Touch display device

Abstract

This application provides a touch display device, including a thin-film transistor array substrate, a light-emitting device layer, an encapsulation layer, and a touch device. The touch device includes a first interlayer insulating layer, a first metal electrode, a second interlayer insulating layer, and a second metal electrode. The touch display device includes a display area and a peripheral area. The peripheral area has through-holes and bonding holes, both of which penetrate the second interlayer insulating layer, the first interlayer insulating layer, and the planarization layer, exposing bonding metal pads. A portion of the second metal electrode is disposed within the through-hole and electrically connected to the bonding metal pad. The through-hole is located on the side of the bonding hole closer to the display area, and the coverage area of ​​the second metal electrode in the peripheral area is outside the opening area of ​​the bonding hole. By limiting the coverage area of ​​the second metal electrode, connection between the second metal electrode and residual metal portions in the undercut portion is avoided, thereby preventing short circuits and improving the electrical performance and reliability of the touch display device.

Description

Technical Field

[0001] This application relates to the field of display technology, and more specifically to a touch display device. Background Technology

[0002] Touch display panels typically consist of a multi-layered structure including a thin-film transistor array substrate, a light-emitting device layer, an encapsulation layer, and touch devices. The touch devices mainly consist of a first interlayer insulating layer, a first metal electrode, a second interlayer insulating layer (touch insulating layer), and a second metal electrode. These components work together to achieve touch functionality.

[0003] Traditional touch insulating layers are typically made of inorganic materials. However, inorganic materials exhibit poor bending performance and relatively high dielectric constants, which limit their application in touch display panels. To improve the bending and touch performance of touch display panels, the material for the touch insulating layer has been changed from inorganic materials to organic resin materials.

[0004] Organic resin materials offer better bending performance and lower dielectric constants compared to inorganic materials, allowing touch insulating layers made from organic resins to better meet the performance requirements of touch display panels. However, during manufacturing, due to the height difference between the display area and the surrounding area of ​​the touch display panel, more organic resin material accumulates in the surrounding area during leveling. Under the same exposure conditions, the thinner display area can cure completely, while the thicker material at the bottom of the surrounding area cannot cure completely. In the subsequent development process, the incompletely cured material is dissolved by the developer, forming an undercut in the surrounding area.

[0005] During the formation of the second metal electrode, a portion of it is formed in the undercut section. Due to its unique location, this portion of metal cannot be effectively removed by conventional etching processes, resulting in residual metal. These residual metal portions may cause short circuits in the touch display panel, thereby affecting its electrical performance and product reliability.

[0006] Therefore, it is necessary to propose a new technical solution to solve the above-mentioned technical problems. Summary of the Invention

[0007] The purpose of the embodiments of this application is to provide a touch display device that aims to solve the technical problem that touch display devices are prone to short circuits.

[0008] This application provides a touch display device, comprising: a thin-film transistor array substrate; a light-emitting device layer disposed on the thin-film transistor array substrate; an encapsulation layer disposed on the light-emitting device layer; and a touch device disposed on the encapsulation layer. The touch device includes a first interlayer insulating layer, a first metal electrode disposed on the first interlayer insulating layer, a second interlayer insulating layer disposed on the first interlayer insulating layer, and a second metal electrode disposed on the second interlayer insulating layer. The touch display device includes a display area and a peripheral area located on at least one side of the display area. The peripheral area is provided with a through-hole and a bonding hole. Both the through-hole and the bonding hole penetrate the second interlayer insulating layer, the first interlayer insulating layer, and a planarization layer of the thin-film transistor array substrate. Both the through-hole and the bonding hole expose a bonding metal pad of the thin-film transistor array substrate. A portion of the second metal electrode is disposed within the through-hole and electrically connected to the bonding metal pad. The through-hole is located on the side of the bonding hole closer to the display area. The coverage area of ​​the second metal electrode in the peripheral area is outside the opening area of ​​the bonding hole.

[0009] In the above-mentioned touch display device, the edge line of the second metal electrode is located between the center line of the through hole and the center line of the bonding hole.

[0010] In the aforementioned touch display device, in the peripheral region, the distance from the edge line of the second metal electrode to the edge line of the bonding hole located in the portion of the second interlayer insulating layer is greater than or equal to 0, and less than the distance from the edge line of the second metal electrode to the edge line of the bonding hole located at the bottom of the planarization layer.

[0011] In the aforementioned touch display device, in the peripheral region, the edge line of the second metal electrode is straight and parallel to the edge line of the portion of the bonding hole located in the second interlayer insulating layer.

[0012] In the above-mentioned touch display device, the size of the bonding hole at the bottom of the planarization layer is smaller than the size of the portion of the bonding hole located in the first interlayer insulating layer and smaller than the size of the portion of the bonding hole located in the second interlayer insulating layer.

[0013] In the above-mentioned touch display device, the size of the bonding hole located at the bottom of the planarization layer is less than or equal to half the size of the portion of the bonding hole located in the first interlayer insulating layer.

[0014] In the aforementioned touch display device, the residual metal portion located in the undercut of the bonding hole is disposed on the planarization layer and does not contact the bonding metal pad.

[0015] In the aforementioned touch display device, the residual metal portion located in the undercut of the bonding hole does not contact the second metal electrode.

[0016] In the above-mentioned touch display device, the distance from the edge line of the second metal electrode to the edge line of the portion of the bonding hole located in the second interlayer insulating layer is greater than or equal to the diameter of the minimum circumscribed circle of the through hole.

[0017] In the above-mentioned touch display device, the bonding hole located at the bottom of the planarization layer has a larger size than the through hole located at the bottom of the planarization layer.

[0018] The touch display device provided in this application effectively solves the technical problem of short circuits in touch display devices by limiting the coverage area of ​​the second metal electrode in the peripheral region to outside the opening area of ​​the bonding hole.

[0019] Specifically, the technical solution of this application controls the coverage area of ​​the second metal electrode, preventing it from extending into the opening area of ​​the bonding hole. When the second interlayer insulating layer uses an organic resin material, the height difference between the display area and the peripheral area, as well as the leveling properties of the organic resin material, leads to a thicker accumulation of organic resin material in the peripheral area. During the exposure and development processes, the organic resin material at the bottom of the peripheral area cannot be completely cured and is dissolved by the developer, forming undercut portions. The second metal electrode enters these undercut portions during deposition. Due to the special position and shape of the undercut portions, the second metal electrode located within them cannot be effectively removed by conventional etching processes, thus forming residual metal portions. This application limits the coverage area of ​​the second metal electrode to outside the opening area of ​​the bonding hole. Even if a small amount of residual metal remains in the undercut portion of the second interlayer insulating layer, since the second metal electrode itself does not extend into the bonding hole area, there is no electrical connection between these residual metal portions and the second metal electrode, thus preventing a short circuit in the second metal electrode. Meanwhile, by properly configuring the position of the through holes, placing them on the side of the bonding holes closer to the display area, the second metal electrode can achieve a reliable electrical connection with the bonding metal pad through the through holes, meeting the requirements of electrical connection while avoiding short circuit problems. Attached Figure Description

[0020] Figure 1 This is a cross-sectional view of the touch display panel in the touch display device provided in the embodiments of this application.

[0021] Figure 2 yes Figure 1 The image shows a top view of the portion of the touch display panel located in the outer area.

[0022] Figure 3This is a schematic diagram of a method for manufacturing a touch display device provided in an embodiment of this application. Detailed Implementation

[0023] The specific embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0024] The terms “first,” “second,” and similar words do not indicate any order, quantity, or importance, but are merely used to distinguish different technical features. The terms “multiple,” and similar words mean two or more, unless otherwise expressly specified.

[0025] The embodiments of this application can be combined with each other.

[0026] The embodiments of this application provide a touch display device that effectively avoids short circuit problems caused by the formation of an undercut portion in the touch insulating layer (the second interlayer insulating layer 2043, made of organic resin material) by optimizing the coverage area of ​​the second metal electrode 2044.

[0027] The touch display device includes a touch display panel and a driver chip (not shown in the figure), such as Figure 1 As shown, the touch display panel includes a display area AA and a peripheral area BA located on at least one side of the display area AA. The portion of the touch display panel located in the display area AA is used to display image content, while the portion of the touch display panel located in the peripheral area BA is mainly used for electrical connection and signal transmission. The touch display panel, from bottom to top, includes a thin-film transistor array substrate 201, a light-emitting device layer 202, an encapsulation layer 203, and a touch device 204. The pins of the driving chip are bonded to the bonding metal pads 2012 of the touch display panel in the peripheral area BA.

[0028] The thin-film transistor array substrate 201 includes a substrate (not shown) and thin-film transistor circuits 2011 disposed on the substrate for driving pixels. The thin-film transistor array substrate 201 includes multiple functional layers, including bonding metal pads 2012 and a planarization layer 2013 disposed on the bonding metal pads 2012. The bonding metal pads 2012 are located in the source / drain metal layers of the thin-film transistor array substrate 201 and are used to achieve electrical connections with the pins of the driving chip. The material of the bonding metal pads 2012 is typically aluminum, copper, or their alloys. The planarization layer 2013 is disposed on the bonding metal pads 2012 and is made of an organic insulating material to eliminate surface undulations in the underlying film layers, providing a smooth base surface for the formation of subsequent film layers.

[0029] In the display area AA, a light-emitting device layer 202 is disposed on the thin-film transistor array substrate 201. The light-emitting device layer 202 includes an organic light-emitting diode (OLED), which is composed of multiple film layers such as an anode, a light-emitting material layer, and a cathode, and is used to generate light of different colors such as red, green, and blue. The light-emitting device layer 202 achieves independent control and driving of pixels through electrical connection with the thin-film transistor array substrate 201. The brightness and color of each pixel are adjusted by controlling the current flowing through the organic light-emitting diode. An encapsulation layer 203 is disposed on the light-emitting device layer 202. The encapsulation layer 203 is used to protect the light-emitting device from the intrusion of harmful substances such as moisture and oxygen in the external environment, ensuring the long-term stable operation of the light-emitting device.

[0030] A touch device 204 is disposed on the encapsulation layer 203 to realize the touch sensing function of the touch display panel. The touch device 204 includes a first interlayer insulating layer (IL1) 2041, a first metal electrode 2042 disposed on the first interlayer insulating layer 2041, a second interlayer insulating layer (IL2) 2043 disposed on the first interlayer insulating layer 2041, and a second metal electrode 2044 disposed on the second interlayer insulating layer 2043. The first interlayer insulating layer 2041 is disposed on the encapsulation layer 203 in the display area AA and on the planarization layer 2013 in the peripheral area BA. The first interlayer insulating layer 2041 is made of an inorganic insulating material. The first metal electrode 2042 is disposed on the first interlayer insulating layer 2041 and is made of a transparent conductive material, constituting the driving electrode portion of the touch sensing electrode. At least a portion of the first metal electrode 2042 exposes the first interlayer insulating layer 2041. The first metal electrode 2042 is located on the first metal layer (Metal 1) of the touch device 204. A second interlayer insulating layer 2043 is disposed on the first interlayer insulating layer 2041, serving as a touch insulating layer and providing insulation between the first metal electrode 2042 and the second metal electrode 2044, ensuring electrical independence between the two electrode layers. The second metal electrode 2044 is disposed on the second interlayer insulating layer 2043, and cooperates with the first metal electrode 2042 to form a touch-sensing electrode pair. The second metal electrode 2044 is located on the second metal layer (Metal 2) of the touch device 204.

[0031] The second interlayer insulating layer 2043 is made of organic resin material, which has better bending performance and a lower dielectric constant compared to traditional inorganic materials. The organic resin material is a low-temperature organic adhesive with a low glass transition temperature, allowing for processing at relatively low temperatures, which helps avoid thermal damage to the underlying devices. The second interlayer insulating layer 2043 is patterned using an exposure machine, during which specific wavelengths of ultraviolet light are used to selectively cure the organic resin material. Due to the height difference between the display area AA and the surrounding area BA of the touch display panel, the surface height of the display area AA is usually higher than that of the surrounding area BA. During the leveling process, more organic resin material accumulates in the surrounding area BA, resulting in an uneven thickness distribution. In the surrounding area BA, the thickness of the second interlayer insulating layer 2043 is typically 20% to 50% thicker than that of the display area AA. The second interlayer insulating layer 2043 forms an undercut at the bonding hole BH, which is caused by the uneven curing of the organic resin material at the edge of the bonding hole BH.

[0032] like Figure 1 and Figure 2 As shown, the touch display panel provided in the embodiments of this application has through-holes TH and bonding holes BH in the peripheral area BA. Both through-holes TH and BH penetrate the second interlayer insulating layer 2043, the first interlayer insulating layer 2041, and the planarization layer 2013 of the thin-film transistor array substrate 201. Both through-holes TH and BH expose the bonding metal pads 2012 of the thin-film transistor array substrate 201. Through-hole TH is used to achieve electrical connection between the second metal electrode 2044 and the bonding metal pad 2012. Bonding hole BH is used to provide electrical connection between the pins of the driver chip and the bonding metal pad 2012. The pins of the driver chip form electrical and mechanical connections with the bonding metal pad 2012 through processes such as thermo-press bonding, ultrasonic bonding, or thermo-ultrasonic bonding.

[0033] A portion of the second metal electrode 2044 is disposed within the via TH and electrically connected to the bonding metal pad 2012. The via TH is located on the side of the bonding via BH closest to the display area AA. The distance between the center line L2 of the via TH and the center line L3 of the bonding via BH is 10 micrometers to 200 micrometers. This distance ensures sufficient spacing between the via TH and the bonding via BH to avoid mutual interference.

[0034] The dimensions of the bonding vias BH vary across different layers. The dimension of the bonding via BH at the bottom of the planarization layer 2013 is smaller than that at the top of the planarization layer 2013, creating a stepped or sloping sidewall profile. The dimension of the bonding via BH at the bottom of the planarization layer 2013 is smaller than the dimension of the portion of the bonding via BH in the first interlayer insulating layer 2041 and smaller than the dimension of the portion of the bonding via BH in the second interlayer insulating layer 2043. This allows the planarization layer 2013 to isolate the residual metal portion 2045 and the bonded metal pad 2012, achieving effective physical and electrical isolation. Preferably, the dimension of the bonding via BH at the bottom of the planarization layer 2013 is less than or equal to half the dimension of the portion of the bonding via BH in the first interlayer insulating layer 2041, maximizing the isolation effect.

[0035] During the manufacturing process of the second interlayer insulating layer 2043, due to the characteristics of the organic resin material, undercut portions are formed in the bonding hole BH region after exposure and development processes. Undercut portions refer to the recessed areas formed by the organic resin material on the sidewalls at the edges of the bonding holes BH. The depth of the undercut portions is typically 0.5 to 3 micrometers, and the width is 1 to 5 micrometers. This morphology is caused by uneven material thickness and inconsistent curing levels. When the organic resin material is thicker, the bottom material receives insufficient exposure dose and cannot be completely cured. During development, it is dissolved by the developer, thus forming the undercut portion.

[0036] In the embodiments of this application, the residual metal portion 2045 located within the undercut portion of the bonding via BH is disposed on the planarization layer 2013 and does not contact the bonding metal pad 2012. These residual metal portions 2045 are metal materials that entered the undercut portion during the formation of the second metal electrode 2044. Due to the special position and shape of the undercut portion, conventional etching processes cannot completely remove the residual metal portions 2045. The residual metal portion 2045 and the bonding metal pad 2012 located in the source / drain metal layer are physically and electrically isolated by the planarization layer 2013, preventing short circuits.

[0037] The bonding via BH, located at the bottom of the planarization layer 2013, has a larger dimension than the via TH, which is also located at the bottom of the planarization layer 2013. The bonding via BH needs to provide sufficient space for driving the bonding operation of the chip pins, while the via TH is mainly used for electrical connections, and its relatively smaller size is sufficient.

[0038] The coverage area of ​​the second metal electrode 2044 in the peripheral region BA is located outside the opening area of ​​the bonding hole BH. By limiting the coverage area of ​​the second metal electrode 2044, it is prevented from extending into the bonding hole BH area. The edge line L1 of the second metal electrode 2044 is located between the center line L2 of the via TH and the center line L3 of the bonding hole BH. In the portion of the second metal electrode 2044 located in the peripheral region BA, the removed portion of the second metal electrode 2044 is located on the side of the edge line L1 away from the display area AA, forming a blank area corresponding to the bonding hole BH. The area of ​​this blank area is typically 1.2 to 2 times the opening area of ​​the bonding hole BH to ensure sufficient safety margin.

[0039] In the peripheral region BA, the distance D1 from the edge line L1 of the second metal electrode 2044 to the edge line L5 of the bonding hole BH located in the second interlayer insulating layer 2043 is greater than or equal to 0, and less than the distance D2 from the edge line L1 of the second metal electrode 2044 to the edge line L4 of the bonding hole BH located at the bottom of the planarization layer 2013. The distance D1 from the edge line L1 of the second metal electrode 2044 to the edge line L5 of the bonding hole BH located in the second interlayer insulating layer 2043 is 0 to 50 micrometers. This distance setting ensures that the second metal electrode 2044 will not come into contact with the undercut portion of the bonding hole BH region.

[0040] In the peripheral region BA, the edge line L1 of the second metal electrode 2044 is straight and parallel to the edge of the display region AA. The edge line L1 of the second metal electrode 2044 is also straight and parallel to the edge line L5 of the portion of the bonding hole BH located in the second interlayer insulating layer 2043. Multiple vias TH are arranged along the edge line L5 of the portion of the bonding hole BH located in the second interlayer insulating layer 2043. The distance D1 from the edge line L1 of the second metal electrode 2044 to the edge line L5 of the portion of the bonding hole BH located in the second interlayer insulating layer 2043 is greater than or equal to the diameter D3 of the smallest circumscribed circle of the via TH. This distance ensures that the via TH is completely within the coverage area of ​​the second metal electrode 2044, while preventing the second metal electrode 2044 from extending into the bonding hole BH region. This ensures both the reliability of the electrical connection and avoids the risk of short circuits due to residual metal in the undercut portion.

[0041] The residual metal portion 2045 located within the undercut of the bonding via BH is not in contact with the second metal electrode 2044. Since the coverage area of ​​the second metal electrode 2044 is confined outside the opening region of the bonding via BH, physical and electrical isolation is formed between the residual metal portion 2045 and the second metal electrode 2044, preventing short circuits. The portion of the second metal electrode 2044 in the peripheral region BA is electrically isolated from the residual metal portion 2045 located within the undercut of the bonding via BH. The portion of the second metal electrode 2044 within the via TH is etched away from the portion outside the via TH, ensuring that the presence of the residual metal portion 2045 does not affect the normal function of the second metal electrode 2044.

[0042] like Figure 3 As shown, this application also provides a method for manufacturing a touch display device, the method comprising the following steps: Step 1: Fabrication of the first interlayer insulating layer (IL1) 2041. This step involves forming the first interlayer insulating layer 2041 on the portion of the planarization layer 2013 located in the peripheral region BA of the thin-film transistor array substrate 201. The specific process includes four steps: deposition, photolithography, dry etching, and stripping. In the deposition step, an insulating material such as silicon nitride or silicon oxide is deposited on the surface of the planarization layer 2013 using plasma-enhanced chemical vapor deposition. In the photolithography step, patterning is performed using photoresist and a first photomask (Mask1). In the dry etching step, unwanted insulating material is removed using reactive ion etching, while simultaneously forming vias TH located on the portion of the planarization layer 2013 and the first interlayer insulating layer 2041, and bonding vias BH located on the portion of the planarization layer 2013 and the first interlayer insulating layer 2041. In the stripping step, residual photoresist is removed using oxygen plasma or an organic solvent.

[0043] Step 2: Fabrication of the first metal electrode 2042. This step involves forming the first metal electrode 2042 on the first interlayer insulating layer 2041. The specific process includes four steps: deposition, photolithography, dry etching, and stripping. In the deposition step, a transparent conductive material, such as indium tin oxide or indium zinc oxide, is deposited on the surface of the first interlayer insulating layer 2041 using a sputtering process. In the photolithography step, a pattern for the first metal electrode 2042 is formed using photoresist and a second photomask (Mask 2). The photomask pattern uses geometric shapes such as stripes or rhombuses to achieve touch-sensing functionality. In the dry etching step, unwanted metal material is removed using chlorine-based plasma. In the stripping step, remaining photoresist is removed.

[0044] Step 3: Fabrication of the second interlayer insulating layer (IL2) 2043. This step involves forming the second interlayer insulating layer 2043 on the first interlayer insulating layer 2041. The specific process includes two steps: photolithography and baking. In the photolithography step, organic resin material is applied to the surface of the first interlayer insulating layer 2041 using a spin-coating process, and then exposed using a third photomask (Mask3). The photolithography step also forms the portions of the through-hole TH and the bonding via BH located in the second interlayer insulating layer 2043. The two sub-holes of the through-hole TH are interconnected to form the complete through-hole TH, and the two sub-holes of the bonding via BH are interconnected to form the complete bonding via BH. In the baking step, the exposed organic resin material is heat-treated to complete the curing process.

[0045] Step 4: Fabrication of the second metal electrode 2044. This step is performed after step 3 to ensure that the via TH and bonding via BH have been formed. This step involves forming the second metal electrode 2044 on the second interlayer insulating layer 2043. The specific process includes five steps: pre-cleaning, deposition, photolithography, dry etching, and stripping. In the pre-cleaning step, oxygen plasma or diluted hydrofluoric acid solution is used to remove organic residues and oxides from the surface of the second interlayer insulating layer 2043. In the deposition step, a metal material, such as aluminum, copper, or molybdenum, is deposited on the surface of the second interlayer insulating layer 2043 using a sputtering process. The metal material is also deposited into the via TH and contacts the bonding metal pad 2012. In the photolithography step, a specially designed fourth photomask (Mask4) is used to form the pattern of the second metal electrode 2044. This photomask is adjusted to control the coverage area of ​​the second metal electrode 2044, ensuring that the coverage area of ​​the second metal electrode 2044 in the peripheral region BA is outside the opening area of ​​the bonding via BH. In the dry etching step, chlorine-based or fluorine-based plasma is used to remove unwanted metal material, and the portion of the second metal electrode 2044 located on the side of the via TH away from the display area AA is removed by the etching process. In the stripping step, the remaining photoresist is removed. A portion of the second metal electrode 2044 is disposed within the via TH and electrically connected to the bonding metal pad 2012, and the portion of the second metal electrode 2044 located on the side of the via TH away from the display area AA is removed.

[0046] Step 5: Fabrication of the Protective Layer (PAS) (not shown in the figure). This step includes three steps: photolithography, baking, and dry etching. In the photolithography step, photoresist and the fifth photomask (Mask 5) are used to form the areas requiring further etching, mainly targeting the bonding via BH area. In the baking step, the photoresist is heat-treated to improve its etching resistance. In the dry etching step, the portions of the planarization layer 2013 and the first interlayer insulating layer 2041 located within the bonding via BH are further etched to form the specific contour of the portion of the bonding via BH located within the planarization layer 2013 and the first interlayer insulating layer 2041 as described in the technical features of this application. This further etching can form more pronounced stepped or sloping sidewalls, enhancing the isolation effect on the residual metal portion 2045.

[0047] In the fourth step, the portion of the second metal electrode 2044 located on the side of the via TH away from the display area AA is selectively removed. This selective removal step is achieved by adjusting the fourth photomask Mask4 so that the edge line L1 of the second metal electrode 2044 is located between the center line L2 of the via TH and the center line L3 of the bonding hole BH.

[0048] The above manufacturing method can effectively control the coverage area of ​​the second metal electrode 2044, preventing it from extending into the bonding hole BH region, thereby preventing short circuit problems.

[0049] The touch display device of this application effectively solves the short circuit problem caused by the connection between the second metal electrode 2044 and the residual metal portion 2045 of the undercut section in the conventional technology through the above-described technical solution. The limited coverage area of ​​the second metal electrode 2044 ensures the normal operation of the circuit while maintaining good touch performance and display effect.

[0050] The touch display device provided in this application effectively solves the technical problem of short circuits in touch display devices by limiting the coverage area of ​​the second metal electrode 2044 in the peripheral region BA to outside the opening area of ​​the bonding hole BH. Specifically, the technical solution of this application controls the coverage area of ​​the second metal electrode 2044 so that the second metal electrode 2044 does not extend into the opening area of ​​the bonding hole BH. When the second interlayer insulating layer 2043 is made of organic resin material, due to the height difference between the display area AA and the peripheral region BA and the leveling characteristics of the organic resin material, the organic resin material in the peripheral region BA will accumulate to a thicker thickness. During the exposure and development process, the organic resin material at the bottom of the peripheral region BA cannot be completely cured and is dissolved by the developer, forming undercut portions. The second metal electrode 2044 will enter these undercut portions during the deposition process. Due to the special position and shape of the undercut portions, the second metal electrode 2044 located in the undercut portions cannot be effectively removed by conventional etching processes, thus forming residual metal portions 2045. This application limits the coverage area of ​​the second metal electrode 2044 to outside the opening region of the bonding hole BH. Thus, even if a small amount of residual metal 2045 remains in the undercut of the second interlayer insulating layer 2043, since the second metal electrode 2044 itself does not extend into the bonding hole BH region, these residual metal 2045 have no electrical connection with the second metal electrode 2044, and therefore will not cause a short circuit in the second metal electrode 2044. Simultaneously, by rationally configuring the position of the via TH, placing the via TH on the side of the bonding hole BH closer to the display area AA, it ensures that the second metal electrode 2044 can achieve a reliable electrical connection with the bonding metal pad 2012 through the via TH, meeting the electrical connection requirements while avoiding short circuit problems.

[0051] The embodiments of this application have been described in detail above. The content of this specification should not be construed as limiting the scope of protection of this application.

Claims

1. A touch display device, characterized in that, The touch display device includes: Thin-film transistor array substrate; A light-emitting device layer is disposed on the thin-film transistor array substrate; An encapsulation layer is disposed on the light-emitting device layer; and A touch device is disposed on the encapsulation layer. The touch device includes a first interlayer insulating layer, a first metal electrode disposed on the first interlayer insulating layer, a second interlayer insulating layer disposed on the first interlayer insulating layer, and a second metal electrode disposed on the second interlayer insulating layer. The touch display device includes a display area and a peripheral area located on at least one side of the display area. The peripheral area is provided with a through hole and a bonding hole. Both the through hole and the bonding hole penetrate the second interlayer insulating layer, the first interlayer insulating layer, and the planarization layer of the thin-film transistor array substrate. Both the through hole and the bonding hole expose the bonding metal pad of the thin-film transistor array substrate. A portion of the second metal electrode is disposed in the through hole and electrically connected to the bonding metal pad. The through hole is located on the side of the bonding hole closer to the display area. The coverage area of ​​the second metal electrode in the peripheral area is outside the opening area of ​​the bonding hole.

2. The touch display device according to claim 1, characterized in that, The edge line of the second metal electrode is located between the center line of the through hole and the center line of the bonding hole.

3. The touch display device according to claim 2, characterized in that, In the peripheral region, the distance from the edge line of the second metal electrode to the edge line of the bonding hole located in the portion of the second interlayer insulating layer is greater than or equal to 0, and less than the distance from the edge line of the second metal electrode to the edge line of the bonding hole located at the bottom of the planarization layer.

4. The touch display device according to claim 1, characterized in that, In the peripheral region, the edge line of the second metal electrode is straight and parallel to the edge line of the portion of the bonding hole located in the second interlayer insulating layer.

5. The touch display device according to claim 1, characterized in that, The size of the bonding hole at the bottom of the planarization layer is smaller than the size of the portion of the bonding hole located in the first interlayer insulating layer and smaller than the size of the portion of the bonding hole located in the second interlayer insulating layer.

6. The touch display device according to claim 5, characterized in that, The size of the bonding hole located at the bottom of the planarization layer is less than or equal to half the size of the portion of the bonding hole located in the first interlayer insulating layer.

7. The touch display device according to claim 5, characterized in that, The residual metal portion located in the undercut of the bonding hole is disposed on the planarization layer and does not contact the bonding metal pad.

8. The touch display device according to claim 1, characterized in that, The residual metal portion located in the undercut of the bonding hole does not contact the second metal electrode.

9. The touch display device according to claim 1, characterized in that, The distance from the edge line of the second metal electrode to the edge line of the portion of the bonding hole located in the second interlayer insulating layer is greater than or equal to the diameter of the smallest circumscribed circle of the through hole.

10. The touch display device according to claim 1, characterized in that, The bonding hole located at the bottom of the planarization layer has a larger dimension than the through hole located at the bottom of the planarization layer.

Images