Vacuum equipment, methods and applications

Abstract

Various embodiments of the present invention relate to a vacuum device, comprising: a vacuum chamber housing (812); a conveying device for conveying a substrate along a conveying path (111) within the vacuum chamber housing (812); a plasma source (150) having a cavity (102h) in its plasma source housing (102), the plasma source (150) being configured to generate plasma through the cavity (102h) and expose the conveying path (111) to the plasma; an electrode (202) disposed juxtaposed with the plasma source (150) within the vacuum chamber housing (812); and a high-frequency transmission device (110) ohmically coupling the plasma source housing (102) to the electrode (202).

Description

Technical Field

[0001] This invention relates to a vacuum device, method, and application. Background Technology

[0002] Generally, substrates can be processed (e.g., plated) in a vacuum environment, thereby altering their chemical and / or physical properties. Various plating processes can be used to plate substrates, with physical vapor deposition (PVD) being one of the most mature technologies. For example, vacuum plating systems can be used to deposit one or more layers onto one or more substrates via chemical and / or physical vapor deposition.

[0003] For various processes, it may be advantageous to use plasma for pre- or post-treatment of the substrate. To generate plasma, a plasma source, such as one with hollow electrodes, is required. Therefore, to reduce maintenance costs, a long service life is generally required for the plasma source. Summary of the Invention

[0004] The various embodiments of this invention are based on the understanding that the lifespan of a plasma source itself is limited by the lifespan of its internal components directly exposed to the plasma. If the component with the shortest lifespan fails, it often leads to a malfunction of the entire plasma source, requiring maintenance. In this regard, the so-called grid typically included with a plasma source when it is sold as a finished product is such a component.

[0005] The grid is used to confine plasma diffusion but still allows atoms, electrons, and ions to pass through and exchange. However, the grid itself is exposed to plasma and will gradually be corroded until it fails. If the grid fails, plasma will diffuse into the vacuum chamber, potentially damaging other components such as seals and bearings. Therefore, a trade-off must often be made: either shorten the maintenance interval to replace the grid or accept the risk of damage to other potentially high-value components.

[0006] Similarly, gate etching contradicts plasma purity requirements because components released during plasma etching of the gate may reach the substrate, potentially contaminating it. For example, in semiconductor applications, the metallic properties of the gate can severely impact semiconductor product performance.

[0007] According to various embodiments of the present invention, a vacuum apparatus, method, and application are provided that can suppress plasma spatial diffusion even in the event of gate failure or complete absence. For example, the gate can be omitted (e.g., pre-removal), thereby improving vacuum quality.

[0008] It is clear that if the gate also has high-frequency functionality, its function of limiting the spatial distribution of the electric field that generates plasma within the vacuum chamber shell will be fully utilized. In this regard, although the vacuum chamber shell itself is usually grounded, its electric field characteristics (e.g., high-frequency characteristics) suppress charge exchange with the plasma source.

[0009] Clearly, the current density inside an electrical conductor decreases with increasing frequency (also known as the skin effect), meaning the conductor's impedance to current depends primarily on its morphology. In this case, the current mainly flows on the conductor's surface, which is generally unsuitable for the design of a vacuum chamber shell. Therefore, even if the vacuum chamber shell is grounded, its high-frequency (HF) impedance is usually still too high to effectively suppress plasma diffusion on its own.

[0010] Against this backdrop, the present invention provides a high-frequency transmission device in which electrodes are disposed within a vacuum chamber housing. The high-frequency transmission device is coupled to a plasma source, facilitating charge exchange between the electrodes and the plasma source.

[0011] The following describes various embodiments relating to the above description and the accompanying drawings.

[0012] Example 1. A vacuum device, comprising: a vacuum chamber housing; a conveying device for conveying a substrate along a conveying path within the vacuum chamber housing; a plasma source having a cavity in its plasma source housing, the plasma source being configured to generate plasma through the cavity and expose the conveying path to the plasma; an electrode (also known as a chamber electrode) disposed juxtaposed (adjacent) to the plasma source (e.g., behind the conveying path) within the vacuum chamber housing; and an HF conveying device (high-frequency conveying device) ohmically coupling the plasma source housing to the electrode.

[0013] Example 2. According to the configuration described in Example 1, the transmission device is ohmically coupled to the vacuum chamber housing or electrically isolated from the vacuum chamber housing (e.g., via a bearing device).

[0014] Example 3. According to the configuration described in Example 1 or Example 2, it further includes a bearing device through which the electrode is ohmically coupled to the vacuum chamber housing or electrically decoupled from the vacuum chamber housing; or wherein the electrode is attached to the vacuum chamber housing (e.g., its shell wall) in a flat-attached manner.

[0015] Example 4. According to the configuration described in any of Examples 1 to 3, wherein the plasma source housing is at least partially arranged outside the vacuum chamber housing and / or mounted outside the vacuum chamber housing (e.g., on the outside).

[0016] Example 5. According to the configuration described in any of Examples 1 to 4, the transmission device includes one or more wires, wherein preferably: the first wire is arranged inside the vacuum chamber housing and / or provided by HF stranded wire (high frequency stranded wire), and / or the second wire is arranged outside the vacuum chamber housing and / or provided by HF stranded wire.

[0017] Example 6. According to the configuration described in any of Examples 1 to 5, the transmission device includes one or more HF stranded wires, wherein preferably: the first HF stranded wire is arranged inside the vacuum chamber housing (e.g., providing a first wire), and / or the second HF stranded wire is arranged outside the vacuum chamber housing (e.g., providing a second wire).

[0018] Example 7. According to the configuration described in any of Examples 1 to 6, the vacuum chamber housing (e.g., its shell wall) has one or more openings, wherein: a vacuum feedthrough of a transmission device is arranged in a first opening, and / or a second opening is adjacent to a plasma source (e.g., an exposed cavity).

[0019] Example 8. According to the configuration described in any of Examples 1 to 7, wherein the vacuum feeder includes a copper rod that extends through the first housing opening and / or ohmically couples two wires (e.g., HF stranded wires) of the transmission device to each other.

[0020] Example 9. According to the configuration described in any of Examples 1 to 8, the transmission device couples the plasma source housing to the electrodes by impedance, for example, for a frequency range of 1 kHz (e.g., 1 MHz) to 100 MHz (e.g., 20 MHz) and / or the plasma source operating frequency, the impedance value ranges from 0.1 ohms (e.g., 1 ohm) to 1 megaohm (e.g., 1 kiloohm, e.g., 100 ohms, e.g., 10 ohms).

[0021] Example 10. According to any of Examples 1 to 9, the configuration wherein the delivery path is arranged inside the housing of the vacuum chamber housing, wherein the cavity is fluidly coupled to the housing, for example, directly adjacent to the housing housing.

[0022] Example 11. In any of the configurations described in Examples 1 to 10, no electrodes (e.g., grid electrodes and / or filament electrodes) are provided between the transport path and the cavity.

[0023] Example 12. According to the configuration described in any of Examples 1 to 11, it further includes: a gas separation channel having a transport path arranged between two gas separation walls, one of which provides an electrode, wherein the gas separation channel is configured to gas-separate two processing regions from each other, wherein the first processing region is exposed to a plasma source and / or the second processing region is exposed to a coating apparatus (e.g., a sputtering apparatus).

[0024] Example 13. The configuration according to any one of Examples 1 to 12, wherein the electrode is plate-shaped and / or has a mounting mechanism for attaching an HF transmission device.

[0025] Example 14. According to the configuration described in any of Examples 1 to 13, wherein, for high frequencies (e.g., at least one frequency in the range of 1 MHz to 100 MHz), the impedance provided between the electrode and the plasma source housing via the transmission device is less than the impedance provided between the electrode and the plasma source housing via the vacuum chamber housing.

[0026] Example 15. The configuration according to any one of Examples 1 to 14, wherein the transmission device is separately disposed from the vacuum chamber housing and / or can be removed from the vacuum chamber housing.

[0027] Example 16. A method for configuring and / or operating a vacuum device according to any one of Examples 1 to 15, the method comprising: forming a plasma by means of a plasma source, the plasma being at least partially disposed in a cavity; and conveying a substrate along a conveying path through the plasma source (e.g., through a processing area) by means of a conveying device, such that the substrate is exposed to the plasma; wherein, for example in the cavity, a vacuum is formed and / or the substrate is exposed to a vacuum.

[0028] Example 17. A method for configuring and / or operating a vacuum device according to any one of Examples 1 to 16, the method comprising: removing an additional electrode (e.g., a grid electrode) defining a cavity and / or disposed between the cavity and a transport path; forming a plasma (e.g., in the cavity) by means of a plasma source, preferably the plasma being at least partially disposed in the cavity, and the transport path being exposed to the plasma when the additional electrode is removed (e.g., such that the grid is not exposed to the plasma); wherein, for example in the cavity, a vacuum is formed and / or the transport path is exposed to a vacuum.

[0029] Example 18. According to the configuration described in any of Examples 1 to 17, and / or using a wall (e.g., a partition), preferably a gas separation wall, arranged within a vacuum chamber housing as an electrode of a plasma source, the plasma source housing has a cavity, wherein the plasma source is configured to form plasma through the cavity, and wherein the electrode is ohmically coupled to the plasma source housing via an HF transmission device. This saves structural space.

[0030] Example 19. The configuration according to any one of Examples 1 to 18, wherein the plasma source has a protective structure (also known as a protective dish) (e.g., bowl-shaped or dish-shaped), preferably made of a dielectric (e.g., glass) and / or electrically insulating, the protective structure being arranged in a cavity, wherein the protective structure, for example, provides a recess arranged in the cavity.

[0031] Example 20. According to the configuration described in any of Examples 1 to 19, the plasma source includes a first mounting mechanism (e.g., a flange) (e.g. for mounting a grid), the first mounting mechanism having a mounting surface facing the delivery path (e.g., frame type and / or recessed type), and an opening leading to a cavity is formed in the first mounting mechanism (e.g., the mounting surface surrounds the opening along a closed path).

[0032] Example 21. According to the configuration described in any of Examples 1 to 20, the plasma source housing has a second mounting mechanism (e.g., an external flange) that surrounds the cavity and / or the first mounting mechanism along a closed path, wherein the second mounting mechanism is configured to be vacuum-sealed with the vacuum chamber housing.

[0033] Example 22. According to the configuration described in any of Examples 1 to 21, the plasma source includes an electrode (also called a main electrode) arranged in and / or defining the cavity, wherein the plasma source preferably has an electrical terminal electrically coupled to the electrode. For example, the electrode may be current-isolated from the plasma source housing.

[0034] Example 23. According to the configuration described in any of Examples 1 to 22, the plasma source for forming plasma in the cavity operates at a high frequency and / or a frequency range of about 1 kHz (e.g., 1 MHz) to about 1 THz (terahertz), for example about 1 kHz (e.g., 1 MHz) to about 1 GHz (gigahertz).

[0035] Example 24. According to the configuration described in any of Examples 1 to 23, the HF transmission device is connected in parallel with the vacuum chamber housing.

[0036] Example 25. According to the configuration described in any of Examples 1 to 24, the transmission device includes one or more electrical conductors (e.g., HF stranded wire) having, for example, a braided structure comprising multiple monofilaments.

[0037] Example 26. According to the configuration described in any of Examples 1 to 25, wherein the number of monofilaments contained in the HF transmission device is greater than that of the vacuum chamber housing and / or the plasma source (e.g., its gate).

[0038] Example 27. According to the configuration described in any of Examples 1 to 26, wherein the proportion of copper and / or silver contained in the HF transmission device is higher than that in the vacuum chamber housing.

[0039] Example 28. The configuration according to any one of Examples 1 to 27, wherein the plasma source is configured to mount a gate (also known as a protective gate) defining the cavity, wherein preferably the gate is removed.

[0040] Example 29. The configuration according to any one of Examples 1 to 28, wherein the plasma source includes a dielectric trap arranged in the cavity.

[0041] Example 30. According to the configuration described in any of Examples 1 to 29, the plasma source is configured to emit at least a portion of the plasma (e.g., as a plasma jet), for example (preferably along the emission direction) directed toward the delivery path and / or the extraction cavity.

[0042] Example 31. According to the configuration described in any of Examples 1 to 30, wherein the plasma source emits at least a portion of unneutralized plasma during operation, for example, directed toward a delivery path and / or out of a cavity.

[0043] Example 32. According to the configuration described in any of Examples 1 to 31, wherein a working gas and / or a reaction gas are supplied to the cavity during operation. Attached Figure Description

[0044] Figures 1A to 5B Different schematic diagrams of vacuum equipment are shown. Detailed Implementation

[0045] The following description, in conjunction with the accompanying drawings which form part of this document, illustrates specific embodiments in which the invention may be practiced. In this regard, directional terms such as “up,” “down,” “front,” “back,” “forward,” and “backward” are used with reference to the orientation of the accompanying drawings. Components in various embodiments may be positioned in several different directions; therefore, the directional terms are illustrative and not restrictive. It is self-evident that other embodiments and structural or logical modifications may be made without departing from the inventive concept. It is self-evident that features of the various embodiments described herein can be combined with each other unless otherwise specifically indicated. Therefore, the following specific details should not be construed as restrictive, and the scope of protection of this invention should be defined by the appended claims.

[0046] In the context of this specification, the terms "connection," "docking," and "coupling" are used to describe direct and indirect connections (e.g., resistive and / or conductive connections), direct or indirect docking, and direct or indirect coupling. In the accompanying drawings, identical or similar elements may be labeled with the same reference numerals where appropriate.

[0047] According to various embodiments, the term "coupling" can be understood as, for example, a direct or indirect (e.g., mechanical, hydrostatic, thermal, and / or electrical) connection and / or interaction. Multiple elements may be coupled to each other, for example, along an interaction chain, and may exchange interactions along the interaction chain, such as fluid (also known as fluid coupling). For example, two coupled elements may exchange interactions with each other, such as mechanical, hydrostatic, thermal, and / or electrical interactions. The coupling of multiple vacuum components (e.g., valves, pumps, chambers, etc.) may include fluid conduction coupling between these components. According to various embodiments, "coupling" can be understood as a mechanical (e.g., material or physical) coupling, such as direct material contact. Coupling can be configured to transmit mechanical interactions (e.g., forces, torques, etc.).

[0048] In this document, the term "high frequency (HF)" refers to a frequency exceeding 1 kHz (kilohertz), such as exceeding approximately 1 MHz (megahertz), or exceeding approximately 1 GHz (gigahertz). Generally, there are only upper limits to the value of a high frequency, but it can be below approximately 1000 terahertz. For this purpose, this document exemplarily uses 13.56 MHz as the operating frequency (also known as the operating frequency) for the plasma source. It should be understood that the technical solutions described herein are equally applicable to any other operating frequency, such as 40 kHz, 27.12 MHz, or 2.45 GHz. Alternatively or additionally, the operating frequency can be in the range of approximately 1 MHz to approximately 100 MHz.

[0049] According to various implementation schemes, a plasma-generating gas can be ionized by a plasma source, and a substrate can be processed using the plasma thus generated. To generate plasma, a voltage (e.g., a high-frequency voltage) can be applied to the electrodes (also called main electrodes) of the plasma source, for example by operating the main electrodes as cathodes. The term "cathode" is retained even though the voltage is alternating.

[0050] Processes that can be implemented using plasma include, for example, ion beam assisted deposition (IBAD), plasma etching (IBE, RIBE), plasma cleaning, plasma conditioning, and providing atomic state materials (e.g., oxygen, nitrogen).

[0051] The plasma forming gas may include, for example, one or more reactive gases and / or one or more working gases (e.g., an inert working gas). The reactive gas may include gaseous substances that react with the substrate and / or can be chemically incorporated into the substrate, such as oxygen, nitrogen, nitrogen oxides, carbon oxides, and / or ozone. For example, if a substrate capable of forming nitrides (e.g., AlNy) is used, the reactive gas may contain nitrogen or be formed from nitrogen. For example, if an oxide-forming substrate (e.g., AlOx) is used, the reactive gas may contain oxygen or be formed from oxygen. The reactive gas may include, for example, a mixture of multiple gases (e.g., oxygen and nitrogen) (a reactive mixture) or a mixture thereof, which react with the substrate and / or the deposited layer thereon. According to various embodiments, the reactive gas may include at least one gaseous substance such as oxygen, nitrogen, hydrogen sulfide, methane, gaseous hydrocarbons, fluorine, chlorine, or other gaseous substances.

[0052] According to various embodiments, the working gas may include an inert gaseous substance, in other words, one that participates in only a few chemical reactions. For example, the working gas may be defined and adapted to the substrate used. For example, the working gas may include a gas or mixture that does not react with the substrate (e.g., to form a solid). For example, the working gas may include one rare gas (e.g., helium, neon, argon, krypton, xenon, radon) or several rare gases. Plasma can be formed from the working gas. The chemical reactivity of the reactant gas may be higher than that of the working gas, for example, relative to the substrate.

[0053] In this document, "mounting mechanism" refers to a mechanism specifically designed for installation, such as mounting to a complementary mounting mechanism (also known as a mating mounting mechanism). During installation, multiple components are interconnected (e.g., rigidly connected) via their mounting mechanisms. This installation can be (e.g., only) form-fit and / or detachable. Preferably, the mounting mechanism may have a mounting surface (e.g., a mounting plane) that abuts against the complementary mounting surface of the mating mounting mechanism during installation. The mounting mechanism may, for example, have one or more (e.g., integral) mounting profiles (e.g., form-fit profiles), provided, for example, by means of the mounting mechanism's protrusions and recesses (e.g., protrusions or recesses). Mounting profiles include, for example, threads, mortises (e.g., keyways and / or dovetails), locking tabs, pins, tenons, etc.; protrusions and recesses include, for example, openings (e.g., through holes and / or threaded holes), pins (e.g., bolts).

[0054] In one embodiment, the mounting mechanism is configured as a flange, such as a vacuum flange. The flange may be configured for a rigid and / or detachable connection to another flange. Two interconnected flanges form a so-called flange connection. The flange may have a mounting surface (e.g., a mounting plane). Optionally, the flange may have an opening (also called a flange opening) surrounded by the mounting surface (e.g., along a closed path). A flange connection may include two flanges whose mounting surfaces are opposite each other, e.g., in contact with each other. The flange opening of the vacuum chamber housing may lead to, e.g., to, the interior of the vacuum chamber housing. Optionally, the flange may have a groove surrounding the flange opening, e.g., a groove along a closed path surrounding the flange opening and / or adjacent to the mounting surface. Optionally, a seal, e.g., a metal seal or a plastic seal, may be received in the groove. Optionally, the flange may have a protrusion providing the mounting surface. For example, the mounting surface may be projecting.

[0055] Complex processes may require more effective gas separation (gas isolation) than simply passing gas through a chamber wall with a substrate transfer port. For example, when a substrate is coated with a layer of different composition (e.g., different materials), due to varying process conditions (e.g., metallic coatings versus reactive / oxidizing coatings, or different reactive gas compositions, such as Ar / N2 versus Ar / O2), effective gas separation between process conditions is required to reduce the mixing of different process conditions (gas separation).

[0056] Gas separation refers to differences in gas pressure or gas composition between vacuum interconnected regions (e.g., gas separation regions). Components that facilitate gas separation (e.g., parts of a gas separation mechanism) can be configured such that differences in gas pressure or gas composition between vacuum interconnected regions (e.g., gas separation regions) can be maintained (e.g., kept stable). In other words, gas exchange between vacuum interconnected but gas-separated regions can be suppressed; for example, the higher the degree of gas separation between regions, the less gas exchange occurs.

[0057] Gas separation mechanisms (such as gas separation channels) typically achieve conductivity minimization (e.g., along the conveying path), meaning that conductivity decreases as it enters the gas separation mechanism along the conveying path and increases as it leaves. The term "conductivity" (e.g., gas conductivity or, more broadly, fluid conductivity) is a measure of how easily a substance can flow through it.

[0058] Conductivity represents the volume of material flowing through an object when subjected to a pressure difference (also known as a pressure gradient). Gas conductivity is inversely proportional to the flow resistance experienced by the material flowing through the object. The gas conductivity of a nozzle varies with the following parameters: the distance the material flows through the nozzle (also known as the nozzle orifice length), the cross-sectional area of ​​the nozzle orifice, and / or the shape of the nozzle orifice.

[0059] According to various embodiments, a vacuum chamber can be provided by a chamber housing containing one or more chambers. The chamber housing can be coupled (e.g., gas conduction coupling) to a pump assembly (e.g., a vacuum pump assembly) to provide negative pressure or vacuum (vacuum chamber housing) and can be stably configured to withstand the pressure effects of evacuation. The pump assembly (including at least one vacuum pump, such as a high-vacuum pump, or a turbomolecular pump) can pump out a portion of the gas from inside the processing chamber, for example, from the processing space. Accordingly, one or more vacuum chambers can be provided within the chamber housing. In other words, the chamber housing can be configured as a vacuum chamber housing, or a coated chamber can be configured as a vacuum chamber.

[0060] In this article, “vacuum pressure” refers to negative pressure within a vacuum region (i.e., pressure below 0.3 bar), such as pressure in the range of about 10 mbar to about 1 mbar (i.e., rough vacuum), or lower pressure, such as pressure in the range of about 1 mbar to about 10⁻³ mbar (i.e., medium vacuum), or lower pressure, such as pressure in the range of about 10⁻³ mbar to about 10⁻⁷ mbar (i.e., high vacuum), or lower pressure, such as pressure below high vacuum, such as below about 10⁻⁷ mbar.

[0061] According to various embodiments, the electrode can be a conductive electrode (e.g., with a conductivity greater than 10⁴ Siemens / meter) and / or a metallic electrode. The electrode may, for example, comprise or be made of metal and / or be plate-shaped.

[0062] Figure 1A A schematic side view or cross-sectional view of a plasma source 100a (preferably configured according to Examples 21 to 24) according to various embodiments is shown.

[0063] In one embodiment, plasma source operation includes: exciting plasma formation in a cavity 102h (also referred to as source cavity 102h), for example, a recess 104h (also referred to as plasma formation space 104h) of a protective structure 104 therein, so that plasma can be formed therein. Plasma formation can be achieved by using a high frequency as the operating frequency and / or by ionizing the plasma forming gas.

[0064] In one embodiment, the protective structure 104 includes a glass dish that includes a plasma formation space 104h. Alternatively or additionally, the plasma source has an outlet 108 that is connected from the emission direction 105 to the plasma formation space 104h and / or to the source cavity 102h.

[0065] In one embodiment, plasma formation is achieved by applying an operating frequency to the main electrode 106 during operation. The main electrode 106 may be arranged, for example, within the source cavity 102h and / or between the plasma source housing 102 and the protective structure 104. The operating frequency may be provided by a generator (also known as a high-frequency generator).

[0066] In one embodiment, the plasma source housing 102 is attached to a vacuum flange that surrounds the outlet 108 along a closed path. Alternatively or additionally, the plasma source housing 102 and / or the vacuum flange have a recessed mounting surface, to which the gate 112 may abut or be at least mounted. The gate 112 may have a plurality of through-holes along the emission direction 105 and / or may have a plurality of metal filaments defining the source cavity 102h. Alternatively or additionally, the gate 112 may abut a protective structure 104.

[0067] In one embodiment, the main electrode 106 is current-disconnected from the plasma source housing 102 and / or coupled to the generator. Alternatively or additionally, the plasma source housing 102 is grounded during operation.

[0068] The plasma source can be configured as a high-frequency excited plasma jet source, such as a magnetically assisted and / or filamentless plasma jet source. The gate 112 can be configured to neutralize material passing through the gate 112 (e.g., plasma-containing portions) during operation. If a gate is provided, the plasma source can, for example, emit a quasi-neutral plasma jet along the emission direction 105. "Quasi-neutral" can be understood as containing an average of equal amounts of ions and electrons.

[0069] The electrical power supplied by the high-frequency generator (not shown) can be coupled into the plasma via the main electrode 106. For this purpose, a high-frequency matching network (e.g., including one or more hollow coils and / or one or more capacitors) may optionally be provided to match the impedance of the plasma source with the impedance of the high-frequency generator.

[0070] In one embodiment, the first mounting mechanism 122 (also referred to as the gate mounting mechanism) is configured (preferably configured according to Example 21) as a flange for mounting the gate 112. It should be understood that when the plasma source is a gateless plasma source, the gate mounting mechanism is not provided. It should be understood that when the plasma source is a gated plasma source, the gate mounting mechanism can be removed.

[0071] The gate mounting mechanism 122 has, for example, a frame-like recess defined by a mounting surface facing the emission direction 105 that surrounds the outlet 108 along a closed path.

[0072] In one embodiment, the second mounting mechanism (also referred to as the housing mounting mechanism) is configured as an outwardly projecting vacuum flange that surrounds the outlet 108 and / or the gate mounting mechanism (if present) along a closed path. The vacuum flange may have a plurality of through holes extending along the emission direction 105 for mounting the housing mounting mechanism to the vacuum chamber housing. Furthermore, the vacuum flange has a sealing groove for accommodating a sealing ring.

[0073] Figure 1B A schematic side view or cross-sectional view of a plasma source 100b according to various embodiments (preferably according to embodiment 100a, such as according to example 21 or example 22) is shown, wherein the gate 112 is omitted or removed (hence the term gateless plasma source).

[0074] In one embodiment, the gateless plasma source according to Embodiment 100b is provided by removing the gate 112 (also referred to as the gate electrode 112) defining the cavity 104h, and the gate 112 is not installed and / or operated on the vacuum chamber housing. With this gateless plasma source according to Embodiment 100b, plasma is formed in the plasma forming space 104h exposed by the transport path 111, for example, when a substrate is transported along the transport path 111 by a transport device (not shown). Furthermore, particularly when plasma is formed in the plasma forming space 104h during operation, the walls within the vacuum chamber housing 812, preferably gas separation walls (see [reference needed]), contribute to the formation of plasma in the plasma forming space 104h. Figure 2C It can be used as a chamber electrode for a gridless plasma source. The chamber electrode can suppress plasma spatial diffusion, thereby extending the service life of the vacuum equipment, even when a grid is installed.

[0075] Figure 2A A schematic side view or cross-sectional view of a vacuum chamber device 200a according to various embodiments (preferably configured according to any one of embodiments 100a to 100b and / or according to embodiment 2) is shown.

[0076] In one embodiment, the vacuum chamber housing 812 has a vacuum flange on which a plasma source 150 (e.g., its vacuum flange) is mounted. Furthermore, the vacuum chamber housing 812 has a chamber opening 812o adjacent to the plasma source, such as its outlet 108. The chamber opening leads to the interior of the vacuum chamber housing 812 (also referred to as the housing interior). A transport path 111 may be arranged within the interior of the vacuum chamber housing 812.

[0077] In one embodiment, the chamber electrode 202 is arranged beside the chamber opening 812o and / or in a plate-like form. The chamber electrode 202 also contacts the wall (also known as the shell wall) of the vacuum chamber housing 812.

[0078] In one embodiment, a high-frequency transmission device 110 (also referred to as HF transmission device 110) couples the chamber electrode 202 to the plasma source housing 102, for example, in parallel with a vacuum chamber housing 812.

[0079] Alternatively or additionally, the HF transmission device 110 extends through a through hole in the vacuum chamber housing 812.

[0080] It is clear that the HF transmission device 110 reduces the impedance between the chamber electrode 202 and the plasma source housing 102. Therefore, the HF transmission device 110 and / or the chamber electrode 202 do not need to be galvanically isolated from the plasma source housing 102, and can also be optionally ohmically coupled to the plasma source housing 102.

[0081] Figure 2B A schematic equivalent circuit diagram of a vacuum apparatus 200b (preferably configured according to any one of embodiments 100a to 200a and / or Example 10) according to various embodiments is shown.

[0082] The vacuum apparatus can implement a plurality of parallel current paths that couple the chamber electrode 202 to the plasma source housing, wherein a first current path is implemented through the plasma source housing 102 and has a first impedance R1, and a second current path is implemented through the transmission device 110 and has a second impedance R2. For example, for high frequencies (such as the operating frequency), the first impedance and the second impedance may satisfy the following relationship: R2 < R1, for example R1 = 10k·R2, where k ≥ 0 (for example k ≥ 1, k ≥ 2, k ≥ 3 or k ≥ 4) and / or k ≤ 10.

[0083] Figure 2C A schematic diagram of a vacuum apparatus 200c (preferably configured according to any one of embodiments 100a to 200b and / or Example 13) according to various embodiments is shown.

[0084] In one embodiment, a gas separation channel (also referred to as a channel-type gas separation mechanism) has two plate-shaped gas separation walls 204a and 204b, a gas separation gap 206 (visually represented as a constricted structure) is formed between the two gas separation walls, and a transmission path 111 runs through the gas separation gap 206. The gas separation gap 206 can gas-separate two regions of the chamber interior 812h of the vacuum chamber housing 812 from each other. One or more of the two gas separation walls 204a and 204b can serve as the chamber electrode 202 coupled to the plasma source housing 102 via the transmission device 110, thereby operating as a chamber electrode.

[0085] In one embodiment, the vacuum device has two gas separation channels with a vacuum region (also called a processing area) arranged between them, adjacent to processing apparatus (e.g., including a plasma source and optional coating apparatus). For example, the vacuum device may have two processing areas with a gas separation channel arranged between them, and a gas separation gap 206 leading to the two processing areas.

[0086] Figure 3A A schematic side view or cross-sectional view of a vacuum chamber device 300a according to various embodiments (preferably according to any one of embodiments 100a to 200b and / or according to embodiment 6 or 7) is shown.

[0087] In one embodiment, the transmission device 110 (preferably according to Example 7 and / or Example 9) includes a copper rod 304 held by a vacuum feedthrough 302 disposed in a through-hole (also called a wall hole) of a vacuum chamber housing 812 (e.g., its chamber wall 812w). The copper rod 304 may extend through the vacuum feedthrough 302 and / or the chamber wall 812w. Furthermore, the transmission device 110 has two (e.g., in series) high-frequency stranded wires (HF wires) coupled together by the copper rod 304, wherein a first HF wire 306 is connected between the chamber electrode 202 and the copper rod 304, and a second HF wire 308 is connected between the plasma source housing 102 and the copper rod 304.

[0088] In one embodiment, the HF stranded wire comprises multiple metal monofilaments (e.g., made of copper), each monofilament optionally plated with, for example, a dielectric (e.g., a dielectric polymer) and / or silver. For example, each monofilament may consist of a single copper wire. The number of monofilaments N in each HF stranded wire may, for example, be N ≥ 10k, where k ≥ 0 (e.g., k ≥ 1, k ≥ 2, k ≥ 3, or k ≥ 4) and / or k ≤ 10. The larger N is, the lower the impedance of the HF stranded wire. Furthermore, the large number of monofilaments are woven or twisted together, thereby reducing the impedance of the HF stranded wire.

[0089] High-frequency currents flow almost exclusively on the surface of a single filament. For example, at a frequency of 10 MHz, the current density 20 μm below the surface is less than 37% of the current density on the outermost surface.

[0090] Figure 3B A schematic diagram of a vacuum device 300b according to various embodiments (preferably configured according to any one of embodiments 100a to 300a and / or embodiment 6 or 7) is shown.

[0091] In one embodiment, the vacuum device includes multiple components, such as two components, with a transport path 111 arranged between them, wherein each component includes:

[0092] -Plasma source 150;

[0093] - Gas separation walls 204a and 204b are configured as chamber electrodes 202;

[0094] -HF transmission device 110 is connected between plasma source housing 102 and gas separation wall 204a of plasma source 150, for example parallel to vacuum chamber housing 812.

[0095] In one embodiment, the plasma source 150 includes a generator 402 configured to generate an operating frequency and supply it to the main electrode 106. The generator 402 is coupled to (e.g., attached to) the plasma source housing 102, thus achieving a compact configuration.

[0096] Figure 4A A schematic cross-sectional perspective view of a vacuum chamber device 400a according to various embodiments (preferably according to any one of embodiments 100a to 300b and / or configured according to embodiment 6 or 7) is shown. As described herein, the gate 112 can be removed to provide a gateless plasma source.

[0097] Figure 4B The schematic detail of the transmission device 110 illustrates a vacuum device 400b according to various embodiments (preferably configured according to any one of embodiments 100a to 400a and / or according to embodiment 6 or 7).

[0098] In one embodiment, the vacuum feeder 302 has a flange 302f that is penetrated by a wall hole 302o and / or sealed by a cap 302d. The cap 302d is integrally connected to the copper rod 304.

[0099] In one embodiment, the transmission device 110 is provided with a threaded connector 404 for each HF stranded wire 306, through which the HF stranded wire 306 is coupled to the copper rod 304.

[0100] In one embodiment, the HF stranded wire 306 is configured as a flat stranded wire.

[0101] Figure 5A A schematic cross-sectional top view (viewed from the transport path direction) of a vacuum chamber device 500a according to various embodiments (preferably configured according to any one of embodiments 100a to 400b and / or according to embodiment 21 and / or embodiment 22) is shown. It should be understood that the gate 112 is removable and / or omitted when the plasma source is in operation.

[0102] In one embodiment, the gate 112 includes a frame structure through a via and multiple monofilaments forming the gate within the via.

[0103] Figure 5BA schematic detailed cross-sectional view of the conveying device shows a vacuum device 500b according to various embodiments (preferably configured according to any one of embodiments 100a to 400b and / or according to embodiment 2).

[0104] In one embodiment, the conveying device is configured as a turntable conveying device having a disc-shaped substrate carrier (also called a turntable) for conveying substrates along a circular conveying path. The turntable has multiple segments, each of which is arranged in a receiving gap 770. Furthermore, the conveying device (e.g., its substrate carrier holding mechanism 790) is provided with mounting bases 792 segment by segment, providing the receiving gap 770. The conveying device, for example, has multiple substrate carrier segments providing the turntable (not shown in the figure).

[0105] In one embodiment, the turntable is configured as a multi-segment turntable, with its substrate carrier segment 780 in an annular segment shape (e.g., fan-shaped). The conveying device has a rotor 720r that couples each substrate carrier segment to a mounting base 792 and grippers 770s (forming a receiving gap 770) for mounting and aligning the substrate carrier segments. The mounting base 792 is, for example, rotatably mounted via a pivot with a shaft. The pivot facilitates tilting and / or lifting of the substrate carrier, or generally, alignment of the substrate carrier. Additionally, extra screws may be provided to lock the final position of the pivot.

[0106] In one embodiment, a substrate carrier (e.g., a turntable) is arranged in and / or conveyed through the gas separation gap 206.

[0107] In one embodiment, the substrate carrier holding mechanism 790 has a first ring 766, the plurality of teeth of which form an end toothed disc.

[0108] Complementing this, the rotor (e.g., its hub) has a second ring 768 (also known as a gear ring), the multiple teeth of which form an end gear disc.

[0109] In one embodiment, the rotor is provided via a rotary feedthrough 720, whose stator 720s is attached to the vacuum chamber housing 712 (e.g., via screws), and whose rotor 720r is attached to the substrate carrier holding mechanism 790 (e.g., via screws). Optionally, the substrate carrier holding mechanism 790 may be coupled to the rotor 720r via an end gear, which facilitates centering and torque transmission.

[0110] During operation, substrates can be transported via substrate carriers (e.g., substrate carrier segments).

[0111] It should be understood that the aspects described herein can also be applied to continuous systems in which multiple conveyor rollers of the conveying device are arranged sequentially along the conveying path.

[0112] The following describes various embodiments relating to the above description and the accompanying drawings.

[0113] Example 1: During operation, for example when plasma is formed in the plasma formation space, the gate of the plasma source is omitted and / or removed. The gate mounting mechanism can then be exposed, for example, to the plasma. This extends service life, reduces costs, and improves maintenance convenience.

[0114] Example 2: Functionally, the gate of the plasma source is replaced with an HF capacitor, which includes chamber electrodes and is configured to limit plasma spatial diffusion near the plasma source. This prevents plasma diffusion caused by the high-frequency field leaving the plasma formation region when the gate is removed and / or eliminated.

[0115] Example 3: A grounded gas partition is provided as a gas barrier, which is ohmically coupled to the plasma source housing via a large-area stranded wire for high-frequency transmission. The stranded wire is configured as an HF transmitter.

[0116] Example 4: Provide an electrical vacuum feeder (at least via a copper rod) to connect two stranded wires.

[0117] Working Example 5: Providing a defined high-frequency field coupling / decoupling structure in the coating system suppresses the formation of parasitic plasmas.

Claims

1. A vacuum device, comprising: • Vacuum chamber shell (812); • A conveying device for conveying a substrate along a conveying path (111) within the vacuum chamber housing (812); • A plasma source (150) having a cavity (102h) in its plasma source housing (102), wherein the plasma source (150) is configured to generate plasma through the cavity (102h) and expose the transport path (111) to the plasma; • An electrode (202) is placed juxtaposed with the plasma source (150) inside the vacuum chamber housing (812); • A high-frequency transmission device (110) ohmically couples the plasma source housing (102) to the electrode (202).

2. The vacuum apparatus of claim 1, wherein, The high-frequency transmission device (110) includes: • A first wire, disposed within the vacuum chamber housing (812) and provided via a first high-frequency stranded wire; and / or • A second wire is arranged outside the vacuum chamber housing (812) and provided by a second high-frequency stranded wire.

3. The vacuum apparatus of claim 2, wherein, The vacuum chamber housing (812) has a shell opening, in which the vacuum feedthrough of the high-frequency transmission device (110) is arranged.

4. The vacuum device according to claim 3, wherein, The vacuum feeder includes a copper rod that extends through the housing opening and ohmically couples the first high-frequency stranded wire and the second high-frequency stranded wire of the high-frequency transmission device (110) to each other.

5. The vacuum device according to claim 1 or 2, wherein, The plasma source (150) includes a mounting mechanism having a mounting surface facing the transport path (111) for mounting a gate (112), and an opening is formed in the mounting mechanism leading to the cavity (102h).

6. The vacuum device according to claim 1 or 2, further comprising: A gas separation channel, wherein the transport path (111) is arranged between two gas separation walls, and one of the gas separation walls provides the electrode (202).

7. The vacuum device according to claim 1 or 2, wherein, At high frequencies, the impedance provided between the electrode (202) and the plasma source housing (102) through the high-frequency transmission device (110) is less than the impedance provided between the electrode (202) and the plasma source housing (102) through the vacuum chamber housing (812).

8. The vacuum device according to claim 1 or 2, wherein, The high-frequency transmission device (110) is separately disposed from the vacuum chamber housing (812).

9. A method for operating a vacuum apparatus according to claim 1 or 2, comprising: • Remove the gate (112) that defines the cavity (102h); • When the gate (112) is removed, plasma is formed in the cavity (102h) by plasma source (150).

10. An application of using a wall disposed within a vacuum chamber housing (812) as an electrode (202) of a plasma source (150), wherein a cavity (102h) is provided within the plasma source housing (102), wherein, The plasma source is configured to generate plasma through the cavity (102h), wherein the electrode (202) is ohmically coupled to the plasma source housing (102) by a high-frequency transmission device (110).

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