Crystalline silicon cell metallization region characterization method and system based on near-field optics

Abstract

The invention relates to the field of solar cells, in particular to a crystalline silicon cell metallization area characterization method and system based on near-field optics, and the method comprises the steps: generating a laser light source with adjustable wavelength, and separating the laser light source into pump light and reference light; focusing the pump light to a needle tip, enabling the needle tip to be close to the surface of the metallized region of the sample, and exciting an evanescent wave in a near-field region between the surface of the needle tip and the surface of the metallized region; performing phase modulation on the reference light at the vibration frequency of M to obtain modulated reference light, enabling the evanescent wave to interfere with the modulated reference light, and extracting a near-field optical signal containing scattering intensity and phase; and generating a near-field optical image based on the near-field optical signal, and carrying out inversion to obtain a dielectric constant and carrier concentration distribution of the metallized region. According to the method, the problems of insufficient resolution and poor compatibility in the prior art can be solved, and a quantitative basis is provided for process optimization.

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