Method for processing a substrate for semiconductor packaging

Abstract

A method for processing a substrate for semiconductor packaging includes performing localized hot pressing on abnormally warped areas of the substrate to improve the warping of the substrate in real time, thereby avoiding the problem of large-area damage to the circuit caused by the need for overall pressing process during final product molding.

Description

Technical Field

[0001] This invention relates to a semiconductor packaging process, and more particularly to a method for processing a substrate for semiconductor packaging that can improve product reliability. Background Technology

[0002] With the development of the electronics industry, the semiconductor packaging substrate industry is also constantly evolving, and packaging companies have higher requirements for substrates. Today, substrates need to develop in two directions simultaneously: thinner and with more layers. Both of these directions will have a greater impact on the warpage of the substrate. Therefore, in order to cooperate with packaging manufacturers in controlling substrate warpage, the shipped substrates also need to minimize warpage as much as possible.

[0003] Many factors affect the warpage of a substrate, such as materials, stacking structure, and residual copper content. However, based on customized needs, the main means to improve the warpage of a substrate lies in process control.

[0004] Currently, the main factor causing carrier board warpage in the process is residual stress, such as residual thermal stress and residual mechanical stress. Therefore, in order to improve the warpage when shipping, the industry will perform a pressing operation on the shipped carrier boards. However, this method will damage the appearance of the carrier board, resulting in problems such as damage to the copper material on the carrier board surface, damage to the surface treatment structure, and discoloration. In some cases, some stress may not be eliminated, leading to more severe warpage of the carrier board.

[0005] Therefore, overcoming the various problems caused by the existing pressing plate operation has become an urgent issue to be addressed. Summary of the Invention

[0006] The purpose of this invention is to provide a method for processing a substrate for semiconductor packaging, so as to solve at least one of the above-mentioned problems.

[0007] In view of the various deficiencies of the prior art, the present invention provides a method for processing a substrate for semiconductor packaging, comprising: performing conventional processing on at least one target object, wherein the target object defines a plurality of shipping units and a peripheral portion connecting each shipping unit; performing a measurement and analysis operation to collect the height presentation status of the target object as initial data, and performing warpage analysis and recording on the initial data to obtain advanced data including the warpage status, wherein the initial data includes the height values ​​of the target object, each shipping unit, and the peripheral portion relative to a platform surface; performing a leveling operation to perform localized hot pressing on abnormal warpage areas using a plurality of pressure heads based on the advanced data; and performing an integration operation to perform a measurement and analysis operation on the target object after the leveling operation to compare and analyze the warpage improvement of the target object and each shipping unit to obtain target data.

[0008] In one specific embodiment of the aforementioned processing method, the target object and each of the shipping units undergo a coding operation, or the method of the present invention further includes performing the coding operation first, so that the target object and each of the shipping units have markings or barcodes, such as 2D barcode specifications. This facilitates the leveling operation based on the markings or barcodes on the target object and each of the shipping units and the corresponding advanced data.

[0009] In one specific embodiment of the aforementioned processing method, the warping condition includes displaying the warping degree of the target object, each of the shipping units, and the periphery.

[0010] In a specific embodiment of the aforementioned processing method, the warpage includes the maximum warpage of the target object obtained by subtracting the lowest point from the highest point of the target object's height value, the maximum warpage of the shipping unit obtained by subtracting the lowest point from the highest point of the height value of each shipping unit, or the maximum warpage of the outer perimeter obtained by subtracting the lowest point from the highest point of the outer perimeter.

[0011] In one specific embodiment of the aforementioned processing method, the warpage condition is defined by multiple warpage levels to classify the warpage of the target object, each of the shipping units, and the periphery into corresponding warpage levels. For example, the multiple warpage levels include low warpage level, medium warpage level, and high warpage level.

[0012] In one specific embodiment of the aforementioned processing method, the leveling operation adjusts the hot pressing temperature and pressure of the press head corresponding to each shipping unit according to the corresponding warp level.

[0013] In a specific embodiment of the aforementioned processing method, the warpage improvement includes at least one group consisting of the improvement of the maximum warpage of the target object and each of the shipping units, the change of the coordinate position of the maximum warpage, the distribution area of ​​the intermediate warpage level, and the average value of the warpage, wherein the intermediate warpage level is 80% to 60% of the ultimate warpage amount.

[0014] In one specific embodiment of the aforementioned processing method, the shipping unit has a circuit.

[0015] In one specific embodiment of the aforementioned processing method, the shipping unit is defined with multiple carrier plates.

[0016] In one specific embodiment of the aforementioned processing method, the conventional processing technology includes a thermal process.

[0017] In one specific embodiment of the aforementioned processing method, the pressure head is made of a flexible material that is heat-resistant to 300°C. In another specific embodiment, the material forming the pressure head is silicone rubber that is heat-resistant to 300°C.

[0018] In one specific embodiment of the aforementioned processing method, the size and position of the pressure head correspond to the size and position of the shipping unit.

[0019] In one specific embodiment of the aforementioned processing method, the target data serves as a parameter for the local hot pressing of the leveling operation to improve the process for the next batch of target objects.

[0020] As can be seen from the above, in the semiconductor packaging substrate processing method of the present invention, the abnormal warping area is mainly addressed by a leveling operation, such as by performing local hot pressing on each shipping unit, so as to improve the warping of the shipping unit in real time. Therefore, compared with the prior art, the processing method of the present invention can avoid the problem of large-area damage to the appearance of the substrate caused by the need for an overall pressing process during the final product molding. Attached Figure Description

[0021] Figure 1 This is a schematic flowchart of the method for processing the substrate for semiconductor packaging according to the present invention.

[0022] Figure 2 This is a planar schematic diagram of the target object processed by the processing method of the present invention.

[0023] Figure 3 This is a plan view of another embodiment of the target object processed by the processing method of the present invention.

[0024] Figure 4A and Figure 4B This is a partial three-dimensional schematic diagram of the leveling process of the processing method of the present invention.

[0025] The attached figures are labeled as follows:

[0026] 1 Target

[0027] 20,40 shipping units

[0028] 21. Peripheral Areas

[0029] 30 carrier board

[0030] 41, 42, 43, 44 pressure heads

[0031] S11 First Step

[0032] S12 Second Step

[0033] S13 Third Step

[0034] S14 Fourth Step

[0035] S15 Fifth Step Detailed Implementation

[0036] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

[0037] It should be understood that the structures, proportions, sizes, etc., shown in the accompanying drawings are only for illustrative purposes to aid those skilled in the art in understanding and reading the content disclosed herein, and are not intended to limit the conditions under which the invention can be implemented. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the invention, should still fall within the scope of the disclosed technical content. Furthermore, the terms such as "above," "first," "second," and "one" used in this specification are merely for clarity of description and are not intended to limit the scope of the invention. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of the invention's implementation.

[0038] Figure 1 This is a schematic flowchart of the method for processing the substrate for semiconductor packaging according to the present invention.

[0039] like Figure 1 As shown, firstly, in the first step S11, at least one as... Figure 2 The target item 1 and each of the shipping units 20 are marked with a barcode, such as a 2D barcode. This facilitates the leveling process based on the markings or barcodes and corresponding advanced data on the target item and each shipping unit.

[0040] In this embodiment, the target object 1 is a full-size substrate for semiconductor packaging, which defines a plurality of shipping units 20 and a peripheral portion 21 connecting each of the shipping units 20.

[0041] For example, the shipping unit 20 may include multiple carrier boards 30 with wiring, such as Figure 3 As shown, the carrier board 30 can be in the form of a circuit board with a core layer, a circuit structure without a core layer, a silicon interposer (TSI) with conductive silicon vias (TSVs), a lead frame, a wafer, or other boards with metal routing, etc., without any particular limitation.

[0042] In the second step S12, the good target object 1 from the first step S11 is selected for conventional processing.

[0043] In this embodiment, the conventional processing technology includes thermal processes, such as forming a solder resist layer or other structures. For example, a solder resist layer, such as green paint, is formed on each of the carrier plates 30. It should be understood that the conventional processing technology can also be supplemented with layering processes, surface treatment processes, or other processes as needed.

[0044] In the third step S13, a measurement and analysis operation is performed. After the conventional processing in the second step S12, which involves processes affecting warpage (e.g., thermal processing), a platform is used as a reference surface to measure the three-dimensional height of the target object 1 or to image the three-dimensional height of the target object 1's surface. This collects the height characteristics of the target object 1 as initial data. The area used to collect this initial data may include the target object 1 (i.e., the entire substrate), the edge area of ​​the shipping unit 20, and the center area. In other words, the initial data includes the height values ​​of the target object, each shipping unit, and the periphery relative to the platform surface. Next, the 2D barcode is scanned using an analysis device to perform warpage analysis and record the initial data, thereby obtaining advanced data containing warpage information.

[0045] In this embodiment, the warpage condition refers to the degree of warpage of any region on the target object. For example, the warpage includes the maximum warpage of the target object obtained by subtracting the lowest point from the highest point of the target object's height value, the maximum warpage of the shipping unit obtained by subtracting the lowest point from the highest point of the height value of each shipping unit, or the maximum warpage of the outer perimeter obtained by subtracting the lowest point from the highest point of the outer perimeter. The corresponding maximum warpage is obtained as the advanced data, and the minimum height of the edge region (or outer perimeter 21) of the target object 1 can be used as plate thickness data, which is also used as advanced data.

[0046] Furthermore, the analysis equipment has a preset limit warp amount K (height) for the current process-allowed warp condition and defines multiple warp levels to classify the warp degree of the target object, each shipping unit, and the periphery into corresponding warp levels. For example, the warp level includes three types: high warp level coefficient a (i.e., high warp level), medium warp level coefficient b (i.e., medium warp level), and low warp level coefficient c (i.e., low warp level). The analysis equipment can record coordinates and visually monitor specific areas (such as areas where warping may occur) to use the area and distribution of the warped region as advanced data, which is then displayed on the screen for monitoring and subsequent warp improvement actions. The limit warp amount K represents the maximum warp amount allowed by the process. If the warp degree exceeds this value, it is considered unqualified, and the product warp level is a coefficient used to classify the warp level.

[0047] Furthermore, the analysis device analyzes the warp degree W of a known coordinate to determine and classify the warp level of the area (target object, each shipping unit, and the perimeter). Therefore, when K ≥ |W| ≥ K×a, it indicates that the area with the known coordinate is a region with a large degree of warp or a high warp level; when K×a ≥ |W| ≥ K×b, it indicates that the area with the known coordinate is a region with a moderate degree of warp or a medium warp level; when K×b ≥ |W| ≥ K×c, it indicates that the area with the known coordinate is a region with a small degree of warp or a low warp level.

[0048] For example, the analysis device defines the limit warpage K as 2mm, that is, if the warpage W exceeds 2mm, it is unqualified. The high warpage grade coefficient a, medium warpage grade coefficient b, and low warpage grade coefficient c are set to 80%, 60%, and 40%, respectively. Therefore, when the warpage W of the known coordinate is between 2mm and 1.6mm (2x80%=1.6) (i.e., 2≥|W|≥1.6), the area of ​​the known coordinate is an area with a large degree of warpage or a high warpage grade.

[0049] In the fourth step S14, a leveling operation is performed, using pressure heads 41, 42, 43, and 44 to apply localized hot pressing to areas of abnormal warping, such as... Figure 4A and Figure 4B As shown.

[0050] In this embodiment, the local improvement stage of the leveling operation is equipped with a set of modular pressure heads 41, 42, 43, and 44. The size and position of each pressure head 41, 42, 43, and 44 correspond to the size and position of each shipping unit 20, 40, ensuring a proper match. Each pressure head 41, 42, 43, and 44 can be set with different output pressures, and the pressure heads 41, 42, 43, and 44 can be made of, for example, silicone rubber and / or flexible materials resistant to heat up to 300°C. Therefore, during the local hot pressing process, the pressure heads 41, 42, 43, and 44, due to their highly elastic material properties, will not damage the wiring on the shipping unit 20, while simultaneously conducting a certain amount of heat to improve the effect and efficiency of the local leveling.

[0051] For example, during localized hot pressing, each of the pressure heads 41, 42, 43, 44 presses onto its corresponding shipping unit 20, 40, and raises the temperature of a specific pressure head 41 to a target temperature (e.g., approximately 200°C). During the heating process, the pressure head 41 can appropriately increase the temperature and pressure for shipping units 40 with abnormal warpage W (or areas on the target object 1 with excessive warpage). In other words, the leveling operation adjusts the hot pressing temperature and pressure of the pressure heads 41, 42, 43, 44 corresponding to each shipping unit 20, 40 according to the corresponding warpage level.

[0052] In the fifth step S15: an integration operation is performed so that the analysis equipment performs measurement and analysis on the target object 1 after the leveling operation to improve the warp of the target object 1 and each of the shipping units 20, 40. Specifically, the warp degree W of each shipping unit 20, 40 is compared and analyzed with the overall warp degree W of the target object 1 to obtain target data. This data is used as parameters (i.e., reference data) for improving the process of the next batch of target objects for the local hot pressing of the leveling operation, thereby effectively improving the overall warp quality of the product.

[0053] In this embodiment, data is collected and compiled into a database containing target data based on the warpage of the target object 1 and the finished products of each shipping unit 20, 40 (e.g., improvement in the maximum warpage degree, change in the coordinate position of the maximum warpage, distribution area of ​​the intermediate warpage level, and average warpage degree, etc.). This database is used to improve the parameters of local bonding of the target object or similar products (e.g., products with the same stacking structure material and similar residual copper ratio). In a specific embodiment, the intermediate warpage level is 80% to 60% of the ultimate warpage amount.

[0054] For example, when the improvement in the maximum warping area is not significant, or when the area of ​​the region where the intermediate warping level (general warping degree) is distributed does not decrease significantly, the pressure of the pressure heads 41, 42, 43, 44 can be appropriately increased and their temperature raised to improve the warping situation. Alternatively, when the positional shift of the maximum warping area is too large, or when the area of ​​the region where the intermediate warping level (general warping degree) is distributed expands, the average warping value of the target object 1 or the shipping unit 20 increases, thus generating more stress. Therefore, the pressure of the pressure heads 41, 42, 43, 44 should be reduced.

[0055] In summary, the semiconductor packaging substrate processing method of the present invention has the following advantages:

[0056] First, by using measurement and analysis operations (such as the third step S13), the process that affects the warpage W (such as the thermal process in the second step S12) is monitored to effectively control the warpage W of the shipping unit 20 and make improvements in advance (such as the fourth step S14), thereby avoiding the problem of local accumulation of warpage shaping or deformation. Therefore, it can avoid the situation where the overall warpage cannot meet the standard after the final product is formed.

[0057] Second, by leveling operations (such as step S14 in the fourth step), the target object 1 or the shipping unit 40 with abnormal warpage W is locally improved to specifically eliminate some stress, while the stress that cannot be eliminated is transferred to the outer part 21 to improve the warpage W of the shipping unit 40 to the greatest extent.

[0058] Third, warping of the shipping unit 40 is improved in real time through leveling operations (such as step S14 in the fourth step) to avoid large-area damage to the appearance of the target object 1 or the carrier plate 30 when the final product is formed and an overall pressing process is required.

[0059] Fourth, by using silicone rubber to make modular pressure heads 41, 42, 43, and 44, which have high elasticity and high temperature resistance, the pressure heads 41, 42, 43, and 44 can conduct heat during local hot pressing, which not only improves the flattening effect but also avoids damage to the wiring of the shipping unit 20.

[0060] Fifth, since the dimensions of the shipping units 20 of the current carrier board manufacturers are roughly the same, the modular pressing heads 41, 42, 43, and 44 can be reused. Furthermore, through the integration operation (such as step S15 in the fifth step), a common pressing parameter (target data) is integrated based on the warpage improvement situation to improve the quality of the target object 1 during mass production, thereby improving production efficiency.

[0061] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Those skilled in the art can make modifications to the above embodiments without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the claims.

Claims

1. A processing method of a substrate for a semiconductor package, characterized by, include: At least one target object is subjected to conventional processing, wherein the target object defines a plurality of shipping units and a peripheral portion connecting each shipping unit; Measurement and analysis work is performed to collect the height presentation status of the target object as initial data, and warp analysis is performed and recorded on the initial data to obtain advanced data including the warp status. The initial data includes the height values ​​of the target object, each shipping unit and the periphery relative to a platform surface, and the warp status is defined with multiple warp levels. Leveling operations are performed, adjusting the hot pressing temperature and pressure of multiple pressure heads according to the warping level, and using these multiple pressure heads to perform localized hot pressing on abnormally warped areas based on the advanced data; and An integration operation is carried out, and the target object after the leveling operation is measured and analyzed to compare and analyze the warpage improvement of the target object and each of the shipping units in order to obtain target data.

2. The method of claim 1, wherein The warping condition includes displaying the warping degree of the target object, each of the shipping units, and the periphery.

3. The method of claim 2, wherein the step of processing is performed by a computer. The warpage includes the maximum warpage of the target object obtained by subtracting the lowest point from the highest point of the target object's height value, the maximum warpage of the shipping unit obtained by subtracting the lowest point from the highest point of the height value of each shipping unit, or the maximum warpage of the periphery obtained by subtracting the lowest point from the highest point of the periphery.

4. The method of claim 2, wherein the step of processing is performed by a computer. The warpage of the target object, each of the shipping units, and the periphery is classified into corresponding warpage levels.

5. The method of claim 4, wherein the step of processing is performed by a computer. These warpage grades include low warpage, medium warpage, and high warpage.

6. The method of claim 3, wherein the step of processing is performed by a computer. The warpage improvement includes at least one of the following groups: improvement in the maximum warpage of the target object and each of the shipping units, change in the coordinate position of the maximum warpage, distribution area of ​​the intermediate warpage level, and average warpage value, wherein the intermediate warpage level is 80% to 60% of the ultimate warpage amount.

7. The processing method as described in claim 1, characterized in that, The shipping unit has wiring.

8. The processing method as described in claim 1, characterized in that, This shipping unit is defined to have multiple carrier plates.

9. The processing method as described in claim 1, characterized in that, This conventional processing technology includes thermal processes.

10. The method of claim 1 wherein, The pressure head is made of a flexible material that can withstand temperatures up to 300°C.

11. The method of claim 1 wherein, The material forming the pressure head is silicone rubber.

12. The processing method as described in claim 1, characterized in that, The size and position of the pressure head correspond to the size and position of the shipping unit.

13. The processing method as described in claim 1, characterized in that, This target data serves as a parameter for the local hot pressing of this leveling operation, which will be used to improve the process for the next batch of target objects.

Images