Double-layer substrate circuit module adopting non-sealed hybrid high integration
CN120751585AActive Publication Date: 2025-10-03XIAN GUANGQIN ELECTRONIC TECH CO LTD
Patent Information
- Application Number
- CN202511212885.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-28
- Publication Date
- 2025-10-03
- Estimated Expiration
- 2045-08-28
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Figure CN120751585A_ABST
Abstract
The invention relates to the technical field of integrated circuits, in particular to a non-sealed hybrid highly-integrated double-layer substrate circuit module which comprises an upper substrate and a lower substrate, components are welded to the upper substrate and the lower substrate respectively, the upper substrate serves as a pulse signal layer, and the lower substrate serves as a power layer. The circuit printing thickness of the pulse signal layer is smaller than that of the power layer; and updating the layout design of the components in the lower substrate according to the interference of the temperature distribution of the lower substrate on the pulse signal in the upper substrate when the circuit module works. The problem that high-frequency pulse signals and high-power electric signals are difficult to integrate is further solved, and the stability of the circuit module is improved.
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Citation Information
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