Light emitting diode and light emitting device

Abstract

The invention provides a light emitting diode and a light emitting device. The light-emitting diode comprises a substrate, a semiconductor lamination layer, a first metal protection layer and a second metal protection layer, the semiconductor lamination layer is arranged above the first surface of the substrate; the first metal protection layer is arranged between the substrate and the semiconductor lamination layer and is electrically connected with the second semiconductor layer; the second metal protection layer is arranged around the circumferential direction of the first metal protection layer, is located on the same layer with the first metal protection layer, and is provided with a discontinuous region. The second metal protection layer can prevent a chemical solution from permeating and diffusing to the edge of the light emitting diode to cause separation or stripping of an internal material layer, and can prevent metal transmission of a cutting channel when the light emitting diode is cut and prevent the insulation layer from being cut and cracked; the discontinuous region is arranged on the second metal protection layer, so that in the LLO stripping process, the whole-surface stress release caused by multi-film layer superposition can be slowed down, the warping degree is improved, and the yield and the reliability of the light emitting diode are improved.

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