Semiconductor circuit structure and manufacturing method thereof

Abstract

A semiconductor circuit structure includes a semiconductor substrate having an original semiconductor surface, an active region within the semiconductor substrate, and a transistor formed in the active region. The transistor includes a gate structure, a first spacer adjacent a first sidewall of the gate structure, and a second spacer adjacent a second sidewall of the gate structure. Wherein the thermal conductivity of the first gap wall or the second gap wall is higher than that of silicon nitride (Si3N4).

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