一种少层石墨烯带隙和光电特性调控方法
By applying pressure to graphene samples under quasi-hydrostatic conditions and performing in-situ Raman spectroscopy and photocurrent response testing, the problem of limited bandgap tuning range of graphene was solved, and the effective opening of the bandgap and controllable adjustment of photoelectric properties were achieved.
CN120717462BActive Publication Date: 2026-07-17ANQING NORMAL UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ANQING NORMAL UNIV
- Filing Date
- 2025-07-23
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing methods for controlling the bandgap of graphene have limited scope and are prone to damaging the material structure.
Method used
The few-layer graphene sample to be tested was placed in a diamond anvil cell, and pressure was applied under quasi-hydrostatic conditions through the diamond anvil cell. In-situ Raman spectroscopy and photocurrent response tests were then performed to obtain pressure-related photoelectric performance parameters.
Benefits of technology
It achieves effective opening of the electronic bandgap of graphene, maintains the material's excellent conductivity, and does not require the introduction of impurities or chemical modifications; the process is simple and controllable.
✦ Generated by Eureka AI based on patent content.
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Figure CN120717462B_ABST
Abstract
本发明公开了一种少层石墨烯带隙和光电特性调控方法，涉及光电子技术领域。调控方法通过将待测少层石墨烯样品放置于金刚石对顶砧内通过金刚石对顶砧在准静水压条件下对待测少层石墨烯样品施加压力；在加载压力过程中进行原位拉曼光谱检测，基于原位拉曼光谱判断待测少层石墨烯样品的结构演化；在光照条件下测试待测少层石墨烯样品的光电流响应与电输运性能变化，得到压力相关的光电性能参数。本发明利用高压手段实现对少层石墨烯电子带隙的有效打开，且本发明的高压调控手段为物理调控，无需引入杂质或化学修饰，过程简单、可控性强。
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