Semiconductor device and method of manufacturing the same

Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a gate stack structure including a plurality of interlayer insulating layers and a plurality of conductive layers alternately stacked in a third direction; a channel plug formed in the cell region, the channel plug penetrating the gate stack structure in a third direction; and at least one support structure formed in the contact region, the at least one support structure penetrating the gate stack structure in the third direction. The support structure includes a plurality of support structure layers sequentially stacked in a third direction, the plurality of support structure layers being sequentially disposed such that each of the plurality of support structure layers extends in a different direction along a plane defined by the first direction and the second direction, the first direction, the second direction, and the third direction being orthogonal to each other.

Images