太阳能电池和光伏组件

By optimizing the uniform depth and distribution of the current collector electrode in the doped silicon layer, the efficiency and cost problems caused by uneven electrode morphology were solved, and a high-efficiency, low-cost solar cell design was achieved.

CN120813117BActive Publication Date: 2026-07-17LONGI GREEN ENERGY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
LONGI GREEN ENERGY TECH CO LTD
Filing Date
2025-06-12
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

In existing solar cells, uneven electrode morphology leads to low photoelectric conversion efficiency and high cost, making it difficult to balance cell efficiency and cost.

Method used

The collector electrode is designed to ensure good uniformity of the metal crystal depth extending in the doped silicon layer. By controlling the depth difference of the metal crystal to within 5% and optimizing the width and height distribution of the electrode, good ohmic contact and uniform resistance distribution are ensured.

Benefits of technology

It improves the photoelectric conversion efficiency of solar cells, reduces contact resistance and bulk resistance, reduces the amount of electrode paste used, lowers production costs, and improves the stability and reliability of the cells.

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Abstract

本发明提供了一种太阳能电池和光伏组件,涉及光伏技术领域。太阳能电池包括:硅基底;半导体层,半导体层包括:钝化层和掺杂硅层;集电电极,位于掺杂硅层远离硅基底的一侧;集电电极延伸进入掺杂硅层,并与掺杂硅层形成欧姆接触,所述集电电极延伸进入所述掺杂硅层的部分包括多个金属晶体;在沿集电电极的延伸方向上的任意两个截面中:与掺杂硅层靠近硅基底的一侧表面的垂直距离最大的位置处的金属晶体,与掺杂硅层靠近所述硅基底的一侧表面的垂直距离分别为A1、A2,A1≥A2,(A1‑A2) / A1≤5%。本申请减少了集电电极中金属晶体进入掺杂硅层的最小深度处对集电电极的性能的限制,降低了串阻,隐裂风险更低,且成本可以更低。
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Citation Information

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