Method for feeding a trichlorosilane synthesis furnace, storage medium and control system

Abstract

The application provides a trichlorosilane synthesis furnace feeding method, a storage medium and a control system, relates to the technical field of polysilicon, and records data before discharging; hydrogen is filled to the outlet at the bottom of a silicon powder discharging tank, whether the outlet at the bottom of the silicon powder discharging tank is unobstructed is verified, if the outlet is blocked, the outlet is dredged by back-blowing hydrogen; hydrogen is filled to the feeding port of a trichlorosilane synthesis furnace, whether the feeding port of the trichlorosilane synthesis furnace is unobstructed is verified, if the feeding port is blocked, the feeding port is dredged by hydrogen blowing; silicon powder is fed to the trichlorosilane synthesis furnace, and the discharging quality of the silicon powder is realized without weighing measurement according to the discharging time and the pressure difference change amount of the silicon powder discharging tank before and after discharging. The control system based on the DeltaV platform comprises a storage medium in which a computer program is stored, and the computer program is executed to realize the above method. The application depends on few electrical equipment, can accurately control the input quantity and input rate of the silicon powder, and thus guarantees the purity of the product and improves the conversion rate of hydrogen chloride and the silicon powder.

Description

Technical Field

[0001] This invention relates to the field of polycrystalline silicon technology, and in particular to a feeding method, storage medium and control system for a trichlorosilane synthesis furnace. Background Technology

[0002] In the reaction control process of polycrystalline silicon trichlorosilane synthesis furnace, the feeding process of the synthesis furnace often requires the main controller or inspection personnel to control it based on their own experience or to use electrical equipment for auxiliary control.

[0003] Currently, the main methods for material feeding that utilize electrical equipment for auxiliary control are as follows:

[0004] 1. Using a screw propeller for automatic continuous feeding has the drawback of severe wear and high maintenance costs.

[0005] 2. The rotating feeding disc and gas distribution work together to feed materials. The disadvantages are: complex mechanical structure, high maintenance cost, easy clogging of the rotating feeding disc, and high power consumption during long-term high-frequency operation of the equipment.

[0006] 3. The silicon powder injection device and the gas splitting module work together to feed the silicon powder. The drawbacks are: the silicon powder injection device is prone to clogging and severe wear; the gas splitting module has uneven pressure distribution and is difficult to control precisely to control the furnace temperature.

[0007] When the feeding process of the synthesis furnace is controlled by the main operator or the inspector based on their own experience, it has the following defects:

[0008] 1. Uneven silicon powder distribution and low reaction efficiency: Manual feeding can easily cause silicon powder to accumulate in the furnace and cannot be evenly dispersed, thereby reducing the effective contact area between silicon powder and hydrogen chloride gas and reducing reaction efficiency; uneven distribution may also cause local overheating or incomplete reaction, increasing the generation of by-products (such as silicon tetrachloride) and affecting the conversion rate of trichlorosilane.

[0009] 2. Poor operational safety: Frequent operation of the equipment may introduce air or moisture. Trichlorosilane reacts violently with water to produce hydrogen chloride gas, which may cause corrosion or explosion. If the seal is not tight during manual operation, toxic gases (such as HCl) may leak, endangering personnel health.

[0010] 3. Prone to clogging: When manually feeding, silicon powder is prone to clumping or clogging in pipes and equipment, requiring frequent tapping and unblocking by personnel, which further increases the operational risk; clogging can also cause pressure fluctuations in the furnace, affecting the stability of the reaction, and even forcing the furnace to be shut down for maintenance.

[0011] 4. Difficulty in temperature control: Manual feeding makes it difficult to precisely control the silicon powder input rate, which may lead to sudden temperature changes inside the furnace. The synthesis of trichlorosilane needs to be maintained within a narrow range of 280-330℃, and temperature fluctuations will directly affect the purity and conversion rate of the product.

[0012] 5. Low level of automation and difficulty in scaling up: Reliance on manual operation limits the expansion of production scale and cannot meet the needs of continuous production.

[0013] In summary, the furnace feeding process, whether controlled by electrical equipment or by the main controller or inspector based on their experience, has some shortcomings and needs improvement. Summary of the Invention

[0014] In view of the above situation, the present invention provides a feeding method for a trichlorosilane synthesis furnace, which aims to solve at least one of the technical problems mentioned in the background art caused by the fact that the feeding process of existing synthesis furnaces often requires the main control personnel or inspection personnel to control based on their own experience or to use electrical equipment to assist in the control.

[0015] To achieve the above objectives, the present invention provides the following technical solution:

[0016] In a first aspect, the present invention provides a method for feeding a trichlorosilane synthesis furnace, comprising:

[0017] Step S1: Record the pressure difference of the trichlorosilane synthesis furnace bed and the pressure data in the silicon powder feeding tank before feeding.

[0018] Step S2: Backfill hydrogen gas into the outlet at the bottom of the silicon powder feeding tank to verify whether the outlet at the bottom of the silicon powder feeding tank is unobstructed. If it is blocked, clear it by backfilling hydrogen gas.

[0019] Step S3: Charge hydrogen into the feed inlet of the trichlorosilane synthesis furnace to verify whether the feed inlet of the trichlorosilane synthesis furnace is unobstructed. If it is blocked, purge it with hydrogen.

[0020] Step S4: Silicon powder is fed into the trichlorosilane synthesis furnace using the hydrogen gas from step S3. The mass of the silicon powder is measured without weighing based on the feeding time and the pressure difference change inside the silicon powder feeding tank before and after feeding.

[0021] Step S5: End the feeding process. The silicon powder feeding tank and the trichlorosilane synthesis furnace are restored to the process state in step S1.

[0022] In some embodiments of the present invention, the feeding method for a trichlorosilane synthesis furnace is applied to a trichlorosilane synthesis furnace feeding system, the trichlorosilane synthesis furnace feeding system comprising:

[0023] The trichlorosilane synthesis furnace has a feed inlet, which is equipped with a feed valve;

[0024] A silicon powder storage tank, the outlet at its bottom of which is connected to the inlet at the top of a silicon powder feeding tank;

[0025] The silicon powder feeding tank has an outlet at its bottom connected to the inlet of the trichlorosilane synthesis furnace; the outlet at the bottom of the silicon powder feeding tank has a feeding valve, and the feeding valve and the inlet valve are connected by a feeding pipe.

[0026] A hydrogen pipeline carrying hydrogen is used to transport hydrogen. The hydrogen pipeline carrying hydrogen is branched and connected to the inlet at the top of the silicon powder feeding tank and the feeding pipe. A pressure gauge and a feeding tank pressure regulating valve are connected in sequence between the inlet at the top of the silicon powder feeding tank and the hydrogen pipeline carrying hydrogen. A hydrogen regulating valve and a flow meter are connected in sequence between the feeding pipe and the hydrogen pipeline carrying hydrogen.

[0027] In some embodiments of the present invention, step S1 includes:

[0028] Step S11 The hydrogen regulating valve for the feed material should be kept open at all times;

[0029] Step S12: Record the pressure regulating valve of the feed tank at... PID setpoint at time Record the trichlorosilane synthesis furnace in The bed pressure difference at any given time; the pressure gauge records the silicon powder feeding tank at... Constant pressure value;

[0030] Step S13: Close the pressure regulating valve of the feed tank.

[0031] In some embodiments of the present invention, step S2 includes:

[0032] Step S21: Record the pressure of the silicon powder feeding tank using the pressure gauge. Pressure value at any moment ; Time later than time;

[0033] Step S22: Open the feed valve at the inlet of the trichlorosilane synthesis furnace until... time; Time later than time;

[0034] Step S23: Record the pressure of the silicon powder feeding tank using the pressure gauge. Pressure value at any moment ;Compare Is it greater than If yes, proceed to step S24; otherwise, repeat steps S21-S23.

[0035] Step S24: Close the feeding valve.

[0036] In some embodiments of the present invention, step S3 includes:

[0037] Step S31: Open the feed valve of the trichlorosilane synthesis furnace to... time;

[0038] Step S32: Record the flow rate of hydrogen from the hydrogen pipeline carrying the material to the silicon powder feeding tank using the flow meter. Flow value at any time , Time later than Time; comparison If the value exceeds a preset threshold, proceed to step S4; otherwise, keep the feed valve open until... It is greater than the preset threshold.

[0039] In some embodiments of the present invention, step S4 includes:

[0040] Step S41: Verify whether the pressure regulating valve of the feed tank is closed. If yes, proceed to step S42. If no, first close the pressure regulating valve of the feed tank, and then proceed to step S42.

[0041] Step S42: Open the discharge valve to discharge the material;

[0042] Step S43: Start the material feeding timer;

[0043] Step S44: During the feeding time timing, the flow rate of hydrogen from the hydrogen pipeline to the silicon powder feeding tank is recorded by the flow meter; it is determined whether the feeding time timing has ended and whether the flow rate measured by the flow meter is greater than the preset threshold. If yes, proceed to step S5; otherwise, continue to wait until the above conditions are met before proceeding to step S5.

[0044] In some embodiments of the present invention, step S5 includes:

[0045] Step S51: Close the discharge valve and the feed valve;

[0046] Step S52: Close the hydrogen regulating valve for the feed material;

[0047] Step S53: Set the PID setting value of the hydrogen regulating valve to... Recorded in time .

[0048] Secondly, the present invention provides a storage medium storing a computer program, which, when executed, implements the above-described feeding method for a trichlorosilane synthesis furnace.

[0049] Thirdly, the present invention provides a control system based on the DeltaV platform, characterized in that it includes the aforementioned storage medium.

[0050] The embodiments of the present invention have at least the following advantages or beneficial effects:

[0051] 1. The feeding quality of silicon powder is measured without weighing based on the feeding time and the pressure difference change inside the silicon powder feeding tank before and after feeding. This allows for precise control of the amount and rate of silicon powder input, preventing silicon powder from accumulating in the trichlorosilane synthesis furnace and failing to disperse evenly. It also helps to effectively control the reaction temperature in the trichlorosilane synthesis furnace within the range of 280-330℃, avoiding sudden temperature changes in the furnace, thereby ensuring product purity and improving the conversion rate of hydrogen chloride to silicon powder.

[0052] 2. Before feeding silicon powder, ensure the smooth flow between the silicon powder feeding tank, feeding pipe, and trichlorosilane synthesis furnace. The blockage situation is significantly improved, and the frequency of bed collapse in the trichlorosilane synthesis furnace is reduced by 10%.

[0053] 3. Silicon powder is conveyed by pneumatics only, without the need for screw propellers, rotating cloth discs, silicon powder spraying devices, etc., which reduces reliance on electrical equipment, lowers power consumption, and reduces maintenance costs.

[0054] 4. The above methods can be programmed and implemented through the DeltaV platform, which can improve the degree of automation and enable large-scale production based on program templates.

[0055] Other features and advantages of the present invention will be set forth in the following description. Attached Figure Description

[0056] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0057] Figure 1 This is a schematic diagram of the feeding system for the trichlorosilane synthesis furnace provided in Example 2.

[0058] Icons: R1 - Trichlorosilane synthesis furnace, V2 - Silicon powder storage tank, V1 - Silicon powder feeding tank, XV1 - Feed valve, HV3 - Feeding valve, HV1 - Feeding tank pressure regulating valve, HV2 - Hydrogen carrying regulating valve. Detailed Implementation

[0059] In the following description, only certain exemplary embodiments are presented briefly. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of the embodiments of the invention.

[0060] The embodiments of the present invention will be described in detail below.

[0061] Example 1

[0062] See Figure 1 This embodiment provides a method for feeding a trichlorosilane synthesis furnace, including:

[0063] Step S1: Record the pressure difference of the bed in the trichlorosilane synthesis furnace R1 and the pressure data in the silicon powder feeding tank V1 before feeding.

[0064] Step S2: Backfill hydrogen gas into the outlet at the bottom of silicon powder feeding tank V1 to verify whether the outlet at the bottom of silicon powder feeding tank V1 is unobstructed. If it is blocked, clear the blockage by backfilling hydrogen gas.

[0065] Step S3: Charge hydrogen gas into the feed port of the trichlorosilane synthesis furnace R1 to verify whether the feed port of the trichlorosilane synthesis furnace R1 is unobstructed. If it is blocked, purge it with hydrogen gas to clear the blockage.

[0066] Step S4: Silicon powder is fed into the trichlorosilane synthesis furnace R1 using hydrogen gas from step S3. The mass of silicon powder fed is measured without weighing based on the feeding time and the pressure difference change inside the silicon powder feeding tank V1 before and after feeding.

[0067] Step S5: End the feeding process. The silicon powder feeding tank V1 and the trichlorosilane synthesis furnace R1 are restored to the process state at the time of step S1.

[0068] Step S6: Repeat steps S2-S5 multiple times to feed materials.

[0069] Example 2

[0070] See Figure 1 This embodiment provides a feeding system for a trichlorosilane synthesis furnace R1, including a trichlorosilane synthesis furnace R1, a silicon powder storage tank V2, a silicon powder feeding tank V1, and a hydrogen pipeline carrying the material.

[0071] The trichlorosilane synthesis furnace R1 has a feed inlet, which is equipped with a feed valve XV1.

[0072] The outlet at the bottom of silicon powder storage tank V2 is connected to the inlet at the top of silicon powder feeding tank V1.

[0073] The outlet at the bottom of the silicon powder feeding hopper V1 is connected to the inlet of the trichlorosilane synthesis furnace R1. The outlet at the bottom of the silicon powder feeding hopper V1 has a feeding valve, and the feeding valve and the inlet valve XV1 are connected by a feeding pipe.

[0074] The hydrogen-carrying pipeline is used to transport hydrogen. The hydrogen-carrying pipeline is branched and connected to the inlet at the top of the silicon powder feeding tank V1 and the feeding pipe. A pressure gauge and a feeding tank pressure regulating valve HV1 are connected sequentially between the inlet at the top of the silicon powder feeding tank V1 and the hydrogen-carrying pipeline. A hydrogen-carrying regulating valve HV2 and a flow meter are connected sequentially between the feeding pipe and the hydrogen-carrying pipeline.

[0075] The feeding method of the trichlorosilane synthesis furnace in Example 1 is applied to the R1 feeding system of the trichlorosilane synthesis furnace in this example.

[0076] Step S1 includes:

[0077] Step S11: Open the hydrogen regulating valve HV2 and delay for 3 seconds until... At any time, pressurize and unclog the pipeline.

[0078] Step S12: Record the pressure regulating valve HV1 of the material tank at... PID setpoint at time Record the trichlorosilane synthesis furnace R1 in The bed pressure difference at any given time; the pressure difference of silicon powder feed tank V1 is recorded by a pressure gauge. Constant pressure level.

[0079] Step S13: Close the pressure regulating valve HV1 of the feed tank.

[0080] Through the above steps S11-S13, the pressure difference of the bed in the trichlorosilane synthesis furnace R1 and the pressure data in the silicon powder feeding tank V1 before feeding can be recorded, and it can be ensured that there are no other pressure sources in the silicon powder feeding tank V1 during the subsequent feeding process (steps S4-S5).

[0081] Step S2 includes:

[0082] Step S21: Record the pressure of silicon powder feeding tank V1 using a pressure gauge. Pressure value at any moment (Real-time pressure value); Time later than time.

[0083] Step S22: Open the feed valve XV1 at the feed inlet of the trichlorosilane synthesis furnace R1 to a large opening degree (e.g., fully open), until... time; Time later than time.

[0084] Step S23: Record the pressure of silicon powder feeding tank V1 using a pressure gauge. Pressure value at any moment ;Compare Is it greater than If yes (indicating that the outlet at the bottom of silicon powder feeder V1 to the hydrogen pipeline carrying the material is unobstructed), then proceed to step S24; otherwise, repeat steps S21-S23.

[0085] Step S24: Close the discharge valve.

[0086] Through the above steps S21-S24, it is possible to verify whether the outlet at the bottom of the silicon powder feeding tank V1 to the hydrogen pipeline carrying the material is unobstructed, and to clear any blockages in a timely manner.

[0087] Step S3 includes:

[0088] Step S31: Open the feed valve XV1 of the trichlorosilane synthesis furnace R1 to... time.

[0089] Step S32: Record the flow rate of hydrogen from the hydrogen pipeline carrying the silicon powder to the silicon powder feeding tank V1 using a flow meter. Flow value at any time , Time later than Time; comparison If the value exceeds a preset threshold, proceed to step S4; otherwise, keep the feed valve XV1 open until... Greater than the preset threshold.

[0090] Through the above steps S31-S32, it is possible to verify whether the hydrogen pipeline from R1 of the trichlorosilane synthesis furnace to the material pipeline is unobstructed, and to clear the blockage in time by purging with hydrogen gas when it is blocked.

[0091] Step S4 includes:

[0092] Step S41: Verify whether the feed tank pressurization regulating valve HV1 is closed. If yes, proceed to step S42. If no, first close the feed tank pressurization regulating valve HV1, and then proceed to step S42.

[0093] Step S42: Open the discharge valve to a large opening degree (e.g., fully open) to discharge the material (start discharging).

[0094] Step S43: Start the material feeding timer.

[0095] Step S44: During the feeding time timing, the flow rate of hydrogen from the hydrogen pipeline to the silicon powder feeding tank V1 is recorded by the flow meter; it is determined whether the feeding time timing has ended and whether the flow rate measured by the flow meter is greater than the preset threshold. If yes, proceed to step S5 (end feeding); otherwise, continue to wait until the above conditions are met before proceeding to step S5.

[0096] Through the above steps S41-S44, silicon powder can be fed into the trichlorosilane synthesis furnace R1 using hydrogen gas in step S3. The feeding quality of silicon powder is achieved without weighing based on the feeding time and the pressure difference change inside the silicon powder feeding tank V1 before and after feeding, so as to accurately control the feeding quality of silicon powder. In actual automatic control, the feeding time is the main control variable, while the pressure difference change ΔP is used as a verification indicator and interlock condition for whether the process is normal.

[0097] The feeding quality of silicon powder is achieved without weighing based on the feeding time: under the premise of constant feeding rate, the feeding time and feeding quality are directly proportional.

[0098] The feeding quality of silicon powder is achieved without weighing instruments based on the pressure difference change inside the silicon powder feeding tank V1 before and after feeding.

[0099] If the cross-sectional area of ​​the tank is A and the bulk density of the silicon powder is ρ, then the mass m of the material being fed corresponding to the change in material level height Δh is:

[0100] m=A·Δh·ρ (1)

[0101] The relationship between the pressure difference change ΔP and the material level height change Δh:

[0102] ΔP=k·ρ·g·Δh (2)

[0103] In formula (2):

[0104] k: System resistance coefficient (derived from laboratory test data, mainly affected by elbows, valves, and pipe diameter);

[0105] g: acceleration due to gravity (9.8 m / s²) 2 )

[0106] Substituting equation (2) into equation (1), we get: m = (A·ΔP) / (k·g), then the pressure difference change ΔP is:

[0107] ΔP = (m·k·g) / A (3)

[0108] Based on experimental and manual feeding experience, those skilled in the art can determine the optimal feeding mass m suitable for the processing capacity of R1 in this trichlorosilane synthesis furnace. The automated feeding program (the computer program described below) can then use this optimal feeding mass to deduce the corresponding pressure difference change. When the pressure difference before and after feeding reaches this pressure difference change, it indicates that the optimal feeding mass m has been reached.

[0109] Step S5 includes:

[0110] Step S51: Close the discharge valve and feed valve XV1.

[0111] Step S52: Close the hydrogen regulating valve HV2.

[0112] Step S53: Set the PID setting value of the hydrogen regulating valve HV2 to [value missing]. Recorded in time .

[0113] By going through the above steps S51-S53, the feeding process can be completed, and the silicon powder feeding tank V1 and the trichlorosilane synthesis furnace R1 can be restored to the process state at the time of step S1.

[0114] Step S6 includes:

[0115] Step S61: Start timing the interval between two adjacent feeding operations.

[0116] Step S62: After the timing ends, start step S2 to achieve multiple feedings.

[0117] This embodiment also provides a storage medium storing a computer program, which, when executed, implements the above-described feeding method for the trichlorosilane synthesis furnace.

[0118] This embodiment also provides a control system based on the DeltaV platform, including the aforementioned storage medium.

[0119] Based on the above, the above-mentioned feeding method for the trichlorosilane synthesis furnace has at least the following beneficial effects:

[0120] I. The feeding quality of silicon powder is achieved by weighing without weighing based on the feeding time and the pressure difference change inside the silicon powder feeding tank V1 before and after feeding. This allows for precise control of the amount and rate of silicon powder input, preventing silicon powder from accumulating and becoming unevenly dispersed in the trichlorosilane synthesis furnace R1. It also helps to effectively control the reaction temperature in the trichlorosilane synthesis furnace R1 within the range of 280-330℃, avoiding sudden temperature changes in the furnace R1, thereby ensuring product purity and improving the conversion rate of hydrogen chloride to silicon powder.

[0121] 2. The pressure source of silicon powder feeding tank V1 during the feeding process to trichlorosilane synthesis furnace R1 is only provided by hydrogen in the feed port of trichlorosilane synthesis furnace R1 via the hydrogen pipeline. There is no other pressure source during the feeding process, which makes it easy to achieve the feeding quality of silicon powder without weighing by measuring the pressure difference inside silicon powder feeding tank V1 before and after feeding.

[0122] 3. Verify unobstructed flow and use the same gas source for unblocking. Before feeding silicon powder, ensure the unobstructed flow between silicon powder feeding tank V1, feeding pipe and trichlorosilane synthesis furnace R1. If the blockage is significantly improved, the frequency of bed collapse in trichlorosilane synthesis furnace R1 will be reduced by 10%-20% (if manual or traditional feeding is used, after the pipeline is blocked, the blockage will be suddenly cleared by maintenance or external force, which will cause the synthesis furnace to collapse).

[0123] Fourth, silicon powder is transported by pneumatic means (hydrogen in the hydrogen pipeline), without the need for screw propellers, rotating material distribution discs, silicon powder injection devices, etc., resulting in less reliance on electrical equipment, lower power consumption, and reduced maintenance costs.

[0124] Fifth, the above methods can be programmed and implemented through the DeltaV platform, which can improve the degree of automation, enable large-scale production based on program templates, and reduce human intervention.

[0125] Finally, it should be noted that the above are merely preferred embodiments of this application and are not intended to limit this application. For those skilled in the art, this application can have various modifications and variations. Without conflict, the embodiments and features described in the embodiments of this application can be arbitrarily combined with each other. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for feeding materials into a trichlorosilane synthesis furnace, characterized in that, include: Step S1: Record the pressure difference of the trichlorosilane synthesis furnace bed and the pressure data in the silicon powder feeding tank before feeding. Step S2: Backfill hydrogen gas into the outlet at the bottom of the silicon powder feeding tank to verify whether the outlet at the bottom of the silicon powder feeding tank is unobstructed. If it is blocked, clear it by backfilling hydrogen gas. Step S3: Charge hydrogen into the feed inlet of the trichlorosilane synthesis furnace to verify whether the feed inlet of the trichlorosilane synthesis furnace is unobstructed. If it is blocked, purge it with hydrogen. Step S4: Silicon powder is fed into the trichlorosilane synthesis furnace using hydrogen gas from step S3. The mass of silicon powder fed is measured without weighing based on the feeding time and the pressure difference change inside the silicon powder feeding tank before and after feeding. Step S5: End the feeding process. The silicon powder feeding tank and the trichlorosilane synthesis furnace are restored to the process state in step S1. The method for feeding a trichlorosilane synthesis furnace is applied to a trichlorosilane synthesis furnace feeding system, the trichlorosilane synthesis furnace feeding system comprising: The trichlorosilane synthesis furnace has a feed inlet, which is equipped with a feed valve; A silicon powder feeding tank has an outlet at its bottom connected to the inlet of the trichlorosilane synthesis furnace; the outlet at the bottom of the silicon powder feeding tank has a feeding valve, and the feeding valve and the inlet valve are connected by a feeding pipe; A hydrogen-carrying pipeline is used to transport hydrogen gas. The hydrogen-carrying pipeline is connected to the inlet at the top of the silicon powder feeding tank and the feeding pipe, respectively. A pressure gauge and a feeding tank pressure regulating valve are connected in sequence between the inlet at the top of the silicon powder feeding tank and the hydrogen-carrying pipeline. A hydrogen-carrying regulating valve and a flow meter are connected in sequence between the feeding pipe and the hydrogen-carrying pipeline. Step S1 includes: Step S11: Open the hydrogen regulating valve and delay for 3 seconds until... time; Step S12: Record the pressure regulating valve of the feed tank at... PID setpoint at time Record the trichlorosilane synthesis furnace in The bed pressure difference at any given time; the pressure gauge records the silicon powder feeding tank at... Constant pressure value; Step S13: Close the pressure regulating valve of the feeding tank; Step S3 includes: Step S31: Open the feed valve of the trichlorosilane synthesis furnace to... time; Step S32: Record the flow rate of hydrogen from the hydrogen pipeline carrying the material to the silicon powder feeding tank using the flow meter. Flow value at any time , Time later than Time; comparison If the value exceeds a preset threshold, proceed to step S4; otherwise, keep the feed valve open until... Greater than the preset threshold; Step S4 includes: Step S41: Verify whether the pressure regulating valve of the feed tank is closed. If yes, proceed to step S42. If no, first close the pressure regulating valve of the feed tank, and then proceed to step S42. Step S42: Open the discharge valve to discharge the material; Step S43: Start the material feeding timer; Step S44: During the feeding time timing, the flow rate of hydrogen from the hydrogen pipeline to the silicon powder feeding tank is recorded by the flow meter; it is determined whether the feeding time timing has ended and whether the flow rate measured by the flow meter is greater than the preset threshold. If yes, proceed to step S5; otherwise, continue to wait until the above conditions are met before proceeding to step S5.

2. The feeding method for the trichlorosilane synthesis furnace according to claim 1, characterized in that, Step S2 includes: Step S21: Record the pressure of the silicon powder feeding tank using the pressure gauge. Pressure value at any moment ; Time later than time; Step S22: Open the feed valve at the inlet of the trichlorosilane synthesis furnace until... time; Time later than time; Step S23: Record the pressure of the silicon powder feeding tank using the pressure gauge. Pressure value at any moment ;Compare Is it greater than If yes, proceed to step S24; otherwise, repeat steps S21-S23. Step S24: Close the feeding valve.

3. The feeding method for the trichlorosilane synthesis furnace according to claim 1, characterized in that, Step S5 includes: Step S51: Close the discharge valve and the feed valve; Step S52: Close the hydrogen regulating valve for the feed material; Step S53: Set the PID setting value of the hydrogen regulating valve to... Recorded in time .

4. A storage medium storing a computer program, characterized in that, When the computer program is executed, it implements the feeding method for the trichlorosilane synthesis furnace as described in any one of claims 1 to 3.

5. A control system based on the DeltaV platform, characterized in that, Includes the storage medium as described in claim 4.

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