A fault detection method and system for an energy storage cabinet

Abstract

The present disclosure relates to a fault detection method and system for an energy storage cabinet. The method comprises determining a fault location of the energy storage cabinet based on an operating state of the energy storage cabinet. Based on the fault location of the energy storage cabinet, prompt information corresponding to a fault detection circuit is obtained. The fault detection circuit is magnetically attracted to a cabinet door of the energy storage cabinet. The fault detection circuit has at least two pins, each pin being connected to a circuit corresponding to the fault location of the energy storage cabinet. The small size, light weight and simple fixation of the fault detection circuit are used to improve the convenience of fault detection of the energy storage cabinet. Based on the position of each pin connected to the circuit corresponding to the fault location of the energy storage cabinet and the prompt information corresponding to the fault detection circuit, a fault detection result of the energy storage cabinet is determined. The accuracy of the fault detection result is ensured by combining the prompt information fed back by the fault detection circuit in real time, and the safe and convenient troubleshooting of the energy storage cabinet is realized.

Description

Technical Field

[0001] The embodiments in this specification belong to the field of energy storage product commissioning technology, and specifically relate to a fault detection method and system for energy storage cabinets. Background Technology

[0002] Energy storage products typically refer to comprehensive devices that integrate power systems, battery management systems (BMS), power conversion systems (PCS), display and control systems, temperature control systems, and safety protection systems, playing a crucial role in modern energy systems. With the continuous introduction of energy storage products, energy storage systems are becoming increasingly complex, especially large-scale energy storage devices such as energy storage cabinets, which have more and more built-in electrical components and correspondingly more complex control logic.

[0003] With the increasing number of electrical components, the placement of these components within energy storage cabinets is becoming increasingly dense, posing significant challenges to the commissioning and fault detection of these cabinets. Currently, the commonly used method for fault detection in energy storage cabinets is the use of a multimeter. However, due to the large size and limited functionality of multimeters, their use in fault detection is complex and affects testing accuracy, potentially even damaging the connecting circuits. Summary of the Invention

[0004] The embodiments of this disclosure provide a fault detection method and system for energy storage cabinets.

[0005] In a first aspect of this disclosure, a fault detection method for an energy storage cabinet is provided. The method includes determining the fault location of the energy storage cabinet based on its operating state. The method also includes acquiring a prompt message corresponding to a fault detection circuit based on the fault location; the fault detection circuit is magnetically attached to the cabinet door of the energy storage cabinet, and the fault detection circuit has at least two pins, each pin being connected to a circuit corresponding to the fault location of the energy storage cabinet. Furthermore, the method includes determining the fault detection result of the energy storage cabinet based on the circuit positions where each pin is connected to the fault location of the energy storage cabinet and the prompt message corresponding to the fault detection circuit.

[0006] In a second aspect of this disclosure, a fault detection system for an energy storage cabinet is provided. The system includes a location determination module configured to determine the fault location of the energy storage cabinet based on its operating state. The system also includes an information acquisition module configured to acquire a prompt message corresponding to a fault detection circuit based on the fault location of the energy storage cabinet. The fault detection circuit is magnetically attached to the cabinet door of the energy storage cabinet and has at least two pins, each pin connected to a circuit corresponding to the fault location of the energy storage cabinet. Furthermore, the system includes a result determination module configured to determine the fault detection result of the energy storage cabinet based on the circuit location where each pin is connected to the fault location of the energy storage cabinet and the prompt message corresponding to the fault detection circuit.

[0007] In a third aspect of this disclosure, a computer program product is provided, comprising a computer program that is executed by a processor to implement the method according to the first aspect.

[0008] In a fourth aspect of this disclosure, a machine-readable storage medium is provided. The machine-readable storage medium stores machine-executable instructions, which are executed by a processor to implement the method provided according to a first aspect of this disclosure.

[0009] It should be understood that the description in the Summary of the Invention section is not intended to limit the key or essential features of the embodiments of this disclosure, nor is it intended to restrict the scope of this disclosure. Other features of this disclosure will become readily apparent from the following description. Attached Figure Description

[0010] The above and other features, advantages, and aspects of the embodiments of this disclosure will become more apparent from the accompanying drawings and the following detailed description. In the drawings, the same or similar reference numerals denote the same or similar elements, wherein: Figure 1 A schematic diagram of an example environment in which some embodiments of this disclosure may be implemented is shown; Figure 2 A flowchart illustrating a fault detection method for an energy storage cabinet according to some embodiments of this disclosure is shown. Figure 3 A schematic diagram of the structure of a fault detection circuit according to some embodiments of the present disclosure is shown; Figure 4 A schematic diagram of the structure of another fault detection circuit according to some embodiments of the present disclosure is shown; Figure 5 A block diagram of a fault detection system for an energy storage cabinet, according to some embodiments of this disclosure, is shown; and Figure 6 A block diagram of an electronic device that can implement several embodiments of the present disclosure is shown. Detailed Implementation

[0011] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this specification will be clearly and completely described below with reference to the corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0012] The terms “comprising” and “having”, and any variations thereof, in this specification, claims, and the foregoing drawings are intended to cover a non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to such process, method, product, or apparatus. Depending on the context, the word “if” as it applies herein may be interpreted as “when”, “when”, “in response to determination”, or “in response to detection”.

[0013] As mentioned above, the commonly used method for fault detection in energy storage cabinets is to use a multimeter. However, due to the large size of the multimeter, it is inconvenient to place and fix the multimeter when performing fault detection on the energy storage cabinet, which leads to problems such as complexity in use and reduced fault detection efficiency. In addition, it is also subject to the defects of the multimeter's detection function. For example, it cannot provide timely feedback when a circuit action signal is detected, and it cannot effectively detect the action signal of transient circuits. Furthermore, when using a multimeter, it must be treated as part of the circuit, which can easily lead to damage to the connected circuit due to the introduction of load effect, misoperation, or electrostatic overvoltage, thus seriously affecting the use of the energy storage cabinet.

[0014] Therefore, embodiments of this disclosure propose a fault detection method for energy storage cabinets. The method includes determining the fault location of the energy storage cabinet based on its operating state. The method also includes acquiring a prompt message corresponding to a fault detection circuit based on the fault location; the fault detection circuit is magnetically attached to the cabinet door of the energy storage cabinet, and has at least two pins, each pin being connected to the circuit corresponding to the fault location of the energy storage cabinet. Furthermore, the method includes determining the fault detection result of the energy storage cabinet based on the circuit positions where each pin is connected to the fault location of the energy storage cabinet and the prompt message corresponding to the fault detection circuit.

[0015] In this way, the circuit corresponding to the fault location of the energy storage cabinet can be detected based on the fault detection circuit. The small size, light weight, and simple installation of the fault detection circuit can be used to improve the convenience of fault detection in the energy storage cabinet. Furthermore, the fault detection result of the energy storage cabinet can be determined based on the prompt information corresponding to the fault detection circuit and the circuit position of each pin connected to the fault location. The accuracy of the fault detection result can be ensured by combining the prompt information fed back by the fault detection circuit in real time, thereby realizing safe and convenient troubleshooting of anomalies in the energy storage cabinet.

[0016] Figure 1 Schematic diagrams are shown illustrating example environments in which some embodiments of this disclosure may be implemented. For example... Figure 1As shown, the example environment 100 may include an energy storage cabinet 101 that has been assembled and is in the commissioning stage. The energy storage cabinet 101 is equipped with corresponding circuit structures for a power system, battery management system (BMS), power conversion system (PCS), display and control system, temperature control system, and safety protection system. During the fault detection stage, it can send control signals to the corresponding circuit structures of each system to determine whether the operating status of the corresponding system is abnormal, based on the feedback signals from each circuit structure. In one example, when the feedback signal of the circuit structure corresponding to the display and control system is a low-level signal, it indicates that the operating status of the display and control system is abnormal. The cause of the fault may be a fault in the display and control system itself or a fault in the power supply terminal output to the display and control system. When the feedback signal of the circuit structure corresponding to the temperature control system is a low-level signal, it indicates that the operating status of the temperature control system is abnormal. The cause of the fault may be a fault in the temperature control system itself or a fault in the power supply terminal of the temperature control system. When the bus feedback voltage of the circuit structure corresponding to the power system is a high-voltage signal, it indicates that the operating status of the power system is abnormal. The cause of the fault may be an overvoltage fault, transient voltage fault, or reverse connection fault on the power system bus.

[0017] It is understood that the circuit structures corresponding to the power system, battery management system (BMS), power conversion system (PCS), display and control system, temperature control system and safety protection system of some embodiments of this disclosure are well known in the art. For example, the display and control system may be a circuit structure composed of a display screen, a touch screen, a microprocessor and a communication interface, but will not be described in detail here.

[0018] Example environment 100 may further include a processing terminal 102, which can establish a communication connection with energy storage cabinet 101 to acquire feedback signals from the corresponding circuit structures of each system received by the energy storage cabinet during the fault detection phase. The feedback signals from the corresponding circuit structures of each system are used as the operating status of the energy storage cabinet to determine the fault location. Here, the fault location of the energy storage cabinet may be one or more of the following: power system, display and control system, temperature control system, battery management system, energy conversion system, and safety protection system.

[0019] Furthermore, after determining the fault location of the energy storage cabinet, the processing terminal 102 can control each pin of the fault detection circuit to connect to the circuit corresponding to the fault location in order to obtain the corresponding prompt information from the fault detection circuit. Here, the fault detection circuit may include at least two pins. The connection position of each pin to the circuit corresponding to the fault location can be determined based on a preset pin position-fault location correspondence. This preset pin position-fault location correspondence can be derived by testing personnel through analysis of historical fault detection records, and includes multiple fault locations and the multiple pin positions corresponding to each fault location. In one example, when the fault location is the display and control system, the preset pin position-fault location correspondence determines that the first pin of the fault detection circuit can be connected to the positive terminal of the energy storage cabinet's power supply (i.e., the positive output terminal of the power system), the second pin can be connected to the negative terminal of the energy storage cabinet's power supply (i.e., the negative output terminal of the power system), the third pin can be connected to the positive terminal of the display and control system's power input, and the fourth pin can be connected to the negative terminal of the display and control system's power input. The prompt information corresponding to the fault detection circuit can be understood as the prompt status presented by the working status of the buzzer and the working status of the LED set by the fault detection circuit. For example, when the buzzer is working and the LED is working, the prompt information can be "light on and buzzer on".

[0020] It is understood that the processing terminal 102 controls the connection of each pin of the fault detection circuit to the circuit corresponding to the fault location. This can be achieved by the processing terminal 102 feeding back the pin positions of the fault detection circuit to the testing personnel, who can then magnetically attach the fault detection circuit to the energy storage cabinet door (or, of course, suspend it using hooks, not limited to this method), and connect each pin of the fault detection circuit to the corresponding position. Alternatively, in some embodiments of this disclosure, the processing terminal can also control the connection of each pin of the fault detection circuit to the circuit corresponding to the fault location through preset automatic control programs and robotic arm control, etc., to achieve fully automated fault detection; however, further details are omitted here.

[0021] In addition, the processing terminal 102 can determine the fault detection result of the energy storage cabinet based on the circuit location corresponding to the fault location of each pin connected to the energy storage cabinet and the prompt information corresponding to the fault detection circuit, and feed back the fault detection result of the energy storage cabinet to the test personnel in real time, so that the test personnel can troubleshoot and handle the fault in a timely manner.

[0022] In this way, the circuit corresponding to the fault location of the energy storage cabinet can be detected based on the fault detection circuit. The small size, light weight, and simple installation of the fault detection circuit can be used to improve the convenience of fault detection in the energy storage cabinet. Furthermore, the fault detection result of the energy storage cabinet can be determined based on the prompt information corresponding to the fault detection circuit and the circuit position of each pin connected to the fault location. The accuracy of the fault detection result can be ensured by combining the prompt information fed back by the fault detection circuit in real time, thereby realizing safe and convenient troubleshooting of anomalies in the energy storage cabinet.

[0023] In some embodiments of this disclosure, the processing terminal 102 may be a smartphone, tablet computer, desktop computer, laptop computer, notebook computer, ultra-mobile personal computer (UMPC), handheld computer, PC device, personal digital assistant (PDA), routing device, virtual reality device, etc., or it may be a hardware server, virtual server, cloud server, routing device, gateway device, etc.

[0024] It should be understood that the architecture and functionality in example environment 100 are described for illustrative purposes only and do not imply any limitation on the scope of this disclosure. Embodiments of this disclosure can also be applied to other environments with different architectures and / or functionalities.

[0025] Figure 2 A flowchart of a fault detection method for an energy storage cabinet according to some embodiments of the present disclosure is shown. Method 200 may be, for example, by... Figure 1 The processing terminal in the example environment shown executes. For example... Figure 2 As shown in block 202, method 200 can determine the fault location of the energy storage cabinet based on its operating status. Here, the operating status of the energy storage cabinet can be understood as... Figure 1The example environment shown illustrates the feedback signals received by the energy storage cabinet during the fault detection phase from the corresponding circuit structures of various systems. These systems can be one or more of the following: power system, battery management system (BMS), power conversion system (PCS), display and control system, temperature control system, and safety protection system. The fault location of the energy storage cabinet can also be one or more of these systems. In some implementations, after acquiring the operating status of the energy storage cabinet, the processing terminal can determine the fault location by combining the feedback signals from the corresponding circuit structures of each system under normal operating conditions. For example, if a significant difference is detected between the feedback signal from the display and control system's circuit structure during the energy storage cabinet's operating state and the feedback signal from the display and control system's circuit structure under normal operating conditions (i.e., the feedback signal from the display and control system's circuit structure during the energy storage cabinet's operating state is a low-level signal, while the feedback signal from the display and control system's circuit structure under normal operating conditions is a high-level signal), the fault location of the energy storage cabinet can be determined to be the display and control system.

[0026] In block 204, method 200 can obtain the prompt information corresponding to the fault detection circuit based on the fault location of the energy storage cabinet. In some implementations, after determining the fault location of the energy storage cabinet, the processing terminal can query the pin positions corresponding to the fault location of the energy storage cabinet in a preset pin position-fault location correspondence, and feed back the pin positions to the test personnel so that the test personnel can magnetically attach the fault detection circuit to the cabinet door of the energy storage cabinet (or it can be fixed by hanging with hooks, not limited to this), and connect each pin to the circuit corresponding to the fault location of the energy storage cabinet. In one example, when the fault location of the energy storage cabinet is the display and control system, the first pin of the fault detection circuit can be connected to the positive terminal of the energy storage cabinet's power supply (i.e., the positive output terminal of the power system), the second pin can be connected to the negative terminal of the energy storage cabinet's power supply (i.e., the negative output terminal of the power system), the third pin can be connected to the positive terminal of the display and control system's power input, and the fourth pin can be connected to the negative terminal of the display and control system's power input. When the fault location of the energy storage cabinet is the power system, the first pin of the fault detection circuit can be connected to... The first pin can be connected to the positive terminal of the power supply system bus, the second pin can be connected to the negative terminal of the power supply system bus, and the third and fourth pins can both be connected to an oscilloscope (which can be installed inside the energy storage cabinet to record the voltage output by the third and fourth pins); when the fault location of the energy storage cabinet is the temperature control system, it can be determined that the first pin can be connected to the positive terminal of the power input of the temperature control system, the second pin can be connected to the negative terminal of the power input of the temperature control system, and the third and fourth pins can both be connected to an oscilloscope.

[0027] Subsequently, the processing terminal can acquire the corresponding prompt information from the fault detection circuit through the set sensors. Here, the fault detection circuit is equipped with a buzzer and an LED. The prompt information corresponding to this fault detection circuit can be understood as the prompt status presented by the working state of the buzzer and the LED (i.e., dual sound and light indication). For example, when both the buzzer and the LED are working, the prompt information can correspond to a light-on beeping. The set image sensor and sound sensor can respectively collect the light-on image signal and the beeping sound signal and feed them back to the processing terminal, which then analyzes and processes the light-on image signal and the beeping sound signal to determine that the prompt information is a light-on beeping. It is understood that the methods used by the processing terminal in some embodiments of this disclosure to analyze and process the light-on image signal and the beeping sound signal are well-known techniques in the art, and will not be elaborated upon here.

[0028] Of course, the processing terminal can also determine the prompt information corresponding to the fault detection circuit by having the tester input the working status of the buzzer and the working status of the LED, and it is not limited to this.

[0029] In block 206, method 200 can determine the fault detection result of the energy storage cabinet based on the circuit position corresponding to the fault location of each pin connected to the energy storage cabinet and the prompt information corresponding to the fault detection circuit. In some implementations, taking the fault location of the energy storage cabinet as the display and control system, and the circuit position corresponding to the fault location of the first pin connected to the energy storage cabinet as the positive terminal of the power supply of the energy storage cabinet, the circuit position corresponding to the fault location of the second pin connected to the energy storage cabinet as the negative terminal of the power supply of the energy storage cabinet, the circuit position corresponding to the fault location of the third pin connected to the energy storage cabinet as the positive terminal of the power input of the display and control system of the energy storage cabinet, and the circuit position corresponding to the fault location of the fourth pin connected to the energy storage cabinet as the negative terminal of the power input of the display and control system of the energy storage cabinet, the processing terminal can determine whether the prompt information corresponding to the fault detection circuit is an indicator light and a buzzer.

[0030] Understandably, when the fault detection circuit displays an indicator light and a buzzer, it indicates that the voltage at the circuit location connected to the first pin is greater than the voltage at the circuit location connected to the second pin, and the voltage at the circuit location connected to the first pin is less than the power supply voltage of the fault detection circuit. Therefore, the system can determine that the fault detection result of the energy storage cabinet is an abnormality in the display and control system itself, and this fault detection result is fed back to the test personnel in real time for troubleshooting. Conversely, when the fault detection circuit does not display an indicator light and a buzzer, it indicates that the voltage at both the circuit locations connected to the first and second pins is 0. Therefore, the system can determine that the fault detection result of the energy storage cabinet is an abnormality in the power supply end (i.e., the power system and the line where the power system outputs power to the display and control system), and this fault detection result is fed back to the test personnel in real time for troubleshooting. It should be noted that the power supply voltage of the fault detection circuit can be provided by the battery built into the fault detection circuit, for example, a 24V power supply voltage, to electrically isolate it from the energy storage cabinet and prevent interference or short circuit risks.

[0031] In some implementations, taking the fault location of the energy storage cabinet as an example of the display and control system, the fault detection circuit specifically includes a first operational amplifier, a first resistor, a first bipolar transistor, a second operational amplifier, a second bipolar transistor, a second resistor, a third bipolar transistor, a first field-effect transistor, a second field-effect transistor, a third resistor, a third field-effect transistor, a first buzzer, a green light-emitting diode, and a fourth resistor, wherein: The first input terminal of the first operational amplifier is connected to the first pin, the second input terminal of the first operational amplifier is connected to the second pin, the third input terminal of the first operational amplifier is connected to the power supply terminal, the first output terminal of the first operational amplifier is connected to one end of the first resistor, and the second output terminal of the first operational amplifier is connected to the ground terminal. The other end of the first resistor is connected to the base of the first bipolar transistor; The collector of the first bipolar transistor is connected to the power supply terminal, and the emitter of the first bipolar transistor is connected to the first input terminal of the second operational amplifier. The second input terminal of the second operational amplifier is connected to the first pin, the third input terminal of the second operational amplifier is connected to the power supply terminal, the first output terminal of the second operational amplifier is connected to the base of the second bipolar transistor, and the second output terminal of the second operational amplifier is connected to the ground terminal. The collector of the second bipolar transistor is connected to the power supply terminal, and the emitter of the second bipolar transistor is connected to one end of the second resistor. The other end of the second resistor is connected to the base of the third bipolar transistor; The collector of the third bipolar transistor is connected to the gate of the first field-effect transistor, one end of the third resistor, and the gate of the second field-effect transistor, respectively. The emitter of the third bipolar transistor is connected to the gate of the third field-effect transistor, one end of the first buzzer, and the positive terminal of the green light-emitting diode, respectively. The drain of the first field-effect transistor is connected to the first pin, and the source of the first field-effect transistor is connected to the source of the second field-effect transistor and the other end of the third resistor, respectively. The drain of the second field-effect transistor is connected to the third pin; The drain of the third field-effect transistor is connected to the second pin, and the source of the third field-effect transistor is connected to the fourth pin. The other end of the first buzzer is connected to the grounding terminal; The negative terminal of the green LED is connected to one end of the fourth resistor, and the other end of the fourth resistor is connected to the ground terminal.

[0032] Here, when the voltage at the circuit location where the first pin is connected is greater than the voltage at the circuit location where the second pin is connected, and the voltage at the circuit location where the first pin is connected is less than the power supply voltage of the fault detection circuit, the first output terminal of the first operational amplifier outputs a high-level signal, causing the base of the first bipolar transistor to receive a high-level signal and turn on. This then causes the power supply voltage of the fault detection circuit to be output to the first input terminal of the second operational amplifier. Afterward, the first output terminal of the second operational amplifier outputs a high-level signal, causing the base of the second bipolar transistor to receive a high-level signal and turn on. Subsequently, the second bipolar transistor pulls down the gate voltage of the first field-effect transistor, causing the first field-effect transistor to turn on. Then, the drain voltage of the first field-effect transistor triggers the base of the third bipolar transistor, causing the third bipolar transistor to turn on. The third bipolar transistor pulls down the gate voltage of the second field-effect transistor, causing the second field-effect transistor to conduct. Then, the voltage at the circuit location connected to the first pin is output through the circuit location connected to the third pin (i.e., the voltage at the circuit location connected to the third pin is equal to the voltage at the circuit location connected to the first pin). Next, the conduction of the third bipolar transistor causes the first buzzer and the green LED to operate, resulting in a green light and buzzer. Then, the conduction of the third bipolar transistor also triggers the gate of the third field-effect transistor, causing it to conduct and output the voltage at the circuit location connected to the second pin through the circuit location connected to the fourth pin (i.e., the voltage at the circuit location connected to the fourth pin is equal to the voltage at the circuit location connected to the second pin).

[0033] In some embodiments of this disclosure, the first and second field-effect transistors are P-type field-effect transistors, the third field-effect transistor is an N-type field-effect transistor, and the first, second, and third bipolar transistors are all NPN bipolar transistors.

[0034] This circuit design structure not only avoids damage to the detection circuit structure, but also effectively acquires transient changes in the circuit signal, thereby ensuring the accuracy and reliability of the fault detection results.

[0035] In some implementations, the fault location of the energy storage cabinet is taken as the power system. The circuit position corresponding to the fault location of the energy storage cabinet is the positive bus of the power system, and the circuit position corresponding to the fault location of the energy storage cabinet is the negative bus of the power system. The third and fourth pin positions can be connected to an oscilloscope (which can be set inside the energy storage cabinet to record the voltage output by the third and fourth pins). For example, when the processing terminal detects that the prompt information corresponding to the fault detection circuit is a lit light (green light) and a beep (continuous long beep), it indicates that the power supply to the first pin is connected to the positive bus. If the voltage at the circuit location is greater than the voltage at the circuit location connected to the second pin, and the voltage at the circuit location connected to the first pin is greater than the power supply voltage of the fault detection circuit, it can be determined that the fault detection result of the energy storage cabinet is an abnormal positive voltage on the power system bus. When the prompt message corresponding to the fault detection circuit is a lit light (green light) and a buzzer (intermittent long beep), it can be determined that the fault detection result of the energy storage cabinet is a transient voltage on the positive bus of the power system. When the prompt message corresponding to the fault detection circuit is not a lit light and a buzzer, it can be determined that the fault detection result of the energy storage cabinet is a reverse connection between the positive and negative terminals of the power system bus.

[0036] Taking the fault location of the energy storage cabinet as the power system as an example, the fault detection circuit also includes a fourth bipolar transistor, a fifth resistor, a fifth bipolar transistor, a fourth field-effect transistor, a sixth resistor, and a fifth field-effect transistor, wherein: The emitter of the fourth bipolar transistor is connected to the first pin, the base of the fourth bipolar transistor is connected to the first output terminal of the second operational amplifier, and the collector of the fourth bipolar transistor is connected to one end of the fifth resistor. The other end of the fifth resistor is connected to the base of the fifth bipolar transistor; The emitter of the fifth bipolar transistor is connected to the gate of the third field-effect transistor, one end of the first buzzer, and the positive terminal of the green light-emitting diode, respectively. The collector of the fifth bipolar transistor is connected to the gate of the fourth field-effect transistor, one end of the sixth resistor, and the gate of the fifth field-effect transistor, respectively. The drain of the fourth field-effect transistor is connected to the first pin, and the source of the fourth field-effect transistor is connected to the other end of the sixth resistor and the source of the fifth field-effect transistor, respectively. The drain of the fifth field-effect transistor is connected to the third pin.

[0037] Here, when the voltage at the circuit location where the first pin is connected is greater than the voltage at the circuit location where the second pin is connected, and the voltage at the circuit location where the first pin is connected is greater than the power supply voltage of the fault detection circuit, the first output terminal of the first operational amplifier outputs a high-level signal, causing the base of the first bipolar transistor to receive a high-level signal and turn on. This then causes the power supply voltage of the fault detection circuit to be output to the first input terminal of the second operational amplifier. Afterwards, the first output terminal of the second operational amplifier outputs a low-level signal, causing the base of the fourth bipolar transistor to receive a low-level signal and turn on. Subsequently, the fourth bipolar transistor pulls down the gate voltage of the fourth field-effect transistor, causing the fourth field-effect transistor to turn on. Then, the drain voltage of the fourth field-effect transistor triggers the base of the fifth bipolar transistor, causing the fifth bipolar transistor to turn on. The fifth bipolar transistor (BPT) then pulls down the gate voltage of the fifth field-effect transistor (FET), causing the FET to conduct. It then outputs the voltage at the circuit location connected to the first pin through the circuit location connected to the third pin (i.e., the voltage at the circuit location connected to the third pin is equal to the voltage at the circuit location connected to the first pin). The conduction of the fifth BPT then activates the first buzzer and the green LED, resulting in a green light and buzzer. Furthermore, the conduction of the fifth BPT triggers the gate of the third FET, causing it to conduct and output the voltage at the circuit location connected to the second pin through the circuit location connected to the fourth pin (i.e., the voltage at the circuit location connected to the fourth pin is equal to the voltage at the circuit location connected to the second pin).

[0038] In some embodiments of this disclosure, the fourth and fifth field-effect transistors are P-type field-effect transistors (and both are high-voltage field-effect transistors to avoid the risk of breakdown), the fourth bipolar transistor is a PNP type bipolar transistor, and the fifth bipolar transistor is an NPN type bipolar transistor.

[0039] See also: Figure 3 The diagram shows a structural schematic of a fault detection circuit according to some embodiments of the present disclosure. Figure 3As shown, 1 is the first pin, 2 is the second pin, 3 is the third pin, 4 is the fourth pin, V0 is the power supply voltage of the fault detection circuit, operational amplifier 1 is the first operational amplifier, operational amplifier 2 is the second operational amplifier, bipolar transistor T1 is the first bipolar transistor, bipolar transistor T2 is the second bipolar transistor, bipolar transistor T3 is the third bipolar transistor, bipolar transistor T4 is the fourth bipolar transistor, bipolar transistor T5 is the fifth bipolar transistor, R1 is the first resistor, R2 is the second resistor, R3 is the third resistor, R4 is the fourth resistor, R5 is the fifth resistor, R6 is the sixth resistor, field-effect transistor 1 is the first field-effect transistor, field-effect transistor 2 is the second field-effect transistor, field-effect transistor 3 is the third field-effect transistor, field-effect transistor 4 is the fourth field-effect transistor, field-effect transistor 5 is the fifth field-effect transistor, and buzzer 1 is the first buzzer.

[0040] In some implementations, taking the fault location of the energy storage cabinet as the temperature control system, the circuit position corresponding to the fault location of the energy storage cabinet as the positive power input of the temperature control system, the circuit position corresponding to the fault location of the energy storage cabinet as the negative power input of the temperature control system, and the third and fourth pin positions as possible to be connected to an oscilloscope (which can be set inside the energy storage cabinet to record the voltage output by the third and fourth pins), for example, when the processing terminal detects that the prompt information corresponding to the fault detection circuit is a lit red light and a buzzer, it indicates that the voltage at the circuit position connected to the first pin is less than the voltage at the circuit position connected to the second pin, and the voltage at the circuit position connected to the second pin is less than the power supply voltage of the fault detection circuit, and it can be determined that the fault detection result of the energy storage cabinet is that the power line of the temperature control system is reversed; when the prompt information corresponding to the fault detection circuit is a lit green light and a buzzer, it can be determined that the fault detection result of the energy storage cabinet is that the temperature control system itself is abnormal.

[0041] Taking the temperature control system as an example of the fault location in the energy storage cabinet, the fault detection circuit may also include a seventh resistor, a sixth bipolar transistor, a third operational amplifier, a seventh bipolar transistor, an eighth resistor, an eighth bipolar transistor, a sixth field-effect transistor, a seventh field-effect transistor, a ninth resistor, an eighth field-effect transistor, a second buzzer, a red light-emitting diode, and a tenth resistor, wherein: One end of the seventh resistor is connected to the first output terminal of the first operational amplifier, and the other end of the seventh resistor is connected to the base of the sixth bipolar transistor. The emitter of the sixth bipolar transistor is connected to the power supply terminal, and the collector of the sixth bipolar transistor is connected to the first input terminal of the third operational amplifier. The second input terminal of the third operational amplifier is connected to the second pin, the third input terminal of the third operational amplifier is connected to the power supply terminal, the first output terminal of the third operational amplifier is connected to the base of the seventh bipolar transistor, and the second output terminal of the third operational amplifier is connected to the ground terminal. The collector of the seventh bipolar transistor is connected to the power supply terminal, and the emitter of the seventh bipolar transistor is connected to one end of the eighth resistor. The other end of the eighth resistor is connected to the base of the eighth bipolar transistor; The collector of the eighth bipolar transistor is connected to the gate of the sixth field-effect transistor, one end of the ninth resistor, and the gate of the seventh field-effect transistor, respectively. The emitter of the eighth bipolar transistor is connected to the gate of the eighth field-effect transistor, one end of the second buzzer, and the positive terminal of the red light-emitting diode, respectively. The drain of the sixth field-effect transistor is connected to the second pin, and the source of the sixth field-effect transistor is connected to the other end of the ninth resistor and the source of the seventh field-effect transistor, respectively. The drain of the seventh field-effect transistor is connected to the third pin; The drain of the eighth field-effect transistor is connected to the first pin, and the source of the eighth field-effect transistor is connected to the fourth pin. The other end of the second buzzer is connected to the grounding terminal; The negative terminal of the red LED is connected to one end of the tenth resistor, and the other end of the tenth resistor is connected to the ground terminal.

[0042] Here, when the voltage at the circuit location where the first pin is connected is less than the voltage at the circuit location where the second pin is connected, and the voltage at the circuit location where the second pin is connected is less than the power supply voltage of the fault detection circuit, the first output terminal of the first operational amplifier outputs a low-level signal, causing the base of the sixth bipolar transistor to receive a low-level signal and turn on. This then causes the power supply voltage of the fault detection circuit to be output to the third operational amplifier. Afterward, the first output terminal of the third operational amplifier outputs a high-level signal, causing the base of the seventh bipolar transistor to receive a high-level signal and turn on. Then, the seventh bipolar transistor pulls down the gate voltage of the sixth field-effect transistor, causing the sixth field-effect transistor to turn on. Next, the drain voltage of the sixth field-effect transistor triggers the base of the eighth bipolar transistor, causing the eighth bipolar transistor to turn on. Then, the eighth bipolar transistor pulls down the gate voltage of the seventh field-effect transistor, causing the seventh field-effect transistor to conduct. It then outputs the voltage at the circuit location connected to the second pin through the circuit location connected to the third pin (i.e., the voltage at the circuit location connected to the third pin is equal to the voltage at the circuit location connected to the second pin). Afterward, the conduction of the eighth bipolar transistor causes the second buzzer and the red LED to operate, resulting in a red light and buzzer. Subsequently, the conduction of the eighth bipolar transistor also triggers the gate of the eighth field-effect transistor, causing it to conduct again and output the voltage at the circuit location connected to the first pin through the circuit location connected to the fourth pin (i.e., the voltage at the circuit location connected to the fourth pin is equal to the voltage at the circuit location connected to the first pin).

[0043] In some embodiments of this disclosure, the sixth and seventh field-effect transistors are P-type field-effect transistors, the eighth field-effect transistor is an N-type field-effect transistor, the seventh and eighth bipolar transistors are NPN bipolar transistors, and the sixth bipolar transistor is a PNP bipolar transistor.

[0044] In some implementations, the fault location of the energy storage cabinet can be the power system. The first pin is connected to the circuit corresponding to the fault location of the energy storage cabinet, which is the negative terminal of the power system bus. The second pin is connected to the circuit corresponding to the fault location of the energy storage cabinet, which is the positive terminal of the power system bus. The third and fourth pins can both be connected to an oscilloscope (which can be installed inside the energy storage cabinet to record the voltage output by the third and fourth pins). For example, when the processing terminal detects a fault in the detection circuit, the corresponding prompt information is indicated by a red light and a buzzer. (Continuous beeping) When the output voltage of the third pin is higher than the normal voltage and the output voltage of the fourth pin is close to 0, it indicates that the voltage at the circuit location connected to the first pin is less than the voltage at the circuit location connected to the second pin, and the voltage at the circuit location connected to the second pin is greater than the power supply voltage of the fault detection circuit. It can be determined that the fault detection result of the energy storage cabinet is that there is an overvoltage abnormality in the power system bus. When the prompt information corresponding to the fault detection circuit is not a light or beep, it can be determined that the fault detection result of the energy storage cabinet is that the positive and negative terminals of the power system bus are reversed.

[0045] Taking the fault location of the energy storage cabinet as an example of the power system, the fault detection circuit also includes a ninth bipolar transistor, an eleventh resistor, a tenth bipolar transistor, a ninth field-effect transistor, a twelfth resistor, and a tenth field-effect transistor, wherein: The emitter of the ninth bipolar transistor is connected to the second pin, the base of the ninth bipolar transistor is connected to the first output terminal of the third operational amplifier, and the collector of the ninth bipolar transistor is connected to one end of the eleventh resistor. The other end of the eleventh resistor is connected to the base of the tenth bipolar transistor; The emitter of the tenth bipolar transistor is connected to the gate of the eighth field-effect transistor, one end of the second buzzer, and the positive terminal of the red light-emitting diode, respectively. The collector of the tenth bipolar transistor is connected to the gate of the ninth field-effect transistor, one end of the twelfth resistor, and the gate of the tenth field-effect transistor, respectively. The drain of the ninth field-effect transistor is connected to the second pin, and the source of the ninth field-effect transistor is connected to the other end of the twelfth resistor and the source of the tenth field-effect transistor, respectively. The drain of the tenth field-effect transistor is connected to the third pin.

[0046] Here, when the voltage at the circuit location where the first pin is connected is less than the voltage at the circuit location where the second pin is connected, and the voltage at the circuit location where the second pin is connected is greater than the power supply voltage of the fault detection circuit, the first output terminal of the first operational amplifier outputs a low-level signal, causing the base of the sixth bipolar transistor to receive a low-level signal and turn on. This then causes the power supply voltage of the fault detection circuit to be output to the third operational amplifier. Afterwards, the first output terminal of the third operational amplifier outputs a low-level signal, causing the base of the ninth bipolar transistor to receive a low-level signal and turn on. Then, the ninth bipolar transistor pulls down the gate voltage of the ninth field-effect transistor, causing the ninth field-effect transistor to turn on. Next, the drain voltage of the ninth field-effect transistor triggers the base of the tenth bipolar transistor, causing the tenth bipolar transistor to turn on. Then, the tenth bipolar transistor pulls down the gate voltage of the tenth field-effect transistor, causing the tenth field-effect transistor to conduct. It then outputs the voltage at the circuit location connected to the second pin through the circuit location connected to the third pipe (i.e., the voltage at the circuit location connected to the third pin is equal to the voltage at the circuit location connected to the second pin). Afterward, the conduction of the tenth bipolar transistor causes the second buzzer and the red LED to operate, resulting in a red light and buzzer. Subsequently, the conduction of the tenth bipolar transistor also triggers the gate of the eighth field-effect transistor, causing it to conduct and output the voltage at the circuit location connected to the first pipe through the circuit location connected to the fourth pipe (i.e., the voltage at the circuit location connected to the fourth pin is equal to the voltage at the circuit location connected to the first pin).

[0047] In some embodiments of this disclosure, the ninth and tenth field-effect transistors are P-type field-effect transistors (and both are high-voltage field-effect transistors to avoid the risk of breakdown), the ninth bipolar transistor is a PNP type bipolar transistor, and the tenth bipolar transistor is an NPN type bipolar transistor.

[0048] See also: Figure 4 The diagram shows a structural schematic of another fault detection circuit according to some embodiments of the present disclosure. For example... Figure 4As shown, 1 is the first pin, 2 is the second pin, 3 is the third pin, 4 is the fourth pin, V0 is the power supply voltage of the fault detection circuit, operational amplifier 1 is the first operational amplifier, operational amplifier 3 is the third operational amplifier, bipolar transistor T6 is the sixth bipolar transistor, bipolar transistor T7 is the seventh bipolar transistor, bipolar transistor T8 is the eighth bipolar transistor, bipolar transistor T9 is the ninth bipolar transistor, bipolar transistor T10 is the tenth bipolar transistor, R7 is the seventh resistor, R8 is the eighth resistor, R9 is the ninth resistor, R10 is the tenth resistor, R11 is the eleventh resistor, R12 is the twelfth resistor, field-effect transistor 6 is the sixth field-effect transistor, field-effect transistor 7 is the seventh field-effect transistor, field-effect transistor 8 is the eighth field-effect transistor, field-effect transistor 9 is the ninth field-effect transistor, field-effect transistor 10 is the tenth field-effect transistor, and buzzer 2 is the second buzzer.

[0049] Figure 5 A block diagram of a fault detection system for an energy storage cabinet according to some embodiments of this disclosure is shown. The various embodiments in this specification are described in a progressive manner, with reference to each other for similar or identical parts. Each embodiment focuses on describing the differences from other embodiments. In particular, the device embodiments are basically similar to the method embodiments, so the description is relatively simple, and relevant parts can be referred to the description of the method embodiments. Figure 5 As shown, the fault detection system 500 for energy storage cabinets may include at least a location determination module 502, configured to determine the fault location of the energy storage cabinet based on its operating status. The fault detection system 500 also includes an information acquisition module 504, configured to acquire the corresponding prompt information from the fault detection circuit based on the fault location of the energy storage cabinet. The fault detection circuit is magnetically attached to the cabinet door of the energy storage cabinet and has at least two pins, each pin connected to the circuit corresponding to the fault location of the energy storage cabinet. Furthermore, the fault detection system 500 also includes a result determination module 506, configured to determine the fault detection result of the energy storage cabinet based on the circuit location where each pin is connected to the fault location of the energy storage cabinet and the prompt information corresponding to the fault detection circuit.

[0050] In the above embodiments, implementation can be achieved, in whole or in part, through software, hardware, firmware, or any combination thereof. When implemented in software, it can be implemented, in whole or in part, as a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of this specification are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in or transmitted through a computer-readable storage medium. The computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., coaxial cable, fiber optic, Digital Subscriber Line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium accessible to a computer or a data storage device such as a server or data center that integrates one or more available media. The available media may be magnetic media (e.g., floppy disks, hard disks, magnetic tapes), optical media (e.g., Digital Versatile Discs (DVDs)), or semiconductor media (e.g., Solid State Disks (SSDs)).

[0051] Figure 6 Block diagrams of electronic devices that can implement various embodiments of the present disclosure are shown. For example... Figure 6 As shown, the electronic device 600 includes a processor 601, which can perform various appropriate actions and processes based on computer program instructions loaded into random access memory (RAM) 603 according to computer program instructions stored in read-only memory (ROM) 602. The RAM 603 may also store various programs and data required for the operation of the electronic device 600. The processor 601, ROM 602, and RAM 603 are interconnected via a bus 604. An input / output (I / O) interface 605 is also connected to the bus 604.

[0052] The various processes and procedures described above, such as method 200, can be executed by processor 601. For example, in some embodiments, method 200 may be implemented as a software program tangibly contained in a machine-readable medium. In some embodiments, part or all of the software program may be loaded into and / or installed onto electronic device 600 via ROM 602. When the software program is loaded into RAM 603 and executed by processor 601, one or more actions of method 200 described above may be performed.

[0053] The functions described above in this document can be performed at least in part by one or more hardware logic components. For example, exemplary types of hardware logic components that can be used, without limitation, include: field programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SoCs), payload programmable logic devices (CPLDs), and so on.

[0054] The program code used to implement the methods of this disclosure may be written in any combination of one or more programming languages. This program code may be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing apparatus, such that when executed by the processor or controller, the program code causes the functions / operations specified in the flowcharts and / or block diagrams to be implemented. The program code may be executed entirely on a machine, partially on a machine, as a standalone software package partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0055] This disclosure can be a method, apparatus, system, and / or program product. The program product may include a machine-readable storage medium on which machine-readable program instructions for performing various aspects of this disclosure are loaded. The machine-readable program instructions described herein can be downloaded from the machine-readable storage medium to various computing / processing devices, or downloaded via a network, such as the Internet, a local area network, a wide area network, and / or a wireless network, to an external computer or external storage device. The network may include copper transmission cables, fiber optic transmissions, wireless transmissions, routers, firewalls, switches, gateway computers, and / or edge servers. A network adapter card or network interface in each computing / processing device receives the machine-readable program instructions from the network and forwards them to the machine-readable storage medium in the respective computing / processing device.

[0056] Machine program instructions used to perform the operations of this disclosure may be assembly instructions, instruction set architecture (ISA) instructions, machine instructions, machine-dependent instructions, microcode, firmware instructions, state setting data, or source code or object code written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Smalltalk, C++, etc., and conventional procedural programming languages ​​such as the "C" language or similar programming languages. Machine-readable program instructions may be executed entirely on a user's computer, partially on a user's computer, as a standalone software package, partially on a user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving a remote computer, the remote computer may be connected to the user's computer via any type of network—including a local area network (LAN) or a wide area network (WAN)—or may be connected to an external computer (e.g., via the Internet using an Internet service provider). In some embodiments, electronic circuitry, such as programmable logic circuitry, field-programmable gate arrays (FPGAs), or programmable logic arrays (PLAs), is personalized by utilizing state information from the machine-readable program instructions to implement various aspects of this disclosure.

[0057] In the context of this disclosure, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. Machine-readable media can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing. Furthermore, although operations are depicted in a specific order, this should be understood as requiring that such operations be performed in the specific order shown or in sequential order, or requiring that all illustrated operations be performed to achieve the desired result. In certain environments, multitasking and parallel processing may be advantageous. Similarly, while several specific implementation details are included in the foregoing discussion, these should not be construed as limiting the scope of this disclosure. Certain features described in the context of individual embodiments may also be implemented in combination in a single implementation. Conversely, various features described in the context of a single implementation may also be implemented individually or in any suitable sub-combination in multiple implementations.

[0058] Although the subject matter has been described using language specific to structural features and / or methodological logic, it should be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or actions described above. Rather, the specific features and actions described above are merely illustrative examples of implementing the claims.

Claims

1. A fault detection method for an energy storage cabinet, characterized in that, include: The location of the fault in the energy storage cabinet is determined based on its operating status. Based on the fault location of the energy storage cabinet, obtain the prompt information corresponding to the fault detection circuit; The fault detection circuit is magnetically attached to the door of the energy storage cabinet. The fault detection circuit has at least two pins, and each pin is connected to the circuit corresponding to the fault location of the energy storage cabinet. as well as Based on the circuit location corresponding to the fault location of each pin connected to the energy storage cabinet and the prompt information corresponding to the fault detection circuit, the fault detection result of the energy storage cabinet is determined. At least two pins are included, namely, pin 1, pin 2, pin 3, and pin 4; The method of determining the fault detection result of the energy storage cabinet based on the circuit location corresponding to the fault location of each pin connected to the energy storage cabinet and the prompt information corresponding to the fault detection circuit includes: Based on the fact that the circuit position corresponding to the fault location of the first pin connected to the energy storage cabinet is the positive terminal of the power supply of the energy storage cabinet, the circuit position corresponding to the fault location of the second pin connected to the energy storage cabinet is the negative terminal of the power supply of the energy storage cabinet, the circuit position corresponding to the fault location of the third pin connected to the energy storage cabinet is the positive terminal of the power input of the display and control system of the energy storage cabinet, and the circuit position corresponding to the fault location of the fourth pin connected to the energy storage cabinet is the negative terminal of the power input of the display and control system of the energy storage cabinet, it is determined whether the prompt information corresponding to the fault detection circuit is a light-up buzzer. In response to determining that the prompt message corresponding to the fault detection circuit is an illuminated light and a buzzer, the fault detection result of the energy storage cabinet is determined to be an abnormality in the display and control system; or In response to determining that the prompt message corresponding to the fault detection circuit is not a light-up buzzer, the fault detection result of the energy storage cabinet is determined to be a power supply abnormality; The fault detection circuit includes a first operational amplifier, a first resistor, a first bipolar transistor, a second operational amplifier, a second bipolar transistor, a second resistor, a third bipolar transistor, a first field-effect transistor, a second field-effect transistor, a third resistor, a third field-effect transistor, a first buzzer, a green light-emitting diode, and a fourth resistor, wherein: The first input terminal of the first operational amplifier is connected to the first pin, the second input terminal of the first operational amplifier is connected to the second pin, the third input terminal of the first operational amplifier is connected to the power supply terminal, the first output terminal of the first operational amplifier is connected to one end of the first resistor, and the second output terminal of the first operational amplifier is connected to the ground terminal. The other end of the first resistor is connected to the base of the first bipolar transistor; The collector of the first bipolar transistor is connected to the power supply terminal, and the emitter of the first bipolar transistor is connected to the first input terminal of the second operational amplifier. The second input terminal of the second operational amplifier is connected to the first pin, the third input terminal of the second operational amplifier is connected to the power supply terminal, the first output terminal of the second operational amplifier is connected to the base of the second bipolar transistor, and the second output terminal of the second operational amplifier is connected to the ground terminal. The collector of the second bipolar transistor is connected to the power supply terminal, and the emitter of the second bipolar transistor is connected to one end of the second resistor; The other end of the second resistor is connected to the base of the third bipolar transistor; The collector of the third bipolar transistor is connected to the gate of the first field-effect transistor, one end of the third resistor, and the gate of the second field-effect transistor, respectively. The emitter of the third bipolar transistor is connected to the gate of the third field-effect transistor, one end of the first buzzer, and the positive terminal of the green light-emitting diode, respectively. The drain of the first field-effect transistor is connected to the first pin, and the source of the first field-effect transistor is connected to the source of the second field-effect transistor and the other end of the third resistor, respectively. The drain of the second field-effect transistor is connected to the third pin; The drain of the third field-effect transistor is connected to the second pin, and the source of the third field-effect transistor is connected to the fourth pin. The other end of the first buzzer is connected to the grounding terminal; The negative terminal of the green light-emitting diode is connected to one end of the fourth resistor, and the other end of the fourth resistor is connected to the ground terminal; The fault detection circuit further includes a seventh resistor, a sixth bipolar transistor, a third operational amplifier, a seventh bipolar transistor, an eighth resistor, an eighth bipolar transistor, a sixth field-effect transistor, a seventh field-effect transistor, a ninth resistor, an eighth field-effect transistor, a second buzzer, a red light-emitting diode, and a tenth resistor, wherein: One end of the seventh resistor is connected to the first output terminal of the first operational amplifier, and the other end of the seventh resistor is connected to the base of the sixth bipolar transistor. The emitter of the sixth bipolar transistor is connected to the power supply terminal, and the collector of the sixth bipolar transistor is connected to the first input terminal of the third operational amplifier. The second input terminal of the third operational amplifier is connected to the second pin, the third input terminal of the third operational amplifier is connected to the power supply terminal, the first output terminal of the third operational amplifier is connected to the base of the seventh bipolar transistor, and the second output terminal of the third operational amplifier is connected to the ground terminal. The collector of the seventh bipolar transistor is connected to the power supply terminal, and the emitter of the seventh bipolar transistor is connected to one end of the eighth resistor. The other end of the eighth resistor is connected to the base of the eighth bipolar transistor; The collector of the eighth bipolar transistor is connected to the gate of the sixth field-effect transistor, one end of the ninth resistor, and the gate of the seventh field-effect transistor, respectively. The emitter of the eighth bipolar transistor is connected to the gate of the eighth field-effect transistor, one end of the second buzzer, and the positive terminal of the red light-emitting diode, respectively. The drain of the sixth field-effect transistor is connected to the second pin, and the source of the sixth field-effect transistor is connected to the other end of the ninth resistor and the source of the seventh field-effect transistor, respectively. The drain of the seventh field-effect transistor is connected to the third pin; The drain of the eighth field-effect transistor is connected to the first pin, and the source of the eighth field-effect transistor is connected to the fourth pin. The other end of the second buzzer is connected to the grounding terminal; The negative terminal of the red LED is connected to one end of the tenth resistor, and the other end of the tenth resistor is connected to the ground terminal.

2. The method according to claim 1, characterized in that, The fault detection circuit further includes a fourth bipolar transistor, a fifth resistor, a fifth bipolar transistor, a fourth field-effect transistor, a sixth resistor, and a fifth field-effect transistor, wherein: The emitter of the fourth bipolar transistor is connected to the first pin, the base of the fourth bipolar transistor is connected to the first output terminal of the second operational amplifier, and the collector of the fourth bipolar transistor is connected to one end of the fifth resistor. The other end of the fifth resistor is connected to the base of the fifth bipolar transistor; The emitter of the fifth bipolar transistor is connected to the gate of the third field-effect transistor, one end of the first buzzer, and the anode of the green light-emitting diode, respectively. The collector of the fifth bipolar transistor is connected to the gate of the fourth field-effect transistor, one end of the sixth resistor, and the gate of the fifth field-effect transistor, respectively. The drain of the fourth field-effect transistor is connected to the first pin, and the source of the fourth field-effect transistor is connected to the other end of the sixth resistor and the source of the fifth field-effect transistor, respectively. The drain of the fifth field-effect transistor is connected to the third pin.

3. The method according to claim 2, characterized in that, The fault detection circuit further includes a ninth bipolar transistor, an eleventh resistor, a tenth bipolar transistor, a ninth field-effect transistor, a twelfth resistor, and a tenth field-effect transistor, wherein: The emitter of the ninth bipolar transistor is connected to the second pin, the base of the ninth bipolar transistor is connected to the first output terminal of the third operational amplifier, and the collector of the ninth bipolar transistor is connected to one end of the eleventh resistor. The other end of the eleventh resistor is connected to the base of the tenth bipolar transistor; The emitter of the tenth bipolar transistor is connected to the gate of the eighth field-effect transistor, one end of the second buzzer, and the positive terminal of the red light-emitting diode, respectively. The collector of the tenth bipolar transistor is connected to the gate of the ninth field-effect transistor, one end of the twelfth resistor, and the gate of the tenth field-effect transistor, respectively. The drain of the ninth field-effect transistor is connected to the second pin, and the source of the ninth field-effect transistor is connected to the other end of the twelfth resistor and the source of the tenth field-effect transistor, respectively. The drain of the tenth field-effect transistor is connected to the third pin.

4. The method according to claim 3, characterized in that, The first field-effect transistor, the second field-effect transistor, the fourth field-effect transistor, the fifth field-effect transistor, the sixth field-effect transistor, the seventh field-effect transistor, the ninth field-effect transistor, and the tenth field-effect transistor are all P-type field-effect transistors, and the third field-effect transistor and the eighth field-effect transistor are both N-type field-effect transistors.

5. A fault detection system for an energy storage cabinet, characterized in that, The system is applied to the method as described in any one of claims 1-4, the system comprising: The location determination module is configured to determine the fault location of the energy storage cabinet based on its operating status. An information acquisition module is configured to acquire prompt information corresponding to a fault detection circuit based on the fault location of the energy storage cabinet; the fault detection circuit is magnetically attached to the cabinet door of the energy storage cabinet, and the fault detection circuit has at least two pins, each pin being connected to a circuit corresponding to the fault location of the energy storage cabinet; and The result determination module is configured to determine the fault detection result of the energy storage cabinet based on the circuit location corresponding to the fault location of each of the pins connected to the energy storage cabinet and the prompt information corresponding to the fault detection circuit.

6. A computer-readable storage medium having a computer program stored thereon, the computer-readable storage medium storing instructions that, when executed on a computer or processor, cause the computer or processor to perform the steps of the method as claimed in any one of claims 1-4.

7. An electronic device, characterized in that, include: One or more processors, and A memory associated with the one or more processors, the memory being used to store program instructions that, when read and executed by the one or more processors, perform the steps of the method according to any one of claims 1-4.

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