Lower electrode assembly and semiconductor process chamber

Abstract

The application discloses a lower electrode assembly and a semiconductor process chamber, the disclosed lower electrode assembly comprises an interface disc, a support structure and a bearing disc, wherein the bearing disc is located above the interface disc, the interface disc is used for receiving a radio frequency signal, the center of the interface disc has a through hole; the support structure comprises a first metal cylinder and a second metal cylinder, the first port of the first metal cylinder is connected with the bearing disc and supports the bearing disc, the second port of the first metal cylinder extends to the lower side of the interface disc through the through hole, the second metal cylinder is sleeved outside the first metal cylinder and forms a first heat insulation gap with the first metal cylinder, the first port of the second metal cylinder is connected with the second port of the first metal cylinder, and the second port of the second metal cylinder is connected with the interface disc, so that the radio frequency signal received by the interface disc is transmitted to the bearing disc in sequence through the second metal cylinder and the first metal cylinder. The above scheme can solve the problem of high temperature and failure of the radio frequency matching device in the related art.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more particularly to a lower electrode assembly and a semiconductor process chamber. Background Technology

[0002] The semiconductor process chamber is equipped with a lower electrode assembly. The lower electrode assembly has a carrier disk that carries the wafer and a metal guide rod that transmits the radio frequency signal output by the radio frequency matching device to the carrier disk. The radio frequency signal output by the radio frequency matching device is transmitted to the carrier disk through the metal guide rod for related processes (such as thin film deposition process, etching process, etc.).

[0003] During RF signal transmission, the metal conductor also transfers heat from the carrier pad to the RF matching unit. With advancements in manufacturing processes, the required temperature of the carrier pad is increasing (e.g., in thin film deposition, the wafer carrier pad needs to be heated to between 300°C and 400°C). However, due to the shorter length of the metal conductor, the carrier pad temperature is further increased, leading to increased heat transfer to the RF matching unit via the metal conductor. This can cause the RF matching unit to fail due to overheating. Summary of the Invention

[0004] This invention discloses a lower electrode assembly and a semiconductor process chamber to solve the problem of RF matching devices failing due to excessive temperature in related technologies.

[0005] To solve the above-mentioned technical problems, the present invention is implemented as follows: In a first aspect, this application discloses a lower electrode assembly for use in a semiconductor process chamber, the lower electrode assembly comprising an interface disk, a support structure, and a carrier disk, wherein... The carrier disk is located above the interface disk, and the interface disk is used to receive radio frequency signals. The interface disk has a through hole in the center. The support structure includes a first metal cylinder and a second metal cylinder. The first port of the first metal cylinder is connected to the carrier plate and supports the carrier plate. The second port of the first metal cylinder extends through the through hole to the bottom of the interface plate. The second metal cylinder is sleeved on the outside of the first metal cylinder and forms a first heat insulation gap with the first metal cylinder. The first port of the second metal cylinder is connected to the second port of the first metal cylinder, and the second port of the second metal cylinder is connected to the interface plate, so that the radio frequency signal received by the interface plate is transmitted to the carrier plate in sequence through the second metal cylinder and the first metal cylinder.

[0006] Secondly, this application also discloses a semiconductor process chamber, the disclosed semiconductor process chamber including a chamber body and the lower electrode assembly described in the first aspect; Both the interface plate and the carrier plate are located within the chamber body. The bottom wall of the chamber body has an opening, and the support structure passes through the opening to support the carrier plate.

[0007] The technical solution adopted in this invention can achieve the following technical effects: In this embodiment, the lower electrode assembly is configured to include an interface disk, a support structure, and a carrier disk. The support structure is configured to include a first metal cylinder and a second metal cylinder. The first port of the first metal cylinder is connected to the carrier disk and supports the carrier disk. The second port of the first metal cylinder extends through a through hole to the bottom of the interface disk. The second metal cylinder is sleeved on the outside of the first metal cylinder and forms a first heat insulation gap with the first metal cylinder. The first port of the second metal cylinder is connected to the second port of the first metal cylinder, and the second port of the second metal cylinder is connected to the interface disk. This allows the carrier disk to be fixed to the interface disk through the second metal cylinder and the first metal cylinder, and the radio frequency signal received by the interface disk is transmitted to the carrier disk sequentially through the second metal cylinder and the first metal cylinder. Because the RF matching unit is connected to the carrier plate sequentially through the interface plate, the second metal cylinder, and the first metal cylinder, the heat transfer path between the carrier plate and the RF matching unit is extended. This allows more heat to be dissipated during the heat transfer from the carrier plate to the RF matching unit, thereby reducing the amount of heat transferred to the RF matching unit. Furthermore, the second metal cylinder is fitted outside the first metal cylinder, forming a first thermal insulation gap. The thermal insulation effect of the first thermal insulation gap reduces the heat radiated from the first metal cylinder to the second metal cylinder, thus alleviating the problem of the RF matching unit overheating and subsequently preventing it from failing due to overheating. Attached Figure Description

[0008] Figure 1 This is a schematic diagram of the structure of the first semiconductor process chamber disclosed in an embodiment of the present invention; Figures 2 to 4 This is a partial schematic diagram of the first semiconductor process chamber disclosed in an embodiment of the present invention, wherein, Figure 4 The arrows in the image indicate the heat transfer path from the carrier plate to the RF matching unit via thermal conduction. Figure 5 This is a schematic diagram of the structure of a second semiconductor process chamber disclosed in an embodiment of the present invention; Figure 6 This is a schematic diagram of the structure of the third semiconductor process chamber disclosed in the embodiments of the present invention; Figure 7 This is a diagram showing the transmission path of radio frequency (RF) signals in a semiconductor process chamber according to an embodiment of the present invention. Solid arrows indicate the feed path of RF signals transmitted from the RF matching unit to the carrier disk, while hollow arrows (including solid hollow arrows and dashed hollow arrows) indicate the return path of the RF signals.

[0009] Explanation of reference numerals in the attached figures: 100 - Chamber body, 110 - RF matching unit, 120 - Shielding cover 210-Interface plate, 201-Through hole, 202-First annular recessed section, 203-Second annular recessed section, 211-Cooling channel, 220-Support structure, 221-First metal cylinder, 221a-Bending section, 221b-First bottom wall, 222-Second metal cylinder, 222a-Flanged edge, 222b-Second bottom wall, 223-First heat insulation gap, 224-Second heat insulation gap, 230-Bearing plate, 231-Heating wire, 232-First gap, 233-Second gap, 240-Heat insulation pad, 250-Third metal cylinder, 251-Third bottom wall 260 - First conductive washer, 270 - First sealing ring, 310 - RF feed unit, 320 - First insulating ring, 330 - Second insulating ring, 340 - Third insulating ring 350 - Second sealing ring, 360 - Third sealing ring, 370 - Fourth sealing ring, 380 - Second conductive gasket. Detailed Implementation

[0010] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0011] The technical solutions disclosed in the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0012] Please refer to Figures 1 to 7 This invention discloses a lower electrode assembly for use in a semiconductor process chamber. The lower electrode assembly includes an interface disk 210, a support structure 220, and a carrier disk 230.

[0013] Interface panel 210 is a basic component of the lower electrode assembly, used to provide a mounting base for at least some other components of the lower electrode assembly, and to cooperate with the chamber body 100 of the semiconductor process chamber to enable the mounting of the lower electrode assembly.

[0014] The carrier disk 230 is used to support the wafer. The carrier disk 230 can have functions such as adsorbing and heating the wafer supported on it. A heating wire 231 can be provided inside the carrier disk 230, which can heat the carrier disk 230, and thus heat the wafer supported on the carrier disk 230.

[0015] The carrier disk 230 is located above the interface disk 210, which is used to receive radio frequency signals. The interface disk 210 has a through hole 201 in its center. The carrier disk 230 and the interface disk 210 can be arranged at intervals.

[0016] The support structure 220 includes a first metal cylinder 221 and a second metal cylinder 222. The first port of the first metal cylinder 221 is connected to and supports the carrier plate 230. The second port of the first metal cylinder 221 extends through the through hole 201 to the bottom of the interface plate 210.

[0017] The second metal cylinder 222 is sleeved on the outside of the first metal cylinder 221, forming a first heat insulation gap 223 with the first metal cylinder 221. The first port of the second metal cylinder 222 is connected to the second port of the first metal cylinder 221, and the second port of the second metal cylinder 222 is connected to the interface disk 210, so that the radio frequency signal received by the interface disk 210 is transmitted to the carrier disk 230 in sequence through the second metal cylinder 222 and the first metal cylinder 221. The radio frequency signal received by the interface disk 210 can be applied through the radio frequency matching unit 110.

[0018] It should be noted that, since the second port of the second metal cylinder 222 is connected to the interface disk 210, the first port of the second metal cylinder 222 is connected to the second port of the first metal cylinder 221, and the first port of the first metal cylinder 221 is connected to the carrier disk 230, the carrier disk 230 is essentially fixed to the interface disk 210 through the second metal cylinder 222 and the first metal cylinder 221.

[0019] Specifically, the radio frequency signal received by the interface disk 210 reaches the second port of the second metal cylinder 222 through the interface disk 210, and is transmitted to the carrier disk 230 in sequence through the first port of the second metal cylinder 222, the second port of the first metal cylinder 221, and the first port of the first metal cylinder 221, thereby enabling the semiconductor process chamber to perform related processes (such as thin film deposition process, etching process, etc.).

[0020] In this embodiment, the lower electrode assembly is configured to include an interface disk 210, a support structure 220, and a carrier disk 230. The support structure 220 is configured to include a first metal cylinder 221 and a second metal cylinder 222. The first port of the first metal cylinder 221 is connected to the carrier disk 230 and supports the carrier disk 230. The second port of the first metal cylinder 221 extends through the through hole 201 to the bottom of the interface disk 210. The second metal cylinder 222 is sleeved on the outside of the first metal cylinder 221 and forms a first heat insulation gap 223 with the first metal cylinder 221. The first port of the second metal cylinder 222 is connected to the second port of the first metal cylinder 221 and the second port of the second metal cylinder 222 is connected to the interface disk 210. This allows the carrier disk 230 to be fixed to the interface disk 210 through the second metal cylinder 222 and the first metal cylinder 221. The radio frequency signal received by the interface disk 210 is transmitted to the carrier disk 230 sequentially through the second metal cylinder 222 and the first metal cylinder 221. Since the RF matching unit 110 is connected to the carrier plate 230 in sequence through the interface plate 210, the second metal cylinder 222 and the first metal cylinder 221, the heat transfer path between the carrier plate 230 and the RF matching unit 110 is extended. This allows more heat to be dissipated during the heat transfer from the carrier plate 230 to the RF matching unit 110, thereby reducing the amount of heat transferred to the RF matching unit 110. Furthermore, the second metal cylinder 222 is sleeved on the outside of the first metal cylinder 221 and forms a first heat insulation gap 223 with the first metal cylinder 221. The heat insulation effect of the first heat insulation gap 223 reduces the heat radiated from the first metal cylinder 221 to the second metal cylinder 222, thereby alleviating the problem of the RF matching unit 110 overheating and thus mitigating the problem of the RF matching unit 110 failing due to overheating.

[0021] Moreover, by adopting the design of the second metal cylinder 222 being sleeved on the outside of the first metal cylinder 221, the lower electrode assembly can have a longer heat transfer path in a limited space. This extends the heat transfer path between the carrier plate 230 and the radio frequency matching unit 110 while keeping the space occupied by the lower electrode assembly small.

[0022] Specifically, the RF matching unit 110 can be directly connected to the interface board 210, and the RF matching unit 110 can directly transmit RF signals to the interface board 210.

[0023] In another embodiment, in order to further alleviate the problem of excessive temperature of the RF matching unit 110, the lower electrode assembly may also include a third metal cylinder 250. The third metal cylinder 250 may be sleeved outside the second metal cylinder 222 and may form a second heat insulation gap 224 between the third metal cylinder 250 and the second metal cylinder 222. The first port of the third metal cylinder 250 may be connected to the interface disk 210, and the second port of the third metal cylinder 250 may be used to receive RF signals.

[0024] The lower electrode assembly disclosed in this application includes a third metal cylinder 250, which is fitted outside the second metal cylinder 222. The first port of the third metal cylinder 250 is connected to the interface disk 210, and the second port of the third metal cylinder 250 receives radio frequency signals. This allows the radio frequency matching device 110 to be connected to the carrier disk 230 in sequence through the third metal cylinder 250, the interface disk 210, the second metal cylinder 222, and the first metal cylinder 221. This further increases the heat transfer path between the carrier disk 230 and the radio frequency matching device 110. Moreover, the second heat insulation gap 224 formed between the third metal cylinder 250 and the second metal cylinder 222 can reduce the heat radiated from the second metal cylinder 222 to the third metal cylinder 250, thereby further alleviating the problem of the radio frequency matching device 110 overheating and thus mitigating the problem of the radio frequency matching device 110 failing due to overheating. Moreover, the third metal cylinder 250 is sleeved on the outside of the second metal cylinder 222, which extends the heat transfer path between the carrier plate 230 and the radio frequency matching unit 110 while keeping the space occupied by the lower electrode assembly small.

[0025] Optionally, the lower electrode assembly may further include an RF feeder 310, and the second port of the third metal cylinder 250 may be electrically connected to the RF feeder 310. The RF feeder 310 may be used to connect to the RF matching unit 110. The RF feeder 310 may be a metal rod or a metal wire, etc. The embodiments of this application do not impose specific limitations on the structure of the RF feeder 310.

[0026] The lower electrode assembly disclosed in this application provides an RF feeder 310, which allows the RF matching device 110 to be electrically connected to the second port of the third metal cylinder 250 through the RF feeder 310, thereby further extending the heat transfer path between the carrier plate 230 and the RF matching device 110.

[0027] Specifically, the end of the RF feeder 310 connected to the RF matching unit 110 can extend along the side away from the third metal cylinder 250, thereby increasing the distance between the RF matching unit 110 and the third metal cylinder 250, and thus reducing the heat radiated from the third metal cylinder 250 to the RF matching unit 110.

[0028] When the lower electrode assembly is used in a semiconductor process chamber, the transmission path of the radio frequency signal can be referenced. Figure 7The radio frequency (RF) signal emitted by the RF matching unit 110 sequentially travels along the RF feed element 310, the third metal cylinder 250, the interface disk 210, the second metal cylinder 222, and the first metal cylinder 221 to reach the carrier disk 230 and is fed into the chamber body 100. This enables wafer adsorption and auxiliary control of the distribution of process gas or plasma within the chamber body 100, thereby facilitating wafer processing. The return path of the RF signal can travel along the chamber body 100 and the shielding cover 120 to reach the housing of the RF matching unit 110, thus forming a complete RF signal transmission path.

[0029] It should be noted that the radio frequency signal transmission of the lower electrode assembly is carried out using surface wave transmission, such as... Figure 7 As shown, the radio frequency signal sequentially travels along the surface of the radio frequency feeder 310, the surface of the third metal cylinder 250, the surface of the interface disk 210, the surface of the second metal cylinder 222, and the surface of the first metal cylinder 221 to reach the surface of the carrier disk 230.

[0030] To optimize the path for the RF matching unit 110 to transmit RF signals to the carrier disk 230, the lower electrode assembly may optionally include a third bottom wall 251 that blocks the second port of the third metal cylinder 250, the first end of the RF feeder 310 may be connected to the center of the third bottom wall 251, and the second end of the RF feeder 310 may be used to receive RF signals.

[0031] It should be noted that the central axis of the first metal cylinder 221, the central axis of the second metal cylinder 222, and the central axis of the third metal cylinder 250 can all coincide with the central axis of the bearing plate 230. The central axis of the bearing plate 230 refers to the central axis perpendicular to the bearing surface of the bearing plate 230.

[0032] The lower electrode assembly disclosed in this application provides a third bottom wall 251 at the second port of the third metal cylinder 250, allowing the first end of the RF feeder 310 to be connected to the center of the third bottom wall 251. This enables the transmission path of the RF signal emitted by the RF matching unit 110 to be symmetrical in the circumferential direction of the carrier disk 230, thereby improving the uniformity of the RF signal in the circumferential direction of the carrier disk 230 when it arrives. This, in turn, improves the uniformity of the distribution of process gas or plasma above the carrier surface of the carrier disk 230, and further improves the uniformity of the semiconductor process chamber for wafer processing.

[0033] Optionally, the first metal cylinder 221 has a bent portion 221a extending along the central axis of the first metal cylinder 221. For example, please refer to... Figure 1The bending portion 221a can be a stepped structure formed in the extension direction of the central axis of the first metal cylinder 221. Of course, the bending portion 221a can also be an arc-shaped bending structure, etc. The embodiments of this application do not impose specific limitations on the bending portion 221a.

[0034] The lower electrode assembly disclosed in this application can further extend the heat transfer path between the carrier plate 230 and the RF matching unit 110 by setting the first metal cylinder 221 to a structure with a bent portion 221a, thereby further reducing the heat transferred from the carrier plate 230 to the RF matching unit 110, which in turn helps to reduce the temperature of the RF matching unit 110.

[0035] Specifically, the interface plate 210 may have a first annular recessed portion 202 surrounding the through hole 201 on the side facing the support plate 230. The first annular recessed portion 202 may communicate with the through hole 201, and the bent portion 221a may be bent into the first annular recessed portion 202.

[0036] The lower electrode assembly disclosed in this application has a first annular recessed portion 202 surrounding the through hole 201 on the side of the interface disk 210 facing the support disk 230. The first annular recessed portion 202 communicates with the through hole 201, so that the first annular recessed portion 202 can provide clearance space for the bending portion 221a, thereby allowing the bending portion 221a to be bent into the first annular recessed portion 202, which is beneficial to the compactness of the lower electrode assembly structure.

[0037] In one possible embodiment, the interface disk 210 can be used to seal the connection with the chamber wall of the chamber body 100 of the semiconductor process chamber, the first port of the first metal cylinder 221 can be sealed to the carrier disk 230, the second port of the first metal cylinder 221 can be sealed to the first port of the second metal cylinder 222, and the second port of the second metal cylinder 222 can be sealed to the interface disk 210.

[0038] Specifically, when processing wafers in a semiconductor process chamber, the interior of the chamber body 100 is typically in a vacuum state. When the lower electrode assembly is used in the semiconductor process chamber, the bottom wall of the chamber body 100 can have an opening. Both the interface disk 210 and the carrier disk 230 can be located within the chamber body 100, and the edge of the interface disk 210 can be sealed against the edge of the opening. With the first port of the first metal cylinder 221 sealed to the carrier disk 230, the second port of the first metal cylinder 221 sealed to the first port of the second metal cylinder 222, and the second port of the second metal cylinder 222 sealed to the interface disk 210, the interior of the chamber body 100 is in a vacuum state. Since the first thermal insulation gap 223 communicates with the interior of the chamber body 100, the first thermal insulation gap 223 is also in a vacuum state. Because vacuum has good thermal insulation capabilities, the heat radiated from the first metal cylinder 221 to the second metal cylinder 222 can be further reduced.

[0039] To reduce the heat radiated from the carrier plate 230 to the interface plate 210, the lower electrode assembly may optionally include a ring-shaped heat-insulating pad 240. The heat-insulating pad 240 may be disposed between the carrier plate 230 and the interface plate 210, and may surround the first port of the first metal cylinder 221. The heat-insulating pad 240 may have a first gap 232 with the carrier plate 230, and this first gap 232 may communicate with a first heat-insulating gap 223. It should be noted that the first gap 232 between the heat-insulating pad 240 and the carrier plate 230 is relatively small, and the amount of gas or plasma within the chamber body 100 entering the first heat-insulating gap 223 through the first gap 232 is very small, so its impact on heat transfer is negligible.

[0040] The lower electrode assembly disclosed in this application reduces the heat radiated from the carrier plate 230 to the interface plate 210 by providing a heat insulation pad 240 between the carrier plate 230 and the interface plate 210, thereby preventing the interface plate 210 from overheating and consequently preventing the RF matching unit 110 from overheating. The first gap 232 between the heat insulation pad 240 and the carrier plate 230 not only prevents interference between the heat insulation pad 240 and the carrier plate 230, but also prevents gas or plasma in the chamber body 100 from entering the first heat insulation gap 223 and affecting the thermal radiation between the first metal cylinder 221 and the second metal cylinder 222.

[0041] Optionally, the second port of the second metal cylinder 222 may have a flange 222a, through which the second metal cylinder 222 can be attached to the interface plate 210. A second sealing ring 350 and a second conductive washer 380 may be provided between the flange 222a and the interface plate 210. The second sealing ring 350 can seal the connection between the flange 222a and the interface plate 210, and the second conductive washer 380 can improve the electrical connection stability between the second metal cylinder 222 and the interface plate 210.

[0042] The lower electrode assembly disclosed in this application sets the second port of the second metal cylinder 222 as a flange 222a structure, so that the second metal cylinder 222 overlaps the interface plate 210 through the flange 222a, thereby making the installation of the second metal cylinder 222 and the interface plate 210 more stable.

[0043] In another embodiment, the interface plate 210 may have a second annular recessed portion 203 surrounding the through hole 201 on the side opposite to the support plate 230. The second port of the second metal cylinder 222 may extend into the second annular recessed portion 203 and may be welded to the inner wall of the second annular recessed portion 203.

[0044] The lower electrode assembly disclosed in this application has a second annular recessed portion 203 surrounding the through hole 201 on the side of the interface disk 210 facing away from the support disk 230. This allows the second port of the second metal cylinder 222 to extend into the second annular recessed portion 203, thereby allowing the second metal cylinder 222 to occupy part of the space of the interface disk 210, which is beneficial to the compactness of the lower electrode assembly structure. By welding the second port of the second metal cylinder 222 to the inner wall of the second annular recessed portion 203, the connection between the second metal cylinder 222 and the interface disk 210 is made more stable.

[0045] Please refer to Figure 1 and Figure 2 The first port of the second metal cylinder 222 can be connected to the outer wall of the second port of the first metal cylinder 221. The first port of the second metal cylinder 222 and the outer wall of the second port of the first metal cylinder 221 can be connected by welding. Of course, the second metal cylinder 222 and the first metal cylinder 221 can also be integrally formed by die casting or other methods.

[0046] Please refer to Figure 6 In another embodiment, the lower electrode assembly may further include a first bottom wall 221b that blocks the second port of the first metal cylinder 221, and a second bottom wall 222b that blocks the first port of the second metal cylinder 222, wherein the first bottom wall 221b may be supported on the second bottom wall 222b.

[0047] When the second metal cylinder 222 and the first metal cylinder 221 are connected by the first bottom wall 221b supporting the second bottom wall 222b, in order to improve the electrical connection stability between the second metal cylinder 222 and the first metal cylinder 221, a conductive washer 260 may be provided between the first bottom wall 221b and the second bottom wall 222b. By providing the conductive washer 260, the electrical connection stability between the first bottom wall 221b and the second bottom wall 222b can be improved.

[0048] Furthermore, the first bottom wall 221b may have a first clearance hole, and the second bottom wall 222b may have a second clearance hole. The first clearance hole may be opposite to the second clearance hole. The lower electrode assembly may also include a first sealing ring 270, which can seal between the first bottom wall 221b and the second bottom wall 222b. In the extension direction of the central axis of the first metal cylinder 221, the projections of the first clearance hole and the second clearance hole can both be located within the projection of the first sealing ring 270. The first clearance hole and the second clearance hole can be used to avoid cables connected to the carrier plate 230 (such as cables connected to the heating wire 231). The cables can pass through the first clearance hole, the second clearance hole, and the internal space of the first metal cylinder 221 in sequence to connect to the carrier plate 230. By setting the first sealing ring 270, the first sealing ring 270 is sealed between the first bottom wall 221b and the second bottom wall 222b, and the projections of the first clearance hole and the second clearance hole are both located at the projection of the first sealing ring 270. This allows the first sealing ring 270 to seal and isolate the first heat insulation gap 223 from the first clearance hole and the second clearance hole, thereby preventing the first clearance hole and the second clearance hole from affecting the internal environment of the first heat insulation gap 223.

[0049] To further alleviate the problem of excessive temperature in the RF matching unit 110, the interface panel 210 may optionally be provided with a cooling channel 211, which can be used to introduce a cooling medium. The cooling channel 211 can be located near the support structure 220 to rapidly cool the support structure 220.

[0050] The lower electrode assembly disclosed in this application opens a cooling channel 211 on the interface disk 210, allowing a cooling medium to pass through the cooling channel 211. This cooling medium can then remove heat from the interface disk 210, thereby reducing the temperature of the interface disk 210 and further reducing the heat transferred from the interface disk 210 to the RF matching unit 110. This can further alleviate the problem of the RF matching unit 110 being too hot.

[0051] This application also discloses a semiconductor process chamber, which includes a chamber body 100 and the lower electrode assembly disclosed in the above embodiments. The interface disk 210 and the carrier disk 230 are both located within the chamber body 100. The bottom wall of the chamber body 100 has an opening, and the support structure 220 passes through the opening to support the carrier disk 230.

[0052] Specifically, the edge of the interface disk 210 can be supported on the edge of the opening, the first port of the first metal cylinder 221 is connected to and supports the carrier disk 230, the second port of the first metal cylinder 221 can pass through the through hole 201 and the opening and extend out of the chamber body 100 in sequence, the first port of the second metal cylinder 222 is connected to the second port of the first metal cylinder 221, and the second port of the second metal cylinder 222 is connected to the interface disk 210, so that the carrier disk 230 is installed on the interface disk 210 through the second metal cylinder 222 and the first metal cylinder 221.

[0053] The semiconductor process chamber disclosed in this application can alleviate the problem of excessive temperature of the RF matching device 110 by setting the lower electrode assembly disclosed in the above embodiments, thereby alleviating the problem of RF matching device 110 failure due to excessive temperature.

[0054] Optionally, the semiconductor process chamber may also include a shield 120, which may be disposed over the opening of the chamber body 100 and may be disposed outside the lower electrode assembly.

[0055] The semiconductor process chamber disclosed in this application embodiment is provided with a shield 120, which covers the opening of the chamber body 100 and can cover the lower electrode assembly. This can effectively prevent radio frequency signals from radiating to the external environment. Moreover, the shield 120 can be grounded to the chamber body 100 and can be used as part of the radio frequency circuit.

[0056] Specifically, the interface panel 210 can be insulated from the chamber body 100; please refer to [reference needed]. Figure 1 The edge of the interface plate 210 can be supported on the edge of the opening by the first insulating ring 320. The outer wall of the interface plate 210 can be insulated from the chamber body 100 by the second insulating ring 330. The edge of the interface plate 210 and the first insulating ring 320 can be sealed by the third sealing ring 360. The first insulating ring 320 and the edge of the opening can be sealed by the fourth sealing ring 370. The carrier plate 230 and the chamber body 100 can be insulated from each other by the third insulating ring 340. The side wall of the carrier plate 230 and the chamber body 100 can have a second gap 233 communicating with the first gap 232. The internal space of the chamber body 100 can communicate with the first heat insulation gap 223 through the second gap 233 and the first gap 232.

[0057] The third insulating ring 340 can be supported on the second insulating ring 330. The first insulating ring 320, the second insulating ring 330, and the third insulating ring 340 can be made of ceramic material. Of course, the first insulating ring 320, the second insulating ring 330, and the third insulating ring 340 can also be made of other materials. For example, the materials of the first insulating ring 320, the second insulating ring 330, and the third insulating ring 340 can also be polyetheretherketone, polyimide, etc. The embodiments of this application do not impose specific limitations on the materials of the first insulating ring 320, the second insulating ring 330, and the third insulating ring 340.

[0058] In this embodiment, the first metal cylinder 221, the second metal cylinder 222, and the third metal cylinder 250 are all thin-walled structures, which can reduce the heat conduction area, increase the thermal resistance, and thus reduce the heat conducted to the RF matching unit 110.

[0059] The above embodiments of the present invention focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0060] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.

Claims

1. A lower electrode assembly for a semiconductor process chamber, characterized in that, The lower electrode assembly includes an interface disk (210), a support structure (220), and a carrier disk (230), wherein, The carrier disk (230) is located above the interface disk (210), the interface disk (210) is used to receive radio frequency signals, and the interface disk (210) has a through hole (201) at its center. The support structure (220) includes a first metal cylinder (221) and a second metal cylinder (222). The first port of the first metal cylinder (221) is connected to the carrier plate (230) and supports the carrier plate (230). The second port of the first metal cylinder (221) extends through the through hole (201) to the bottom of the interface plate (210). The second metal cylinder (222) is sleeved on the outside of the first metal cylinder (221) and forms a first heat insulation gap (223) with the first metal cylinder (221). The first port of the second metal cylinder (222) is connected to the second port of the first metal cylinder (221). The second port of the second metal cylinder (222) is connected to the interface plate (210) so that the radio frequency signal received by the interface plate (210) is transmitted to the carrier plate (230) in sequence through the second metal cylinder (222) and the first metal cylinder (221).

2. The lower electrode assembly according to claim 1, characterized in that, The lower electrode assembly further includes a third metal cylinder (250), which is sleeved outside the second metal cylinder (222) and forms a second heat insulation gap (224) with the second metal cylinder (222). The first port of the third metal cylinder (250) is connected to the interface disk (210), and the second port of the third metal cylinder (250) is used to receive the radio frequency signal.

3. The lower electrode assembly according to claim 2, characterized in that, The lower electrode assembly also includes an RF feed (310), the second port of the third metal cylinder (250) is electrically connected to the RF feed (310), and the RF feed (310) is used to connect to the RF matching unit (110).

4. The lower electrode assembly according to claim 3, characterized in that, The lower electrode assembly also includes a third bottom wall (251) that seals the second port of the third metal cylinder (250), the first end of the radio frequency feed (310) is connected to the center of the third bottom wall (251), and the second end of the radio frequency feed (310) is used to receive the radio frequency signal.

5. The lower electrode assembly according to claim 1, characterized in that, In the direction of extension of the central axis of the first metal cylinder (221), the first metal cylinder (221) has a bent portion (221a).

6. The lower electrode assembly according to claim 5, characterized in that, The interface disk (210) has a first annular recessed portion (202) surrounding the through hole (201) on one side facing the support disk (230). The first annular recessed portion (202) communicates with the through hole (201), and the bent portion (221a) is bent into the first annular recessed portion (202).

7. The lower electrode assembly according to claim 1, characterized in that, The interface disk (210) is used to seal the connection with the chamber wall of the chamber body (100) of the semiconductor process chamber. The first port of the first metal cylinder (221) is sealed to the carrier disk (230). The second port of the first metal cylinder (221) is sealed to the first port of the second metal cylinder (222). The second port of the second metal cylinder (222) is sealed to the interface disk (210).

8. The lower electrode assembly according to claim 7, characterized in that, The lower electrode assembly also includes a ring-shaped heat insulation pad (240), which is disposed between the support plate (230) and the interface plate (210) and surrounds the outer opening of the first port of the first metal cylinder (221). There is a first gap (232) between the heat insulation pad (240) and the support plate (230), and the first gap (232) between the heat insulation pad (240) and the support plate (230) communicates with the first heat insulation gap (223).

9. The lower electrode assembly according to claim 1, characterized in that, The second port of the second metal cylinder (222) has a flange (222a), and the second metal cylinder (222) is attached to the interface plate (210) by the flange (222a); or, The interface plate (210) has a second annular recessed portion (203) surrounding the through hole (201) on the side opposite to the bearing plate (230). The second port of the second metal cylinder (222) extends into the second annular recessed portion (203) and is welded to the inner wall of the second annular recessed portion (203).

10. The lower electrode assembly according to claim 1, characterized in that, The first port of the second metal cylinder (222) is connected to the outer wall of the second port of the first metal cylinder (221); or, The lower electrode assembly further includes a first bottom wall (221b) that blocks the second port of the first metal cylinder (221), and a second bottom wall (222b) that blocks the first port of the second metal cylinder (222), the first bottom wall (221b) being supported by the second bottom wall (222b).

11. The lower electrode assembly according to claim 10, characterized in that, A conductive gasket (260) is provided between the first bottom wall (221b) and the second bottom wall (222b).

12. The lower electrode assembly according to claim 10, characterized in that, The first bottom wall (221b) has a first clearance hole, and the second bottom wall (222b) has a second clearance hole. The first clearance hole and the second clearance hole are opposite to each other. The lower electrode assembly also includes a first sealing ring (270). The first sealing ring (270) seals between the first bottom wall (221b) and the second bottom wall (222b). In the extension direction of the central axis of the first metal cylinder (221), the projections of the first clearance hole and the second clearance hole are both located within the projection of the first sealing ring (270).

13. The lower electrode assembly according to claim 1, characterized in that, The interface panel (210) has a cooling channel (211) for introducing a cooling medium.

14. A semiconductor process chamber, characterized in that, Includes a chamber body (100) and a lower electrode assembly as described in any one of claims 1 to 13; The interface disk (210) and the carrier disk (230) are both located inside the chamber body (100). The bottom wall of the chamber body (100) has an opening, and the support structure (220) passes through the opening to support the carrier disk (230).

15. The semiconductor process chamber according to claim 14, characterized in that, The semiconductor process chamber also includes a shield (120), which covers the opening of the chamber body (100) and is located outside the lower electrode assembly.

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