A MEMS probe based on a parylene insulation layer and a preparation method thereof

Abstract

The application discloses a MEMS probe based on a parylene insulation layer and a preparation method thereof. The parylene-based MEMS probe comprises a MEMS probe and a parylene insulation layer covering the middle part of the MEMS probe. The preparation raw material of the parylene insulation layer comprises parylene and a coupling agent. The preparation method comprises the following steps: performing chemical vapor deposition by using the parylene and the coupling agent to arrange the parylene insulation layer on the surface of the MEMS probe; then arranging a photoresist layer at the middle part, developing and etching the needle tip and the needle tail of the MEMS probe, and removing the photoresist layer and the parylene insulation layer on the surface of the needle tip and the needle tail; and finally removing the remaining photoresist layer to obtain the MEMS probe based on the parylene insulation layer. The parylene insulation layer is arranged at the middle part of the MEMS probe, and the MEMS probe based on the parylene insulation layer is prepared. The MEMS probe based on the parylene insulation layer has excellent performance and the preparation method is simple.

Description

Technical Field

[0001] This invention belongs to the field of MEMS probe technology, specifically relating to a MEMS probe based on a pyrelin insulating layer and its fabrication method. Background Technology

[0002] With the development of semiconductor technology, the size and number of bumps on chips are decreasing, and the dielectric layer between the pad metal layer and the low-k layer is becoming thinner. This further necessitates the use of probes with smaller size and contact force in wafer testing. MEMS (Micro-electro-mechanical Systems) is an industrial technology that integrates microelectronics and mechanical engineering, operating within the micrometer scale. Using MEMS technology for probe fabrication not only easily obtains metal microstructures with diameters below 25.4 μm, but also offers advantages in batch processing, resulting in probe structures with good consistency and very high array planarity. Combining MEMS technology with vertical probes capable of array arrangement and meeting bump testing requirements can simultaneously satisfy testing needs such as fine pitch, flexible testing range, high probe count, and high density.

[0003] Probes are used to communicate with chips during electrical testing on wafers, and to feed back test data to the testing equipment for comparison. This allows the probes to detect whether the electrical characteristics and logic functions of the wafer meet the requirements. By testing, unqualified wafers are rejected, thus avoiding the packaging of unqualified chips and the generation of avoidable defects, which would result in wasted resources.

[0004] MEMS probes are designed for the SOC testing market. These products have relatively small pitches, typically between 60μm and 60μm, with a future trend towards even smaller pitches. Due to the small pitch, the gaps between probes are also decreasing. MEMS probes bend during the pressing process, but the bending patterns of two adjacent probes may not be identical, posing a risk of short circuits in actual testing.

[0005] Therefore, the fabrication of MEMS probes and how to fabricate high-performance MEMS probes with insulating layers have become urgent technical problems to be solved. Summary of the Invention

[0006] To address the shortcomings of existing technologies, the present invention aims to provide a MEMS probe based on a phenelin insulating layer and its fabrication method. The present invention fabricates a MEMS probe based on a phenelin insulating layer by setting a phenelin insulating layer in the middle of the probe. This phenelin insulating layer-based MEMS probe exhibits excellent performance, and its fabrication method is simple.

[0007] To achieve this objective, the present invention adopts the following technical solution:

[0008] In a first aspect, the present invention provides a MEMS probe based on a perine insulating layer, wherein the perine-based MEMS probe includes a MEMS probe and a perine insulating layer covering the middle portion of the MEMS probe.

[0009] The raw materials for preparing the pyrene insulation layer include pyrene and a coupling agent.

[0010] This invention prepares a MEMS probe based on a penetrating insulating layer by using penetrating and a coupling agent to form a penetrating insulating layer in the middle of the MEMS probe.

[0011] In this invention, there are increasingly higher requirements for insulation performance in many fields such as electronic components. Traditional insulating materials and processes suffer significant performance degradation in complex environments, such as high humidity and strong acid / alkali conditions. However, pyrelin materials possess excellent insulation and chemical stability, making them ideal for preparing insulating layers for MEMS probes, resulting in high-performance MEMS probes. The use of coupling agents offers the following advantages: ① Coupling agents can form chemical bonds between the pyrelin coating and the MEMS probe substrate surface, enhancing adhesion (e.g., on metal substrates, coupling agents can form chemical bonds with oxides on the metal surface while simultaneously bonding tightly with the pyrelin layer). ② Improved wettability of the MEMS probe surface, reducing the surface energy of the MEMS probe substrate surface, allowing pyrelin molecules to better wet, spread, and adhere to the substrate surface, thus forming a more uniform and continuous thin film coating. ③ Increased deposition efficiency: The effective action of coupling agents makes the deposition of pyrelin molecules on the MEMS probe substrate surface more orderly and efficient, reducing deposition defects and repeated deposition processes caused by molecular aggregation and uneven adsorption, thereby improving deposition efficiency, shortening the production cycle, and reducing production costs to a certain extent.

[0012] It should be noted that the MEMS probe provided by this invention can be divided into a tip, a middle portion, and a tail connected in sequence. The middle portion of the MEMS probe based on the penetrating pine insulating layer provided by this invention has a penetrating pine insulating layer, while the tip and tail do not. There are no special limitations on the length of the tip, middle portion, and tail in this invention; they can be fabricated according to the application requirements.

[0013] The following are preferred technical solutions of the present invention, but are not intended to limit the technical solutions provided by the present invention. The purpose and beneficial effects of the present invention can be better achieved and realized through the following preferred technical solutions.

[0014] As a preferred embodiment of the present invention, the Parylene includes any one or a combination of at least two of Parylene-F, Parylene-N, Parylene-C, Parylene-D, or Parylene-HT types.

[0015] It should be noted that this invention does not impose any special restrictions on the weight-average molecular weight of phenelzine, and commercially available phenelzine commonly used in the field is applicable.

[0016] In this invention, Parylene represents Parylene.

[0017] As a preferred embodiment of the present invention, the coupling agent includes any one or a combination of at least two of γ-methacryloxypropyltrimethoxysilane (A-174), 3-aminopropyltriethoxysilane (APTES), 3-glycidyl ether propyltrimethoxysilane (GPTMS), or vinyltrimethoxysilane (VTMS).

[0018] As a preferred embodiment of the present invention, the ratio between the mass of the phenelzine and the volume of the coupling agent is 1g:(0.8-1.2)mL, for example, it can be 1g:0.8mL, 1g:0.9mL, 1g:1mL, 1g:1.1mL or 1g:1.2mL, etc.

[0019] This invention enables the fabrication of high-performance MEMS probes based on pyrelin insulating layers by controlling the ratio of pyrelin mass to coupling agent volume within a specific range. If the ratio is too high, i.e., excessive pyrelin dosage, the following consequences will occur: 1. Decreased adhesion of the deposited film; 2. Poor film surface uniformity; 3. Residue of unreacted pyrelin monomers or byproducts. If the ratio is too low, i.e., excessive coupling agent dosage, the following consequences will occur: 1. Reduced film density; 2. Introduction of impurities, thereby reducing the film's electrical insulation, thermal stability, etc.; 3. Reduced deposition efficiency.

[0020] In a second aspect, the present invention provides a method for fabricating a MEMS probe based on a Parylene insulating layer as described in the first aspect, the method comprising the following steps:

[0021] (1) Place the surface-activated MEMS probe in the CVD deposition chamber, place the phenelzine and coupling agent in the CVD equipment respectively, perform chemical vapor deposition, and set the phenelzine insulating layer on the surface of the MEMS probe.

[0022] (2) A photoresist layer is set in the middle part of the outer surface of the MEMS probe with a pyrene insulating layer on the surface, and exposure treatment is performed to develop and etch the tip and tail of the MEMS probe to remove the pyrene insulating layer on the outer surface of the tip and tail.

[0023] (3) Remove the remaining photoresist layer on the surface of the MEMS probe to obtain the MEMS probe based on the pyrene insulating layer.

[0024] As a preferred embodiment of the present invention, the temperature of the chemical vapor deposition is 40-800℃, for example, it can be 40℃, 80℃, 120℃, 150℃, 180℃, 200℃, 300℃, 400℃, 500℃, 600℃, 700℃ or 800℃, etc.

[0025] In this invention, solid pararelin powder is sublimated into a gaseous dimer in a quartz tank of a CVD device at 180°C, and then enters a pyrolysis chamber where it is pyrolyzed into an active monomer at a high temperature of 800°C. Finally, it is grown and polymerized on a substrate in a reaction chamber at a low temperature of 40°C to form an insulating film.

[0026] Preferably, the deposition chamber pressure in the CVD equipment is set to 10-15 mTorr, for example, it can be 10 mTorr, 10.5 mTorr, 11 mTorr, 11.5 mTorr, 12 mTorr, 12.5 mTorr, 13 mTorr, 13.5 mTorr, 14 mTorr, 14.5 mTorr or 15 mTorr, etc.

[0027] It should be noted that the chemical vapor deposition time depends on the required thickness of the pyrene insulating layer, and there are no special limitations in this invention.

[0028] Preferably, the deposition rate of the chemical vapor deposition is 0.4-0.6 μm / h, for example, it can be 0.4 μm / h, 0.42 μm / h, 0.44 μm / h, 0.46 μm / h, 0.48 μm / h, 0.5 μm / h, 0.52 μm / h, 0.54 μm / h, 0.56 μm / h, 0.58 μm / h or 0.6 μm / h, etc.

[0029] Preferably, the temperature is lowered to room temperature after the chemical vapor deposition is completed.

[0030] As a preferred embodiment of the present invention, the etching method includes low-temperature ICP (semiconductor etching process technology) etching.

[0031] Preferably, the gas used in the low-temperature ICP etching includes oxygen and / or carbon tetrafluoride.

[0032] Preferably, the gas flow rate used for the low-temperature ICP etching is 20-50 sccm, for example, it can be 20 sccm, 25 sccm, 30 sccm, 35 sccm, 40 sccm, 45 sccm or 50 sccm, etc.

[0033] For example, if the gas used for low-temperature ICP etching is oxygen, the oxygen flow rate can be 20-30 sccm (e.g., 20 sccm, 22 sccm, 24 sccm, 26 sccm, 28 sccm or 30 sccm, etc.); if the gas used for low-temperature ICP etching is a mixture of carbon tetrafluoride (CF4) and oxygen, the gas flow rate can be 20-30 sccm (e.g., 20 sccm, 25 sccm, 30 sccm, 35 sccm, 40 sccm, 45 sccm or 50 sccm, etc.).

[0034] Preferably, the radio frequency power of the low-temperature ICP etching is 300-500W (e.g., 300W, 320W, 340W, 360W, 380W, 400W, 420W, 440W, 460W, 480W, or 500W, etc.), and the radio frequency bias power is 50-200W (e.g., 50W, 70W, 100W, 120W, 140W, 160W, 180W, or 200W, etc.).

[0035] Preferably, the reaction chamber pressure of the low-temperature ICP etching is 1-10 Pa, for example, it can be 1 Pa, 2 Pa, 3 Pa, 4 Pa, 5 Pa, 6 Pa, 7 Pa, 8 Pa, 9 Pa or 10 Pa.

[0036] Preferably, the low-temperature ICP etching time is 5-10 min, for example, it can be 5 min, 6 min, 7 min, 8 min, 9 min or 10 min.

[0037] As a preferred embodiment of the present invention, the surface-activated MEMS probe is prepared by the following method, which includes the following steps:

[0038] The MEMS probe is placed in a plasma descaling machine for cleaning to activate its surface, thus obtaining the surface-activated MEMS probe.

[0039] Preferably, the power of the plasma degumming machine is set to 280-320W (e.g., 280W, 290W, 300W, 310W or 320W, etc.), and the processing time is 2-5min (e.g., 2min, 3min, 4min or 5min, etc.).

[0040] As a preferred embodiment of the present invention, after removing the remaining photoresist layer on the surface of the MEMS probe, a post-processing step is further included, wherein the post-processing method includes cleaning and inspection.

[0041] Preferably, the solvent used for cleaning includes deionized water and / or anhydrous ethanol.

[0042] In this invention, the surface of the MEMS probe is cleaned to ensure that there is no dirt or residual adhesive. The probe tip and tail are then observed under a microscope to see if the phenelzine insulating layer has been completely etched. Once confirmed to be correct, the fabrication of the MEMS probe based on the phenelzine insulating layer is completed.

[0043] As a preferred embodiment of the present invention, the method for fabricating the MEMS probe based on the Parylene insulating layer specifically includes the following steps:

[0044] (1) The MEMS probe is placed in a plasma desizing machine for cleaning and surface activation to obtain the surface-activated MEMS probe; wherein the power of the plasma desizing machine is set to 280-320W and the processing time is 2-5min.

[0045] A surface-activated MEMS probe is placed in a CVD deposition chamber. Perylene and a coupling agent are placed in the CVD equipment for chemical vapor deposition. A perylene insulating layer is deposited on the surface of the MEMS probe. The pressure in the deposition chamber of the CVD equipment is set to 10-15 mTorr, and the deposition rate of the chemical vapor deposition is 0.4-0.6 μm / h.

[0046] (2) A photoresist layer is set in the middle part of the outer surface of the MEMS probe with a Pyrelin insulating layer on the surface, and exposure treatment is performed. The tip and tail of the MEMS probe are developed and low-temperature ICP etched to remove the Pyrelin insulating layer on the outer surface of the tip and tail.

[0047] The gases used in the low-temperature ICP etching include oxygen and / or carbon tetrafluoride, with a gas flow rate of 20-50 sccm; RF power of 300-500 W; RF bias power of 50-200 W; reaction chamber pressure of 1-10 Pa; and etching time of 5-10 min.

[0048] (3) After removing the remaining photoresist layer on the surface of the MEMS probe, clean and inspect it to obtain the MEMS probe based on the pyrene insulating layer.

[0049] Compared with the prior art, the present invention has the following beneficial effects:

[0050] This invention prepares a MEMS probe based on a phenelin insulating layer by setting a phenelin insulating layer in the middle part of the MEMS probe. The MEMS probe based on the phenelin insulating layer has excellent performance and the preparation method is simple. Detailed Implementation

[0051] To facilitate understanding of the present invention, the following embodiments are provided. Those skilled in the art should understand that these embodiments are merely illustrative and should not be construed as limiting the scope of the invention.

[0052] The sources of some components in the examples and comparative examples are shown in Table 1 below:

[0053] Table 1

[0054]

[0055]

[0056] Example 1

[0057] This embodiment provides a MEMS probe based on a phenelin insulating layer and its fabrication method. The phenelin-based MEMS probe includes a MEMS probe and a phenelin insulating layer covering the middle part of the MEMS probe.

[0058] The raw materials for preparing the Parylene insulation layer include Parylene-F type and coupling agent A-174, and the ratio between the mass of Parylene-F type and the volume of coupling agent A-174 is 1g:1mL.

[0059] The above-mentioned method for fabricating MEMS probes based on Parylene insulating layers specifically includes the following steps:

[0060] (1) The MEMS probe is placed in a plasma desmearing machine for cleaning and surface activation to obtain the surface-activated MEMS probe; wherein the power of the plasma desmearing machine is set to 300W and the processing time is 3min.

[0061] A surface-activated MEMS probe was placed in a CVD deposition chamber. Parylene-F and coupling agent A-174 were placed in the CVD equipment for chemical vapor deposition. A Parylene insulating layer was deposited on the surface of the MEMS probe. The deposition chamber pressure in the CVD equipment was set to 12 mTorr, the chemical vapor deposition rate was 0.6 μm / h, the deposition time was 4h, and the thickness of the Parylene insulating layer was approximately 2.4 μm.

[0062] (2) Place the MEMS probe with a pyrene insulating layer on a clean substrate, spin-coat JSR photoresist (coating thickness of 30μm), pre-bake at 110℃ for 15min, and then perform photolithography to expose the areas that do not need insulation (the tip and tail of the MEMS probe). Complete the photoresist application in the middle part of the MEMS probe with the pyrene insulating layer on the surface, expose it, and then develop and perform low-temperature ICP etching on the tip and tail of the MEMS probe to remove the pyrene insulating layer on the outer surface of the tip and tail.

[0063] The gas used for the low-temperature ICP etching is oxygen, with a gas flow rate of 25 sccm; the RF power is 400W, the RF bias power is 100W; the reaction chamber pressure is 5Pa, and the etching time is 7min.

[0064] (3) After removing the remaining photoresist layer on the surface of the MEMS probe, clean and inspect it to obtain the MEMS probe based on the pyrene insulating layer.

[0065] Example 2

[0066] This embodiment provides a MEMS probe based on a phenelin insulating layer and its fabrication method. The phenelin-based MEMS probe includes a MEMS probe and a phenelin insulating layer covering the middle part of the MEMS probe.

[0067] The raw materials for preparing the Parylene insulation layer include Parylene-N type and coupling agent APTES, and the ratio between the mass of Parylene-N type and the volume of coupling agent APTES is 1g:0.9mL.

[0068] The above-mentioned method for fabricating MEMS probes based on Parylene insulating layers specifically includes the following steps:

[0069] (1) The MEMS probe is placed in a plasma desizing machine for cleaning and surface activation to obtain the surface-activated MEMS probe; wherein the power of the plasma desizing machine is set to 280W and the processing time is 5min.

[0070] A surface-activated MEMS probe was placed in a CVD deposition chamber. Parylene-N type and coupling agent APTES were placed in the CVD equipment for chemical vapor deposition. A Parylene insulating layer was deposited on the surface of the MEMS probe. The deposition chamber pressure in the CVD equipment was set to 15 mTorr, the chemical vapor deposition rate was 0.4 μm / h, the deposition time was 6 h, and the thickness of the Parylene insulating layer was approximately 2.4 μm.

[0071] (2) Place the MEMS probe with a pyrene insulating layer on a clean substrate, spin-coat JSR photoresist (coating thickness of 30μm), pre-bake at 110℃ for 15min, and then perform photolithography to expose the areas that do not need insulation (the tip and tail of the MEMS probe). Complete the photoresist application in the middle part of the MEMS probe with the pyrene insulating layer on the surface, expose it, and then develop and perform low-temperature ICP etching on the tip and tail of the MEMS probe to remove the pyrene insulating layer on the outer surface of the tip and tail.

[0072] The gas used for the low-temperature ICP etching is oxygen, with a gas flow rate of 20 sccm; the RF power is 300W, the RF bias power is 200W; the reaction chamber pressure is 8Pa, and the etching time is 8min.

[0073] (3) After removing the remaining photoresist layer on the surface of the MEMS probe, clean and inspect it to obtain the MEMS probe based on the pyrene insulating layer.

[0074] Example 3

[0075] This embodiment provides a MEMS probe based on a phenelin insulating layer and its fabrication method. The phenelin-based MEMS probe includes a MEMS probe and a phenelin insulating layer covering the middle part of the MEMS probe.

[0076] The raw materials for preparing the Parylene insulation layer include Parylene-D type and coupling agent GPTMS, and the ratio between the mass of Parylene-D type and the volume of coupling agent GPTMS is 1g:1.1mL.

[0077] The above-mentioned method for fabricating MEMS probes based on Parylene insulating layers specifically includes the following steps:

[0078] (1) The MEMS probe is placed in a plasma desmearing machine for cleaning and surface activation to obtain the surface-activated MEMS probe; wherein the power of the plasma desmearing machine is set to 320W and the processing time is 3min.

[0079] A surface-activated MEMS probe was placed in a CVD deposition chamber. Parylene-D and the coupling agent GPTMS were placed in the CVD equipment for chemical vapor deposition. A Parylene insulating layer was deposited on the surface of the MEMS probe. The deposition chamber pressure in the CVD equipment was set to 13 mTorr, the chemical vapor deposition rate was 0.5 μm / h, the deposition time was 5 h, and the thickness of the Parylene insulating layer was approximately 2.5 μm.

[0080] (2) Place the MEMS probe with a pyrene insulating layer on a clean substrate, spin-coat JSR photoresist (coating thickness of 30μm), pre-bake at 110℃ for 15min, and then perform photolithography to expose the areas that do not need insulation (the tip and tail of the MEMS probe). Complete the photoresist application in the middle part of the MEMS probe with the pyrene insulating layer on the surface, expose it, and then develop and perform low-temperature ICP etching on the tip and tail of the MEMS probe to remove the pyrene insulating layer on the outer surface of the tip and tail.

[0081] The gas used in the low-temperature ICP etching includes oxygen, with a gas flow rate of 30 sccm; the radio frequency power is 500W, the radio frequency bias power is 120W; the reaction chamber pressure is 6Pa, and the etching time is 7min.

[0082] (3) After removing the remaining photoresist layer on the surface of the MEMS probe, clean and inspect it to obtain the MEMS probe based on the pyrene insulating layer.

[0083] Example 4

[0084] This embodiment provides a MEMS probe based on a pyrene insulating layer and its fabrication method, which differs from Embodiment 1 only in that:

[0085] The ratio between the mass of Parylene-F and the volume of coupling agent A-174 is 1 g: 0.8 mL;

[0086] Other conditions are the same as in Example 1.

[0087] Example 5

[0088] This embodiment provides a MEMS probe based on a pyrene insulating layer and its fabrication method, which differs from Embodiment 1 only in that:

[0089] The ratio between the mass of Parylene-F and the volume of coupling agent A-174 is 1 g: 1.2 mL;

[0090] Other conditions are the same as in Example 1.

[0091] Example 6

[0092] This embodiment provides a MEMS probe based on a pyrene insulating layer and its fabrication method, which differs from Embodiment 1 only in that:

[0093] The ratio between the mass of Parylene-F and the volume of coupling agent A-174 is 1 g: 0.6 mL;

[0094] Other conditions are the same as in Example 1.

[0095] Example 7

[0096] This embodiment provides a MEMS probe based on a pyrene insulating layer and its fabrication method, which differs from Embodiment 1 only in that:

[0097] The ratio between the mass of Parylene-F and the volume of coupling agent A-174 is 1 g: 1.5 mL;

[0098] Other conditions are the same as in Example 1.

[0099] Comparative Example 1

[0100] This comparative example provides a MEMS probe based on a pyrene insulating layer and its fabrication method, which differs from Example 1 only in that:

[0101] The method for fabricating the MEMS probe based on the Parylene insulating layer specifically includes the following steps:

[0102] (1) The MEMS probe is placed in a plasma desmearing machine for cleaning and surface activation to obtain the surface-activated MEMS probe; wherein the power of the plasma desmearing machine is set to 280-320W and the processing time is 2-5min.

[0103] A surface-activated MEMS probe was placed in a CVD deposition chamber. Parylene-F type and coupling agent A-174 were placed in the CVD equipment for chemical vapor deposition. A Parylene insulating layer was deposited on the surface of the MEMS probe. The deposition chamber pressure in the CVD equipment was set to 12 mTorr, the chemical vapor deposition rate was 0.6 μm / h, the deposition time was 4h, and the thickness of the Parylene insulating layer was approximately 2.4 μm.

[0104] (2) The pyrene insulating layer on the surface of the MEMS probe tip and tail is removed by laser (450nm blue laser), and then cleaned and inspected to obtain the MEMS probe based on the pyrene insulating layer.

[0105] Comparative Example 2

[0106] This comparative example provides a MEMS probe and its preparation method, which differs from Example 1 only in that;

[0107] The raw material for preparing the Parylene insulating layer is Parylene-F type;

[0108] Other conditions are the same as in Example 1.

[0109] The MEMS probe surface provided in this comparative example failed to form a complete paraffin insulating layer.

[0110] The performance of the MEMS probes based on the pyrene insulating layer provided in the above embodiments and comparative examples was tested, and the specific test methods are as follows:

[0111] 1. Film deviation of Piriton insulating layer: The thickness values ​​of 18 points on the sample to be tested are taken using an ellipsometry. The deviation of the thickness of these 18 points from the target thickness is calculated to calculate the uniformity deviation of the film thickness. The average value is taken as the film deviation of Piriton insulating layer.

[0112] Wherein, the uniformity deviation of film thickness = (thickness value obtained by ellipsometer test - target thickness) ÷ target thickness × 100%.

[0113] 2. Appearance of the pyrene insulating layer: The appearance of the pyrene insulating layer in the middle part of the MEMS probe based on the pyrene insulating layer was observed and recorded using an electron microscope.

[0114] 3. Insulation performance of MEMS probes based on paraffin insulating layer: The test process involves passing a current of 100mA to 400mA through two MEMS probes covered with insulating layers and applying a pressure of 100OD. During the energizing process, the insulating parts of the two probes are brought into contact, and the current and the elasticity of the probes are observed during the contact process to determine the quality of the insulation performance.

[0115] The test performance is shown in Table 2 below:

[0116] Table 2

[0117]

[0118]

[0119] As described above, this invention fabricates a MEMS probe based on a penetrating insulating layer by setting a penetrating insulating layer in the middle of the MEMS probe. This penetrating insulating layer-based MEMS probe exhibits excellent performance and is simple to fabricate. The penetrating insulating film on the surface of the penetrating insulating layer-based MEMS probe is continuous and intact, with a film thickness deviation of <±23.5%, and the penetrating insulating layer-based MEMS probe has good insulation properties.

[0120] As can be seen from Examples 1 and 4-7, the present invention further improves the overall performance of MEMS probes based on the pyrene insulating layer by controlling the ratio between the mass of pyrene and the volume of the coupling agent within a specific range.

[0121] As can be seen from Example 1 and Comparative Examples 1-2, the present invention has prepared a high-performance MEMS probe based on a phenelin insulating layer by designing the raw materials and preparation method for the preparation of the MEMS probe based on the phenelin insulating layer.

[0122] In summary, this invention provides a MEMS probe based on a phenelin insulating layer by setting a phenelin insulating layer in the middle of the MEMS probe. This MEMS probe based on a phenelin insulating layer has excellent performance and the fabrication method is simple.

[0123] The applicant declares that the detailed process flow of this invention is illustrated by the above embodiments, but this invention is not limited to the above detailed process flow, that is, it does not mean that this invention must rely on the above detailed process flow to be implemented. Those skilled in the art should understand that any improvements to this invention, equivalent substitutions of raw materials for the product of this invention, addition of auxiliary components, and selection of specific methods, etc., all fall within the protection scope and disclosure scope of this invention.

Claims

1. A MEMS probe based on a parelin insulating layer, characterized in that, The paraffin-based MEMS probe includes a MEMS probe and a paraffin insulating layer covering the middle part of the MEMS probe. The raw materials for preparing the pyrene insulating layer include pyrene and a coupling agent; The ratio between the mass of the phenelzine and the volume of the coupling agent is 1 g : (0.9-1.1) mL; The MEMS probe based on the Parylene insulating layer is prepared by the following method, which includes the following steps: (1) Place the surface-activated MEMS probe in the CVD deposition chamber, place the phenelzine and coupling agent in the CVD equipment respectively, perform chemical vapor deposition, and set the phenelzine insulating layer on the surface of the MEMS probe. (2) A photoresist layer is set in the middle part of the outer surface of the MEMS probe with a pyrene insulating layer on the surface, and exposure treatment is performed to develop and etch the tip and tail of the MEMS probe to remove the pyrene insulating layer on the outer surface of the tip and tail. (3) Remove the remaining photoresist layer on the surface of the MEMS probe to obtain the MEMS probe based on the pyrene insulating layer; The etching method is low-temperature ICP etching.

2. The MEMS probe based on a parelin insulating layer according to claim 1, characterized in that, The parylene includes any one or a combination of at least two of the following types: Parylene-F, Parylene-N, Parylene-C, Parylene-D, or Parylene-HT.

3. The MEMS probe based on a parelin insulating layer according to claim 1 or 2, characterized in that, The coupling agent includes any one or a combination of at least two of γ-methacryloxypropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-glycidyl ether propyltrimethoxysilane, or vinyltrimethoxysilane.

4. A method for fabricating a MEMS probe based on a pyrene insulating layer as described in any one of claims 1-3, characterized in that, The preparation method includes the following steps: (1) Place the surface-activated MEMS probe in the CVD deposition chamber, place the phenelzine and coupling agent in the CVD equipment respectively, perform chemical vapor deposition, and set the phenelzine insulating layer on the surface of the MEMS probe. (2) A photoresist layer is set in the middle part of the outer surface of the MEMS probe with a pyrene insulating layer on the surface, and exposure treatment is performed to develop and etch the tip and tail of the MEMS probe to remove the pyrene insulating layer on the outer surface of the tip and tail. (3) Remove the remaining photoresist layer on the surface of the MEMS probe to obtain the MEMS probe based on the pyrene insulating layer.

5. The preparation method according to claim 4, characterized in that, The temperature for chemical vapor deposition is 40-800℃.

6. The preparation method according to claim 4, characterized in that, The pressure in the deposition chamber of the CVD equipment is set to 10-15 mTorr.

7. The preparation method according to claim 4, characterized in that, The deposition rate of the chemical vapor deposition is 0.4-0.6 μm / h.

8. The preparation method according to claim 4, characterized in that, The gases used in the low-temperature ICP etching include oxygen and / or carbon tetrafluoride.

9. The preparation method according to claim 4, characterized in that, The gas flow rate used for the low-temperature ICP etching is 20-50 sccm.

10. The preparation method according to claim 4, characterized in that, The radio frequency power of the low-temperature ICP etching is 300-500 W, and the radio frequency bias power is 50-200 W.

11. The preparation method according to claim 4, characterized in that, The reaction chamber pressure for the low-temperature ICP etching is 1-10 Pa.

12. The preparation method according to claim 4, characterized in that, The low-temperature ICP etching time is 5-10 minutes.

13. The preparation method according to claim 4, characterized in that, The surface-activated MEMS probe is prepared by the following method, which includes the following steps: The MEMS probe is placed in a plasma descaling machine for cleaning to activate its surface, thus obtaining the surface-activated MEMS probe.

14. The preparation method according to claim 4, characterized in that, After removing the remaining photoresist layer on the surface of the MEMS probe, a post-processing step is also included, which includes cleaning and inspection.

15. The preparation method according to claim 4, characterized in that, The method for fabricating the MEMS probe based on the Parylene insulating layer specifically includes the following steps: (1) The MEMS probe is placed in a plasma desizing machine for cleaning to activate its surface and obtain the surface-activated MEMS probe; wherein the power of the plasma desizing machine is set to 280-320 W and the processing time is 2-5 min. A surface-activated MEMS probe is placed in a CVD deposition chamber. Perylene and a coupling agent are placed in the CVD equipment for chemical vapor deposition. A perylene insulating layer is deposited on the surface of the MEMS probe. The pressure in the deposition chamber of the CVD equipment is set to 10-15 mTorr, and the deposition rate of the chemical vapor deposition is 0.4-0.6 μm / h. (2) A photoresist layer is set in the middle part of the outer surface of the MEMS probe with a pyrene insulating layer on the surface, and exposure treatment is performed. The tip and tail of the MEMS probe are developed and low-temperature ICP etched to remove the pyrene insulating layer on the outer surface of the tip and tail. The gases used in the low-temperature ICP etching include oxygen and / or carbon tetrafluoride, with a gas flow rate of 20-50 sccm; RF power of 300-500 W; RF bias power of 50-200 W; reaction chamber pressure of 1-10 Pa; and etching time of 5-10 min. (3) After removing the remaining photoresist layer on the surface of the MEMS probe, clean and inspect it to obtain the MEMS probe based on the pyrene insulating layer.

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