A method and system for temperature control in semiconductor substrate polishing

Abstract

This invention discloses a temperature control method and system for semiconductor substrate polishing, relating to the semiconductor field. It solves the problem of poor temperature control in existing temperature control methods. The method includes the following steps: Step S1: Periodically monitoring the polishing pressure of the target semiconductor substrate during the polishing monitoring cycle; matching the polishing pressure consistency between the target single-conductor substrate and historical single-conductor substrates based on the monitoring results to obtain substrate pressure matching data; Step S2: Periodically monitoring the polishing rotation speed of the target single-conductor substrate during the polishing monitoring cycle; matching the polishing rotation speed consistency between the target single-conductor substrate and semiconductor substrates with consistent pressure based on the monitoring results to obtain substrate processing matching data; Step S3: Real-time monitoring of the polishing temperature of the target semiconductor substrate based on the substrate processing matching data; and controlling the polishing temperature based on the monitoring results. This invention improves the accuracy of the temperature control process.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor materials and relates to sensor technology, specifically a method and system for temperature control during semiconductor substrate polishing. Background Technology

[0002] Existing temperature control methods have the following specific drawbacks when controlling the polishing temperature of semiconductor substrates: 1. Existing temperature control methods cannot match the polishing pressure and the rotation speed of the polishing equipment between historical single-conductor substrates and target semiconductor substrates when controlling the polishing temperature of the target semiconductor substrate. As a result, they cannot combine historical polishing data to monitor the polishing temperature of the semiconductor substrate, which leads to a lack of accuracy in the temperature control process. 2. Existing temperature control methods cannot obtain multiple polishing sample substrates by monitoring polishing pressure and polishing speed when controlling the polishing temperature of the target semiconductor substrate. They cannot set a temperature adjustment reference range by using the historical processing temperature of the polishing sample substrates to adjust the processing temperature of the target semiconductor substrate in real time. They cannot avoid lattice defects or polishing fluid failure caused by thermal stress, which is not conducive to improving the stability of the polishing process.

[0003] Therefore, we propose a temperature control method and system for semiconductor substrate polishing. Summary of the Invention

[0004] In view of the shortcomings of the existing technology, the purpose of this invention is to provide a temperature control method and system for semiconductor substrate polishing, which aims to improve the stability and accuracy of polishing temperature regulation.

[0005] To achieve the above objectives, the present invention employs the following technical solution: a temperature control method for polishing a semiconductor substrate, comprising the following specific steps: Step S1: Periodically monitor the polishing pressure of the target single conductor substrate during the polishing monitoring cycle. Set a substrate polishing pressure matching interval based on the monitoring results. Match the polishing pressure of the target single conductor substrate with that of the historical single conductor substrate according to the substrate polishing pressure matching interval to obtain substrate pressure matching data. Step S2: Periodically monitor the polishing speed of the target single conductor substrate during the polishing monitoring cycle. Set a substrate polishing speed matching range based on the monitoring results. Match the polishing speed of the target single conductor substrate with the semiconductor substrate with the same pressure according to the substrate pressure matching data to obtain substrate processing matching data. Step S3: Monitor the polishing temperature of the target semiconductor substrate in real time based on the substrate processing matching data, and control the polishing temperature based on the monitoring results.

[0006] Furthermore, step S1 also includes the following specific steps: Step S11: Obtain semiconductor substrates in the polishing workshop to obtain multiple semiconductor substrates, and arbitrarily select one target semiconductor substrate from the multiple semiconductor substrates obtained; Step S12: During the polishing pressure monitoring of the target semiconductor substrate, the time point at which the polishing of the target semiconductor substrate begins is marked as the first pressure monitoring characteristic time point, the time point corresponding to the current moment is marked as the second pressure monitoring characteristic time point, and the time period between the first pressure monitoring characteristic time point and the second pressure monitoring characteristic time point is marked as the substrate polishing pressure monitoring cycle. Step S13: Perform periodic polishing pressure monitoring on the target semiconductor substrate during the substrate polishing pressure monitoring cycle, and obtain the periodic polishing pressure index value corresponding to the target semiconductor substrate based on the monitoring results; Step S14: Set a substrate polishing pressure matching interval by using the periodic polishing pressure index value as the intermediate value of the interval, obtain several historical semiconductor substrates that have been polished, obtain the periodic polishing pressure index value corresponding to each historical semiconductor substrate, and mark the historical semiconductor substrates whose periodic polishing pressure index value is in the substrate polishing pressure matching interval as pressure-consistent semiconductor substrates, thus obtaining multiple pressure-consistent semiconductor substrates. Step S15: Define the resulting multiple pressure-matched semiconductor substrates as substrate pressure matching data.

[0007] Furthermore, step S13 also includes the following specific steps: Step S131: Divide the substrate polishing pressure monitoring cycle into several pressure monitoring periods of equal duration, and arbitrarily select one sample pressure monitoring period from the multiple pressure monitoring periods obtained; Step S132: Perform polishing pressure monitoring on the target semiconductor substrate during the sample pressure monitoring period to obtain the polishing pressure monitoring value corresponding to the sample pressure monitoring period. Step S133: Repeat the process of obtaining the polishing pressure monitoring values ​​for the corresponding time period of the sample pressure monitoring period, and obtain the polishing pressure monitoring values ​​for each pressure monitoring period to obtain multiple polishing pressure monitoring values ​​for each time period. Step S134: Compare the values ​​of the polishing pressure monitoring data obtained in multiple time periods, mark the polishing pressure monitoring data of the time period with the largest value as the first cycle pressure monitoring value, mark the polishing pressure monitoring data of the time period with the smallest value as the second cycle pressure monitoring value, and mark the range of values ​​between the first cycle pressure monitoring value and the second cycle pressure monitoring value as the cycle polishing pressure value interval. Step S135: Divide the periodic polishing pressure value range into several pressure value sub-ranges, and mark the multiple pressure value sub-ranges obtained in chronological order as Y1 pressure value sub-range to Ya pressure value sub-range. Step S136: Obtain the midpoint values ​​of the intervals corresponding to the sub-intervals of pressure values ​​from Y1 to Ya, and obtain the midpoint values ​​of the pressure intervals from Y1 to Ya. Step S137: Accumulate the duration of pressure monitoring periods where the polishing pressure monitoring value is in the Y1 pressure value sub-interval to obtain the pressure duration of the Y1 interval; accumulate the duration of pressure monitoring periods where the polishing pressure monitoring value is in the Y2 pressure value sub-interval to obtain the pressure duration of the Y2 interval; and so on, accumulate the duration of pressure monitoring periods where the polishing pressure monitoring value is in the Ya pressure value sub-interval to obtain the pressure duration of the Ya interval. Step S138: Calculate the periodic polishing pressure index value by taking the midpoint of the Y1 pressure range to the midpoint of the Ya pressure range and the duration of the Y1 pressure range to the duration of the Ya pressure range. The formula for calculating the periodic polishing pressure index is as follows: ; Where Zyz is the periodic polishing pressure index value, Yzzi is the median value of the Yi pressure range, Ysci is the duration of the pressure in the Yi range, and a is the quantity value corresponding to the sub-range of pressure values.

[0008] Furthermore, step S132 also includes the following specific steps: Several pressure monitoring time points were selected during the sample pressure monitoring period. The polishing pressure value applied by the polishing equipment at each pressure monitoring time point was obtained, resulting in multiple polishing pressure values. The average value of the polishing pressure values ​​was then calculated to obtain the average polishing pressure value for the period. The difference between each polishing pressure value and the average polishing pressure over a period of time is obtained, and the absolute value of the difference is taken to obtain the polishing pressure deviation corresponding to each pressure monitoring time point. The polishing pressure deviation threshold is compared numerically, and the pressure monitoring time points with polishing pressure deviation less than the polishing pressure deviation threshold are marked as valid pressure monitoring time points. The polishing pressure value corresponding to each effective pressure monitoring time point is obtained, and the average value is calculated to obtain the polishing pressure monitoring value for the time period.

[0009] Furthermore, step S2 also includes the following specific steps: Step S21: During the polishing speed monitoring of the target semiconductor substrate, the time point at which the polishing of the target semiconductor substrate begins is marked as the first speed monitoring characteristic time point, the time point corresponding to the current moment is marked as the second speed monitoring characteristic time point, and the time period between the first speed monitoring characteristic time point and the second speed monitoring characteristic time point is marked as the substrate polishing speed monitoring cycle. Step S22: Periodically monitor the polishing speed of the target semiconductor substrate during the substrate polishing speed monitoring cycle, and obtain the periodic polishing speed index value corresponding to the target semiconductor substrate based on the monitoring results; Step S23: Set a substrate polishing speed matching range by using the periodic polishing speed index value as the midpoint of the range; Step S24: Obtain substrate pressure matching data. Based on the substrate pressure matching data, obtain multiple semiconductor substrates with consistent pressure. Obtain the periodic polishing speed index value corresponding to each semiconductor substrate with consistent pressure. Mark the semiconductor substrates with consistent pressure whose periodic polishing speed index value is in the substrate polishing speed matching range as polishing sample substrates. Obtain multiple polishing sample substrates and define the obtained multiple polishing sample substrates as substrate processing matching data.

[0010] Furthermore, step S22 also includes the following specific steps: Step S221: Divide the substrate polishing speed monitoring cycle into several speed monitoring periods of equal duration, and arbitrarily select one sample speed monitoring period from the multiple speed monitoring periods obtained; Step S222: Monitor the polishing speed of the target semiconductor substrate during the sample speed monitoring period to obtain the polishing speed monitoring value corresponding to the sample speed monitoring period; Step S223: Repeat the process of obtaining the polishing speed monitoring value corresponding to the time period of the sample speed monitoring period, and obtain the polishing speed monitoring value corresponding to each speed monitoring period to obtain multiple time period polishing speed monitoring values; Step S224: Obtain the Z1 speed value sub-interval to the Zb speed value sub-interval by analyzing the polishing speed monitoring values ​​of multiple time periods; Step S225: Obtain the midpoint values ​​of the intervals corresponding to the Z1 speed value sub-interval to the Zb speed value sub-interval respectively, to obtain the midpoint values ​​of the Z1 speed interval to the Zb speed interval. Step S226: Accumulate the duration of the speed monitoring period when the polishing speed monitoring value is in the Z1 speed value sub-interval to obtain the speed duration of the Z1 interval. Accumulate the duration of the speed monitoring period when the polishing speed monitoring value is in the Z2 speed value sub-interval to obtain the speed duration of the Z2 interval. And so on, accumulate the duration of the speed monitoring period when the polishing speed monitoring value is in the Zb speed value sub-interval to obtain the speed duration of the Zb interval. Step S227: Calculate the periodic polishing speed index value by taking the midpoint value of the Z1 speed range to the midpoint value of the Zb speed range and the duration of the Z1 speed range to the duration of the Zb speed range. The specific formula for calculating the periodic polishing rotation speed is as follows: ; Where Zyy is the periodic polishing speed index value, Zzzj is the median value of the Zj speed range, Zscj is the duration of the speed range in the Zi range, and b is the quantity value corresponding to the sub-range of speed values.

[0011] Furthermore, step S222 also includes the following specific steps: Several speed monitoring time points were selected during the sample speed monitoring period. The polishing speed value of the polishing equipment at each speed monitoring time point was obtained, resulting in multiple polishing speed values. The average value of the polishing speed values ​​was calculated to obtain the average polishing speed value for the time period. The difference between each polishing speed value and the average polishing speed of the time period is obtained, and the absolute value of the obtained difference is taken to obtain the polishing speed deviation corresponding to each speed monitoring time point. The polishing speed deviation threshold is compared numerically, and the speed monitoring time points with polishing speed deviation less than the polishing speed deviation threshold are marked as valid speed monitoring time points. The polishing speed value corresponding to each effective speed monitoring time point is obtained, and the average value is calculated to obtain the polishing speed monitoring value for the time period.

[0012] Furthermore, step S224 also includes the following specific steps: The polishing speed monitoring values ​​obtained from multiple time periods are compared. The polishing speed monitoring value of the time period with the largest value is marked as the first cycle speed monitoring value, and the polishing speed monitoring value of the time period with the smallest value is marked as the second cycle speed monitoring value. The range of values ​​between the first cycle speed monitoring value and the second cycle speed monitoring value is marked as the cycle polishing speed value interval. The periodic polishing speed range is divided into several sub-ranges, and the obtained sub-ranges are labeled as Z1 to Zb in chronological order.

[0013] Furthermore, step S24 also includes the following specific steps: Acquire substrate processing matching data, and obtain multiple polished sample substrates based on the substrate processing matching data; The polishing temperature of the target semiconductor substrate at the current moment is obtained to obtain the real-time polishing temperature of the target. Obtain the time distance between the current moment and the start time of polishing to get the characteristic polishing duration; The polishing temperature value of each polishing sample substrate is obtained at the time after the polishing characteristic polishing time, resulting in multiple sample polishing temperature values. The multiple sample polishing temperature values ​​are compared, and the sample polishing temperature value with the largest value is marked as the first polishing reference temperature value, and the sample polishing temperature value with the smallest value is marked as the second polishing reference temperature value. The temperature range between the first polishing reference temperature value and the second polishing reference temperature value is marked as the temperature adjustment reference range. If the target real-time polishing temperature is greater than the first polishing reference temperature, then reduce the polishing temperature of the target semiconductor substrate until the target real-time polishing temperature is within the temperature adjustment reference range. If the target real-time polishing temperature is lower than the second polishing reference temperature, the polishing temperature of the target semiconductor substrate is increased until the target real-time polishing temperature is within the temperature adjustment reference range.

[0014] A temperature control system for polishing a semiconductor substrate includes: Polishing pressure module: Periodically monitors the polishing pressure of the target semiconductor substrate during the polishing monitoring cycle, sets a substrate polishing pressure matching range based on the monitoring results, and matches the polishing pressure of the target semiconductor substrate with that of the historical semiconductor substrate according to the substrate polishing pressure matching range to obtain substrate pressure matching data; Polishing speed module: Periodically monitors the polishing speed of the target semiconductor substrate during the polishing monitoring cycle, sets a substrate polishing speed matching range based on the monitoring results, and performs polishing speed consistency matching between the target semiconductor substrate and the semiconductor substrate with the same pressure according to the substrate pressure matching data to obtain substrate processing matching data; Temperature control module: Real-time polishing temperature monitoring of the target semiconductor substrate based on substrate processing matching data, and polishing temperature control based on the monitoring results.

[0015] In summary, due to the adoption of the above technical solution, the beneficial effects of the present invention are: 1. In the present invention, when controlling the polishing temperature of the target semiconductor substrate, the polishing pressure of the historical semiconductor substrate and the rotation speed of the polishing equipment are matched periodically, and the polishing temperature of the semiconductor substrate is monitored in combination with historical polishing data, which can improve the accuracy of the temperature control process. 2. When controlling the polishing temperature of the target semiconductor substrate, this invention obtains multiple polishing sample substrates by monitoring polishing pressure and polishing speed. Based on the historical processing temperature of the polishing sample substrates, a temperature adjustment reference range is set to adjust the processing temperature of the target semiconductor substrate in real time. This can avoid lattice defects or polishing fluid failure caused by thermal stress, thereby improving the stability of the polishing process. Attached Figure Description

[0016] To facilitate understanding by those skilled in the art, the present invention will be further described below with reference to the accompanying drawings.

[0017] Figure 1 This is a diagram illustrating the implementation steps of the present invention; Figure 2 This is a system block diagram of the present invention. Detailed Implementation

[0018] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0019] Example 1 Please see Figure 1 The pressure monitoring device of this invention is an intelligent sensor. A technical solution is provided: a temperature control method for semiconductor substrate polishing, comprising the following specific steps: Step S1: Periodically monitor the polishing pressure of the target semiconductor substrate during the polishing monitoring cycle. Set a substrate polishing pressure matching range based on the monitoring results. Match the polishing pressure of the target semiconductor substrate with that of the historical semiconductor substrate according to the substrate polishing pressure matching range to obtain substrate pressure matching data. Step S1 further includes the following specific steps: Step S11: Obtain semiconductor substrates in the polishing workshop to obtain multiple semiconductor substrates, and arbitrarily select one target semiconductor substrate from the multiple semiconductor substrates obtained; Step S12: During the polishing pressure monitoring of the target semiconductor substrate, the time point at which the polishing of the target semiconductor substrate begins is marked as the first pressure monitoring characteristic time point, the time point corresponding to the current moment is marked as the second pressure monitoring characteristic time point, and the time period between the first pressure monitoring characteristic time point and the second pressure monitoring characteristic time point is marked as the substrate polishing pressure monitoring cycle. Step S13: Perform periodic polishing pressure monitoring on the target semiconductor substrate during the substrate polishing pressure monitoring cycle, and obtain the periodic polishing pressure index value corresponding to the target semiconductor substrate based on the monitoring results; Step S13 further includes the following specific steps: Step S131: Divide the substrate polishing pressure monitoring cycle into several pressure monitoring periods of equal duration, and arbitrarily select one sample pressure monitoring period from the multiple pressure monitoring periods obtained; Step S132: Perform polishing pressure monitoring on the target semiconductor substrate during the sample pressure monitoring period to obtain the polishing pressure monitoring value corresponding to the sample pressure monitoring period. Step S132 further includes the following specific steps: Several pressure monitoring time points were selected during the sample pressure monitoring period. The polishing pressure value applied by the polishing equipment at each pressure monitoring time point was obtained, resulting in multiple polishing pressure values. The average value of the polishing pressure values ​​was then calculated to obtain the average polishing pressure value for the period. The difference between each polishing pressure value and the average polishing pressure over a period of time is obtained, and the absolute value of the difference is taken to obtain the polishing pressure deviation corresponding to each pressure monitoring time point. The polishing pressure deviation threshold is compared numerically, and the pressure monitoring time points with polishing pressure deviation less than the polishing pressure deviation threshold are marked as valid pressure monitoring time points. The polishing pressure value corresponding to each effective pressure monitoring time point is obtained, and the average value is calculated to obtain the polishing pressure monitoring value for the time period. Step S133: Repeat the process of obtaining the polishing pressure monitoring values ​​for the corresponding time period of the sample pressure monitoring period, and obtain the polishing pressure monitoring values ​​for each pressure monitoring period to obtain multiple polishing pressure monitoring values ​​for each time period. It should be noted here that: The benefits of this step are: 1. The periodic polishing pressure value range is divided into multiple pressure value sub-ranges, and the median value of each sub-range (from the median value of pressure range Y1 to the median value of pressure range Ya) is obtained. These median values ​​represent the typical pressure levels of different pressure ranges, which can intuitively show the distribution of polishing pressure in each range. At the same time, the duration of the pressure monitoring period in each pressure value sub-range is statistically analyzed to obtain the pressure duration of each range (the pressure duration of range Y1 to the pressure duration of range Ya), which clearly reflects the duration of action of different pressure levels in the polishing process. 2. The calculation formula for the periodic polishing pressure index (Zyz) cleverly combines the median value of each pressure range with the corresponding pressure duration. This combination method breaks through the limitations of single-parameter analysis, integrating the pressure distribution characteristics (pressure level) and the action time characteristics (duration) into a comprehensive index. It can comprehensively and accurately depict the overall pressure changes during the polishing process, providing a rich and crucial information foundation for subsequent in-depth evaluation and optimization of the polishing process. 3. The periodic polishing pressure index transforms complex information such as polishing pressure distribution and duration into a single, intuitive value. During production, workers no longer need to sift through numerous scattered pressure and duration data to find key information; they can quickly assess the pressure during polishing by focusing on this index, greatly simplifying the polishing quality evaluation process and improving work efficiency.

[0020] Step S134: Compare the values ​​of the polishing pressure monitoring data obtained in multiple time periods, mark the polishing pressure monitoring data of the time period with the largest value as the first cycle pressure monitoring value, mark the polishing pressure monitoring data of the time period with the smallest value as the second cycle pressure monitoring value, and mark the range of values ​​between the first cycle pressure monitoring value and the second cycle pressure monitoring value as the cycle polishing pressure value interval. Step S135: Divide the periodic polishing pressure value range into several pressure value sub-ranges, and mark the multiple pressure value sub-ranges obtained in chronological order as Y1 pressure value sub-range to Ya pressure value sub-range. Step S136: Obtain the midpoint values ​​of the intervals corresponding to the sub-intervals of pressure values ​​from Y1 to Ya, and obtain the midpoint values ​​of the pressure intervals from Y1 to Ya. Step S137: Accumulate the duration of pressure monitoring periods where the polishing pressure monitoring value is in the Y1 pressure value sub-interval to obtain the pressure duration of the Y1 interval; accumulate the duration of pressure monitoring periods where the polishing pressure monitoring value is in the Y2 pressure value sub-interval to obtain the pressure duration of the Y2 interval; and so on, accumulate the duration of pressure monitoring periods where the polishing pressure monitoring value is in the Ya pressure value sub-interval to obtain the pressure duration of the Ya interval. Step S138: Calculate the periodic polishing pressure index value by taking the midpoint of the Y1 pressure range to the midpoint of the Ya pressure range and the duration of the Y1 pressure range to the duration of the Ya pressure range. The formula for calculating the periodic polishing pressure index is as follows: ; Where Zyz is the periodic polishing pressure index value, Yzzi is the median value of the Yi pressure range, Ysci is the duration of the Yi pressure range, and a is the quantity value corresponding to the sub-range of pressure values. Step S14: Set a substrate polishing pressure matching interval by using the periodic polishing pressure index value as the intermediate value of the interval, obtain several historical semiconductor substrates that have been polished, obtain the periodic polishing pressure index value corresponding to each historical semiconductor substrate, and mark the historical semiconductor substrates whose periodic polishing pressure index value is in the substrate polishing pressure matching interval as pressure-consistent semiconductor substrates, thus obtaining multiple pressure-consistent semiconductor substrates. Step S15: Define the resulting multiple pressure-matched semiconductor substrates as substrate pressure matching data.

[0021] Step S2: Periodically monitor the polishing speed of the target semiconductor substrate during the polishing monitoring cycle, set a substrate polishing speed matching range based on the monitoring results, and perform polishing speed consistency matching between the target semiconductor substrate and the semiconductor substrate with consistent pressure according to the substrate pressure matching data to obtain substrate processing matching data; Step S2 further includes the following specific steps: Step S21: During the polishing speed monitoring of the target semiconductor substrate, the time point at which the polishing of the target semiconductor substrate begins is marked as the first speed monitoring characteristic time point, the time point corresponding to the current moment is marked as the second speed monitoring characteristic time point, and the time period between the first speed monitoring characteristic time point and the second speed monitoring characteristic time point is marked as the substrate polishing speed monitoring cycle. Step S22: Periodically monitor the polishing speed of the target semiconductor substrate during the substrate polishing speed monitoring cycle, and obtain the periodic polishing speed index value corresponding to the target semiconductor substrate based on the monitoring results; Step S22 further includes the following specific steps: Step S221: Divide the substrate polishing speed monitoring cycle into several speed monitoring periods of equal duration, and arbitrarily select one sample speed monitoring period from the multiple speed monitoring periods obtained; Step S222: Monitor the polishing speed of the target semiconductor substrate during the sample speed monitoring period to obtain the polishing speed monitoring value corresponding to the sample speed monitoring period; Step S222 further includes the following specific steps: Several speed monitoring time points were selected during the sample speed monitoring period. The polishing speed value of the polishing equipment at each speed monitoring time point was obtained, resulting in multiple polishing speed values. The average value of the polishing speed values ​​was calculated to obtain the average polishing speed value for the time period. The difference between each polishing speed value and the average polishing speed of the time period is obtained, and the absolute value of the obtained difference is taken to obtain the polishing speed deviation corresponding to each speed monitoring time point. The polishing speed deviation threshold is compared numerically, and the speed monitoring time points with polishing speed deviation less than the polishing speed deviation threshold are marked as valid speed monitoring time points. The polishing speed value corresponding to each effective speed monitoring time point is obtained, and the average value is calculated to obtain the polishing speed monitoring value for the time period. Step S223: Repeat the process of obtaining the polishing speed monitoring value corresponding to the time period of the sample speed monitoring period, and obtain the polishing speed monitoring value corresponding to each speed monitoring period to obtain multiple time period polishing speed monitoring values; Step S224: Obtain the Z1 speed value sub-interval to the Zb speed value sub-interval by analyzing the polishing speed monitoring values ​​of multiple time periods; Step S224 further includes the following specific steps: The polishing speed monitoring values ​​obtained from multiple time periods are compared. The polishing speed monitoring value of the time period with the largest value is marked as the first cycle speed monitoring value, and the polishing speed monitoring value of the time period with the smallest value is marked as the second cycle speed monitoring value. The range of values ​​between the first cycle speed monitoring value and the second cycle speed monitoring value is marked as the cycle polishing speed value interval. The periodic polishing speed range is divided into several speed range sub-ranges, and the obtained multiple speed range sub-ranges are marked as Z1 speed range sub-range to Zb speed range sub-range according to the time sequence. Step S225: Obtain the midpoint values ​​of the intervals corresponding to the Z1 speed value sub-interval to the Zb speed value sub-interval respectively, to obtain the midpoint values ​​of the Z1 speed interval to the Zb speed interval. Step S226: Accumulate the duration of the speed monitoring period when the polishing speed monitoring value is in the Z1 speed value sub-interval to obtain the speed duration of the Z1 interval. Accumulate the duration of the speed monitoring period when the polishing speed monitoring value is in the Z2 speed value sub-interval to obtain the speed duration of the Z2 interval. And so on, accumulate the duration of the speed monitoring period when the polishing speed monitoring value is in the Zb speed value sub-interval to obtain the speed duration of the Zb interval. Step S227: Calculate the periodic polishing speed index value by taking the midpoint value of the Z1 speed range to the midpoint value of the Zb speed range and the duration of the Z1 speed range to the duration of the Zb speed range. The specific formula for calculating the periodic polishing rotation speed is as follows: ; Where Zyy is the periodic polishing speed index value, Zzzj is the median value of the Zj speed range, Zscj is the duration of the speed range in the Zi range, and b is the quantity value corresponding to the sub-range of speed values. Step S23: Set a substrate polishing speed matching range by using the periodic polishing speed index value as the midpoint of the range; Step S24: Obtain substrate pressure matching data. Based on the substrate pressure matching data, obtain multiple semiconductor substrates with consistent pressure. Obtain the periodic polishing speed index value corresponding to each semiconductor substrate with consistent pressure. Mark the semiconductor substrates with consistent pressure whose periodic polishing speed index value is in the substrate polishing speed matching range as polishing sample substrates. Obtain multiple polishing sample substrates and define the multiple polishing sample substrates as substrate processing matching data. Step S3: Monitor the polishing temperature of the target semiconductor substrate in real time based on the substrate processing matching data, and control the polishing temperature based on the monitoring results; Step S3 further includes the following specific steps: Acquire substrate processing matching data, and obtain multiple polished sample substrates based on the substrate processing matching data; The polishing temperature of the target semiconductor substrate at the current moment is obtained to obtain the real-time polishing temperature of the target. Obtain the time distance between the current moment and the start time of polishing to get the characteristic polishing duration; The polishing temperature value of each polishing sample substrate is obtained at the time after the polishing characteristic polishing time, resulting in multiple sample polishing temperature values. The multiple sample polishing temperature values ​​are compared, and the sample polishing temperature value with the largest value is marked as the first polishing reference temperature value, and the sample polishing temperature value with the smallest value is marked as the second polishing reference temperature value. The temperature range between the first polishing reference temperature value and the second polishing reference temperature value is marked as the temperature adjustment reference range. If the target real-time polishing temperature is greater than the first polishing reference temperature, then reduce the polishing temperature of the target semiconductor substrate until the target real-time polishing temperature is within the temperature adjustment reference range. If the target real-time polishing temperature is lower than the second polishing reference temperature, the polishing temperature of the target semiconductor substrate is increased until the target real-time polishing temperature is within the temperature adjustment reference range.

[0022] In this application, if a corresponding calculation formula appears, the above calculation formula is a dimensionless calculation. The weighting coefficient, proportional coefficient and other coefficients in the formula are set to quantify each parameter to obtain a result value. The size of the weighting coefficient and proportional coefficient is only required to not affect the proportional relationship between the parameter and the result value.

[0023] Example 2 Please see Figure 2 Based on another concept of the same invention, a temperature control system for semiconductor substrate polishing is proposed, including a polishing pressure module, a polishing speed module, a temperature control module and a server. The polishing pressure module, the polishing speed module and the temperature control module are respectively connected to the server, and the server controls the polishing pressure module, the polishing speed module and the temperature control module respectively. The polishing pressure module periodically monitors the polishing pressure of the target semiconductor substrate during the polishing monitoring cycle. Based on the monitoring results, a substrate polishing pressure matching interval is set. The target semiconductor substrate is matched with the historical single conductor substrate according to the substrate polishing pressure matching interval to obtain substrate pressure matching data. Specifically as follows: Semiconductor substrates in the polishing workshop are acquired to obtain multiple semiconductor substrates, and a target semiconductor substrate is randomly selected from the acquired multiple semiconductor substrates. It should be noted here that: In this application, the target semiconductor substrate referred to herein is specifically the substrate whose temperature is controlled by the temperature control system in this application; During the polishing pressure monitoring of the target semiconductor substrate, the time point at which the polishing of the target semiconductor substrate begins is marked as the first pressure monitoring characteristic time point, the time point corresponding to the current moment is marked as the second pressure monitoring characteristic time point, and the time period between the first pressure monitoring characteristic time point and the second pressure monitoring characteristic time point is marked as the substrate polishing pressure monitoring cycle. Periodically monitor the polishing pressure of the target semiconductor substrate during the substrate polishing pressure monitoring cycle, and obtain the periodic polishing pressure index value corresponding to the target semiconductor substrate based on the monitoring results. Specifically as follows: The substrate polishing pressure monitoring cycle is divided into several pressure monitoring periods of equal duration, and one sample pressure monitoring period is randomly selected from the multiple pressure monitoring periods obtained. It should be noted here that: In this application, the specific time length corresponding to the pressure monitoring period mentioned here is 3 seconds.

[0024] Polishing pressure monitoring is performed on the target semiconductor substrate during the sample pressure monitoring period to obtain the polishing pressure monitoring value corresponding to the sample pressure monitoring period. Specifically as follows: Several pressure monitoring time points were selected during the sample pressure monitoring period. The polishing pressure value applied by the polishing equipment at each pressure monitoring time point was obtained, resulting in multiple polishing pressure values. The average value of the polishing pressure values ​​was then calculated to obtain the average polishing pressure value for the period. The difference between each polishing pressure value and the average polishing pressure over a period of time is obtained, and the absolute value of the difference is taken to obtain the polishing pressure deviation corresponding to each pressure monitoring time point. The polishing pressure deviation threshold is compared numerically, and the pressure monitoring time points with polishing pressure deviation less than the polishing pressure deviation threshold are marked as valid pressure monitoring time points. It should be noted here that: The polishing pressure deviation threshold involved here is specifically set as Ypz×0.05, where Ypz is the average polishing pressure over a period of time; The polishing pressure value corresponding to each effective pressure monitoring time point is obtained, and the average value is calculated to obtain the polishing pressure monitoring value for the time period. Repeat the process of obtaining the polishing pressure monitoring values ​​for the corresponding time period of the sample pressure monitoring period, and obtain the polishing pressure monitoring values ​​for each time period to obtain multiple polishing pressure monitoring values ​​for each time period. The polishing pressure monitoring values ​​obtained from multiple time periods are compared. The polishing pressure monitoring value of the time period with the largest value is marked as the first cycle pressure monitoring value, and the polishing pressure monitoring value of the time period with the smallest value is marked as the second cycle pressure monitoring value. The range of values ​​between the first cycle pressure monitoring value and the second cycle pressure monitoring value is marked as the cycle polishing pressure value interval. The periodic polishing pressure value range is divided into several pressure value sub-ranges, and the obtained multiple pressure value sub-ranges are marked as Y1 pressure value sub-range to Ya pressure value sub-range according to the time sequence. It should be noted here that: In this application, Y is the symbol corresponding to the pressure numerical sub-interval, a is the quantity value corresponding to the pressure numerical sub-interval, and a is an integer greater than 0.

[0025] The midpoint values ​​of the intervals corresponding to the sub-intervals of pressure values ​​from Y1 to Ya are obtained respectively, thus obtaining the midpoint values ​​of the pressure intervals from Y1 to Ya. The duration of pressure monitoring periods with polishing pressure monitoring values ​​in the Y1 pressure value sub-interval is accumulated to obtain the pressure duration of the Y1 interval. The duration of pressure monitoring periods with polishing pressure monitoring values ​​in the Y2 pressure value sub-interval is accumulated to obtain the pressure duration of the Y2 interval. Similarly, the duration of pressure monitoring periods with polishing pressure monitoring values ​​in the Ya pressure value sub-interval is accumulated to obtain the pressure duration of the Ya interval. The periodic polishing pressure index value is obtained by calculating the midpoint of the Y1 pressure range to the midpoint of the Ya pressure range and the duration of pressure in the Y1 range to the duration of pressure in the Ya range. The formula for calculating the periodic polishing pressure index is as follows: ; Where Zyz is the periodic polishing pressure index value, Yzzi is the median value of the Yi pressure range, Ysci is the duration of the Yi pressure range, and a is the quantity value corresponding to the sub-range of pressure values. It should be noted here that: In this application, the intermediate value of the Yi pressure range can be any intermediate value of the pressure range from the intermediate value of the Y1 pressure range to the intermediate value of the Ya pressure range, and the duration of the Yi pressure range can be any duration of the pressure range from the duration of the Y1 pressure range to the duration of the Ya pressure range. In practice, the following test data exists: When polishing the test semiconductor substrate, the midpoint value of the Y1 pressure range was measured to be 20 kPa, the midpoint value of the Y2 pressure range was 25 kPa, and the midpoint value of the Y3 pressure range was 30 kPa. The duration of pressure in the Y1 range was 60 s, the duration of pressure in the Y2 range was 62 s, and the duration of pressure in the Y3 range was 67 s. Therefore, the periodic polishing pressure index value can be calculated to be 1586.67.

[0026] A substrate polishing pressure matching interval is set by taking the periodic polishing pressure index value as the middle value of the interval. Several historical semiconductor substrates that have been polished are obtained. The periodic polishing pressure index value corresponding to each historical semiconductor substrate is obtained. The historical semiconductor substrates whose periodic polishing pressure index value is in the substrate polishing pressure matching interval are marked as pressure-consistent semiconductor substrates, and multiple pressure-consistent semiconductor substrates are obtained. It should be noted here that: In this application, all historical semiconductor substrates referred to herein are semiconductor substrates with no abnormal processing temperature and qualified polishing process.

[0027] The resulting multiple semiconductor substrates with consistent pressure are defined as substrate pressure matching data.

[0028] It should be noted here that: In this application, the lower limit of the substrate polishing pressure matching range is Zyz×(1-0.05), and the lower limit of the substrate polishing pressure matching range is Zyz×(1+0.05). The 0.05 mentioned here is the set pressure matching deviation value.

[0029] The polishing speed module periodically monitors the polishing speed of the target semiconductor substrate during the polishing monitoring cycle. Based on the monitoring results, a substrate polishing speed matching range is set. According to the substrate pressure matching data, the polishing speed of the target semiconductor substrate and the semiconductor substrate with the same pressure are matched to obtain the substrate processing matching data. Specifically as follows: Semiconductor substrates in the polishing workshop are acquired to obtain multiple semiconductor substrates, and a target semiconductor substrate is randomly selected from the acquired multiple semiconductor substrates. It should be noted here that: In this application, the target semiconductor substrate referred to herein is specifically the substrate whose temperature is controlled by the temperature control system in this application; During the process of monitoring the polishing speed of the target semiconductor substrate, the time point at which the polishing of the target semiconductor substrate begins is marked as the first speed monitoring characteristic time point, the time point corresponding to the current moment is marked as the second speed monitoring characteristic time point, and the time period between the first speed monitoring characteristic time point and the second speed monitoring characteristic time point is marked as the substrate polishing speed monitoring cycle. The polishing speed of the target semiconductor substrate during the substrate polishing speed monitoring cycle is periodically monitored, and the periodic polishing speed index value corresponding to the target semiconductor substrate is obtained based on the monitoring results. Specifically as follows: The substrate polishing speed monitoring cycle is divided into several speed monitoring periods of equal duration, and one sample speed monitoring period is randomly selected from the multiple speed monitoring periods obtained. It should be noted here that: In this application, the specific time length corresponding to the speed monitoring period mentioned herein is 3 seconds.

[0030] Polishing speed monitoring is performed on the target semiconductor substrate during the sample speed monitoring period to obtain the polishing speed monitoring value corresponding to the sample speed monitoring period; Specifically as follows: Several speed monitoring time points were selected during the sample speed monitoring period. The polishing speed value of the polishing equipment at each speed monitoring time point was obtained, resulting in multiple polishing speed values. The average value of the polishing speed values ​​was calculated to obtain the average polishing speed value for the time period. The difference between each polishing speed value and the average polishing speed of the time period is obtained, and the absolute value of the obtained difference is taken to obtain the polishing speed deviation corresponding to each speed monitoring time point. The polishing speed deviation threshold is compared numerically, and the speed monitoring time points with polishing speed deviation less than the polishing speed deviation threshold are marked as valid speed monitoring time points. It should be noted here that: The polishing speed deviation threshold involved here is specifically set as Zpz×0.05, where Zpz is the average polishing speed over a period of time; The polishing speed value corresponding to each effective speed monitoring time point is obtained, and the average value is calculated to obtain the polishing speed monitoring value for the time period. Repeat the process of obtaining the polishing speed monitoring values ​​for the corresponding time period of the sample speed monitoring period, and obtain the polishing speed monitoring values ​​for each time period to obtain multiple polishing speed monitoring values ​​for each time period. The polishing speed monitoring values ​​obtained from multiple time periods are compared. The polishing speed monitoring value of the time period with the largest value is marked as the first cycle speed monitoring value, and the polishing speed monitoring value of the time period with the smallest value is marked as the second cycle speed monitoring value. The range of values ​​between the first cycle speed monitoring value and the second cycle speed monitoring value is marked as the cycle polishing speed value interval. The periodic polishing speed range is divided into several speed range sub-ranges, and the obtained multiple speed range sub-ranges are marked as Z1 speed range sub-range to Zb speed range sub-range according to the time sequence. It should be noted here that: In this application, Z is the symbol corresponding to the numerical sub-interval of rotational speed, b is the quantity value corresponding to the numerical sub-interval of rotational speed, and b is an integer greater than 0.

[0031] The midpoint values ​​of the intervals corresponding to the Z1 speed value sub-interval and the Zb speed value sub-interval are obtained respectively, thus obtaining the midpoint values ​​of the Z1 speed interval and the Zb speed interval. The duration of the speed monitoring period when the polishing speed monitoring value is in the Z1 speed value sub-interval is accumulated to obtain the speed duration of the Z1 interval. The duration of the speed monitoring period when the polishing speed monitoring value is in the Z2 speed value sub-interval is accumulated to obtain the speed duration of the Z2 interval. Similarly, the duration of the speed monitoring period when the polishing speed monitoring value is in the Zb speed value sub-interval is accumulated to obtain the speed duration of the Zb interval. The periodic polishing speed index value is obtained by calculating the midpoint value of the Z1 speed range to the midpoint value of the Zb speed range and the duration of the Z1 speed range to the duration of the Zb speed range. The specific formula for calculating the periodic polishing rotation speed is as follows: ; Where Zyy is the periodic polishing speed index value, Zzzj is the median value of the Zj speed range, Zscj is the duration of the speed range in the Zi range, and b is the quantity value corresponding to the sub-range of speed values. It should be noted here that: In this application, the intermediate value of the Zj speed range can be any intermediate value of the speed range from the intermediate value of the Z1 speed range to the intermediate value of the Zb speed range, and the duration of the Zj speed range can be any duration of the speed range from the duration of the Z1 speed range to the duration of the Zb speed range. In practice, the following test data exists: When polishing the test semiconductor substrate, the midpoint value of the Z1 speed range was measured to be 30 RPM, the midpoint value of the Z2 speed range was 35 RPM, and the midpoint value of the Z3 speed range was 40 RPM. The duration of the Z1 speed range was 60 s, the duration of the Z2 speed range was 65 s, and the duration of the Z3 speed range was 67 s. Therefore, the periodic polishing speed index value can be calculated to be 2251.67.

[0032] Set a substrate polishing speed matching interval by using the periodic polishing speed index value as the middle value of the interval; Acquire substrate pressure matching data, obtain multiple semiconductor substrates with consistent pressure based on the substrate pressure matching data, obtain the periodic polishing speed index value corresponding to each semiconductor substrate with consistent pressure, mark the semiconductor substrates with consistent pressure whose periodic polishing speed index value is in the substrate polishing speed matching range as polishing sample substrates, and obtain multiple polishing sample substrates. The resulting multiple polished sample substrates are defined as substrate processing matching data; It should be noted here that: In this application, the lower limit of the substrate polishing speed matching range is Zyy×(1-0.05), and the lower limit of the substrate polishing speed matching range is Zyy×(1+0.05). The 0.05 mentioned here is the set speed matching deviation value.

[0033] The temperature control module monitors the polishing temperature of the target semiconductor substrate in real time based on the substrate processing matching data, and controls the polishing temperature based on the monitoring results. Acquire substrate processing matching data, and obtain multiple polished sample substrates based on the substrate processing matching data; The polishing temperature of the target semiconductor substrate at the current moment is obtained to obtain the real-time polishing temperature of the target. Obtain the time distance between the current moment and the start time of polishing to get the characteristic polishing duration; The polishing temperature value of each polishing sample substrate is obtained at the time after the polishing characteristic polishing time, resulting in multiple sample polishing temperature values. The multiple sample polishing temperature values ​​are compared, and the sample polishing temperature value with the largest value is marked as the first polishing reference temperature value, and the sample polishing temperature value with the smallest value is marked as the second polishing reference temperature value. The temperature range between the first polishing reference temperature value and the second polishing reference temperature value is marked as the temperature adjustment reference range. If the target real-time polishing temperature is greater than the first polishing reference temperature, then reduce the polishing temperature of the target semiconductor substrate until the target real-time polishing temperature is within the temperature adjustment reference range. If the target real-time polishing temperature is lower than the second polishing reference temperature, the polishing temperature of the target semiconductor substrate is increased until the target real-time polishing temperature is within the temperature adjustment reference range.

[0034] The preferred embodiments of the present invention disclosed above are merely illustrative of the invention. These preferred embodiments do not exhaustively describe all details, nor do they limit the invention to any specific implementation. Clearly, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to better understand and utilize the invention. The invention is limited only by the claims and their full scope and equivalents.

Claims

1. A temperature control method for polishing a semiconductor substrate, characterized by, include: Step S1: Periodically monitor the polishing pressure of the target semiconductor substrate during the polishing monitoring cycle. Set a substrate polishing pressure matching range based on the monitoring results. Match the polishing pressure of the target semiconductor substrate with that of the historical semiconductor substrate according to the substrate polishing pressure matching range to obtain substrate pressure matching data. Step S2: Periodically monitor the polishing speed of the target semiconductor substrate during the polishing monitoring cycle, set a substrate polishing speed matching range based on the monitoring results, and perform polishing speed consistency matching between the target semiconductor substrate and the semiconductor substrate with consistent pressure according to the substrate pressure matching data to obtain substrate processing matching data; Step S3: Monitor the polishing temperature of the target semiconductor substrate in real time based on the substrate processing matching data, and control the polishing temperature based on the monitoring results.

2. The temperature control method for polishing a semiconductor substrate according to claim 1, wherein Step S1 further includes the following specific steps: Step S11: Obtain semiconductor substrates in the polishing workshop to obtain multiple semiconductor substrates, and arbitrarily select one target semiconductor substrate from the multiple semiconductor substrates obtained; Step S12: During the polishing pressure monitoring of the target semiconductor substrate, mark one substrate polishing pressure monitoring cycle; Step S13: Perform periodic polishing pressure monitoring on the target semiconductor substrate during the substrate polishing pressure monitoring cycle, and obtain the periodic polishing pressure index value corresponding to the target semiconductor substrate based on the monitoring results; Step S14: Set a substrate polishing pressure matching interval by using the periodic polishing pressure index value as the intermediate value of the interval, obtain several historical semiconductor substrates that have been polished, obtain the periodic polishing pressure index value corresponding to each historical semiconductor substrate, and mark the historical semiconductor substrates whose periodic polishing pressure index value is in the substrate polishing pressure matching interval as pressure-consistent semiconductor substrates, thus obtaining multiple pressure-consistent semiconductor substrates. Step S15: Define the resulting multiple pressure-matched semiconductor substrates as substrate pressure matching data.

3. The temperature control method of polishing a semiconductor substrate according to claim 2, wherein Step S13 further includes the following specific steps: Step S131: Divide the substrate polishing pressure monitoring cycle into several pressure monitoring periods of equal duration, and arbitrarily select one sample pressure monitoring period from the multiple pressure monitoring periods obtained; Step S132: Perform polishing pressure monitoring on the target semiconductor substrate during the sample pressure monitoring period to obtain the polishing pressure monitoring value corresponding to the sample pressure monitoring period. Step S133: Obtain the polishing pressure monitoring value corresponding to each pressure monitoring period, and obtain multiple polishing pressure monitoring values ​​for each period; Step S134: Compare the values ​​of the polishing pressure monitoring data obtained in multiple time periods, mark the polishing pressure monitoring data of the time period with the largest value as the first cycle pressure monitoring value, mark the polishing pressure monitoring data of the time period with the smallest value as the second cycle pressure monitoring value, and mark the range of values ​​between the first cycle pressure monitoring value and the second cycle pressure monitoring value as the cycle polishing pressure value interval. Step S135: Divide the periodic polishing pressure value range into Y1 pressure value sub-range to Ya pressure value sub-range; Step S136: Obtain the midpoint values ​​of the intervals corresponding to the sub-intervals of pressure values ​​from Y1 to Ya, and obtain the midpoint values ​​of the pressure intervals from Y1 to Ya. Step S137: Accumulate the duration of pressure monitoring periods in which the polishing pressure monitoring value falls within the Y1 pressure value sub-interval to obtain the pressure duration in the Y1 interval. Similarly, accumulate the duration of pressure monitoring periods in which the polishing pressure monitoring value falls within the Ya pressure value sub-interval to obtain the pressure duration in the Ya interval. Step S138: Calculate the periodic polishing pressure index value by taking the midpoint of the Y1 pressure range to the midpoint of the Ya pressure range and the duration of the Y1 pressure range to the duration of the Ya pressure range. The formula for calculating the periodic polishing pressure index is as follows: ； Where Zyz is the periodic polishing pressure index value, Yzzi is the median value of the Yi pressure range, Ysci is the duration of the pressure in the Yi range, and a is the quantity value corresponding to the sub-range of pressure values.

4. The temperature control method of polishing a semiconductor substrate according to claim 3, wherein Step S132 further includes the following specific steps: Several pressure monitoring time points were selected during the sample pressure monitoring period. The polishing pressure value applied by the polishing equipment at each pressure monitoring time point was obtained, resulting in multiple polishing pressure values. The average value of the polishing pressure values ​​was then calculated to obtain the average polishing pressure value for the period. The difference between each polishing pressure value and the average polishing pressure over a period of time is obtained, and the absolute value of the difference is taken to obtain the polishing pressure deviation corresponding to each pressure monitoring time point. The polishing pressure deviation threshold is compared numerically, and the pressure monitoring time points with polishing pressure deviation less than the polishing pressure deviation threshold are marked as valid pressure monitoring time points. The polishing pressure value corresponding to each effective pressure monitoring time point is obtained, and the average value is calculated to obtain the polishing pressure monitoring value for the time period.

5. The temperature control method for polishing a semiconductor substrate according to claim 1, wherein Step S2 further includes the following specific steps: Step S21: During the process of monitoring the polishing speed of the target semiconductor, mark one substrate polishing speed monitoring cycle; Step S22: Periodically monitor the polishing speed of the target semiconductor substrate during the substrate polishing speed monitoring cycle, and obtain the periodic polishing speed index value corresponding to the target semiconductor substrate based on the monitoring results; Step S23: Set a substrate polishing speed matching range by using the periodic polishing speed index value as the midpoint of the range; Step S24: Obtain substrate pressure matching data. Based on the substrate pressure matching data, obtain multiple semiconductor substrates with consistent pressure. Obtain the periodic polishing speed index value corresponding to each semiconductor substrate with consistent pressure. Mark the semiconductor substrates with consistent pressure whose periodic polishing speed index value is in the substrate polishing speed matching range as polishing sample substrates. Obtain multiple polishing sample substrates and define the obtained multiple polishing sample substrates as substrate processing matching data.

6. The temperature control method of polishing a semiconductor substrate according to claim 5, wherein Step S22 further includes the following specific steps: Step S221: Divide the substrate polishing speed monitoring cycle into several speed monitoring periods of equal duration, and arbitrarily select one sample speed monitoring period from the multiple speed monitoring periods obtained; Step S222: Monitor the polishing speed of the target semiconductor substrate during the sample speed monitoring period to obtain the polishing speed monitoring value corresponding to the sample speed monitoring period; Step S223: Obtain the polishing speed monitoring value for each time period corresponding to the speed monitoring period, and obtain multiple polishing speed monitoring values ​​for each time period; Step S224: Obtain the Z1 speed value sub-interval to the Zb speed value sub-interval by analyzing the polishing speed monitoring values ​​of multiple time periods; Step S225: Obtain the midpoint values ​​of the intervals corresponding to the Z1 speed value sub-interval to the Zb speed value sub-interval respectively, to obtain the midpoint values ​​of the Z1 speed interval to the Zb speed interval. Step S226: Accumulate the duration of the time period when the polishing speed monitoring value is in the Z1 speed value sub-interval to obtain the duration of the speed in the Z1 interval. Similarly, accumulate the duration of the time period when the polishing speed monitoring value is in the Zb speed value sub-interval to obtain the duration of the speed in the Zb interval. Step S227: Calculate the periodic polishing speed index value by taking the midpoint value of the Z1 speed range to the midpoint value of the Zb speed range and the duration of the Z1 speed range to the duration of the Zb speed range. The specific formula for calculating the periodic polishing rotation speed is as follows: ； Where Zyy is the periodic polishing speed index value, Zzzj is the median value of the Zj speed range, Zscj is the duration of the speed range in the Zi range, and b is the quantity value corresponding to the sub-range of speed values.

7. The temperature control method of polishing a semiconductor substrate according to claim 6, wherein Step S222 further includes the following specific steps: Several speed monitoring time points were selected during the sample speed monitoring period. The polishing speed value of the polishing equipment at each speed monitoring time point was obtained, resulting in multiple polishing speed values. The average value of the polishing speed values ​​was calculated to obtain the average polishing speed value for the time period. The difference between each polishing speed value and the average polishing speed of the time period is obtained, and the absolute value of the obtained difference is taken to obtain the polishing speed deviation corresponding to each speed monitoring time point. The polishing speed deviation threshold is compared numerically, and the speed monitoring time points with polishing speed deviation less than the polishing speed deviation threshold are marked as valid speed monitoring time points. The polishing speed value corresponding to each effective speed monitoring time point is obtained, and the average value is calculated to obtain the polishing speed monitoring value for the time period.

8. The temperature control method of polishing a semiconductor substrate according to claim 6, wherein Step S224 further includes the following specific steps: The polishing speed monitoring values ​​obtained from multiple time periods are compared. The polishing speed monitoring value of the time period with the largest value is marked as the first cycle speed monitoring value, and the polishing speed monitoring value of the time period with the smallest value is marked as the second cycle speed monitoring value. The range of values ​​between the first cycle speed monitoring value and the second cycle speed monitoring value is marked as the cycle polishing speed value interval. The numerical range of the periodic polishing speed is divided into the numerical range of speed Z1 to speed Zb.

9. The temperature control method for polishing a semiconductor substrate according to claim 5, characterized in that, Step S24 further includes the following specific steps: Acquire substrate processing matching data, and obtain multiple polished sample substrates based on the substrate processing matching data; The polishing temperature of the target semiconductor substrate at the current moment is obtained to obtain the real-time polishing temperature of the target. Obtain the time distance between the current moment and the start time of polishing to get the characteristic polishing duration; The polishing temperature value of each polishing sample substrate is obtained at the time after the polishing characteristic polishing time, resulting in multiple sample polishing temperature values. The multiple sample polishing temperature values ​​are compared, and the sample polishing temperature value with the largest value is marked as the first polishing reference temperature value, and the sample polishing temperature value with the smallest value is marked as the second polishing reference temperature value. The temperature range between the first polishing reference temperature value and the second polishing reference temperature value is marked as the temperature adjustment reference range. If the target real-time polishing temperature is greater than the first polishing reference temperature, then reduce the polishing temperature of the target semiconductor substrate until the target real-time polishing temperature is within the temperature adjustment reference range. If the target real-time polishing temperature is lower than the second polishing reference temperature, the polishing temperature of the target semiconductor substrate is increased until the target real-time polishing temperature is within the temperature adjustment reference range.

10. A temperature control system for polishing a semiconductor substrate, applicable to the temperature control method for polishing a semiconductor substrate according to any one of claims 1-9, characterized in that, The temperature control system includes: Polishing pressure module: Periodically monitors the polishing pressure of the target semiconductor substrate during the polishing monitoring cycle, sets a substrate polishing pressure matching range based on the monitoring results, and matches the polishing pressure of the target semiconductor substrate with that of the historical semiconductor substrate according to the substrate polishing pressure matching range to obtain substrate pressure matching data; Polishing speed module: Periodically monitors the polishing speed of the target semiconductor substrate during the polishing monitoring cycle, sets a substrate polishing speed matching range based on the monitoring results, and performs polishing speed consistency matching between the target semiconductor substrate and the semiconductor substrate with the same pressure according to the substrate pressure matching data to obtain substrate processing matching data; Temperature control module: Real-time polishing temperature monitoring of the target semiconductor substrate based on substrate processing matching data, and polishing temperature control based on the monitoring results.

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