A highly stable perovskite quantum dot diffusion plate and its preparation method
Patent Information
- Application Number
- CN202511219125.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-28
- Publication Date
- 2026-07-03
- Estimated Expiration
- 2045-08-28
AI Technical Summary
Perovskite quantum dots have poor chemical and environmental stability, and are difficult to maintain good stability under conditions such as humidity, oxygen, strong light, and heat, which limits their long-term application in practical devices.
A SiO2@NH2 composite shell was constructed on the surface of perovskite quantum dots to form a multi-protection mechanism, including an inorganic silicon-oxygen network, organic amino segments, an ionic liquid protective layer, and a MOF crystal shell, thereby enhancing stability.
This improves the stability of perovskite quantum dot diffusers in harsh environments, effectively blocking external corrosion and inhibiting ion migration, while maintaining excellent optical performance.
Smart Images

Figure CN120718432B_ABST
Abstract
Citation Information
Patent Citations
Quantum dot diffusion plate with heat insulation performance and preparation method and application thereof
CN115320194A
High-stability quantum dot diffusion plate and preparation method thereof
CN115806712A