Laser and preparation method thereof

Abstract

The invention discloses a laser and a preparation method thereof, the laser comprises a substrate, a laser generation layer and a waveguide layer, the laser generation layer comprises a first reflection layer, a photon generation layer and a second reflection layer which are sequentially nested in the direction parallel to the substrate, and the laser generation layer is used for generating laser; the waveguide layer and the photon generation layer are arranged in the direction perpendicular to the substrate, the waveguide layer makes contact with the photon generation layer, and the waveguide layer is used for guiding out laser. According to the laser provided by the invention, the laser generating layer is perpendicular to the substrate, so that the power of the laser is relatively high, the structure of the laser is simple, and the preparation difficulty and the manufacturing cost can be reduced.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and in particular relates to a laser and a method for manufacturing the same. Background Art

[0002] EELs (edge-emitting lasers) and VCSELs (vertical-cavity surface-emitting lasers) are two different types of semiconductor lasers. EELs are edge-emitting lasers, whose light propagates along the edge of the chip. VCSELs, as vertical-cavity surface-emitting lasers, emit light perpendicular to the chip surface. However, neither type of laser can achieve both high power and ease of fabrication. Summary of the Invention

[0003] The purpose of this application is to at least solve the problem of the inability to achieve both high laser power and ease of fabrication. This purpose is achieved through the following technical solutions:

[0004] The first aspect of the present application provides a laser, comprising:

[0005] substrate;

[0006] a laser generating layer, the laser generating layer comprising a first reflecting layer, a photon generating layer, and a second reflecting layer nested in sequence along a direction parallel to the substrate, the laser generating layer being configured to generate laser light;

[0007] A waveguide layer is arranged with the photon generating layer in a direction perpendicular to the substrate and in contact with the photon generating layer, and the waveguide layer is used to guide the laser out.

[0008] The laser provided in this application includes a substrate, a laser generating layer and a waveguide layer. The laser generating layer is used to generate laser light, and the waveguide layer is used to guide the laser light generated by the laser generating layer. The laser generating layer includes a first reflecting layer, a photon generating layer and a second reflecting layer. The first reflecting layer, the photon generating layer and the second reflecting layer are nested in sequence from the inside to the outside along a direction parallel to the substrate. The laser light generated by the photon generating layer is reflected by the first reflecting layer and the second reflecting layer, and then emitted by the photon generating layer in a direction perpendicular to the substrate, and finally emitted through the waveguide layer. The waveguide layer is used to limit the position of the laser light emission. In this laser, the laser generating layer is perpendicular to the substrate, so that the power of the laser is high, and the structure of the laser is simple, which can reduce the difficulty of preparation and manufacturing cost.

[0009] The second aspect of the present application further provides a method for preparing a laser, comprising:

[0010] providing a substrate;

[0011] forming a laser generating layer on one side of the substrate, the laser generating layer comprising a first reflecting layer, a photon generating layer, and a second reflecting layer nested in sequence along a direction parallel to the substrate, the laser generating layer being used to generate laser light;

[0012] A waveguide layer is formed. The waveguide layer and the photon generating layer are arranged in a direction perpendicular to the substrate and in contact with the photon generating layer. The waveguide layer is used to guide the laser out. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be considered as limiting the present application. The same reference numerals are used throughout the drawings to denote the same components. In the drawings:

[0014] Figure 1 is a cross-sectional view of the first laser provided in an embodiment of the present application;

[0015] Figure 2 yes Figure 1 A top view of a portion of the film layer of the first laser is shown;

[0016] Figure 3 is a cross-sectional view of a second laser provided in an embodiment of the present application;

[0017] Figure 4 yes Figure 3 A top view of a portion of the film layer of the second laser is shown;

[0018] Figure 5 is a cross-sectional view of a third laser provided in an embodiment of the present application;

[0019] Figure 6 yes Figure 5 A top view of a portion of the film layer of the third laser is shown;

[0020] Figure 7 This is a flow chart of a method for preparing a laser provided in an embodiment of the present application;

[0021] Figure 8 is a cross-sectional view of a substrate during the preparation process of a laser provided in an embodiment of the present application;

[0022] Figure 9 yes Figure 8 The corresponding top view;

[0023] Figure 10 This is a cross-sectional view of a process for preparing a first connecting material layer and a second connecting material layer in a process for preparing a laser provided in an embodiment of the present application;

[0024] Figure 11 yes Figure 10 The corresponding top view;

[0025] Figure 12 This is a cross-sectional view of patterning the first connecting material layer and the second connecting material layer during the preparation process of a laser provided by an embodiment of the present application;

[0026] Figure 13 yes Figure 12 The corresponding top view;

[0027] Figure 14 This is a cross-sectional view of a process for preparing a first connecting layer and a second connecting layer in a process for preparing a laser provided in an embodiment of the present application;

[0028] Figure 15 yes Figure 14 The corresponding top view;

[0029] Figure 16 This is a cross-sectional view of a laser device provided in an embodiment of the present application when a first isolation material layer is formed during the preparation process;

[0030] Figure 17 yes Figure 16 A top view of

[0031] Figure 18 This is a cross-sectional view of patterning a first isolation material layer during the preparation process of a laser provided in an embodiment of the present application;

[0032] Figure 19 yes Figure 18 A top view of

[0033] Figure 20 This is a cross-sectional view after a first isolation layer is formed during the preparation process of a laser provided in an embodiment of the present application;

[0034] Figure 21 yes Figure 20 A top view of

[0035] Figure 22 This is a cross-sectional view of a laser generating layer during the preparation process of a laser provided in an embodiment of the present application;

[0036] Figure 23 yes Figure 22 A top view of

[0037] Figure 24 This is a cross-sectional view of a laser manufacturing method provided in an embodiment of the present application when a sacrificial material layer is formed;

[0038] Figure 25 yes Figure 24 A top view of

[0039] Figure 26 This is a cross-sectional view of a patterned sacrificial material layer during the preparation process of a laser provided in an embodiment of the present application;

[0040] Figure 27 yes Figure 26 A top view of

[0041] Figure 28 This is a cross-sectional view of a laser device provided in an embodiment of the present application when a second isolation material layer is formed during the preparation process;

[0042] Figure 29 yes Figure 28 A top view of

[0043] Figure 30 This is a cross-sectional view of a laser provided in an embodiment of the present application during patterning to form a second isolation layer, a laser generating layer, and a sacrificial layer during the preparation process;

[0044] Figure 31 yes Figure 30 A top view of

[0045] Figure 32 is a cross-sectional view of a laser device provided in an embodiment of the present application when a third isolation material layer is formed during the preparation process;

[0046] Figure 33 yes Figure 32 A top view of

[0047] Figure 34 This is a cross-sectional view of patterning the third isolation material layer during the preparation process of a laser provided in an embodiment of the present application;

[0048] Figure 35 yes Figure 34 A top view of

[0049] Figure 36 This is a cross-sectional view of a laser device provided in an embodiment of the present application during the preparation process of a sacrificial layer being removed;

[0050] Figure 37 yes Figure 36 A top view of

[0051] Figure 38 This is a cross-sectional view of patterning the second connecting intermediate layer during the preparation process of a laser provided in an embodiment of the present application;

[0052] Figure 39 yes Figure 38 A top view of

[0053] Figure 40 This is a cross-sectional view of a laser device provided in an embodiment of the present application during the preparation process of an electrode material layer;

[0054] Figure 41 yes Figure 40 A top view of

[0055] Figure 42 This is a cross-sectional view of a laser after forming a first electrode and a second electrode during the preparation process of the laser provided in an embodiment of the present application;

[0056] Figure 43 yes Figure 42 A top view of

[0057] Figure 44 is a cross-sectional view of a laser device provided in an embodiment of the present application when a fourth isolation material layer is formed during the preparation process;

[0058] Figure 45 yes Figure 44 A top view of

[0059] Figure 46 This is a cross-sectional view after a fourth isolation layer is formed during the preparation process of a laser provided in an embodiment of the present application;

[0060] Figure 47 yes Figure 46 A top view of

[0061] Figure 48 is a cross-sectional view of a laser device provided in an embodiment of the present application when a fifth isolation material layer is formed during the preparation process;

[0062] Figure 49 yes Figure 48 A top view of

[0063] Figure 50 This is a cross-sectional view after a fifth isolation layer is formed during the preparation process of a laser provided in an embodiment of the present application;

[0064] Figure 51 yes Figure 50 A top view of

[0065] Figure 52 This is a cross-sectional view of a laser device provided in an embodiment of the present application when a first trace and a second trace are formed during the preparation process;

[0066] Figure 53 yes Figure 52 A top view of

[0067] Figure 54 This is a cross-sectional view after a sixth isolation layer is formed in the preparation process of a laser provided in an embodiment of the present application;

[0068] Figure 55 yes Figure 54 A top view of

[0069] Figure 56 This is a cross-sectional view of a laser device provided in an embodiment of the present application when a second receiving hole is formed during the preparation process;

[0070] Figure 57 yes Figure 56 A top view of

[0071] Figure 58 This is a cross-sectional view after a waveguide material layer is formed during the preparation process of a laser provided in an embodiment of the present application;

[0072] Figure 59 yes Figure 58 A top view of

[0073] Figure 60 This is a cross-sectional view of patterning the first isolation layer during the preparation process of a laser provided in an embodiment of the present application;

[0074] Figure 61 This is a cross-sectional view of a laser device provided in an embodiment of the present application during the formation of a waveguide layer during the preparation process;

[0075] Figure 62 This is a cross-sectional view of a laser device provided in an embodiment of the present application when a second connecting layer having a first portion and a second portion is formed during the preparation process;

[0076] Figure 63 yes Figure 62 A top view of

[0077] Figures 64 to 65 is a cross-sectional view of a laser generating layer formed during the preparation process of another laser provided in an embodiment of the present application;

[0078] Figure 66 This is a cross-sectional view of another laser provided in an embodiment of the present application when a second isolation layer is formed during the preparation process.

[0079] The reference numerals are as follows:

[0080] 1. Laser; 10. First isolation layer; 11. Substrate; 12. Laser generating layer; 121. First reflective layer; 122. Photon generating layer; 1221. First film layer; 1222. Second film layer; 1223. Third film layer; 123. Second reflective layer; 124. Extension; 1240. Protrusion; 1241. First reflective layer extension; 1242. Photon generating layer extension; 1243. Second reflective layer extension; 13. Waveguide layer; 14. First electrode; 15. Second electrode; 16. Connecting layer; 161. First connecting layer; 162. Second connecting layer; 1621. First portion; 1622. Second portion; 17. Second isolation layer; 18. Third isolation layer; 19. Fourth isolation layer; 20. Fifth isolation layer; 21. Sixth isolation layer; 22. First connecting material layer; 23. Second connecting material layer; 24. Second connecting intermediate layer; 25 , first isolation material layer; 26, first reflective material layer; 27, photon generating material layer; 28, second reflective material layer; 29, sacrificial material layer; 30, second isolation material layer; 31, sacrificial layer; A1, first accommodating space; A2, second accommodating space; 32, first routing; 33, second routing; 171, first sub-hole; 181, second sub-hole; 191, third sub-hole; 201, fourth sub-hole; 151, first electrode portion; 152, second electrode portion; 182, fifth sub-hole; , center hole; 141, third electrode portion; 142, fourth electrode portion; 192, sixth sub-hole; 202, seventh sub-hole; 101, first accommodating hole; 172, eighth sub-hole; 34, second accommodating hole; 35, mask layer; 36, third isolation material layer; 37, electrode material layer; 38, fourth isolation material layer; 39, fifth isolation material layer; 40, waveguide material layer. DETAILED DESCRIPTION

[0081] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. Rather, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0082] It should be understood that the terms used herein are for the purpose of describing specific example embodiments only and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "one", "an" and "said" as used herein may also be meant to include plural forms. The terms "comprise", "include", "contain" and "have" are inclusive and therefore specify the presence of stated features, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, steps, operations, elements, parts, and / or combinations thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring them to be performed in the specific order described or illustrated, unless the order of execution is clearly indicated. It should also be understood that additional or alternative steps may be used.

[0083] Although the terms first, second, third, etc. can be used in the text to describe multiple elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish an element, component, region, layer or section from another region, layer or section. Unless the context clearly indicates otherwise, terms such as "first", "second" and other numerical terms do not imply order or sequence when used in the text. Therefore, the first element, component, region, layer or section discussed below can be referred to as the second element, component, region, layer or section without departing from the teaching of the example embodiments.

[0084] For ease of description, spatially relative terms may be used herein to describe the relationship of one element or feature relative to another element or feature as shown in the figures, such as "inside," "outside," "inside," "outside," "below," "beneath," "above," and the like. Such spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is flipped, an element described as "below" or "below" another element or feature would then be oriented as "above" or "above" another element or feature. Thus, the example term "below" can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or in other orientations) and the spatially relative descriptors used herein are interpreted accordingly.

[0085] like Figure 1 and Figure 2As shown, according to an embodiment of the present application, a laser 1 is proposed, comprising a substrate 11, a laser generating layer 12, and a waveguide layer 13. The laser generating layer 12 comprises a first reflective layer 121, a photon generating layer 122, and a second reflective layer 123, which are nested in a direction parallel to the substrate 11. The laser generating layer 12 is used to generate laser light. The waveguide layer 13 is arranged perpendicular to the substrate 11 and in contact with the photon generating layer 122. The waveguide layer 13 is used to guide the laser light out.

[0086] The laser 1 provided in this application includes a substrate 11, a laser generating layer 12 and a waveguide layer 13. The laser generating layer 12 is used to generate laser light, and the waveguide layer 13 is used to guide the laser light generated by the laser generating layer 12. The laser generating layer 12 includes a first reflective layer 121, a photon generating layer 122 and a second reflective layer 123. The first reflective layer 121, the photon generating layer 122 and the second reflective layer 123 are nested in sequence from the inside to the outside along a direction parallel to the substrate 11. The laser light generated by the photon generating layer 122 is reflected by the first reflective layer 121 and the second reflective layer 123, and then emitted from the photon generating layer 122 in a direction perpendicular to the substrate 11, and finally emitted through the waveguide layer 13. The waveguide layer 13 is used to limit the position of the laser light emission. In this laser 1, the laser generating layer 12 is perpendicular to the substrate 11, so that the power of the laser 1 is high, and the structure of the laser 1 is simple, which can reduce the difficulty of preparation and manufacturing cost.

[0087] In the above embodiment, the first reflective layer 121 , the second reflective layer 123 and the photon generating layer 122 may all be ring-shaped structures.

[0088] In the above embodiment, the first reflective layer 121 includes multiple layers of films with different refractive indices, which are nested in sequence from the inside out along a direction parallel to the substrate 11 with the photon generating layer 122 as the center. The second reflective layer 123 includes multiple layers of films with different refractive indices, which are nested in sequence from the inside out along a direction parallel to the substrate 11 with the photon generating layer 122 as the center. The photon generating layer 122 includes multiple layers of films with different doping types, such as Figure 1 and Figure 2 As shown, the photon generating layer 122 may include a first film layer 1221 , a second film layer 1222 and a third film layer 1223 which are nested from the inside out. The multiple film layers with different doping types are nested from the inside out in a direction parallel to the substrate 11 .

[0089] Specifically, the materials of the first reflective layer 121 , the second reflective layer 123 and the photon generating layer 122 all include Group III-V semiconductor materials.

[0090] Specifically, the material of the substrate 11 includes silicon, or the material of the substrate 11 includes a silicon material layer, a silicon oxide layer, and a silicon material layer (Silicon On Insulator, SOI) stacked together.

[0091] In one possible implementation, Figure 1 and Figure 2 As shown, the waveguide layer 13 is located on a side of the laser generating layer 12 away from the substrate 11 , and a first isolation layer 10 is provided between the laser generating layer 12 and the substrate 11 .

[0092] In the above embodiment, the waveguide layer 13 is located on the side of the laser generating layer 12 away from the substrate 11, so that the laser light generated by the laser generating layer 12 is emitted through the waveguide layer 13 toward the side away from the substrate 11. In this embodiment, the laser light is ultimately emitted in a direction perpendicular to the substrate 11. A first isolation layer 10 is provided between the laser generating layer 12 and the substrate 11. The first isolation layer 10 is used to isolate the laser generating layer 12 from the substrate 11, thereby preventing the laser light from being emitted toward the substrate 11.

[0093] Specifically, the material of the first isolation layer 10 includes oxide.

[0094] In another possible embodiment, Figure 3 and Figure 4 As shown, the waveguide layer 13 is disposed in contact with the substrate 11 .

[0095] In the above embodiment, the waveguide layer 13 is arranged in contact with the substrate 11, that is, the waveguide layer 13 is located between the laser generating layer 12 and the substrate 11. The laser emitted by the laser generating layer 12 is emitted through the waveguide layer 13 and then enters the substrate 11, and continues to propagate in the substrate 11 in a direction parallel to the substrate 11.

[0096] In the above embodiment, the propagation of the laser can be limited by limiting the shape and size of the substrate 11, so that the laser is ultimately emitted in a direction parallel to the substrate 11. This embodiment can adjust the emission direction of the laser according to actual needs.

[0097] In the above embodiment, the waveguide layer 13 may be in a block, strip, zigzag, or ring shape. When the waveguide layer 13 is in a ring shape, the shape of the waveguide layer 13 is the same as that of the photon generating layer 122 .

[0098] In one possible implementation, Figures 1 to 4 As shown, the laser 1 further includes a first electrode 14 and a second electrode 15 . The surface of the first reflective layer 121 facing away from the photon generating layer 122 is connected to the first electrode 14 , and the surface of the second reflective layer 123 facing away from the photon generating layer 122 is connected to the second electrode 15 .

[0099] In the above embodiment, the laser 1 further includes a first electrode 14 and a second electrode 15 for supplying power to the laser generating layer 12. The first electrode 14 is connected to the first reflective layer 121 for supplying power to the first reflective layer 121. The second electrode 15 is connected to the second reflective layer 123 for supplying power to the second reflective layer 123.

[0100] In the above embodiment, the first electrode 14 is connected to the side of the first reflective layer 121 facing away from the photon generating layer 122, i.e., the first reflective layer 121 is disposed around the first electrode 14. The second electrode 15 is connected to the surface of the second reflective layer 123 facing away from the photon generating layer 122, i.e., the second electrode 15 is disposed around the second reflective layer 123. This connection method is simple and can further reduce the area occupied by the laser 1, thereby helping to improve the integration of the device.

[0101] In the above embodiment, the material of the first electrode 14 and the second electrode 15 includes metal, specifically tungsten.

[0102] In one possible implementation, Figures 1 to 4 As shown, the laser 1 further includes a connecting layer 16 , which is located between the substrate 11 and the first electrode 14 . The orthographic projection of the connecting layer 16 on the substrate 11 does not overlap with the orthographic projection of the laser generating layer 12 on the substrate 11 .

[0103] In the above embodiment, the laser 1 further includes a connecting layer 16. The orthographic projection of the laser generating layer 12 on the substrate 11 is disposed around the orthographic projection of the connecting layer 16 on the substrate 11. The connecting layer 16 is used to improve the production yield of the laser generating layer 12 during the preparation process of the laser generating layer 12. Because the laser generating layer 12 is made of a III-V semiconductor material, which is not easily grown on the silicon substrate 11, the connecting layer 16 is provided to improve the production yield during the preparation process of the laser generating layer 12. The connecting layer 16 in the laser 1 is the remaining portion of the connecting layer 16 after preparation.

[0104] In the above embodiment, one side of the connection layer 16 contacts the substrate 11 and the other side contacts the first electrode 14 , thereby supporting the first electrode 14 and saving the material usage of the first electrode 14 , thereby helping to save costs.

[0105] In one possible implementation, Figures 1 to 4 As shown, the connection layer 16 includes a first connection layer 161 and a second connection layer 162 . The first connection layer 161 is located on the side of the substrate 11 facing the laser generating layer 12 , and the second connection layer 162 is located on the side of the first connection layer 161 facing the laser generating layer 12 .

[0106] In the above embodiment, the connection layer 16 includes a first connection layer 161 in contact with the surface of the side of the substrate 11 facing the laser generating layer 12, and also includes a second connection layer 162 in contact with the side of the first connection layer 161 away from the substrate 11, wherein the second connection layer 162 is a film layer that is easy for the laser generating layer 12 to grow, and the first connection layer 161 is a film layer that is easy for the second connection layer 162 to grow. The first connection layer 161 is easy to grow on the substrate 11, thereby improving the preparation yield of the first connection layer 161, the second connection layer 162 and the laser generating layer 12, and improving the process compatibility between the laser (laser generating layer 12) and the silicon substrate.

[0107] Specifically, the material of the first connection layer 161 includes silicon-germanium material, and the material of the second connection layer 162 includes germanium.

[0108] In one possible implementation, Figure 1 As shown, the laser 1 further includes a second isolation layer 17 . The second isolation layer 17 is located on a side of the first isolation layer 10 facing away from the substrate 11 . The second isolation layer 17 is disposed around the circumference of the laser generating layer 12 .

[0109] In the above embodiment, the second isolation layer 17 is provided to fill the space on the side of the first isolation layer 10 away from the substrate 11, thereby reducing the height difference between the laser generating layer 12 and the first isolation layer 10, thereby facilitating the preparation of subsequent film layers.

[0110] In the above embodiment, the laser 1 may further include a third isolation layer 18 , which is located on the side of the second isolation layer 17 facing away from the substrate 11 . The third isolation layer 18 and the second isolation layer 17 work together to define the shapes of the first electrode 14 and the second electrode 15 .

[0111] In the above embodiment, the laser 1 may include a fourth isolation layer 19 and a fifth isolation layer 20. The fourth isolation layer 19 is located on the side of the third isolation layer 18 facing away from the substrate 11, and the fifth isolation layer 20 is located on the side of the fourth isolation layer 19 facing away from the substrate 11. The fourth isolation layer 19 and the fifth isolation layer 20 are used to define the shape of the first wiring 32 connected to the first electrode 14 and the second wiring 33 connected to the second electrode 15.

[0112] Specifically, the first isolation layer 10 , the second isolation layer 17 , the third isolation layer 18 , the fourth isolation layer 19 and the fifth isolation layer 20 may be made of the same material.

[0113] Specifically, the second isolation layer 17 includes a first sub-hole 171 extending through the layer in a direction perpendicular to the substrate 11. The third isolation layer 18 includes a second sub-hole 181 extending through the layer in a direction perpendicular to the substrate 11. The fourth isolation layer 19 includes a third sub-hole 191 extending through the layer in a direction perpendicular to the substrate 11. The fifth isolation layer 20 includes a fourth sub-hole 201 extending through the layer in a direction perpendicular to the substrate 11. The first sub-hole 171 and the second sub-hole 181 are connected to form a first through-hole. The first through-hole is arranged around the circumference of the second reflective layer 123. The second electrode 15 is located within the first through-hole. The second electrode 15 includes a first electrode portion 151 located within the first sub-hole 171 and a second electrode portion 152 located within the second sub-hole 181. The line width of the first electrode portion 151 is smaller than the line width of the second electrode portion 152. The dimension of the first electrode portion 151 in the direction perpendicular to the substrate 11 is larger than the dimension of the second electrode portion 152 in the direction perpendicular to the substrate 11. The third sub-hole 191 is connected to the fourth sub-hole 201 . The fourth sub-hole 201 is used to accommodate the second wiring 33 . The second wiring 33 is located in the fourth sub-hole 201 and is connected to the second electrode 15 through the third sub-hole 191 .

[0114] The third isolation layer 18 includes a fifth sub-hole 182 extending through the layer in a direction perpendicular to the substrate 11. The first reflective layer 121 is annular and includes a central hole. The fifth sub-hole 182 communicates with the central hole to form a second through-hole. The first electrode 14 is located within the second through-hole. The first electrode 14 includes a third electrode portion 141 located within the central hole and a fourth electrode portion 142 located within the fifth sub-hole 182. The line width of the third electrode portion 141 is smaller than the line width of the fourth electrode portion 142, and the dimension of the third electrode portion 141 along the direction perpendicular to the substrate 11 is larger than the dimension of the fourth electrode portion 142 along the direction perpendicular to the substrate 11. The fourth isolation layer 19 includes a sixth sub-hole 192 extending through the layer in a direction perpendicular to the substrate 11. The fifth isolation layer 20 includes a seventh sub-hole 202 extending through the layer in a direction perpendicular to the substrate 11. The sixth sub-hole 192 communicates with the seventh sub-hole 202. The seventh sub-hole 202 is used to accommodate the first trace 32. The first trace 32 is located within the seventh sub-hole 202 and is connected to the first electrode 14 through the sixth sub-hole 192.

[0115] Specifically, if Figure 3 As shown, when the waveguide layer 13 is located between the laser generating layer 12 and the substrate 11, the first isolation layer 10 further includes a first receiving hole 101 for receiving the waveguide layer 13. Figure 1 As shown, when the waveguide layer 13 is located on the side of the laser generating layer 12 facing away from the substrate 11, the laser 1 further includes a sixth isolation layer 21, and the laser 1 further includes a second accommodating hole 34 that penetrates the sixth isolation layer 21, the fifth isolation layer 20, the fourth isolation layer 19 and the third isolation layer 18 at one time, the second accommodating hole 34 exposes at least a portion of the photon generating layer 122, and the waveguide layer 13 is located in the second accommodating hole 34.

[0116] In one possible implementation, Figure 5 and Figure 6 As shown, the laser generating layer 12 also includes an extension portion 124, and the extension portion 124 includes a first reflective layer extension portion 1241, a photon generating layer extension portion 1242, and a second reflective layer extension portion 1243 stacked in a direction perpendicular to the substrate 11. The first reflective layer extension portion 1241 is continuously arranged with the first reflective layer 121, the photon generating layer extension portion 1242 is continuously arranged with the photon generating layer 122, and the second reflective layer extension portion 1243 is continuously arranged with the second reflective layer 123.

[0117] In the above embodiment, by providing the extension portion 124 on the laser generating layer 12 , the area of ​​the laser generating layer 12 can be increased, thereby increasing the power of the laser 1 .

[0118] In the above embodiment, the extension portion 124 includes a first reflective layer extension portion 1241, a photon generating layer extension portion 1242, and a second reflective layer extension portion 1243. The first reflective layer extension portion 1241 is continuously disposed with the first reflective layer 121 and made of the same material, and the two can be manufactured using the same process. The photon generating layer extension portion 1242 is continuously disposed with the photon generating layer 122 and made of the same material, and the two can be manufactured using the same process. The second reflective layer extension portion 1243 is continuously disposed with the second reflective layer 123 and made of the same material, and the two can be manufactured using the same process.

[0119] In the extension portion 124, the first reflection layer extension portion 1241, the photon generation layer extension portion 1242 and the second reflection layer extension portion 1243 are arranged in a direction perpendicular to the substrate 11, thereby reducing the volume of the laser generation layer 12, thereby helping to achieve the miniaturization of the laser 1 and helping to improve the integration of the device including the laser 1.

[0120] In one possible implementation, Figure 5 and Figure 6 As shown, the extension portion 124 is located on the side of the laser generating layer 12 close to the substrate 11 , the first reflective layer extension portion 1241 is arranged in contact with the substrate 11 , and the waveguide layer 13 is located on the side of the laser generating layer 12 away from the substrate 11 .

[0121] In the above embodiment, the extension portion 124 is located on the side of the laser generating layer 12 close to the substrate 11, so that the laser light emitted by the laser generating layer 12 is emitted along a side perpendicular to the substrate 11 and emitted toward a side away from the substrate 11. This embodiment is also easy to manufacture.

[0122] In one possible implementation, Figure 5As shown, the orthographic projection of the second reflective layer extension 1243 on the substrate 11 is located within the orthographic projection of the first reflective layer extension 1241 on the substrate 11, the orthographic projection of the photon generating layer extension 1242 on the substrate 11 is located within the orthographic projection of the first reflective layer extension 1241 on the substrate 11, the first reflective layer extension 1241 includes a protruding portion 1240, the orthographic projection of the protruding portion 1240 on the substrate 11 exceeds the orthographic projection of the photon generating layer extension 1242 on the substrate 11, and the protruding portion 1240 is located at one end of the first reflective layer extension 1241 away from the first reflective layer 121.

[0123] In the above embodiment, the orthographic projection of the second reflective layer extension portion 1243 on the substrate 11 is located within the orthographic projection of the first reflective layer extension portion 1241 on the substrate 11, and the orthographic projection of the photon generating layer extension portion 1242 on the substrate 11 is located within the orthographic projection of the first reflective layer extension portion 1241 on the substrate 11, so that the laser generated by the photon generating layer extension portion 1242 can be reflected in the resonant cavity formed by the first reflective layer extension portion 1241 and the second reflective layer extension portion 1243 and then emitted.

[0124] In the above embodiment, the first reflective layer extension 1241 includes a protruding portion 1240. The orthographic projection of the protruding portion 1240 on the substrate 11 extends beyond the orthographic projection of the photon generating layer extension 1242 on the substrate 11. The protruding portion 1240 is located at the end of the first reflective layer extension 1241 that is away from the first reflective layer 121. In other words, the protruding portion 1240 is located at the end of the first reflective layer extension 1241 that is away from the central axis of the laser generating layer 12. The provision of the protruding portion 1240 facilitates subsequent electrical connection of the first reflective layer extension 1241.

[0125] In one possible implementation, Figure 5 As shown, the laser 1 further includes a first electrode 14 and a second electrode 15 . The surface of the protruding portion 1240 facing away from the substrate 11 is connected to the first electrode 14 , and the surface of the second reflective layer extension portion 1243 facing away from the substrate 11 is connected to the second electrode 15 .

[0126] In the above embodiment, the laser 1 further includes a first electrode 14 and a second electrode 15 for supplying power to the laser generating layer 12 and the extension portion 124 of the laser generating layer 12. The first electrode 14 is connected to a surface of the protruding portion 1240 facing away from the substrate 11, and is used to supply power to the first reflective layer 121 and the first reflective layer extension portion 1241. The second electrode 15 is connected to a surface of the second reflective layer extension portion 1243 facing away from the substrate 11, and is used to supply power to the second reflective layer 123 and the second reflective layer extension portion 1243.

[0127] In the above embodiment, the first electrode 14 and the second electrode 15 can both be ring-shaped structures to improve the uniformity of power supply. The first electrode 14 is arranged around the circumference of the second reflective layer extension 1243, and the second electrode 15 is arranged around the circumference of the second reflective layer 123. This connection method is simple and can reduce the difficulty of manufacturing the laser 1.

[0128] In the above embodiment, the material of the first electrode 14 and the second electrode 15 includes metal, specifically tungsten.

[0129] In a feasible implementation, the laser 1 further includes a connection layer 16 , and the connection layer 16 is located between the substrate 11 and the first reflective layer 121 and the first reflective layer extension 1241 .

[0130] In the above embodiment, the laser 1 further includes a connecting layer 16, which is located between the substrate 11 and the first reflective layer 121. The connecting layer 16 is used to improve the yield rate of the laser generating layer 12 during the preparation of the laser generating layer 12. Since the laser generating layer 12 is made of a III-V semiconductor material, which is not easily grown on the silicon substrate 11, the connecting layer 16 is provided to improve the yield rate of the laser generating layer 12 during the preparation of the laser generating layer 12.

[0131] In the above embodiment, one side of the connecting layer 16 contacts the substrate 11, and the other side contacts the first reflective layer 121 and the first reflective layer extension 1241, thereby achieving connection between the first reflective layer 121, the first reflective layer extension 1241 and the substrate 11, which helps to improve the stability of the device.

[0132] In one possible implementation, Figure 5 As shown, the connection layer 16 includes a first connection layer 161 and a second connection layer 162. The first connection layer 161 is located on the side surface of the substrate 11 facing the laser generation layer 12. The second connection layer 162 includes a first part 1621 and a second part 1622. The first part 1621 is located on the side of the first connection layer 161 away from the substrate 11, and the second part 1622 is located on the side of the first part 1621 away from the substrate 11. The first part 1621 is in contact with the first reflective layer extension 1241, and the second part 1622 is in contact with the side surface of the first reflective layer 121 away from the photon generation layer 122.

[0133] In the above embodiment, the connecting layer 16 includes a first connecting layer 161 and a second connecting layer 162, wherein the second connecting layer 162 is a film layer that is easy for the laser generating layer 12 to grow, and the first connecting layer 161 is a film layer that is easy for the second connecting layer 162 to grow. The first connecting layer 161 is easy to grow on the substrate 11, thereby improving the preparation yield of the first connecting layer 161, the second connecting layer 162 and the laser generating layer 12.

[0134] Specifically, the material of the first connection layer 161 includes silicon-germanium material, and the material of the second connection layer 162 includes germanium.

[0135] Specifically, the second connection layer 162 is also used to define the shape of the first reflective layer 121 and the first reflective layer extension 1241, and is used to define the shape of the entire laser generating layer 12. The second connection layer 162 includes a first portion 1621 and a second portion 1622. The first portion 1621 is used to grow the first reflective layer extension 1241, and the second portion 1622 is used to grow the first reflective layer 121. The second portion 1622 has a columnar structure. The side surface of the second portion 1622 grows to form the first reflective layer 121. The first reflective layer 121 is arranged around the circumference of the second portion 1622.

[0136] In one possible implementation, Figure 5 As shown, the laser 1 further includes a second isolation layer 17 , which is disposed around the circumference of the laser generating layer 12 .

[0137] In the above embodiment, the second isolation layer 17 can shield the end of the extension portion 124 away from the first reflective layer 121, preventing laser light from being emitted from the end of the extension portion 124 in a direction parallel to the substrate 11. The second isolation layer 17 also serves to flatten the surface, filling the space on the side of the extension portion 124 away from the substrate 11 to reduce the height difference, thereby facilitating the preparation of subsequent film layers.

[0138] In the above embodiment, the laser 1 may further include a third isolation layer 18 , which is located on the side of the second isolation layer 17 facing away from the substrate 11 . The third isolation layer 18 and the second isolation layer 17 work together to define the shapes of the first electrode 14 and the second electrode 15 .

[0139] In the above embodiment, the laser 1 may include a fourth isolation layer 19, which is located on the side of the third isolation layer 18 facing away from the substrate 11, and the fourth isolation layer 19 is used to define the shape of the first trace 32 connected to the first electrode 14 and the second trace 33 connected to the second electrode 15.

[0140] Specifically, the first isolation layer 10 , the second isolation layer 17 , the third isolation layer 18 , and the fourth isolation layer 19 may be made of the same material.

[0141] Specifically, the second isolation layer 17 includes a first sub-hole 171 extending through the second isolation layer 17 in a direction perpendicular to the substrate 11. The third isolation layer 18 includes a second sub-hole 181 extending through the second isolation layer 18 in a direction perpendicular to the substrate 11. The fourth isolation layer 19 includes a third sub-hole 191 extending through the second isolation layer 19 in a direction perpendicular to the substrate 11. The first sub-hole 171 and the second sub-hole 181 connect to form a first through-hole. The first through-hole is arranged around the circumference of the second reflective layer extension 1243 and exposes a portion of the protruding portion 1240. The second electrode 15 is located within the first through-hole. The second electrode 15 includes a first electrode portion 151 located within the first sub-hole 171 and a second electrode portion 152 located within the second sub-hole 181. The line width of the first electrode portion 151 is smaller than the line width of the second electrode portion 152. The dimension of the first electrode portion 151 in the direction perpendicular to the substrate 11 is larger than the dimension of the second electrode portion 152 in the direction perpendicular to the substrate 11. The third sub-hole 191 is used to accommodate the second wiring 33 . The second wiring 33 is located in the third sub-hole 191 . The third sub-hole 191 is connected to the second sub-hole 181 to achieve connection between the second wiring 33 and the second electrode 15 .

[0142] The second isolation layer 17 includes an eighth sub-hole 172 extending through the second isolation layer 17 in a direction perpendicular to the substrate 11. The third isolation layer 18 includes a fifth sub-hole 182 extending through the second isolation layer 18 in a direction perpendicular to the substrate 11. The eighth sub-hole 172 and the fifth sub-hole 182 communicate with each other to form a second through-hole. The second through-hole is arranged around the circumference of the second reflective layer 123 and exposes a portion of the second emitting layer extension 124. The first electrode 14 is located within the second through-hole. The first electrode 14 includes a third electrode portion 141 located within the eighth sub-hole 172 and a fourth electrode portion 142 located within the fifth sub-hole 182. The line width of the third electrode portion 141 is smaller than the line width of the fourth electrode portion 142. The dimension of the third electrode portion 141 in the direction perpendicular to the substrate 11 is larger than the dimension of the fourth electrode portion 142 in the direction perpendicular to the substrate 11. The fourth isolation layer 19 includes a sixth sub-hole 192 that passes through the fourth isolation layer 19 in a direction perpendicular to the substrate 11 . The sixth sub-hole 192 is used to accommodate the first trace 32 . The first trace 32 is located in the sixth sub-hole 192 . The sixth sub-hole 192 is connected to the fifth sub-hole 182 to achieve connection between the first trace 32 and the first electrode 14 .

[0143] Specifically, when the waveguide layer 13 is located on the side of the laser generating layer 12 facing away from the substrate 11, the laser 1 also includes a fifth isolation layer 20, and the laser 1 also includes a second accommodating hole 34 that penetrates the fifth isolation layer 20, the fourth isolation layer 19, the third isolation layer 18, and the second isolation layer 17 at one time. The second accommodating hole 34 exposes at least a portion of the photon generating layer 122, and the waveguide layer 13 is located in the second accommodating hole 34.

[0144] This application also provides a method for preparing a laser 1, such as Figure 7 Shown, including:

[0145] S200, providing a substrate 11, such as Figure 8 and Figure 9 shown.

[0146] Specifically, the material of the substrate 11 includes silicon, or the material of the substrate 11 includes a silicon material layer, a silicon oxide layer, and a silicon material layer (Silicon On Insulator, SOI) stacked together.

[0147] S400 , forming a laser generating layer 12 on one side of the substrate 11 , the laser generating layer 12 comprising a first reflecting layer 121 , a photon generating layer 122 , and a second reflecting layer 123 nested in sequence along a direction parallel to the substrate 11 , and the laser generating layer 12 is used to generate laser light.

[0148] In the above embodiment, the first reflective layer 121 , the second reflective layer 123 and the photon generating layer 122 may all be ring-shaped structures.

[0149] In the above embodiment, the first reflective layer 121 includes multiple layers of films with different refractive indices, which are nested sequentially from the inside out along a direction parallel to the substrate 11, with the photon generating layer 122 as the center. The second reflective layer 123 includes multiple layers of films with different refractive indices, which are nested sequentially from the inside out, with the photon generating layer 122 as the center, along a direction parallel to the substrate 11. The photon generating layer 122 includes multiple layers of films with different doping types, which are nested sequentially from the inside out, along a direction parallel to the substrate 11.

[0150] Specifically, the materials of the first reflective layer 121 , the second reflective layer 123 and the photon generating layer 122 all include Group III-V semiconductor materials.

[0151] S600 , forming a waveguide layer 13 . The waveguide layer 13 and the photon generating layer 122 are arranged in a direction perpendicular to the substrate 11 and in contact with the photon generating layer 122 . The waveguide layer 13 is used to guide the laser out.

[0152] Specifically, the waveguide layer 13 may be made of silicon nitride.

[0153] In the above preparation method, a laser generating layer 12 including a first reflecting layer 121, a photon generating layer 122, and a second reflecting layer 123 is formed on a substrate 11. The first reflecting layer 121, the photon generating layer 122, and the second reflecting layer 123 are nested in sequence from the inside to the outside along a direction parallel to the substrate 11. The laser generated by the photon generating layer 122 is reflected by the first reflecting layer 121 and the second reflecting layer 123 and then emitted from the photon generating layer 122 in a direction perpendicular to the substrate 11. A waveguide layer 13 is formed on one side of the laser generating layer 12. The waveguide layer 13 and the photon generating layer 122 are arranged in a direction perpendicular to the substrate 11 and the waveguide layer 13 is in contact with the photon generating layer 122. The waveguide layer 13 is used to limit the position of the laser emission, so that the laser generated by the photon generating layer 122 and emitted in a direction perpendicular to the substrate 11 continues to propagate after being limited by the waveguide layer 13. In the preparation method of the laser 1, the power of the laser 1 can be improved by preparing the laser generating layer 12 perpendicular to the substrate 11. The laser 1 prepared by the preparation method has a simple structure, which can reduce the manufacturing difficulty and manufacturing cost.

[0154] In a feasible implementation, step S400 includes:

[0155] S420, such as Figure 10 and Figure 11 As shown, a first connection material layer 22 and a second connection material layer 23 are formed on one side surface of the substrate 11 and patterned, as shown in FIG. Figures 12 to 15 As shown, part of the first connection material layer 22 and the second connection material layer 23 are removed to form a first connection layer 161 and a second connection intermediate layer 24 which are sequentially arranged in a direction away from the substrate 11 .

[0156] Specifically, the material of the first connection material layer 22 may include silicon germanium; and the material of the second connection material layer 23 may include germanium.

[0157] Specifically, the first connection material layer 22 and the second connection material layer 23 may be simultaneously patterned through an etching process, and only the first connection material layer 22 and the second connection material layer 23 in a preset area are retained, thereby forming the first connection layer 161 and the second connection intermediate layer 24 .

[0158] Specifically, the above patterning process can be achieved by forming a mask layer 35 on the side of the second connection material layer 23 facing away from the substrate 11 using a photoresist, and then performing an etching process.

[0159] S440, such as Figures 16 to 21 As shown, a first isolation material layer 25 is formed on the side of the second connection intermediate layer 24 facing away from the substrate 11 and is thinned to form a first isolation layer 10. The first isolation layer 10 wraps the circumferential arrangement of the first connection layer 161 and exposes part or all of the circumference of the second connection intermediate layer 24.

[0160] Specifically, the first isolation material layer 25 may be made of an oxide material, which can shield the laser.

[0161] Specifically, the first isolation material layer 25 is formed on the side of the second connection intermediate layer 24 facing away from the substrate 11, and covers the second connection intermediate layer 24 and the area of ​​the substrate 11 exposed by the first connection layer 161. After the first isolation material layer 25 is formed, Figure 16 and Figure 18 As shown, the surface of the first isolation material layer 25 is firstly planarized by a chemical mechanical polishing process, as shown in FIG. Figure 20 and Figure 21 As shown, the first isolation material layer 25 is then thinned using an etching process to expose part or all of the circumference of the second connection intermediate layer 24, facilitating the subsequent formation of the first reflective layer 121, the second reflective layer 123, and the photon generating layer 122 around the second connection intermediate layer 24. Thus, the first isolation layer 10 is formed from the first isolation material layer 25.

[0162] S460, such as Figure 22 and Figure 23 As shown, a first reflective material layer 26, a photon generating material layer 27 and a second reflective material layer 28 are sequentially formed on the peripheral side surface of the second connecting intermediate layer 24 and the side surface of the second connecting intermediate layer 24 facing away from the substrate 11, and the first reflective material layer 26, the photon generating material layer 27 and the second reflective material layer 28 are patterned, and the portions of the first reflective material layer 26, the photon generating material layer 27 and the second reflective material layer 28 located on the side surface of the second connecting intermediate layer 24 facing away from the substrate 11 are removed to form a first reflective layer 121, a photon generating layer 122 and a second reflective layer 123.

[0163] In the above embodiment, before preparing the laser generating layer 12, a first connecting layer 161 and a second connecting layer 162 are first formed on the substrate 11, and then a first isolation layer 10 is formed. The first isolation layer 10 is used to wrap the circumferential side of the first connecting layer 161 to facilitate the subsequent formation of the first reflection layer 121, the second reflection layer 123 and the photon generating layer 122 in the circumferential direction of the second connecting intermediate layer 24. The second connecting layer 162 is a film layer that is easy for the laser generating layer 12 to grow, and the first connecting layer 161 is a film layer that is easy for the second connecting layer 162 to grow. The first connecting layer 161 is easy to grow on the substrate 11, so that the second connecting intermediate layer 24 and the substrate 11 can be connected through the first connecting layer 161, and the laser generating layer 12 can be well grown through the second connecting layer 162, thereby improving the preparation yield of the laser generating layer 12.

[0164] In a feasible embodiment, in step S460, before the step of patterning the first reflective material layer 26, the photon generating material layer 27, and the second reflective material layer 28, the following steps are further included:

[0165] S462, such as Figure 24 and Figure 25 As shown, a sacrificial material layer 29 is formed on the peripheral side surface of the second reflective material layer 28 and the side surface facing away from the substrate 11 , and the side surface of the first isolation layer 10 facing away from the substrate 11 .

[0166] Specifically, the sacrificial material layer 29 may be made of polysilicon.

[0167] Specifically, the sacrificial material layer 29 is removed before the subsequent preparation of the second electrode 15 , and a space for accommodating the second electrode 15 is formed after the removal.

[0168] S464, such as Figure 26 and Figure 27 As shown, portions of the sacrificial material layer 29 located on a surface of the second reflective material layer 28 facing away from the substrate 11 and a surface of the first isolation layer 10 facing away from the substrate 11 are removed.

[0169] Specifically, in the above steps, a dry etching process may be used to remove part of the sacrificial material layer 29 .

[0170] S466, such as Figure 28 and Figure 29 As shown, a second isolation material layer 30 is formed on the side of the sacrificial material layer 29 , the first isolation layer 10 , and the second reflective material layer 28 facing away from the substrate 11 .

[0171] Specifically, the second isolation material layer 30 may be made of silicon oxide.

[0172] The second isolation material layer 30 is used to reduce the step difference between film layers to facilitate the preparation of subsequent film layers.

[0173] S468, such as Figure 30 and Figure 31 As shown, portions of the second isolation material layer 30, the sacrificial material layer 29, the first reflective material layer 26, the photon generating material layer 27 and the second reflective material layer 28 located on the surface of the second connecting intermediate layer 24 facing away from the substrate 11 are removed to form a second isolation layer 17, a sacrificial layer 31, a first reflective layer 121, a photon generating layer 122 and a second reflective layer 123.

[0174] Specifically, the second isolation material layer 30, the sacrificial material layer 29, the first reflective material layer 26, the photon generating material layer 27 and the second reflective material layer 28, which are located on the side of the second connecting intermediate layer 24 facing away from the substrate 11, can be removed by a chemical mechanical polishing process. The chemical mechanical polishing process only needs to be performed to the side of the second connecting intermediate layer 24 facing away from the substrate 11.

[0175] In a feasible implementation manner, step S468 further includes:

[0176] S472, such as Figures 32 to 37 As shown, the sacrificial layer 31 is removed to form the first receiving space A1.

[0177] Specifically, the sacrificial layer 31 may be removed by dry etching or wet etching. The first receiving space A1 is used to form the second electrode 15.

[0178] S474, such as Figure 38 and Figure 39 As shown, the second connection intermediate layer 24 is thinned to form the second accommodation space A2.

[0179] Specifically, when thinning the second connection intermediate layer 24 , the second connection intermediate layer 24 may be thinned to be flush with the surface of the first isolation layer 10 on the side facing away from the substrate 11 .

[0180] S476, such as Figures 40 to 43 As shown, the second electrode 15 and the first electrode 14 are formed in the first receiving space A1 and the second receiving space A2, respectively.

[0181] Specifically, the first electrode 14 and the second electrode 15 may be formed simultaneously. The first electrode 14 formed in the second receiving space A2 may fill the second receiving space A2, thereby increasing the volume of the first electrode 14 and reducing resistance.

[0182] In the above embodiment, during the process of forming the first electrode 14 and the second electrode 15, the first electrode 14 and the second electrode 15 may have different shapes. The first electrode 14 and the second electrode 15 may each have a multi-segment structure, with different line widths between different segments. The shapes of the first electrode 14 and the second electrode 15 may be defined by forming a multi-layer isolation layer on the side of the laser generating layer 12 facing away from the substrate 11.

[0183] The following is an example of a structure of the first electrode 14 and the second electrode 15:

[0184] Specifically, the first receiving space A1 is formed after the sacrificial layer 31 is removed, and the first receiving space A1 may serve as the first sub-hole 171. The step of removing the sacrificial layer 31 may be performed before or after forming the third isolation material layer 36.

[0185] like Figure 32 and Figure 33 As shown, before removing the sacrificial layer 31, a third isolation material layer 36 is formed on the side of the second isolation layer 17 facing away from the substrate 11, and the third isolation material layer 36 is patterned to form a third isolation layer 18, as shown in FIG. Figure 34 and Figure 35 As shown, it specifically includes: forming a second sub-hole 181 in the third isolation material layer 36, the second sub-hole 181 penetrating the third isolation material layer 36 in a direction perpendicular to the substrate 11. It also includes forming a fifth via hole in the third isolation layer 18, the fifth via hole penetrating the third isolation layer 18 in a direction perpendicular to the substrate 11.

[0186] Then as Figure 36 and Figure 37 As shown, the sacrificial layer 31 is removed to form the first sub-hole 171. Figure 38 and Figure 39 As shown, the first sub-hole 171 and the second sub-hole 181 are connected to form a first through hole, and the first through hole is arranged around the circumference of the second reflective layer 123. Figure 38 and Figure 39 As shown, the second connection intermediate layer 24 is thinned to form the second accommodation space A2. The first reflective layer 121 is annular. After the second connection intermediate layer 2 is thinned, a central hole is formed at the center of the first reflective layer 121. The fifth sub-hole 182 is connected to the central hole to form a second through hole.

[0187] like Figures 40 to 43 As shown, a first electrode and a second electrode are formed. The first electrode and the second electrode can be formed simultaneously. The specific preparation process includes: forming an electrode material layer 37 on the side of the third isolation layer facing away from the substrate, removing the portion of the electrode material layer 37 located on the surface of the third isolation layer facing away from the substrate, thereby forming a first electrode 14 in the second through-hole and a second electrode 15 in the first through-hole. The first electrode 14 includes a third electrode portion 141 located in the central hole and a fourth electrode portion 142 located in the fifth sub-hole 182. The line width of the third electrode portion 141 is smaller than the line width of the fourth electrode portion 142, and the dimension of the third electrode portion 141 in a direction perpendicular to the substrate 11 is larger than the dimension of the fourth electrode portion 142 in a direction perpendicular to the substrate 11. The second electrode 15 includes a first electrode portion 151 located in the first sub-hole 171 and a second electrode portion 152 located in the second sub-hole 181. The line width of the first electrode portion 151 is smaller than the line width of the second electrode portion 152, and the dimension of the first electrode portion 151 in a direction perpendicular to the substrate 11 is larger than the dimension of the second electrode portion 152 in a direction perpendicular to the substrate 11.

[0188] like Figures 44 to 51As shown, the fourth isolation material layer 38 is formed on the side of the second electrode 15 facing away from the substrate 11, and then patterned to form a fourth isolation layer 19 and a fifth isolation layer 20, specifically including: Figure 44 and Figure 45 As shown, a fourth isolation material layer 38 is sequentially formed on the side of the second electrode 15 facing away from the substrate 11. Figure 46 and Figure 47 As shown, a third sub-hole 191 and a sixth sub-hole 192 are formed in the fourth isolation material layer 38 to form a fourth isolation layer 19. The third sub-hole 191 penetrates the fourth isolation layer 19 in a direction perpendicular to the substrate 11 and exposes the second electrode 15. The sixth sub-hole 192 penetrates the fourth isolation layer 19 in a direction perpendicular to the substrate 11 and exposes the first electrode 14.

[0189] like Figure 48 and Figure 49 As shown, a fifth isolation material layer 39 is formed on the side of the fourth isolation material layer 38 facing away from the substrate. Figure 50 and Figure 51 As shown, a fourth sub-hole 201 and a seventh sub-hole 202 are formed in the fifth isolation material layer 39 to form the fifth isolation layer 20. The fourth sub-hole 201 penetrates the fifth isolation layer 20 in a direction perpendicular to the substrate 11, the third sub-hole 191 is connected to the fourth sub-hole 201, the seventh sub-hole 202 penetrates the fifth isolation layer 20 in a direction perpendicular to the substrate 11, and the sixth sub-hole 192 is connected to the seventh sub-hole 202.

[0190] like Figure 52 and Figure 53 As shown, a first trace 32 is formed in the seventh sub-hole 202, and a second trace 33 is formed in the fourth sub-hole 201. The second trace 33 is located in the fourth sub-hole 201 and is connected to the second electrode 15 through the third sub-hole 191. The first trace 32 is located in the seventh sub-hole 202 and is connected to the first electrode 14 through the sixth sub-hole 192.

[0191] Specifically, if Figure 54 and Figure 55 As shown, the method may further include forming a sixth isolation layer on a side of the fifth isolation layer facing away from the substrate.

[0192] In a feasible embodiment, after the first electrode 14 and the second electrode 15 are formed, the preparation method further includes:

[0193] The waveguide layer 13 is formed on the side of the photon generating layer 122 facing away from the substrate 11 , and the waveguide layer 13 is in contact with the photon generating layer 122 .

[0194] Specifically, when forming the waveguide layer 13, as shown in FIG. Figure 56 and Figure 57As shown, a second receiving hole 34 is formed through the isolation layer on the side of the photon generating layer 122 facing away from the substrate 11. The second receiving hole 34 exposes the photon generating layer 122. Figure 58 and Figure 59 As shown, a waveguide material layer 40 is deposited on the side of the last isolation layer facing away from the substrate 11, and the portion of the waveguide material layer 40 outside the second receiving hole 34 is removed, leaving only the portion inside the second receiving hole 34 to form a waveguide layer 13.

[0195] Specifically, in the above embodiment, the second receiving hole 34 may sequentially penetrate the sixth isolation layer 21 , the fifth isolation layer 20 , the fourth isolation layer 19 , and the third isolation layer 18 .

[0196] Specifically, the material of the waveguide layer 13 may include silicon nitride.

[0197] In another feasible embodiment, the waveguide layer 13 may be located between the substrate 11 and the laser generating layer 12. Therefore, in this preparation method, after step S460, the following steps are further included:

[0198] S482, such as Figure 60 As shown, part or all of the first isolation layer 10 is removed to form a waveguide accommodating space between the photon generating layer 122 and the substrate 11 .

[0199] Specifically, the laser generating layer 12 may be used as a mask to remove part or all of the first isolation layer 10 .

[0200] S484, such as Figure 61 As shown, a waveguide layer 13 is formed in the waveguide accommodating space, and one side of the waveguide layer 13 is in contact with the photon generating layer 122 and the other side is in contact with the substrate 11.

[0201] Specifically, the waveguide layer 13 is formed between the laser generating layer 12 and the substrate 11 , and one side of the waveguide layer 13 contacts the photon generating layer 122 and the other side contacts the substrate 11 , thereby transmitting the laser light emitted from the photon generating layer 122 to the substrate 11 .

[0202] S486, such as Figure 61 As shown, the first isolation layer 10 is formed again in the circumferential direction of the waveguide layer 13 .

[0203] Specifically, the first isolation layer 10 needs to be formed again around the waveguide layer 13 to protect the waveguide layer 13 , reduce the step difference between film layers, and block light leakage during the process of being transmitted from the photon generating layer 122 to the substrate 11 .

[0204] In another feasible embodiment, when the laser generating layer 12 includes the extension portion 124, step S400 includes:

[0205] S480, such as Figure 62 and Figure 63 As shown, a first connecting material layer 22 and a second connecting material layer 23 are formed on the surface of one side of the substrate 11, and the second connecting material layer 23 is patterned, the middle area in the second connecting material layer 23 is retained, and the edge area of ​​the second connecting material layer 23 is thinned to form a first connecting layer 161 and a second connecting layer 162. The second connecting layer 162 includes a first part 1621 and a second part 1622. The first part 1621 is located on the side of the first connecting layer 161 away from the substrate 11, and the second part 1622 is located on the side of the first part 1621 away from the substrate 11.

[0206] Specifically, the angle between the side surface of the first portion 1621 facing away from the substrate 11 and the peripheral side surface of the second portion 1622 can be a broken line, an arc angle, or a right angle.

[0207] S500, such as Figure 64 As shown, a first reflective material layer 26, a photon generating material layer 27 and a second reflective material layer 28 are sequentially formed on the peripheral side surface of the second portion 1622, the side surface of the second portion 1622 facing away from the substrate 11, and the side surface of the first portion 1621 facing away from the substrate 11, as shown in FIG. Figure 65 As shown, the first reflective material layer 26, the photon generating material layer 27 and the second reflective material layer 28 are patterned to form a first reflective layer 121, a photon generating layer 122 and a second reflective layer 123 on the peripheral side surface of the second part 1622, and an extension portion 124 is formed on the side surface of the first part 1621 away from the substrate 11, the extension portion 124 includes a first reflective layer extension portion 1241, a photon generating layer extension portion 1242 and a second reflective layer extension portion 1243 stacked in a direction perpendicular to the substrate 11, the first reflective layer extension portion 1241 is continuously arranged with the first reflective layer 121, the photon generating layer extension portion 1242 is continuously arranged with the photon generating layer 122, and the second reflective layer extension portion 1243 is continuously arranged with the second reflective layer 123.

[0208] In the above embodiment, in the laser 1 prepared by the preparation method, the area of ​​the laser generating layer 12 is larger, which can improve the power of the laser 1 and save the volume along the direction parallel to the substrate 11 and along the direction perpendicular to the substrate 11, which is conducive to the miniaturization and improvement of the integration of the laser 1.

[0209] After step S500, the following steps are also included: Figure 66As shown, a second isolation layer 17 is formed. The second isolation layer 17 is disposed circumferentially around the generating layer of the laser 1. The second isolation layer 17 blocks the laser light emitted from the end of the extension 124, changing the laser emission direction to be emitted only from a direction perpendicular to the substrate 11. This combines the high power of the laser 1 with the ease of manufacturing large-scale arrays. The laser 1 has a simple structure and is highly compatible with the silicon substrate 11 process.

[0210] The laser 1 prepared by the preparation method provided in this application can be applied to fields such as vehicle-mounted radar, which helps to improve radar performance and reduce manufacturing costs.

[0211] The above are merely preferred embodiments of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A laser, characterized in that: include: substrate; a laser generating layer, the laser generating layer comprising a first reflecting layer, a photon generating layer, and a second reflecting layer nested in sequence along a direction parallel to the substrate, the laser generating layer being configured to generate laser light; A waveguide layer is arranged with the photon generating layer in a direction perpendicular to the substrate and in contact with the photon generating layer, and the waveguide layer is used to guide the laser out.

2. The laser according to claim 1, characterized in that The waveguide layer is arranged in contact with the substrate; or, the waveguide layer is located on a side of the laser generating layer away from the substrate; A first isolation layer is provided between the laser generating layer and the substrate.

3. The laser according to claim 2, characterized in that The laser further includes a first electrode and a second electrode. A surface of the first reflective layer facing away from the photon generating layer is connected to the first electrode. A surface of the second reflective layer facing away from the photon generating layer is connected to the second electrode.

4. The laser according to claim 3, characterized in that The laser further includes a connection layer, which is located between the substrate and the first electrode. The orthographic projection of the connection layer on the substrate does not overlap with the orthographic projection of the laser generating layer on the substrate.

5. The laser according to claim 4, characterized in that The connection layer includes a first connection layer and a second connection layer. The first connection layer is located on a surface of the substrate facing the laser generating layer, and the second connection layer is located on a surface of the first connection layer facing the laser generating layer.

6. The laser according to claim 1, characterized in that The laser generating layer also includes an extension portion, which includes a first reflective layer extension portion, a photon generating layer extension portion, and a second reflective layer extension portion stacked in a direction perpendicular to the substrate. The first reflective layer extension portion is continuously arranged with the first reflective layer, the photon generating layer extension portion is continuously arranged with the photon generating layer, and the second reflective layer extension portion is continuously arranged with the second reflective layer.

7. The laser according to claim 6, characterized in that The extension portion is located on a side of the laser generating layer close to the substrate, the first reflective layer extension portion is arranged in contact with the substrate, and the waveguide layer is located on a side of the laser generating layer away from the substrate.

8. The laser according to claim 7, characterized in that The orthographic projection of the second reflective layer extension on the substrate is located within the orthographic projection of the first reflective layer extension on the substrate, the orthographic projection of the photon generating layer extension on the substrate is located within the orthographic projection of the first reflective layer extension on the substrate, the first reflective layer extension includes a protruding portion, the orthographic projection of the protruding portion on the substrate exceeds the orthographic projection of the photon generating layer extension on the substrate, and the protruding portion is located at an end of the first reflective layer extension away from the first reflective layer.

9. The laser according to claim 8, characterized in that The laser further includes a first electrode and a second electrode. A surface of the protruding portion facing away from the substrate is connected to the first electrode. A surface of the second reflective layer extension portion facing away from the substrate is connected to the second electrode.

10. The laser according to claim 9, characterized in that The laser further includes a connection layer located between the substrate, the first reflective layer, and the first reflective layer extension.

11. The laser according to claim 10, characterized in that The connecting layer includes a first connecting layer and a second connecting layer, the first connecting layer is located on the side of the substrate facing the laser generating layer, the second connecting layer includes a first part and a second part, the first part is located on the side of the first connecting layer facing away from the substrate, the second part is located on the side of the first part facing away from the substrate, the first part is in contact with the extension of the first reflecting layer, and the second part is in contact with the side of the first reflecting layer facing away from the photon generating layer.

12. The laser according to claim 6, characterized in that The laser further includes a second isolation layer disposed around the circumference of the laser generating layer.

13. A method for preparing a laser, characterized in that: include: providing a substrate; forming a laser generating layer on one side of the substrate, the laser generating layer comprising a first reflecting layer, a photon generating layer, and a second reflecting layer nested in sequence along a direction parallel to the substrate, the laser generating layer being used to generate laser light; A waveguide layer is formed. The waveguide layer and the photon generating layer are arranged in a direction perpendicular to the substrate and in contact with the photon generating layer. The waveguide layer is used to guide the laser out.

14. The method for preparing a laser according to claim 13, wherein: The step of forming a laser generating layer on one side of the substrate comprises: forming a first connection material layer and a second connection material layer on a surface of one side of the substrate, patterning the layers, and removing portions of the first connection material layer and the second connection material layer to form a first connection layer and a second connection intermediate layer sequentially arranged in a direction away from the substrate; forming a first isolation material layer on a side of the second connection intermediate layer facing away from the substrate, and performing a thinning process on the second connection intermediate layer to form a first isolation layer, wherein the first isolation layer wraps around the circumference of the first connection layer and exposes part or all of the circumference of the second connection intermediate layer; A first reflective material layer, a photon generating material layer, and a second reflective material layer are sequentially formed on the peripheral side surface of the second connecting intermediate layer and the side surface of the second connecting intermediate layer facing away from the substrate, and the first reflective material layer, the photon generating material layer, and the second reflective material layer are patterned, and portions of the first reflective material layer, the photon generating material layer, and the second reflective material layer located on the side surface of the second connecting intermediate layer facing away from the substrate are removed to form the first reflective layer, the photon generating layer, and the second reflective layer.

15. The method for preparing a laser according to claim 14, characterized in that: Before the step of patterning the first reflective material layer, the photon generating material layer and the second reflective material layer, the method further includes: forming a sacrificial material layer on the peripheral side surface and the side surface facing away from the substrate of the second reflective material layer and the side surface facing away from the substrate of the first isolation layer; removing a portion of the sacrificial material layer located on a surface of the second reflective material layer facing away from the substrate and a surface of the first isolation layer facing away from the substrate; forming a second isolation material layer on a side of the sacrificial material layer, the first isolation layer, and the second reflective material layer facing away from the substrate; Portions of the second isolation material layer, the sacrificial material layer, the first reflective material layer, the photon generating material layer and the second reflective material layer located on the surface of the second connecting intermediate layer facing away from the substrate are removed to form a second isolation layer, the sacrificial layer, the first reflective layer, the photon generating layer and the second reflective layer.

16. The method for preparing a laser according to claim 15, characterized in that: Also includes: removing the sacrificial layer to form a first accommodation space; performing a thinning process on the second connecting intermediate layer to form a second accommodation space; A second electrode and a first electrode are formed in the first receiving space and the second receiving space, respectively.

17. The method for preparing a laser according to claim 16, characterized in that: Also includes: The waveguide layer is formed on a side of the photon generating layer facing away from the substrate, and the waveguide layer is in contact with the photon generating layer.

18. The method for preparing a laser according to claim 14, characterized in that: Also includes: removing part or all of the first isolation layer to form a waveguide accommodating space between the photon generating layer and the substrate; forming the waveguide layer in the waveguide accommodating space, wherein one side of the waveguide layer contacts the photon generating layer and the other side contacts the substrate; A first isolation layer is formed again in the circumferential direction of the waveguide layer.

19. The method for preparing a laser according to claim 13, wherein: The step of forming a laser generating layer on one side of the substrate comprises: forming a first connection material layer and a second connection material layer on a surface of one side of the substrate, patterning the second connection material layer, retaining a middle region of the second connection material layer, and thinning an edge region of the second connection material layer to form a first connection layer and a second connection layer, wherein the second connection layer includes a first portion and a second portion, the first portion being located on a side of the first connection layer facing away from the substrate, and the second portion being located on a side of the first portion facing away from the substrate; A first reflective material layer, a photon generating material layer, and a second reflective material layer are sequentially formed on the peripheral side surface of the second part, the side surface of the second part facing away from the substrate, and the side surface of the first part facing away from the substrate, and the first reflective material layer, the photon generating material layer, and the second reflective material layer are patterned to form the first reflective layer, the photon generating layer, and the second reflective layer on the peripheral side surface of the second part, and an extension portion is formed on the side surface of the first part facing away from the substrate, the extension portion includes a first reflective layer extension portion, a photon generating layer extension portion, and a second reflective layer extension portion stacked in a direction perpendicular to the substrate, the first reflective layer extension portion is continuously arranged with the first reflective layer, the photon generating layer extension portion is continuously arranged with the photon generating layer, and the second reflective layer extension portion is continuously arranged with the second reflective layer.

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