Temperature control method and device, semiconductor processing equipment and storage medium

Abstract

The application provides a temperature control method, device, semiconductor processing equipment and storage medium. The temperature control method comprises the following steps: obtaining a first target temperature of a heating ring before entering a cleaning stage of a semiconductor processing process, and determining a second target temperature with a temperature allowance according to the first target temperature; determining a first proportional coefficient, a first integral coefficient and a first differential coefficient for controlling the temperature of the heating ring; and adjusting the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first differential coefficient and a preset transfer function, so that the actual temperature is between the first target temperature and the second target temperature. The application can switch the set values of the proportional coefficient, the integral coefficient and the differential coefficient before entering the cleaning stage, so as to ensure that the output power of the heating ring is not zero, thereby ensuring the stability of the semiconductor processing process and the normal operation of the equipment.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device processing, and more particularly to a temperature control method, a temperature control device, a semiconductor processing equipment, and a computer-readable storage medium. Background Technology

[0002] During the plasma cleaning process on semiconductor processing equipment, a significant amount of heat is released inside the process chamber, while the equipment's own heat dissipation capacity is limited. Currently, electrostatic chuck heating rings (SHDHeating Rings) typically use only one set of PID control parameters for temperature regulation. Under these conditions, the contradiction between heat accumulation inside the chamber and insufficient heat dissipation capacity is difficult to effectively balance with a single PID parameter, easily leading to the SHDHeating Ring's output power dropping to zero, thus affecting process stability and the normal operation of the equipment.

[0003] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for an improved temperature control method to ensure that the output power of the heating ring does not drop to zero, thereby ensuring the stability of the semiconductor processing technology and the normal operation of the equipment. Summary of the Invention

[0004] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0005] To overcome the aforementioned deficiencies in the prior art, the present invention provides a temperature control method, a temperature control device, a semiconductor processing equipment, and a computer-readable storage medium. By switching the set values ​​of the proportional coefficient, integral coefficient, and derivative coefficient before entering the cleaning stage, the actual temperature of the heating ring is adjusted, and its actual temperature is kept between the actual first target temperature and the second target temperature with a temperature margin. This ensures that the output power of the heating ring does not drop to zero, thereby ensuring the stability of the semiconductor processing process and the normal operation of the equipment.

[0006] Specifically, the temperature control method provided by the first aspect of the present invention is characterized by comprising the following steps: before entering the cleaning stage of the semiconductor processing technology, obtaining a first target temperature of the heating ring, and determining a second target temperature with a temperature margin based on it; determining a first proportional coefficient, a first integral coefficient, and a first derivative coefficient for controlling the temperature of the heating ring; and adjusting the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first derivative coefficient, and a preset transfer function, so that it is between the first target temperature and the second target temperature.

[0007] Furthermore, in some embodiments of the present invention, the step of determining the first proportional coefficient, the first integral coefficient, and the first differential coefficient for controlling the temperature of the heating ring includes: obtaining the second proportional coefficient, the second integral coefficient, and the second differential coefficient for controlling the temperature of the heating ring in the process stage; and determining the first proportional coefficient, the first integral coefficient, and the first differential coefficient suitable for the cleaning stage based on the second proportional coefficient, the second integral coefficient, and the second differential coefficient before entering the cleaning stage.

[0008] Furthermore, in some embodiments of the present invention, the second proportional coefficient is greater than the first proportional coefficient. The second integral coefficient is greater than the first integral coefficient. The second differential coefficient is less than the first differential coefficient.

[0009] Furthermore, in some embodiments of the present invention, the following steps are also included: in response to the end of the cleaning stage, adjusting the actual temperature of the heating ring according to the second proportional coefficient, the second integral coefficient, the second differential coefficient and the transfer function, so that the actual temperature directly reaches the first target temperature.

[0010] Furthermore, in some embodiments of the present invention, the step of adjusting the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first differential coefficient, and a preset transfer function, so that it is between the first target temperature and the second target temperature, includes:

[0011]

[0012] Among them, K p K is the first proportionality coefficient. i K is the first integral coefficient. d Let be the first differential coefficient, t be the current time, e(t) be the difference between the second target temperature and the actual temperature of the heating ring at the current time, and u(t) be the output power of the heating ring at the current time.

[0013] Furthermore, in some embodiments of the present invention, the step of adjusting the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first differential coefficient and the preset transfer function so that it is between the first target temperature and the second target temperature further includes: the actual temperature of the heating ring is between the first target temperature and the second target temperature, so that the heat generation power W2 of the process chamber is less than the heat dissipation power W0, thereby preventing the output power W1 of the heating ring from dropping to zero.

[0014] Furthermore, in some embodiments of the present invention, the temperature margin between the first target temperature and the second target temperature is in the range of 6 to 8°C.

[0015] Furthermore, the temperature control device provided according to a second aspect of the present invention includes a memory and a controller. The controller is configured to: acquire a first target temperature of the heating ring before entering the cleaning stage of the semiconductor processing technology, and determine a second target temperature with a temperature margin based on that temperature; determine a first proportional coefficient, a first integral coefficient, and a first derivative coefficient for controlling the temperature of the heating ring; and adjust the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first derivative coefficient, and a preset transfer function, so that it is between the first target temperature and the second target temperature.

[0016] Furthermore, the semiconductor processing apparatus provided according to a third aspect of the present invention includes a process chamber and a temperature control device provided according to a second aspect of the present invention. The process chamber is used to perform semiconductor processing on a wafer to be processed, and a heating ring is provided therein for heating the wafer. The temperature control device is used to control the actual temperature of the heating ring during the process stage and the cleaning stage of the semiconductor processing.

[0017] Furthermore, the computer-readable storage medium provided according to the fourth aspect of the present invention stores computer instructions thereon. When the computer instructions are executed by a processor, the temperature control method as provided in the first aspect of the present invention is implemented. Attached Figure Description

[0018] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0019] Figure 1 A schematic diagram of a heating ring temperature model provided according to a reference example is shown.

[0020] Figure 2A temperature change curve of the heating ring is shown based on a reference example.

[0021] Figure 3 The output power variation curve of the heating ring provided according to a reference example is shown.

[0022] Figure 4 A schematic flowchart of a temperature control method according to some embodiments of the present invention is shown.

[0023] Figure 5 A schematic diagram of the principle of a temperature control method provided according to some embodiments of the present invention is shown.

[0024] Figure 6 A schematic diagram of a heating ring temperature model provided according to some embodiments of the present invention is shown.

[0025] Figure 7 A schematic diagram of temperature change curves is shown for the prior art control method and the control method of this application according to some embodiments of the present invention.

[0026] Figure 8 A schematic diagram of the output power variation curves of the prior art control method and the control method of this application, provided by some embodiments of the present invention, is shown. Detailed Implementation

[0027] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0028] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0029] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0030] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0031] Please refer to the reference. Figures 1-3 . Figure 1 A schematic diagram of a heating ring temperature model provided according to a reference example is shown. Figure 2 A temperature change curve of the heating ring is shown based on a reference example. Figure 3 The output power variation curve of the heating ring provided according to a reference example is shown.

[0032] like Figure 1 As shown, the output power of the heating ring is W1, the power portion of the heat generated by the reaction in the process chamber transferred to the heating ring is W2, and the heat dissipation power of the heating ring is W0. Figure 2 and Figure 3 As shown, since the actual temperature of the heating ring has reached the set temperature t0, and the heat generation power W2 during the cleaning stage is still greater than the heat dissipation power W0, the output power W1 of the heating ring drops to zero. This leads to uncontrollable temperature of the heating ring during the cleaning stage, thus affecting the stability of the semiconductor processing technology. Moreover, the temperature shows a trend of dropping to zero, and the temperature will continue to rise, exceeding the acceptable range within the process chamber.

[0033] As mentioned above, during the plasma cleaning process on semiconductor processing equipment, a significant amount of heat is released inside the process chamber, while the equipment's own heat dissipation capacity is limited. Currently, electrostatic chuck heating rings (SHD heating rings) typically use only one set of PID control parameters for temperature regulation. Under these conditions, the contradiction between heat accumulation inside the chamber and insufficient heat dissipation capacity of the equipment is difficult to effectively balance with a single PID parameter, easily leading to the SHD heating ring's output power dropping to zero, thus affecting process stability and the normal operation of the equipment.

[0034] To overcome the aforementioned deficiencies in the prior art, the present invention provides a temperature control method, a temperature control device, a semiconductor processing equipment, and a computer-readable storage medium. By switching the set values ​​of the proportional coefficient, integral coefficient, and derivative coefficient before entering the cleaning stage, the actual temperature of the heating ring is adjusted, and its actual temperature is kept between the actual first target temperature and the second target temperature with a temperature margin. This ensures that the output power of the heating ring does not drop to zero, thereby ensuring the stability of the semiconductor processing process and the normal operation of the equipment.

[0035] In some non-limiting embodiments, the temperature control device provided in the second aspect of the present invention can be implemented in the semiconductor processing equipment provided in the third aspect of the present invention.

[0036] Specifically, the semiconductor processing apparatus provided in the third aspect of the present invention includes a process chamber and the temperature control device as described in the second aspect of the present invention. Here, the process chamber is used to perform semiconductor processing on a wafer to be processed, and a heating ring is provided for heating the wafer. The temperature control device is used to control the actual temperature of the heating ring during the process stage and the cleaning stage of the semiconductor processing.

[0037] Furthermore, in some non-limiting embodiments, the temperature control device provided in the second aspect of the present invention includes a memory and a controller. Here, the memory includes, but is not limited to, the computer-readable storage medium provided in the third aspect, on which computer instructions are stored. The controller is connected to the memory and configured to execute the computer instructions stored in the memory to implement the temperature control method as provided in the first aspect of the present invention.

[0038] The working principle of the above-mentioned temperature control device will be described below with reference to some embodiments of temperature control methods. Those skilled in the art will understand that these embodiments of temperature control methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concept of the invention and provide some specific solutions convenient for public implementation, rather than limiting all functions or all operating methods of the temperature control device. Similarly, the temperature control device is also only one non-limiting implementation provided by the present invention, and does not constitute a limitation on the executing entity and execution order of the steps in these temperature control methods.

[0039] Please refer to Figure 4 . Figure 4 A schematic flowchart of a temperature control method according to some embodiments of the present invention is shown.

[0040] like Figure 4As shown, before entering the cleaning stage of the semiconductor processing technology, the controller can first obtain the first target temperature t0 of the heating ring and determine a second target temperature t1 with a temperature margin based on it. Here, the temperature margin between the first target temperature t0 and the second target temperature t1 is in the range of 6 to 8°C.

[0041] After that, as Figure 1 As shown, the controller can determine a first proportional coefficient, a first integral coefficient, and a first derivative coefficient for controlling the temperature of the heating ring.

[0042] Specifically, the controller can acquire a second proportional coefficient, a second integral coefficient, and a second derivative coefficient used in the process stage to control the temperature of the heating ring.

[0043] Before entering the cleaning phase, the controller can determine a first proportional coefficient, a first integral coefficient, and a first differential coefficient suitable for the cleaning phase based on a second proportional coefficient, a second integral coefficient, and a second differential coefficient. Here, the second proportional coefficient is greater than the first proportional coefficient, the second integral coefficient is greater than the first integral coefficient, and the second differential coefficient is less than the first differential coefficient.

[0044] Please refer to the reference. Figure 5 and Figure 6 . Figure 5 A schematic diagram of the principle of a temperature control method provided according to some embodiments of the present invention is shown. Figure 6 A schematic diagram of a heating ring temperature model provided according to some embodiments of the present invention is shown.

[0045] After that, such as Figure 5 and Figure 6 As shown, the controller can adjust the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first derivative coefficient, and the preset transfer function, so that it is between the first target temperature and the second target temperature.

[0046]

[0047] Among them, K p K is the first proportionality coefficient. i K is the first integral coefficient. d Let t be the first differential coefficient, t be the current time, e(t) be the difference between the second target temperature and the actual temperature of the heating ring at the current time, and u(t) be the output power of the heating ring at the current time.

[0048] Specifically, in PID control, K p K is used to control the current output of the heating ring. i Used to correct previously accumulated temperature deviations, K dThis is used to predict and control future temperature changes. Therefore, reducing the proportional and integral components can lower the power output, while appropriately increasing the derivative component can more clearly predict the temperature rise caused by heat generation during the cleaning phase, thus maintaining the low power output of the heating ring.

[0049] like Figure 5 and Figure 6 As shown, the actual temperature of the heating ring is between the first target temperature and the second target temperature, so that the heat generation power W2 of the process chamber is less than the heat dissipation power W0, thereby ensuring that the output power W1 of the heating ring does not drop to zero.

[0050] Subsequently, in response to the end of the cleaning phase, based on the second proportional coefficient, second integral coefficient, second derivative coefficient, and transfer function, the controller can adjust the actual temperature of the heating ring to directly reach the first target temperature. Thus, after the cleaning phase, the controller can adjust the PID control's temperature target point and parameters back to their original values ​​without affecting subsequent process operations.

[0051] Please combine Figure 7 and Figure 8 . Figure 7 A schematic diagram of temperature change curves is shown for the prior art control method and the control method of this application according to some embodiments of the present invention. Figure 8 A schematic diagram of the output power variation curves of the prior art control method and the control method of this application, provided by some embodiments of the present invention, is shown.

[0052] To verify the effectiveness of the temperature control method of this application in controlling the temperature of the heating ring, those skilled in the art can compare the heating ring temperature and output power controlled by existing control methods with those controlled by the method of this application. Figure 7 and Figure 8 As shown, the second target temperature t1 is 250℃, and the first target temperature t0 is 257℃. At 10 seconds, the semiconductor processing cleaning stage begins. Between 10 and 50 seconds, the cleaning stage generates a large amount of heat. Existing control methods experience a period where the output power drops to zero. However, in the control method of this application, the temperature of the heating ring rises slightly, but because it does not reach the actual first target temperature, its output power does not drop to zero; instead, it maintains a low-power control state.

[0053] In summary, the temperature control method, device, semiconductor processing equipment, and storage medium provided by the present invention can all adjust the actual temperature of the heating ring by switching the set values ​​of the proportional coefficient, integral coefficient, and derivative coefficient before entering the cleaning stage, and keep the actual temperature between the actual first target temperature and the second target temperature with a temperature margin, so as to ensure that the output power of the heating ring does not drop to zero, thereby ensuring the stability of the semiconductor processing process and the normal operation of the equipment.

[0054] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0055] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor such that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0056] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Any connection is also legitimately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used in this article, disk and disc include compact discs (CDs), laser discs, optical discs, digital multi-purpose discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0057] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A temperature control method, characterized in that, Includes the following steps: The second proportional coefficient, the second integral coefficient, and the second differential coefficient are obtained for controlling the temperature of the heating ring in the process stage of semiconductor processing. In the process stage, the temperature of the heating ring is controlled according to the second proportional coefficient, the second integral coefficient and the second differential coefficient so that its actual temperature reaches the first target temperature. Before entering the cleaning stage of the semiconductor processing technology, a second target temperature with a temperature margin is determined based on the first target temperature; Based on the second proportional coefficient, the second integral coefficient, and the second differential coefficient, a first proportional coefficient, a first integral coefficient, and a first differential coefficient suitable for the cleaning stage are determined, wherein the second proportional coefficient is greater than the first proportional coefficient, the second integral coefficient is greater than the first integral coefficient, and the second differential coefficient is less than the first differential coefficient. as well as The actual temperature of the heating ring is adjusted according to the first proportional coefficient, the first integral coefficient, the first differential coefficient, and the preset transfer function, so that it is between the first target temperature and the second target temperature.

2. The temperature control method as described in claim 1, characterized in that, It also includes the following steps: In response to the end of the cleaning phase, the actual temperature of the heating ring is adjusted according to the second proportional coefficient, the second integral coefficient, the second differential coefficient, and the transfer function, so that its actual temperature directly reaches the first target temperature.

3. The temperature control method as described in claim 1, characterized in that, The step of adjusting the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first differential coefficient, and the preset transfer function to make it fall between the first target temperature and the second target temperature includes: in, This is the first proportionality coefficient. Let be the first integral coefficient. The first differential coefficient, For the current moment, This is the difference between the second target temperature and the actual temperature of the heating ring at the current moment. This represents the output power of the heating ring at the current moment.

4. The temperature control method as described in claim 3, characterized in that, The step of adjusting the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first differential coefficient, and the preset transfer function to make it fall between the first target temperature and the second target temperature further includes: The actual temperature of the heating ring is between the first target temperature and the second target temperature, which allows the heat generation power of the process chamber to be maximized. Less than heat dissipation power This will increase the output power of the heating ring. It doesn't drop zeros.

5. The temperature control method as described in claim 1, characterized in that, The temperature margin between the first target temperature and the second target temperature is in the range of 6~8℃.

6. A temperature control device, characterized in that, include: Memory; The controller is configured to: acquire a second proportional coefficient, a second integral coefficient, and a second derivative coefficient for controlling the temperature of a heating ring during a process stage of a semiconductor processing technology; control the temperature of the heating ring according to the second proportional coefficient, the second integral coefficient, and the second derivative coefficient during the process stage to achieve an actual temperature of a first target temperature; and determine a second target temperature with a temperature margin before entering the cleaning stage of the semiconductor processing technology. Based on the second proportional coefficient, the second integral coefficient, and the second differential coefficient, a first proportional coefficient, a first integral coefficient, and a first differential coefficient suitable for the cleaning stage are determined, wherein the second proportional coefficient is greater than the first proportional coefficient, the second integral coefficient is greater than the first integral coefficient, and the second differential coefficient is less than the first differential coefficient. And adjust the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first differential coefficient and the preset transfer function so that it is between the first target temperature and the second target temperature.

7. A semiconductor processing apparatus, characterized in that, include: A process chamber for performing semiconductor processing on a wafer to be processed, wherein a heating ring is provided for heating the wafer; as well as The temperature control device as described in claim 6 is used to control the actual temperature of the heating ring during the process stage and cleaning stage of the semiconductor processing technology.

8. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the temperature control method as described in any one of claims 1 to 5 is implemented.

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