from network 1330. Network 1330 can be any type of network, including but not limited to wired or wireless networks, private or public networks, local area networks (LANs), wireless local area networks (WLANs), wide area networks (WANs), and Bluetooth. TMNetworks and the Internet. The network interface device 1326 can be configured to support any type of communication protocol desired.

[0067] CPU 1308 may also be configured to access display controller 1328 via system bus 1314 to control information transmitted to one or more displays 1332. Display controller 1328 transmits information to be displayed to displays 1332 via one or more video processors 1334, which process the information to be displayed into a format suitable for displays 1332. As an example, display controller 1328 and video processor 1334 may be included as ICs in the same or different antenna modules 1302(5), and in the same or different antenna modules 1302(1) containing CPU 1308. Display 1332 may include any type of display, including but not limited to cathode ray tube (CRT), liquid crystal display (LCD), plasma display, light-emitting diode (LED) display, etc.

[0068] Those skilled in the art will further understand that the various exemplary logic blocks, modules, circuits, and algorithms described in connection with the aspects disclosed herein can be implemented as electronic hardware, stored in memory or another computer-readable medium and executed by a processor or other processing device, or a combination of both. The memory disclosed herein can be of any type and size and can be configured to store any type of information desired. To clearly illustrate this interchangeability, the functionality of the various exemplary components, blocks, modules, circuits, and steps has been generally described above. How such functionality is implemented depends on the specific application, design choices, and / or design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such specific implementation decisions should not be construed as departing from the scope of this disclosure.

[0069] The various exemplary logic blocks, modules, and circuits described in conjunction with the aspects disclosed herein may be implemented or executed using a processor, digital signal processor (DSP), application-specific integrated circuit (ASIC), field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic unit, discrete hardware component, or any combination thereof designed to perform the functions described herein. The processor may be a microprocessor, but in alternative embodiments, the processor may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices (e.g., a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors cooperating with a DSP core, or any other such configuration).

[0070] The aspects disclosed herein may be embodied in hardware and instructions stored in the hardware, and may reside in, for example, random access memory (RAM), flash memory, read-only memory (ROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), registers, hard disks, removable disks, CD-ROMs, or any other form of computer-readable medium known in the art. An exemplary storage medium is coupled to a processor, enabling the processor to read information from and write information to the storage medium. Alternatively, the storage medium may be integral with the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a remote station. Alternatively, the processor and storage medium may reside as discrete components in a remote station, base station, or server.

[0071] It should also be noted that the operational steps described in any of the exemplary aspects of this document are described for the purpose of providing examples and discussion. The described operations may be performed in many different orders other than the order illustrated. Furthermore, the operations described in a single operational step may actually be performed in multiple different steps. Additionally, one or more operational steps discussed in the exemplary aspects may be combined. It will be understood that, as will be apparent to those skilled in the art, many different modifications may be made to the operational steps illustrated in the flowcharts. Those skilled in the art will also understand that any of a variety of different technologies and processes may be used to represent information and signals. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be mentioned throughout the above description may be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof.

[0072] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein can be applied to other variations. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0073] Specific implementation examples are described in the following numbered clauses:

[0074] 1. A substrate, the substrate comprising:

[0075] A first metallization layer, the first metallization layer being located in a first plane and comprising:

[0076] A first radio frequency (RF) transmission line extending in a first direction in the first plane; and a second RF transmission line adjacent to the first RF transmission line;

[0077] Multiple second metallization layers, the multiple second metallization layers being parallel to the first metallization layer

[0078] The metallization layer includes:

[0079] A first conductor loop structure, adjacent to the first RF transmission line and the second RF transmission line, the first conductor loop structure comprising one or more first conductor loops, each first conductor loop located in a second plane orthogonal to the first plane; and

[0080] A plurality of third metallization layers, the plurality of third metallization layers being parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane;

[0081] The plurality of third metallization layers include:

[0082] The second conductor loop structure is adjacent to the first RF transmission line and the second RF transmission line. The second conductor loop structure includes one or more second conductor loops, each of which is located in a third plane orthogonal to the first plane.

[0083] 2. The substrate according to Clause 1, wherein the first RF transmission line is configured to generate magnetic flux in the one or more first conductor loops and the one or more second conductor loops in response to an RF signal in the first RF transmission line, to induce eddy currents in the one or more first conductor loops and the one or more second conductor loops, the eddy currents causing magnetic damping forces in the magnetic flux.

[0084] 3. The substrate according to clause 1 or 2, wherein:

[0085] The first conductor loop structure is orthogonal to the first plane of the first metallization layer; and

[0086] The second conductor loop structure is orthogonal to the first plane of the first metallization layer.

[0087] 4. The substrate according to any one of clauses 1 to 3, wherein:

[0088] Each of the second planes of the one or more first conductor loops is aligned with a corresponding third plane of the one or more second conductor loops in the second direction.

[0089] 5. The substrate according to any one of clauses 1 to 4, wherein:

[0090] The plurality of second metallization layers are adjacent to the first metallization layer; and

[0091] The plurality of third metallization layers are adjacent to the first metallization layer.

[0092] 6. The substrate according to any one of clauses 1 to 5, wherein:

[0093] The plurality of second metallization layers include:

[0094] A second metallization layer, which is adjacent to the first metallization layer and includes a second metal line;

[0095] A third metallization layer, adjacent to the second metallization layer and including a third metal line parallel to the second metal line; and a plurality of first vias, each first via coupling the second metal line to the third metal line to form one or more first conductor loops of the first conductor loop structure; and

[0096] The plurality of third metallization layers include:

[0097] A fourth metallization layer, which is adjacent to the first metallization layer and includes a fourth metal line;

[0098] A fifth metallization layer, adjacent to the fourth metallization layer and including a fifth metal line parallel to the fourth metal line; and

[0099] Multiple second vias, each second via coupling the fourth metal wire to the fifth metal wire to form one or more second conductor loops of the second conductor loop structure.

[0100] 7. The substrate according to Clause 6, wherein:

[0101] The second metallization layer is located between the first metallization layer and the third metallization layer in the second direction; and

[0102] The fourth metallization layer is located between the first metallization layer and the fifth metallization layer in the second direction.

[0103] 8. The substrate according to Clause 1, wherein:

[0104] The first metallization layer further includes:

[0105] The third RF transmission line; and

[0106] A fourth RF transmission line, which is adjacent to the third RF transmission line;

[0107] The plurality of second metallization layers further include:

[0108] A third conductor loop structure, adjacent to the third RF transmission line and the fourth RF transmission line, comprises one or more third conductor loops, each located in a fourth plane orthogonal to the first plane; and

[0109] The plurality of third metallization layers also include:

[0110] A fourth conductor loop structure is adjacent to the third RF transmission line and the fourth RF transmission line. The fourth conductor loop structure includes one or more fourth conductor loops, each of which is located in a fifth plane orthogonal to the first plane.

[0111] 9. The substrate according to Clause 8, wherein:

[0112] Each of the second planes of one or more first conductor loops is aligned with the third plane of the one or more second conductor loops in the second direction;

[0113] Each of the fourth planes of one or more third conductor loops is aligned with the fifth plane of the one or more fourth conductor loops in the second direction;

[0114] The first conductor loop structure is laterally offset from the third conductor loop structure in the first direction; and

[0115] The second conductor loop structure is laterally offset from the fourth conductor loop structure in the first direction.

[0116] 10. The substrate according to clause 8 or 9, wherein:

[0117] The plurality of second metallization layers include:

[0118] A second metallization layer, which is adjacent to the first metallization layer and includes a second metal line and a fourth metal line parallel to the second metal line;

[0119] A third metallization layer, which is adjacent to the second metallization layer and includes a third metal line parallel to the second metal line and a fifth metal line parallel to the third metal line;

[0120] A plurality of first vias, each first via coupling the second metal wire to the third metal wire to form one or more first conductor loops of the first conductor loop structure; and

[0121] Multiple second vias, each second via coupling the fourth metal wire to the fifth metal wire to form one or more second conductor loops of the second conductor loop structure; and

[0122] The plurality of third metallization layers include:

[0123] A fourth metallization layer, which is adjacent to the first metallization layer and includes a sixth metal line and an eighth metal line parallel to the sixth metal line;

[0124] A fifth metallization layer, which is adjacent to the fourth metallization layer and includes a seventh metal line parallel to the sixth metal line and a ninth metal line parallel to the seventh metal line;

[0125] Multiple third vias, each third via coupling the sixth metal wire to the eighth metal wire to form one or more third conductor loops of the third conductor loop structure; and

[0126] Multiple fourth vias, each fourth via coupling the seventh metal wire to the ninth metal wire to form one or more fourth conductor loops of the fourth conductor loop structure.

[0127] 11. The substrate according to any one of clauses 1 to 10, wherein the second RF transmission line is parallel to the first RF transmission line.

[0128] 12. The substrate according to any one of clauses 1 to 11, wherein:

[0129] The plurality of second metallization layers also include a first ground plane;

[0130] The first conductor loop structure is coupled to the first ground plane;

[0131] The plurality of third metallization layers further include a second ground plane; and

[0132] The second conductor loop structure is coupled to the second ground plane.

[0133] 13. The substrate according to Clause 12, the substrate further comprising one or more metal interconnects coupling the first ground plane to the second ground plane.

[0134] 14. The substrate according to any one of clauses 1 to 13, wherein the first RF transmission line and the second RF transmission line are disposed in the first metallization layer with a first spacing of less than or equal to 100 micrometers (μm).

[0135] 15. The substrate according to any one of Clauses 1 to 14, wherein the packaged substrate is integrated into a device selected from the group consisting of: set-top boxes; entertainment units; navigation devices; communication devices; fixed location data units; mobile location data units; global positioning system (GPS) devices; mobile phones; cellular phones; smartphones; session initiation protocol (SiP) phones; tablet computers; tablet phones; servers; computers; portable computers; mobile computing devices; wearable computing devices; desktop computers; personal digital assistants (PDAs); monitors; computer monitors; televisions; tuners; radios; satellite radios; music players; digital music players; portable music players; digital video players; video players; digital video disc (DVD) players; portable digital video players; automobiles; vehicle components; avionics systems; unmanned aerial vehicles; and multi-rotor aircraft.

[0136] 16. A method for manufacturing a substrate, the method comprising:

[0137] A first metallization layer is formed in the first plane;

[0138] A first radio frequency (RF) transmission line extending in a first direction in the first plane is formed in the first metallization layer;

[0139] A second RF transmission line adjacent to the first RF transmission line is formed in the first metallization layer;

[0140] Multiple second metallization layers are formed parallel to the first metallization layer;

[0141] A first conductor loop structure is formed in the plurality of second metallization layers adjacent to the first RF transmission line and the second RF transmission line. The first conductor loop structure includes one or more first conductor loops, each of which is located in a second plane orthogonal to the first plane.

[0142] Forming a plurality of third metallization layers parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane; and

[0143] A second conductor loop structure adjacent to the first RF transmission line and the second RF transmission line is formed in the plurality of third metallization layers. The second conductor loop structure includes one or more second conductor loops, each of which is located in a third plane orthogonal to the first plane.

[0144] 17. The method according to Clause 16, wherein:

[0145] The formation of the first conductor loop structure further includes forming the first conductor loop structure orthogonal to the first plane of the first metallization layer; and

[0146] The formation of the first conductor loop structure also includes forming a second conductor loop structure orthogonal to the first plane of the first metallization layer.

[0147] 18. The method according to clause 16 or 17, wherein forming the first conductor loop structure further comprises aligning each of the second planes of the one or more first conductor loops with a corresponding third plane of the one or more second conductor loops in the second direction.

[0148] 19. The method according to any one of clauses 16 to 18, wherein:

[0149] Forming the plurality of second metallization layers further includes forming the plurality of second metallization layers adjacent to the first metallization layer; and

[0150] Forming the plurality of third metallization layers also includes forming the plurality of third metallization layers adjacent to the first metallization layer.

[0151] 20. The method according to any one of clauses 16 to 19, wherein:

[0152] Forming the plurality of second metallization layers includes:

[0153] A second metallization layer is formed adjacent to the first metallization layer and includes a second metal line;

[0154] A third metallization layer is formed adjacent to the second metallization layer and includes a third metal line parallel to the second metal line; and a plurality of first vias are formed, each first via coupling the second metal line to the third metal line to form one or more first conductor loops of the first conductor loop structure; and

[0155] Forming the plurality of third metallization layers includes:

[0156] A fourth metallization layer is formed adjacent to the first metallization layer and includes a fourth metal line;

[0157] A fifth metallization layer is formed adjacent to the fourth metallization layer and includes a fifth metal line parallel to the fourth metal line; and a plurality of second vias are formed, each second via coupling the fourth metal line to the fifth metal line to form one or more second conductor loops of the second conductor loop structure.

[0158] 21. The method according to any one of clauses 16 to 20, wherein:

[0159] Forming the first metallization layer further includes:

[0160] Forming a third RF transmission line; and

[0161] A fourth RF transmission line is formed adjacent to the third RF transmission line;

[0162] Forming the plurality of second metallization layers further includes:

[0163] A third conductor loop structure is formed adjacent to the third RF transmission line and the fourth RF transmission line. The third conductor loop structure includes one or more third conductor loops, each located in a fourth plane orthogonal to the first plane.

[0164] Forming the plurality of third metallization layers further includes:

[0165] A fourth conductor loop structure is formed adjacent to the third RF transmission line and the fourth RF transmission line. The fourth conductor loop structure includes one or more fourth conductor loops, each of which is located in a fifth plane orthogonal to the first plane.

[0166] 22. The method according to Clause 21, wherein:

[0167] Forming the first conductor loop structure further includes aligning each second plane of the second plane of one or more first conductor loops with the third plane of the one or more second conductor loops in the second direction; and

[0168] Forming the third conductor loop structure further includes aligning each of the fourth planes of the one or more third conductor loops with the fifth plane of the one or more fourth conductor loops in the second direction;

[0169] in:

[0170] The first conductor loop structure is in the first direction and is connected to the third conductor.

[0171] Lateral offset of the body loop structure; and

[0172] The second conductor loop structure is in the first direction with the fourth conductor

[0173] Lateral offset of the body circuit structure.

[0174] 23. An antenna module, the antenna module comprising:

[0175] A substrate, the substrate comprising:

[0176] An antenna substrate including one or more antennas; and

[0177] A packaging substrate coupled to the antenna substrate; and

[0178] An integrated circuit (IC) die layer, the integrated circuit (IC) die layer including a first die, the first die including a plurality of first die interconnects coupled to the packaging substrate;

[0179] The substrate includes:

[0180] A first metallization layer, the first metallization layer being located in a first plane and

[0181] include:

[0182] A first radio frequency (RF) transmission line extends in a first direction in the first plane and is coupled to a first antenna among the one or more antennas; and

[0183] A second RF transmission line is adjacent to the first RF transmission line and is coupled to the second antenna in one or more antennas;

[0184] Multiple second metallization layers, the multiple second metallization layers being parallel to the

[0185] The first metallization layer includes:

[0186] A first conductor loop structure, adjacent to the first RF transmission line and the second RF transmission line, the first conductor loop structure comprising one or more first conductor loops, each first conductor loop located in a second plane orthogonal to the first plane; and

[0187] A plurality of third metallization layers, the plurality of third metallization layers being parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane;

[0188] The plurality of third metallization layers include:

[0189] A second conductor loop structure, adjacent to the first RF transmission line and the second RF transmission line, the second conductor loop structure including one or more second conductors; and

[0190] The plurality of first die interconnects coupled to the first RF transmit line and the second RF transmit line.

[0191] 24. The antenna module according to Clause 23, wherein the first RF transmit line is configured to generate magnetic flux in one or more first conductor loops and one or more second conductor loops in response to an RF signal in the first RF transmit line, to induce eddy currents in the one or more first conductor loops and one or more second conductor loops, the eddy currents causing magnetic damping forces in the magnetic flux.

[0192] 25. The antenna module according to clause 23 or 24, wherein:

[0193] The plurality of second metallization layers include:

[0194] A second metallization layer, which is adjacent to the first metallization layer and includes a second metal line;

[0195] A third metallization layer, adjacent to the second metallization layer and including a third metal line parallel to the second metal line; and a plurality of first vias, each first via coupling the second metal line to the third metal line to form one or more first conductor loops of the first conductor loop structure; and

[0196] The plurality of third metallization layers include:

[0197] A fourth metallization layer, which is adjacent to the first metallization layer and includes a fourth metal line;

[0198] A fifth metallization layer, adjacent to the fourth metallization layer and including a fifth metal line parallel to the fourth metal line; and a plurality of second vias, each second via coupling the fourth metal line to the fifth metal line to form the one or more second conductor loops of the second conductor loop structure.

[0199] 26. The antenna module as described in Clause 25, wherein:

[0200] The second metallization layer is located between the first metallization layer and the third metallization layer in the second direction; and

[0201] The fourth metallization layer is located between the first metallization layer and the fifth metallization layer in the second direction.

[0202] 27. The antenna module according to any one of clauses 23 to 26, wherein:

[0203] The plurality of second metallization layers also include a first ground plane;

[0204] The first conductor loop structure is coupled to the first ground plane;

[0205] The plurality of third metallization layers further include a second ground plane; and

[0206] The second conductor loop structure is coupled to the second ground plane.

[0207] 28. The antenna module according to any one of Clauses 23 to 27, wherein the antenna module is integrated into a device selected from the group consisting of: set-top boxes; entertainment units; navigation devices; communication devices; fixed location data units; mobile location data units; global positioning system (GPS) devices; mobile phones; cellular phones; smartphones; session initiation protocol (SiP) phones; tablet computers; tablet phones; servers; computers; portable computers; mobile computing devices; wearable computing devices; desktop computers; personal digital assistants (PDAs); monitors; computer monitors; televisions; tuners; radios; satellite radios; music players; digital music players; portable music players; digital video players; video players; digital video disc (DVD) players; portable digital video players; automobiles; vehicle components; avionics systems; unmanned aerial vehicles; and multi-rotor aircraft.

Claims

1. A substrate, the substrate comprising: A first metallization layer, the first metallization layer being located in a first plane and comprising: A first radio frequency (RF) transmission line, the first RF transmission line being located in the first plane and extending in a first direction; and The second RF transmission line is adjacent to the first RF transmission line; A plurality of second metallization layers, the plurality of second metallization layers being parallel to the first metallization layer and comprising: A first conductor loop structure, adjacent to the first RF transmission line and the second RF transmission line, the first conductor loop structure comprising one or more first conductor loops, each first conductor loop located in a second plane orthogonal to the first plane; and A plurality of third metallization layers, the plurality of third metallization layers being parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane; The plurality of third metallization layers include: The second conductor loop structure is adjacent to the first RF transmission line and the second RF transmission line. The second conductor loop structure includes one or more second conductor loops, each of which is located in a third plane orthogonal to the first plane.

2. The substrate of claim 1, wherein the first RF transmission line is configured to generate magnetic flux in the one or more first conductor loops and the one or more second conductor loops in response to an RF signal in the first RF transmission line, to induce eddy currents in the one or more first conductor loops and the one or more second conductor loops, the eddy currents causing magnetic damping forces in the magnetic flux.

3. The substrate according to claim 1, wherein: The first conductor loop structure is orthogonal to the first plane of the first metallization layer; and The second conductor loop structure is orthogonal to the first plane of the first metallization layer.

4. The substrate according to claim 1, wherein: Each of the second planes of the one or more first conductor loops is aligned with a corresponding third plane of the one or more second conductor loops in the second direction.

5. The substrate according to claim 1, wherein: The plurality of second metallization layers are adjacent to the first metallization layer; and The plurality of third metallization layers are adjacent to the first metallization layer.

6. The substrate according to claim 1, wherein: The plurality of second metallization layers include: A second metallization layer, which is adjacent to the first metallization layer and includes a second metal line; A third metallization layer, the third metallization layer being adjacent to the second metallization layer and including a third metal line parallel to the second metal line; and Multiple first vias, each first via coupling the second metal wire to the third metal wire to form one or more first conductor loops of the first conductor loop structure; and The plurality of third metallization layers include: A fourth metallization layer, which is adjacent to the first metallization layer and includes a fourth metal line; A fifth metallization layer, adjacent to the fourth metallization layer and including a fifth metal line parallel to the fourth metal line; and Multiple second vias, each second via coupling the fourth metal wire to the fifth metal wire to form one or more second conductor loops of the second conductor loop structure.

7. The substrate according to claim 6, wherein: The second metallization layer is located between the first metallization layer and the third metallization layer in the second direction; and The fourth metallization layer is located between the first metallization layer and the fifth metallization layer in the second direction.

8. The substrate according to claim 1, wherein: The first metallization layer further includes: The third RF transmission line; and The fourth RF transmission line is adjacent to the third RF transmission line; The plurality of second metallization layers further include: A third conductor loop structure, adjacent to the third RF transmission line and the fourth RF transmission line, comprises one or more third conductor loops, each located in a fourth plane orthogonal to the first plane; and The plurality of third metallization layers also include: A fourth conductor loop structure is adjacent to the third RF transmission line and the fourth RF transmission line. The fourth conductor loop structure includes one or more fourth conductor loops, each of which is located in a fifth plane orthogonal to the first plane.

9. The substrate according to claim 8, wherein: Each of the second planes of one or more first conductor loops is aligned with the third plane of the one or more second conductor loops in the second direction; Each of the fourth planes of one or more third conductor loops is aligned with the fifth plane of the one or more fourth conductor loops in the second direction; The first conductor loop structure is laterally offset from the third conductor loop structure in the first direction; and The second conductor loop structure is laterally offset from the fourth conductor loop structure in the first direction.

10. The substrate according to claim 8, wherein: The plurality of second metallization layers include: A second metallization layer, which is adjacent to the first metallization layer and includes a second metal line and a fourth metal line parallel to the second metal line; A third metallization layer, which is adjacent to the second metallization layer and includes a third metal line parallel to the second metal line and a fifth metal line parallel to the third metal line; A plurality of first vias, each first via coupling the second metal wire to the third metal wire to form one or more first conductor loops of the first conductor loop structure; and Multiple second vias, each second via coupling the fourth metal wire to the fifth metal wire to form one or more second conductor loops of the second conductor loop structure; and The plurality of third metallization layers include: A fourth metallization layer, which is adjacent to the first metallization layer and includes a sixth metal line and an eighth metal line parallel to the sixth metal line; A fifth metallization layer, which is adjacent to the fourth metallization layer and includes a seventh metal line parallel to the sixth metal line and a ninth metal line parallel to the seventh metal line; Multiple third vias, each third via coupling the sixth metal wire to the eighth metal wire to form one or more third conductor loops of the third conductor loop structure; and Multiple fourth vias, each fourth via coupling the seventh metal wire to the ninth metal wire to form one or more fourth conductor loops of the fourth conductor loop structure.

11. The substrate according to claim 1, wherein the second RF transmission line is parallel to the first RF transmission line.

12. The substrate according to claim 1, wherein: The plurality of second metallization layers also include a first ground plane; The first conductor loop structure is coupled to the first ground plane; The plurality of third metallization layers further include a second ground plane; and The second conductor loop structure is coupled to the second ground plane.

13. The substrate of claim 12, further comprising one or more metal interconnects coupling the first ground plane to the second ground plane.

14. The substrate of claim 1, wherein the first RF transmission line and the second RF transmission line are disposed in the first metallization layer with a first spacing of less than or equal to 100 micrometers (µm).

15. The substrate of claim 1, wherein the substrate is integrated into a device selected from the group consisting of: set-top boxes; entertainment units; navigation devices; communication devices; fixed location data units; mobile location data units; Global Positioning System (GPS) devices; mobile phones; cellular phones; smartphones; Session Initiation Protocol (SiP) phones; tablet computers; tablet phones; servers; computers; portable computers; mobile computing devices; wearable computing devices; desktop computers; personal digital assistants (PDAs); monitors; computer monitors; televisions; tuners; radios; satellite radios; music players; digital music players; portable music players; digital video players; video players; digital video disc (DVD) players; portable digital video players; automobiles; vehicle components; avionics systems; unmanned aerial vehicles (UAVs); and multi-rotor aircraft.

16. A method for manufacturing a substrate, the method comprising: A first metallization layer is formed in the first plane; A first radio frequency (RF) transmission line extending in a first direction in the first plane is formed in the first metallization layer; A second RF transmission line adjacent to the first RF transmission line is formed in the first metallization layer; Multiple second metallization layers are formed parallel to the first metallization layer; A first conductor loop structure is formed in the plurality of second metallization layers adjacent to the first RF transmission line and the second RF transmission line. The first conductor loop structure includes one or more first conductor loops, each of which is located in a second plane orthogonal to the first plane. A plurality of third metallization layers are formed parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane; as well as A second conductor loop structure adjacent to the first RF transmission line and the second RF transmission line is formed in the plurality of third metallization layers. The second conductor loop structure includes one or more second conductor loops, each of which is located in a third plane orthogonal to the first plane.

17. The method of claim 16, wherein: The formation of the first conductor loop structure further includes forming the first conductor loop structure orthogonal to the first plane of the first metallization layer; and Forming the second conductor loop structure also includes forming a second conductor loop structure orthogonal to the first plane of the first metallization layer.

18. The method of claim 16, wherein forming the first conductor loop structure further comprises aligning each second plane of the second plane of the one or more first conductor loops with a corresponding third plane of the one or more second conductor loops in the second direction.

19. The method of claim 16, wherein: Forming the plurality of second metallization layers further includes forming the plurality of second metallization layers adjacent to the first metallization layer; and Forming the plurality of third metallization layers also includes forming the plurality of third metallization layers adjacent to the first metallization layer.

20. The method of claim 16, wherein: Forming the plurality of second metallization layers includes: A second metallization layer is formed adjacent to the first metallization layer and includes a second metal line; Forming a third metallization layer adjacent to the second metallization layer and including a third metal line parallel to the second metal line; and A plurality of first vias are formed, each first via coupling the second metal wire to the third metal wire to form one or more first conductor loops of the first conductor loop structure; and Forming the plurality of third metallization layers includes: A fourth metallization layer is formed adjacent to the first metallization layer and includes a fourth metal line; A fifth metallization layer is formed adjacent to the fourth metallization layer and includes a fifth metal line parallel to the fourth metal line; and A plurality of second vias are formed, each second via coupling the fourth metal wire to the fifth metal wire to form one or more second conductor loops of the second conductor loop structure.

21. The method of claim 16, wherein: Forming the first metallization layer further includes: Forming a third RF transmission line; and A fourth RF transmission line is formed adjacent to the third RF transmission line; Forming the plurality of second metallization layers further includes: A third conductor loop structure is formed adjacent to the third RF transmission line and the fourth RF transmission line. The third conductor loop structure includes one or more third conductor loops, each located in a fourth plane orthogonal to the first plane. Forming the plurality of third metallization layers further includes: A fourth conductor loop structure is formed adjacent to the third RF transmission line and the fourth RF transmission line. The fourth conductor loop structure includes one or more fourth conductor loops, each of which is located in a fifth plane orthogonal to the first plane.

22. The method of claim 21, wherein: Forming the first conductor loop structure further includes aligning each second plane of the second plane of one or more first conductor loops with the third plane of the one or more second conductor loops in the second direction; and Forming the third conductor loop structure further includes aligning each of the fourth planes of the one or more third conductor loops with the fifth plane of the one or more fourth conductor loops in the second direction; in: The first conductor loop structure is laterally offset from the third conductor loop structure in the first direction; and The second conductor loop structure is laterally offset from the fourth conductor loop structure in the first direction.

23. An antenna module, the antenna module comprising: A substrate, the substrate comprising: An antenna substrate including one or more antennas; and A packaging substrate coupled to the antenna substrate; and An integrated circuit (IC) die layer, the integrated circuit (IC) die layer including a first die, the first die including a plurality of first die interconnects coupled to the packaging substrate; The substrate includes: A first metallization layer, the first metallization layer being located in a first plane and comprising: A first radio frequency (RF) transmission line extends in a first direction in the first plane and is coupled to a first antenna among the one or more antennas; and A second RF transmission line is adjacent to the first RF transmission line and is coupled to the second antenna in one or more antennas; A plurality of second metallization layers, the plurality of second metallization layers being parallel to the first metallization layer and comprising: A first conductor loop structure, adjacent to the first RF transmission line and the second RF transmission line, the first conductor loop structure comprising one or more first conductor loops, each first conductor loop located in a second plane orthogonal to the first plane; and A plurality of third metallization layers, the plurality of third metallization layers being parallel to the first metallization layer, wherein the first metallization layer is located between the plurality of second metallization layers and the plurality of third metallization layers in a second direction orthogonal to the first plane; The plurality of third metallization layers include: A second conductor loop structure, adjacent to the first RF transmission line and the second RF transmission line, the second conductor loop structure including one or more second conductors; and The plurality of first die interconnects coupled to the first RF transmit line and the second RF transmit line.

24. The antenna module of claim 23, wherein the first RF transmit line is configured to generate magnetic flux in the one or more first conductor loops and the one or more second conductor loops in response to an RF signal in the first RF transmit line, to induce eddy currents in the one or more first conductor loops and the one or more second conductor loops, the eddy currents causing magnetic damping forces in the magnetic flux.

25. The antenna module according to claim 23, wherein: The plurality of second metallization layers include: A second metallization layer, which is adjacent to the first metallization layer and includes a second metal line; A third metallization layer, the third metallization layer being adjacent to the second metallization layer and including a third metal line parallel to the second metal line; and Multiple first vias, each first via coupling the second metal wire to the third metal wire to form one or more first conductor loops of the first conductor loop structure; and The plurality of third metallization layers include: A fourth metallization layer, which is adjacent to the first metallization layer and includes a fourth metal line; A fifth metallization layer, adjacent to the fourth metallization layer and including a fifth metal line parallel to the fourth metal line; and Multiple second vias, each second via coupling the fourth metal wire to the fifth metal wire to form one or more second conductor loops of the second conductor loop structure.

26. The antenna module according to claim 25, wherein: The second metallization layer is located between the first metallization layer and the third metallization layer in the second direction; and The fourth metallization layer is located between the first metallization layer and the fifth metallization layer in the second direction.

27. The antenna module according to claim 23, wherein: The plurality of second metallization layers also include a first ground plane; The first conductor loop structure is coupled to the first ground plane; The plurality of third metallization layers further include a second ground plane; and The second conductor loop structure is coupled to the second ground plane.

28. The antenna module of claim 23, wherein the antenna module is integrated into a device selected from the group consisting of: set-top boxes; entertainment units; navigation devices; communication devices; fixed location data units; mobile location data units; Global Positioning System (GPS) devices; mobile phones; cellular phones; smartphones; Session Initiation Protocol (SiP) phones; tablet computers; tablet phones; servers; computers; portable computers; mobile computing devices; wearable computing devices; desktop computers; personal digital assistants (PDAs); monitors; computer monitors; televisions; tuners; radios; satellite radios; music players; digital music players; portable music players; digital video players; video players; digital video disc (DVD) players; portable digital video players; automobiles; vehicle components; avionics systems; unmanned aerial vehicles (UAVs); and multi-rotor aircraft.

Images