紫外光电探测器、制备方法及在可编程逻辑门中的应用
By using a P-type GaN layer and an inorganic N-type aluminum quantum dot layer to form a PN junction in an ultraviolet photodetector, and combining it with a light-bearing graphene layer, the problem of insufficient multi-state logic operation capability in existing ultraviolet photodetectors is solved, achieving efficient ultraviolet photogenerated carrier separation and logic output, which is suitable for high-performance optoelectronic logic systems.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZHEJIANG UNIV
- Filing Date
- 2025-07-16
- Publication Date
- 2026-07-17
AI Technical Summary
Existing ultraviolet photodetectors have limited ability to perform multi-state logic operations on a single device and lack effective schemes for controlling the transmission direction of photogenerated carriers, making it difficult to achieve complex logic functions and efficient optical communication.
An ultraviolet-band optical response unit is adopted, which includes a P-type GaN layer and an inorganic N-type aluminum quantum dot layer to form a PN junction, combined with a light-bearing graphene layer as a charge transport layer. Multi-state logic output is achieved by controlling the polarity of the photogenerated current, and it is applied in programmable logic gates.
It achieves efficient separation and transport of photogenerated carriers in the ultraviolet band, improves the detector's response performance and logic operation capabilities, reduces device fabrication costs, and is suitable for high-response, high-speed optoelectronic logic systems.
Smart Images
Figure CN120882111B_ABST