A photoresist rinsing solution to prevent collapse and a photolithography method for forming photoresist patterns.

CN121028475BActive Publication Date: 2026-04-03SUZHOU RAINBOW MATERIALS CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-10-31
Publication Date
2026-04-03

AI Technical Summary

Technical Problem

In the semiconductor manufacturing process, photoresist patterns are prone to collapse and sticking due to the surface tension of water after development, and the hydrophobic groups remaining after development can cause pattern defects.

Method used

By using a combination of nonionic and anionic surfactants, along with an organic base, surface tension is reduced and wetting and penetration are improved. The mechanical properties are enhanced through cross-linking reactions, preventing photoresist lines from collapsing and reducing defects caused by microbubbles.

Benefits of technology

It effectively prevents photoresist pattern collapse, reduces pattern defects, improves yield, and ensures that the resolution and surface roughness of the photoresist pattern meet process requirements.

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Abstract

This invention discloses a photoresist rinsing solution to prevent collapse, comprising a nonionic surfactant, an anionic surfactant, an organic base, and a solvent. The nonionic surfactant in the rinsing solution has a weight content of 1000-2000 ppm. The anionic surfactant is an alkyl ether phosphate, which is a mixture of monoalkyl ether phosphate and dialkyl ether phosphate. The solvent is deionized water. The static surface tension of the rinsing solution at 20°C is 25-30 mN / m. This invention, by combining a nonionic surfactant with anionic surfactant, can improve the activity of the surfactant, further reduce the surface tension, reduce the stress within the photoresist lines, and thus prevent structural collapse.
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