Light emitting diode and manufacturing method thereof
By fabricating a transparent film layer on a temporary substrate of a light-emitting diode and patterning it to form a focusing layer, the warping problem caused by stress mismatch is solved, the laser lift-off process is simplified, and the reliability and yield of the light-emitting diode are improved.
Patent Information
- Application Number
- CN202510639618.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-19
- Publication Date
- 2025-10-28
AI Technical Summary
During the fabrication of light-emitting diodes (LEDs), warping caused by the mismatch in thermal expansion coefficients and stress between the temporary substrate and the substrate can lead to laser defocusing during laser stripping, affecting the reliability of the LEDs.
A transparent film layer is fabricated on a temporary substrate and patterned. The portion of the transparent film layer located at the edge of the epitaxial structure is retained to form a focusing layer. The focal length at the edge of the temporary substrate is changed to enable laser focusing, simplifying the stripping process of the temporary substrate.
This improved the yield of LEDs, reduced damage to the epitaxial structure, improved the laser stripping effect, and enhanced the reliability of LEDs.
Smart Images
Figure CN120857744A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of light-emitting devices, and in particular to a light-emitting diode and a method for manufacturing the same. Background Technology
[0002] Light-emitting diodes (LEDs) have wide applications in displays, decorations, and other fields. By employing different semiconductor materials and structures, LEDs can cover the full color range from ultraviolet to infrared.
[0003] In related technologies, the fabrication methods of light-emitting diodes typically include: fabricating an epitaxial structure on a temporary substrate; transferring the epitaxial structure using bonding technology; and removing the temporary substrate using laser.
[0004] Stress during bonding can cause warping at the edges of the temporary substrate, leading to defocusing of the laser at the edges of the temporary substrate during laser stripping. This makes it difficult to strip the temporary substrate and reduces the reliability of the light-emitting diode. Summary of the Invention
[0005] This disclosure provides a light-emitting diode and its fabrication method, reducing the risk of laser defocusing during temporary substrate removal and improving the reliability of the light-emitting diode. The technical solution is as follows:
[0006] On one hand, a method for manufacturing a light-emitting diode is provided, the method comprising:
[0007] Epitaxial structures are grown on temporary substrates;
[0008] The epitaxial structure is bonded to the substrate;
[0009] A transparent film layer is formed on the side of the temporary substrate away from the epitaxial structure;
[0010] The transparent film layer is patterned, the middle part of the transparent film layer is removed, and the part of the transparent film layer located at the edge of the epitaxial structure is retained to obtain the focusing layer;
[0011] The temporary substrate is peeled off by irradiating one side of the temporary substrate with the focusing layer using a laser.
[0012] Optionally, the focusing layer is annular.
[0013] Optionally, the ratio of the inner diameter of the focusing layer to the outer diameter of the focusing layer is 1:1.5 to 1:2.
[0014] Optionally, the refractive index of the focusing layer is less than the refractive index of the temporary substrate.
[0015] Optionally, the thickness of the focusing layer is 200–2000 nm.
[0016] Optionally, the focusing layer is an insulating transparent material layer.
[0017] Optionally, the insulating transparent material layer is a SiO2 layer, a SiN layer, or a Ti2O3 layer;
[0018] Alternatively, the insulating transparent material layer is a stack of at least two of SiO2, SiN and Ti2O3.
[0019] Optionally, growing the epitaxial structure on the temporary substrate includes:
[0020] A second semiconductor layer, an active layer, and a first semiconductor layer are grown sequentially on a temporary substrate.
[0021] Optionally, bonding the epitaxial structure to the substrate includes:
[0022] A first bonding layer is fabricated on the epitaxial structure;
[0023] A second bonding layer is fabricated on the substrate;
[0024] The epitaxial structure is bonded to the substrate through the first bonding layer and the second bonding layer.
[0025] On the other hand, a light-emitting diode is provided, which is manufactured by the above method.
[0026] The beneficial effects of the technical solutions provided in this disclosure are:
[0027] When the epitaxial structure is bonded to the substrate, stress mismatch can cause warping at the edges of the temporary substrate. To address this issue, in this embodiment, a transparent film layer is fabricated on the temporary substrate. This transparent film layer is then patterned, and the central portion is removed, leaving only the portion located at the edge of the epitaxial structure, thus obtaining a focusing layer. The focusing layer can alter the focal length at the edge of the temporary substrate, enabling laser focusing. This also makes the temporary substrate easier to detach and peel off, improving the yield of the light-emitting diode. Attached Figure Description
[0028] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0029] Figure 1 This is a schematic diagram of a light-emitting diode warped according to an embodiment of the present disclosure;
[0030] Figure 2This is a flowchart of a method for manufacturing a light-emitting diode provided in an embodiment of the present disclosure;
[0031] Figure 3 This is a flowchart of another method for manufacturing a light-emitting diode provided in this disclosure embodiment;
[0032] Figure 4 This is a structural diagram of a light-emitting diode manufacturing process provided in an embodiment of this disclosure;
[0033] Figure 5 This is a structural diagram of a light-emitting diode manufacturing process provided in an embodiment of this disclosure;
[0034] Figure 6 This is a structural diagram of a light-emitting diode manufacturing process provided in an embodiment of this disclosure;
[0035] Figure 7 This is a structural diagram of a light-emitting diode manufacturing process provided in an embodiment of this disclosure;
[0036] Figure 8 This is a schematic diagram of the laser irradiation path provided in an embodiment of this disclosure;
[0037] Figure 9 This is a schematic diagram of the structure of a light-emitting diode provided in an embodiment of this disclosure.
[0038] The attached figures are labeled as follows:
[0039] 100: Temporary substrate;
[0040] 101: Focusing layer;
[0041] 1010: Transparent film layer;
[0042] 20: Extensional structure;
[0043] 201: First semiconductor layer;
[0044] 202: Active layer;
[0045] 203: Second semiconductor layer;
[0046] 204: First bonding layer;
[0047] 205: Second bonding layer;
[0048] 30: Substrate. Detailed Implementation
[0049] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.
[0050] Laser lift-off (LLO) is used in the fabrication of light-emitting diodes (LEDs). LLO uses pulsed laser irradiation to ablate the material, allowing a temporary substrate to be removed from the epitaxial structure. Compared to other high-energy beam lift-off methods such as chemical lift-off, mechanical lift-off, and ion beam lift-off, laser lift-off technology offers advantages such as higher energy input and less device damage.
[0051] In addition to the thermal mismatch during the bonding process mentioned earlier, the temporary substrate (sapphire) and the substrate (silicon wafer) have different coefficients of thermal expansion (sapphire's coefficient of thermal expansion is 5.8 × 10⁻⁶). -6 The coefficient of thermal expansion of K and Si is 2.5 × 10⁻⁶. -6 / In addition to K), the stress generated by the epitaxial structure can also cause warping. When these two factors are combined, the warping situation is as follows: Figure 1 As shown, during laser ablation, the laser defocuses as it passes through the warped surface of the temporary substrate, resulting in poor ablation performance.
[0052] Figure 2 This is a flowchart illustrating a method for manufacturing a light-emitting diode (LED) according to an embodiment of this disclosure. See also... Figure 2 The method includes the following steps:
[0053] S11. An epitaxial structure 20 is grown on a temporary substrate 100.
[0054] In this embodiment of the disclosure, the temporary substrate 100 can be any one of a sapphire substrate, a Si substrate, or the like.
[0055] For example, the temporary substrate 100 is a sapphire substrate.
[0056] In this embodiment of the disclosure, the epitaxial structure 20 may include a stack of a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203.
[0057] In this embodiment of the disclosure, the first semiconductor layer 201 may be a P-type semiconductor layer.
[0058] In another example, the first semiconductor layer 201 can be an N-type semiconductor layer.
[0059] In this embodiment of the disclosure, the active layer 202 is a multi-quantum well layer, comprising multiple periodically alternating quantum well layers and quantum barrier layers.
[0060] In this embodiment of the disclosure, the second semiconductor layer 203 may be an N-type semiconductor layer.
[0061] In another example, the second semiconductor layer 203 can be a P-type semiconductor layer.
[0062] S12, The epitaxial structure 20 is bonded to the substrate 30.
[0063] In this embodiment of the disclosure, the substrate 30 can be any one of a sapphire substrate, a Si substrate, or the like.
[0064] For example, substrate 30 is a Si substrate.
[0065] S13. A transparent film layer 1010 is formed on the side of the temporary substrate 100 away from the epitaxial structure 20.
[0066] S14. The transparent film layer 1010 is patterned, the middle part of the transparent film layer 1010 is removed, and the part of the transparent film layer 1010 located at the edge of the epitaxial structure 20 is retained to obtain the focusing layer 101.
[0067] In this embodiment of the disclosure, the focusing layer 101 is annular.
[0068] In this implementation, the warping of the middle position of the light-emitting diode is not severe, and the ring-shaped focusing layer can change the laser focal length at the edge of the light-emitting diode, which is beneficial for the temporary substrate removal.
[0069] For example, the focusing layer 101 is a ring.
[0070] In other embodiments, the focusing layer 101 may also be of other shapes, such as multiple strip structures arranged along the edges.
[0071] In this embodiment of the present disclosure, the ratio of the inner diameter of the focusing layer 101 to the outer diameter of the focusing layer 101 can be from 1:1.5 to 1:2.
[0072] In this implementation, the inner diameter of the focusing layer and the outer diameter of the focusing layer adopt the above ratio, so that the area covered by the focusing layer is close to the warp range of the temporary substrate. This can change the laser focal length of the warp range of the temporary substrate, so that the laser can be focused, which is conducive to the removal of the temporary substrate.
[0073] For example, the ratio of the inner diameter of the focusing layer 101 to the outer diameter of the focusing layer 101 is 1:1.5.
[0074] In this embodiment of the disclosure, the refractive index of the focusing layer 101 is less than the refractive index of the temporary substrate 100.
[0075] In this implementation, the refractive index of the focusing layer is lower than that of the temporary substrate, which allows the laser to be focused and improves the substrate stripping effect.
[0076] In other embodiments, the refractive index of the focusing layer 101 may also be equal to or greater than the refractive index of the temporary substrate 100.
[0077] In this embodiment of the disclosure, the thickness of the focusing layer 101 can be 200 to 2000 nm.
[0078] In this implementation, the aforementioned thickness of the focusing layer allows for laser focusing without being too thick, thus reducing manufacturing costs.
[0079] For example, the thickness of the focusing layer 101 is 1500 μm.
[0080] In this embodiment of the disclosure, the focusing layer 101 is an insulating transparent material layer.
[0081] In this implementation, the focusing layer is an insulating and transparent material layer, which allows the laser to pass through the focusing layer during the subsequent laser stripping process, thereby achieving substrate stripping.
[0082] In this embodiment of the disclosure, the insulating transparent material layer is a SiO2 layer, a SiN layer, or a Ti2O3 layer;
[0083] Alternatively, the insulating transparent material layer is a stack of at least two of SiO2, SiN and Ti2O3.
[0084] For example, the insulating transparent material layer is a stack of SiO2 and SiN.
[0085] In this implementation, the focusing layer made of the aforementioned material has a low refractive index and is transparent, which allows the laser to pass through while changing the laser focal length, thereby focusing the laser and improving the substrate peeling effect.
[0086] S15. Irradiate the side of the temporary substrate 100 with the focusing layer 101 using a laser, and peel off the temporary substrate 100.
[0087] When the epitaxial structure is bonded to the substrate, stress mismatch can cause warping at the edges of the temporary substrate. To address this issue, in this embodiment, a transparent film layer is fabricated on the temporary substrate. This transparent film layer is then patterned, and the central portion is removed, leaving only the portion located at the edge of the epitaxial structure, thus obtaining a focusing layer. The focusing layer can alter the focal length at the edge of the temporary substrate, enabling laser focusing. This also makes the temporary substrate easier to detach and peel off, improving the yield of the light-emitting diode.
[0088] Figure 3 This is a flowchart of another method for manufacturing a light-emitting diode (LED) according to an embodiment of this disclosure. See also... Figure 3 The method includes the following steps:
[0089] S21. A second semiconductor layer 203, an active layer 202, and a first semiconductor layer 201 are sequentially fabricated on a temporary substrate 100 to form an epitaxial structure 20.
[0090] In this embodiment of the disclosure, the temporary substrate 100 can be any one of a sapphire substrate, a Si substrate, or the like.
[0091] For example, the temporary substrate 100 is a sapphire substrate.
[0092] In one example, step S21 includes:
[0093] The first step is to fabricate the second semiconductor layer 203.
[0094] In this embodiment of the disclosure, the second semiconductor layer 203 may be an N-type semiconductor layer.
[0095] In another example, the second semiconductor layer 203 can be a P-type semiconductor layer.
[0096] The second step is to create the active layer 202.
[0097] In this embodiment of the disclosure, the active layer 202 is a multi-quantum well layer, comprising multiple periodically alternating quantum well layers and quantum barrier layers.
[0098] For example, a metal-organic chemical vapor deposition (MOCVD) apparatus is used to alternately grow multiple quantum well layers and quantum barrier layers on the surface of the second semiconductor layer.
[0099] The third step is to fabricate the first semiconductor layer 201.
[0100] In this embodiment of the disclosure, the first semiconductor layer 201 may be a P-type semiconductor layer.
[0101] In another example, the first semiconductor layer 201 can be an N-type semiconductor layer.
[0102] The epitaxial structure 20 described above is only an example. In other embodiments, the film layers and the materials of the film layers of the epitaxial structure 20 can be adjusted and optimized according to different semiconductor material systems and device application requirements.
[0103] Figure 4 This is a structural diagram of a light-emitting diode (LED) fabrication process provided in an embodiment of this disclosure. See also... Figure 4 The second semiconductor layer 203, the active layer 202, and the first semiconductor layer 201 are sequentially stacked on the temporary substrate 100.
[0104] S22, Bond the epitaxial structure 20 to the substrate 30.
[0105] In one example, step S22 includes:
[0106] The first step is to fabricate a first bonding layer 204 on the epitaxial structure 20.
[0107] In this embodiment, the material of the first bonding layer 204 is any one of photoresist, benzocyclobutene, and silicone.
[0108] For example, the material of the first bonding layer 204 is silicone.
[0109] The second step is to fabricate a second bonding layer 205 on the substrate 30.
[0110] In this embodiment of the disclosure, the substrate 30 can be any one of a sapphire substrate, a Si substrate, or the like.
[0111] For example, substrate 30 is a Si substrate.
[0112] The third step involves bonding the epitaxial structure 20 to the substrate 30 using the first bonding layer 204 and the second bonding layer 205.
[0113] In this embodiment, the material of the second bonding layer 205 is any one of photoresist, benzocyclobutene, and silicone.
[0114] For example, the material of the second bonding layer 205 is silicone.
[0115] In the embodiments disclosed herein, the bonding temperature can be 280–320°C.
[0116] For example, the bonding temperature is 300°C.
[0117] In this embodiment, if the bonding temperature is too high, it will damage the semiconductor structure; if the bonding temperature is too low, it will be detrimental to the bonding effect. Using the above-mentioned temperature for bonding can ensure a good bonding effect without damaging the semiconductor structure.
[0118] Figure 5 This is a structural diagram of a light-emitting diode manufacturing process provided in an embodiment of this disclosure. See also... Figure 5 The epitaxial structure 20 is connected to the substrate 30 through the first bonding layer 204 and the second bonding layer 205.
[0119] In this embodiment of the disclosure, the epitaxial structure 20 of the light-emitting diode is subjected to stress caused by lattice mismatch and thermal mismatch during the bonding process. The two stress directions are in the same direction, and the superposition of the stresses will cause warping.
[0120] For example, the coefficient of thermal expansion of the sapphire substrate is 5.8 × 10⁻⁶. -6 The coefficient of thermal expansion of the K-type Si (silicon) substrate is 2.5 × 10⁻⁶. -6 / K.
[0121] S23. A transparent film layer 1010 is formed on the side of the temporary substrate 100 away from the epitaxial structure 20.
[0122] In this embodiment of the disclosure, step S23 may include:
[0123] A transparent film layer 1010 is deposited on the side of the temporary substrate 100 away from the epitaxial structure 20.
[0124] In this embodiment of the disclosure, the refractive index of the transparent film layer 1010 is less than the refractive index of the temporary substrate 100.
[0125] In other embodiments, the refractive index of the transparent film layer 1010 may also be equal to or greater than the refractive index of the temporary substrate 100.
[0126] In this embodiment of the disclosure, the thickness of the transparent film layer 1010 can be 200-2000 nm.
[0127] For example, the thickness of the transparent film 1010 is 1500 nm.
[0128] In this embodiment of the disclosure, the transparent film layer 1010 is an insulating transparent material layer.
[0129] In this embodiment of the disclosure, the insulating transparent material layer is a SiO2 layer, a SiN layer, or a Ti2O3 layer;
[0130] Alternatively, the insulating transparent material layer is a stack of at least two of SiO2, SiN and Ti2O3.
[0131] Figure 6 This is a structural diagram of a light-emitting diode (LED) fabrication process provided in an embodiment of this disclosure. See also... Figure 6 The temporary substrate 100 has a transparent film layer 1010 on the side away from the epitaxial structure 20.
[0132] S24. The transparent film layer 1010 is patterned, the middle part of the transparent film layer 1010 is removed, and the part of the transparent film layer 1010 located at the edge of the epitaxial structure 20 is retained to obtain the focusing layer 101.
[0133] In this embodiment of the disclosure, step S24 may include:
[0134] The central part of the transparent film layer 1010 was removed by photolithography to obtain the focusing layer.
[0135] In this embodiment of the disclosure, the focusing layer 101 is annular.
[0136] In this implementation, the warping of the middle position of the light-emitting diode is not severe, and the ring-shaped focusing layer can change the laser focal length at the edge of the light-emitting diode, which is beneficial for the temporary substrate removal.
[0137] For example, the focusing layer 101 is a ring.
[0138] In other embodiments, the focusing layer 101 may also be of other shapes, such as multiple strip structures arranged along the edges.
[0139] In this embodiment of the present disclosure, the ratio of the inner diameter of the focusing layer 101 to the outer diameter of the focusing layer 101 can be from 1:1.5 to 1:2.
[0140] In this implementation, the inner diameter of the focusing layer and the outer diameter of the focusing layer adopt the above ratio, so that the area covered by the focusing layer is close to the warp range of the temporary substrate. This can change the laser focal length of the warp range of the temporary substrate, so that the laser can be focused, which is conducive to the removal of the temporary substrate.
[0141] For example, the ratio of the inner diameter of the focusing layer 101 to the outer diameter of the focusing layer 101 is 1:1.5.
[0142] In this embodiment of the disclosure, the refractive index of the focusing layer 101 is less than the refractive index of the temporary substrate 100.
[0143] In this implementation, the refractive index of the focusing layer is lower than that of the temporary substrate, which allows the laser to be focused and improves the substrate stripping effect.
[0144] In other embodiments, the refractive index of the focusing layer 101 may also be equal to or greater than the refractive index of the temporary substrate 100.
[0145] In this embodiment of the disclosure, the thickness of the focusing layer 101 can be 200 to 2000 nm.
[0146] In this implementation, the aforementioned thickness of the focusing layer allows for laser focusing without being too thick, thus reducing manufacturing costs.
[0147] For example, the thickness of the focusing layer 101 is 1500 μm.
[0148] In this embodiment of the disclosure, the focusing layer 101 is an insulating transparent material layer.
[0149] In this implementation, the focusing layer is an insulating and transparent material layer that allows the laser to pass through the focusing layer during the subsequent laser stripping process, thereby achieving temporary substrate stripping.
[0150] In this embodiment of the disclosure, the insulating transparent material layer is a SiO2 layer, a SiN layer, or a Ti2O3 layer;
[0151] Alternatively, the insulating transparent material layer is a stack of at least two of SiO2, SiN and Ti2O3.
[0152] For example, the insulating transparent material layer is a stack of SiO2 and SiN.
[0153] In this implementation, the focusing layer made of the above-mentioned material has a low refractive index and is a transparent material, allowing the laser to pass through while changing the laser focal length to focus the laser and improve the substrate peeling effect.
[0154] In other examples, the focusing layer 101 may not be annular; for example, only the transparent film layer 1010 of the warped portion of the temporary substrate 100 may be retained to form the focusing layer 101.
[0155] Figure 7 This is a structural diagram of a light-emitting diode manufacturing process provided in an embodiment of this disclosure. See also... Figure 7 The temporary substrate 100 has a focusing layer 101 on the side away from the epitaxial structure 20.
[0156] S25, Laser stripping of temporary substrate 100.
[0157] In this embodiment of the disclosure, the laser stripping technique is used to strip the temporary substrate 100 by pulsed laser irradiation.
[0158] Figure 8 This is a schematic diagram of the laser irradiation path provided in an embodiment of this disclosure. See also... Figure 8 The laser irradiation path is spiral-shaped, and the laser irradiation direction can be from the inside to the outside or from the outside to the inside along the spiral.
[0159] S26. The surface of substrate 30 is treated.
[0160] In the embodiments disclosed herein, light extraction efficiency can be significantly improved by using a process that can roughen or pattern the sapphire substrate (PSS).
[0161] Optionally, after step S26, the method may further include:
[0162] Test the light-emitting diode.
[0163] It is worth noting that LEDs manufactured using the above method have less damage to the epitaxial structure, reduced leakage current, and can improve reverse current.
[0164] The structure provided by the present disclosure allows for adjustment of the focal length at the edge or center defocus position, improving the laser ablation effect, reducing peeling, less tearing, and less damage to the epitaxial structure. Less damage to the epitaxial structure reduces leakage current and can improve reverse resistance (IR).
[0165] Figure 9 This is a schematic diagram of the structure of a light-emitting diode (LED) provided in an embodiment of this disclosure. The LED employs... Figure 2The method shown is used to create it; see [link / reference]. Figure 9 The light-emitting diode includes:
[0166] Substrate 30, first bonding layer 204, second bonding layer 205 and epitaxial structure 20.
[0167] In this embodiment of the disclosure, the epitaxial structure 20 includes a first semiconductor 201, an active layer 202, and a second semiconductor layer 203 stacked sequentially.
[0168] The first semiconductor layer 201, the active layer 202, and the second semiconductor layer 203 are bonded to the substrate 30 through the second bonding layer 205.
[0169] In the embodiments of this disclosure, the substrate 30 can be any one of sapphire substrate, Si substrate, SiC substrate, etc., and this disclosure does not limit the material of the substrate.
[0170] For example, substrate 30 is a Si substrate.
[0171] In other examples, the surface of substrate 30 may also have a roughened surface.
[0172] In this embodiment of the disclosure, the first semiconductor layer 201 can be a P-type semiconductor layer, and the second semiconductor layer 203 can be an N-type semiconductor layer.
[0173] In another example, the first semiconductor layer 201 can be an N-type semiconductor layer, and the second semiconductor layer 203 can be a P-type semiconductor layer.
[0174] In this embodiment of the disclosure, the active layer 202 can be a multi-quantum well layer, for example, the multi-quantum well layer can include multiple periodically alternating stacked quantum well layers and quantum barrier layers.
[0175] In this embodiment, the materials of the first bonding layer 204 and the second bonding layer 205 can be any one of photoresist, benzocyclobutene, and silicone.
[0176] For example, the first bonding layer 204 and the second bonding layer 205 are made of silicone.
[0177] It is worth noting that by adopting the structure provided in this embodiment, the focal length can be adjusted at the edge or center defocus position, thereby improving the laser ablation effect, reducing peeling and tearing, and causing less damage to the epitaxial structure. Less damage to the epitaxial structure reduces leakage current and can improve the reverse current.
[0178] When the epitaxial structure is bonded to the substrate, stress mismatch can cause warping at the edges of the temporary substrate. To address this issue, in this embodiment, the light-emitting diode (LED) is fabricated using the method described above. A transparent film layer is fabricated on the temporary substrate, patterned, and then the central portion of the transparent film layer is removed, leaving only the portion located at the edge of the epitaxial structure, thus obtaining a focusing layer. This focusing layer can alter the focal length at the edge of the temporary substrate, enabling laser focusing. The temporary substrate is also easier to detach and peel off, improving the yield of the LED.
[0179] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.
Claims
1. A method for manufacturing a light-emitting diode, characterized in that, The method includes: An epitaxial structure (20) is grown on a temporary substrate (100); The epitaxial structure (20) is bonded to the substrate (30); A transparent film layer (1010) is formed on the side of the temporary substrate (100) away from the epitaxial structure (20); The transparent film layer (1010) is patterned, the middle part of the transparent film layer (1010) is removed, and the part of the transparent film layer (1010) located at the edge of the epitaxial structure (20) is retained to obtain the focusing layer (101); The temporary substrate (100) is peeled off by irradiating one side of the temporary substrate (100) with the focusing layer (101) using a laser.
2. The method according to claim 1, characterized in that, The focusing layer (101) is annular.
3. The method according to claim 2, characterized in that, The ratio of the inner diameter of the focusing layer (101) to the outer diameter of the focusing layer (101) is 1:1.5 to 1:
2.
4. The method according to any one of claims 1 to 3, characterized in that, The refractive index of the focusing layer (101) is less than that of the temporary substrate (100).
5. The method according to any one of claims 1 to 3, characterized in that, The thickness of the focusing layer (101) is 200-2000 nm.
6. The method according to any one of claims 1 to 3, characterized in that, The focusing layer (101) is an insulating and transparent material layer.
7. The method according to claim 6, characterized in that, The insulating transparent material layer is a SiO2 layer, a SiN layer, or a Ti2O3 layer; Alternatively, the insulating transparent material layer is a stack of at least two of SiO2, SiN and Ti2O3.
8. The method according to any one of claims 1 to 3, characterized in that, The epitaxial structure (20) grown on the temporary substrate (100) includes: A second semiconductor layer (203), an active layer (202), and a first semiconductor layer (201) are sequentially grown on a temporary substrate (100).
9. The method according to any one of claims 1 to 3, characterized in that, Bonding the epitaxial structure (20) to the substrate (30) includes: A first bonding layer (204) is fabricated on the epitaxial structure (20); A second bonding layer (205) is formed on the substrate (30); The epitaxial structure (20) is bonded to the substrate (30) through the first bonding layer (204) and the second bonding layer (205).
10. A light-emitting diode, characterized in that, The light-emitting diode is made according to the method described in any one of claims 1 to 9.