Indium film deposition method for preventing low-temperature photoresist cracking and indium infiltration

Abstract

The invention discloses an indium thin film deposition method for preventing low-temperature photoresist cracking and indium infiltration, and belongs to the field of infrared detectors. According to the method, conventional one-time cooling and one-time deposition are changed into multiple-time cooling and multiple-time deposition, that is, the deposition temperature is reduced to the target temperature for multiple times, one layer of indium film is deposited after the target temperature is reduced every time, a stepped period is formed through multiple-time cooling and multiple-time deposition, and finally indium film deposition is completed. According to the method, the advantages of adhesion and flexibility at low temperature of the indium film are utilized, and the indium film deposited on the surface of the photoresist absorbs a part of stress introduced by low temperature in the photoresist, so that the low-temperature cracking of the photoresist is inhibited. Besides, the method can inhibit extension of cracks of the photoresist at a deep low temperature, and indium deposited at a subsequent low-temperature section is prevented from permeating through the cracks and infiltrating through an indium film deposited at a higher temperature in the first step, so that the reading circuit is prevented from being damaged due to the infiltrating of the indium.

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