Method for calibrating the landing position of an electron beam of a semiconductor inspection apparatus and program product

Abstract

Embodiments of the present application provide a method and program product for calibrating the landing position of an electron beam of a semiconductor detection device. The method comprises: first determining an un-tilted detection coordinate corresponding to a target pattern. Based on a plurality of output parameter groups, a plurality of tilted detection coordinates are determined. Based on the un-tilted detection coordinate, the tilted detection coordinate, and a plurality of input parameter groups, a functional relationship is determined. Based on the functional relationship, the un-tilted target landing point on the target wafer before tilting can be accurately determined to correspond to the tilted landing point detection coordinate after tilting of the electron beam. The technical solution provided by the embodiments of the present application can significantly improve the prediction and calibration accuracy of the tilted landing point position. Compared with the manual identification and calculation method, the present application is more efficient and accurate, thereby making the wafer image collected in the image detection process based on electron beam tilting more accurate, providing a more practical reference for subsequent defect and anomaly analysis of the target wafer, and improving the detection efficiency and accuracy.

Description

Technical Field

[0001] This application belongs to the field of chip testing technology, and in particular relates to a method and program product for calibrating the electron beam landing point of semiconductor testing equipment. Background Technology

[0002] In the semiconductor chip manufacturing process, electron microscopes (EM) are widely used for high-precision dimensional and defect inspection of wafers. Electron beam tilt detection is a detection and imaging method that acquires high-precision images of different depth positions on the wafer by changing the incident angle of the electron beam. It can be applied to electron microscopes such as high-voltage scanning electron microscopes (HVSEM) and transmission electron microscopes (TEM).

[0003] In electron beam tilting imaging or wafer inspection, the precise correspondence between the actual and predicted electron beam landing points after tilting is a crucial criterion for evaluating the accuracy of the acquired images. Currently, the pre-determination and calculation of compensation amounts for the electron beam landing points before and after tilting are mostly achieved by manually observing the corresponding positions of special patterns on the wafer surface before and after tilting, and determining the compensation value based on the positional changes. This manual determination method cannot effectively guarantee accuracy and has low processing efficiency, which can affect the accuracy of the acquired images before and after tilting.

[0004] Therefore, how to accurately calibrate the landing point of the electron beam after it is tilted is an important problem that urgently needs to be solved. Summary of the Invention

[0005] This application provides a method and program product for calibrating the electron beam landing point position of a semiconductor testing device, which can efficiently achieve accurate calibration of the landing point position after the electron beam is tilted.

[0006] In a first aspect, embodiments of this application provide a method for calibrating the electron beam landing point position of a semiconductor detection device, including:

[0007] When the electron beam is directed toward the target pattern along the normal of the sample wafer, the untilted detection coordinates of the target pattern in the wafer coordinate system are obtained. The wafer coordinate system is a coordinate system established with the reference point on the sample wafer as the origin.

[0008] Multiple sets of input parameters are acquired, and the electron beam is controlled to tilt sequentially to multiple tilt states according to the multiple sets of input parameters. In each tilt state, the semiconductor detection device is controlled to move the sample wafer so that the electron beam falls on the target pattern, and the tilt detection coordinates of the target pattern in the wafer coordinate system are acquired.

[0009] Based on the untilted detection coordinates, multiple tilted detection coordinates, and multiple sets of input parameters, a functional relationship characterizing the relationship between the tilted detection coordinates and the sets of input parameters is determined.

[0010] Secondly, embodiments of this application provide an electron beam landing point calibration device for a semiconductor detection equipment, comprising:

[0011] The untilted coordinate determination unit is used to obtain the untilted detection coordinates of the target pattern in the wafer coordinate system when the electron beam is directed toward the target pattern along the normal of the sample wafer. The wafer coordinate system is a coordinate system established with a reference point on the sample wafer as the origin.

[0012] The tilted coordinate determination unit is used to acquire multiple sets of input parameters and control the electron beam to tilt to multiple tilt states in sequence according to the multiple sets of input parameters. In each tilt state, the semiconductor detection device is controlled to move the sample wafer so that the electron beam falls on the target pattern and the tilted detection coordinates of the target pattern in the wafer coordinate system are acquired.

[0013] The relationship determination unit is used to determine the functional relationship representing the relationship between the tilted detection coordinates and the input parameter sets based on the untilted detection coordinates, multiple tilted detection coordinates, and multiple input parameter sets.

[0014] Thirdly, embodiments of this application provide an electronic device, which includes a processor, a memory, and a program or instructions stored in the memory and executable on the processor. When the program or instructions are executed by the processor, they implement the steps of the electron beam landing point calibration method of any semiconductor detection device in the embodiments of this application.

[0015] Fourthly, embodiments of this application provide a readable storage medium storing a program or instructions, which, when executed by a processor, implement the steps of the electron beam landing point calibration method for any semiconductor detection device according to embodiments of this application.

[0016] Fifthly, embodiments of this application provide a computer program product in which instructions are executed by a processor of an electronic device, enabling the electronic device to perform the steps of the electron beam landing point calibration method of any semiconductor detection device according to embodiments of this application.

[0017] The technical solutions provided by the embodiments of this application have at least the following beneficial effects:

[0018] This application provides a method for calibrating the electron beam landing point position of a semiconductor inspection device, comprising: first, determining the untilted detection coordinates of the target pattern in the wafer coordinate system when the electron beam is directed toward the target pattern along the normal of the sample wafer; then, controlling the electron beam to sequentially tilt to multiple tilt states based on multiple sets of input parameters; and in each tilt state, controlling the semiconductor inspection device to move the sample wafer so that the electron beam lands on the target pattern, thereby determining the tilted detection coordinates of the target pattern in the wafer coordinate system.

[0019] Based on the untilted detection coordinates, multiple tilted detection coordinates, and multiple sets of input parameters, a functional relationship characterizing the relationship between the tilted detection coordinates and the input parameter sets can be accurately determined. This functional relationship can then be used to calibrate the actual tilted detection coordinates.

[0020] The technical solution provided in this application can accurately determine the functional relationship between the coordinates of the landing point before and after tilting based on multiple sets of input parameters, significantly improving the calibration accuracy of the landing point position after tilting. Compared to manual identification and calculation methods, the technical solution provided in this application is more efficient and accurate, resulting in more accurate wafer images acquired during the electron beam tilt-based image detection process. This provides a more practical reference for subsequent defect and anomaly analysis of the target wafer, improving the processing efficiency and detection accuracy of the detection process.

[0021] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0022] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 A flowchart illustrating an electron beam landing point calibration method for a semiconductor detection device according to an embodiment of this application;

[0024] Figure 2(a) is one of the schematic diagrams of a process for determining a functional relationship provided in an embodiment of this application;

[0025] Figure 2(b) is a second schematic diagram of a process for determining a functional relationship according to an embodiment of this application;

[0026] Figure 3 A schematic diagram illustrating the positional relationship between a target wafer coordinate system and a platform coordinate system, provided in one embodiment of this application;

[0027] Figure 4 A schematic diagram of the structure of an electron beam landing point calibration device for a semiconductor detection equipment provided in another embodiment of this application;

[0028] Figure 5 This is a schematic diagram of the hardware structure of an electron beam landing point calibration device for a semiconductor testing device provided in another embodiment of this application. Detailed Implementation

[0029] The features and exemplary embodiments of various aspects of this application will be described in detail below. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain this application and not to limit it. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples.

[0030] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0031] In the semiconductor chip manufacturing process, electron microscopes are very important and practical inspection equipment. For example, high-voltage scanning electron microscopes and transmission electron microscopes are widely used for high-precision dimensional measurement and defect detection of wafers.

[0032] Among the many wafer inspection methods, electron beam tilting inspection is a key and practical method. By changing the incident angle of the electron beam, it can acquire high-resolution images of the same location on the wafer at different depths, providing practical data for in-depth analysis of the wafer's three-dimensional structure and internal defects.

[0033] Currently, ensuring the precise correspondence between the actual and theoretically predicted electron beam landing points after tilting is a crucial prerequisite for guaranteeing the accuracy of acquired wafer images. At present, most methods for determining the compensation amount for electron beam landing points before and after tilting rely on manually observing the positional shifts of specific patterns on the wafer surface before and after the electron beam tilts, and then manually calculating the position compensation value based on the observed positions.

[0034] This method not only suffers from subjective judgment and potential visual errors, making it difficult to guarantee the accuracy of position prediction after tilting, but also has relatively low overall processing efficiency. Using the position compensation value determined by this method for predicting and accurately calibrating the landing point after tilting may directly lead to inaccurate image positions before and after tilting, severely affecting the reliability and practical value of the acquired data during operations such as wafer defect detection, and ultimately impacting the accuracy of the final detection results.

[0035] To address the aforementioned issues, this application provides a method and program product for calibrating the electron beam landing point position of a semiconductor inspection device. The method includes: determining the untilted detection coordinates of the target pattern in the wafer coordinate system when the electron beam is directed towards the target pattern along the normal of the sample wafer; controlling the electron beam to sequentially tilt to multiple tilt states based on multiple input parameter sets; and controlling the semiconductor inspection device to move the sample wafer in each tilt state so that the electron beam lands on the target pattern, thereby determining the tilted detection coordinates of the target pattern in the wafer coordinate system.

[0036] Based on the untilted detection coordinates, multiple tilted detection coordinates, and multiple sets of input parameters, a functional relationship characterizing the relationship between the tilted detection coordinates and the input parameter sets can be accurately determined. Based on this determined functional relationship, the actual tilted detection coordinates can be calibrated.

[0037] The technical solution provided in this application can accurately determine the functional relationship between the coordinates of the landing point before and after tilting based on multiple preset input parameter sets, thereby significantly improving the calibration accuracy of the landing point position after tilting. Compared with manual identification and calculation methods, the technical solution provided in this application is more efficient and accurate in calibrating the landing point position after tilting, making the wafer image acquired in the electron beam tilt-based image detection process more accurate. This provides a more practical reference for subsequent defect and anomaly analysis of the target wafer, improving the processing efficiency and detection accuracy of the detection process.

[0038] Regarding the execution entity used in the technical solutions provided in the embodiments of this application, it can specifically be a terminal device connected to semiconductor testing equipment, such as a desktop computer or laptop computer, or a remote device, such as a server. In addition, the execution entity used in the technical solutions provided in the embodiments of this application can also be a software execution entity, such as a client or software program installed on a terminal device. The specific type of execution entity used in applying the technical solutions provided in the embodiments of this application is not strictly limited here; it can be flexibly selected and applied according to the actual application scenario and actual needs.

[0039] The electron beam landing point calibration method and corresponding application scenarios of the semiconductor detection equipment provided in the embodiments of this application are not strictly and specifically limited in this application, and can be flexibly adjusted and applied according to actual needs.

[0040] For example, in real-world scenarios involving wafer surface topography acquisition and inspection for wafers with gate structures such as three-dimensional fins, the sidewalls of the three-dimensional fin gate structure are nearly vertical. Electron beam tilt detection methods are required to acquire and determine the true sidewall contours and critical bottom dimensions.

[0041] The technical solution provided in this application can determine the untilted detection coordinates of the target pattern (e.g., a cross-shaped pattern) in the wafer coordinate system when the electron beam is perpendicularly incident on a wafer with a gate structure, and the tilted detection coordinates of the target pattern in the wafer coordinate system under different tilt states based on multiple sets of input parameters. Then, based on the untilted detection coordinates, the tilted detection coordinates in each tilt state, and the multiple sets of input parameters, the functional relationship representing the relationship between the tilted detection coordinates and the input parameter sets for the wafer with the gate structure can be accurately determined.

[0042] In subsequent actual testing, the tilted landing point of the electron beam on the wafer can be accurately calibrated based on the actual input parameter set and the functional relationship determined by the technical solution of this application. The technical solution provided by the embodiments of this application can achieve efficient and accurate prediction and calibration of the tilted landing point position, improve the accuracy and practicality of the electron beam tilt detection process, and enhance the accuracy and reliability of the acquired images of the wafer with the gate structure, providing a practical basis for subsequent wafer defect and problem analysis.

[0043] It should be noted that the application scenarios described in the above embodiments of this application are for the purpose of more clearly illustrating the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions provided by the embodiments of this application. Those skilled in the art will understand that with the emergence of new application scenarios, the technical solutions provided by the embodiments of this application are also applicable to similar technical problems. The electron beam landing point calibration method for semiconductor detection equipment provided in the embodiments of this application can be applied to various practical scenarios that require calibration of the electron beam landing point position after tilting.

[0044] Figure 1 This is a flowchart illustrating a method for calibrating the electron beam landing point of a semiconductor detection device according to an embodiment of this application.

[0045] like Figure 1 As shown in the figure, the electron beam landing point calibration method of the semiconductor detection device provided in this application embodiment includes steps S101 to S105.

[0046] S101: When the electron beam is directed toward the target pattern along the normal of the sample wafer, obtain the untilted detection coordinates of the target pattern in the wafer coordinate system.

[0047] S102: Acquire multiple sets of input parameters, and control the electron beam to tilt to multiple tilt states in sequence according to the multiple sets of input parameters. In each tilt state, control the semiconductor detection device to move the sample wafer so that the electron beam falls on the target pattern, and acquire the tilt detection coordinates of the target pattern in the wafer coordinate system.

[0048] S103: Based on the untilted detection coordinates, multiple tilted detection coordinates, and multiple input parameter sets, determine the functional relationship characterizing the relationship between the tilted detection coordinates and the input parameter sets.

[0049] In step S101, the technical solution provided in this application embodiment can determine the non-tilted detection coordinates of the target pattern on the sample wafer when the electron beam is directed toward the target pattern of the sample wafer along the normal of the sample wafer.

[0050] The electron beam can be emitted by an electron microscope capable of tilting, such as a scanning electron microscope (SEM), a high-voltage scanning electron microscope (HVSEM), or a scanning transmission electron microscope (STEM), and projected onto the sample wafer mounted on a platform. The specific type of electron microscope emitting the electron beam is not strictly limited in this embodiment and can be flexibly selected according to actual needs and application scenarios. The electron microscope emitting the electron beam is an important component of semiconductor inspection equipment, and together with the platform carrying the wafer under inspection, it forms a semiconductor inspection device with precise wafer inspection capabilities.

[0051] The target graphic is a special shape on the sample wafer used for calibration during the process of determining the functional relationship between the coordinates and the input parameter set after the electron beam tilt is determined. Specifically, it can be a cross, rectangle, circle, L-shape, or other shapes on the sample wafer. The specific shape of the target graphic is not strictly limited here; it can be flexibly selected according to actual needs and the specific wafer pattern on the sample wafer.

[0052] Untilted detection coordinates represent the coordinates of the target pattern detected by the electron beam on the sample wafer in the wafer coordinate system before the electron beam is tilted. When the electron beam is directed towards the sample wafer along the normal direction, the angle between the electron beam and the sample wafer surface is a right angle. By moving the platform carrying the sample wafer in the semiconductor inspection equipment, the electron beam is accurately positioned on the target pattern on the sample wafer. While capturing an image, the coordinates of the target pattern in the corresponding wafer coordinate system of the sample wafer are determined and used as the untilted detection coordinates, such as (x, y).

[0053] The wafer coordinate system is a two-dimensional Cartesian coordinate system established with a preset reference point on the sample wafer as the origin. The selection of the reference point is not strictly limited in this embodiment and can be the center point of the sample wafer or other reference points. The untilted detection coordinates refer to the coordinates of the target pattern on the sample wafer in the wafer coordinate system before the electron beam is tilted.

[0054] In step S102, the technical solution provided in this application embodiment can control the electron beam to tilt to multiple tilt states in sequence based on multiple preset input parameter values.

[0055] Furthermore, in each tilt state, the sample wafer can be moved by manipulating the platform in the semiconductor inspection equipment, so that the electron beam can be accurately positioned on the target pattern after tilting, thereby determining the tilt detection coordinates of the electron beam on the target pattern in the wafer coordinate system after tilting in each tilt state.

[0056] In one embodiment provided in this application, each input parameter group may include an input value for the tilt angle, an input value for the azimuth angle, and a light source height. The tilt angle can represent the angle between the electron beam and the normal of the sample wafer. The azimuth angle can represent the angle formed by the line segment connecting the landing point of the tilted electron beam to the origin of the wafer coordinate system of the sample wafer, and the preset coordinate axis (horizontal axis or vertical axis) of the wafer coordinate system. The light source height can represent the vertical distance from the electron light source emitting the electron beam in the electron microscope of the semiconductor inspection equipment to the surface of the sample wafer.

[0057] Each input parameter set contains one tilt angle, one azimuth angle, and one light source height. The number of input parameter sets can be determined by the number of tilt angles, azimuth angles, and light source heights, respectively. For example, it can be calculated using the Cartesian product, where the number of input parameter sets is the product of the number of tilt angles, azimuth angles, and light source heights. The determined multiple input parameter sets contain input parameter sets consisting of each tilt angle, each azimuth angle, and each light source height.

[0058] Regarding the number of tilt angles, azimuth angles, and light source heights, in one embodiment provided in this application, multiple tilt angles can be determined based on a preset tilt angle range and tilt angle step size. The tilt angle step size can be understood as the angle difference between each tilt angle and its adjacent tilt angle.

[0059] For example, the normal of the untilted detection coordinates of the target pattern in the wafer coordinate system can be used as the reference position with a tilt angle of 0°. The direction away from the untilted position on the projection of the electron beam onto the sample wafer surface after tilting, and the direction in which the projection extends from the untilted position, can be used as the positive and negative directions of the electron beam tilt angle, respectively.

[0060] Based on this, the tilt angle range can be set to -1° to 1°, and the tilt angle step size can be set to 0.1°. Multiple tilt angles can include -1°, -0.9°, -0.8°, ..., 0.8°, 0.9° and 1°, thus determining 20 tilt angles excluding 0°.

[0061] Similarly, multiple electron beam azimuth angles can be determined based on a preset azimuth angle range and azimuth angle step size. The azimuth angle step size is similar to the tilt angle step size mentioned above, and can be understood as the angular difference between each electron beam azimuth angle and the adjacent electron beam azimuth angle.

[0062] For example, the electron beam azimuth angle range can be from 0° to 360°, and the azimuth angle step size can be set to 30°. Multiple electron beam azimuth angles can include 0°, 30°, 60°, ..., 300°, 330° and 360°, which can determine 13 electron beam azimuth angles with an azimuth angle step size of 30°.

[0063] In addition to the tilt angle and azimuth angle, this application also considers that electron microscopes emitting electron beams may have different light source heights due to factors such as different types of wafers and magnification. The difference in light source height can cause changes in the detection coordinates of the target pattern on the sample wafer after the electron beam is tilted.

[0064] Based on this, the light source height is added to the input parameter group, so that the subsequent calibration of the landing point after the electron beam is tilted can cover the landing point calibration under different light source heights. In one embodiment provided in this application, a preset range of light source height changes can be divided according to a preset light source height change step size to determine multiple changed light source heights.

[0065] The range of light source height variation can be used to represent the range of distance variation of the light source height of an electron microscope when the non-tilted detection coordinates are determined. The step size of the light source height variation can represent the height difference between each light source height and the adjacent light source height in multiple changed light source heights.

[0066] For example, the light source height variation range can be set to ±0.03mm, and the light source height variation step can be set to 0.01mm. The changed light source height can be determined by increasing or decreasing the original light source height by 0.01mm, 0.02mm, and 0.03mm, respectively, thus obtaining 6 changed light source heights.

[0067] Based on the above process of determining the input parameters, multiple tilt angles, multiple azimuth angles, and multiple light source heights can be obtained. Each tilt angle, each azimuth angle, and each light source height can be combined to determine multiple sets of input parameters. Assuming the number of tilt angles is m, the number of azimuth angles is n, and the number of light source heights is v, the number of output parameter sets can be m*n*v.

[0068] Based on the determined set of multiple input parameters, the electron beam can be tilted at different tilt angles, azimuth angles, and light source heights, allowing it to sequentially tilt to multiple tilt states. However, after the electron beam is tilted, there will be a significant deviation between the detected coordinate information and the actual coordinate information on the wafer coordinate system.

[0069] Therefore, in each tilt state, the sample wafer can be moved by manipulating the platform in the semiconductor detection equipment, so that the electron beam can be repositioned on the same target pattern on the sample wafer after tilting, thereby determining the post-tilt detection coordinates of the target pattern in the wafer coordinate system in that tilt state. After tilting multiple times according to multiple sets of input parameters, multiple post-tilt detection coordinates of the target pattern corresponding to different tilt states can be obtained.

[0070] It should be noted that the tilt states corresponding to the untilted detection coordinates and the tilted detection coordinates are all relative to the electron beam. The essence of each coordinate data is the position of the target pattern on the wafer coordinate system detected by the electron beam before and after tilting. The actual position of the target pattern on the sample wafer does not change; what changes is the coordinate obtained by detecting the same target pattern before and after the electron beam tilt.

[0071] Based on the above embodiments, the post-tilt detection coordinates can be determined for multiple tilt angles, multiple azimuth angles, and multiple light source heights, significantly increasing the data volume. This provides practical data for determining the functional relationship between the post-tilt landing point coordinates and the input parameter set. This effectively improves the accuracy and practicality of the functional relationship, and also enhances the prediction efficiency and accuracy of the post-tilt landing point position prediction process in actual electron beam tilt detection, ensuring the practicality and reliability of the electron beam tilt detection process.

[0072] In step S103, the technical solution provided in this application embodiment can accurately determine the functional relationship characterizing the relationship between the tilted detection coordinates and the input parameter set based on the untilted detection coordinates and multiple tilted detection coordinates determined in the above steps.

[0073] Among them, the functional relationship can be used to determine the compensation amount of the detection coordinates before and after tilting for different input parameter groups. Based on the landing point coordinates before tilting and the compensation amount, the corresponding landing point detection position after tilting can be further calibrated.

[0074] Specifically, in one embodiment provided in this application, the functional relationship includes a first functional relationship characterizing the relationship between the detected coordinates after tilting and the tilt angle and azimuth angle at each light source height, and a second functional relationship characterizing the relationship between each coefficient in the first functional relationship and the light source height.

[0075] The first functional relationship can include the coordinate distance change relationship: R = R(θ), and the detection position azimuth angle change relationship: Φ = Φ(α).

[0076] Where R is the coordinate distance between the detected coordinates after tilting and the detected coordinates before tilting, θ is the tilt angle, Φ is the angle between the line segment connecting the detected coordinates after tilting and the detected coordinates before tilting and the coordinate axis (horizontal axis or vertical axis) with the detected coordinates before tilting as the origin, which is the azimuth angle between the detected positions before and after tilting, and α is the azimuth angle in the input parameter group.

[0077] In each tilt state, the tilt detection coordinates of the target pattern in the wafer coordinate system are determined by the tilted electron beam as (x i y i The untilted detection coordinates of the target image are (x, y). Based on this, the coordinate distance... The azimuth angle of the detection position is Φ = arctan(ΔY / ΔX), where ΔX = |xx| i |,ΔY=|yy i |

[0078] The relationship between coordinate distance change and the relationship between detection position azimuth change together form the first functional relationship, which means that under the same light source height, the coordinate distance R between the tilted detection coordinate and the non-tilted detection coordinate, as well as the detection position azimuth Φ between the tilted detection coordinate and the non-tilted detection coordinate, can be accurately determined based on the tilt angle θ and azimuth angle α in the output parameter set.

[0079] Furthermore, when both the coordinate distance and the azimuth of the detection position are known, the coordinate compensation amount of the detection coordinates before and after tilting can be accurately determined using calculation methods such as trigonometric functions. Therefore, in this embodiment, based on the determined coordinate distance change relationship and the position azimuth change relationship, the coordinate transformation relationship before and after tilting used to determine the detection coordinate compensation amount can be further derived and calculated.

[0080] Regarding the specific determination process of the aforementioned coordinate distance change relationship and position azimuth angle change relationship: First, regarding the coordinate distance change relationship, in one embodiment provided in this application, the coordinate distance corresponding to each tilt angle can be determined based on the untilted detection coordinates and multiple tilted detection coordinates corresponding to the target graphic.

[0081] Then, based on each coordinate distance and the corresponding tilt angle, a function can be fitted to determine a fitting function that represents the relationship between the tilt angle and the coordinate distance. The determined fitting function can be used as the aforementioned coordinate distance variation relationship. In one embodiment provided in this application, the coordinate distance variation relationship can be specifically referred to as shown in formula (1):

[0082] R = kθ + b (Formula (1))

[0083] Where R represents the coordinate distance, θ represents the tilt angle of the electron beam, k is the coefficient of the fitted tilt angle θ, and b is the fitted constant term, i.e., θ 0 The coefficients. For each tilt angle θ, the corresponding coordinate distance R can be calculated based on the detected coordinates before and after tilting. Then, based on multiple tilt angles θ and the corresponding coordinate distances R, a fitting function as shown in the above formula (1) can be obtained as the coordinate distance change relationship.

[0084] It should be noted that the above formula (1) is only an example of the coordinate distance change relationship in the embodiments of this application, and does not imply any limitation on the specific form of the coordinate distance change relationship. The embodiments of this application do not strictly limit the specific determination method of the coordinate distance change relationship or the function representation form, and can be flexibly set according to actual needs and application scenarios.

[0085] The above embodiments can accurately determine the coordinate distance change relationship, which represents the relationship between the tilt angle and the coordinate distance between the detected coordinates before and after tilting. This relationship can be used to accurately determine the coordinate distance between the landing point after tilting and the landing point before tilting when predicting the landing point coordinates. The determined coordinate distance change relationship can cover multiple tilt angles simultaneously, significantly improving processing efficiency and application scope compared to manual observation.

[0086] In addition, regarding the position azimuth angle change relationship in the first functional relationship, in one embodiment provided in this application, the position azimuth angle corresponding to each azimuth angle of the electron beam can be determined based on the untilted detection coordinates and multiple tilted detection coordinates corresponding to the target graphic.

[0087] Then, based on each position azimuth and its corresponding azimuth, a functional relationship can be fitted to determine the fitting function that represents the relationship between the azimuth and the position azimuth, which serves as the aforementioned position azimuth variation relationship. In one embodiment provided in this application, the position azimuth variation relationship can be specifically referred to as shown in formula (2):

[0088] Φ=α+β Formula (2)

[0089] Where Φ represents the position azimuth angle, α represents the electron beam azimuth angle, and β is the fitted constant term, i.e., α 0 The coefficients. For each azimuth angle α, the corresponding position azimuth angle Φ is determined by the detection coordinates of the target pattern on the sample wafer before and after tilting. Then, based on multiple azimuth angles α and the corresponding position azimuth angles Φ, a fitting function as shown in the above formula (2) can be obtained as the position azimuth angle variation relationship.

[0090] It should also be noted that formula (2) above is similar to formula (1), and is only used to illustrate the position azimuth angle change relationship in the embodiments of this application, and does not imply any limitation on the specific form of the position azimuth angle change relationship. The embodiments of this application do not strictly limit the specific determination method of the position azimuth angle change relationship or the function form, and can be flexibly set according to actual needs and application scenarios.

[0091] Based on the above embodiments, the change in position azimuth angle, representing the relationship between the detection coordinates before and after tilting and the azimuth angle after the electron beam tilts, can be accurately determined. In the subsequent prediction of the landing point coordinates after tilting, the position azimuth angle of the landing point coordinates after tilting relative to the landing point coordinates before tilting can be determined efficiently and accurately. The position azimuth angle change relationship determined by the embodiments of this application can cover the relationship between different azimuth angles of the electron beam and their corresponding position azimuth angles, which greatly improves processing efficiency and determination accuracy compared to manual observation and determination.

[0092] The coordinate distance change relationship and the position azimuth angle change relationship can be accurately determined through the above embodiments, and the first functional relationship can be obtained, specifically, for example, formula (1) and formula (2) in the above embodiments. Then, based on the determined first functional relationship, the coordinate transformation relationship before and after tilting can be derived and determined.

[0093] In one embodiment provided in this application, the coordinate transformation relationship before and after tilting for determining the detection coordinate compensation amount before and after tilting can be specifically referred to as shown in formula (3):

[0094]

[0095] Where Δx and Δy are the coordinate compensation amounts of the tilted detection coordinates relative to the untilted detection coordinates, and R, Φ, k, θ, b, α and β are the corresponding parameters and variables in the above formulas (1) and (2).

[0096] Based on the coordinate distance change relationship (formula (1)) and position azimuth change relationship (formula (2)) determined in the above embodiments, the coordinate transformation relationship before and after tilting as shown in formula (3) can be derived. The determined position transformation relationship before and after tilting can be used for subsequent accurate prediction of the landing point coordinates after tilting. For example, by substituting the tilt angle and azimuth angle of the electron beam into the formula in formula (3) of this embodiment, the coordinate compensation amount of the landing point coordinates after tilting relative to the landing point detection coordinates before tilting can be accurately calculated. Based on the coordinate compensation amount and the non-tilted landing point detection coordinates, the landing point detection coordinates after tilting can be accurately calculated.

[0097] Regarding the second functional relationship mentioned above, in another embodiment provided in this application, the method in the above embodiment can determine the first functional relationship corresponding to each light source height for different multiple light source heights.

[0098] Then, based on the height of each light source and the corresponding first functional relationship, the functional relationship between the height of the light source and the coefficients of each function in the first functional relationship can be determined, which serves as the second functional relationship.

[0099] Taking formulas (1) and (2) in the above embodiments as examples, let the height of the light source be H. After determining the coordinate distance change relationship and the position azimuth angle change relationship corresponding to different light source heights, the functional relationship between the coefficients k and b in the coordinate distance change relationship and the light source height H, and the functional relationship between the coefficient β in the position azimuth angle change relationship and the light source height H can be determined according to each light source height and the corresponding relationship function.

[0100] In this embodiment, the specific function type and expression form corresponding to the functional relationship between the light source height and the coefficients in the first functional relationship are not strictly limited. In some embodiments, the functional relationship between the light source height and the coefficients in the first functional relationship can be a linear relationship, such as the linear function in formulas (1) and (2), or it can be a non-linear relationship, such as a quadratic function. Specifically, it can be flexibly selected and set according to the application scenario and actual needs.

[0101] The determined second functional relationship between the light source height H and each function coefficient can be used to quickly and accurately determine the corresponding first functional relationship based on the light source height when predicting the landing point after tilting. This effectively expands the application range of the solution and significantly improves the prediction efficiency of the landing point detection coordinate prediction process after tilting.

[0102] The above describes the specific process for determining the functional relationship between the detected coordinates and the input parameter set after tilting, as described in the embodiments of this application. To facilitate understanding of the overall process of determining the functional relationship, the following examples illustrate the process using three-dimensional schematic diagrams before and after electron beam tilting, and a top-view two-dimensional schematic diagram. See Figures 2(a) and 2(b) for details.

[0103] Figures 2(a) and 2(b) are schematic diagrams illustrating the process of determining a functional relationship according to an embodiment of this application.

[0104] Wherein, 201 is the electron beam incident perpendicularly on the sample wafer surface, 202 is the tilted electron beam with tilt angle θ and azimuth angle α, 203 is the sample wafer surface, 204 is the untilted detection coordinates (x1, y1), 205 is the tilted detection coordinates (x2, y2) with tilt angle θ and azimuth angle α, 206 is the coordinate distance R corresponding to the tilt angle θ, 207 is the position azimuth angle Φ corresponding to the azimuth angle α, 208 is the transverse axis direction of the reference point on which the azimuth angle α of the sample wafer is based, and 209 is the electron optical system (EOS) that emits the electron beam in the electron microscope.

[0105] Figure 2(a) is a three-dimensional schematic diagram of the coordinates of the landing point of the electron beam before and after tilting after being emitted from the electron optical system 209. It should be noted in advance that the difference in the landing point coordinates on the sample wafer 203 before and after tilting shown in Figure 2(a) and Figure 2(b) is for the purpose of understanding the change in the detection position before and after tilting. In the actual processing, the actual position of the target pattern on the sample wafer 203 does not change before and after tilting.

[0106] As shown in Figure 2(a), the detection coordinates changed significantly before and after the electron beam was tilted. Based on the untilted detection coordinates 204(x1, y1) and the tilted detection coordinates 205(x2, y2), as well as the corresponding tilt angle θ and azimuth angle α, the coordinate distance change relationship (the function relationship between the tilt angle θ and the coordinate distance 206(R)) and the position azimuth angle change relationship (the function relationship between the azimuth angle α and the position azimuth angle 207(Φ)) shown in the above embodiments can be determined using the method in the above embodiments, thus obtaining the first functional relationship. Furthermore, the coordinate transformation relationship before and after tilting can be determined based on the first functional relationship (for example, formula (3) in the above embodiments).

[0107] Figure 2(b) is a two-dimensional top-view schematic diagram of the coordinates of the landing point before and after the electron beam is tilted. As shown in Figure 2(b), when the reference direction on which the azimuth angle α and the position azimuth angle Φ are based is different, there may be an angle difference, such as β in the above formula (2). Through the above embodiments, the angle compensation value of the position azimuth angle Φ relative to the azimuth angle α can be accurately calculated based on the azimuth angle α and the corresponding position azimuth angle Φ, thereby accurately determining the position azimuth angle change relationship.

[0108] Furthermore, as shown in Figure 2(a), the distance from the electron beam 201 incident along the normal direction on the sample wafer surface from the electron microscope to the sample wafer surface 203 is the light source height H. Through the above embodiments, a first functional relationship corresponding to different light source heights H can be determined, and subsequently, a second functional relationship representing the relationship between the light source height H and the coefficients of each function in the first functional relationship can be determined. This effectively expands the application range of the landing point coordinate calibration method while significantly improving the processing efficiency and accuracy of landing point coordinate calibration after tilting at different light source heights H.

[0109] Step S103 accurately determines the functional relationship between the detected coordinates after tilting and the input parameter set, providing practical assistance for the subsequent calibration process of the landing point coordinates after tilting. This effectively improves the calibration accuracy of the landing point coordinates after tilting and can simultaneously cover multiple tilt angles and multiple azimuth angles. Compared to manual observation and confirmation, it greatly saves resources and time, significantly improving the efficiency of the landing point coordinate calibration after tilting.

[0110] The functional relationships determined through the above embodiments can be used to accurately calibrate the detection coordinates of the tilted landing point based on the non-tilted detection coordinates of the electron beam landing point during the actual electron beam tilt detection process.

[0111] Specifically, in one embodiment provided in this application, for a target wafer requiring electron beam tilt detection, the non-tilted landing point detection coordinates in the target wafer coordinate system can be determined when the semiconductor detection equipment incident the electron beam along the normal of the target wafer onto the target landing point. The target wafer coordinate system is similar to the wafer coordinate system in the above embodiment, and can specifically be a two-dimensional Cartesian coordinate system established with a reference point (e.g., the center point) on the target wafer as the origin.

[0112] Then, the target input parameter set required for electron beam tilt detection of the target wafer can be obtained. The target input parameter set contains similar content to the single input parameter set in the above embodiment, namely, the target tilt angle and target azimuth angle of the electron beam, and the target light source distance corresponding to the electron microscope in the semiconductor detection equipment.

[0113] Based on the target input parameter set and the functional relationship determined in step S103, the detection coordinates of the target's landing point after tilting the electron beam can be accurately determined. Specifically, based on the target light source distance in the target input parameter set, and the second functional relationship obtained from the functional relationship, the coefficients of each function in the first functional relationship can be determined.

[0114] Then, based on the coefficients of each function in the first functional relationship corresponding to the distance to the target light source, the first functional relationship can be determined. Then, the target tilt angle and target azimuth angle in the target input parameter group can be substituted into the first functional relationship to determine the coordinate distance and position azimuth angle of the landing point detection coordinates after tilting relative to the non-tilted landing point detection coordinates. Further, based on the coordinate distance and position azimuth angle, the landing point detection coordinates after tilting can be calculated using, for example, formula (3) in the above embodiment.

[0115] In some embodiments, the process of determining the coordinates of the landing point after tilting can also refer to the following formula (4):

[0116]

[0117] Among them, X wafertilt1 and Y wafertilt1 This represents the detection coordinates of the target landing point on the target wafer after the electron beam is tilted according to the target input parameter set, X. wafertilt0 and Y wafertilt0 This represents the detection coordinates of the target landing point on the target wafer before the electron beam is tilted, R represents the coordinate distance determined by the target tilt angle in the target input parameter set, and Φ represents the position azimuth angle determined by the target azimuth angle in the target input parameter set.

[0118] By calculating using the formula (4) above, the detection coordinates of the target landing point on the target wafer after the electron beam is tilted can be accurately determined. The determined detection coordinates of the target landing point after tilting can be used to calibrate the actual detected coordinates of the target landing point and to calculate the error, thereby improving the accuracy of the electron beam tilting detection process for the target wafer.

[0119] In addition to the above, this application embodiment also considers that there may be many factors affecting the error between the actual landing point and the predicted landing point in the electron beam tilt detection process, such as the mechanical error of the electron microscope, the influence of environmental factors, and the mechanical precision of the platform during movement. Considering only the calibration error of the tilt detection coordinates obtained directly by the electron microscope may not accurately determine the real cause of the error.

[0120] Based on this, in another embodiment provided in this application, the tilted platform coordinates of the target landing point can be further determined in the platform coordinate system based on the coordinate mapping relationship between the target wafer coordinate system and the platform coordinate system determined in the above embodiments. The tilted platform coordinates can be used to further analyze the reasons for the abnormal error between the actual landing point and the predicted landing point after the electron beam is tilted.

[0121] Specifically, the platform coordinate system can be a two-dimensional Cartesian coordinate system established with a reference point (e.g., the center point) on the platform in the semiconductor testing equipment as the origin. The tilted platform coordinates represent the coordinates of the tilted landing point detection determined according to the target input parameter set, and their corresponding coordinate representation in the platform coordinate system.

[0122] The coordinate mapping relationship between the target wafer coordinate system and the platform coordinate system can be referred to as the following formula (5):

[0123]

[0124] Among them, X stage and Y stage This represents the tilted platform coordinates of the target's landing point in the platform coordinate system, X. wafer and Y wafer This indicates the target landing point detection coordinates after tilting in the target wafer coordinate system. 'a' is the angle between the coordinate axis (horizontal or vertical axis) of the target wafer coordinate system and the same coordinate axis (horizontal or vertical axis) of the platform coordinate system. 'offsetx' is the horizontal coordinate of the origin of the target wafer coordinate system in the platform coordinate system, and 'offsety' is the vertical coordinate of the origin of the target wafer coordinate system in the platform coordinate system.

[0125] The coordinate mapping relationship, as shown in formula (5), can accurately determine the tilted platform coordinates of the target landing point on the platform. This can be used to more accurately identify the cause of errors when there are discrepancies between the actual detection coordinates and the measured landing point coordinates. The specific positional relationship between the target wafer coordinate system and the platform coordinate system can be found by referring to... Figure 3 As shown in the image.

[0126] Figure 3 This is a schematic diagram illustrating an example of the positional relationship between a target wafer coordinate system and a platform coordinate system, provided as an embodiment of this application.

[0127] Where 301 is the origin of the target wafer coordinate system, 302 is the origin of the platform coordinate system, and 303 is the angle between the horizontal axes of the two coordinate systems, i.e., a in the above formula (5).

[0128] like Figure 3 As shown, when the origin position and coordinate axis direction of the target wafer coordinate system and the platform coordinate system are not completely consistent, the position mapping relationship shown in formula (5) above can be used to accurately map the target wafer coordinate system tilted landing point detection coordinates to the platform coordinate system tilted platform coordinates.

[0129] Based on the above formulas (4) and (5), the functional relationship between the tilted platform coordinates, coordinate distance, and position azimuth of the target landing point after the electron beam is tilted can be derived, as shown in formula (6):

[0130]

[0131] In formula (6), all variables and parameters have the same meaning as those in formulas (5) and (4). Based on formula (6), the untilted landing point detection coordinates (X) of the target landing point in the target wafer coordinate system, obtained through the above embodiments, are calculated. wafertilt0 and Y wafertilt0 After substituting the coordinate distance R determined by the tilt angle in the target input parameter group and the position azimuth angle Φ determined by the azimuth angle, the tilted platform coordinates of the target landing point in the platform coordinate system can be accurately calculated.

[0132] Through the processing described in the above embodiments, the tilted platform coordinates of the target landing point can be accurately determined. Simultaneously, based on the actual tilted landing point detection coordinates obtained after electron beam tilting and the aforementioned coordinate mapping relationship, the true tilted platform coordinates of the target landing point in the platform coordinate system can be determined.

[0133] Thus, the determined coordinate data package contains the untilted landing point detection coordinates in the target wafer coordinate system, the tilted landing point detection coordinates determined based on the target input parameter set, the actual tilted landing point detection coordinates, the tilted platform coordinates in the platform coordinate system, and the detected true tilted platform coordinates. Based on the above multiple coordinate data, it is possible to effectively analyze the landing point coordinate anomalies that exist in the electron beam tilt detection process, thereby accurately identifying the root cause of the error between the measured and predicted landing point coordinates after electron beam tilting.

[0134] This approach effectively identifies potential anomalies during electron beam tilt detection, and further processing and correction can be implemented based on the analysis and judgment results. This ensures the accuracy and efficiency of the overall electron beam tilt detection process, improves the imaging quality and accuracy of the target wafer during detection, and provides more reliable and practical reference data for subsequent optimization and adjustment of the target wafer.

[0135] The above describes the specific implementation of the electron beam landing point calibration method for semiconductor inspection equipment provided in this application embodiment. The technical solution provided in this application embodiment can accurately determine the functional relationship between the landing point coordinates before and after tilting and the input parameter sets (tilt angle, azimuth angle, and light source height) based on multiple input parameter sets. This significantly improves the calibration accuracy and processing efficiency of the actual tilted landing point calibration during subsequent electron beam tilt detection, and is more efficient and accurate than manual identification and calculation. The technical solution provided in this application embodiment can make the wafer images acquired during the image detection process based on electron beam tilt more accurate and realistic, providing a more practical reference for subsequent defect and anomaly analysis of the target wafer, and improving detection efficiency and accuracy.

[0136] Based on the electron beam landing point calibration method for semiconductor testing equipment provided in the above embodiments, this application also provides a specific implementation of the electron beam landing point calibration device for semiconductor testing equipment. Please refer to the following embodiments.

[0137] Figure 4 This is a schematic diagram of the structure of an electron beam landing point calibration device for a semiconductor testing equipment according to another embodiment of this application. The electron beam landing point calibration device 400 for the semiconductor testing equipment includes:

[0138] The untilted coordinate determination unit 401 is used to obtain the untilted detection coordinates of the target pattern in the wafer coordinate system when the electron beam is directed toward the target pattern along the normal of the sample wafer. The wafer coordinate system is a coordinate system established with a reference point on the sample wafer as the origin.

[0139] The tilted coordinate determination unit 402 is used to acquire multiple sets of input parameters and control the electron beam to tilt to multiple tilt states in sequence according to the multiple sets of input parameters. In each tilt state, the semiconductor detection device is controlled to move the sample wafer so that the electron beam falls on the target pattern and the tilted detection coordinates of the target pattern in the wafer coordinate system are acquired.

[0140] The relationship determination unit 403 is used to determine the functional relationship representing the relationship between the tilted detection coordinates and the input parameter sets based on the untilted detection coordinates, multiple tilted detection coordinates, and multiple input parameter sets.

[0141] In some embodiments, each input parameter group includes:

[0142] The input value for the tilt angle, which represents the angle between the electron beam and the normal of the sample wafer;

[0143] The azimuth angle is the input value, representing the angle between the line segment connecting the electron beam's landing point after tilting and the origin of the wafer coordinate system, and the preset coordinate axis of the wafer coordinate system; and

[0144] Light source height refers to the vertical distance between the electronic light source of the semiconductor testing equipment and the sample wafer.

[0145] In some embodiments, the relationship determination unit 403 is specifically used to obtain, for each light source height, a first functional relationship characterizing the relationship between the input values ​​of the tilt angle and the input values ​​of the azimuth angle after tilting through function fitting;

[0146] By fitting a function to the coefficients in multiple first functional relationships and multiple light source heights, a second functional relationship characterizing the relationship between each coefficient and the light source height is obtained;

[0147] The first and second functional relationships constitute a functional relationship.

[0148] In some embodiments, the first functional relationship includes:

[0149] R = R(θ), where R is the coordinate distance between the detected coordinates after tilting and the detected coordinates before tilting, and θ is the input value of the tilt angle;

[0150] Φ = Φ(α), where Φ represents the angle between the line segment connecting the tilted and untilted detection coordinates and the coordinate axis with the untilted detection coordinates as the origin, and α represents the input value of the azimuth angle;

[0151] The aforementioned tilted coordinate determination unit 402 is specifically used to, in each tilted state, acquire the tilted detection coordinates (x, y, y) of the target pattern in the wafer coordinate system. i y i The non-tilted detection coordinates are (x, y);

[0152] Φ=arctan(ΔY / ΔX), ΔX=|xx i |,ΔY=|yy i |

[0153] In some embodiments, the relationship determination unit 403 is specifically used to obtain the non-tilted landing point detection coordinates of the target landing point in the target wafer coordinate system when the electron beam is directed toward the target landing point along the normal of the target wafer. The target wafer coordinate system is a coordinate system established with a reference point on the target wafer as the origin.

[0154] Obtain the target input parameter set. Based on the functional relationship and the detection coordinates of the untilted landing point, predict the target landing point and the corresponding tilted landing point detection coordinates. The target input parameter set includes the target input value of the tilt angle, the target input value of the azimuth angle, and the target light source height.

[0155] In some embodiments, the relationship determination unit 403 is specifically used for:

[0156]

[0157] Among them, X wafertilt1 and Y wafertilt1 Indicates the coordinates of the landing point detection after tilting, X wafertilt0 and Y wafertilt0 This represents the coordinates of the untilted landing point detection, R represents the target input value of the tilt angle, and Φ represents the target input value of the azimuth angle.

[0158] In some embodiments, the relationship determination unit 403 is specifically used to determine the tilted platform coordinates of the target landing point in the platform coordinate system based on the tilted landing point detection coordinates and the coordinate mapping relationship between the target wafer coordinate system and the platform coordinate system of the carrier platform in the semiconductor testing equipment. The platform coordinate system is a coordinate system established with the reference point on the carrier platform as the origin.

[0159] Determine the platform coordinates after determining the actual tilt of the target landing point in the platform coordinate system;

[0160] An electron beam tilt anomaly analysis is performed based on the detection coordinates of the untilted landing point, the detection coordinates of the tilted landing point, the coordinates of the tilted platform, and the actual coordinates of the tilted platform.

[0161] In some embodiments, the coordinate mapping relationship includes:

[0162]

[0163] Among them, X stage and Y stage Indicates the platform coordinates after tilting, X wafertilt1 and Y wafertilt1 denoted by , where 'a' represents the angle between the same coordinate axis of the target wafer coordinate system and the platform coordinate system, 'offsetx' represents the x-coordinate of the origin of the target wafer coordinate system on the platform coordinate system, and 'offsety' represents the y-coordinate of the origin of the target wafer coordinate system on the platform coordinate system.

[0164] In some embodiments, the relationship determination unit 403 is specifically used to determine the relationship based on X. wafertilt1 and Y wafertilt1 Determine X stage and Y stage ,in:

[0165] X stage =cos(a)*(X) wafertilt0 +R*cosΦ)+sin(a)(Y wafertilt0 +R*

[0166] sinΦ)+offsetx;

[0167] Ystage =-sin(a)*(X) wafertilt0 +R*cosΦ)+cos(a)(Y wafertilt0 +R*

[0168] sinΦ)+offsety,X wafertilt0 and Y wafertilt0 This represents the coordinates of the untilted landing point detection, R represents the target input value of the tilt angle, and Φ represents the target input value of the azimuth angle.

[0169] Figure 5 This is a schematic diagram of the hardware structure of an electron beam landing point calibration device for a semiconductor testing device provided in another embodiment of this application.

[0170] The electron beam landing point calibration device in the semiconductor testing equipment may include a processor 501 and a memory 502 storing computer program instructions.

[0171] Specifically, the processor 501 may include a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits that can be configured to implement the embodiments of this application.

[0172] Memory 502 may include mass storage for data or instructions. For example, and not limitingly, memory 502 may include a hard disk drive (HDD), floppy disk drive, flash memory, optical disk, magneto-optical disk, magnetic tape, or Universal Serial Bus (USB) drive, or a combination of two or more of these. Where appropriate, memory 502 may include removable or non-removable (or fixed) media. Where appropriate, memory 502 may be internal or external to the integrated gateway disaster recovery device. In a particular embodiment, memory 502 is non-volatile solid-state memory.

[0173] In a particular embodiment, memory 502 includes read-only memory (ROM). Where appropriate, the ROM may be a mask-programmed ROM, a programmable ROM (PROM), an erasable PROM (EPROM), an electrically erasable PROM (EEPROM), an electrically rewritable ROM (EAROM), or flash memory, or a combination of two or more of these.

[0174] The processor 501 reads and executes computer program instructions stored in the memory 502 to implement the electron beam landing point calibration method of any of the semiconductor detection devices in the above embodiments.

[0175] In one example, the electron beam landing point calibration device of the semiconductor detection equipment may further include a communication interface 503 and a bus 510. Wherein, as Figure 5 As shown, the processor 501, memory 502, and communication interface 503 are connected through bus 510 and complete communication with each other.

[0176] The communication interface 503 is mainly used to realize communication between various modules, devices, units and / or equipment in the embodiments of this application.

[0177] Bus 510 includes hardware, software, or both, that couples components of an online data traffic metering device together. For example, and not limitingly, the bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), HyperTransport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an Infinite Bandwidth Interconnect, a Low Pin Count (LPC) bus, a memory bus, a Microchannel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local (VLB) bus, or other suitable buses, or combinations of two or more of these. Where appropriate, bus 510 may include one or more buses. Although specific buses are described and illustrated in embodiments of this application, any suitable bus or interconnect is contemplated herein.

[0178] Furthermore, in conjunction with the electron beam landing point calibration method for the semiconductor detection device in the above embodiments, this application embodiment can provide a computer storage medium for implementation. This computer storage medium stores computer program instructions; when these computer program instructions are executed by a processor, they implement any of the electron beam landing point calibration methods for the semiconductor detection device in the above embodiments.

[0179] This application also provides a computer program product, including a computer program, which, when executed, implements the electron beam landing point calibration method of any of the semiconductor detection devices described in the above embodiments.

[0180] It should be clarified that this application is not limited to the specific configurations and processes described above and shown in the figures. For the sake of brevity, detailed descriptions of known methods are omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of this application is not limited to the specific steps described and shown. Those skilled in the art can make various changes, modifications, and additions, or change the order of steps, after understanding the spirit of this application.

[0181] The functional blocks shown in the above block diagram can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, they can be, for example, electronic circuits, application-specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, etc. When implemented in software, the elements of this application are programs or code segments used to perform the required tasks. Programs or code segments can be stored on a machine-readable medium or transmitted over a transmission medium or communication link via data signals carried on a carrier wave. "Machine-readable medium" can include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical disks, hard disks, fiber optic media, radio frequency (RF) links, etc. Code segments can be downloaded via computer networks such as the Internet, intranets, etc.

[0182] It should also be noted that the exemplary embodiments mentioned in this application describe methods or systems based on a series of steps or apparatus. However, this application is not limited to the order of the above steps; that is, the steps can be performed in the order mentioned in the embodiments, or in a different order, or several steps can be performed simultaneously.

[0183] The aspects of this disclosure have been described above with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this disclosure. It should be understood that each block in the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing apparatus to produce a machine such that these instructions, executable via the processor of the computer or other programmable data processing apparatus, enable the implementation of the functions / actions specified in one or more blocks of the flowchart illustrations and / or block diagrams. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field-programmable logic circuit. It is also understood that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can also be implemented by special-purpose hardware performing the specified functions or actions, or can be implemented by a combination of special-purpose hardware and computer instructions.

[0184] The above are merely specific embodiments of this application. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, modules, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. It should be understood that the protection scope of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the protection scope of this application.

Claims

1. A method for calibrating the electron beam landing point position in a semiconductor detection device, characterized in that, include: When the electron beam is directed toward the target pattern along the normal of the sample wafer, the untilted detection coordinates of the target pattern in the wafer coordinate system are obtained. The wafer coordinate system is a coordinate system established with a reference point on the sample wafer as the origin. Multiple input parameter sets are acquired, and the electron beam is controlled to tilt sequentially to multiple tilt states according to the multiple input parameter sets. In each tilt state, the semiconductor detection device is controlled to move the sample wafer so that the electron beam falls on the target pattern, and the tilt detection coordinates of the target pattern on the wafer coordinate system are acquired. The input parameter sets include: the input value of the tilt angle, which represents the angle between the electron beam and the normal of the sample wafer; the input value of the azimuth angle, which represents the angle formed by the line segment connecting the landing point of the tilted electron beam and the origin of the wafer coordinate system and the preset coordinate axis of the wafer coordinate system; and the light source height, which represents the vertical distance from the electron light source of the semiconductor detection device to the sample wafer. Based on the untilted detection coordinates, the multiple tilted detection coordinates, and the multiple input parameter sets, a functional relationship characterizing the relationship between the tilted detection coordinates and the input parameter sets is determined; The step of determining the functional relationship characterizing the relationship between the tilted detection coordinates and the input parameter sets based on the untilted detection coordinates, multiple tilted detection coordinates, and multiple input parameter sets includes: For each light source height, a first functional relationship is obtained through function fitting, which characterizes the relationship between the detected coordinates after tilting and the input values ​​of the tilt angle and the azimuth angle. By performing function fitting on the coefficients in the multiple first functional relationships and the multiple light source heights, a second functional relationship characterizing the relationship between each coefficient and the light source height is obtained; The first functional relation and the second functional relation constitute the functional relation.

2. The method according to claim 1, characterized in that, The first functional relationship includes: R=R( R is the coordinate distance between the tilted detection coordinate and the untilted detection coordinate. The input value for the tilt angle; Φ = Φ (α), where Φ represents the angle between the line segment connecting the tilted detection coordinate and the untilted detection coordinate and the coordinate axis with the untilted detection coordinate as the origin, and α represents the input value of the azimuth angle; The step of obtaining the tilt of the target pattern in the wafer coordinate system and then detecting its coordinates includes: In each tilt state, the tilt detection coordinates of the target pattern in the wafer coordinate system are obtained. , The non-tilted detection coordinates are (x, y); The The The = The .

3. The method according to claim 1, characterized in that, After the step of determining the functional relationship characterizing the relationship between the tilted detected coordinates and the input parameter set, the method further includes: When the electron beam is directed toward the target landing point along the normal of the target wafer, the non-tilted landing point detection coordinates of the target landing point in the target wafer coordinate system are obtained. The target wafer coordinate system is a coordinate system established with the reference point on the target wafer as the origin. Obtain the target input parameter set, and based on the functional relationship and the untilted landing point detection coordinates, predict the target landing point and the tilted landing point detection coordinates corresponding to the target input parameter set. The target input parameter set includes the target input value of the tilt angle, the target input value of the azimuth angle, and the target light source height.

4. The method according to claim 3, characterized in that, The step of predicting the target landing point and the tilted landing point detection coordinates corresponding to the target input parameter set based on the functional relationship and the untilted landing point detection coordinates includes: Among them, the and stated The coordinates of the landing point after tilting are indicated. and stated The coordinates of the non-tilted landing point detection, the The target input value representing the tilt angle, the This represents the target input value for the azimuth angle.

5. The method according to claim 3, characterized in that, After the step of predicting the tilted landing point detection coordinates corresponding to the target input parameter set, the method further includes: Based on the tilted landing point detection coordinates and the coordinate mapping relationship between the target wafer coordinate system and the platform coordinate system of the carrier platform in the semiconductor testing equipment, the tilted platform coordinates of the target landing point on the platform coordinate system are determined. The platform coordinate system is a coordinate system established with the reference point on the carrier platform as the origin. Determine the actual tilted platform coordinates of the target landing point in the platform coordinate system; Electron beam tilt anomaly analysis is performed based on the non-tilted landing point detection coordinates, the tilted landing point detection coordinates, the tilted platform coordinates, and the actual tilted platform coordinates.

6. The method according to claim 5, characterized in that, The coordinate mapping relationship includes: Among them, the and stated Indicates the coordinates of the tilted platform, the and stated The coordinates of the landing point after tilting are indicated. The angle between the same coordinate axis of the target wafer coordinate system and the platform coordinate system represents the angle between the two coordinate axes. The x-coordinate of the origin of the target wafer coordinate system on the platform coordinate system represents the x-coordinate of the origin of the target wafer coordinate system. The ordinate of the origin of the target wafer coordinate system in the platform coordinate system is indicated. Based on the tilted landing point detection coordinates and the coordinate mapping relationship between the target wafer coordinate system and the platform coordinate system of the carrier platform in the semiconductor inspection equipment, the tilted platform coordinates of the target landing point in the platform coordinate system are determined, including: According to the above and stated Determine the and stated ,in: The ; The The and stated The coordinates of the non-tilted landing point detection, the The target input value representing the tilt angle, the This represents the target input value for the azimuth angle.

7. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer program instructions, which, when executed by a processor, implement the electron beam landing point calibration method of the semiconductor detection device as described in any one of claims 1-6.

8. A computer program product, characterized in that, When the instructions in the computer program product are executed by the processor of the electronic device, the electronic device performs the electron beam landing point calibration method of the semiconductor detection device as described in any one of claims 1-6.

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