一种集成电阻激光器
By designing a P-plane electrode layer structure that combines the non-connected contact area and the resistance area of the integrated resistive laser, the problems of packaging complexity and heat dissipation were solved, thereby improving the performance and reliability of the laser and extending its service life.
CN120879325BActive Publication Date: 2026-07-17GUANGXI HUXIN TECH CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GUANGXI HUXIN TECH CO LTD
- Filing Date
- 2025-06-27
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing semiconductor lasers have complex packaging, are difficult to dissipate heat, and are prone to optical catastrophic damage due to thermal runaway.
Method used
Design an integrated resistive laser that employs a P-plane electrode layer structure combining non-connected contact and resistive regions. The resistive regions provide current during packaging, and the flip-chip process is used for packaging to improve heat dissipation performance.
Benefits of technology
It reduces packaging complexity, improves the heat dissipation performance and resistance to optical catastrophic damage of the laser, and extends the lifespan of the laser.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN120879325B_ABST
Abstract
本发明涉及激光器技术领域，公开一种集成电阻激光器，自下而上依次为N面电极层、器件结构层、接触层、第一绝缘层、P面电极层，所述器件结构层包括N型半导体层、量子阱层和P型半导体层；所述接触层包括第一接触区和第二接触区，所述第一接触区和第二接触区不连通。该集成电阻激光器，通过将激光器脊型上的接触层制备成不相接触的第一接触区和第二接触区，并且将P面电极层制备成第一电极层区、第二电极层区和电阻区组合的形式，由于电阻区存在电阻，在封装过程中，只需要对P面的第一电极层区进行金线打线即可，外部一个电压也能实现两个电流的提供方式，不需要与其它的独立元件一起封装，封装复杂性低。
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