Detection module for semiconductor process equipment and semiconductor process equipment

Abstract

The application provides a detection module for a semiconductor process equipment and the semiconductor process equipment. The semiconductor process equipment comprises an electrode assembly and a feed-in electrode for feeding a radio frequency signal to the electrode assembly. The detection module comprises: a first conductive sleeve, which is arranged around the feed-in electrode and is insulated from the feed-in electrode; a second conductive sleeve, which is arranged around the first conductive sleeve and is grounded; a Rogowski coil, which is arranged around the first conductive sleeve and is located between the first conductive sleeve and the second conductive sleeve and forms a capacitive coupling structure with the first conductive sleeve and the second conductive sleeve respectively; a voltage detection circuit, which is used for outputting a coupling voltage signal reflecting the voltage on the feed-in electrode; and a current detection circuit, which is used for converting an induced voltage signal on the Rogowski coil into a current signal and outputting the current signal. The detection module of the application can accurately detect the coupling voltage signal and the current signal reflecting the actual size of the radio frequency power, which is beneficial to precisely regulating and controlling the radio frequency power provided by the radio frequency power supply.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a detection module for semiconductor process equipment and semiconductor process equipment. Background Technology

[0002] In etching processes, the radio frequency (RF) power supplied by the RF power source to the plasma generation chamber is positively correlated with the etching rate of the object to be etched. Related techniques control the etching rate of the object by controlling the RF power supplied by the RF power source to the plasma generation chamber.

[0003] In practical applications, since the radio frequency (RF) power supplied by the RF power source cannot be measured, related technologies typically utilize current sensors to detect the current signal flowing through the plasma generation chamber in real time. The RF power of the RF power source is then manually adjusted based on the detected current signal, and changes in the RF power are inferred from the changes in the current signal. However, because the current signal cannot accurately reflect the actual magnitude of the RF power, it is not conducive to precise control of the RF power. Summary of the Invention

[0004] This application provides a detection module and semiconductor process equipment for semiconductor process equipment, in order to solve the problem that the detected current signal cannot accurately reflect the actual size of the radio frequency power, which is not conducive to the precise control of the radio frequency power and thus cannot accurately control the etching rate of the plasma.

[0005] The first aspect of this application provides a detection module for semiconductor process equipment. The semiconductor process equipment includes an electrode assembly and a feed electrode connected to the electrode assembly. The feed electrode is used to feed radio frequency signals to the electrode assembly. The detection assembly includes: a first conductive sleeve, a Rogowski coil, and a second conductive sleeve; a voltage detection circuit electrically connected to the first conductive sleeve; and a current detection circuit electrically connected to the Rogowski coil.

[0006] The first conductive sleeve is used to surround the feed electrode and is insulated from the feed electrode.

[0007] The second conductive sleeve is arranged around the first conductive sleeve and is used for grounding;

[0008] The Rogowski coil is arranged around the first conductive sleeve and is located between the first conductive sleeve and the second conductive sleeve, forming a capacitive coupling structure with the first conductive sleeve and the second conductive sleeve respectively;

[0009] The voltage detection circuit is used to output a coupled voltage signal that reflects the magnitude of the voltage on the feed electrode;

[0010] The current detection circuit is used to convert the induced voltage signal on the Rogowski coil into a current signal and output it.

[0011] In one embodiment, the current detection circuit includes a signal amplification circuit and an integration circuit. The input terminal of the signal amplification circuit is connected to the output terminal of the Rogowski coil, and the output terminal of the signal amplification circuit is connected to the input terminal of the integration circuit, so that the induced voltage signal is converted into a current signal after being processed by signal amplification and integration in sequence.

[0012] In one embodiment, the current detection circuit further includes a first filter circuit and a first signal attenuation circuit. The input terminal of the first filter circuit is connected to the output terminal of the integrator circuit, and the output terminal of the first filter circuit is connected to the input terminal of the first signal attenuation circuit, so that the current signal is output after being filtered and attenuated in sequence.

[0013] In one embodiment, the voltage detection circuit includes a second filter circuit and a second signal attenuation circuit. The input terminal of the second filter circuit is connected to the first conductive sleeve, and the output terminal of the second filter circuit is connected to the input terminal of the second signal attenuation circuit, so that the coupled voltage signal is output after being filtered and attenuated in sequence.

[0014] In one embodiment, the detection module further includes a circuit board having a first surface and a second surface disposed opposite to each other. The circuit board has a through-hole that penetrates the first surface and the second surface. A first conductive sleeve, a Rogowski coil, and a second conductive sleeve are all coaxially disposed with the through-hole and disposed on the circuit board. The through-hole is used to insert a feed electrode.

[0015] A second aspect of this application provides a semiconductor process apparatus, characterized in that it includes a plasma generator and a detection module according to any of the above embodiments; wherein,

[0016] The plasma generating device includes a radio frequency power supply and a plasma generating chamber. The plasma generating chamber has an upper electrode assembly. The radio frequency power supply is used to feed radio frequency signals into the upper electrode assembly through a feed electrode.

[0017] The detection module is used to detect coupled voltage and current signals that reflect the power of the radio frequency signal from the feed electrode.

[0018] In one embodiment, the radio frequency power supply has an output terminal, which is provided with a slot and a receiving groove that are connected vertically; the slot is used to insert a feed electrode, and the receiving groove is used to accommodate a detection module so that the detection module is fitted over the feed electrode.

[0019] In one embodiment, the semiconductor process equipment further includes:

[0020] The controller is used to determine the radio frequency power of the radio frequency signal based on the coupled voltage and current signals.

[0021] In one embodiment, the plasma generating chamber further includes a lower electrode assembly, an upper electrode assembly and a lower electrode assembly are arranged at intervals in a vertical direction, the end face of the upper electrode assembly facing the lower electrode assembly defines the generating chamber, and the cross-section of the generating chamber gradually increases in the direction from the upper electrode assembly to the lower electrode assembly.

[0022] In one embodiment, the semiconductor process equipment further includes a process chamber, a flow equalizer, and a wafer carrier; wherein the flow equalizer is disposed inside the process chamber to divide the process chamber into a first chamber and a second chamber that are connected vertically; a plasma generator is disposed at the top of the first chamber, and the wafer carrier is disposed inside the second chamber.

[0023] The advantages or beneficial effects of the above technical solution include at least the following: by arranging the first conductive sleeve of the detection module around the feed electrode, the Rogowski coil around the first conductive sleeve, and the second conductive sleeve around the Rogowski coil, and insulating the first conductive sleeve from the feed electrode, a capacitive coupling structure can be formed. Furthermore, through the capacitive coupling of the first conductive sleeve and the second conductive sleeve with the feed electrode, a voltage signal proportional to the voltage signal on the feed electrode can be output from the first conductive sleeve. Through the electromagnetic coupling of the Rogowski coil with the feed electrode, an induced voltage signal reflecting the rate of change of the current signal on the feed electrode can be output from the Rogowski coil. Moreover, by electrically connecting the voltage detection circuit of the detection module to the first conductive sleeve, the voltage signal on the first conductive sleeve can be processed by the voltage detection circuit to output a coupled voltage signal reflecting the magnitude of the voltage on the feed electrode. And by electrically connecting the current detection circuit of the detection module to the Rogowski coil, the induced voltage signal on the Rogowski coil can be converted into a current signal and output by the current detection circuit. Based on this, the coupled voltage and current signals output by the detection module of this application can accurately reflect the actual amount of RF power provided by the RF power supply to the plasma generation chamber. This is beneficial for accurately controlling the RF power provided by the RF power supply by means of the coupled voltage and current signals, thereby facilitating precise control of the plasma etching rate. Attached Figure Description

[0024] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. Furthermore, these drawings and textual descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concepts of this application to those skilled in the art through reference to specific embodiments.

[0025] Figure 1 The diagram shows a schematic of the monitoring system for a plasma generator in a semiconductor process equipment of a related technology.

[0026] Figure 2A The diagram shown is a structural schematic of a detection module according to an embodiment of this application.

[0027] Figure 2B As shown Figure 2A A schematic diagram of the arrangement of the feed electrode, the first conductive sleeve, the Rogowski coil, and the second conductive sleeve.

[0028] Figure 2C As shown Figure 2A An equivalent circuit diagram of the coupling structure formed by the feed electrode, the first conductive sleeve, and the second conductive sleeve in the detection module.

[0029] Figure 3 The diagram shows the structure of the current detection circuit in the detection module.

[0030] Figure 4 The diagram shows the structure of the voltage detection circuit in the detection module.

[0031] Figure 5 The diagram shown is a schematic of the assembly of the detection module in this application onto the plasma generator.

[0032] Figure 6 The diagram shown is a schematic diagram of a semiconductor process apparatus according to an embodiment of this application.

[0033] Figure 7 The diagram shown is a schematic representation of the radio frequency power monitoring system for a semiconductor process apparatus according to an embodiment of this application. Detailed Implementation

[0034] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of this application. Therefore, the drawings and description are considered to be exemplary in nature and not restrictive.

[0035] Figure 1 The diagram shows a schematic of the monitoring system for a plasma generator in a semiconductor process equipment of a related technology.

[0036] like Figure 1As shown, the plasma generating device 10 includes a radio frequency (RF) power supply 11 and a plasma generating chamber 12. The RF power supply 11 provides RF signals to the plasma generating chamber 12. During the implementation of this application, the inventors discovered that since the RF power of the RF signal provided by the RF power supply 11 to the plasma generating chamber 12 cannot be detected, related technologies typically install a current sensor 20 at the connection between the RF power supply 11 and the plasma generating chamber 12. The current sensor 20 detects the current signal I(t) flowing through this connection in real time, and after amplification by an amplifier circuit 30, the current signal I(t) is output to a controller 40. The controller 40 controls a display 50 to display the amplified current signal I(t). The user manually adjusts the input component based on the displayed current signal I(t) to generate a control signal. This control signal regulates the RF power of the RF power supply 11, and the change in RF power is inferred from the observed change in the current signal I(t), thereby controlling the etching rate of the plasma generated by the plasma generating chamber 12 on the object to be etched. However, since the current signal I(t) cannot accurately reflect the actual magnitude of the radio frequency power, it is not conducive to the precise control of the radio frequency power, and thus cannot accurately control the etching rate of the plasma on the object to be etched.

[0037] In view of this, this application provides a detection module and semiconductor process equipment for semiconductor process equipment, which can effectively solve the problem in related technologies that the detected current signal cannot accurately reflect the actual magnitude of the radio frequency power, thus hindering precise control of the radio frequency power and consequently preventing precise control of the plasma etching rate. The embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0038] Figure 2A The diagram shown is a structural schematic of a detection module for semiconductor process equipment according to an embodiment of this application. Figure 2B As shown Figure 2A A schematic diagram of the arrangement of the feed electrode, the first conductive sleeve, the Rogowski coil, and the second conductive sleeve.

[0039] like Figure 2A and Figure 2B As shown, the detection module 60 is used in semiconductor process equipment, wherein the semiconductor process equipment includes an electrode assembly and a feed electrode 14 connected to the electrode assembly, the feed electrode 14 being used to feed radio frequency signals to the electrode assembly. The detection module 60 includes a first conductive sleeve 61, a Rogowski coil 62, a second conductive sleeve 63, a voltage detection circuit 64 electrically connected to the first conductive sleeve 61, and a current detection circuit 65 electrically connected to the Rogowski coil 62.

[0040] The first conductive sleeve 61 is provided to surround the feed electrode 14 and is insulated from the feed electrode 14.

[0041] The second conductive sleeve 63 is arranged around the first conductive sleeve 61 and is used for grounding.

[0042] A Rogowski coil 62 is disposed around a first conductive sleeve 61 and located between the first conductive sleeve 61 and a second conductive sleeve 63. The Rogowski coil 62 forms a capacitive coupling structure with the first conductive sleeve 61 and the second conductive sleeve 63, respectively. Exemplarily, the Rogowski coil 62 may be an air-core coil, and the material of the Rogowski coil 62 may include, but is not limited to, copper. The materials of the first conductive sleeve 61 and the second conductive sleeve 63 may be metallic materials.

[0043] The voltage detection circuit 64 is used to output a coupled voltage signal that reflects the magnitude of the voltage on the feed electrode 14.

[0044] The current detection circuit 65 is used to convert the induced voltage signal on the Rogowski coil 62 into a current signal and output it, so as to use the coupled voltage signal and current signal to reflect the actual magnitude of the radio frequency power of the radio frequency signal.

[0045] Next, the working principle of the detection module 60 will be explained with reference to the attached diagram.

[0046] Please refer to the following: Figure 2A , Figure 2B and Figure 5 The semiconductor process equipment includes a radio frequency (RF) power supply 11 and a plasma generation chamber 12. The plasma generation chamber 12 has an upper electrode assembly 121. The RF power supply 11 feeds an RF signal to the upper electrode assembly 121 through a feed electrode 14, thereby providing RF power to the plasma generation chamber 12. When the RF power supply 11 provides RF power to the plasma generation chamber 12, a voltage signal and a current signal flow through the feed electrode 14. The voltage signal is an AC voltage signal, and the current signal is an AC current signal.

[0047] like Figure 2B and Figure 2C As shown, by surrounding the feed electrode 14 with a first conductive sleeve 61 and insulating it from the feed electrode 14, the first conductive sleeve 61 and the feed electrode 14 are insulated from each other, effectively functioning as a first capacitor C1. The feed electrode 14 can be considered equivalent to the first electrode C11 of the first capacitor C1, and the first conductive sleeve 61 can be considered equivalent to the second electrode C12 of the first capacitor C1. By surrounding the first conductive sleeve 63 with a second conductive sleeve 63, the second conductive sleeve 63 and the first conductive sleeve 61 are effectively functioning as a second capacitor C2. The first conductive sleeve 61 can be considered equivalent to the first electrode C21 of the second capacitor C2, and the second conductive sleeve 63 can be considered equivalent to the second electrode C22 of the second capacitor C2. This structure can form a series circuit structure where the first capacitor C1 and the second capacitor C2 are connected in series.

[0048] When a voltage signal Vin flows through the feed electrode 14, the first conductive sleeve 61 is capacitively coupled to the feed electrode 14, and the second conductive sleeve 63 is capacitively coupled to the first conductive sleeve 61. This allows the first capacitor C1 formed by the first conductive sleeve 61 and the feed electrode 14, and the second capacitor C1 formed by the second conductive sleeve 63 and the first conductive sleeve 61, to perform voltage division and attenuation on the voltage signal Vin, and output the voltage signal Vout0 through the first conductive sleeve 61. The voltage signal Vout0 on the first conductive sleeve 61 can be expressed by the following formula (1):

[0049]

[0050] Since the voltage signal Vout0 output by the first conductive sleeve 61 has a proportional relationship with the voltage signal Vin flowing through the feed electrode 14 as shown in the above formula (1), the voltage signal Vout0 output by the first conductive sleeve 61 can reflect the voltage magnitude of the voltage signal Vin on the feed electrode 14. Furthermore, by electrically connecting the voltage detection circuit 64 to the first conductive conduction 61, the voltage detection circuit 64 can process the voltage signal Vout0 on the first conductive sleeve 61 and output a coupled voltage signal Vout1 that reflects the voltage magnitude on the feed electrode 14, thereby realizing the detection of the voltage signal Vin.

[0051] By wrapping the Rogowski coil 62 around the periphery of the first conductive sleeve 61, the Rogowski coil 62 can be positioned around the periphery of the feed electrode 14. When a current signal I(t) flows through the feed electrode 14, the Rogowski coil 62 is electromagnetically coupled to the feed electrode 14, outputting an induced voltage signal E(t) that reflects the rate of change of the current signal I(t). By electrically connecting the current detection circuit 65 to the Rogowski coil 62, the induced voltage signal E(t) on the Rogowski coil 62 can be converted into a current signal I(t) and output, thus enabling the detection of the current signal I(t). In this way, the actual magnitude of the radio frequency power can be accurately reflected using the detected voltage signal Vin and the current signal I(t).

[0052] The above scheme, by arranging the first conductive sleeve 61 of the detection module 60 around the feed electrode 14, the Rogowski coil 62 around the first conductive sleeve 61, and the second conductive sleeve 63 around the Rogowski coil 62, and insulating the first conductive sleeve 61 from the feed electrode 14, can form a capacitive coupling structure. Through the capacitive coupling of the first conductive sleeve 61 and the second conductive sleeve 63 with the feed electrode 14, a voltage signal Vout0 proportional to the voltage signal Vin on the feed electrode 14 can be output from the first conductive sleeve 61. Electromagnetic coupling is then achieved between the Rogowski coil 62 and the feed electrode 14. The detection module 60 can output an induced voltage signal E(t) from the Rogowski coil 62, reflecting the rate of change of the current signal I(t) on the feed electrode 14. Furthermore, by electrically connecting the voltage detection circuit 64 of the detection module 60 to the first conductive sleeve 61, the voltage signal Vout0 on the first conductive sleeve 61 can be processed by the voltage detection circuit 64 to output a coupled voltage signal Vout1 reflecting the magnitude of the voltage on the feed electrode 14. Similarly, by electrically connecting the current detection circuit 65 of the detection module 60 to the Rogowski coil 62, the induced voltage signal E(t) on the Rogowski coil 62 can be converted into a current signal I(t) and output. Therefore, the coupled voltage signal Vout1 and the current signal I(t) output by the detection module 60 of this application can accurately reflect the actual magnitude of the radio frequency power provided by the radio frequency power supply 11 to the plasma generation chamber 12. This facilitates precise control of the radio frequency power provided by the radio frequency power supply 11 using the coupled voltage signal Vout1 and the current signal I(t), thereby enabling precise control of the plasma etching rate.

[0053] In one implementation, please refer to the following: Figure 2A and Figure 2B An insulating dielectric material is filled between the feed electrode 14 and the first conductive sleeve 61 (attached). Figure 2A and Figure 2B (Not shown in the image); and / or, an insulating dielectric material is filled between the first conductive sleeve 61 and the second conductive sleeve 63. Exemplarily, the insulating dielectric material includes, but is not limited to, RF4 (glass fiber). By filling the space between the feed electrode 14 and the first conductive sleeve 61 with an insulating dielectric material, the feed electrode 14 and the first conductive sleeve 61 can be insulated and mechanically fixed using the insulating dielectric material, and the insulating dielectric material can also serve as the dielectric for the first capacitor C1 equivalent to the feed electrode 14 and the first conductive sleeve 61. Similarly, filling the space between the first conductive sleeve 61 and the second conductive sleeve 63 with an insulating dielectric material can also provide insulation, mechanical fixing, and serve as the dielectric for the second capacitor C2.

[0054] In one implementation, please refer to the following: Figure 2A and Figure 3 The current detection circuit 65 includes a signal amplification circuit 65A and an integration circuit 65B. The input terminal of the signal amplification circuit 65A is connected to the output terminal 621 of the Rogowski coil 62, and the output terminal of the signal amplification circuit 65A is connected to the input terminal of the integration circuit 65B, so that the induced voltage signal E(t) is restored to the current signal I(t) after being processed by signal amplification and integration in sequence.

[0055] For example, please refer to the following: Figure 2A , Figure 2B and Figure 3 The Rogowski coil 62 can be coaxially arranged with the feed electrode 14. When a current signal I(t) flows through the feed electrode 14, the current signal I(t) is equivalent to passing through the center of the Rogowski coil 62 along the axis of the Rogowski coil 62, and will generate a magnetic field that changes accordingly with the current signal I(t) within the volume surrounded by the Rogowski coil 62.

[0056] According to Faraday's law of electromagnetic induction, the magnetic flux through the volume enclosed by the Rogowski coil 62 is... When a change occurs, an induced voltage signal E(t) appears in the Rogowski coil 62. The induced voltage signal E(t) and the magnetic flux passing through the region enclosed by the Rogowski coil 62 are related. rate of change over time t Proportional to the value, the induced voltage signal E(t) generated on the Rogowski coil 62 can be expressed by the following formula (2):

[0057]

[0058] In formula (2), magnetic flux It can also be expressed by the following formula (3):

[0059]

[0060] In formula (3), N represents the number of turns of the Rogowski coil 62, B ​​represents the magnetic induction intensity inside the magnetic field of the region enclosed by the Rogowski coil 62, S represents the closed surface of the region enclosed by the Rogowski coil 62, dS represents the surface element on the closed surface S, and the magnetic induction intensity B inside the magnetic field can also be expressed by the following formula (4):

[0061] B = μ × H (Formula 4)

[0062] In formula (4), H represents the magnetic field strength within the region enclosed by the Rogowski coil 62.

[0063] Furthermore, according to Ampere's circuital law, the relationship between the magnetic field strength H and the current signal I(t) can be expressed by the following formula (5):

[0064] ∮Hdl=I(t) Formula (5)

[0065] Where l represents one lap of any closed path surrounding the feed electrode 14, and the magnetic field strength H can also be expressed by the following formula (6):

[0066] H = B / μ Formula (6)

[0067] In formula (6), μ is the permeability of the magnetic medium inside the Rogowski coil 62.

[0068] Substituting equations (3) to (6) into equation (2), it can be determined that the induced voltage signal E(t) is proportional to the primary current dI(t) / dt of the current signal I(t). In other words, the induced voltage signal E(t) generated by the Rogowski coil 62 is proportional to the derivative of the current signal I(t) flowing through the feed electrode 14. Based on this, the induced voltage signal E(t) output by the Rogowski coil 62 can reflect the rate of change of the current signal I(t).

[0069] For example, please refer to the following: Figure 3 The signal amplification circuit 65A can be an inverting operational amplifier circuit, which includes a first operational amplifier Op1, a first resistor R1, and a second resistor R2. The input terminal of the first resistor R1 constitutes the input terminal of the signal amplification circuit 65A, and the inverting input terminal of the first operational amplifier Op1 (see attached diagram)... Figure 3 The terminal with the "-" sign is connected to the second terminal of the first resistor R1, and the non-inverting input terminal of the first operational amplifier Op1 is connected to the second terminal of the first resistor R1. Figure 3 The terminal with the "+" sign is grounded. The inverting input terminal of the first operational amplifier Op1 is also connected to the output terminal of the first operational amplifier Op1 through the second resistor R2. The output terminal of the first operational amplifier Op1 constitutes the output terminal of the signal amplification circuit 65A.

[0070] For example, such as Figure 3 As shown, the integrating circuit 65B includes a second operational amplifier Op2, a third resistor R3, and a third capacitor C3. The first terminal of the third resistor R3 forms the input terminal of the integrating circuit 65B, and the inverting input terminal of the second operational amplifier Op2 (see attached diagram). Figure 3 The terminal with the "-" sign is connected to the second terminal of the third resistor R3. The non-inverting input terminal of the second operational amplifier Op2 (attached) Figure 3 The terminal with the "+" sign is grounded. The inverting input terminal of the second operational amplifier Op2 is also connected to the output terminal of the second operational amplifier Op2 through the third capacitor C3. The output terminal of the second operational amplifier Op2 constitutes the output terminal of the integrator circuit 65B.

[0071] In the above scheme, since the induced voltage signal E(t) generated by the Rogowski coil 62 is proportional to the derivative of the current signal I(t) and the induced voltage signal E(t) is relatively small, by connecting the signal amplification circuit 65A and the integration circuit 65B in sequence to the output terminal 621 of the Rogowski coil 62, the induced voltage signal E(t) can be restored to the current signal I(t) after being processed by signal amplification and integration in sequence, thereby realizing the detection of the current signal I(t).

[0072] In one implementation, such as Figure 3 As shown, the current detection circuit 65 also includes a first filter circuit 65C and a first signal attenuation circuit 65D. The input terminal of the first filter circuit 65C is connected to the output terminal of the integrator circuit 65B, and the output terminal of the first filter circuit 65C is connected to the input terminal of the first signal attenuation circuit 65D, so that the restored current signal I(t) is filtered and attenuated in sequence before being output.

[0073] For example, such as Figure 3 As shown, the first filter circuit 65C can be an LC low-pass filter circuit, which includes a first inductor L1 and a fourth capacitor C4. The first end of the first inductor L1 forms the input terminal of the first filter circuit 65C, and the second end of the first inductor L1 is grounded through the fourth capacitor C4. The second end of the first inductor L1 also forms the output terminal of the first filter circuit 65C. By using the first filter circuit 65C to perform low-pass filtering on the restored current signal I(t), low-frequency noise signals in the current signal I(t) can be effectively filtered out. The cutoff frequency of the first filter circuit 65C is adapted to the radio frequency of the radio frequency power supply 11. For example, when the radio frequency of the radio frequency power supply 11 is 100kHz, the cutoff frequency of the first filter circuit 65C is 100kHz.

[0074] Exemplary, such as Figure 3 As shown, the first signal attenuation circuit 65D can be a π-type attenuation circuit, which includes a fourth resistor R4 and two fifth resistors R5. The first end of the fourth resistor R4 forms the input terminal of the first signal attenuation circuit 65D and is grounded through one of the fifth resistors R5. The second end of the fourth resistor R4 forms the output terminal of the first signal attenuation circuit 65D and is grounded through the other fifth resistor R5. By connecting the first signal attenuation circuit 65D to the output terminal of the first filter circuit 65C, the first signal attenuation circuit 65D can be used to attenuate the current signal I(t) after low-pass filtering and simultaneously perform impedance matching, thereby reducing or suppressing standing waves generated during transmission.

[0075] In one implementation, such as Figure 4As shown, the voltage detection circuit 64 includes a second filter circuit 64A and a second signal attenuation circuit 64B. The input terminal of the second filter circuit 64A is connected to the first conductive sleeve 61, and the output terminal of the second filter circuit 64A is connected to the input terminal of the second signal attenuation circuit 64B, so that the coupled voltage signal Vout0 is output after being filtered and attenuated in sequence.

[0076] For example, such as Figure 4 As shown, the second filter circuit 64A can be an LC low-pass filter circuit, which includes a second inductor L2 and a fifth capacitor C5. The first end of the second inductor L2 forms the input terminal of the second filter circuit 64A, and the second end of the second inductor L2 is grounded through the fifth capacitor C5. The second end of the second inductor L2 also forms the output terminal of the second filter circuit 64A. By using the second filter circuit 64A to perform low-pass filtering on the coupled voltage signal Vout0 output from the first conductive sleeve 61, low-frequency noise signals in the voltage signal Vout0 can be effectively filtered out.

[0077] Exemplary, such as Figure 4 As shown, the second signal attenuation circuit 64B can be a π-type attenuation circuit, which includes a sixth resistor R6 and two seventh resistors R7. The first end of the sixth resistor R6 forms the input terminal of the second signal attenuation circuit 64B and is grounded through one of the seventh resistors R7. The second end of the sixth resistor R6 forms the output terminal of the second signal attenuation circuit 64B and is grounded through the other seventh resistor R7. By connecting the second signal attenuation circuit 64B to the output terminal of the second filter circuit 64A, the second signal attenuation circuit 64B can be used to attenuate and impedance match the coupled voltage signal Vout0 after low-pass filtering, thereby reducing or suppressing standing waves generated during transmission. The output terminal of the second signal attenuation circuit 64B outputs the coupled voltage signal Vout1 after signal attenuation.

[0078] In one implementation, such as Figure 2A As shown, the detection module 60 also includes a circuit board 66, which has a first surface 661 and a second surface 662 disposed opposite to each other. The circuit board 66 has a socket 663 extending through the first surface 661 and the second surface 662. The first conductive sleeve 61, the Rogowski coil 62, and the second conductive sleeve 63 are all coaxially disposed with respect to the socket 663 and are mounted on the circuit board 66. The socket 663 is used to insert the feed electrode 14.

[0079] For example, the first conductive sleeve 61, the Rogowski coil 62, and the second conductive sleeve 63 are disposed on the same surface of the circuit board 66. For instance, the first conductive sleeve 61, the Rogowski coil 62, and the second conductive sleeve 63 may all be disposed on either the first surface 661 or the second surface 662 of the circuit board 66. Furthermore, please refer to... Figure 2A and Figure 2B The orthographic projections of the first conductive sleeve 61 and the second conductive sleeve 63 onto the circuit board 66 are circular. The orthographic projection area of ​​the Rogowski coil 62 onto the circuit board 66 is also circular.

[0080] For example, please refer to the following: Figure 2A , Figure 3 and Figure 4 Both the voltage detection circuit 64 and the current detection circuit 65 are mounted on the circuit board 66, and can be integrated into the lumped element module 66A of the circuit board 66. The circuit board 66 also has a first output pin 66B and a second output pin 66C. The first output pin 66B is connected to the output terminal of the voltage detection circuit 64 to provide the processed coupled voltage signal Vout1; the second output pin 66C is connected to the output terminal of the current detection circuit 65 to provide the current signal I(t).

[0081] Figure 6 The diagram shown is a schematic representation of a semiconductor process apparatus according to an embodiment of this application. Figure 6 As shown, the semiconductor process equipment 100 includes a plasma generator 10 and a detection module 60 according to any of the above embodiments. Please refer to [the document / reference needed]. Figure 5 The plasma generating device 10 includes a radio frequency (RF) power supply 11 and a plasma generating chamber 12. The plasma generating chamber 12 has an upper electrode assembly 121. The RF power supply 11 is used to feed an RF signal to the upper electrode assembly 121 through a feed electrode 14 to provide RF power to the plasma generating chamber 12. The detection module 60 is used to detect a coupled voltage signal Vout1 and a current signal I(t) reflecting the magnitude of the RF power from the feed electrode 14.

[0082] Compared to related technologies that indirectly reflect the magnitude of the radio frequency power provided by the radio frequency power supply 11 by detecting the current signal I(t) at the connection between the radio frequency power supply 11 and the plasma generating chamber 12, in this application, when the radio frequency power supply 11 provides radio frequency power to the plasma generating chamber 12 through the feed electrode 14, the detection module 60 detects the coupled voltage signal Vout1, which reflects the voltage magnitude on the feed electrode 14, and the current signal I(t) on the feed electrode 14. The coupled voltage signal Vout1 and the current signal I(t) can be used together to reflect the actual magnitude of the radio frequency power provided by the radio frequency power supply 11, which is beneficial for accurately guiding the regulation of radio frequency power.

[0083] In one implementation, such as Figure 5As shown, the RF power supply 11 has an output terminal, and the output terminal of the RF power supply 11 is provided with a slot 111 and a receiving groove 112 that are connected vertically. The slot 111 is used to insert the feed electrode 14. The receiving groove 112 is used to accommodate the detection module 60, so that the detection module 60 is sleeved on the outside of the feed electrode 14.

[0084] For example, when the feed electrode 14 is inserted into the slot 111, an electrical connection is achieved between the feed electrode 14 and the RF power supply 11. When the detection module 60 is accommodated in the receiving groove 112, the first conductive sleeve 61, the Rogowski coil 62, the second conductive sleeve 63, and the circuit board 66 in the detection module 60 are all accommodated in the receiving groove 112 to achieve the assembly of the detection module 60.

[0085] Based on this, without making significant modifications to the structure of the RF power supply 11 and the plasma generation chamber 12, the detection module 60 can be easily assembled between the RF power supply 11 and the plasma generation chamber 12 so that the detection module 60 can perform signal detection from the feed electrode 14.

[0086] In one implementation, such as Figure 7 As shown, the semiconductor process equipment 100 also includes a controller 40, which is used to determine the radio frequency power of the radio frequency signal based on the coupled voltage signal Vout1 and the current signal I(t).

[0087] For example, please refer to the following: Figure 5 , Figure 6 and Figure 7 The product of the voltage signal Vin and the current signal I(t) on the feed electrode 14 is equal to the radio frequency power supplied by the radio frequency power supply 11 to the plasma generation chamber 12. After the detection module 60 outputs the coupled voltage signal Vout1 and the current signal I(t) reflecting the magnitude of the voltage signal Vin, the controller 40 can calculate the voltage signal Vin on the feed electrode 14 using the formula (1) mentioned above. Then, the controller 40 can determine the radio frequency power supplied by the radio frequency power supply 11 by calculating the product of the voltage signal Vin and the current signal I(t) on the feed electrode 14, thus realizing the detection of radio frequency power.

[0088] In one embodiment, the semiconductor process equipment 100 further includes a display 50, and the controller 40 is also configured to control the display 50 to display the detected radio frequency power.

[0089] like Figure 1As shown, in related technologies, manually adjusting the RF power supplied by the RF power supply 11 to the plasma generation chamber 12 involves the controller 40 controlling the display 50 to show the current signal detected by the current sensor 20, allowing the user to intuitively observe the magnitude of the current signal I(t). The controller 40 responds to the adjustment signal input by the user's operation input component to regulate the RF power supplied by the RF power supply 11. However, since related technologies cannot directly monitor the RF power supplied by the RF power supply 11, they cannot provide precise guidance for the regulation of the RF power, which is not conducive to the precise regulation of the RF power supplied by the RF power supply 11. Furthermore, since related technologies cannot directly monitor the RF power supplied by the RF power supply 11, in order to accurately control the etching rate of the plasma on the object to be etched, it is usually necessary to conduct a large number of process experiments in advance to verify and summarize the correspondence between the detected current signal and the etching rate, and use this correspondence to control the etching rate, which will cause great inconvenience.

[0090] Compared to related technologies, the above solution uses a detection module 60 to detect the coupled voltage signal Vout1, which reflects the magnitude of the voltage signal Vin on the feed electrode 14, and the current signal I(t) on the feed electrode 14. This allows the controller 40 to accurately calculate the radio frequency (RF) power supplied by the RF power supply 11 to the plasma generation chamber 12 based on the coupled voltage signal Vout1 and the current signal I(t), and then control the display 50 to show this RF power. Based on this, direct monitoring of the RF power supplied by the RF power supply 11 can be achieved, providing precise guidance for RF power regulation. This facilitates accurate input of regulation signals and precise control of the RF power supplied by the RF power supply 11. Furthermore, since there is a positive correlation between RF power and etching rate, this positive correlation makes it easier to precisely control the etching rate of the plasma on the object to be etched.

[0091] In one implementation, please refer to the following: Figure 5 The plasma generating chamber 12 also includes a lower electrode assembly 122. The upper electrode assembly 121 and the lower electrode assembly 122 are vertically spaced apart. The second end face 121B of the upper electrode assembly 121 facing the lower electrode assembly 122 defines the generating chamber 1212. The cross-section of the generating chamber 1212 gradually increases along the direction from the upper electrode assembly 121 to the lower electrode assembly 122. This structure increases the surface area of ​​the inner wall of the generating chamber 1212, facilitating sufficient contact between the process gas and the inner wall of the generating chamber 1212, thereby aiding in the smooth ignition of the plasma generating chamber 12. Furthermore, to prevent plasma damage to the inner wall of the generating chamber 1212, a layer of nickel can be electroplated onto the inner wall of the generating chamber 1212 to protect it.

[0092] In one example, such as Figure 5As shown, the upper electrode assembly 121 is further provided with an inlet pipe 1213 communicating with the generating chamber 1212, the inlet pipe 1213 being used to input process gas. Exemplarily, the upper electrode assembly 121 has a first end face 121A facing the RF power supply 11, a second end face 121B facing away from the first end face 121A, and two side surfaces 121C located between the first end face 121A and the second end face 121B; the second end face 121B is recessed towards the first end face 121A to define the generating chamber 1212, and one side surface 121C is recessed towards the interior of the upper electrode assembly 121 to form the inlet pipe 1213, and one end of the inlet pipe 1213 extending into the interior of the upper electrode assembly 121 is connected to the generating chamber 1212 to input process gas into the interior of the generating chamber 1212.

[0093] The lower electrode assembly 122 is provided with a flow equalization orifice G. The lower electrode assembly 122 is used for capacitive coupling with the upper electrode assembly 121 to excite the process gas input into the generator chamber 1212 via the inlet pipe 1213 to ionize into plasma, and then output the plasma after being uniformly processed by the flow equalization orifice G. For example, please refer to the following: Figure 5 The lower electrode assembly 122 includes a first flow equalizer 1221, a second flow equalizer 1222, and a third flow equalizer 1223 arranged vertically at intervals. Each of the first, second, and third flow equalizers 1221 and 1222 has a flow equalizer hole G penetrating its center. The number and area of ​​the flow equalizer holes G in the first, second, and third flow equalizers 1221 and 1223 gradually increase vertically. The upper electrode assembly 122 is connected to the first flow equalizer 1221 via an insulating ceramic ring 13. When the lower electrode assembly 122 is capacitively coupled to the upper electrode assembly 121, the plasma generated in the plasma generation chamber 1212 is sequentially equalized by the first, second, and third flow equalizers 1221 and then output. Based on this, the plasma generation chamber 12 can generate uniformly distributed plasma.

[0094] In one implementation, such as Figure 6 As shown, the semiconductor process equipment also includes a process chamber 70, a flow equalizer 80, and a wafer carrier 90. The flow equalizer 80 is disposed inside the process chamber 70 to divide the process chamber 70 into a first chamber 71 and a second chamber 72 that are connected vertically. A plasma generator 10 is disposed at the top of the first chamber 71, and the wafer carrier 90 is disposed within the second chamber 72.

[0095] For example, the flow equalization plate 80 is horizontally disposed inside the process chamber 70, dividing the process chamber 70 into a first chamber 71 and a second chamber 72 arranged vertically; the flow equalization plate 80 is provided with a plurality of uniformly distributed through holes 81, which connect the first chamber 71 and the second chamber 72, so that the plasma generated by the plasma generator 10 is uniformly sprayed onto the wafer carrier device 90 after being uniformly processed by the flow equalization plate 80.

[0096] Exemplarily, the wafer carrier device 90 includes a base 91 and a plurality of ejector pins 92, all of which pass through the base 91 and are lifted by a lifting mechanism (see attached diagram). Figure 6 (Not shown in the image) Drives the wafer 200 to rise or fall, lifting it upwards to move it away from the base 91 or lowering it to place it on the base 91.

[0097] In one embodiment, process chamber 70 is a pre-cleaning process chamber.

[0098] For example, such as Figure 6 As shown, the pre-cleaning process chamber 70 is used to perform the SiCoNi pre-cleaning process. For example, in 65nm and below process technologies, the gate material of semiconductor devices uses silicon-nickel composites. Before the deposition of the silicon-nickel composite material, a SiCoNi pre-cleaning process is typically required to remove the oxide layer on the surface of wafer 200, where the oxide layer is primarily made of silicon dioxide (SiO2). The SiCoNi pre-cleaning process includes a plasma etching step and an in-situ annealing step, both of which can be performed in the same process chamber 70. Please refer to [further details needed]. Figure 5 and Figure 6 In the plasma etching step, the RF power supply 11 provides RF power to the plasma generation chamber 12. The plasma generation chamber 12 converts nitrogen trifluoride (NF3) and ammonia (NH3) input through the gas inlet pipe 1213 into ammonium fluoride (NH4F) and ammonium difluoride (NH4F·HF). Ammonium fluoride or ammonium difluoride reacts with the oxide layer on the surface of wafer 200 to generate hexafluorosilane ((NH4)2SiF6) and other byproducts. In the in-situ annealing step, the byproducts generated by the reaction of plasma with the oxide layer on the surface of wafer 200 are sublimated by annealing and discharged from the pre-cleaning process chamber 70. In this step, the temperature inside the pre-cleaning process chamber 70 is greater than or equal to 70°C.

[0099] For example, since nitrogen trifluoride and ammonia have low dissociation energies, the radio frequency power provided by the radio frequency power supply 11 is usually less than 100W and the radio frequency provided by the radio frequency power supply 11 is less than 100KHz.

[0100] In one embodiment, the plasma generating device 10 is a remote plasma source (RPS). That is, the plasma generating device 10 is a plasma generating device that separates the plasma generating chamber 12 from the process chamber 70.

[0101] Furthermore, in this application, unless otherwise expressly specified and limited, the terms "connected," "linked," "stacked," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two elements or the interaction between two elements. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0102] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of those different embodiments or examples.

[0103] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "a plurality of" means two or more, unless otherwise explicitly specified.

[0104] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various variations or substitutions within the technical scope disclosed in this application, and these should all be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A detection module for semiconductor process equipment, characterized in that, The semiconductor process equipment includes an electrode assembly and a feed electrode communicating with the electrode assembly, the feed electrode being used to feed radio frequency signals to the electrode assembly; the detection assembly includes: a first conductive sleeve, a Rogowski coil, and a second conductive sleeve, a voltage detection circuit electrically connected to the first conductive sleeve, and a current detection circuit electrically connected to the Rogowski coil; wherein... The first conductive sleeve is configured to surround the feed electrode and is insulated from the feed electrode; The second conductive sleeve is arranged around the first conductive sleeve and is used for grounding; The Rogowski coil is arranged around the first conductive sleeve and is located between the first conductive sleeve and the second conductive sleeve, forming a capacitive coupling structure with the first conductive sleeve and the second conductive sleeve respectively; The voltage detection circuit is used to output a coupled voltage signal that reflects the magnitude of the voltage on the feed electrode; The current detection circuit is used to convert the induced voltage signal on the Rogowski coil into a current signal and output it.

2. The detection module according to claim 1, characterized in that, The current detection circuit includes a signal amplification circuit and an integration circuit. The input terminal of the signal amplification circuit is connected to the output terminal of the Rogowski coil, and the output terminal of the signal amplification circuit is connected to the input terminal of the integration circuit, so that the induced voltage signal is converted into the current signal after being processed by signal amplification and integration in sequence.

3. The detection module according to claim 2, characterized in that, The current detection circuit further includes a first filtering circuit and a first signal attenuation circuit. The input terminal of the first filtering circuit is connected to the output terminal of the integrator circuit, and the output terminal of the first filtering circuit is connected to the input terminal of the first signal attenuation circuit, so that the current signal is output after being filtered and attenuated in sequence.

4. The detection module according to claim 1, characterized in that, The voltage detection circuit includes a second filter circuit and a second signal attenuation circuit. The input terminal of the second filter circuit is connected to the first conductive sleeve, and the output terminal of the second filter circuit is connected to the input terminal of the second signal attenuation circuit, so that the coupled voltage signal is output after being filtered and attenuated in sequence.

5. The detection module according to claim 1, characterized in that, The detection module further includes a circuit board with a first surface and a second surface arranged opposite to each other. The circuit board has a through hole that penetrates the first surface and the second surface. The first conductive sleeve, the Rogowski coil, and the second conductive sleeve are all coaxially arranged with the through hole and disposed on the circuit board. The through hole is used to insert the feed electrode.

6. A semiconductor process apparatus, characterized in that, Includes a plasma generating device and a detection module according to any one of claims 1 to 5; wherein, The plasma generating device includes a radio frequency power supply and a plasma generating chamber. The plasma generating chamber has an upper electrode assembly. The radio frequency power supply is used to feed a radio frequency signal to the upper electrode assembly through a feed electrode. The detection module is used to detect coupled voltage and current signals that reflect the magnitude of the radio frequency power of the radio frequency signal from the feed electrode.

7. The semiconductor process equipment according to claim 6, characterized in that, The radio frequency power supply has an output terminal, which is provided with a slot and a receiving groove that are connected vertically; the slot is used to insert the feed electrode, and the receiving groove is used to accommodate the detection module, so that the detection module is sleeved on the outside of the feed electrode.

8. The semiconductor process equipment according to claim 6, characterized in that, The semiconductor process equipment also includes: A controller is configured to determine the radio frequency power of the radio frequency signal based on the coupled voltage signal and the current signal.

9. The semiconductor process equipment according to claim 6, characterized in that, The plasma generating chamber also has a lower electrode assembly. The upper electrode assembly and the lower electrode assembly are arranged at intervals in the vertical direction. The end face of the upper electrode assembly facing the lower electrode assembly defines the generating chamber. The cross-section of the generating chamber gradually increases in the direction from the upper electrode assembly to the lower electrode assembly.

10. The semiconductor process equipment according to claim 9, characterized in that, The semiconductor process equipment also includes a process chamber, a flow uniform plate, and a wafer carrier; wherein... The flow equalization plate is disposed inside the process chamber to divide the process chamber into a first chamber and a second chamber that are connected vertically. The plasma generator is located at the top of the first chamber, and the wafer carrier is located inside the second chamber.

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