ITO conductive film
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-01
- Publication Date
- 2026-08-14
AI Technical Summary
ITO材料具有导电性能稳定的优点,因此手写板的ITO导电膜会选择ITO材料作为导电层的材料,但是ITO材料特定的折射率(较高1.9nd左右)原因,导致ITO导电膜贴合后会出现发蓝的问题
[0017]与现有技术相比,本发明的ITO导电膜,通过对膜层结构中各个层的选择以及设计,使整个ITO导电膜的透过率a*的绝对值小于0.2、其透过率b*的绝对值小于0.4、以及其刻蚀前后的反射率差值△R的绝对值小于0.15%,从而避免ITO导电膜出现发蓝的问题。
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Figure CN120748811B_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of ITO conductive film technology, and specifically relates to an ITO conductive film. Background Technology
[0002] Due to the unique nature of their display method (reflective display), handwriting tablets generally require anti-glare properties. Current technology uses EDOT, a polymer with low reflectivity, as the conductive layer. However, the stability and conductivity of EDOT change significantly over time, potentially causing the product to malfunction. ITO, on the other hand, has the advantage of stable conductivity, making it the preferred material for the conductive film in handwriting tablets. However, due to ITO's specific refractive index (around 1.9nd), the ITO conductive film may exhibit a bluish tint after lamination.
[0003] The information disclosed in this background section is intended only to enhance the understanding of the overall background of the invention and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Summary of the Invention
[0004] The purpose of this invention is to provide an ITO conductive film that can avoid the problem of blue discoloration in ITO conductive films.
[0005] To achieve the above objectives, a specific embodiment of the present invention provides the following technical solution: an ITO conductive film, comprising a substrate layer, the substrate layer comprising a PET substrate and a low-folding bottom coating and a high-folding bottom coating disposed on opposite sides of the PET substrate, wherein a first coating layer, an optical matching layer, a silicon dioxide coating and an ITO conductive layer are sequentially stacked on the high-folding bottom coating side, the refractive index of the first coating layer is 1.63~1.68, and the refractive index of the optical matching layer is 2.5~2.6;
[0006] Wherein, the transmittance a of the ITO conductive film * The absolute value of b is less than 0.2, indicating that the transmittance b of the ITO conductive film... * The absolute value is less than 0.4, and the absolute value of the reflectivity difference ΔR before and after etching of the ITO conductive film is less than 0.15%.
[0007] In one or more embodiments of the present invention, the refractive index of the high-refractive-index coating is 1.63~1.65, and the thickness of the high-refractive-index coating is 40~60 nm;
[0008] The low-refractive-index undercoat has a refractive index of 1.52-1.55 and a thickness of 40-60 nm.
[0009] In one or more embodiments of the present invention, the thickness of the first coating layer is 800~1000nm.
[0010] In one or more embodiments of the present invention, the optical matching layer is a nickel-chromium alloy layer, the thickness of the optical matching layer is 1~2nm, wherein the nickel content in the nickel-chromium alloy layer is 70wt%~80wt%.
[0011] In one or more embodiments of the present invention, the thickness of the silicon dioxide coating is 20~30nm.
[0012] In one or more embodiments of the present invention, the thickness of the ITO conductive layer is 18~25nm, and the impedance of the ITO conductive layer is 130~200Ω.
[0013] In one or more embodiments of the present invention, the ITO conductive film further includes an anti-reflection composite layer disposed on the low-reflection undercoating.
[0014] In one or more embodiments of the present invention, the anti-reflection composite layer includes a second coating layer, a third coating layer and a fourth coating layer sequentially stacked on the low-refractive-index undercoat side, wherein the refractive index of the second coating layer of the low-refractive-index undercoat is 1.53~1.57, the refractive index of the third coating layer is 1.65~1.68 and the refractive index of the fourth coating layer is 1.38~1.40.
[0015] In one or more embodiments of the present invention, the material of the fourth coating layer includes a resin material and an AF antifouling material.
[0016] In one or more embodiments of the present invention, the thickness of the second coating layer is 3.5~4μm, the thickness of the third coating layer is 90~110nm, and the thickness of the fourth coating layer is 90~110nm.
[0017] Compared with the prior art, the ITO conductive film of the present invention, through the selection and design of each layer in the film structure, increases the overall transmittance α of the ITO conductive film. * The absolute value is less than 0.2, and its transmittance b * The absolute value of the reflectance is less than 0.4, and the absolute value of the difference in reflectance before and after etching, ΔR, is less than 0.15%, thereby avoiding the problem of blueing of the ITO conductive film. Attached Figure Description
[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 This is a schematic diagram of the structure of an ITO conductive film in one example of the present invention;
[0020] Figure 2 This is a schematic diagram of the structure of the ITO conductive film in another example of the present invention;
[0021] Figure 3 This is a data graph showing the reflectance curves of the ITO conductive film before and after etching in an example of the present invention.
[0022] Figure 4 This is a data graph showing the reflectance curves of the ITO conductive film before and after etching in Embodiment 1 of the present invention;
[0023] Figure 5 This is a data graph showing the reflectance curves of the ITO conductive film before and after etching in Embodiment 2 of the present invention;
[0024] Figure 6 This is a data graph showing the reflectance curves of the ITO conductive film before and after etching in Embodiment 3 of the present invention;
[0025] Figure 7 This is a data graph showing the reflectance curves of the ITO conductive film before and after etching in Embodiment 4 of the present invention;
[0026] Figure 8 This is a data graph showing the reflectance curves of the ITO conductive film before and after etching in Comparative Example 1 of the present invention.
[0027] Figure 9 This is a data graph showing the reflectance curves of the ITO conductive film before and after etching in Comparative Example 2 of the present invention.
[0028] Figure 10 This is a data graph showing the reflectance curves of the ITO conductive film before and after etching in Comparative Example 3 of the present invention.
[0029] Figure 11 This is a data graph showing the reflectance curves of the ITO conductive film before and after etching in Comparative Example 4 of this invention.
[0030] Explanation of key figure labels:
[0031] 1. Substrate layer; 11. PET substrate; 12. High-reflection bottom coating; 13. Low-reflection bottom coating; 2. First coating layer; 3. Optical matching layer; 4. Silica coating; 5. ITO conductive layer; 6. Anti-reflective composite layer; 61. Second coating layer; 62. Third coating layer; 63. Fourth coating layer. Detailed Implementation
[0032] To enable those skilled in the art to better understand the technical solutions in this disclosure, the technical solutions in the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this disclosure.
[0033] like Figure 1 As shown, an example of the ITO conductive film of the present invention includes a substrate layer 1, which includes a PET substrate 11 and a low-refractive-index coating 13 and a high-refractive-index coating 12 disposed on opposite sides of the PET substrate 11. A first coating layer 2, an optical matching layer 3, a silicon dioxide coating 4, and an ITO conductive layer 5 are sequentially stacked on the high-refractive-index coating 12 side. The refractive index of the first coating layer 2 is 1.63~1.68, and the refractive index of the optical matching layer 3 is 2.5~2.6. The transmittance a of the ITO conductive film is... * The absolute value of b is less than 0.2, indicating the transmittance of the ITO conductive film. * The absolute value is less than 0.4, and the absolute value of the reflectivity difference ΔR before and after etching the ITO conductive film is less than 0.15%.
[0034] In this context, it is understandable that in the CIE (International Commission on Illumination) standard colorimetric system, a * and b * It is CIE1976 L * a * b * The core coordinate parameters of the CIELAB color space are used to quantify the perceptual properties of color. The transmittance 'a' in this application... * And transmittance b* is the same as a in the above. * and b * L * a * b * This creates a three-dimensional space where any color can be determined by coordinates (L). * a * b * (Accurate representation)
[0035] a * The value range is -128 (pure green) to +127 (pure red); b * The value range is -128 (pure blue) to +127 (pure yellow); L * (Brightness axis) independent of a * and b * The value ranges from 0 (black) to 100 (white), describing the lightness or darkness of a color. Therefore, when a... *The absolute value and b * When the absolute value of is close to 0, the color of the entire film will be neutral, avoiding a bluish tint.
[0036] In a specific example, such as Figure 3 As shown, within the range of 400~700nm, the reflectance curves of the ITO conductive film before and after etching are represented by the blue line (before etching) and the red line (after etching). Typically, the two curves intersect at only one point within the 400~700nm range (this intersection point most likely occurs between 450~600nm). Integrating the reflectance difference between the two curves before the intersection point yields the value of S1, i.e., the absolute value of S1 (|S1|) is the area between the two curves and the vertical axis within the 400~700nm range and before the intersection point. Integrating the reflectance difference between the two curves after the intersection point yields the value of S2, i.e., the absolute value of S2 (|S2|) is the area between the two curves and the vertical axis within the 400~700nm range and after the intersection point. The reflectance difference ΔR is the absolute value of the difference between the two |S1| and |S2|. The smaller the absolute value of △R, the smaller the color difference of the entire film, and the less perceptible it is to the human eye. Furthermore, when the absolute value of △R is smaller, it will also reduce the degree of blueness of the entire film as perceived by the human eye to a certain extent.
[0037] Transmission rate a * and transmittance b * The value of ΔR determines whether the film itself has a bluish tint; while ΔR reduces the human eye's perception of blue. For example, when the overall tint of the film is a very pale blue, the smaller the absolute value of ΔR, the lower the human eye's perception of the pale blue, causing the human eye to be unable to identify it as blue and perceive it as a neutral tint; the larger the absolute value of ΔR, the greater the human eye's perception of blue, causing the human eye to clearly perceive the pale blue.
[0038] In special cases, where two curves intersect at multiple points within the range of 400-700nm, the intersection point appearing between 450-600nm is used to determine the desired intersection point, and the other intersection points are ignored.
[0039] Specifically, the PET substrate 11 is a film made of existing PET material. The substrate layer 1 can be selected from existing PET films on the market as the PET substrate 11. Then, a low-folding bottom coating 13 and a high-folding bottom coating 12 are respectively prepared on the two opposite sides of the PET substrate 11. Alternatively, the substrate layer 1 can be purchased directly from commercially available PET substrates 11 that come with low-folding bottom coating 13 and high-folding bottom coating 12, such as the UH4V and UH13 substrates produced by Toray Industries.
[0040] Preferably, the PET substrate 11 has a thickness of 125~188μm, the high-refractive-index base coating 12 has a thickness of 40~60nm and a refractive index of 1.63~1.65, the low-refractive-index base coating 13 has a thickness of 40~60nm and a refractive index of 1.52~1.55.
[0041] The thickness of the first coating layer 2 is 800~1000nm. The first coating layer 2 can be considered as a conventional resin layer or a conventional hardened layer, and is formed by coating with a corresponding coating liquid. For example, the raw material of the first coating layer 2 is the commercially available Halima UVH-D-ZR-165-32 coating liquid.
[0042] The optical matching layer 3 is a nickel-chromium alloy layer with a refractive index of 2.5~2.6 and a thickness of 1~2 nm. The nickel-chromium alloy can be a commercially available nickel-chromium alloy, with nickel accounting for 70%~80% and chromium accounting for 20%~30% by mass percentage. Its function is to introduce a film structure with a higher refractive index, so that the first coating layer 2, the optical matching layer 3, and the ITO conductive layer 5 form an approximation.
[0043] The silicon dioxide coating 4 is made of silicon dioxide, with a thickness of 20-30 nm and a refractive index typically around 1.45. It can be deposited onto the optical matching layer 3 by sputtering to form the silicon dioxide coating 4.
[0044] The ITO conductive layer 5 is made of common ITO (indium tin oxide) material, with a thickness of 18~25nm and an impedance of 130~200Ω. It can be formed on the silicon dioxide coating 4 by electroplating.
[0045] like Figure 2 As shown in another example, the low-reflection base coating 13 is provided with an anti-reflection composite layer 6, which serves to reduce reflectivity.
[0046] The anti-reflection composite layer 6 includes a second coating layer 61, a third coating layer 62, and a fourth coating layer 63 sequentially stacked on the low-refractive-index undercoat layer 13. The refractive index of the second coating layer 61 is 1.53~1.57, the refractive index of the third coating layer 62 is 1.65~1.68, and the refractive index of the fourth coating layer 63 is 1.38~1.40. Through the design of the second coating layer 61, the third coating layer 62, and the fourth coating layer 63, the reflectivity of the entire ITO conductive film is reduced. The low-high-low structure of the film layers further reduces the overall reflection of the film surface.
[0047] The thickness of the second coating layer 61 is 3.5~4μm, the thickness of the third coating layer 62 is 90~110nm, and the thickness of the fourth coating layer 63 is 90~110nm.
[0048] The second coating layer 61 can be formed by coating with Arakawa CHT-X1 coating solution, and the third coating layer 62 can be formed by coating with Toyo Ink TYZ68-UVR01-CN coating solution. The second coating layer 61 and the third coating layer 62 can also be formed by other common coating solutions, as long as the requirements for refractive index and transparency are met. The refractive indices of the second coating layer 61, the third coating layer 62, and the fourth coating layer 63 are low, high, and low, respectively, thereby reducing reflectivity.
[0049] Preferably, the material of the fourth coating layer 63 includes resin material and AF anti-fouling material. That is, the fourth coating layer 63 can not only work with the second coating layer 61 and the third coating layer 62 to reduce reflectivity, but also, since the material of the fourth coating layer 63 includes AF (Anti Finger Print) anti-fouling material, which can also be called anti-fingerprint material or anti-fouling material, the fourth coating layer 63 can also play the role of anti-fouling and anti-fingerprint.
[0050] The resin material in the fourth coating layer 63 can be Arakawa SL045, Arakawa SL062, or other coating liquids, and the AF antifouling material is Lien A-2505LR. The resin material in the fourth coating layer 63 can also be other common coating liquids, as long as they meet the requirements for refractive index and transparency. Similarly, the AF antifouling material in the fourth coating layer 63 can also be other common antifouling coating liquids, as long as they meet the requirements for antifouling and transparency.
[0051] The ITO conductive film of the present invention will be described in detail below with reference to specific embodiments and comparative examples.
[0052] Example 1
[0053] Obtain as Figure 1The structure shown has a PET substrate layer (UH4V manufactured by Toray Industries) with a thickness of 125 μm, a low-refractive-index undercoat (refractive index 1.55, thickness 60 nm) and a high-refractive-index undercoat (refractive index 1.65, thickness 60 nm), with the high-refractive-index undercoat bonded to the first coating layer. The first coating layer is formed by applying Halima UVH-D-ZR-165-32 coating solution onto the high-refractive-index undercoat, with a thickness of 900 nm and a refractive index of 1.6. 5; The optical matching layer is a nickel-chromium alloy formed on the first coating layer by sputtering process. The nickel-chromium alloy contains 70% nickel and 30% chromium, and the thickness of the optical matching layer is 1.5 nm; The silicon dioxide coating is a coating formed on the optical matching layer by sputtering process. The thickness of the silicon dioxide coating is 25 nm; The ITO conductive layer is a conductive layer formed on the silicon dioxide coating by sputtering process. The thickness of the ITO conductive layer is 19 nm, thus obtaining an ITO conductive film.
[0054] Example 2
[0055] Obtain as Figure 1 The structure shown has a PET substrate layer (UH4V manufactured by Toray Industries) with a thickness of 125 μm, a low-refractive-index undercoat (refractive index 1.55, thickness 60 nm) and a high-refractive-index undercoat (refractive index 1.65, thickness 60 nm), with the high-refractive-index undercoat bonded to the first coating layer. The first coating layer is formed by applying Halima UVH-D-ZR-165-32 coating liquid onto the high-refractive-index undercoat, with a thickness of 1000 nm and a refractive index of 1. 0.65; The optical matching layer is a nickel-chromium alloy formed on the first coating layer by sputtering process, in which nickel accounts for 80% and chromium accounts for 20%, and the thickness of the optical matching layer is 2nm; The silicon dioxide coating is a coating formed on the optical matching layer by sputtering process, and the thickness of the silicon dioxide coating is 30nm; The ITO conductive layer is a conductive layer formed on the silicon dioxide coating by sputtering process, and the thickness of the ITO conductive layer is 25nm, thus obtaining an ITO conductive film.
[0056] Example 3
[0057] Obtain as Figure 2The structure shown has a PET substrate layer (UH4V manufactured by Toray Industries) with a thickness of 125 μm, a low-refractive-index undercoat (refractive index 1.55, thickness 60 nm) and a high-refractive-index undercoat (refractive index 1.65, thickness 60 nm), with the high-refractive-index undercoat bonded to the first coating layer. The first coating layer is formed by applying Halima UVH-D-ZR-165-32 coating solution onto the high-refractive-index undercoat, with a thickness of 900 nm and a refractive index of 1.65. The optical matching layer is a nickel-chromium alloy formed on the first coating layer using a sputtering process, with nickel accounting for 70% and chromium accounting for 30%, and a thickness of 1.5 nm. The silicon dioxide coating is formed on the optical matching layer using a sputtering process. The thickness is 25nm; the ITO conductive layer is a conductive layer formed on a silicon dioxide coating by sputtering ITO material, and the thickness of the ITO conductive layer is 19nm; the second coating layer is formed by coating Arakawa CHT-X1 coating liquid on a low-refractive-index base layer, the thickness of the second coating layer is 3.5μm, and the refractive index of the second coating layer is 1.55; the third coating layer is formed by coating Toyo Ink TYZ68-UVR01-CN coating liquid on the second coating layer, the thickness of the third coating layer is 100nm, and the refractive index of the third coating layer is 1.68; the fourth coating layer is formed by coating Arakawa SL045 and Lien A-2505LR uniformly mixed coating liquid on the third coating layer, the thickness of the fourth coating layer is 100nm, and the refractive index of the fourth coating layer is 1.4, thus obtaining the ITO conductive film.
[0058] Example 4
[0059] Obtain as Figure 2The structure shown has a PET substrate layer (UH4V manufactured by Toray Industries) with a thickness of 125 μm, a low-refractive-index undercoat (refractive index 1.55, thickness 60 nm) and a high-refractive-index undercoat (refractive index 1.65, thickness 60 nm), with the high-refractive-index undercoat bonded to the first coating layer. The first coating layer is formed by applying Halima UVH-D-ZR-165-32 coating solution onto the high-refractive-index undercoat, with a thickness of 900 nm and a refractive index of 1.65. The optical matching layer is a nickel-chromium alloy formed on the first coating layer using a sputtering process, with nickel accounting for 70% and chromium accounting for 30%, and a thickness of 1.5 nm. The silicon dioxide coating is formed on the optical matching layer using a sputtering process. The thickness is 30nm; the ITO conductive layer is a conductive layer formed on a silicon dioxide coating by sputtering ITO material, and the thickness of the ITO conductive layer is 25nm; the second coating layer is formed by coating Arakawa CHT-X1 on a low-refractive-index base layer, the thickness of the second coating layer is 4μm, and the refractive index of the second coating layer is 1.55; the third coating layer is formed by coating Toyo Ink TYZ68-UVR01-CN on the second coating layer, the thickness of the third coating layer is 110nm, and the refractive index of the third coating layer is 1.68; the fourth coating layer is formed by coating Arakawa SL045 and Lien A-2505LR evenly mixed on the third coating layer, the thickness of the fourth coating layer is 110nm, and the refractive index of the fourth coating layer is 1.4, thus obtaining the ITO conductive film.
[0060] Comparative Example 1
[0061] It is basically the same as Example 3, except that there is no optical matching layer in the ITO conductive film.
[0062] Comparative Example 2
[0063] The process is basically the same as in Example 1, except that the optical matching layer is replaced with a niobium pentoxide layer (the niobium pentoxide layer is a coating formed by magnetron sputtering, i.e., dry film formation).
[0064] Comparative Example 3
[0065] It is basically the same as Example 3, except that the refractive index of the first coating layer is 1.55 and the coating liquid is Arakawa CHT-X1.
[0066] Comparative Example 4
[0067] It is basically the same as Example 3, except that the refractive index of the optical matching layer is 1.55 and its material is silicon nitride (Si3N4).
[0068] The conductive films in Examples 1-4 and Comparative Examples 1-4 were subjected to the following performance tests:
[0069] (1) Reflectivity test: The Olympus tester was used for the test;
[0070] (2) Transmittance a * b * Y-value test: Konica CM-700D was used for testing;
[0071] (3) Hardness test: The pencil hardness of the wear-resistant and anti-fouling hardened film was tested according to the test standard of ASTM D3363;
[0072] (4) Water droplet angle test: The water droplet angle tester was used for the test;
[0073] (5) Abrasion resistance test: The abrasion resistance test of steel wool shall be conducted in accordance with the national standard ASTM D4157.
[0074] The results are shown in Tables 1 and 2 below. Figures 4-11 The data shown.
[0075] Table 1
[0076]
[0077] It should be noted that the "front side" in Table 1 refers to the side of the high-fold bottom coating on the PET substrate, and the ΔR value in Table 1 is obtained through... Figures 4-11 It is calculated from the reflectance curve in the image.
[0078] As shown in Table 1, the conductive films in Examples 1-4 are all neutral in tone, while the conductive films in Comparative Examples 1, 3, and 4 are bluish. This demonstrates that the present invention solves the bluish problem of the conductive film through the overall design of the conductive film and the synergistic effect between its layers, particularly through the selection of the refractive index of the first coating layer, the refractive index of the optical matching layer, and the silicon dioxide coating. Although the conductive film in Comparative Example 2 is also neutral in tone, it uses a dry coating process, which has disadvantages such as slow processing speed, low efficiency, and high cost, and also differs from the conceptual approach of the present invention.
[0079] Table 2
[0080]
[0081] It should be noted that the "back side" in Table 2 refers to the side with the low-reflection bottom coating on the PET substrate. As can be seen from the hardness and abrasion resistance data in Table 2, the anti-reflective composite layer can improve the hardness and abrasion resistance of the conductive film of this invention. The large Y value (visual reflectance) in Table 2 shows that the anti-reflective composite layer effectively reduces the reflectance of the entire conductive film.
[0082] It will be apparent to those skilled in the art that this disclosure is not limited to the details of the exemplary embodiments described above, and that this disclosure can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of this disclosure is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within this disclosure. No reference numerals in the claims should be construed as limiting the scope of the claims.
[0083] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
Claims
1. An ITO conductive film, characterized in that, The material includes a substrate layer comprising a PET substrate and a low-folding bottom coating and a high-folding bottom coating disposed on opposite sides of the PET substrate. A first coating layer, an optical matching layer, a silicon dioxide coating, and an ITO conductive layer are sequentially stacked on the high-folding bottom coating side. The refractive index of the first coating layer is 1.63~1.68, and the refractive index of the optical matching layer is 2.5~2.
6. Wherein, the transmittance a of the ITO conductive film * The absolute value of b is less than 0.2, indicating that the transmittance b of the ITO conductive film... * The absolute value of the reflectance difference ΔR before and after etching of the ITO conductive film is less than 0.4, and the absolute value of the reflectance difference ΔR before and after etching is less than 0.15%. The high-refractive-index coating has a refractive index of 1.63~1.65 and a thickness of 40~60 nm; the low-refractive-index coating has a refractive index of 1.52~1.55 and a thickness of 40~60 nm; the first coating layer has a thickness of 800~1000 nm; the optical matching layer is a nickel-chromium alloy layer with a thickness of 1~2 nm, wherein the nickel content in the nickel-chromium alloy layer is 70wt%~80wt%.
2. The ITO conductive film according to claim 1, characterized in that, The thickness of the silicon dioxide coating is 20~30nm.
3. The ITO conductive film according to claim 1, characterized in that, The thickness of the ITO conductive layer is 18~25nm, and the impedance of the ITO conductive layer is 130~200Ω.
4. The ITO conductive film according to claim 1, characterized in that, The ITO conductive film also includes an anti-reflection composite layer disposed on the low-reflection undercoat.
5. The ITO conductive film according to claim 4, characterized in that, The anti-reflective composite layer includes a second coating layer, a third coating layer, and a fourth coating layer sequentially stacked on the low-refractive base layer side. The refractive index of the second coating layer is 1.53~1.57, the refractive index of the third coating layer is 1.65~1.68, and the refractive index of the fourth coating layer is 1.38~1.
40.
6. The ITO conductive film according to claim 5, characterized in that, The materials of the fourth coating layer include resin materials and AF antifouling materials.
7. The ITO conductive film according to claim 5, characterized in that, The thickness of the second coating layer is 3.5~4μm, the thickness of the third coating layer is 90~110nm, and the thickness of the fourth coating layer is 90~110nm.
Citation Information
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