Light emitting diode and light emitting device

Abstract

The invention provides a light-emitting diode and a light-emitting device, the light-emitting diode comprises a substrate and N light-emitting units arranged on the substrate, N is greater than or equal to 2, an isolation channel is arranged between adjacent light-emitting units, and a bridging electrode crosses the isolation channel to connect the adjacent light-emitting units; no less than two bridging electrodes are arranged between the adjacent light-emitting units, and the bridging electrodes are arranged at the two ends of the isolation channel at intervals in the extension direction of the isolation channel. According to the technical scheme, the at least two bridging electrodes are arranged to form a parallel current path, so that the stability of the cross-bridge structure is enhanced, and the product quality problem caused by failure of a single bridging electrode is effectively avoided; in addition, the plurality of bridging electrodes can also relieve the impact on the span bridge when a large voltage passes through, improve the current concentration effect of a traditional single bridging electrode, enable the current distribution to be more uniform, reduce the phenomenon of burst brightness or dark brightness of a single electrode caused by IR, and comprehensively improve the reliability of the light-emitting diode.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a light-emitting diode and a light-emitting device. Background Technology

[0002] High voltage light-emitting diodes (LEDs) integrate multiple light-emitting units within a chip and connect them in series via bridging electrodes, enabling stable light emission under high voltage drive. LED high voltage chips generally adopt a series structure design, which connects multiple chips in series through a single bridge electrode structure, and the chips are effectively electrically isolated from each other using channels.

[0003] Currently, traditional bridging electrodes only bridge in one direction. The current concentration effect of a single bridging electrode is significant, easily leading to high current density in localized areas during ESD impacts, causing electrode burning or breakdown. A single bridging electrode also results in uneven current distribution, affecting the overall luminous efficiency of the product. Furthermore, during the chip manufacturing process or at the customer's end, mechanical stress, thermal expansion, or ESD impacts can easily damage or break the bridging electrode, further increasing the risk of short circuits and affecting product yield. Therefore, it is essential to provide a technical solution to address or improve these problems. Summary of the Invention

[0004] In view of the defects and shortcomings of the existing LED high-voltage chips, this application provides a light-emitting diode and a light-emitting device to reduce the impact of ESD on the bridge and improve the overall stability of the chip.

[0005] In a first aspect, a light-emitting diode is provided, comprising a substrate and N light-emitting units disposed on the substrate, where N ≥ 2, wherein each light-emitting unit contains an epitaxial structure, and the epitaxial structure comprises, from top to bottom, a first semiconductor layer, an active layer, and a second semiconductor layer.

[0006] Along the arrangement direction of the light-emitting units, there is an isolation channel between adjacent light-emitting units, and a plurality of bridging electrodes cross the isolation channel to connect adjacent light-emitting units; there are not less than two bridging electrodes between adjacent light-emitting units, and each bridging electrode is arranged at intervals at both ends of the isolation channel along the extension direction of the isolation channel.

[0007] Secondly, a light-emitting device is provided, the light-emitting device comprising:

[0008] A packaging substrate; at least one light-emitting diode as described in the above technical solution is disposed on the surface of the packaging substrate, and the packaging substrate and the electrode structure of the light-emitting diode are electrically connected.

[0009] Compared with the prior art, the light-emitting diode and light-emitting device provided in this application have the following advantages:

[0010] This application's technical solution enhances the stability of the bridge structure by setting at least two bridging electrodes to form a parallel current path. Even if one bridging electrode is damaged or broken due to mechanical stress, ESD impact, or process defects, the remaining bridging electrodes can still maintain current transmission, effectively avoiding product quality issues caused by single bridging electrode failure. Furthermore, the parallel structure of multiple bridging electrodes can mitigate the impact on the bridge when high voltages pass through, improve the current concentration effect of traditional single bridging electrodes, achieve a more uniform current distribution, reduce the brightening or dimming phenomenon of individual electrodes caused by IR, and comprehensively improve the reliability of high-voltage LEDs. Attached Figure Description

[0011] Figure 1 This is a top view of the structure of a light-emitting diode in the prior art;

[0012] Figure 2 This is a top view of the light-emitting diode provided in Embodiment 1 of this application;

[0013] Figure 3 This is a cross-sectional schematic diagram of the light-emitting diode provided in Embodiment 1 of this application;

[0014] Figure 4 for Figure 2 A schematic cross-sectional view of the light-emitting diode shown along the tangent line A-A'.

[0015] Figure 5 for Figure 2 A schematic cross-sectional view of the light-emitting diode along the B-B' tangent.

[0016] Figure 6 for Figure 2 A partially enlarged schematic diagram of the light-emitting diode shown;

[0017] Figure 7 This is a schematic diagram of one embodiment of the bridging electrode shown in this application;

[0018] Figure 8 This is a schematic diagram of another embodiment of the bridging electrode shown in this application;

[0019] Figure 9 This is a top view of the light-emitting diode provided in Embodiment 2 of this application;

[0020] Figure 10 This is a top view of the light-emitting diode provided in Embodiment 3 of this application;

[0021] Figure 11 This is a schematic diagram of the structure of the light-emitting device provided in Embodiment 4 of this application.

[0022] List of reference numerals in the attached diagram:

[0023] 10. Light-emitting diode; 21. First light-emitting unit; 22. Second light-emitting unit; 23. Third light-emitting unit; 30. Isolation channel;

[0024] 100, Substrate; 200, Epitaxial structure; 201, First semiconductor layer; 202, Active layer; 203, Second semiconductor layer; 300, Bridging electrode; 310, First bridging electrode; 320, Second bridging electrode; 330, Center bridging electrode; 301, First bridging terminal; 302, Second bridging terminal; 303, Bridging portion; 3031, Bridging extension portion; 410, First electrode; 420, Second electrode; 510, First pad; 520, Second pad; 600, Bonding layer; 700, Insulating layer; 800, Protective layer;

[0025] S1, first platform; S2, second platform; K1, first sidewall; K2, second sidewall; α, β: included angles. Detailed Implementation

[0026] like Figure 1 As shown, the existing light-emitting diode 10 includes several light-emitting units, including adjacent first light-emitting units 21 and second light-emitting units 22. The first light-emitting units 21 and second light-emitting units 22 are arranged in the Y direction and are spaced apart from each other by an isolation channel 30. A bridging electrode 300 connects adjacent light-emitting units along the Y direction, electrically connecting the first light-emitting units 21 and second light-emitting units 22. For existing light-emitting diodes, the bridging electrode only bridges in one direction. The current concentration effect of a single bridging electrode is significant. During ESD impact, a high current density is easily formed locally, leading to electrode burning or breakdown. A single bridging electrode also leads to uneven current distribution, affecting the overall luminous efficiency of the product. In addition, during the chip manufacturing process or at the customer's end, mechanical stress, thermal expansion, or ESD impact can easily cause bridge damage or breakage, further increasing the risk of short circuits and affecting product yield.

[0027] To address the aforementioned issues, this application provides a light-emitting diode (LED) comprising a substrate and N light-emitting units disposed on the substrate, where N ≥ 2. Each light-emitting unit contains an epitaxial structure, which, from top to bottom, comprises a first semiconductor layer, an active layer, and a second semiconductor layer. Along the arrangement direction of the light-emitting units, adjacent light-emitting units are separated by an isolation channel, and multiple bridging electrodes cross the isolation channel to connect adjacent light-emitting units. Each adjacent light-emitting unit is separated by at least two bridging electrodes, and each bridging electrode is spaced apart at both ends of the isolation channel along its extension direction.

[0028] By adopting the above technical solution, multiple bridging electrodes form a parallel path. Even if one bridging electrode fails due to mechanical stress or ESD impact, the remaining electrodes can still maintain current transmission, significantly improving the reliability of the device. In addition, the spacing of multiple bridging electrodes can effectively alleviate current concentration, disperse current density, reduce local temperature rise, delay light decay, and also reduce the risk of electrode burning, thus enhancing the product's ESD resistance.

[0029] In an optional embodiment, the plurality of bridging electrodes includes a central bridging electrode and bridging electrodes located on both sides of the central bridging electrode; wherein, the central bridging electrode is disposed in the middle of the light-emitting unit along the extension direction of the isolation channel, and the remaining bridging electrodes are arranged on both sides of the central bridging electrode with the central bridging electrode as the axis along the extension direction of the isolation channel. By adopting the above technical solution, the central electrode and the two bridging electrodes together achieve the current shunting function, optimize the current distribution, further balance the current density, reduce hot spots, and this design can also avoid stress concentration, prevent electrode breakage, and improve the mechanical stability of the bridging electrodes.

[0030] In an optional embodiment, the first semiconductor layer has an upper surface, which is a first mesa; the second semiconductor layer has an upper surface, the portion of which is adjacent to the first mesa and not covered by the first semiconductor layer and the active layer is the second mesa.

[0031] The horizontal projection of the first platform is located within the horizontal projection range of the second platform. Along the X direction, the edge of the first platform and the edge of the second platform have a distance D, where 7μm≤D≤100μm.

[0032] The bridging electrode spans the isolation channel, connecting the first mesa of the nth light-emitting unit and the second mesa of the (n+1)th light-emitting unit. The portion of the bridging electrode covering the nth light-emitting unit extends from the first mesa along the X direction to the covered portion of the second mesa, where 1 ≤ n < N. The light-emitting units are arranged in the Y direction, and the direction perpendicular to the Y direction is the X direction. The bridging electrode simultaneously covers both mesas of the light-emitting unit, significantly reducing the possibility of short-circuit failure and ensuring a continuous current path. Even if the electrode portion above the first mesa fails, the electrode structure above the second mesa can still provide a good electrical path, improving the reliability of the light-emitting diode.

[0033] In an optional embodiment, the bridging electrode includes a first bridging terminal connected to the nth light-emitting unit, a second bridging terminal connected to the (n+1)th light-emitting unit, and a bridging portion between the first bridging terminal and the second bridging terminal. The portion of the bridging portion covering the first and second mesa in the X direction is a bridging extension, where 1 ≤ n < N. The bridging electrodes are distributed at both ends of the isolation channel and are symmetrically arranged within a tolerance range. This approximately symmetrical distribution reduces electrode offset and enhances mechanical stability and the uniformity of current distribution.

[0034] In an optional embodiment, the tolerance range of the first bridging terminal and / or the second bridging terminal of the bridging electrode in the Y direction is ±0.15L, where L is the dimension from the first bridging terminal to the second bridging terminal in the Y direction.

[0035] In an optional embodiment, the tolerance range of the bridging electrode in the X direction is ±0.15W, where W is the dimension of the bridging extension in the X direction.

[0036] In an optional embodiment, the horizontal projected area of ​​the bridging extension on the second tabletop accounts for 1.6% to 30% of the horizontal projected area of ​​the second tabletop. A bridging extension with sufficient area is necessary to achieve good electrical transmission, while also avoiding excessive space occupation and maintaining a compact structure.

[0037] In an optional embodiment, the bridging extension has a width W in the X direction, wherein the portion covering the first platform has a width W1, and the portion covering the second platform has a width W2, with 20% ≤ W2 / W ≤ 80%. A reasonable width or area ratio optimizes the current distribution between the first and second platforms, reduces local overload, avoids excessive wear on certain electrodes, and extends the lifespan of the light-emitting diode.

[0038] In an optional implementation, 4μm ≤ W2 ≤ 60μm. Sufficient width ensures the current transport capability of the second mesa, while avoiding excessive width that could affect chip size, thus adapting to high-density packaging requirements.

[0039] In an optional implementation, 1μm ≤ W1 ≤ 30μm. A suitable width ensures reliable connection to the first mesa and the strength of the electrode structure.

[0040] In an optional embodiment, the bridging extension has a length L1 in the Y direction, where 5μm ≤ L1 ≤ 95μm. A suitable range for L1 is beneficial for stable current transmission.

[0041] In an optional embodiment, the bridging extension has a thickness h1 on the second platform, where 0.5 μm ≤ h1 ≤ 8 μm. This avoids the bridging extension from being too thin and causing breakage, achieving a balance between conductivity and strength.

[0042] In an optional embodiment, the nth light-emitting unit has a first electrode disposed on the first platform, and the (n+1)th light-emitting unit has a second electrode disposed on the second platform; the first electrode and / or the second electrode includes electrode ends located at both ends of the electrode and connected to the bridging electrode, and electrode connection portions connecting the electrode ends, wherein the electrode connection portions are parallel to the isolation channel, so that the current distribution is more uniform.

[0043] In an optional embodiment, the isolation channel has a width g in the Y direction, where 3μm ≤ g ≤ 30μm. Sufficient width prevents short circuits between adjacent cells, improving product safety. Additionally, it avoids excessive width that would reduce chip area, thus meeting miniaturization requirements.

[0044] In an optional embodiment, the first mesa and the second mesa of the nth light-emitting unit have a first sidewall, which forms an angle α with the horizontal surface; the second mesa of the nth light-emitting unit has a second sidewall with the isolation channel, which forms an angle β with the horizontal surface, wherein 35°≤α≤75°, and / or 50°≤β≤85°; 1≤n≤N. A suitable sidewall angle ensures close contact between the bridging electrode and the mesa sidewall, ensuring the strength of the electrode structure.

[0045] In an optional embodiment, the bridging electrode has a thickness h2 on the isolation channel, where 0.5 μm ≤ h2 ≤ 8 μm. An appropriate thickness of the bridging electrode within the isolation channel can prevent the electrode from breaking due to mechanical stress, ensuring the strength of the electrode structure.

[0046] In an optional embodiment, the size of the light-emitting diode is no greater than 100μm*100μm. This is suitable for products such as mini-LED and Micro-LED.

[0047] This application also provides a light-emitting device, the light-emitting device comprising:

[0048] Packaging substrate;

[0049] At least one light-emitting diode (LED) as described in any of the above technical solutions is disposed on the surface of the packaging substrate, and the packaging substrate and the electrode structure of the LED are electrically connected. After packaging, it is suitable for various lighting and display scenarios, such as backlight modules and automotive lights.

[0050] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application. It should be noted that, unless otherwise specified, the following embodiments and features in the embodiments can be combined with each other.

[0051] It should be noted that the illustrations provided in the embodiments of this application are merely schematic representations of the basic concept of this application. Although the illustrations only show components relevant to this application and are not drawn according to the actual number, shape, and size of components in implementation, the shape, quantity, and proportion of each component can be arbitrarily changed in actual implementation, and the layout of the components may also be more complex. The structures, proportions, sizes, etc., shown in the accompanying drawings are only used to complement the content disclosed in the specification for those skilled in the art to understand and read, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationships, or adjustments to the size, without affecting the effects and purposes that this application can produce, should still fall within the scope of the technical content disclosed in this application.

[0052] Example 1:

[0053] This embodiment provides a light-emitting diode 10, which is a high-voltage light-emitting diode. (See [link]). Figure 2 and Figure 3 The light-emitting diode 10 includes a substrate 100 and N light-emitting units disposed on the substrate 100, where N ≥ 2. Figure 2 and Figure 3 In the high-voltage light-emitting diode provided as an example with N=2, two adjacent light-emitting units are defined as the first light-emitting unit 21 and the second light-emitting unit 22. The first light-emitting unit 21 and the second light-emitting unit 22 are connected sequentially through a bridging electrode 300 according to a preset arrangement direction and are separated by an isolation channel 30. For ease of description, the arrangement direction of the light-emitting units is defined as the Y direction, and the direction perpendicular to the Y direction is defined as the X direction. For a rectangular light-emitting unit, the X direction is also the extension direction of the isolation channel 30.

[0054] See also Figure 2 and Figure 3The substrate 100 can be an insulating substrate or a metal substrate, etc. In this embodiment, a sapphire substrate is selected. The first light-emitting unit 21 and the second light-emitting unit 22 on the substrate 100 both include an epitaxial structure 200. The epitaxial structure 200 includes a first semiconductor layer 201, an active layer 202 and a second semiconductor layer 203 from top to bottom. The first semiconductor layer 201 has an upper surface, which is a first mesa S1; the second semiconductor layer 203 has an upper surface, which is adjacent to the first mesa S1 and is not covered by the first semiconductor layer 201 and the active layer 202, and is a second mesa S2. In the two adjacent light-emitting units, the bridging electrode 300 extends from the first mesa S1 of the first light-emitting unit 21 and extends through the sidewall and bottom surface of the isolation channel 30 to the second mesa S2 of the second light-emitting unit 22, realizing the series connection of adjacent light-emitting units. The first semiconductor layer 201 is an N-type semiconductor layer, and the second semiconductor layer 203 is a P-type semiconductor layer. The N-type first semiconductor layer 201 provides electrons to the active layer 202 by doping with N-type impurities, and the P-type second semiconductor layer 203 provides holes to the active layer 202 by doping with P-type impurities. The semiconductor stack 200 can be a III-V compound semiconductor material layer. For example, the first semiconductor layer 201 and the second semiconductor layer 203 can be aluminum indium phosphide (AlInP) or aluminum gallium indium phosphide (AlGaInP) based material layers, or a group III nitride material layer. The active layer 202 can be a gallium arsenide (GaAs) series, aluminum gallium indium nitride (AlGaInN) series, aluminum indium phosphide (AlInP) or aluminum indium gallium phosphide (AlGaInP) series semiconductor material. This embodiment is not limited to these. It is understood that the N-type semiconductor layer, multilayer quantum well layer, and P-type semiconductor layer are only the basic building blocks of the semiconductor stack. Based on this, the semiconductor stack can also include other functional structural layers that optimize the performance of the light-emitting diode, such as ohmic contact layers or current spreading layers. In this embodiment, the light-emitting diode is preferably a flip-chip light-emitting diode, and more preferably a red light-emitting diode or an infrared light-emitting diode.

[0055] See also Figure 2 and Figure 3The bridging electrode 300 includes two bridging electrodes: a first bridging electrode 310 and a second bridging electrode 320. The first bridging electrode 310 and the second bridging electrode 320 are arranged at intervals at both ends of the isolation channel 30 along its extension direction, i.e., the X-direction. The two bridging electrodes form a parallel path, so even if one bridging electrode fails due to mechanical stress or ESD impact, the other electrode can still maintain current transmission. Furthermore, the interval arrangement of the two bridging electrodes effectively alleviates current concentration, as the current is transmitted through two paths, dispersing the current density, reducing local temperature rise, and minimizing the risk of electrode scorching. Further, the first bridging electrode 310 and the second bridging electrode 320 are made of the same material, namely one or an alloy or combination of Ti, Pt, Au, and Al.

[0056] See Figure 2 , Figure 3 and Figure 6 The horizontal projection of the first platform S1 is located within the horizontal projection range of the second platform S2. Along the X direction, the edge of the first platform S1 and the edge of the second platform S2 have a distance D, where 7μm≤D≤100μm. This distance affects the difficulty of setting the bridging electrode 300 between the first platform S1 and the second platform S2. Furthermore, 10μm≤D≤40μm, for example, the distance D can be 15μm, 20μm, 30μm, or 35μm. The first bridging electrode 310 and the second bridging electrode 320 both cross the isolation channel 30 and connect the first platform S1 of the first light-emitting unit 21 and the second platform S2 of the second light-emitting unit 22, respectively. The portion of the first bridging electrode 310 or the second bridging electrode 320 covering the first light-emitting unit 21 extends from the first platform along the X direction to the portion of the second platform covered.

[0057] Optionally, Figure 2 The diagram illustrates a structure where the first bridging electrode 310 and the second bridging electrode 320, covering portions of the first light-emitting unit 21, both extend along the X-direction from the first mesa to the second mesa of the covered portion. The portions of the first bridging electrode 310 and the second bridging electrode 320 covering the second mesa can be perfectly symmetrically arranged to improve structural stability and ensure more uniform current distribution. It is understood that the portions of the two bridging electrodes covering the second mesa can also be asymmetrically arranged or have different coverage areas; in actual products, the covered portion is not strictly symmetrically designed.

[0058] Optionally, Figure 7 The diagram shows a structure where the first bridging electrode 310 covers a portion of the first light-emitting unit 21 extending from the first mesa along the X direction to the second mesa, but the second bridging electrode 320 covers a portion of the first light-emitting unit 21 but not the second mesa. That is, when the electrode portion above the first mesa fails, a good current path for the light-emitting diode is ensured only by a single-sided bridging electrode, thereby improving product reliability.

[0059] Specifically, each bridging electrode includes a first bridging terminal 301 connected to the first light-emitting unit 21, a second bridging terminal 302 connected to the second light-emitting unit 22, and a bridging portion 303 between the first bridging terminal 301 and the second bridging terminal 302. The portion of the bridging portion 303 covering the first mesa S1 and the second mesa S2 in the X direction is a bridging extension portion 3031. That is, the bridging extension portions 3031 of the two bridging electrodes simultaneously cover the two mesas of the light-emitting unit, which greatly reduces the possibility of short-circuit failure of the bridging electrodes, ensures the continuity of the current path, and when the bridging electrode portion above the first mesa fails, the bridging electrode structure above the second mesa can still play a good electrical path role, thereby improving the reliability of the light-emitting diode.

[0060] See also Figures 2 to 3 , Figures 6 to 8 As can be seen, both bridging electrodes are distributed at both ends of the isolation channel 30 and are symmetrically arranged within the tolerance range. Let L be the distance in the Y direction from the first bridging end 301 to the second bridging end 302. Then, the tolerance range in the Y direction between the first bridging end 301 of the first bridging electrode 310 and the first bridging end 301 of the second bridging electrode 320 is ±0.15L; the tolerance range in the Y direction between the second bridging ends 302 of the first bridging electrode 310 and the second bridging end 302 of the second bridging electrode 320 is also ±0.15L. Figure 8 A schematic diagram of the electrode arrangement under extreme tolerance conditions in the Y direction is shown. Further, the tolerance range in the Y direction for the first bridging terminal 301 of the first bridging electrode 310 and the first bridging terminal 301 of the second bridging electrode 320 is ±0.1L; the tolerance range in the Y direction for the second bridging terminals 302 of the first bridging electrode 310 and the second bridging terminal 302 of the second bridging electrode 320 is also ±0.1L. Even further, the first bridging electrode 310 and the second bridging electrode 320 are strictly symmetrically distributed in the Y direction to minimize electrode offset and enhance mechanical stability and the uniformity of current distribution. The dimension of the bridging extension 3031 in the X direction is defined as W. Figure 7 and 8 Both diagrams show the asymmetric arrangement of the bridging extension 3031 in the X direction. The symmetry tolerance range of the first bridging electrode 310 and the second bridging electrode 320 in the X direction is ±0.15W. Further, the symmetry tolerance range of the first bridging electrode 310 and the second bridging electrode 320 in the X direction is ±0.1W. Even further, the first bridging electrode 310 and the second bridging electrode 320 are strictly symmetrically arranged in both the X and Y directions.

[0061] See also Figures 2 to 3 , Figures 6 to 8The length L of the bridging electrode in the Y direction ranges from 18 μm to 110 μm, and the bridging extension 3031 has a length L1 in the Y direction, where 5 μm ≤ L1 ≤ 95 μm. An extension length within a suitable range is beneficial for stable current transmission. Further, 5 μm ≤ L1 ≤ 85 μm. For example, the length L1 can be 10 μm, 30 μm, 50 μm, or 80 μm.

[0062] In an optional embodiment, the bridging extension 3031 has a width W in the X direction, wherein the portion covering the first mesa S1 has a width W1, and the portion covering the second mesa S2 has a width W2, with 20% ≤ W2 / W ≤ 80%. This range ensures that the bridging extension 3031 has a suitable area ratio, reduces local overload, avoids excessive wear of certain electrodes, and does not affect the current transmission on the first mesa S1. In an optional embodiment, 4μm ≤ W2 ≤ 60μm. If it is less than 4μm, the bridging extension 3031 is too narrow, and the current is difficult to transmit effectively on the second mesa S2. If it is greater than 60μm, it will affect the current transmission on the first mesa S1 and may also easily cause voltage problems. Further, 5μm ≤ W2 ≤ 25μm, for example, the width W2 can be 10μm, 15μm, 20μm, or 25μm. In an optional implementation, 1μm ≤ W1 ≤ 30μm. A reasonable width ensures reliable connection with the first mesa and the strength of the electrode structure. If W1 is less than 1μm, it is not conducive to current transmission on the first mesa S1 and may easily lead to an excessively large bridging extension 3031, which may exceed the second mesa S2 and cause voltage and ESD problems. If W1 is greater than 30μm, the current is concentrated at the first mesa S1, and only a small amount of current can be transmitted at the second mesa S2, which is not conducive to the light-emitting performance of the high-voltage light-emitting diode and makes it difficult to prevent short-circuit problems. Further, 1μm ≤ W1 ≤ 20μm, for example, the width W1 can be 2μm, 5μm, 10μm or 15μm.

[0063] See also Figures 2 to 3 , Figures 6 to 8 The total horizontal projected area of ​​the two bridging extensions 3031 of the two bridging electrodes on the second platform S2 accounts for 1.6% to 30% of the horizontal projected area of ​​the second platform. That is, the horizontal projected area of ​​each bridging extension 3031 accounts for 0.8% to 15% of the horizontal projected area of ​​the second platform. If this area ratio is too small, effective current transmission cannot be provided on the second platform S2. If this area ratio is too large, the remaining part of the bridging electrode 300 on the first platform S1 will be too small, which will affect the transmission of the bridging electrode 300 on the first platform S1. Furthermore, this area ratio is 6% to 16% to achieve better electrical transmission effect, while also avoiding excessive space occupation and ensuring a compact product structure.

[0064] See Figures 2 to 4 The bridging extensions 3031 of the first bridging electrode 310 and the second bridging electrode 320 each have a thickness h1 on the second mesa S2, where 0.5 μm ≤ h1 ≤ 8 μm. If this thickness is too thin, effective current transmission cannot be provided, and structural strength is difficult to guarantee. Each light-emitting unit has a first sidewall K1 between the first mesa S1 and the second mesa S2. This first sidewall K1 forms an angle α with the horizontal surface, where 35° ≤ α ≤ 75°. A suitable sidewall angle ensures close contact between the bridging electrode and the mesa sidewall, ensuring the electrode structural strength. Furthermore, the thickness h1 of the bridging electrode on the second mesa S2 should be adapted to the angle α, for example, 1.5 μm ≤ h1 ≤ 3 μm and 40° ≤ α ≤ 70°, to effectively avoid breakage due to excessively thin bridging extensions, achieving a good balance between current transmission performance and structural strength.

[0065] See also Figures 2 to 4 The first bridging electrode 310 and the second bridging electrode 320 both have a thickness h2 on the isolation channel 30, where 0.5 μm ≤ h2 ≤ 8 μm. This appropriate thickness within the isolation channel 30 prevents electrode breakage due to mechanical stress, ensuring the strength of the electrode structure. Each light-emitting unit has a second sidewall K2 between its second mesa S2 and the isolation channel. This second sidewall K2 forms an angle β with the horizontal surface, where 50° ≤ β ≤ 85°. This suitable sidewall angle ensures close contact between the bridging electrode and the mesa sidewall, further ensuring the strength of the electrode structure. The thickness h2 of the bridging electrode on the isolation channel should be adapted to the angle of the second sidewall K2, for example, 1.5 μm ≤ h2 ≤ 3 μm and 65° ≤ β ≤ 85°.

[0066] See Figure 2 The first light-emitting unit 21 has a first electrode 410 disposed on the first mesa S1, and the second light-emitting unit 22 has a second electrode 420 disposed on the second mesa S2. Both the first electrode 410 and the second electrode 420 include electrode ends located at both ends of the electrode and connected to bridging electrodes, and electrode connection portions connecting the electrode ends. The electrode connection portions are parallel to the isolation channel 30 to make the current distribution more uniform. Further, the material of the first electrode 410 is selected from one or more alloys or combinations of Au, Pt, Ti, Ge, and Ni; the material of the second electrode 420 is selected from one or more alloys or combinations of Au, Be, Ti, and Pt.

[0067] In an optional embodiment, the isolation channel 30 can be an exposed substrate or an oxide insulating layer. The isolation channel 30 has a width g in the Y direction, where 3μm ≤ g ≤ 30μm. If this width is too small, it is not conducive to the arrangement of the light-emitting units, increases the difficulty of the process, and also results in thinner metal deposition on the sidewalls of the bridging electrode, making short circuits more likely. If the width is too large, it will lead to an excessively large area of ​​the light-emitting diode, and the bridging electrode 300 will have to be longer, which can easily lead to ESD or other voltage problems. Further, 3μm ≤ g ≤ 25μm, for example, the width of the isolation channel 30 can be 5μm, 10μm, 15μm, or 20μm, to balance improving product safety and adapting to miniaturization requirements.

[0068] See Figure 3 A bonding layer 600 is also disposed on the substrate 100. The function of the bonding layer 600 is to bond the substrate 100 to a plurality of light-emitting units together. The bonding layer 600 can be a metal bonding layer or an oxide bonding layer. Furthermore, the bonding layer 600 can be roughened to obtain better light emission effect.

[0069] See also Figure 3 An insulating layer 700 is also provided outside the epitaxial structure 200. The insulating layer 700 can protect the epitaxial structure and cover the isolation channel 30, thereby better achieving electrical isolation between the first light-emitting unit 21 and the second light-emitting unit 22. In optional embodiments, the insulating layer 700 can be a single-layer structure, such as magnesium fluoride or silicon nitride; it can also be a double-layer structure, such as a DBR reflector composed of SiO2 and TiO2; or it can be a multi-layer structure, such as a combination of at least two of the following structures: magnesium fluoride, silicon nitride, SiO2, TiO2, ZnO2, ZrO2, Cu2O3, etc.

[0070] See also Figure 3 A protective layer 800 is also provided between the bridging electrode 300 and the epitaxial structure 200 to prevent short circuits at the electrode. The material of the protective layer 800 can be one or more of magnesium fluoride, silicon nitride, or silicon oxide.

[0071] See also Figure 3 The high-voltage light-emitting diode also includes a first pad 510 disposed on the first electrode 410 and a second pad 520 disposed on the second electrode 420. The materials of the first pad 510 and the second pad 520 are one or more of Ti / Al / Ni / Au / Pt / Sn.

[0072] The high-voltage light-emitting diode provided in this embodiment has a size of no more than 100μm*100μm, which is especially suitable for the needs of high-density integrated products such as mini-LED and Micro-LED.

[0073] Example 2:

[0074] See Figure 9 This embodiment also provides a light-emitting diode 10, which can also be a high-voltage light-emitting diode, including a substrate 100 and N light-emitting units disposed on the substrate 100, where N≥2. Figure 9 In the high-voltage light-emitting diode provided as an example with N=3, adjacent light-emitting units are defined as the first light-emitting unit 21, the second light-emitting unit 22, and the third light-emitting unit 23, respectively. The three light-emitting units are connected sequentially by bridging electrodes according to a preset arrangement direction and are separated by an isolation channel 30. The bridging electrode between each two adjacent light-emitting units includes two bridging electrodes, namely the first bridging electrode 310 and the second bridging electrode 320. The two bridging electrodes are arranged at intervals at both ends of the isolation channel 30 along the extension direction of the isolation channel 30. The other similarities between the technical solution provided in this embodiment and that in Embodiment 1 will not be repeated. It is understood that the technical solution provided in this embodiment is also applicable to various product specifications with N=4, 5, 6...

[0075] Example 3:

[0076] See Figure 10 This embodiment provides a light-emitting diode 10, which can also be a high-voltage light-emitting diode, including a substrate 100 and N light-emitting units disposed on the substrate 100, where N≥2. Figure 10 In the high-voltage light-emitting diode provided with N=2 as an example, two adjacent light-emitting units are defined as the first light-emitting unit 21 and the second light-emitting unit 22. The first light-emitting unit 21 and the second light-emitting unit 22 are connected sequentially through the bridging electrode 300 according to a preset arrangement direction and are separated by the isolation channel 30.

[0077] The bridging electrode 300 includes a central bridging electrode 330 and bridging electrodes located on both sides of the central bridging electrode 330, namely a first bridging electrode 310 and a second bridging electrode 320. The central bridging electrode 330 is positioned in the middle of the light-emitting unit along the extension direction of the isolation channel 30. The first bridging electrode 310 and the second bridging electrode 320 are arranged on both sides of the central bridging electrode 330, spaced apart along the extension direction of the isolation channel 30 (i.e., in the X direction). The three bridging electrodes form a parallel path, further ensuring product stability compared to the dual-bridge structure provided in Embodiments 1 and 2. Even if one bridging electrode fails due to mechanical stress or ESD impact, the remaining electrodes can still maintain current transmission. Furthermore, compared to the two bridging electrodes located at both ends, the central bridging electrode 330 and the two side electrodes jointly achieve current shunting. The central bridging electrode 330 in the middle further optimizes the current distribution and effectively alleviates current concentration. The current is transmitted through three paths, dispersing the current density, reducing local temperature rise, and minimizing the risk of electrode scorching. In addition, this design can also avoid stress concentration, prevent electrode breakage, and improve the mechanical stability of the bridging electrode. The other similarities between the technical solution provided in this embodiment and those in Embodiments 1 and 2 will not be repeated here. It is understood that the technical solution provided in this embodiment is also applicable to various product specifications with N=4, 5, 6…

[0078] See also Figure 10 The central bridging electrode 330 also has a bridging end that spans the first light-emitting unit 21 and the second light-emitting unit 22, and a central bridging portion between the two bridging ends. The width of the central bridging portion is not less than the width of the bridging extension 3031 of the first bridging electrode 310 and the second bridging electrode 320.

[0079] Example 4:

[0080] See Figure 11 This embodiment provides a light-emitting device, which is a flip-chip LED product, including a packaging substrate 40; at least one light-emitting diode 10 disposed on the surface of the packaging substrate 40, and the packaging substrate 40 and the electrode structure of the light-emitting diode 10 are electrically connected, specifically through a first pad 510 and a second pad 520. The light-emitting diode 10 is the light-emitting diode provided in embodiments one to three of this application, and the light-emitting diode is a high-voltage light-emitting diode. After packaging, the product is suitable for various lighting and display scenarios such as backlight modules and automotive lights.

[0081] In summary, the light-emitting diode and light-emitting device provided in this application effectively overcome the various shortcomings of the prior art and have high industrial application value.

[0082] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.

Claims

1. A light-emitting diode, comprising a substrate and N light-emitting units disposed on the substrate, N≥2, wherein each light-emitting unit contains an epitaxial structure, the epitaxial structure comprising, from top to bottom, a first semiconductor layer, an active layer, and a second semiconductor layer, characterized in that, Along the arrangement direction of the light-emitting units, there is an isolation channel between adjacent light-emitting units, and a plurality of bridging electrodes cross the isolation channel to connect adjacent light-emitting units; there are not less than two bridging electrodes between adjacent light-emitting units, and each bridging electrode is arranged at intervals at both ends of the isolation channel along the extension direction of the isolation channel.

2. The light-emitting diode according to claim 1, characterized in that, The plurality of bridging electrodes include a central bridging electrode and bridging electrodes located on both sides of the central bridging electrode; wherein, the central bridging electrode is disposed in the middle of the light-emitting unit along the extension direction of the isolation channel, and the remaining bridging electrodes are respectively arranged on both sides of the central bridging electrode along the extension direction of the isolation channel with the central bridging electrode as the axis.

3. The light-emitting diode according to claim 1, characterized in that, The first semiconductor layer has an upper surface, which is a first mesa; the second semiconductor layer has an upper surface, the portion of which is adjacent to the first mesa and not covered by the first semiconductor layer and the active layer is the second mesa. The horizontal projection of the first platform is located within the horizontal projection range of the second platform. Along the X direction, the edge of the first platform and the edge of the second platform have a distance D, 6μm≤D≤70μm. The bridging electrode crosses the isolation channel and connects the first platform of the nth light-emitting unit and the second platform of the (n+1)th light-emitting unit respectively. The portion of the bridging electrode covering the nth light-emitting unit extends from the first platform along the X direction to the covered portion of the second platform, where 1≤n<N. The light-emitting units are arranged in the Y direction, and the direction perpendicular to the Y direction is the X direction.

4. The light-emitting diode according to claim 1, characterized in that, The bridging electrode includes a first bridging terminal connected to the nth light-emitting unit, a second bridging terminal connected to the (n+1)th light-emitting unit, and a bridging portion between the first bridging terminal and the second bridging terminal. The portion of the bridging portion covering the first platform and the second platform in the X direction is a bridging extension, where 1 ≤ n < N. The bridging electrodes are distributed at both ends of the isolation channel and are symmetrically arranged within the tolerance range. The tolerance range of the first bridging terminal and / or the second bridging terminal of the bridging electrode in the Y direction is ±0.15L, where L is the dimension from the first bridging terminal to the second bridging terminal in the Y direction.

5. The light-emitting diode according to claim 1, characterized in that, The bridging electrode includes a first bridging terminal connected to the nth light-emitting unit, a second bridging terminal connected to the (n+1)th light-emitting unit, and a bridging portion between the first bridging terminal and the second bridging terminal. The portion of the bridging portion covering the first platform and the second platform in the X direction is a bridging extension, where 1 ≤ n < N. The bridging electrodes are distributed at both ends of the isolation channel and are symmetrically arranged within a tolerance range. The tolerance range of the bridging electrodes in the X direction is ±0.15W, where W is the dimension of the bridging extension in the X direction.

6. The light-emitting diode according to claim 4 or 5, characterized in that, The bridging extension has a horizontal projected area of ​​1.6% to 30% of the horizontal projected area of ​​the second tabletop.

7. The light-emitting diode according to claim 4 or 5, characterized in that, The bridging extension has a width W in the X direction, wherein the portion covering the first tabletop has a width W1, and the portion covering the second tabletop has a width W2, with 20% ≤ W2 / W ≤ 80%.

8. The light-emitting diode according to claim 7, characterized in that, 4μm≤W2≤60μm.

9. The light-emitting diode according to claim 7, characterized in that, 10μm≤W1≤30μm.

10. The light-emitting diode according to claim 4 or 5, characterized in that, The bridging extension has a length L1 in the Y direction, where 5μm≤L1≤95μm.

11. The light-emitting diode according to claim 4 or 5, characterized in that, The bridging extension has a thickness h1 on the second platform, where 0.5μm≤h1≤8μm.

12. The light-emitting diode according to claim 1, characterized in that, The nth light-emitting unit has a first electrode disposed on the first platform, and the (n+1)th light-emitting unit has a second electrode disposed on the second platform; the first electrode and / or the second electrode includes electrode ends located at both ends of the electrode and connected to the bridging electrode, and electrode connection portions connected to the electrode ends, wherein the electrode connection portions are in a parallel position to the isolation channel.

13. The light-emitting diode according to claim 1, characterized in that, The isolation channel has a width g in the Y direction, where 3μm≤g≤30μm.

14. The light-emitting diode according to claim 1, characterized in that, The first platform and the second platform of the nth light-emitting unit have a first sidewall, which has an angle α with the horizontal mask; the second platform of the nth light-emitting unit has a second sidewall with the isolation channel, which has an angle β with the horizontal mask, wherein 35°≤α≤75°, and / or 50°≤β≤85°; 1≤n≤N.

15. The light-emitting diode according to claim 1, characterized in that, The bridging electrode has a thickness h2 on the isolation channel, where 0.5μm≤h2≤8μm.

16. The light-emitting diode according to claim 1, characterized in that, The size of the light-emitting diode is no greater than 100μm*100μm.

17. A light-emitting device, characterized in that, The light-emitting device includes: Packaging substrate; At least one light-emitting diode according to any one of claims 1 to 16 is disposed on the surface of the encapsulation substrate, wherein the encapsulation substrate and the electrode structure of the light-emitting diode are electrically connected.

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