提高重掺锑硅单晶氧含量的热场系统、单晶炉及拉晶方法
By optimizing the thermal field system and crystal pulling method, the problem of low oxygen content in heavily antimony-doped silicon single crystals was solved, resulting in improved oxygen content and device performance. The equipment structure was simplified, and the crystal pulling speed and oxygen solid solubility were increased.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MCL ELECTRONICS MATERIALS
- Filing Date
- 2025-09-08
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies are insufficient to effectively increase the oxygen content in heavily antimony-doped silicon single crystals, which affects device performance and resistivity uniformity. Furthermore, existing equipment is complex, and methods to increase oxygen content by adding insulation are not stable enough.
An improved thermal field system and crystal pulling method are adopted, including a combination of heaters, thermal field components, insulation layer components, crucible bottom insulation components and reflective insulation components. By optimizing the structure and process parameters, oxygen volatilization and transport are controlled to ensure high oxygen concentration distribution and stable growth interface.
The oxygen content in heavily antimony-doped silicon single crystals was increased, which improved device performance and resistivity uniformity, while also simplifying the equipment structure and increasing the crystal pulling speed and oxygen solid solubility.
Smart Images
Figure CN120797176B_ABST