Solar cell, electric device, and power generation device
Patent Information
- Application Number
- CN202411244213.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-05
- Publication Date
- 2026-09-11
- Estimated Expiration
- 2044-09-05
AI Technical Summary
[0003]金属氧化物是制备太阳能电池载流子传输层常用的材料,然而金属氧化物表面的高价态金属阳离子易导致钙钛矿材料中的A位阳离子空缺,导致钙钛矿材料表面缺陷过多,增加吸光层界面处的电荷复合,降低太阳能电池的光电转化效率
[0064] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application.
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Figure CN120769649B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of solar cell device technology, specifically to a solar cell, an electrical device, and a power generation device. Background Technology
[0002] With the large-scale development and utilization of non-renewable energy sources such as coal and oil, their reserves can no longer meet the needs of various industries, including agriculture and manufacturing. Therefore, renewable energy is gradually becoming one of the alternative energy sources to non-renewable energy sources to promote social and industrial development. Among these, solar cell devices are widely used due to their green and environmentally friendly characteristics, as well as their ability to output electricity when exposed to sunlight.
[0003] Metal oxides are commonly used materials for fabricating carrier transport layers in solar cells. However, the high-valence metal cations on the surface of metal oxides can easily lead to A-site cation vacancies in perovskite materials, resulting in excessive surface defects. This increases charge recombination at the light-absorbing layer interface and reduces the photoelectric conversion efficiency of solar cells. Therefore, it is urgent to provide a passivation layer between the carrier transport layer and the light-absorbing layer to improve the photoelectric conversion efficiency of solar cells. Summary of the Invention
[0004] This application is made in view of the above-mentioned issues, and its purpose is to provide a passivation layer between the carrier transport layer and the light-absorbing layer containing metal oxides in a solar cell to improve the photoelectric conversion efficiency and stability of the solar cell.
[0005] A first aspect of this application provides a solar cell comprising a first carrier transport layer, a passivation layer, and a light-absorbing layer stacked sequentially, wherein the passivation layer comprises a passivating agent as shown in Formula I.
[0006]
[0007] Where A includes S or P;
[0008] R1, R2, and R3 each independently include one of hydrogen or a C1-C4 alkyl group; R3 is present when A is P; R3 is absent when A is S.
[0009] R4 includes one of C6-C10 arylene, C6-C10 heteroarylene, and C1-C6 alkylene;
[0010] R5 includes an oxyacid group or an oxyacid salt group;
[0011] X - It is a negative monovalent ion.
[0012] The passivating agent contains thionium or phosphonium ions, which are less prone to deprotonation. In addition, the oxyacid groups or oxyacid salt groups in the passivating agent compound are beneficial for passivating surface defects of the first carrier transport layer and reducing charge recombination at the interface, thereby improving the photoelectric conversion efficiency and stability of the solar cell.
[0013] In any embodiment, the oxyacid group includes one or more of sulfonic acid group, phosphonic acid group, carboxylic acid group, boric acid group, and hypophosphonic acid group, and the oxyacid salt group includes one or more of alkali metal salt, formamidinium salt, and methylammonium salt of the oxyacid group.
[0014] In any embodiment, the alkali metal salt includes one or more of lithium, sodium, potassium, and cesium salts.
[0015] In any embodiment, R5 includes one or more of the following groups: sulfonic acid group, phosphonic acid group, carboxylic acid group, boric acid group, hypophosphonic acid group, sodium phosphonate group, and cesium phosphonate group.
[0016] The oxyacid groups or oxyacid salt groups in the passivating agent are selected from the above groups, which can reduce surface defects in the first carrier transport layer, reduce non-radiative charge recombination at the interface, and improve the photoelectric conversion efficiency of the solar cell.
[0017] In any embodiment, R4 is selected from phenylene, thiophene, or C2-C4 alkylene.
[0018] The linking groups in the passivator help to regulate the hydrophobicity of the passivator compound and its interaction with the light-absorbing layer or the first carrier transport layer, thus balancing the water and oxygen stability and photoelectric conversion efficiency of the solar cell.
[0019] In any embodiment, R1, R2, and R3 are each independently selected from hydrogen or methyl.
[0020] In any embodiment, the passivating agent comprises a cation with any of the following structures:
[0021]
[0022]
[0023] In any implementation, X - Selected from halide ions or pseudohalogen ions.
[0024] In any embodiment, the halide ion includes F - Cl - ,Br - I - One or more of the following; the pseudohalogen includes CN. - SCN -BF4 - PF6 - One or more of them.
[0025] In any embodiment, the passivating agent is selected from any one of the following compounds:
[0026]
[0027] The aforementioned passivating agent can passivate surface defects in the first carrier transport layer, reduce charge recombination at the interface, and improve the photoelectric conversion efficiency and stability of solar cells.
[0028] In any embodiment, the passivation layer thickness is 0.1 nm to 10 nm.
[0029] An appropriate passivation layer thickness can effectively reduce the probability of electron carriers and hole carriers recombinizing before they are effectively separated, improve hole carrier transport efficiency, reduce degradation of light-absorbing layer materials, and improve battery stability and photoelectric conversion efficiency.
[0030] In any embodiment, the first carrier transport layer comprises a metal oxide, which includes one or more of nickel oxide, titanium dioxide, tin dioxide, nickel oxide, molybdenum oxide, tungsten oxide, and zinc oxide.
[0031] The aforementioned carrier transport layer material has a relatively high hole or electron mobility, exhibits good stability in various environments, can withstand high processing temperatures, and has excellent manufacturability.
[0032] In any embodiment, the light-absorbing layer comprises a perovskite compound, wherein the perovskite compound comprises a perovskite material satisfying at least one of ABX3 and / or A2MDX6; wherein A, B, M, and D are all inorganic, organic, or mixed organic-inorganic cations, and A is a monovalent cation including Cs. + K + 、Rb + CH3NH 3+ HC(NH2) 2+ NH2CH=NH 2+ At least one of them; B is a divalent cation, including Pb 2+ Sn 2+ Fe 2+ Mn 2+ Ni 2+ 、Ge 2+ Co 2+ and Sb 2+ At least one of them, Pb 2 + or Sn2+ M can be Ag + D can be Bi 3+ Sb 3+ In 3+ At least one of the following; X is an inorganic, organic, or mixed organic-inorganic anion, X including Cl - ,Br - I - At least one of them, C1, can be selected. - ,Br - I - .
[0033] The perovskite compound has an adjustable band gap, high carrier mobility, and high light absorption coefficient, which enables the solar cell to have good photoelectric conversion efficiency.
[0034] In any embodiment, the solar cell further includes a second carrier transport layer disposed on the side of the light-absorbing layer away from the passivation layer; the second carriers in the second carrier transport layer are different from the first carriers in the first carrier transport layer; and / or
[0035] The first electrode on the side of the first carrier transport layer away from the passivation layer; and / or
[0036] The second electrode is located on the side of the second carrier transport layer away from the light-absorbing layer.
[0037] In any embodiment, the first carrier transport layer is selected from a hole transport layer, and the second carrier transport layer is selected from an electron transport layer; or, the first carrier transport layer is selected from an electron transport layer, and the second carrier transport layer is selected from a hole transport layer. The passivating agent of Formula I provided in this application is suitable for both conventional and inverted solar cells and has a wide range of applications.
[0038] A second aspect of this application provides a method for preparing a solar cell, comprising:
[0039] Provide the first electrode;
[0040] A first carrier transport layer is prepared on one side of the first electrode;
[0041] A passivation layer is prepared on the side of the first carrier transport layer away from the first electrode;
[0042] A light-absorbing layer is prepared on the side of the passivation layer away from the first carrier transport layer;
[0043] A second carrier transport layer is prepared on the side of the light-absorbing layer away from the passivation layer;
[0044] A second electrode is fabricated on the side of the second carrier transport layer away from the light-absorbing layer;
[0045] The passivation layer includes the passivating agent shown in Formula I.
[0046]
[0047] Where A includes S or P;
[0048] R1, R2, and R3 each independently include one of hydrogen or a C1-C4 alkyl group; R3 is present when A is P; R3 is absent when A is S.
[0049] R4 includes one of C6-C10 arylene, C6-C10 heteroarylene, and C1-C6 alkylene;
[0050] R5 includes an oxyacid group or an oxyacid salt group;
[0051] X - It is a negative monovalent ion.
[0052] The solar cell fabrication method described above can reduce defects in the carrier transport layer, reduce charge recombination at the interface between the first carrier transport layer and the light-absorbing layer, and improve the photoelectric conversion efficiency and stability of the solar cell.
[0053] In any embodiment, the passivation layer is prepared by a method comprising the following steps:
[0054] The passivating agent shown in Formula I is dissolved in water or an organic solvent to obtain a passivating material. The passivating material is then coated onto one side of the first carrier transport layer to obtain a passivation layer.
[0055] The manufacturing process is mature and controllable, which is beneficial to the stability of solar cell production quality.
[0056] In any embodiment, the concentration of the passivating agent in the passivating material is 0.0001 mmol / mL to 0.1 mmol / mL, which is beneficial for the passivating material to form a passivation layer of suitable thickness.
[0057] In any embodiment, the passivation layer and the light-absorbing layer are prepared by a method comprising the following steps:
[0058] The passivating agent shown in Formula I is dissolved in a light-absorbing layer active material precursor solution to obtain an in-situ passivating material. The in-situ passivating material is then coated on one side of the first carrier transport layer to obtain a passivation layer coated on one side of the first carrier transport layer and a light-absorbing layer located on the side of the passivation layer away from the first carrier transport layer.
[0059] The method facilitates the one-step preparation of the light-absorbing layer and the passivation layer through in-situ passivation, reducing the number of process steps.
[0060] In any embodiment, the light-absorbing layer active material precursor solution includes lead halide, and in the in-situ passivation material, the molar ratio of the passivating agent represented by Formula I to the lead halide is 0.1-10%.
[0061] By adding passivating compounds to the precursor solution of the light-absorbing active material, the passivating compounds can spontaneously combine with the metal oxides in the first carrier transport layer, reducing interface defects and charge recombination, improving the stability of perovskite materials, and enhancing the photoelectric conversion efficiency and stability of solar cells.
[0062] A third aspect of this application also provides an electrical device comprising a solar cell according to the first aspect of this application and a solar cell prepared by the solar cell preparation method according to the second aspect of this application.
[0063] The fourth aspect of this application also provides a power generation device, which includes the solar cell of the first aspect of this application and the solar cell prepared by the solar cell preparation method of the second aspect of this application.
[0064] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description
[0065] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the drawings without creative effort.
[0066] Figure 1 This is a schematic diagram of the structure of a solar cell according to one embodiment of this application.
[0067] Explanation of reference numerals in the attached figures:
[0068] 1: Solar cell; 10: First electrode; 111: First carrier transport layer; 112: Passivation layer; 113: Light-absorbing layer; 114: Second carrier transport layer; 12: Second electrode. Detailed Implementation
[0069] Hereinafter, embodiments of the solar cell, power-consuming device, and power-generating device of this application will be described in detail with appropriate reference to the accompanying drawings. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided for those skilled in the art to fully understand this application and are not intended to limit the subject matter of the claims.
[0070] The "range" disclosed in this application is defined by a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints and can be arbitrarily combined; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a specific parameter, it is expected that ranges of 60-110 and 80-120 are also included. Furthermore, if minimum range values of 1 and 2 are listed, and if maximum range values of 3, 4, and 5 are listed, then the following ranges are all expected: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this application, unless otherwise stated, the numerical range "ab" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0-5" have been listed in this article; "0-5" is simply a shortened representation of these numerical combinations. Furthermore, when a parameter is stated as an integer ≥2, it is equivalent to disclosing that the parameter is, for example, an integer such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.
[0071] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.
[0072] Unless otherwise specified, all technical features and optional technical features of this application may be combined to form new technical solutions.
[0073] Unless otherwise specified, all steps in this application may be performed sequentially or randomly, optionally sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, the method may also include step (c), indicating that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.
[0074] Unless otherwise specified, the terms "comprising" and "including" as used in this application can be open-ended or closed-ended. For example, "comprising" and "including" can mean that other components not listed may also be included, or that only the listed components may be included.
[0075] Unless otherwise specified, the term "or" is inclusive in this application. For example, the phrase "A or B" means "A, B, or both A and B". More specifically, the condition "A or B" is satisfied by any of the following conditions: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).
[0076] Perovskite solar cells have attracted widespread attention due to their excellent photoelectric properties, such as tunable bandgap, high light absorption coefficient, long carrier lifetime and diffusion length, high defect tolerance, and low-cost low-temperature liquid-phase preparation method. However, the efficiency and stability of perovskite solar cells remain important issues for their commercial application.
[0077] In perovskite solar cells, metal oxides (such as nickel oxide) are often used as the carrier transport layer material. However, metal oxides have crystal defects, and high-valence metal cations (such as Ni) inevitably exist on their surface during preparation and use. 3+ These metal cations may react with A-site cations in the perovskite (such as formamidinium ions and methylammonium ions), leading to A-site vacancies and local distortions in the perovskite structure, thus affecting the structural stability of the perovskite material. Simultaneously, they can also result in excess lead halide residues at the interface between the perovskite layer and the charge carrier transport layer, causing excessive defects or uneven charge carrier transport velocity at the interface, increasing charge recombination at the interface, and reducing the photoelectric conversion efficiency of the solar cell.
[0078] Currently, alumina (Al2O3) or carbazole-based SAM self-assembled small molecules are commonly used to overcome the defects caused by high-valence metal cations. However, using alumina as an insulating inorganic material for physical isolation can cause interfacial transport problems, leading to a decrease in photoelectric conversion efficiency; carbazole-based self-assembled small molecules have poor photostability, which is detrimental to the stability of solar cells.
[0079] [Perovskite Solar Cells]
[0080] The first aspect of this application provides a perovskite solar cell 1, such as Figure 1 As shown, the device includes a first electrode 10, a first carrier transport layer 111, a passivation layer 112, a light-absorbing layer 113, a second carrier transport layer 114, and a second electrode 12, which are stacked sequentially. The passivation layer includes a passivating agent as shown in Formula I.
[0081]
[0082] Where A includes S or P;
[0083] R1, R2, and R3 each independently include or are selected from hydrogen and C1-C4 alkyl groups; R3 is present when A is P; R3 is absent when A is S;
[0084] R4 includes or is selected from one of C6-C10 arylene, C6-C10 heteroarylene, and C1-C6 alkylene;
[0085] R5 includes or is selected from oxyacid groups or oxyacid salt groups;
[0086] X - It is a negative monovalent ion.
[0087] In this article, chemical bonds This indicates whether the key exists or not. When When absent, the R3 group is not present. In this document, the term "C1-C4 alkyl" refers to a straight-chain or branched saturated hydrocarbon group containing 1 to 4 carbon atoms.
[0088] In this paper, the term "C6-C10 arylene" refers to the group remaining after removing two hydrogen atoms from an aromatic group containing 6 to 10 carbon atoms. "Alene" indicates that this group is a bridging unit connecting two other atoms or groups, rather than a complete molecule.
[0089] In this paper, the term "C6-C10 heteroaryl" refers to the group remaining after removing two hydrogen atoms from a heterocyclic aromatic group (such as nitrogen, oxygen, sulfur, etc.) containing 6 to 10 carbon atoms.
[0090] In this paper, the term "C1-C6 alkylene" refers to the group remaining after removing two hydrogen atoms from a straight-chain or branched saturated hydrocarbon group containing 1 to 6 carbon atoms. Similarly, "C2-C4 alkylene" has a similar meaning.
[0091] In this article, the term "oxyacid group" refers to an acidic group containing an oxygen atom, which can release a proton (H+) and exhibit acidity. Oxyacid groups typically contain a central atom (such as sulfur, phosphorus, carbon, boron, etc.) bonded to one or more oxygen atoms, and sometimes also contain one or more hydroxyl groups (-OH).
[0092] In this paper, the term "oxyacid salt group" refers to the anion formed by the loss of one or more protons (H+) by an oxyacid group, which then combines with a cation to form a salt.
[0093] Unbound by any theoretical constraints, the sulfonium or phosphonium ions contained in the passivating agent compound carry a positive charge and can interact with the negatively charged sites in the perovskite material of the light-absorbing layer, passivating surface defects and improving the photoelectric conversion efficiency of the solar cell. Compared to ammonium ions, sulfonium and phosphonium ions have higher stability and are less prone to deprotonation reactions that cause degradation of the perovskite material, thus contributing to improved solar cell stability. Furthermore, the oxygen atoms in the terminal oxyacid or oxyacid salt groups of the passivating agent can provide lone pairs of electrons, forming metal-oxygen bonds with the empty orbitals of high-valence metal ions in the first carrier transport layer. This forms stable coordination compounds, passivating surface defects in the first carrier transport layer and reducing A-site vacancies in the perovskite material caused by high-valence metal ions, thereby improving the structural stability of the perovskite material. Simultaneously, it also helps reduce residual lead halide at the interface between the light-absorbing layer and the first carrier transport layer, averages the carrier transport velocity, reduces charge recombination at the light-absorbing layer interface, and improves the photoelectric conversion efficiency of the solar cell.
[0094] The passivating compound includes oxyacid groups or oxyacid salt groups that can form negatively charged anions, along with positively charged thioonium or phosphonium ions. This allows the entire passivating compound to form a built-in electric field between the light-absorbing layer and the first carrier transport layer, promoting the extraction and transport of carriers (e.g., holes) and improving the photoelectric conversion efficiency of the solar cell.
[0095] The linking group R4 in the passivator helps to regulate the hydrophobicity of the passivator compound and its interaction with the light-absorbing layer or the first carrier transport layer, thereby improving the water and oxygen stability of the solar cell while maintaining photoelectric conversion efficiency.
[0096] By placing a passivation layer comprising the aforementioned passivating agent compound between the light-absorbing layer and the first carrier transport layer, the solar cell achieves both excellent photoelectric conversion efficiency and stability.
[0097] In some embodiments, the oxyacid group includes one or more of sulfonic acid group, phosphonic acid group, carboxylic acid group, boric acid group, and hypophosphonic acid group.
[0098] In this paper, the term "sulfonic acid group" refers to the -SO3H group.
[0099] In this article, the term "phosphonic acid group" refers to the -PO(OH)2 group.
[0100] In this article, the term "carboxylic acid group" refers to the -COOH group.
[0101] In this article, the term "boronic acid group" refers to the -B(OH)2 group.
[0102] In this article, the term "phosphonic acid group" refers to the -PH(OH) group.
[0103] The oxygen atoms of the oxyacid groups in the passivating agent compound form stable coordination compounds with the high-valence metal ions in the first carrier transport layer, passivating the surface defects of the first carrier transport layer. This helps to reduce A-site vacancies caused by high-valence metal ions, as well as residual lead halide at the interface between the light-absorbing layer and the first carrier transport layer, thereby improving the structural stability of the perovskite material, reducing charge recombination at the light-absorbing layer interface, and enhancing the photoelectric conversion efficiency of the solar cell.
[0104] In some embodiments, the oxyacid salt group includes one or more of the following: alkali metal salts, formamidinium salts, and methylammonium salts.
[0105] In some embodiments, the alkali metal salt includes one or more of lithium, sodium, potassium, and cesium salts.
[0106] In some embodiments, R5 is selected from sulfonic acid group, phosphonic acid group, carboxylic acid group, boric acid group, hypophosphonic acid group, sodium phosphonate group or cesium phosphonate group.
[0107] In this article, the term "sodium phosphonate" refers to the -POOH(ONa) group.
[0108] In this article, the term "cesium phosphonate" refers to the -POOH(OCs) group.
[0109] Oxytoacid groups can further increase their binding energy with high-valence metal ions in the first carrier transport layer, improve the stability of the perovskite material in the light-absorbing layer, and reduce charge recombination at the interface of the light-absorbing layer. At the same time, oxytoacid groups can increase the molecular dipole moment, forming a stronger built-in electric field between the light-absorbing layer and the first carrier transport layer, promoting the extraction and transport of carriers, and improving the photoelectric conversion efficiency of the solar cell.
[0110] In some embodiments, R4 comprises or is selected from phenylene, thiophene, or C2-C4 alkylene.
[0111] In some embodiments, R4 includes or is selected from one of ethylidene, propylidene, isopropylidene, n-butylidene, sec-butylidene, isobutylidene, and tert-butylidene.
[0112] In some embodiments, R4 includes or is selected from one of phenylene, thiophene, ethylene, propylene, and n-butylene.
[0113] The aforementioned linking groups help to increase the interaction or contact area between the passivator and the light-absorbing layer / first carrier transport layer, fully utilizing the passivator's role, reducing surface defects and charge recombination in the first carrier transport layer, and improving the stability of the perovskite material structure and the photoelectric conversion efficiency of the solar cell. Furthermore, R4 can enhance the hydrophobicity of the passivator, reducing the impact of air and moisture on the passivator and improving the stability of the solar cell.
[0114] In addition, in the passivating compound, R4 being arylene or heteroarylene can improve the conjugation effect of the passivating compound and enhance the interaction between the passivating compound and the light-absorbing layer / first carrier transport layer; R4 being C2-C4 alkylene can adjust the chain length of the flexible segment of the passivating compound, increase the interaction between the passivating compound and the light-absorbing layer / first carrier transport layer, and take into account the photoelectric transmission of the solar cell.
[0115] In some embodiments, when A is S, R1 and R2 are selected from one of hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, and isobutyl.
[0116] In some embodiments, when A is S, R1 and R2 are both selected from hydrogen. In some embodiments, when A is S, R1 and R2 are both selected from methyl groups.
[0117] In some embodiments, when A is P, R1, R2, and R3 are selected from one of hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, and isobutyl.
[0118] In some embodiments, when A is P, R1, R2, and R3 are all selected from hydrogen. In some embodiments, when A is P, R1, R2, and R3 are all selected from methyl groups.
[0119] In some embodiments, the passivating agent comprises a cation with any of the following structures:
[0120]
[0121] In some implementations, X - Selected from halide ions or pseudohalogen ions.
[0122] In some embodiments, the halide ion includes F - Cl - ,Br - One or more of I-. In some embodiments, the pseudohalogen includes CN. - SCN-, BF4 - PF6 - One or more of them.
[0123] In some embodiments, the passivating agent is selected from any one of the following compounds:
[0124]
[0125] The oxyacid groups or oxyacid salt groups in the passivating agent compound can combine with the metal oxides in the first carrier transport layer to passivate defects on the surface of the first carrier transport layer, reduce A-site vacancies in the perovskite material and charge recombination at the interface, and can also form a built-in electric field between the surface of the first carrier transport layer and the light-absorbing layer to promote the transport of carriers (e.g., holes), so that the solar cell has excellent stability and photoelectric conversion efficiency.
[0126] In some embodiments, the passivation layer 112 has a thickness of 0.1 nm to 10 nm.
[0127] In some embodiments, the passivation layer 112 has a thickness of 0.1nm-8nm, 0.1nm-6nm, 0.1nm-4nm, 0.1nm-2nm, 0.1nm-1nm, or 0.1nm-0.5nm. In some embodiments, the passivation layer thickness is 0.1nm, 0.5nm, 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, or any range of the above values, or any value within any of the above ranges.
[0128] Excessive passivation layer thickness increases the transport path length of charge carriers from the light-absorbing layer to the carrier transport layer (e.g., hole transport layer or electron layer), leading to increased series resistance and hindering carrier transport, resulting in increased charge recombination and negatively impacting the cell's photoelectric conversion efficiency. Insufficient passivation layer thickness fails to completely passivate defects in the first carrier transport layer, negatively affecting the solar cell's photoelectric conversion efficiency and the structural stability of the perovskite material. A suitable passivation layer thickness effectively passivates defects in the first carrier transport layer, significantly reducing the probability of recombination between electron and hole carriers before effective separation, improving hole carrier transport efficiency, reducing degradation of the light-absorbing layer material, and ultimately enhancing the cell's stability and photoelectric conversion efficiency.
[0129] In some embodiments, the first carrier transport layer comprises a metal oxide, which includes one or more of nickel oxide, titanium dioxide, tin dioxide, nickel oxide, molybdenum oxide, tungsten oxide, and zinc oxide.
[0130] In some embodiments, the first carrier transport layer comprises nickel oxide.
[0131] In some embodiments, the solar cell further includes a second carrier transport layer disposed on the side of the light-absorbing layer away from the passivation layer; the second carriers in the second carrier transport layer are different from the first carriers in the first carrier transport layer.
[0132] In some embodiments, the first carrier transport layer 111 is a hole transport layer, which includes at least one of nickel oxide, molybdenum oxide, and tungsten oxide.
[0133] In some embodiments, the hole transport layer 111 has a thickness of 10 nm to 100 nm.
[0134] In some embodiments, the thickness of the hole transport layer 111 can be selected as 20nm-100nm, 30nm-100nm, 40nm-100nm, 50nm-100nm, 60nm-100nm, 70nm-100nm, 80nm-100nm, or 90nm-100nm. In some embodiments, the thickness of the electron transport layer is 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, 100nm, or a range between any two of these values, or any value.
[0135] In some embodiments, the first carrier transport layer is an electron transport layer, and the electron transport layer 114 includes [6,6]-phenyl C 61 Methyl butyrate (PC) 61 BM), [6,6]-phenyl C 71 Methyl butyrate (PC) 71 BM), Fullerene C 60 (C 60 ), fullerene C 70 (C 70 At least one of the following: tin dioxide (SnO2), zinc oxide (ZnO), perylene imide (PDI) materials, naphthalene imide (NDI) materials, and their derivatives, as well as materials obtained by doping or passivation.
[0136] In some embodiments, the thickness of the electron transport layer 114 is 5 nm to 100 nm.
[0137] In some embodiments, the thickness of the electron transport layer 114 is 10nm-100nm, 20nm-100nm, 30nm-100nm, 40nm-100nm, 50nm-100nm, 60nm-100nm, 70nm-100nm, 80nm-100nm, or 90nm-100nm. In some embodiments, the thickness of the electron transport layer 113 is 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, or 100nm, or any range between any two of these values, or any value within any of these ranges.
[0138] In some embodiments, the light-absorbing layer 113 comprises a perovskite compound.
[0139] In some embodiments, the perovskite compound crystal structure satisfies at least one of ABX3 and / or A2CDX6; wherein A, B, C, and D are all inorganic, organic, or mixed organic-inorganic cations, and A is a monovalent cation, including Cs. + CH3NH 3+ (methylamine ion), NH₂CH=NH 2+ At least one of (formamidinium ion); B is a divalent cation, including Pb. 2+ Sn 2+ At least one of them, Pb 2+ or Sn 2+ C can be Ag + D can be Bi 3+ Sb 3+ In 3+ At least one of the following; X is an inorganic, organic, or mixed organic-inorganic anion, X including Br - I - At least one of them.
[0140] The perovskite compound has an adjustable band gap, high carrier mobility, and high light absorption coefficient, which enables the solar cell to have good photoelectric conversion efficiency.
[0141] In some embodiments, the thickness of the light-absorbing layer 113 is 200nm-1000nm.
[0142] In some embodiments, the thickness of the light-absorbing layer 113 can be selected as 300nm-1000nm, 400nm-1000nm, 500nm-1000nm, 600nm-1000nm, 700nm-1000nm, 800nm-1000nm, or 900nm-1000nm. In some embodiments, the thickness of the light-absorbing layer 113 is 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm, or any range between any two of the above values, or any value within any of the above ranges.
[0143] When the thickness of the perovskite light-absorbing layer is within a suitable range, the solar cell can not only absorb a wide range of solar spectra, but also has excellent charge transport performance.
[0144] In some embodiments, the perovskite compound has a band gap of 1.20 eV-2.30 eV.
[0145] In some embodiments, the band gap of the perovskite compound may be selected as 1.50 eV-2.30 eV, 1.70 eV-2.30 eV, 1.90 eV-2.30 eV, 2.0 eV-2.30 eV, or 2.20 eV-2.30 eV. In some embodiments, the band gap of the perovskite compound is 1.20 eV, 1.30 eV, 1.40 eV, 1.50 eV, 1.60 eV, 1.70 eV, 1.80 eV, 1.90 eV, 2.00 eV, 2.10 eV, 2.20 eV, 2.30 eV, or a range between any two of the above values, or any value within any of the above ranges.
[0146] With the band gap of the perovskite light-absorbing layer within the aforementioned range, the solar cell can absorb more photons across the spectral range, further improving the cell's photoelectric conversion efficiency.
[0147] In some embodiments, the solar cell includes a first electrode on the side of the first carrier transport layer away from the passivation layer.
[0148] In some embodiments, the solar cell includes a second electrode on the side of the second carrier transport layer away from the light-absorbing layer.
[0149] In some embodiments, the first electrode 10 includes a conductive substrate with high conductivity and high visible light transmittance. In some embodiments, the conductive substrate includes FTO (fluorine-doped SnO2 transparent conductive glass, SnO2:F), ITO (indium tin oxide transparent conductive glass), AZO (Al-doped ZnO transparent conductive glass), BZO (B-doped ZnO transparent conductive glass), and / or IZO (indium zinc oxide transparent conductive glass).
[0150] In some embodiments, the thickness of the first electrode 10 is 10 nm to 1000 nm.
[0151] In some embodiments, the thickness of the first electrode 10 is 50nm-1000nm, 100nm-1000nm, 150nm-1000nm, 200nm-1000nm, 400nm-1000nm, 600nm-1000nm, 800nm-1000nm, or 900nm-1000nm. In some embodiments, the thickness of the first electrode 10 is 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, or 1000nm, or a range between any two of these values, or any value within any of these ranges.
[0152] In some embodiments, the second electrode 12 includes a metal electrode, which is an organic, inorganic, or organic-inorganic conductive material, including but not limited to Ag, Cu, C, Au, Al, ITO, AZO, BZO, and IZO.
[0153] In some embodiments, the thickness of the second electrode 12 is 10nm-1000nm.
[0154] In some embodiments, the thickness of the second electrode 12 is 50nm-1000nm, 100nm-1000nm, 150nm-1000nm, 200nm-1000nm, 400nm-1000nm, 600nm-1000nm, 800nm-1000nm, or 900nm-1000nm. In some embodiments, the thickness of the metal electrode 12 is 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, or 1000nm, or any range between any two of these values, or any value within any of the aforementioned ranges.
[0155] In some embodiments, the first carrier transport layer is a hole transport layer, and the second carrier transport layer is an electron transport layer. The passivating agent of Formula I provided in this application is suitable for both conventional and inverted solar cells and has a wide range of applications.
[0156] In some embodiments, the solar cell includes a conductive substrate, a hole transport layer, a passivation layer, a light-absorbing layer, an electron transport layer, and a metal electrode stacked sequentially.
[0157] In some embodiments, a barrier layer is further present between the second carrier transport layer 114 and the second electrode 12. The barrier layer includes, but is not limited to, the following materials: 2,9-dimethyl-4,7-biphenyl-1,10-o-phenanthroline, SnO2, ZnO, and cerium oxide.
[0158] In some embodiments, a barrier layer exists between the electron transport layer and the metal electrode. In some embodiments, a barrier layer exists between the hole transport layer and the metal electrode.
[0159] In some embodiments, the thickness of the barrier layer is 0.5 nm-20 nm. In some embodiments, the thickness of the barrier layer is 1 nm-20 nm, 2 nm-20 nm, 4 nm-20 nm, 8 nm-20 nm, 12 nm-20 nm, 16 nm-20 nm, or 18 nm-20 nm. In some embodiments, the thickness of the barrier layer is 0.5 nm, 1 nm, 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, 12 nm, 14 nm, 16 nm, 18 nm, 20 nm, or any range between any two of these values, or any value within any of the aforementioned ranges.
[0160] The aforementioned barrier layer has a low valence band, which can effectively block the transport of charge carriers (such as holes or electrons), reduce energy loss caused by charge recombination, and improve the photoelectric conversion efficiency of the battery.
[0161] A second aspect of this application provides a method for manufacturing a solar cell, comprising:
[0162] Provide the first electrode;
[0163] A first carrier transport layer is prepared on one side of the first electrode;
[0164] A passivation layer is prepared on the side of the first carrier transport layer away from the first electrode;
[0165] A light-absorbing layer is prepared on the side of the passivation layer away from the first carrier transport layer;
[0166] A second carrier transport layer is prepared on the side of the light-absorbing layer away from the passivation layer;
[0167] A second electrode is fabricated on the side of the second carrier transport layer away from the light-absorbing layer;
[0168] The passivation layer includes the passivating agent shown in Formula I.
[0169]
[0170] Where A includes S or P;
[0171] R1, R2, and R3 each independently include or are selected from hydrogen and C1-C4 alkyl groups; R3 is present when A is P; R3 is absent when A is S;
[0172] R4 includes or is selected from one of C6-C10 arylene, C6-C10 heteroarylene, and C1-C6 alkylene;
[0173] R5 is selected from oxyacid groups or oxyacid salt groups;
[0174] X - It is a negative monovalent ion.
[0175] The solar cell fabrication method described above can reduce surface defects in the carrier transport layer and reduce charge recombination at the interface between the first carrier transport layer and the light-absorbing layer, which is beneficial to improving the photoelectric conversion efficiency and stability of the solar cell.
[0176] In some embodiments, the passivation layer is prepared by a method comprising the following steps:
[0177] The passivating agent of Formula I is dissolved in water or an organic solvent to obtain a passivating material. The passivating material is then coated on the side where the first charge carrier is transported to obtain a passivation layer.
[0178] The process for preparing the passivation layer of solar cells is mature and controllable, which is beneficial to the stability of solar cell production quality.
[0179] In some embodiments, the concentration of the passivating agent in the passivation layer is 0.0001 mmol / mL to 0.1 mmol / mL.
[0180] In some embodiments, the concentration of the passivating agent in the passivation layer is 0.0001 mmol / mL-0.05 mmol / mL, 0.0001 mmol / mL-0.01 mmol / mL, 0.0001 mmol / mL-0.005 mmol / mL, 0.0001 mmol / mL-0.001 mmol / mL, 0.0001 mmol / mL-0.0005 mmol / mL, 0.001 mmol / mL-0.005 mmol / mL, 0.001 mmol / mL-0.01 mmol / mL, or 0.001 mmol / mL-0.05 mmol / mL. In some embodiments, the concentration of the passivating agent in the passivation layer is 0.0001 mmol / mL, 0.0005 mmol / mL, 0.001 mmol / mL, 0.005 mmol / mL, 0.01 mmol / mL, 0.05 mmol / mL, 0.1 mmol / mL, or any range between any two of the above values, or any value within any of the above ranges.
[0181] The concentration of the passivating agent in the passivation layer is within a suitable range, which is beneficial for the passivating material to form a passivation layer of appropriate thickness.
[0182] In some embodiments, the passivation layer and the light-absorbing layer are prepared by a method including the following steps:
[0183] The passivating agent shown in Formula I is dissolved in a light-absorbing layer active material precursor solution to obtain an in-situ passivating material. The in-situ passivating material is then coated on one side of the first carrier transport layer to obtain a passivation layer coated on one side of the first carrier transport layer and a light-absorbing layer located on the side of the passivation layer away from the first carrier transport layer.
[0184] The method facilitates the one-step preparation of the light-absorbing layer and the passivation layer through in-situ passivation, reducing the number of process steps.
[0185] In some embodiments, the light-absorbing layer active material precursor solution includes lead halide.
[0186] In some embodiments, the molar ratio of the passivating agent of Formula I to the lead halide in the in-situ passivation material is 0.1%-10%.
[0187] In some embodiments, the molar ratio of the passivating agent shown in Formula I to the lead halide in the in-situ passivation material is 0.1%-8%, 0.1%-6%, 0.1%-4%, 0.1%-2%, or 0.1%-1%. In some embodiments, the molar ratio of the passivating agent shown in Formula I to the lead halide in the in-situ passivation material is 10%, 9%, 8%, 7%, 6%, 5%, 4%, 3%, 2%, 1%, 0.5%, 0.1%, or any range between any two of the stated values, or any value within any of the stated ranges.
[0188] By adding passivating compounds to the precursor solution of the light-absorbing active material, the oxyacid or oxyacid salt groups of the passivating compound spontaneously combine with the metal oxides in the first carrier transport layer, sealing these sites, reducing interface defects and charge recombination, improving the structural stability of the perovskite material, and thus increasing the photoelectric conversion efficiency of the solar cell. Furthermore, the passivating compound can reduce the impact of environmental elements such as oxygen and water vapor on the stability of the perovskite material, thereby improving the stability of the solar cell.
[0189] A third aspect of this application provides an electrical device, including a solar cell according to an embodiment of this application or a solar cell prepared by a preparation method according to an embodiment of this application.
[0190] A fourth aspect of this application provides a power generation device, including a solar cell according to an embodiment of this application or a solar cell prepared by a preparation method according to an embodiment of this application.
[0191] In some embodiments, solar cells can be used as power generation devices for electrical devices. The type of power generation device may include, but is not limited to, integrated power generation. The electrical device may include, but is not limited to, mobile devices (e.g., mobile phones, tablets, laptops, calculators, watches, etc.), electric vehicles (e.g., pure electric vehicles, hybrid electric vehicles, plug-in hybrid electric vehicles, electric bicycles, electric scooters, electric golf carts, electric trucks, etc.), automobiles, electric trains, ships and satellites, power generation systems, etc. The location of the power generation device may include, but is not limited to, the roof or back panel of a vehicle.
[0192] Example
[0193] The following embodiments describe the disclosure of this application in more detail. These embodiments are merely illustrative, as various modifications and variations will be apparent to those skilled in the art within the scope of the disclosure of this application. Unless otherwise stated, all parts, percentages, and ratios reported in the following embodiments are based on weight, and all reagents used in the embodiments are commercially available or synthesized by conventional methods and can be used directly without further processing, and the instruments used in the embodiments are commercially available.
[0194] I. Preparation of passivating agent
[0195] Preparation Example 1: At room temperature (20℃-30℃), 20 ml of anhydrous dichloromethane was added to a reaction vessel. Nitrogen gas was then introduced to purge air. 20 mmol of (3-bromopropyl)boric acid was added, and the mixture was stirred until dissolved. 1 mol of hydrogen sulfide gas (approximately 22 L) was then introduced. The tail gas generated during the reaction was collected using an aqueous sodium hydroxide solution. The mixture was refluxed and stirred for 24 h. After the reaction was complete, the solvent was removed by rotary evaporation to obtain the crude product. Recrystallization from ethanol yielded a white solid, which was then vacuum dried to obtain passivating agent 1. The yield was 90%.
[0196] Preparation Examples 2-5:
[0197] The preparation methods of Preparation Examples 2-4 are basically the same as those of Preparation Example 1. The specific differences in parameters are shown in Table 1.
[0198] The preparation method of Preparation Example 5 is basically the same as that of Preparation Example 3. The specific differences are shown in Table 1.
[0199] Preparation Example 6: At room temperature (20℃-30℃), 0.99 g (15.9 mmol) of dimethyl sulfide and 10 mL of acetonitrile were first added to the reaction vessel, followed by 0.81 g (5.3 mmol) of 4-bromopropionic acid. The mixture was stirred, and after the reaction was complete, the solid at the bottom of the reaction vessel was filtered and repeatedly washed with diethyl ether to obtain the crude product. Recrystallization with ethanol yielded a white solid, which was then dried under vacuum to obtain passivating agent 6.
[0200]
[0201] Preparation Example 7:
[0202] The preparation method of Preparation Example 7 is basically the same as that of Preparation Example 6. The specific differences in parameters are shown in Table 1.
[0203] Preparation Example 8: At room temperature (20℃-30℃), 20 ml of anhydrous dichloromethane was added to a flask. Nitrogen gas was then introduced into the reaction vessel to purge air. 50 mmol of trimethylphosphine and 20 mmol of (3-bromopropyl)phosphoric acid were added to the reaction vessel. The reaction mixture was heated to 40℃ and stirred under reflux for 24 h. After the reaction was complete, the solvent was removed by rotary evaporation to obtain the crude product. Recrystallization from ethanol yielded a white solid, which was then dried under vacuum to obtain passivating agent 8. The yield was 85%.
[0204] Preparation Examples 9-10:
[0205] The preparation methods of Preparation Examples 9-10 are basically the same as those of Preparation Example 6. The specific differences in parameters are shown in Table 1.
[0206] Preparation Example 11: At room temperature (20℃-30℃), 3 mmol (6 g) dissolved in 5 mL of ethanol was added to a reaction vessel. 10 mL of 1 mol / L NaOH aqueous solution was then added to the above solution, stirred to dissolve, and subsequently concentrated. The precipitated solid was filtered, washed repeatedly with diethyl ether, and a white solid was obtained. This solid was then dried under vacuum to obtain passivating agent 11. The yield is 30%.
[0207] Preparation Example 12:
[0208] The preparation method of Preparation Example 12 is basically the same as that of Preparation Example 11. The specific differences in parameters are shown in Table 1.
[0209] Preparation Example 13: At room temperature (20℃-30℃), 0.05 mol (8.41 g) of 4-methylthiobenzoic acid (CAS: 13205-48-6) and 0.055 mol (6.9 g) of dimethyl sulfate were stirred for 12 hours. After the reaction was complete, 100 mL of deionized water and 50 mL of diethyl ether were added for extraction to obtain an aqueous solution of 4-thiothiobenzoic acid sulfate. The solvent was removed by rotary evaporation to obtain the crude product, which was then dried under vacuum to obtain passivating agent 13.
[0210] Preparation Example 14:
[0211] The preparation method of Preparation Example 14 is basically the same as that of Preparation Example 13. The specific differences in parameters are shown in Table 1.
[0212] Table 1: Passivating agent preparation parameters
[0213]
[0214]
[0215] II. Fabrication of Solar Cells
[0216] Example 1
[0217] Fabrication of a transparent conductive electrode (conductive substrate): 2.0 × 2.0 cm in size. 2 Fluorine-doped tin oxide transparent conductive glass (FTO conductive glass) was used. 0.35 cm of FTO conductive glass was removed from both ends by laser etching to expose the glass substrate. The etched FTO conductive glass was then ultrasonically cleaned with water, acetone, and isopropanol in sequence, and dried with nitrogen gas for later use as a transparent conductive electrode.
[0218] Preparation of hole transport layer: FTO conductive glass was treated with ultraviolet ozone, and nickel oxide nanoparticles with a thickness of 10 mg / mL were spin-coated at a speed of 4000 rpm. The mixture was then annealed on a hot plate at 100 °C for 30 minutes to obtain a hole transport layer with a thickness of 20 nm.
[0219] Preparation of passivation layer: The passivating agent 1 (Formula III-1) prepared in Preparation Example 1 was dissolved in methanol to obtain a passivation material solution with a concentration of 0.01 mmol / L; the passivation material solution was spin-coated on the hole transport layer at 3000 rpm and annealed at 100 °C for 10 min to obtain a passivation layer with a thickness of 5 nm.
[0220] Preparation of the perovskite light-absorbing layer: 1.7 mmol lead iodide, 1.52 mmol formamidine iodide, and 0.08 mmol cesium iodide were weighed and dissolved in 1 mL of a mixed solution of DMF (dimethylformamide) and DMSO (dimethyl sulfoxide) in a volume ratio of 4:1. The solution was stirred for 2 h and filtered through a 0.22 μm organic filter membrane to obtain a perovskite precursor solution. The perovskite precursor solution was spin-coated onto the passivation layer at 5000 rpm for 30 s. In the last 5 s, 150 μL of anisole was added dropwise to the center of the substrate. The solution was annealed at 100 °C for 40 min and cooled to room temperature to obtain a perovskite light-absorbing layer with a thickness of 500 nm.
[0221] Preparation of electron transport layer: The electron transport layer [6,6]-phenyl-C61-butyrate methyl ester (PCBM) was spin-coated onto the perovskite light-absorbing layer at 1500 rpm, annealed at 100 °C for 10 min, and its passivation layer 2,9-dimethyl-4,7-biphenyl-1,10-o-diazaphenanthroline (BCP) was spin-coated at 5000 rpm.
[0222] Preparation of metal electrodes: The thin film with the electron transport layer is placed in an evaporation apparatus, and the evaporation vacuum is allowed to reach 5 × 10⁻⁶. -4 A solar cell was prepared by evaporating an 80 nm metal back electrode Ag at a rate of 0.1 A / s below Pa.
[0223] Example 2-14
[0224] The preparation methods of Examples 2-14 are basically the same as those of Example 1, except that the type of passivating agent is adjusted during the preparation of the passivation layer, as detailed in Table 2.
[0225] Example 15
[0226] The preparation method of Example 15 is basically the same as that of Example 1, except that...
[0227] The preparation steps for the passivation layer are excluded; and the preparation method for the perovskite light-absorbing layer is adjusted as follows: 1.7 mmol lead iodide, 1.52 mmol formamidinium iodide, 0.08 mmol cesium iodide, and 0.17 mmol passivating agent compound 7 (formula III-7) are weighed and dissolved in 1 mL of a mixed solution of DMF (dimethylformamide) and DMSO (dimethyl sulfoxide) in a volume ratio of 4:1. The solution is stirred for 2 h, filtered through a 0.22 μm organic filter membrane to obtain a perovskite precursor solution. The perovskite precursor solution is spin-coated onto the passivation layer at 5000 rpm for 30 s. In the last 5 s of the 30 s, 150 μL of anisole is added dropwise to the center of the substrate. The solution is annealed at 100 °C for 40 min and cooled to room temperature to obtain a perovskite light-absorbing layer with a thickness of 500 nm.
[0228] Examples 16-17
[0229] The preparation methods of Examples 16-17 are basically the same as those of Example 15, except that the type of passivating agent is adjusted during the preparation of the passivation layer, as detailed in Table 2.
[0230] Comparative Examples 1-3
[0231] The preparation method of Comparative Example 1 is basically the same as that of Example 1, except that no passivating agent layer is prepared.
[0232] The preparation method of Comparative Example 2 is basically the same as that of Example 1, except that the passivation layer material is changed to aluminum oxide.
[0233] The preparation method of Comparative Example 3 is basically the same as that of Example 1, except that the passivation layer material is adjusted to carbazole SAM molecule Me-4PACz (CAS: 2747959-96-0; manufacturer: TCI).
[0234] The solar cells prepared in Examples 1-17 and Comparative Examples 1-3 were tested for performance using the following methods:
[0235] 1. Photoelectric conversion efficiency and stability test
[0236] The test employed a solar simulator from Guangyan, conforming to the national standard IEC61215. A crystalline silicon solar cell was used to correct the light intensity, achieving a solar intensity of AM1.5. The test cell was connected to a digital source meter, and its photoelectric conversion efficiency was measured under illumination. The test voltage range was -0.2V to 1.2V, and the scan rate was 50mV / s. The maximum photoelectric conversion efficiency was the highest efficiency of the test cell after 1-10 days of natural aging. The photoelectric conversion efficiency on day 30 was the efficiency after 30 days of storage in a nitrogen atmosphere in the dark. Stability, i.e., the retention rate of the maximum photoelectric conversion efficiency, was represented by the ratio of the photoelectric conversion efficiency on day 30 to the maximum photoelectric conversion efficiency.
[0237] III. Test Results
[0238] Table 2: Performance test results of Examples 1-17 and Comparative Examples 1-3
[0239]
[0240] In Examples 1-17, the passivation layer of the solar cell includes the passivating agent shown in Formulas III-1 to III-14. Compared with the solar cell without a passivation layer in Comparative Example 1, the solar cells of Examples 1-17 have excellent maximum photoelectric conversion efficiency, photoelectric conversion efficiency on the 30th day, and stability.
[0241] A comparison of Examples 1-17 with Comparative Examples 2-3 shows that the solar cells of Examples 1-17 exhibit significant improvements in both maximum photoelectric conversion efficiency and photoelectric conversion efficiency on day 30. Furthermore, a comparison with Comparative Example 3 reveals that the solar cells of Examples 1-16 also demonstrate excellent stability.
[0242] In Examples 1-10, the passivating agents included oxyacid groups such as borate, sulfonic acid, carboxylic acid, and phosphonic acid groups, resulting in solar cells that achieved excellent maximum photoelectric conversion efficiency, 30-day photoelectric conversion efficiency, and stability. In Examples 11-12, the passivating agents included oxyacid salt groups such as sodium phosphonate and cesium phosphonate, significantly improving the maximum photoelectric conversion efficiency, 30-day photoelectric conversion efficiency, and stability of the solar cells. Furthermore, a comparison between Examples 11-12 and Example 10 shows that, compared to phosphonic acid groups, the presence of sodium phosphonate or cesium phosphonate in the passivating agent further enhances the maximum photoelectric conversion efficiency, 30-day photoelectric conversion efficiency, and stability of the solar cells.
[0243] In Examples 7 and 9-10, the linking group in the passivating agent is a C1-C6 alkylene group. In Examples 13-14, phenylene and thiophene groups are used as passivating agents, and the solar cells exhibit excellent photoelectric conversion efficiency and stability. Furthermore, when the linking group is propylene or n-butylene, the photoelectric conversion efficiency and stability of the solar cell can be further improved.
[0244] In Examples 15-17, the passivation layer and light-absorbing layer of the solar cell were prepared in one step. Compared with Comparative Example 1, it can be seen that the solar cells of Examples 15-17 achieve good maximum photoelectric conversion efficiency, maximum photoelectric conversion efficiency on day 30, and stability. It can be understood that Formulas III-1 to III-14 are flexible in their application and have wide applicability.
[0245] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and not to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and they should all be covered within the scope of the claims and specification of this application. In particular, as long as there is no structural conflict, the various technical features mentioned in the embodiments can be combined in any way. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.
Claims
1. A solar cell, characterized in that, The solar cell comprises a first carrier transport layer, a passivation layer, and a light-absorbing layer stacked sequentially. The first carrier transport layer is a hole transport layer and comprises a metal oxide. The passivation layer comprises a passivating agent represented by Formula I. Equation I Where A includes S or P; R1, R2, and R3 each independently include one of hydrogen or a C1-C4 alkyl group; R3 is present when A is P; R3 is absent when A is S. R4 includes one of C6-C10 arylene, C6-C10 heteroarylene, and C1-C6 alkylene; R5 includes an oxyacid group or an oxyacid salt group, wherein the oxyacid group includes one or more of sulfonic acid group, phosphonic acid group, carboxylic acid group, boric acid group, and hypophosphonic acid group, and the oxyacid salt group includes one or more of alkali metal salt, formamidine salt, and methylammonium salt of the oxyacid group; X - is a negative one valent ion.
2. The solar cell according to claim 1, characterized in that, The alkali metal salt includes one or more of lithium, sodium, potassium, and cesium salts.
3. The solar cell according to claim 1, characterized in that, The R5 is selected from sulfonic acid group, phosphonic acid group, carboxylic acid group, boric acid group, hypophosphonic acid group, sodium phosphonate group or cesium phosphonate group.
4. The solar cell according to claim 1, characterized in that, R4 is selected from phenylene, thiophene, or C2-C4 alkylene.
5. The solar cell according to claim 1, characterized in that, R1, R2, and R3 are each independently selected from hydrogen or methyl.
6. The solar cell according to any one of claims 1-5, characterized in that, The passivating agent includes a cation with any of the following structures.
7. The solar cell of claim 1, wherein X - selected from halide ions or pseudohalide ions.
8. The solar cell according to claim 7, characterized in that, The halide ions include F - Cl - ,Br - I - One or more of the following; The pseudohalogen ion includes CN. - SCN - BF4 - PF6 - One or more of them.
9. The solar cell of claim 1, wherein, The passivating agent is selected from at least one of the following compounds:
10. The solar cell according to claim 1, characterized in that, The passivation layer has a thickness of 0.1 nm to 10 nm.
11. The solar cell according to claim 1, characterized in that, The metal oxide includes one or more of nickel oxide, molybdenum oxide, and tungsten oxide.
12. The solar cell of claim 1, wherein, The light-absorbing layer comprises a perovskite compound, wherein the perovskite compound comprises a perovskite material satisfying at least one of ABX3 and / or A2MDX6; wherein A, B, M, and D are all inorganic, organic, or mixed organic-inorganic cations, and A is a monovalent cation including Cs. + K + 、Rb + CH3NH3 + HC(NH2)2 + NH2CH=NH2 + At least one of them; B is a divalent cation, including Pb 2+ Sn 2+ Fe 2+ Mn 2+ Ni 2+ 、Ge 2+ Co 2+ and Sb 2+ At least one of them; M is Ag + D is Bi 3+ Sb 3+ In 3+ At least one of the following; X is an inorganic, organic, or mixed organic-inorganic anion, X including Cl - ,Br - I - At least one of them.
13. The solar cell of claim 12, wherein, B comprises Pb 2+ or Sn 2+ .
14. The solar cell of claim 12, wherein, X includes Cl - ,Br - I - .
15. The solar cell of claim 1, wherein, The solar cell further includes a second carrier transport layer disposed on the side of the light-absorbing layer away from the passivation layer, the second carrier transport layer being an electron transport layer.
16. The solar cell of claim 15, wherein, The solar cell further includes a first electrode disposed on the side of the first carrier transport layer away from the passivation layer; and / or the solar cell further includes a second electrode disposed on the side of the second carrier transport layer away from the light-absorbing layer.
17. A method for preparing a solar cell, characterized in that, include: Provide the first electrode; A first carrier transport layer is prepared on one side of the first electrode. The first carrier transport layer is a hole transport layer and includes a metal oxide. A passivation layer is prepared on the side of the first carrier transport layer away from the first electrode; A light-absorbing layer is prepared on the side of the passivation layer away from the first carrier transport layer; A second carrier transport layer is prepared on the side of the light-absorbing layer away from the passivation layer; A second electrode is fabricated on the side of the second carrier transport layer away from the light-absorbing layer; The passivation layer includes the passivating agent shown in Formula I. Formula I Where A includes S or P; R1, R2, and R3 each independently include one of hydrogen or a C1-C4 alkyl group; R3 is present when A is P; R3 is absent when A is S. R4 includes one of C6-C10 arylene, C6-C10 heteroarylene, and C1-C6 alkylene; R5 includes an oxyacid group or an oxyacid salt group, wherein the oxyacid group includes one or more of sulfonic acid group, phosphonic acid group, carboxylic acid group, boric acid group, and hypophosphonic acid group, and the oxyacid salt group includes one or more of alkali metal salt, formamidine salt, and methylammonium salt of the oxyacid group; X - is a negatively charged ion.
18. The method of producing a solar cell according to claim 17, wherein The passivation layer is prepared by a method comprising the following steps: The passivating agent shown in Formula I is dissolved in water or an organic solvent to obtain a passivating material. The passivating material is then coated onto one side of the first carrier transport layer to obtain a passivation layer.
19. The method of producing a solar cell according to claim 18, wherein The concentration of the passivating agent in the passivating material is 0.0001 mmol / mL to 0.1 mmol / mL.
20. The method for preparing a solar cell according to claim 17, characterized in that, The passivation layer and the light-absorbing layer are prepared by a method including the following steps: The passivating agent shown in Formula I is dissolved in a light-absorbing layer active material precursor solution to obtain an in-situ passivating material. The in-situ passivating material is then coated on one side of the first carrier transport layer to obtain a passivation layer coated on one side of the first carrier transport layer and a light-absorbing layer located on the side of the passivation layer away from the first carrier transport layer.
21. The method for preparing a solar cell according to claim 20, characterized in that, The light-absorbing layer active material precursor solution includes lead halide, and in the in-situ passivation material, the molar ratio of the passivating agent shown in Formula I to the lead halide is 0.1%-10%.
22. An electrical device, comprising: The solar cell includes any one of claims 1-16 or a solar cell prepared by the preparation method of any one of claims 17-21.
23. A power generation device characterized by comprising: The solar cell includes any one of claims 1-16 or a solar cell prepared by the preparation method of any one of claims 17-21.
Citation Information
Patent Citations
Application of organic phosphonium salt molecule in perovskite solar cell and preparation method of device of organic phosphonium salt molecule
CN113416213A