A memory device access control method, program product, device and medium
CN120994146BActive Publication Date: 2026-01-27SHANDONG YUNHAI GUOCHUANG CLOUD COMPUTING EQUIP IND INNOVATION CENT CO LTD
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Patent Information
- Application Number
- CN202511525599.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-24
- Publication Date
- 2026-01-27
- Estimated Expiration
- 2045-10-24
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Figure CN120994146B_ABST
Abstract
The application discloses a memory device access control method, a program product, a device and a medium, and relates to the technical field of computers, and comprises the following steps: configuring a first memory address space and a second memory address space for a dynamic random access memory medium and a flash memory medium of a memory device respectively; dividing the dynamic random access memory medium into a first storage area and a second storage area; the first storage area is mapped to the first memory address space, and is used for storing preset high-access-demand data by a host; the second storage area is a cache of the flash memory medium, and is used for temporarily storing preset low-access-demand data and nonvolatile data; and routing a memory access request to a corresponding storage area. The application solves the problems that capacity expansion of a CXL-DRAM memory expansion device significantly increases cost and does not support nonvolatile characteristics, and solves the problems that a CXL-SSD solid-state storage device has a slower access speed than a CXL-DRAM and the speed depends on the memory capacity of a device side.
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