Fano resonant photonic crystal modulator with high extinction ratio and high modulation efficiency
CN120686489APending Publication Date: 2025-09-23BEIJING INFORMATION SCI & TECH UNIV
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Patent Information
- Application Number
- CN202511068939.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-31
- Publication Date
- 2025-09-23
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Figure CN120686489A_ABST
Abstract
The invention relates to the field of photoelectric devices, and provides a Fano resonance photonic crystal modulator with high extinction ratio and high modulation efficiency, which comprises a silicon-based slab waveguide, the silicon-based slab waveguide comprises a bottom plate and a first waveguide protruding out of the bottom plate, and a round hole array is etched on the first waveguide to form a photonic crystal nano-beam cavity; a first P-doped region and a first N-doped region are arranged on the silicon-based slab waveguide; a second waveguide is arranged in parallel in the lateral direction of the first waveguide, two round holes are etched in the second waveguide to form a partial transmission element, light waves are input from one end of the second waveguide, and when the frequency of the light waves is the non-resonant frequency of the photonic crystal nano-beam cavity, the light waves are reflected by the partial transmission element; when the light wave frequency is the resonant frequency of the photonic crystal nano-beam cavity, the light wave is output from the other end of the second waveguide and forms a Fano-type formant, the output spectrum is converted from Lorentzian linearity to Fano resonance linetype, the linearity and extinction ratio of the output spectrum resonance peak are improved, and the overall performance of the modulator is improved.
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