超级结半导体功率器件及其制造方法
By employing heavily doped substrates and conductive columnar structures in deep trench superjunction semiconductor power devices, combined with a bottom insulating dielectric layer, the problems of process precision and uniformity were solved, the stability of device breakdown voltage and dynamic performance was improved, and the mass production process window was optimized.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WUXI SHANGJIA SEMICON CO LTD
- Filing Date
- 2025-09-09
- Publication Date
- 2026-07-17
AI Technical Summary
Existing deep trench superjunction semiconductor power devices have extremely high requirements for process precision, uniformity, and stability, which limits the expansion of mass production scale and the uniformity and controllability of product performance.
A deep trench is filled with a heavily doped substrate of the first conductivity type and a doped monocrystalline silicon of the second conductivity type, combined with a bottom insulating dielectric layer to form an alternating columnar structure of conductivity types. The electric field strength at the bottom of the deep trench is maintained by a thick dielectric layer, thus optimizing the process window.
It improves the withstand voltage stability and dynamic performance stability of the device, optimizes the process window, enhances avalanche breakdown characteristics and surge performance, and ensures stable mass production of the device and expansion of production capacity of new equipment.
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Figure CN121078771B_ABST
Abstract
Citation Information
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