Plasma processing method and apparatus

Abstract

An embodiment plasma processing apparatus includes: a plasma generating source; a nozzle in the plasma chamber capable of directing a plasma from the plasma generating source to the wafer to be processed, the plasma having the form of a plasma beam at the outlet of the nozzle; an outer ring disposed in the plasma chamber and over the wafer, the outer ring surrounding the nozzle; the gas exhaust port is arranged between the inner side wall of the outer ring body and the outer side wall of the nozzle; and a first vacuum pump connected to the gas discharge port between the inner side wall of the outer ring body and the outer side wall of the nozzle.

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