Feed apparatus for silicon carbide growth
By using a uniform feeding and lifting component in the silicon carbide growth feeder, the problem of powder inhomogeneity within the crucible was solved, ensuring uniform growth and high-quality production of silicon carbide single crystals.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIANGSU HI-PRINT TECH CO LTD
- Filing Date
- 2025-07-18
- Publication Date
- 2026-07-21
AI Technical Summary
In traditional silicon carbide single crystal manufacturing, the uneven growth rate caused by the non-uniformity of silicon carbide powder in the crucible leads to surface defects, affecting the quality of the ingot and the yield of the slices.
A feeding device for silicon carbide growth is adopted, including a uniform feeding component and a lifting component. The material is leveled by a vortex feeder, a smoothing frame and a stirring frame, and combined with vibration of a vibrating rod and clamping blocks to ensure the uniformity and density of the material in the crucible.
This method achieves uniform distribution and dense packing of silicon carbide powder in the crucible, reduces growth defects, and improves single crystal quality and slice yield.
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Figure CN121046936B_ABST