一种化学气相沉积碳化硅环生产用沉积设备
By designing dispersion and adjustment mechanisms, the problem of uneven gas dispersion at different heights within the furnace body was solved, resulting in improved uniformity and efficiency of silicon carbide deposition and reduced substrate wear.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- 苏州鑫睿微电子设备有限公司
- Filing Date
- 2025-07-30
- Publication Date
- 2026-07-17
AI Technical Summary
In existing technologies, it is difficult for gas to disperse rapidly at different heights within the furnace, resulting in uneven silicon carbide deposition.
By employing a dispersion mechanism and an adjustment mechanism, and through the combination of a fixed pipe, a telescopic rod, a clamping seat, and a dispersion mechanism and an adjustment mechanism, uniform gas dispersion within the furnace body and effective fixation of the annular substrate are achieved, ensuring full contact between the gas and the substrate.
This achieves uniform gas dispersion within the furnace, improving the uniformity and efficiency of silicon carbide deposition and reducing wear on the substrate.
Smart Images

Figure CN120967320B_ABST