Heat dissipation device and method for high power density devices

Abstract

The application relates to the technical field of heat dissipation, in particular to a heat dissipation device and method for a high-power-density device. The heat dissipation device comprises a heat dissipation bottom surface, heat dissipation fins and a heat conduction layer. The heat dissipation fins and the heat conduction layer are connected to the two sides of the heat dissipation bottom surface. The heat conduction layer is in contact with the high-power-density device, and the area of the contact between the heat conduction layer and the high-power-density device is smaller than the area of the contact between the heat conduction layer and the heat dissipation bottom surface. The heat conduction layer is arranged to make the heat generated by the high-power-density device be radiated along the direction perpendicular to the contact surface between the heat dissipation device and the high-power-density device, and also be conducted to the surroundings of the high-power-density device along the heat conduction layer. Compared with the traditional heat dissipation fins or heat sink, the heat dissipation effect of the heat dissipation device is greatly enhanced, the upper limit of the heat power density of the laser, LED (light-emitting diode), TR component and other high-power devices under the condition of single use of the heat dissipation fins or heat sink is improved, and the use cost of the high-power-density device is reduced.

Description

[0001] This application claims priority to Chinese Patent Application No. 202510058154.4, filed on January 14, 2025, the entire contents of which are incorporated herein by reference as if fully set forth herein. Technical Field

[0002] This invention relates to the field of heat dissipation technology, and in particular to a heat dissipation device and method for high power density devices. Background Technology

[0003] Heat dissipation, also known as heat dissipation or thermal management, has a crucial impact on the performance of high-power devices (operating power ranges from 50 to 1000 W, or even higher) such as lasers, LEDs (light-emitting diodes), and TR components. These devices generate heat during operation, and if this heat cannot be effectively dissipated, the internal temperature will rise, leading to a series of problems such as performance degradation and shortened lifespan.

[0004] High-power devices such as lasers, LEDs (light-emitting diodes), and TR modules typically experience a decline in electrical and optical performance with increasing temperature during operation. For example, excessively high temperatures can lead to reduced light output and color shift in LEDs. Furthermore, sustained high temperatures accelerate the aging process of materials, significantly shortening the expected lifespan of high-power devices. Particularly for semiconductor devices, high temperatures can exacerbate the formation and development of crystal defects, thereby affecting the long-term reliability of the device.

[0005] Therefore, to ensure that high-power devices can operate at their best, engineers employ various methods to improve their heat dissipation. One common approach is to install additional heat sinks or radiators on high-power devices to increase their surface area in contact with the air, thus helping them transfer heat to the surrounding environment more quickly.

[0006] However, most existing heat sinks or radiators can only dissipate heat along the direction perpendicular to the surface of the high-power device chip. The heat dissipation capacity is limited by the size of the high-power device, resulting in a low heat dissipation power density for high-power devices that only use heat sinks or radiators for heat dissipation. If the heat dissipation power density of the high-power device is high, multiple heat dissipation methods are required to control the heat dissipation of the high-power device, resulting in a high cost of using high-power devices. Summary of the Invention

[0007] The purpose of this invention is to overcome the problem that existing high-power devices with high heat density cannot maintain optimal operating conditions when using only heat sinks or radiators, and require multiple heat dissipation methods to control the heat dissipation of high-power devices, resulting in high operating costs. This invention provides a heat dissipation device and method for high-power density devices.

[0008] To address the problems existing in the prior art, this invention provides a heat dissipation device for high power density devices. The heat dissipation device includes a heat dissipation base surface, a plurality of heat dissipation fins, and a thermally conductive layer. The heat dissipation fins and the thermally conductive layer are connected to both sides of the heat dissipation base surface. The side of the thermally conductive layer away from the heat dissipation base surface is used to connect the high power density device. Furthermore, the contact area between the thermally conductive layer and the high power density device is smaller than the contact area between the thermally conductive layer and the heat dissipation base surface.

[0009] According to a preferred embodiment, the heat dissipation power density of the high power density device is 3.7~423 W / cm². 2 .

[0010] According to a preferred embodiment, the heat dissipation device further includes a mounting housing. The mounting housing is used to mount the high-power-density device to the heat dissipation device, and also serves to dissipate heat from the high-power-density device. The mounting housing allows the high-power-density device to be tightly fitted to the thermally conductive layer.

[0011] According to a preferred embodiment, the material used to fabricate the thermally conductive layer includes at least one of graphene, graphite, copper, silver, and gold.

[0012] The present invention also provides a heat dissipation method for high power density devices, including using the heat dissipation device provided by the present invention to dissipate heat from the high power density devices.

[0013] This invention also provides a high-power LED light source, including an LED chip and a heat dissipation device. The LED chip includes a substrate and a plurality of LED beads, which are arranged on one side surface of the substrate through an encapsulating layer. Preferably, the arrangement of the LED beads on the substrate is as follows: at least two LED beads are connected in series to form a primary lamp group; at least two primary lamp groups are connected in parallel to form a secondary lamp group; and each secondary lamp group arranges the LED beads on the substrate by connecting them end-to-end. Preferably, the sum of the voltage differences between two primary lamp groups is less than the maximum isolation voltage between two adjacent LED beads. The heat dissipation device includes a heat dissipation base surface, a plurality of heat dissipation fins, and a thermally conductive layer. The heat dissipation fins and the thermally conductive layer are connected to both sides of the heat dissipation base surface. The side of the thermally conductive layer away from the heat dissipation base surface is connected to the substrate. The substrate is connected to the middle or end of the thermally conductive layer. Preferably, the substrate is connected to the middle of the thermally conductive layer.

[0014] According to a preferred embodiment, the operating voltage of the LED chip is 300~3000V.

[0015] According to a preferred embodiment, the heat dissipation power density of the LED chip is 3.7~423 W / cm². 2 .

[0016] According to a preferred embodiment, the power of the LED chip is 50~1000W.

[0017] According to a preferred embodiment, the thermally conductive layer is larger than the substrate in size, and is used to conduct the heat generated when the LED chip emits light along the extension direction of the thermally conductive layer. Preferably, the material used to fabricate the thermally conductive layer includes at least one of graphene, graphite, copper, silver, and gold. The thickness of the thermally conductive layer is less than its length and width, such that the thermal conductivity of the thermally conductive layer in its extension direction is higher than that in its extension direction.

[0018] According to a preferred embodiment, the area of ​​the thermally conductive layer in contact with the substrate is smaller than the area of ​​the thermally conductive layer in contact with the heat dissipation bottom surface. When the thermally conductive layer is connected to the substrate, the thermally conductive layer covers the substrate.

[0019] This invention also provides a method for manufacturing a high-power LED light source, comprising: arranging a plurality of LED beads on one side surface of a substrate and isolating and encapsulating them with an encapsulating adhesive layer; connecting a thermally conductive layer to the side surface of the substrate away from the LED beads, wherein the size of the thermally conductive layer is larger than the size of the substrate. Preferably, the arrangement of the plurality of LED beads on the substrate is as follows: at least two LED beads are connected in series to form a primary lamp group; at least two primary lamp groups are connected in parallel to form a secondary lamp group; the secondary lamp groups are arranged on the substrate by connecting the plurality of LED beads end to end; wherein the sum of the voltage differences between two primary lamp groups is less than the maximum isolation voltage between two adjacent LED beads; the maximum isolation voltage is determined by adjusting the thickness of the encapsulating adhesive layer and / or the spacing between two adjacent LED beads. Preferably, when the thermally conductive layer is connected to the substrate, the thermally conductive layer covers the substrate. Preferably, the substrate is connected to the middle of the thermally conductive layer.

[0020] According to a preferred embodiment, the manufacturing method of the high-power LED light source provided by the present invention further includes: connecting a heat dissipation bottom surface to the side of the heat-conducting layer away from the substrate; connecting a plurality of heat dissipation fins to the side of the heat dissipation bottom surface away from the heat-conducting layer; and providing a mounting housing on the side of the heat-conducting layer connected to the substrate. The mounting housing is connected to the heat dissipation bottom surface and clamps the substrate and the heat-conducting layer.

[0021] The present invention also provides a high-power heat dissipation device. The high-power heat dissipation device includes: a heat dissipation base surface, a plurality of heat dissipation fins, and a heat-conducting layer. The heat dissipation fins and the heat-conducting layer are disposed on both sides of the heat dissipation base surface. A high-power heat source is connected to the center of the side of the heat-conducting layer away from the heat dissipation base surface. Preferably, the heat dissipation power density of the high-power heat source is 3.7~423 W / cm³. 2 .

[0022] This invention also provides a high-power LED lighting system, comprising: a high-power LED light source, a driving power supply, a sensor, and a processor. Preferably, the high-power LED light source is the high-power LED light source provided by this invention, used for lighting. The driving power supply is used to supply power to the LED light source. The sensor is used to collect control parameters of the LED light source; wherein, the control parameters are one or a combination of several of voltage, current, light source temperature, and ambient temperature. The processor acquires the control parameters and adjusts the output voltage of the driving power supply according to the control parameters, thereby adjusting the current in the internal circuit of the LED light source.

[0023] According to a preferred embodiment, the LED light source further includes a heat dissipation device. The heat dissipation device includes a mounting housing, a heat dissipation base, a plurality of heat dissipation fins, and a thermally conductive layer. The heat dissipation fins and the thermally conductive layer are disposed on both sides of the heat dissipation base. The side of the thermally conductive layer away from the heat dissipation base is connected to the substrate. The substrate is connected to the middle portion of the thermally conductive layer. The size of the thermally conductive layer is larger than the size of the substrate, and it is used to conduct the heat generated when the LED light source emits light along the extension direction of the thermally conductive layer. The mounting housing is connected to the heat dissipation base and clamps the substrate and the thermally conductive layer.

[0024] According to a preferred embodiment, the sensor includes a current sensor disposed on each primary lamp group for detecting the current of the primary lamp group. The processor determines the on / off status of each primary lamp group through the current sensor and adjusts the output voltage of the drive power supply according to the on / off status of each primary lamp group.

[0025] According to a preferred embodiment, the sensor further includes a temperature sensor for detecting at least the temperature of the LED light source. The processor is capable of determining a driving scheme based on the detection data from the current sensor and the temperature sensor, and adjusting the output voltage of the driving power supply according to the driving scheme.

[0026] According to a preferred embodiment, the driving scheme includes three driving schemes.

[0027] First driving scheme: The processor adjusts the output voltage and adjustment range of the driving power supply through upper and lower limit control. Preferably, the processor presets several limits: second lower control limit < first lower control limit < control center line < first upper control limit < second upper control limit. The processor determines the output voltage and adjustment range of the driving power supply by detecting the current or temperature value of the LED light source and vertically comparing the detected value with each limit.

[0028] The second driving scheme: The processor detects the loop current and light source temperature of the LED light source through sensors, calculates the real-time slope of the loop current and light source temperature change curves, and sends a voltage adjustment command to the driving power supply to control the rate of change of the loop current and light source temperature.

[0029] The third driving scheme: The processor detects the loop current, light source temperature, and heat sink temperature of the LED light source through sensors, and controls the output of the driving power supply based on the deviation between the detected value and the preset value, so that the detected value is close to the preset value.

[0030] The present invention also provides a high-power laser source. The high-power laser source is equipped with a heat dissipation device provided by the present invention for heat dissipation.

[0031] According to a preferred embodiment, the heating power density of the high-power laser light source is 3.7~423 W / cm². 2 .

[0032] Compared with the prior art, the beneficial effects of the present invention are as follows: The heat dissipation device provided by this invention includes a heat dissipation base, heat dissipation fins, and a thermally conductive layer. The heat dissipation fins and the thermally conductive layer are disposed on both sides of the heat dissipation base. The thermally conductive layer contacts the high-power-density device, and the contact area between the thermally conductive layer and the high-power-density device is smaller than the contact area between the thermally conductive layer and the heat dissipation base. By setting the thermally conductive layer, this invention allows the heat generated by the high-power-density device to radiate along a direction perpendicular to the contact surface between the heat dissipation device and the high-power-density device, while also being conducted along the thermally conductive layer to the surrounding area of ​​the high-power-density device. Compared to traditional heat sinks or radiators, the heat dissipation effect of this invention is greatly enhanced, increasing the upper limit of heat generation power density for high-power devices such as lasers, LEDs (light-emitting diodes), and TR components when using only heat sinks or radiators, and reducing the cost of using high-power-density devices. Attached image description: Figure 1 This is a schematic diagram of a heat dissipation structure according to a preferred embodiment of the present invention; Figure 2 This is a schematic diagram of a high-power LED light source according to a preferred embodiment of the present invention; Figure 3 A schematic diagram of the structure of an LED chip in COB packaging; Figure 4 This is a schematic diagram of a high-power LED lighting system according to a preferred embodiment of the present invention; Figure 5 This is a schematic diagram of a high-power LED lighting system according to another preferred embodiment of the present invention.

[0033] Figure label: LED chip 100, substrate 110, LED beads 120, encapsulating adhesive layer 130, gold wire 140. Heat dissipation device 200, heat dissipation base 210, heat dissipation fins 220, heat conduction layer 230, mounting housing 240. Detailed Implementation

[0034] The present invention will now be described in further detail with reference to specific embodiments. However, this should not be construed as limiting the scope of the present invention to the following embodiments; all technologies implemented based on the content of the present invention fall within the scope of the present invention.

[0035] Unless otherwise specified, the use of terms such as "upper," "lower," "left," "right," "center," "inner," and "outer" to indicate orientation or positional relationships in the description of specific embodiments of the present invention is based on the orientation or positional relationships shown in the accompanying drawings, or the orientation or positional relationship in which the product / equipment / device is typically placed during use. These terms are merely for the purpose of facilitating the description of the present invention or simplifying the description in specific embodiments, enabling those skilled in the art to quickly understand the solution, and do not indicate or imply that a particular device / component / element must have a specific orientation, or be constructed and operated in a specific positional relationship. Therefore, they should not be construed as limitations on the present invention.

[0036] Furthermore, the use of terms such as "horizontal," "vertical," "suspended," and "parallel" does not imply that the corresponding device / component / element must be absolutely horizontal, vertical, suspended, or parallel, but rather that it can be slightly tilted or have a deviation. For example, "horizontal" merely means that its direction is more horizontal relative to "vertical," not that the structure must be completely horizontal, but that it can be slightly tilted. Alternatively, it can be simplified to mean that the corresponding device / component / element, when set in a "horizontal," "vertical," "suspended," or "parallel" direction, can have an error / deviation of ±10% relative to the corresponding direction, more preferably within ±8%, more preferably within ±6%, more preferably within ±5%, and more preferably within ±4%. As long as the corresponding device / component / element is within the error / deviation range, it can still achieve its function in the present invention.

[0037] Furthermore, the use of terms such as "first," "second," and "third" in terminology is merely for distinguishing between identical or similar components and should not be interpreted as emphasizing or implying the relative importance of a particular component.

[0038] Furthermore, in the description of the embodiments of the present invention, "several", "more than", and "a number of" represent at least two. The number can be any number, such as 2, 3, 4, 5, 6, 7, 8, or 9, and can even exceed nine.

[0039] Furthermore, in the description of the technical solution of this invention, unless otherwise explicitly specified / limited / restricted, the terms "set up," "install," "connect," "link," "provided with," "laid out," and "arranged" should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to common connection methods in the art, such as welding, riveting, bolting, and threaded connections. Such connections can be mechanical, electrical, or communication connections; they can be direct connections or indirect connections through an intermediate medium; and they can refer to the internal communication between two components.

[0040] Example 1 This embodiment provides a heat dissipation device 200 for a high power density device. See also... Figure 1 The heat dissipation device 200 includes a heat dissipation base surface 210, a plurality of heat dissipation fins 220, and a thermally conductive layer 230. The heat dissipation fins 220 and the thermally conductive layer 230 are connected to both sides of the heat dissipation base surface 210. A high-power-density device is connected to the side of the thermally conductive layer 230 away from the heat dissipation base surface 230. The contact area between the thermally conductive layer 230 and the high-power-density device is smaller than the contact area between the thermally conductive layer 230 and the heat dissipation base surface 210.

[0041] Preferably, the heat dissipation power density of the high power density device is 3.7~423w / cm2.

[0042] Preferably, the heat dissipation device 200 further includes a mounting housing 240. The mounting housing 240 is used to mount high-power-density devices to the heat dissipation device 200, and the mounting housing 240 can also be used to dissipate heat from the high-power-density devices. The mounting housing 240 enables the high-power-density devices to fit tightly against the thermally conductive layer 230.

[0043] Preferably, the thermal conductive layer 230 is made of at least one of graphene, graphite, copper, silver, and gold.

[0044] In this embodiment, a heat-conducting layer 230 extending along the surface of the high-power-density device is provided between the heat dissipation base surface 210 and the high-power-density device. This allows the heat generated by the high-power-density device to be conducted not only along the direction perpendicular to the contact surface between the heat dissipation device 200 and the high-power-density device, but also along the heat-conducting layer 230 to the surrounding area of ​​the high-power-density device. This enables the heat generated by the high-power-density device during operation to be conducted in two directions: parallel to and perpendicular to the contact surface between the heat dissipation device 200 and the high-power-density device. Compared to traditional heat sinks or radiators, the heat dissipation effect of the heat dissipation device 200 provided in this embodiment is greatly enhanced, increasing the upper limit of the heat dissipation power density for high-power devices such as lasers, LEDs (light-emitting diodes), and TR components when using only heat sinks or radiators, and reducing the cost of using high-power-density devices.

[0045] Example 2 This embodiment provides a heat dissipation method for high power density devices, including heat dissipation using the heat dissipation device 200 provided in Embodiment 1.

[0046] Preferably, when dissipating heat from a high-power-density device, one side of the thermally conductive layer 230 is connected to the heat dissipation base 230, and the side of the thermally conductive layer 230 away from the heat dissipation base 230 is connected to the high-power-density device. Furthermore, the contact area between the thermally conductive layer 230 and the high-power-density device is smaller than the contact area between the thermally conductive layer 230 and the heat dissipation base 210.

[0047] Example 3 This embodiment is a specific application of Embodiments 1 and 2. The heat dissipation device 200 provided in Embodiment 1 and the heat dissipation method provided in Embodiment 2 can be applied to high-power devices such as high-power-density lasers, LEDs (light-emitting diodes), and TR components.

[0048] This embodiment provides a high-power LED light source. Preferably, the high-power LED light source provided in this embodiment utilizes the heat dissipation device 200 provided in Embodiment 1 and the heat dissipation method provided in Embodiment 2.

[0049] See Figure 2 A high-power LED light source, including an LED chip 100 and a heat dissipation device 200.

[0050] The heat dissipation device 200 includes a heat dissipation base surface 210, a plurality of heat dissipation fins 220, and a thermally conductive layer 230. The heat dissipation fins 220 and the thermally conductive layer 230 are connected to both sides of the heat dissipation base surface 210. An LED chip 100 is connected to the side of the thermally conductive layer 230 away from the heat dissipation base surface 210. The LED chip 100 is connected to the middle of the thermally conductive layer 230. Preferably, the size of the thermally conductive layer 230 is larger than the size of the LED chip 100, and is used to conduct the heat generated by the LED chip 100 when emitting light along the extension direction of the thermally conductive layer 230. Preferably, the material of the thermally conductive layer 230 includes at least one of graphene, graphite, copper, silver, and gold. Preferably, the thickness of the thermally conductive layer 230 is less than the length and width of the thermally conductive layer 230, so that the thermal conductivity of the thermally conductive layer 230 in its extension direction is higher than that in its extension direction. The heat dissipation device 200 also includes a mounting housing 240. The mounting housing 240 is used to mount the LED chip 100 to the heat sink 200, and also serves to dissipate heat from the high-power LED chip 100. The mounting housing 240 is connected to the heat sink bottom surface 210 and clamps the LED chip 100 and the thermally conductive layer 230. Preferably, the LED chip 100 is embedded in the bottom of the mounting housing 240, which is slightly lower than the top surface of the light source by 0.01~1cm. The heat sink bottom surface 210 and several heat sink fins 220 are located above the mounting housing 240 and the LED chip 100. After installation, the mounting housing 240 is in close contact with the LED chip 100 and the thermally conductive layer 230. Preferably, the mounting housing 240 can be made of metal or other materials with good thermal conductivity.

[0051] See Figure 3 The LED chip 100 includes: a substrate 110, an encapsulating layer 130, an LED bead 120, and a gold wire 140. The LED bead 120 is disposed on the substrate 110, the gold wire 140 is used for electrical connection of the LED bead 120, and the encapsulating layer 130 encapsulates the LED bead 120 and the gold wire 140 on the substrate 110.

[0052] In environments using high-power lighting, lighting equipment is often large and heavy to provide high-intensity, wide-area illumination, placing high demands on installation space and equipment load-bearing capacity. LED lighting, compared to traditional lighting methods, offers advantages such as portability and energy efficiency, making it an emerging emergency lighting solution. However, when using LEDs to achieve high-power lighting, the heat dissipation requirements of the LED chip 100 are limited. Conventional techniques often use LED chips 100 with more LED beads 120, or multiple LED chips 100, to increase the luminous power of the LED light source in order to achieve higher intensity and wider-area illumination. This inevitably leads to an increase in the size of the LED light source, resulting in increased weight and volume, and similarly, increased demands on installation space and equipment load-bearing capacity.

[0053] By applying the heat dissipation device 200 provided in Embodiment 1 and the heat dissipation method provided in Embodiment 2, the heat dissipation problem caused by the dense arrangement of LED beads 120 on the LED chip 100 is solved. This allows for the arrangement of as many LED beads 120 as possible on a substrate 110 with limited size, thereby increasing the luminous power of the LED chip 100 without increasing its size. This facilitates the miniaturization and weight reduction of high-power LED light sources and makes them easier to deploy on equipment with limited installation space and load-bearing capacity. Similarly, by applying the heat dissipation device 200 provided in Embodiment 1 and the heat dissipation method provided in Embodiment 2, the heat dissipation problem caused by high power density in high-power devices such as lasers and TR components is solved, facilitating the miniaturization and weight reduction of high-power devices such as lasers and TR components and making them easier to deploy on equipment with limited installation space and load-bearing capacity.

[0054] Example 4 This embodiment provides a high-power LED chip 100, and the LED chip 100 provided in this embodiment can be applied in the high-power LED light source involved in Embodiment 3.

[0055] See Figure 3 The LED chip 100 includes: a substrate 110, an encapsulating layer 130, an LED bead 120, and a gold wire 140. The LED bead 120 is disposed on the substrate 110, the gold wire 140 is used for electrical connection of the LED bead 120, and the encapsulating layer 130 encapsulates the LED bead 120 and the gold wire 140 on the substrate 110.

[0056] Preferably, in this embodiment, a plurality of LED beads 120 are mounted on one side of a substrate 110 via an encapsulating adhesive layer 130 on the high-power LED chip 100. The arrangement of the plurality of LED beads 120 on the substrate 110 is as follows: at least two LED beads 120 are connected in series to form a primary lamp group; at least two primary lamp groups are connected in parallel to form a secondary lamp group; and the plurality of LED beads 120 are arranged on the substrate 110 by connecting the ends of each secondary lamp group. The sum of the voltage differences between two primary lamp groups is less than the maximum isolation voltage between two adjacent LED beads 120.

[0057] Preferably, the heat dissipation device 200 is connected to the surface of the substrate 110 away from the LED bead 120. Preferably, the substrate 110 is connected to the middle of the thermally conductive layer 230.

[0058] This embodiment first connects at least two LED beads 120 in series to form a primary lamp group; then connects at least two primary lamp groups in parallel to form a secondary lamp group; and then arranges a number of LED beads 120 on a substrate 110 with limited size by connecting the end of each secondary lamp group. When arranging the LED beads 120 on the substrate 110, the sum of the voltage differences between two primary lamp groups is less than the maximum isolation voltage between two adjacent LED beads 120. This allows as many LED beads 120 as possible to be arranged on the substrate 110 with limited size, thereby increasing the luminous power of the LED chip 100 without increasing the size of the LED chip 100. This is beneficial for miniaturizing and lightening high-power LED light sources and for easy deployment on equipment with limited installation space and load-bearing capacity.

[0059] The high-power LED chip 100 provided in this embodiment increases the power density of the LED chip 100 by densely arranging the LED beads 120. This raises the question of how to dissipate heat during the operation of the LED chip 100 to ensure that the LED chip 100 is in the best operating state. This problem is solved by applying the heat dissipation device 200 provided in embodiment 1 and the heat dissipation method provided in embodiment 2.

[0060] Example 5 This embodiment is a further improvement on embodiment 4, and the repeated content will not be described again. In this embodiment, the operating voltage of the LED chip 100 is 300~3000V. Preferably, the heat dissipation power density of the LED beads 120 after being arranged on the substrate 110 is 3.7~423w / cm³. 2 The heat dissipation power density of the substrate 110 after arranging the LED beads 120 is 3.7~423w / cm³. 2 The preferred value is 3.7~44.6w / cm. 2 Or 160~423w / cm 2 Heat generation power density: power of the heat source / area of ​​the heat source, that is, the heat generation power per unit area when the device is working. Preferably, the power of the LED chip 100 is 50~1000W, more preferably, 80~100W.

[0061] When LED chip 100 emits light, it generates a lot of heat. If it cannot be dissipated in time, it will reduce the lifespan of LED chip 100. In severe cases, it may even cause the LED to catch fire due to overheating.

[0062] Most existing LED heat dissipation methods involve placing a semiconductor heat sink on the back of the LED chip 100 (the side surface without LED beads 120). However, the semiconductor heat sink mainly conducts heat in a direction perpendicular to the surface of the LED chip 100, resulting in the area of ​​the semiconductor heat sink facing the LED chip 100 having higher heat than other areas. Even if the area of ​​the semiconductor heat sink is larger than the area of ​​the LED chip 100, the area where the semiconductor heat sink actually performs heat dissipation is still the area facing the LED chip 100.

[0063] The LED chip 100 provided in this embodiment has high power and small size. When it emits light, the heat island effect is more obvious. Existing semiconductor heat sinks are difficult to effectively dissipate heat from the LED chip 100 provided in this embodiment.

[0064] Preferably, the heat dissipation device 200 is connected to the surface of the substrate 110 away from the LED bead 120. The heat dissipation device 200 includes a heat dissipation bottom surface 210, a plurality of heat dissipation fins 220, and a thermally conductive layer 230. One side of the thermally conductive layer 230 is connected to the heat dissipation bottom surface 210, and the side away from the heat dissipation bottom surface 210 is connected to the substrate 110. The substrate 110 is connected to the middle or end of the thermally conductive layer 230. Preferably, the substrate 110 is disposed in the middle of the thermally conductive layer 230. The contact area between the thermally conductive layer 230 and the substrate 110 is smaller than the contact area between the thermally conductive layer 230 and the substrate 110. When the thermally conductive layer 230 is connected to the substrate 110, the thermally conductive layer 230 covers the substrate 110.

[0065] Preferably, the size of the heat-conducting layer 230 is larger than the size of the substrate 110, enabling it to conduct heat generated when the LED chip 100 emits light along the extension direction of the heat-conducting layer 230. The area of ​​the heat-conducting layer 230 is larger than that of the substrate 110, and is 1.1 to 5 times the area of ​​the substrate 110. The heat-conducting layer 230 may be constructed using graphene, and the thickness of the heat-conducting layer 230 is less than its length and width, resulting in a higher horizontal heat conduction efficiency than a vertical heat conduction efficiency. Preferably, the material used to fabricate the heat-conducting layer 230 includes at least one of graphene, graphite, copper, silver, and gold.

[0066] Preferably, when one primary lamp group in a secondary lamp group is disconnected, the other primary lamp groups in that secondary lamp group can withstand the increased current; in other words, when a primary lamp group belonging to the same secondary lamp group is disconnected, its current is distributed to the other primary lamp groups and will not exceed the upper limit of the working current of a single lamp bead.

[0067] Preferably, the LED chip 120 has the following dimensions: length × width 559±38μm × 889±38μm, and thickness 150±15μm. Preferably, the photoelectric characteristics of the LED chip 120 at 22℃ are shown in the table below:

[0068] Preferably, the LED beads 120 in the LED chip 100 are arranged in a long string design, that is, the number of primary light groups is much greater than the number of secondary light groups.

[0069] Preferably, the number of primary light groups can be ten times, tens of times, or even hundreds of times more than the number of secondary light groups.

[0070] Preferably, the number of LED beads 120 connected in series in the primary light group can be dozens or even hundreds.

[0071] Preferably, the LED chip 100 provided in this embodiment can adopt a high-voltage driving scheme with an operating voltage of 300~3000V. Compared with the existing low-voltage driving scheme with a driving voltage of less than 100V, the current on the LED chip 100 circuit is smaller in the high-voltage driving scheme under the same power, which can significantly reduce the heat dissipation of the circuit.

[0072] The LED chip 100 directly uses high voltage drive, with an operating voltage of 300~3000V. For applications that require long-distance DC power supply or have specific requirements on cable weight, there is no need to step down the high voltage DC power to the low voltage power supply required by the constant current driver chip through a step-down module, which reduces the weight of the end and improves energy efficiency.

[0073] In LED chip 100, the LED beads 120 are arranged in a long string design. Within the suitable operating voltage range of LED chip 100, the operating voltage range of the entire string of LED beads 120 is widened, and the power of the light source can be directly adjusted by adjusting the input voltage. This can replace the traditional PWM dimming method and simplify the complexity of the peripheral circuit design of the lamp.

[0074] In LED chip 100, the LED beads 120 are arranged and connected in a long string design. Under the same power, the current of LED beads 120 is smaller than that of low voltage driving scheme. Whether gold wire connection is used or circuit is printed on the substrate, the wire diameter of gold wire 140 or the thickness and width of PCB printed circuit can be reduced, making the process simpler and the cost lower.

[0075] In terms of physical spatial layout, the LED chip 100 provided in this embodiment is configured with multiple secondary lamp groups to divide the voltage from VCC to GND into several segments, and control the voltage of each secondary lamp group within a reasonable range of 50-200V, which can effectively reduce the voltage between the secondary lamp groups and avoid the situation of wire breakdown.

[0076] The LED chip 100 provided in this embodiment is driven by a high voltage of 300V or more. Compared with the low voltage driving scheme, the parallel circuit path used to connect each string of chips has a small current, which effectively reduces line loss and improves the luminous efficacy of the entire LED chip 100.

[0077] The LED beads 120 are arranged in parallel within segments and in series across multiple segments, avoiding a single string throughout the entire length. This reduces the risk of overvoltage in the LED beads 120 due to uneven voltage distribution caused by fluctuations in individual LED beads 120 within a long string. Furthermore, if a single LED bead 120 in the LED chip 100 provided in this embodiment fails, the current can be shared by the chips in the other primary LED groups within the same secondary LED group, without affecting the LED beads 120 in their respective secondary LED groups.

[0078] In this embodiment, the parallel cables of each primary lamp group and the series lines of each secondary lamp group are placed outside the light-emitting surface area, making the process controllable.

[0079] The LED chip 100 provided in this embodiment adopts a high-voltage DC direct drive design, eliminating the need for end voltage regulator and constant current chip and current limiting circuit at the end of the lamp, thus reducing the requirements for electrical clearance and creepage distance of the lamp due to device reasons.

[0080] Example 6 This embodiment provides a method for manufacturing a high-power LED chip 100, used to manufacture the LED chip 100 involved in Embodiments 4 and 5. The method for manufacturing the high-power LED chip 100 provided in this embodiment may include: mounting a plurality of LED beads 120 on one side of a substrate 110 via an encapsulating adhesive layer 130. Preferably, the arrangement of the plurality of LED beads 120 on the substrate 110 is as follows: at least two LED beads 120 are connected in series to form a primary lamp group; at least two primary lamp groups are connected in parallel to form a secondary lamp group; and the plurality of LED beads 120 are arranged on the substrate 110 by connecting the ends of each secondary lamp group. Preferably, the sum of the voltage differences between two primary lamp groups is less than the maximum isolation voltage between two adjacent LED beads 120. Preferably, the maximum isolation voltage between two adjacent LED beads 120 can be adjusted by changing the thickness of the encapsulating adhesive layer 130, the spacing between two adjacent LED beads 120, and the material formulation of the encapsulating adhesive layer 130.

[0081] Example 7 This embodiment provides a high-power LED light source, including an LED chip 100 and a heat dissipation device 200. See also... Figure 1 , Figure 2 and Figure 3 Preferably, the LED chip 100 involved in this embodiment can be the LED chip 100 provided in Embodiments 4 and 5.

[0082] See Figure 3 The LED chip 100 includes a substrate 110 and a plurality of LED beads 120, which are arranged on one side surface of the substrate 110 by an encapsulating adhesive layer 130. Preferably, the arrangement of the plurality of LED beads 120 on the substrate 110 is as follows: at least two LED beads 120 are connected in series to form a primary lamp group; at least two primary lamp groups are connected in parallel to form a secondary lamp group; and the plurality of LED beads 120 are arranged on the substrate 110 by connecting the ends of each secondary lamp group. Preferably, the sum of the voltage differences between two primary lamp groups is less than the maximum isolation voltage between two adjacent LED beads 120.

[0083] Preferably, the operating voltage of the LED chip 100 is 300~3000V. The heat dissipation power density of the LED chip 100 is 3.7~423W / cm³. 2 The power of LED chip 100 is 50~1000W.

[0084] See Figure 2 The heat dissipation device 200 includes a heat dissipation base surface 210, a plurality of heat dissipation fins 220, and a thermally conductive layer 230. The heat dissipation fins 220 and the thermally conductive layer 230 are disposed on both sides of the heat dissipation base surface 210. One side of the thermally conductive layer 230 is connected to the heat dissipation base surface 210, and the side of the thermally conductive layer 230 away from the heat dissipation base surface 210 is connected to a substrate 110, with the substrate 110 disposed in the middle of the thermally conductive layer 230. Preferably, the size of the thermally conductive layer 230 is larger than the size of the substrate 110, for conducting the heat generated when the LED chip 100 emits light along the extension direction of the thermally conductive layer 230. Preferably, the thermally conductive layer 230 is constructed of graphene, and the thickness of the thermally conductive layer 230 is less than its length and width, such that the thermal conductivity of the thermally conductive layer 230 in its extension direction is higher than that in its extension direction. The heat dissipation device 200 also includes a mounting housing 240. The mounting housing 240 is used to mount the substrate 110 to the heat dissipation device 200, and the mounting housing 240 can also be used to dissipate heat from the high-power LED chip 100. The mounting housing 240 is connected to the heat dissipation bottom surface 210 and clamps the substrate 110 and the thermally conductive layer 230. Preferably, the LED chip 100 is embedded in the bottom of the mounting housing 240, and the mounting housing 240 is slightly lower than the top surface of the light source by 0.01~1cm. The heat dissipation bottom surface 210 and several heat dissipation fins 220 are located above the mounting housing 230 and the LED chip 100. After installation, the mounting housing 230 is in close contact with the LED chip 100 and the thermally conductive layer 230. Preferably, the mounting housing 240 can be made of metal or other materials with good thermal conductivity.

[0085] Preferably, the heat-conducting layer 230 is a thin sheet, and its area is larger than that of the substrate 110 but smaller than that of the heat dissipation bottom surface 210. The thermal conductivity of the heat-conducting layer 230 is greater than that of the heat dissipation bottom surface 210. The heat generated when the LED chip 100 emits light can be conducted laterally within the heat-conducting layer 230, causing the temperature of the entire surface of the heat-conducting layer 230 in contact with the heat dissipation bottom surface 210 to rise, thereby improving the thermal conductivity efficiency.

[0086] Preferably, the high-power LED light source provided in this embodiment can have 1 to 6 LED chips 100 mounted on the heat dissipation device 200. The total input power of the high-power LED light source is >100W.

[0087] Preferably, the high-power LED light source provided in this embodiment is subjected to lighting performance testing. Under the conditions that the high-power LED light source is 50m away from the lighting plane, and has a power of 800W, a luminous efficacy of 225lm / W, and a luminous flux of 180,000lm, the maximum distance from the point on the lighting plane with an illuminance measurement value ≥2lx to the projection point of the high-power LED light source on the lighting plane is 65m. Under the condition that the high-power LED light source is 50m away from the lighting plane, the area on the lighting plane with an illuminance measurement value ≥2lx is 13267m². 2 .

[0088] The lighting performance (illuminance lx) of high-power LED light sources is shown in the table below:

[0089] In the table: height is the distance between the high-power LED light source and the illumination plane; distance is the distance between the detection point on the illumination plane and the projection point of the high-power LED light source; the high-power LED light source has a power of 800W, a luminous efficacy of 225lm / W, and a luminous flux of 180000lm.

[0090] Example 8 This embodiment provides a method for manufacturing a high-power LED light source, used to manufacture the high-power LED light source in Embodiment 7. The method for manufacturing a high-power LED light source provided in this embodiment may include: arranging a plurality of LED beads 120 on one side of a substrate 110 and isolating and encapsulating them with an encapsulating adhesive layer 130; and connecting a heat-conducting layer 230 to the surface of the substrate 110 away from the LED beads 120.

[0091] Preferably, the arrangement of the LED beads 120 on the substrate 110 is as follows: at least two LED beads 120 are connected in series to form a primary lamp group; at least two primary lamp groups are connected in parallel to form a secondary lamp group; each secondary lamp group arranges the LED beads 120 on the substrate 110 by connecting them end-to-end; wherein the sum of the voltage differences between two primary lamp groups is less than the maximum isolation voltage between two adjacent LED beads 120; the maximum isolation voltage is determined by adjusting the thickness of the encapsulating adhesive layer 130 and / or the spacing between two adjacent LED beads 120. Preferably, the size of the thermal conductive layer 230 is larger than the size of the substrate 110, and the substrate 110 is disposed in the middle of the thermal conductive layer 230. When the thermal conductive layer 230 is connected to the substrate 110, the thermal conductive layer 230 covers the substrate 110. Preferably, the manufacturing method of the high-power LED light source provided in this embodiment further includes: connecting a heat dissipation bottom surface 210 to the side of the thermal conductive layer 230 that is not connected to the substrate 110. Several heat dissipation fins 220 are provided on the side of the heat dissipation bottom surface 210 that is not connected to the heat conduction layer 230. A mounting housing 240 is provided on the side of the heat conduction layer 230 that is connected to the substrate 110. The mounting housing 240 is connected to the heat dissipation bottom surface 210 and clamps the substrate 110 and the heat conduction layer 230.

[0092] Example 9 This embodiment provides a high-power LED lighting system, including: an LED light source, a driver power supply, a sensor, and a processor. Preferably, the LED light source involved in this embodiment can be the high-power LED light source involved in Embodiment 3 or Embodiment 7.

[0093] An LED light source is used for illumination. Preferably, the LED light source includes an LED chip 100 and a heat dissipation device 200. The LED chip 100 includes a substrate 110 and a plurality of LED beads 120, which are mounted on one side of the substrate 110 by an encapsulating adhesive layer 130. Preferably, the plurality of LED beads 120 are arranged on the substrate 110 as follows: at least two LED beads 120 are connected in series to form a primary lamp group; at least two primary lamp groups are connected in parallel to form a secondary lamp group; and each secondary lamp group is connected in series end-to-end, thereby arranging the plurality of LED beads 120 on the substrate 110. Preferably, the sum of the voltage differences between two primary lamp groups is less than the maximum isolation voltage between two adjacent LED beads 120. A driving power supply is used to supply power to the LED light source. A sensor is used to collect the control parameters of the LED light source; wherein the control parameters are one or a combination of voltage, current, light source temperature, and ambient temperature. A processor acquires the control parameters and adjusts the output voltage of the driving power supply according to the control parameters, thereby adjusting the current in the internal circuit of the LED light source.

[0094] The heat dissipation device 200 includes: a mounting housing 240, a heat dissipation base 210, a plurality of heat dissipation fins 220, and a thermally conductive layer 230. The heat dissipation fins 220 and the thermally conductive layer 230 are connected to both sides of the heat dissipation base 210. The side of the thermally conductive layer 230 away from the heat dissipation base 210 is connected to a substrate 110. The substrate 110 is connected to the middle of the thermally conductive layer 230. The size of the thermally conductive layer 230 is larger than the size of the substrate 110, and it is used to conduct the heat generated when the LED light source emits light along the extension direction of the thermally conductive layer 230. The mounting housing 240 is connected to the heat dissipation base 210 and clamps the substrate 110 and the thermally conductive layer 230.

[0095] Preferably, the sensor includes a current sensor disposed on each primary lamp group for detecting the current of the primary lamp group. The processor determines the on / off status of each primary lamp group through the current sensor and adjusts the output voltage of the drive power supply according to the on / off status of each primary lamp group.

[0096] Preferably, the sensor further includes a temperature sensor for detecting at least the temperature of the LED light source. The processor can determine a driving scheme based on the detection data from the current sensor and the temperature sensor, and adjust the output voltage of the drive power supply according to the driving scheme.

[0097] Preferably, the driving scheme includes three driving schemes.

[0098] First driving scheme: The processor adjusts the output voltage and adjustment range of the driving power supply through upper and lower limit control. Preferably, the processor presets several limits: second lower control limit < first lower control limit < control center line < first upper control limit < second upper control limit. The processor determines the output voltage and adjustment range of the driving power supply by vertically comparing the detected current or temperature value of the LED light source with each limit.

[0099] The second driving scheme: The processor detects the loop current and light source temperature of the LED light source through sensors, calculates the real-time slope of the loop current and light source temperature change curves, and sends a voltage adjustment command to the driving power supply to control the rate of change of the loop current and light source temperature.

[0100] The third driving scheme: The processor detects the loop current, light source temperature, and heat sink temperature of the LED light source through sensors, and controls the output of the driving power supply based on the deviation between the detected value and the preset value, so that the detected value is close to the preset value.

[0101] See Figure 4 Preferably, the high-power LED lighting system includes: an LED light source; a driver power supply for supplying power to the LED light source; a processor; several sensors; and a digital-to-analog converter. The driver power supply is a programmable DC power supply.

[0102] The drive power supply and the digital-to-analog converter are respectively connected to the processor signal. The sensor includes a current sensor disposed at the current input port of the LED chip 100. Preferably, if multiple LED chips 100 are connected in parallel, a current sensor is disposed at the current input port of each LED chip 100.

[0103] The sensors also include: a first temperature sensor for detecting ambient temperature; a second temperature sensor for detecting the temperature of LED chip 100; and a third temperature sensor for detecting the temperature of heat dissipation device 200. The sensors are connected to the processor via a digital-to-analog converter.

[0104] Preferably, the current sensor collects the current data of the LED chip 100 and transmits it to the processor via a digital-to-analog converter.

[0105] Preferably, the first temperature sensor, the second temperature sensor, and the third temperature sensor also transmit the collected temperature data to the processor via a digital-to-analog converter.

[0106] The processor adjusts the loop current of LED chip 100 based on the collected current and temperature data.

[0107] Preferably, the processor directly sends a voltage regulation command to the programmable power supply based on the collected current and temperature data, adjusting the output voltage of the drive power supply, thereby regulating the current of the LED chip 100 related to the input value.

[0108] Sensor data processing and programmable power regulation can be handled by two different processors.

[0109] See Figure 5 The processor may include a first processor and a second processor. Preferably, the first processor is connected to a digital-to-analog converter for processing data acquired by each sensor. The second processor is connected to a drive power supply for adjusting the output voltage of the drive power supply.

[0110] Preferably, the signal connection between the first processor and the second processor can be a direct signal connection between the first processor and the second processor, or a signal connection between the first processor and the second processor can be achieved through a relay communication device.

[0111] Preferably, the first processor can transmit the current and temperature data collected by the sensor to the second processor. The second processor then directly sends a voltage regulation command to the programmable power supply based on the collected current and temperature data, adjusting the output voltage of the drive power supply, thereby regulating the current of the LED chip 100 related to the input value.

[0112] Preferably, the feedback adjustment performed by the processor based on the collected current and temperature data can be achieved using a control chart upper and lower limit control method, as follows: S11. Plot the mean-range control chart: Start the drive power supply, connect the loop current data and light source temperature data to the recorder, turn on the LED light source loop, adjust the output voltage of the drive power supply so that the loop voltage of each LED chip 100 in the LED light source reaches the rated value. When the light source temperature is basically stable, start recording at a sampling frequency of 1Hz for 1-2 minutes. Power off and shut down the system. Repeat the above operation 4-5 times and calculate the average value of the sample (X). bar ), range (R), and standard deviation (σ).

[0113] S12. Draw the mean control chart, range R control chart, and mean-range control chart respectively, and determine the corresponding center line, upper control limit, and lower control line.

[0114] The formula for calculating the mean control chart is as follows:

[0115]

[0116]

[0117] The formula for calculating the range R control chart is as follows:

[0118]

[0119]

[0120] The formula for calculating the mean-range control chart is as follows:

[0121]

[0122]

[0123] S13: Input the CL, UCL, and LCL of the drawn mean control chart, range R control chart, and mean-range control chart into the processor respectively, and start the device. The processor controls the drive power supply to automatically adjust the output voltage and run according to the control chart, recording loop current data and light source temperature data at a sampling frequency of 1Hz for 30-60 minutes continuously. Analyze the data, examine the distribution of the recorded data on the control chart, and calculate the population standard deviation (σt).

[0124] Specifically, to directly apply the control graph to power supply control, the range R control graph is corrected as follows:

[0125]

[0126]

[0127] Formula for calculating population standard deviation:

[0128] S14: Optimize the control chart. Based on the data analysis, move the mean line CL and redraw the UCL and LCL. Check if the area can cover 80-90% of the points. If it can, write the new control chart to the processor, start the device, and the processor controls the drive power supply to automatically adjust the output voltage and run according to the control chart. Record the current data and light source temperature data values ​​at a sampling frequency of 1Hz for 30-60 minutes. Analyze the data and examine the distribution of the recorded data on the control chart. Repeat the above steps until the control chart can cover more than 95% of the points.

[0129] Average value of samples taken over 30-60 minutes.

[0130] ,

[0131] Preferably, the processor adjusts the output value of the drive power supply according to the control diagram. When the current or temperature is lower than the lower control limit, the voltage is adjusted by a certain step size. When the current or temperature is higher than the upper control limit, the voltage is lowered by a certain step size, so that the LED return current is between the lower control limit and the upper control limit.

[0132] Preferably, the control chart is configured with several current limits, including a first lower control limit, a first upper control limit, a second lower control limit, a second upper control limit, and a control center line; and numerically, the second lower control limit < the first lower control limit < the control center line < the first upper control limit < the second upper control limit.

[0133] When the current value exceeds the second control limit, the processor controls and adjusts the output value of the drive power supply to cut off the power supply to the corresponding LED chip 100.

[0134] When the current value is between the first control upper limit and the second control upper limit, the processor controls the output value of the drive power supply to reduce the power supply current of the corresponding LED chip 100.

[0135] When the current value is between the first control upper limit and the first control lower limit, the processor does not adjust the output value of the drive power supply.

[0136] When the current value is between the first control lower limit and the second control lower limit, the processor controls the output value of the drive power supply to increase the power supply current of the corresponding LED chip 100.

[0137] When the current value is lower than the second control lower limit, the processor cuts off the power supply to the corresponding LED chip 100 and issues a fault alarm.

[0138] Preferably, the feedback adjustment performed by the processor based on the collected current and temperature data can also be performed using a slope control method.

[0139] The processor detects the loop current and light source temperature of the LED chip 100 through sensors, calculates the real-time slope of the loop current and light source temperature change curves, and sends voltage adjustment commands to the driver power supply to control the rate of change of variables (loop current and light source temperature), which can effectively improve the stability and safety of the lighting system.

[0140] Preferably, the feedback adjustment performed by the processor based on the collected current and temperature data can also be achieved using PID control.

[0141] The processor detects the loop current of the LED chip 100, the temperature of the light source, and the temperature of the heat dissipation device 200 through sensors, and calculates the control deviation between the sensor setpoint and the detected value. Then, the deviation is linearly composed of proportional, mechanical, and differential values ​​to form the voltage control variable of the driving power supply. The processor then controls the driving power supply according to the voltage control variable so that the lighting system can reach the set value.

[0142] Preferably, PID control is used for feedback regulation, which is especially suitable for LED lighting systems in constant current processes with large lag, large inertia and nonlinear conditions. The system can reasonably set P (proportional), I (integral), and D (derivative) control according to the light source model, heat sink model, heat dissipation method and even environmental changes, to achieve fuzzy PID algorithm, automatically calculate to quickly reach the optimal control state, so that the lighting system can operate stably and efficiently.

[0143] Preferably, the processor uses the loop current of the LED chip 100, the temperature of the light source, and the temperature of the heat dissipation device 200 as a comprehensive feedback signal, sets different weights, and calculates the input amount for adjusting the output of the drive power supply, resulting in a more accurate control effect.

[0144] Preferably, the processor's PID control parameter tuning process, and the automatic learning and determination of the optimal P, I, and D values ​​for different types of LED light sources and applications, are as follows: S21: Input the rated voltage, rated current, lower limit of specified voltage, upper limit of specified voltage, upper limit of specified current, lower limit of specified current, and upper limit of light source temperature of the LED light source.

[0145] S22: Set both the integral time I and the derivative time D of the PID controller in the processor to "0", and retain only the proportional gain P.

[0146] S23: Set an initial value for P, such as 0.1, turn on the power supply of the lighting system, and detect indicators such as the loop current of LED chip 100, the temperature of the light source, and the temperature of the heat dissipation device 200. Gradually increase the value of P until the detected values ​​of the loop current of LED chip 100, the temperature of the light source, and the temperature of the heat dissipation device 200 show sequential oscillation.

[0147] S24: Record the proportional gain at the time of vibration as the critical gain Kc, and the oscillation period as the critical period Tc; the preferred scheme is: plot the response curves for the light source current and the light source temperature respectively, draw the tangent at the inflection point of the S-shaped curve, and make it intersect the vertical axis (I or T) and the horizontal axis (t) respectively, and calculate the delay time τ and the inertial time constant T.

[0148] S25 calculates the values ​​of P, I, and D according to the empirical formula of Ziegler-Nichols, as follows: P=0.5*Kc I = Tc / 1.2 D = Tc * 0.5 Preferably, the PID control parameter tuning process of the processor, and the automatic learning and determination of the optimal P, I, and D values ​​for different types of LED light sources and applications, can also be as follows: S31: Input the rated voltage, rated current, lower limit of specified voltage, upper limit of specified voltage, upper limit of specified current, lower limit of specified current, and upper limit of light source temperature of the LED light source.

[0149] S32: Set both the integral time I and derivative time D of the PID controller in the processor to "0", and retain only the proportional gain P.

[0150] S33: Set an initial value for P, for example, 0.1. Turn on the lighting system power and check indicators such as LED circuit current and light source temperature. Gradually increase the value of P until the LED circuit current and light source temperature readings show sequential oscillations. S34: Calculate the response curves of the loop current and light source temperature of LED chip 100 respectively, draw tangents through the inflection points of the S-shaped curves, and intersect them with the vertical axis (I or T) and horizontal axis (t) respectively, to obtain the delay time τ and the inertial time constant T.

[0151] Its transmission function is: G(s)=K*e^(-τs) / (Ts+1) S35: Calculate the values ​​of P, I, and D according to the following formula: P=1.2*(T / τ) I=2τ D=0.5 Preferably, the feedback adjustment performed by the processor based on the collected current and temperature data can also be: using Kh as the adjustment target, and employing upper and lower limit control charts, slope control, or PDI control methods for regulation.

[0152] The processor calculates the thermal power (W of heat) of the light source by measuring the temperature of the light source and the temperature of the heat dissipation device 200 through sensors. The ratio of thermal power to input power is used as the basis for adjusting the output voltage of the drive power supply, which can better utilize the performance of the light source.

[0153] The heat conducted from the light source to the heat sink is calculated using the following formula: ; In the formula: Q C For heat conduction; K is the thermal coefficient of the heat-conducting medium between the light source and the heat sink; A is the area of ​​the conduction surface between the light source and the heat sink; ΔT is the temperature difference between the light source and the heat sink, ΔT=Ts-Tr, where Ts is the temperature of the light source and Tr is the temperature of the heat sink; ΔL is the heat dissipation distance between the light source and the heat sink, and the thickness of the heat-conducting medium.

[0154] The heat radiated by the light source to the environment is calculated using the following formula:

[0155] In the formula: QSR is the heat radiated from the light source to the environment; ε is the emissivity; σ is the Stepan-Boltzmann constant, approximately 5.67 × 10⁸ W (m² * K⁴); A is the surface area of ​​the radiator, i.e., the surface area of ​​the light source; T is the temperature of the radiator, i.e., the temperature of the light source; T₀ is the ambient temperature.

[0156] The total heat output (Qh) of the light source is calculated using the following formula: Qh = Qc + QSR Calculate the thermal power (Wh) using the following formula: Wh=Qh / t Calculate the light source input power (Win) using the following formula. Win=U×I U is the input voltage, and I is the input current.

[0157] The thermal power consumption coefficient (Kh) of the light source is calculated using the following formula. .

[0158] Example 10 This embodiment provides a high-power heat dissipation device 200. See also... Figure 1The heat dissipation device 200 includes: a heat dissipation base surface 210, a plurality of heat dissipation fins 220, and a heat-conducting layer 230. The heat dissipation fins 220 and the heat-conducting layer 230 are connected to both sides of the heat dissipation base surface 210. A high-power heat source is connected to the side of the heat-conducting layer 230 away from the heat dissipation base surface 210. Preferably, the heat dissipation power density of the high-power heat source is 3.7~423w / cm³. 2 Preferably, the high-power heat source can be the high-power LED chip 100 involved in this invention, or it can be other heat sources with a heat generation power density of 3.7~423w / cm³. 2 High-power devices, such as lasers, semiconductor chips, etc.

[0159] Example 11 This embodiment provides a high-power laser source, and the high-power laser source provided in this embodiment is equipped with the heat dissipation device 200 involved in Embodiments 1 and 2 for heat dissipation. Preferably, the high-power laser source provided in this embodiment has a heat dissipation power density of 3.7~423w / cm³ during operation. 2 .

[0160] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A high-power LED light source, characterized in that, Includes LED chip (100) and heat dissipation device (200); The LED chip (100) includes a substrate (110) and a plurality of LED beads (120), and the plurality of LED beads (120) are mounted on one side of the substrate (110) by an encapsulating adhesive layer (130); The arrangement of the LED beads (120) on the substrate (110) is as follows: at least two LED beads (120) are connected in series to form a primary lamp group; at least two primary lamp groups are connected in parallel to form a secondary lamp group; and the LED beads (120) of each secondary lamp group are arranged on the substrate (110) by connecting the ends of each other. Among them, the sum of the voltage differences between the two primary lamp groups is less than the maximum isolation voltage of two adjacent LED beads (120); The heat dissipation device (200) includes a heat dissipation bottom surface (210), a plurality of heat dissipation fins (220) and a heat-conducting layer (230). The heat dissipation fins (220) and the heat-conducting layer (230) are connected to both sides of the heat dissipation bottom surface (210); The side of the thermally conductive layer (230) away from the heat dissipation bottom surface (210) is connected to the substrate (110); the substrate (110) is connected to the middle of the thermally conductive layer (230); The thermal conductive layer (230) is larger than the substrate (110) and is used to conduct the heat generated when the LED chip (100) emits light along the extension direction of the thermal conductive layer (230).

2. The high-power LED light source according to claim 1, characterized in that, The operating voltage of the LED chip (100) is 300~3000V.

3. A high-power LED light source according to claim 1, characterized in that, The heat dissipation power density of the LED chip (100) is 3.7~423w / cm³. 2 .

4. A high-power LED light source according to claim 1, characterized in that, The power of the LED chip (100) is 50~1000W.

5. A high-power LED light source according to claim 1, characterized in that, The thermal conductive layer (230) is made of at least one of graphene, graphite, copper, silver, and gold; and the thickness of the thermal conductive layer (230) is less than the length and width of the thermal conductive layer (230).

6. A high-power LED light source according to claim 1, characterized in that, The area of ​​the thermal conductive layer (230) in contact with the substrate (110) is smaller than the area of ​​the thermal conductive layer (230) in contact with the heat dissipation bottom surface (210).

7. A high-power LED light source according to claim 1, characterized in that, The heat dissipation device (200) also includes a mounting housing (240); The mounting housing (240) is used to mount the high power density device to the heat dissipation device (200) and to make the high power density device fit tightly against the heat-conducting layer (230), and the mounting housing (240) can also be used to dissipate heat from the high power density device.

8. A method for manufacturing a high-power LED light source, characterized in that, include: Several LED beads (120) are arranged on one side surface of the substrate (110) and isolated and encapsulated by an encapsulating adhesive layer (130); A heat-conducting layer (230) is connected to the surface of the substrate (110) away from the LED bead (120); and the size of the heat-conducting layer (230) is larger than the size of the substrate (110); the substrate (110) is connected to the middle of the heat-conducting layer (230); The arrangement of the LED beads (120) on the substrate (110) is as follows: at least two LED beads (120) are connected in series to form a primary lamp group; at least two primary lamp groups are connected in parallel to form a secondary lamp group; the LED beads (120) of each secondary lamp group are arranged on the substrate (110) by connecting them end to end; wherein the sum of the voltage differences between the two primary lamp groups is less than the maximum isolation voltage between two adjacent LED beads (120); the maximum isolation voltage is determined at least by adjusting the thickness of the encapsulating adhesive layer (130) and / or the spacing between two adjacent LED beads (120).

9. A method for manufacturing a high-power LED light source according to claim 8, characterized in that, A heat dissipation bottom surface (210) is connected to the side of the thermally conductive layer (230) away from the substrate (110). Several heat dissipation fins (220) are connected to the side of the heat dissipation bottom surface (210) away from the heat conduction layer (230). On the side of the heat-conducting layer (230) that connects to the substrate (110), a mounting housing (240) is provided; the mounting housing (240) is connected to the heat dissipation bottom surface (210) and clamps the substrate (110) and the heat-conducting layer (230).

10. A high-power LED lighting system, characterized in that, include: The high-power LED light source as described in any one of claims 1 to 7 is used for lighting; A driving power supply is used to supply power to the high-power LED light source; A sensor is used to collect the control parameters of the high-power LED light source; wherein the control parameters are one or a combination of voltage, current, light source temperature, and ambient temperature; The processor acquires the control parameters and adjusts the output voltage of the driving power supply according to the control parameters, thereby adjusting the current in the internal circuit of the high-power LED light source.

11. A high-power LED lighting system according to claim 10, characterized in that, The sensor includes a current sensor installed on each primary lamp group for detecting the current of the primary lamp group; The processor determines the on / off status of each primary lamp group through the current sensor, and adjusts the output voltage of the drive power supply according to the on / off status of each primary lamp group.

12. A high-power LED lighting system according to claim 11, characterized in that, The sensor also includes a temperature sensor, which is used to detect at least the temperature of the LED light source; The processor can determine a driving scheme based on the detection data from the current sensor and the temperature sensor, and adjust the output voltage of the driving power supply according to the driving scheme.

13. A high-power LED lighting system according to claim 12, characterized in that, The driving scheme includes: First driving scheme: The processor adjusts the output voltage value and adjustment range of the driving power supply through upper and lower limit control; wherein, the processor presets several limits: second control lower limit < first control lower limit < control center line < first control upper limit < second control upper limit; The processor determines the output voltage value and adjustment range of the driving power supply by detecting the current or temperature value of the LED light source and comparing the detected value with each boundary vertically. The second driving scheme: The processor detects the loop current and light source temperature of the LED light source through sensors, calculates the real-time slope of the loop current and light source temperature change curves, and sends a voltage adjustment command to the driving power supply to control the rate of change of the loop current and light source temperature. The third driving scheme: The processor detects the loop current, light source temperature, and heat sink temperature of the LED light source through sensors, and controls the output of the driving power supply based on the deviation between the detected value and the preset value, so that the detected value is close to the preset value.

Images