光芯片模场可视化成像方法及系统
By screening the optical chip mode field using spectral, temporal, angular, and polarization state characteristics, and employing wide-field or confocal imaging methods, the problems of accuracy and applicability in optical chip mode field measurement were solved, achieving high-precision two-dimensional and three-dimensional mode field imaging.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- PHOTONIC VIEW TECHNOLOGY CO LTD
- Filing Date
- 2025-08-22
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies have poor accuracy and limited applicability in measuring the mode field distribution of optical chips. SNOM technology cannot characterize the mode field distribution of any optical chip, especially it cannot measure the mode field distribution at different depths inside a three-dimensional integrated optical circuit chip.
A method for visualizing the mode field of an optical chip is provided. The method involves exciting the intrinsic radiation of the optical chip under test and screening its spectral characteristics, temporal spectral characteristics, angular spectral characteristics, and polarization state characteristics. The mode field distribution image is then acquired using a wide-field imaging method or a confocal scanning imaging method.
It achieves accurate characterization of the mode field of optical chips, has universality, can measure the mode field distribution of two-dimensional and three-dimensional chip structures, and is suitable for mode field imaging at different depths.
Smart Images
Figure CN120970978B_ABST