Method and apparatus for enhancing self-sharpening of abrasive wheels and wafer thinning apparatus

Abstract

The application relates to the technical field of semiconductor wafer processing, and provides a grinding wheel self-sharpening enhancement method and device and wafer thinning equipment. The method comprises the following steps: determining a main flushing position: judging whether the grinding wheel is an outer edge processing based on the position of a grinding line of the grinding wheel for grinding the wafer and the rotating direction of the wafer, if yes, the main flushing position is the outer side of the grinding wheel, and if not, the main flushing position is the inner side of the grinding wheel; setting the liquid spraying pressure and the swing frequency of the flusher at the main flushing position to be greater than the liquid spraying pressure and the swing frequency of the flusher at the opposite side respectively; determining the flushing direction of the flusher based on the adhesion state of abrasive grains forming the grinding wheel and the adhesion state of contaminants on the grinding wheel; and adjusting the liquid spraying pressure and the swing frequency of the flusher based on the ratio of the feeding speed of the grinding wheel in the grinding process to the set feeding speed. The application can effectively enhance the self-sharpening of the grinding wheel, simultaneously provide protection for the grinding tooth, and improve the wafer thinning quality and efficiency.

Description

[0001] This application is a divisional application of the invention patent filed on May 26, 2025, with application number 202510679798.5 and title "Method, Apparatus and Wafer Thinning Equipment for Enhancing the Self-Sharpening Properties of Grinding Wheels". Technical Field

[0002] This application relates to the field of semiconductor wafer processing technology, specifically to a method, apparatus, and wafer thinning equipment for enhancing the self-sharpening properties of a grinding wheel. Background Technology

[0003] Before integrated circuit packaging, it is typically necessary to remove a certain thickness of excess substrate material from the back side of the wafer. This process is called wafer backside thinning, and the corresponding equipment is wafer thinning equipment. With the development and advancement of advanced packaging technologies, the product structures handled in the thinning stage are becoming increasingly complex, evolving from processing wafers made of single materials to processing wafers made of composite materials. When processing composite material wafers with grinding wheels, the presence of heterogeneous materials such as epoxy resin, metals, silicon, and adhesives results in complex debris adhesion. Debris adheres to the sidewalls or bottom of the grinding teeth as the grinding wheel rotates, causing wheel dulling and insufficient self-sharpening, thus affecting the thinning effect and product quality. In existing technologies, the self-sharpening of the grinding wheel is mainly achieved by replacing the grinding wheel or adjusting processing parameters, but these methods are inefficient, costly, and difficult to meet the requirements of high-precision processing. Summary of the Invention

[0004] This application provides a method, apparatus, and wafer thinning equipment for enhancing the self-sharpening properties of grinding wheels to solve or alleviate at least some of the problems mentioned above.

[0005] According to one aspect of this application, a method for enhancing the self-sharpening property of a grinding wheel is provided. The grinding wheel is used to grind a wafer in a wafer thinning apparatus. The grinding wheel has rinsing devices disposed on its inner side, outer side, and bottom. The rinsing devices spray cleaning fluid onto the grinding wheel. The method includes:

[0006] Determine the main rinsing position: Based on the position of the grinding line of the grinding wheel on the wafer and the direction of the wafer's rotation, determine whether the grinding wheel is used for external cutting. If so, the main rinsing position is the outer side of the grinding wheel; otherwise, the main rinsing position is the inner side of the grinding wheel.

[0007] The spray pressure and oscillation frequency of the flusher at the main flushing position are set to be greater than the spray pressure and oscillation frequency of the flusher on the opposite side, respectively.

[0008] The flushing direction of the flusher is determined based on the adhesion state of the abrasive particles forming the grinding wheel and the adhesion state of contaminants on the grinding wheel.

[0009] Based on the ratio of the feed speed of the grinding wheel to the set feed speed during the grinding process, the spray pressure and oscillation frequency of the flushing device are adjusted.

[0010] Optionally, the method further includes: increasing the spray pressure and oscillation frequency of the inner, outer, and bottom flushers as the rotation speed of the grinding wheel increases, so as to reduce the dispersion effect of the surrounding air layer on the cleaning fluid caused by the rotation of the grinding wheel, and the increase in spray pressure and oscillation frequency of the inner and outer flushers is greater than the increase in spray pressure and oscillation frequency of the bottom flusher.

[0011] Optionally, the grinding line extends from the center of the wafer to the edge of the wafer; "determining whether the grinding wheel is performing external cutting based on the position of the grinding line and the rotation direction of the wafer" includes: when the rotation direction of the portion of the wafer outside the grinding wheel is towards the grinding line, it is determined to be external cutting; when the rotation direction of the portion of the wafer outside the grinding wheel is away from the grinding line, it is determined to be internal cutting.

[0012] Optionally, "determining the flushing direction of the flusher based on the adhesion state of the abrasive grains forming the grinding wheel and the adhesion state of contaminants on the grinding wheel" includes:

[0013] The initial direction of the flusher is set so that its component along the tangential direction of the grinding wheel is in the same direction as the tangential velocity of the grinding wheel. The spray pressure is gradually increased from the initial value to the maximum value. If the feed speed of the grinding wheel gradually increases from below the set feed speed to the same as the set feed speed and the wear of the grinding wheel exceeds the wear range, then the adhesion state of the abrasive particles is determined to be easy to detach, and the component of the flushing direction along the tangential direction of the grinding wheel is kept in the same direction as the tangential velocity of the grinding wheel. If the feed speed of the grinding wheel is always lower than the set feed speed and the wear of the grinding wheel is within the wear range, then the adhesion state of the abrasive particles is determined to be difficult to detach and the adhesion state of the contaminants is difficult to detach. The flushing direction of the flusher is then set so that the component of the flushing direction along the tangential direction of the grinding wheel is opposite to the tangential velocity of the grinding wheel.

[0014] Optionally, the method further includes: when the adhesion state of the abrasive particles is not easy to detach and the adhesion state of the contaminants is not easy to detach, increasing the spray pressure and oscillation frequency of the bottom flusher, so that the spray pressure and oscillation frequency of the bottom flusher are equal to or slightly greater than the spray pressure and oscillation frequency of the flusher at the main flushing position.

[0015] Optionally, the method further includes: when the rinsing device is set such that the component of its rinsing direction along the tangential direction of the grinding wheel is opposite to the tangential velocity of the grinding wheel, gradually increasing the spray pressure from the initial value to the maximum value; if the feed speed of the grinding wheel is always lower than the set feed speed and the wear of the grinding wheel is within the wear range, then a dressing device with diamond particles on top is pressed against the bottom of the grinding wheel for grinding and dressing.

[0016] Optionally, "adjusting the spray pressure and oscillation frequency of the flusher based on the ratio of the feed speed of the grinding wheel to the set feed speed during the grinding process" includes: increasing the spray pressure and oscillation frequency of the flusher when the ratio of the feed speed of the grinding wheel to the set feed speed is lower than a set range; and decreasing the spray pressure and oscillation frequency of the flusher when the ratio of the feed speed of the grinding wheel to the set feed speed exceeds a set range; wherein the set range is 0.9 to 1.1.

[0017] Optionally, the method further includes increasing the spray pressure and oscillation frequency of the bottom flusher when the abrasive particles are in an adhesion state that is not easy to detach and the contaminants are in an adhesion state that is not easy to detach.

[0018] Optionally, the method further includes: adjusting the spray pressure and oscillation frequency of the flusher based on the ratio of the processing current of the motor driving the grinding wheel in two consecutive time periods.

[0019] Optionally, "adjusting the spray pressure and oscillation frequency of the flusher based on the ratio of the processing current of the motor driving the grinding wheel in two consecutive time periods" includes: increasing the spray pressure and oscillation frequency when the ratio of the processing current in two consecutive time periods exceeds a reference range; and decreasing the spray pressure and oscillation frequency when the ratio of the processing current in two consecutive time periods is lower than the reference range; the lower limit of the reference range is 1, and the upper limit is the ratio of the maximum current of the motor driving the grinding wheel to the instantaneous current during 3 seconds of grinding.

[0020] Optionally, the flushing device is equipped with an ultrasonic generator, which causes the cleaning fluid to generate ultrasonic vibrations.

[0021] Optionally, two sets of rinsers are provided on both sides of the center line connecting the wafer and the grinding wheel. Each set of rinsers includes rinsers located on the inner side, outer side and bottom of the grinding wheel. The method further includes: according to the rotation direction of the grinding wheel, activating a set of rinsers located downstream of the wafer along the rotation direction of the grinding wheel.

[0022] According to another aspect of this application, a grinding wheel self-sharpening enhancement device is provided for performing the grinding wheel self-sharpening enhancement method described in the foregoing aspect, comprising:

[0023] Three flushers are located on the inner, outer, and bottom sides of the grinding wheel, respectively. Each flusher has a wobbly nozzle to wobbly spray cleaning fluid onto the grinding wheel.

[0024] A controller, which is electrically connected to each of the three flushers, is used to regulate one or more parameters of the three flushers, including opening and closing, spray pressure, flushing direction, and oscillation frequency.

[0025] Optionally, the rinsing device further includes an ultrasonic generator that causes the cleaning fluid to generate ultrasonic vibrations to assist in removing contaminants from the grinding wheel.

[0026] According to another aspect of this application, a wafer thinning apparatus is provided, comprising:

[0027] A support stage is used to hold the wafer and rotate it.

[0028] A grinding apparatus, including a grinding wheel for grinding the wafer;

[0029] The grinding wheel self-sharpening enhancement device as described above.

[0030] The grinding wheel self-sharpening enhancement method, apparatus, and wafer thinning equipment of this application, especially for wafers made of composite materials, fully consider the adhesion characteristics of the abrasive grains and the complexity and adhesion characteristics of contaminants. Based on the processing conditions of the grinding wheel and the changing trends of processing parameters, the main adhesion sites of contaminants and the adhesion characteristics between abrasive grains and contaminants are determined. This leads to the determination of the setting and adjustment methods for rinsing parameters such as the main rinsing position, rinsing direction, spray pressure, and oscillation frequency of the rinsing device. Thus, by using rinsing, the self-sharpening property of the grinding wheel is effectively improved while simultaneously performing targeted rinsing, and effective protection is provided for the grinding teeth, preventing damage during rinsing, ensuring the service life of the grinding wheel, reducing the frequency of grinding wheel replacement, and improving the grinding wheel's wafer thinning quality and grinding efficiency. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings.

[0032] Figure 1 A wafer thinning apparatus according to an embodiment of the present invention is illustrated in a schematic perspective view;

[0033] Figure 2 It shows Figure 1A schematic diagram of a grinding wheel grinding a wafer;

[0034] Figure 3 It shows Figure 2 A top view of the grinding wheel and wafer, showing only the grinding teeth on the grinding wheel;

[0035] Figure 4 It shows Figure 2 A schematic diagram illustrating the contact state between the grinding wheel and the wafer;

[0036] Figure 5 It shows Figure 2 A schematic diagram illustrating another contact state between the grinding wheel and the wafer;

[0037] Figure 6 It shows Figure 2 A microscopic schematic diagram of the grinding teeth of the grinding wheel in the image;

[0038] Figure 7 A schematic diagram of a grinding wheel self-sharpening enhancement device according to one embodiment of this application is shown;

[0039] Figure 8 It shows Figure 7 A schematic diagram of the flushing device on the side of the grinding wheel;

[0040] Figure 9 It shows Figure 7 A schematic diagram of the flushing device at the bottom of the grinding wheel;

[0041] Figure 10 A bottom view of the molars and side irrigator is shown;

[0042] Figure 11 A side view of the molars and bottom irrigator is shown;

[0043] Figure 12 A bottom view of the molars and the side flusher at another angle is shown;

[0044] Figure 13 A side view of the molars and the bottom flusher at another angle is shown;

[0045] Figure 14 It shows Figure 2 A schematic diagram of the trimmer is shown in the figure;

[0046] Figure 15 A flowchart of a method for enhancing the self-sharpening properties of a grinding wheel according to one embodiment of this application is shown.

[0047] Reference numerals: Worktable 31; Support table 32; Grinding device 2; Grinding wheel 100; Rough grinding section 21; Fine grinding section 22; Cleaning unit 5; Simple robotic arm 6; Base 110; Grinding tooth 120; Abrasive grain 121; Pore 122; Adhesive 123; Contaminant 124; Irrigator 200; Nozzle 210; Cleaning fluid 211; Ultrasonic generator 220; Dresser 300; Dressing head 310; Diamond grain 311; Dressing seat 320; Wafer W; Grinding line L. Detailed Implementation

[0048] To enable those skilled in the art to better understand the technical solutions in the embodiments of this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art should fall within the protection scope of the embodiments of this application.

[0049] In the description of this application, it should be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0050] In addition, in the description of this application, unless otherwise specified and limited, it should be noted that the terms "installation", "connection" and "linking" should be interpreted broadly. For example, they can refer to mechanical or electrical connections, or internal connections between two components. They can be direct connections or indirect connections through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms according to the specific circumstances.

[0051] Figure 1 A schematic perspective view illustrates a wafer thinning apparatus provided in one embodiment of this application, comprising:

[0052] The worktable 31 supports multiple carrier platforms 32, which hold and hold the wafer W and can rotate the wafer W. The worktable 31 can rotate around its vertical central axis so that the worktable 31 drives the multiple carrier platforms 32 to rotate and move as a whole, thereby realizing the position change of the carrier platforms 32 between different workstations. Each carrier platform 32 can also rotate independently.

[0053] Grinding apparatus 2 includes a grinding wheel 100, which abuts against a wafer W to perform grinding and thinning processing on the wafer W. The grinding wheel 100 is connected to a spindle assembly, which has a tilting mechanism to adjust the tilt angle of the spindle in the front-back and left-right directions.

[0054] like Figure 1 As shown, in one possible implementation, three independently rotatable support platforms 32 are evenly distributed on the worktable 31. Each platform has a first suction cup, a second suction cup, and a third suction cup for adsorbing the wafer W. The three suction cups can be porous ceramic suction cups with identical structures to achieve vacuum adsorption of the wafer W. Furthermore, the lines connecting the centers of the three support platforms 32 to the center of the worktable 31 form a 120° angle with each other. The three support platforms 32 correspond to three workstations: a rough grinding station, a fine grinding station, and a loading / unloading station. The two workstations opposite the grinding wheel 100 are used for rough grinding and fine grinding, respectively, while the remaining workstation is used for loading / unloading and cleaning the wafer W. The rotation of the worktable 31 allows the three support platforms 32 to switch between these three workstations, enabling the support platforms 32 to carry the wafer W in a cyclical movement following the sequence of loading / unloading station - rough grinding station - fine grinding station - loading / unloading station. This embodiment achieves fully automated loading / unloading, continuous grinding, and cleaning of the wafer W through repeated cycles. Using a rotary table 31 for wafer grinding has the advantages of high material removal rate, low surface damage to wafers, and easy automation.

[0055] The grinding apparatus 2 mainly consists of a coarse grinding section 21 and a fine grinding section 22. The grinding wheel 100 in the coarse grinding section 21 is used for coarse grinding of the wafer W, and the grinding wheel 100 in the fine grinding section 22 is used for fine grinding of the wafer W. The grinding process involves pressing the grinding wheel 100 onto the surface of the wafer W and rotating it to grind away a certain thickness.

[0056] For example Figure 1 As shown, the wafer thinning equipment also includes a cleaning unit 5, which is used to clean the suction cup and the wafer W. The wafer thinning equipment also includes a simple robotic arm 6, which is used to place the wafer W on the support stage 32 for grinding, and to remove the wafer W from the support stage 32 for subsequent transfer after grinding and cleaning. As one possible implementation, the simple robotic arm 6 has internal tubing for vacuuming to achieve vacuum adsorption of the wafer W.

[0057] Figure 2 It shows Figure 1 The schematic diagram of the grinding wheel 100 grinding the wafer W shows that the grinding wheel 100 includes a base 110 and grinding teeth 120 disposed on the base 110. The grinding wheel 100 is pressed on the wafer W and rotates and feeds along the axial direction at a certain feed speed to grind the wafer W. Figure 3 It shows Figure 2The top view shows only the grinding teeth 120 on the grinding wheel 100, which are evenly spaced along the circumference. Figure 4 , Figure 5 It shows Figure 2 The diagram illustrates the contact state between the grinding wheel 100 and the wafer W. During rotary grinding, the grinding wheel 100 cuts into the wafer W, creating an arc-shaped contact area, as shown below. Figure 4 The solid black arc in the image can be called the grinding line L. The grinding wheel 100 and the wafer W can adopt a semi-contact grinding method, that is, the grinding line L is only a part of the arc where the grinding wheel 100 and the wafer W overlap, about half of it. This can reduce the grinding force and grinding heat during the grinding of the wafer W, and improve the surface quality of the wafer W.

[0058] Figure 6 A microscopic schematic diagram of the grinding teeth 120 of the grinding wheel 100 is shown. The grinding teeth 120 are formed on the base 110 by mixing abrasive grains 121 with materials such as binder 123 and pore-forming agent, and through sintering, electroplating, or resin curing processes. In the figure, black dots represent abrasive grains 121, white ellipses represent formed pores 122, gray irregular shapes surrounding abrasive grains 121 represent binder 123, and white cloud-like shapes represent contaminants 124. The abrasive grains 121 are bonded laterally and vertically by the binder 123. Here, lateral refers to parallel to the lower surface of the base 110, and vertical refers to perpendicular to the lower surface of the base 110.

[0059] With the development and advancement of advanced packaging technologies, the structure of wafers W processed in the thinning stage has become increasingly complex, evolving from processing single materials to processing composite materials. These include PI (polyimide), DAF (die bonding film), EMC (epoxy molding compound), and others used for wafer packaging or bonding. When the grinding wheel 100 processes composite materials, due to the simultaneous presence of heterogeneous materials such as epoxy resin, metal, silicon, and adhesives, grinding debris (or contaminants 124) adheres to the sidewalls or bottom of the grinding tooth 120 as the grinding wheel 100 rotates. Figure 6 The diagram shows that contaminant 124 may enter the pores 122 inside the grinding wheel 120. The presence of contaminant 124 causes passivation of the grinding wheel 100, resulting in insufficient self-sharpening ability of the grinding wheel 100. This affects the amount and efficiency of grinding removal of the wafer W by the grinding wheel 100, and ultimately affects the surface finish of the wafer. "Self-sharpening" refers to the ability of the grinding wheel 100 to expose sharp abrasive grains 121 to maintain cutting performance.

[0060] In existing technologies, the self-sharpening property of the grinding wheel 100 is usually maintained by replacing the grinding wheel 100 or adjusting the processing parameters. However, replacing the grinding wheel 100 is costly and prone to introducing operational errors, making it difficult to meet the requirements of high-precision and high-efficiency processing. Furthermore, conventional cleaning structures directly rinse the contaminants 124 from the surface of the grinding teeth 120 from a fixed position. This does not consider the adhesiveness of the abrasive grains 121 themselves, often washing away the abrasive grains 121 and causing damage to the grinding teeth 120. This leads to excessive wear of the grinding teeth 120, affecting the service life of the grinding wheel 100, resulting in frequent replacements of the grinding wheel 100, reducing overall processing efficiency, and increasing processing costs.

[0061] Therefore, this application provides a grinding wheel self-sharpening enhancement device and a grinding wheel self-sharpening enhancement method using the same. The grinding wheel self-sharpening enhancement device can be used in the aforementioned wafer thinning equipment. Figure 7 A schematic diagram of a grinding wheel self-sharpening enhancement device according to one embodiment of this application is shown. It can be disposed at a position outside the wafer W of the grinding wheel 100, preferably downstream of the wafer W along the rotation direction of the grinding wheel 100, for example... Figure 3 The location indicated by the dashed circle A. It can be... Figure 3 The dotted line connecting the center of the wafer W and the grinding wheel 100 is used as the boundary to divide the part of the grinding wheel 100 outside the wafer W into two segments: one segment moving towards the wafer W. Figure 3 The section diagonally above the midpoint of the dashed line is considered to be upstream of wafer W, and the section moving away from wafer W is considered to be downstream of wafer W. In an optional embodiment, the grinding wheel self-sharpening enhancement device is slidably disposed on an arc-shaped track, which is disposed below the grinding wheel 100 and matches the radius of the grinding wheel 100. The grinding wheel self-sharpening enhancement device moves along the arc-shaped track to align with different positions of the grinding wheel 100. For example, when the grinding wheel 100 changes its rotation direction, the grinding wheel self-sharpening enhancement device can be changed to be disposed downstream of wafer W along the rotation direction of the grinding wheel 100, or the position of the grinding wheel self-sharpening enhancement device can be appropriately adjusted based on the actual cleaning and self-sharpening enhancement needs of the grinding wheel 100. In another optional embodiment, grinding wheel self-sharpening enhancement devices can be provided on both sides of the dotted line, so that when the grinding wheel 100 changes the rotation direction, the corresponding grinding wheel self-sharpening enhancement device is activated, that is, the grinding wheel self-sharpening enhancement device located downstream of the wafer W along the rotation direction of the grinding wheel 100 is activated, so as to promptly rinse, cool and restore the self-sharpening properties of the ground teeth 120.

[0062] The grinding wheel self-sharpening enhancement device mainly includes three washers 200 located on the inner side, outer side, and bottom of the grinding wheel 100, respectively. Figure 7Only one grinding tooth 120 is schematically shown, with the inner side of the grinding wheel on the left, the outer side on the right, and the bottom of the grinding wheel at the bottom. Three washers 200 can be positioned at the same circumferential location on the grinding wheel 100, or slightly offset at different circumferential locations. Each washer 200 has a wobbly nozzle 210 for spraying cleaning fluid 211 onto the grinding wheel 100. Through the wobbly nozzle 210, the cleaning fluid 211 sprayed by the washer 200 can reciprocate within the wobbling range to wash the grinding wheel 100, enhancing the vibration of the cleaning fluid 211 on the grinding wheel 100, making it easier for contaminants 124 to loosen and fall off, thus improving the cleaning effect. The nozzle 210 can be configured as a tapered shape that gradually narrows towards the grinding tooth 120 to increase the spray pressure. Additionally, a pressure booster can be installed in the nozzle 210, or a pressure booster can be placed between the nozzle 210 and the cleaning fluid 211 supply source, so that the nozzle 210 sprays pressurized cleaning fluid 211, causing the contaminants 124 on the grinding wheel 100 to be rinsed and loosened, thus enhancing the cleaning effect. More preferably, the rinsing device 200 can also be equipped with an ultrasonic generator 220, which causes the cleaning fluid 211 to generate ultrasonic vibrations to further enhance the rinsing force on the contaminants 124, helping to remove the contaminants 124 from the grinding wheel 100.

[0063] The grinding wheel self-sharpening enhancement device also includes a controller (not shown), which is electrically connected to the three flushers 200 respectively. The controller is used to adjust the opening and closing of the three flushers 200, the spray pressure, the flushing direction, the oscillation frequency, the ultrasonic vibration frequency and other parameters, so as to remove the contaminants 124 on the grinding wheel 100 and enhance the self-sharpening of the grinding wheel 100 while protecting the molars 120 from being washed away.

[0064] In an alternative embodiment, more washers 200 may be provided at different positions on the grinding wheel 100 to enhance the cleaning effect. Alternatively, for reasons such as saving space, depending on the actual amount of contaminants 124, the bottom washer 200, or the inner or outer washers 200, may be omitted.

[0065] Figure 8 A schematic diagram of the flushing of the flusher 200 on the side (inner or outer side) of the grinding wheel 100 is shown; Figure 9 A schematic diagram of the rinsing process of the rinser 200 at the bottom of the grinding wheel 100 is shown. During the formation of the molars 120, due to the bonding process and the properties of the adhesive 123 itself, the abrasive grains 121 are generally more easily cross-linked and bonded laterally, resulting in stronger lateral adhesion and weaker vertical adhesion between the abrasive grains 121. Besides rinsing away contaminants 124, for the grinding wheel 100, Figure 8 The side flusher 200 in the middle usually functions primarily to overcome lateral adhesion and cause lateral loosening of the abrasive grains 121. Figure 9The bottom flusher 200 primarily functions to overcome vertical adhesion and loosen the abrasive grains 121 vertically. Due to the difference between lateral and vertical adhesion forces, it is necessary to adaptively adjust parameters such as the spray pressure, oscillation frequency, and ultrasonic frequency of the side flushers 200 and the bottom flusher 200 to reduce excessive wear on the grinding teeth 120 caused by the abrasive grains 121 being flushed off. Furthermore, during the grinding process, the grinding wheel 100 rotates, causing the surrounding air to move, forming an air layer with velocity and pressure. When the pressurized cleaning fluid 211 sprayed by the inner or outer flushers 200 washes the side of the grinding wheel 100, this air layer creates resistance to the cleaning fluid 211, buffering and dispersing the impact of the cleaning fluid 211 on the grinding wheel 100. Therefore, as the speed of the grinding wheel 100 increases, considering the increased resistance of the air layer to the cleaning fluid 211 due to the increased speed and pressure of the air layer, the spray pressure and oscillation frequency of the flusher 200 can be appropriately increased to break the air layer and achieve effective impact on the grinding wheel 100. However, the rotation of the grinding wheel 100 results in a less pronounced air layer at its bottom, making the buffering and dispersion effect of the air layer on the impact force of the cleaning fluid 211 relatively small when the flusher 200 at the bottom is perpendicular to the bottom surface of the grinding wheel 100. Therefore, under the same parameters such as the speed and pressure of the cleaning fluid 211, the bottom of the grinding wheel 100 is more susceptible to the impact force of the cleaning fluid 211. Therefore, the spray pressure or oscillation frequency of the flusher 200 at the bottom can be appropriately lower than that of the flusher 200 at the side, so that the impact force on the bottom of the grinding wheel 100 is consistent with that on the side, avoiding excessive impact force from the cleaning fluid 211 at the bottom, which could cause the abrasive particles 121 to fall off (e.g., ...). Figure 9 The image shows detached abrasive particles 121 and worn molars 120. Furthermore, when the abrasive particles 121 are in a state of adhesion that makes them difficult to detach, and the contaminants 124 are also in a state of adhesion that makes them difficult to detach, the spray pressure or oscillation frequency of the bottom rinsing device 200 can be appropriately increased to match or even exceed the spray pressure or oscillation frequency of the side rinsing device 200 (the rinsing device 200 at the main rinsing position below), in order to remove stubborn contaminants 124 and achieve a better cleaning effect, thereby improving the self-sharpening property of the grinding wheel 100 while protecting the molars 120.

[0066] In alternative or preferred embodiments, such as Figure 2 and Figure 14As shown, the grinding wheel self-sharpening enhancement device may further include a dresser 300 disposed below the grinding wheel 100. The dresser 300 mainly includes a dresser seat 320 and a dresser head 310. The top of the dresser head 310 is constructed with diamond particles 311 for grinding and dressing the surface of the molar 120, removing contaminants 124 and improving the self-sharpening of the grinding wheel 100. The dresser seat 320 may be disposed on the worktable 31 and configured to be vertically movable so that the dresser head 310 can move downward away from the molar 120 and upward abut against the molar 120. When the cleaning fluid 211 in the rinsing device 200 is sufficient to remove contaminants 124 and improve the self-sharpening properties of the grinding wheel 100, the dressing seat 320 is in a low position to keep the dressing head 310 away from the grinding teeth 120, preventing excessive wear of the grinding teeth 120 by the dressing head 310. When the contaminants 124 are more adhesive and the rinsing device 200 removes them, the dressing seat 320 moves upward to bring the dressing head 310 against the grinding teeth 120, thereby using the diamond particles 311 to remove stubborn contaminants 124. The dresser 300 can be configured to rotate about a vertical axis to perform rotary grinding on the grinding wheel 100.

[0067] Figure 15 A flowchart of a grinding wheel self-sharpening enhancement method according to one embodiment of this application is shown. This method utilizes the aforementioned grinding wheel self-sharpening enhancement and mainly includes:

[0068] Step S1: Determine the main rinsing position: Based on the position of the grinding line L of the grinding wheel 100 grinding the wafer W and the rotation direction of the wafer W, determine whether the grinding wheel 100 is performing external cutting. If so, the main rinsing position is the outer side of the grinding wheel 100; otherwise, the main rinsing position is the inner side of the grinding wheel 100. Figure 4 or Figure 5 The grinding line L typically extends from the center of wafer W to the edge of wafer W to achieve grinding of the entire surface of wafer W during the rotation of wafer W and grinding wheel 100. Figure 4 and Figure 5 Arrows indicate the rotation directions of the wafer W and the grinding wheel 100. Step S1, "determining whether the grinding wheel 100 is performing external cutting based on the position of the grinding line L of the grinding wheel 100 grinding the wafer W and the rotation direction of the wafer W," includes: [e.g.] Figure 4 The portion of wafer W outside the grinding wheel 100 rotates towards the grinding line L, while the portion inside the grinding wheel 100 rotates away from the grinding line L. At this point, the radially outer side of the grinding teeth 120 of the grinding wheel 100 mainly contacts the wafer W for grinding, which can be defined as external cutting edge machining. During grinding, a large amount of debris and contaminants 124 accumulate on the outer side of the grinding wheel 100, resulting in severe passivation of the grinding teeth 120. Figure 5The portion of wafer W outside the grinding wheel 100 rotates away from the grinding line L, while the portion inside the grinding wheel 100 rotates towards the grinding line L. At this point, the radially inner side of the grinding teeth 120 of the grinding wheel 100 mainly contacts the wafer W for grinding, which can be defined as internal cutting. During grinding, a large amount of debris and contaminants 124 accumulate on the inner side of the grinding wheel 100, resulting in severe passivation of the grinding teeth 120. After determining the main rinsing location based on internal or external cutting, step S2 can be performed.

[0069] Step S2: Set the spray pressure, oscillation frequency, and ultrasonic vibration frequency of the rinsing device 200 at the main rinsing location to be greater than those of the rinsing device 200 on the opposite side. For example, if the main rinsing location is the outer side of the grinding wheel 100, then set the spray pressure of the rinsing device 200 on the outer side of the grinding wheel 100 to be greater than that of the rinsing device 200 on the inner side of the grinding wheel 100. Furthermore, the spray volume and oscillation frequency of the rinsing device 200 on the outer side of the grinding wheel 100 can be set to be greater than the corresponding parameters of the rinsing device 200 on the inner side of the grinding wheel 100. To save system energy, the rinsing device 200 on the inner side of the grinding wheel 100 can also be turned off. The flusher 200 at the bottom of the grinding wheel 100 can be set to have the flushing direction tilted toward the main flushing position. The parameters such as the spray pressure and oscillation frequency can be less than or equal to the spray pressure and oscillation frequency of the flusher 200 at the main flushing position, or when the contaminant 124 is difficult to flush away, the parameters can be approximately equal to or appropriately higher than the corresponding flushing parameters of the flusher 200 at the main flushing position.

[0070] The method further includes step S3: determining the rinsing direction of the rinser 200 based on the adhesion state of the abrasive particles 121 forming the grinding wheel 100 and the adhesion state of the contaminants 124 on the grinding wheel 100. This step mainly involves setting whether the rinsing direction of the rinser 200 on the inner, outer, or bottom side of the grinding wheel 100 is in the same or opposite direction as the tangential velocity of the grinding wheel 100, i.e., whether the rinsing direction of the rinser 200 is inclined along or against the rotation direction of the grinding wheel 100. By comparing the (actual) feed speed of the grinding wheel 100 with the set feed speed, and in conjunction with the wear of the grinding wheel 100, it can be determined whether the adhesion state of the abrasive particles 121 and the contaminants 124 is easy or difficult to detach. The wear of the grinding wheel 100 refers to the amount of material loss of the grinding teeth 120 caused by friction between the grinding wheel 100 and the wafer W during grinding. This wear can be calculated by monitoring the height difference between the grinding wheel 100 and the spindle connected to it before and after a grinding process, when the grinding wheel 100 contacts the wafer W. If the adhesion of the abrasive grains 121 in the grinding teeth 120 is low and they are easily detached, the abrasive grains 121 may detach during the rinsing process of the grinding wheel 100 by the rinsing device 200, causing the wear of the grinding wheel 100 to exceed the normal wear range. If the adhesion of the abrasive grains 121 is high and they are not easily detached, and the rinsing process does not cause the abrasive grains 121 to detach, then the wear of the grinding wheel 100 will be within the normal wear range.

[0071] In specific implementation methods, such as Figure 10A schematic diagram (i.e., a bottom view) of the molars 120 and the flusher 200 on the side (inner or outer side) as viewed from the bottom of the grinding wheel 100 is shown. For example, the initial direction of the flusher 200 at the main flushing position can be set so that its component along the tangential direction of the grinding wheel 100 is in the same direction as the tangential velocity of the grinding wheel 100 indicated by the hollow arrow. The spray pressure is gradually increased from the initial value to the maximum value. If the feed speed of the grinding wheel 100 is gradually increased from below the set feed speed to the same as the set feed speed, it indicates that the initial value of the spray pressure was too low at the beginning, and the contaminant 124 could not be flushed sufficiently. The adhesion of the contaminant 124 on the molars 120 hinders the actual feed of the grinding wheel 100, resulting in a feed speed lower than the set feed speed. Subsequently, as the hydraulic pressure increases, the feed rate gradually increases to match the set feed rate, indicating that the contaminant 124 can be fully washed away. If the wear of the grinding wheel 100 exceeds the wear range during this process, it indicates that the detachment of the contaminant 124 is accompanied by the detachment of the abrasive grains 121 themselves. Therefore, the adhesion state of the abrasive grains 121 can be determined as easily detachable. In this case, the component of the rinsing direction along the tangential direction of the grinding wheel 100 can be kept in the same direction as the tangential velocity of the grinding wheel 100. Simultaneously, the hydraulic pressure can be appropriately reduced during the grinding process to appropriately reduce the impact force of the cleaning fluid 211 on the grinding teeth 120, reduce the detachment of the abrasive grains 121, and thus slow down the wear of the grinding wheel 100. Figure 10 As shown by the dotted line, while maintaining the component of the rinsing direction along the tangential direction of the grinding wheel 100 in the same direction as the tangential velocity of the grinding wheel 100, the nozzle 210 of the rinser 200 can also have an oscillation amplitude of 10 to 30 degrees, that is, oscillate within an angle range of, for example, 10 to 30 degrees, to promote the removal of contaminants 124. If the adhesion state of the abrasive particles 121 is determined to be easily detachable, the same rinsing direction can also be used for the rinser 200 at the bottom, such as... Figure 11 A schematic diagram (i.e., side view) of the molar 120 and the rinsing device 200 at the bottom, as seen from the side of the grinding wheel 100, is shown.

[0072] In another scenario, for example, if the initial direction of the flusher 200 at the main flushing location is set so that its component along the tangential direction of the grinding wheel 100 is in the same direction as the tangential velocity of the grinding wheel 100, and the spray pressure is gradually increased from the initial value to the maximum value, if the feed speed of the grinding wheel 100 is always lower than the set feed speed, and the wear of the grinding wheel 100 is within the wear range, it indicates that the contaminant 124 is always in a state of incomplete removal during this process, always hindering the feed of the grinding wheel 100, and the abrasive particles 121 of the grinding wheel 100 have not fallen off (otherwise, they would have fallen off along with the contaminant 124, thus removing the contaminant). Therefore, it can be determined that the adhesion state of the abrasive particles 121 is not easy to detach, and the adhesion state of the contaminant 124 is not easy to detach. In this case, if... Figure 12The rinsing direction of the rinsing device 200 can be changed so that the component of the rinsing direction along the tangential direction of the grinding wheel 100 is opposite to the tangential velocity of the grinding wheel 100, so that the rinsing force is enhanced by the counter-current action of the cleaning fluid 211 and the movement of the grinding wheel 100. For example... Figure 12 As shown by the dotted line, while maintaining the component of the rinsing direction along the tangential direction of the grinding wheel 100 in the opposite direction to the tangential velocity of the grinding wheel 100, the nozzle 210 of the rinser 200 can also have an oscillation amplitude of 10 to 30 degrees, that is, oscillate within an angle range of, for example, 10 to 30 degrees, to promote the removal of contaminants 124. When the adhesion state of the abrasive particles 121 is not easily removed and the adhesion state of the contaminants 124 is not easily removed, the same rinsing direction can also be used for the rinser 200 at the bottom, such as... Figure 13 A schematic diagram of the molar 120 and the rinsing device 200 at the bottom, as viewed from the side of the grinding wheel 100, is shown.

[0073] In an alternative embodiment, when the rinsing device 200 is set such that the component of the rinsing direction along the tangential direction of the grinding wheel 100 is opposite to the tangential velocity of the grinding wheel 100, the spray pressure is gradually increased from the initial value to the maximum value. If the feed speed of the grinding wheel 100 is always lower than the set feed speed and the wear of the grinding wheel 100 is within the wear range, it indicates that the contaminant 124 is too stubborn and the rinsing device 200 can no longer remove the contaminant 124 and improve the self-sharpening of the grinding wheel 100. At this time, the dressing device 300 with diamond particles 311 on the top can be pressed against the bottom of the grinding wheel 100 to grind and dress the molars 120.

[0074] In an alternative embodiment, the operation of gradually increasing the spray pressure from an initial value to a maximum value can be replaced by gradually increasing the oscillation frequency from an initial value to a maximum value to determine the adhesion state of the abrasive particles 121 or contaminants 124. Furthermore, the initial selection and determination process of the above-mentioned rinsing direction is performed using the rinser 200 at the main rinsing location; in an optional embodiment, other rinsers 200 may also be used.

[0075] Furthermore, the method may also include step S4: adjusting the spray pressure and oscillation frequency of the flusher 200 based on the ratio of the feed speed of the grinding wheel 100 to the set feed speed during the grinding process. Specifically, when the ratio of the feed speed of the grinding wheel 100 to the set feed speed is lower than the set range, it indicates that the contaminant 124 is obstructing the feed of the grinding wheel 100, and the spray pressure and / or oscillation frequency of the flusher 200 need to be increased to enhance the flushing of the contaminant 124. Conversely, when it exceeds the set range, the spray pressure and / or oscillation frequency of the flusher 200 are reduced. The set range can be from 0.9 to 1.1. In addition, a speed alarm value can be set, for example, a value between 1.1 and 1.3. When the ratio of the feed speed to the set feed speed exceeds the speed alarm value, an alarm signal is issued to indicate that the flushing pressure and / or oscillation frequency settings are abnormal.

[0076] In embodiments with additional or alternative steps S4, the method may further include the following steps: adjusting the spray pressure and oscillation frequency of the flusher 200 based on the ratio of the processing current of the motor driving the grinding wheel 100 in the latter time period to the former time period in two consecutive time periods. Specifically, when the ratio of the processing current in two consecutive time periods exceeds a reference range, it indicates that the contaminant 124 adhesion is hindering the feed of the grinding wheel 100, requiring an increase in spray pressure and / or oscillation frequency; when the ratio of the processing current in two consecutive time periods is lower than the reference range, it indicates that flushing has caused more wear on the grinding wheel 100, requiring a decrease in spray pressure and / or oscillation frequency. The lower limit of the reference range can be set to 1. In addition, the grinding wheel 100 reaches a normal processing state approximately 3 seconds after the grinding begins, so a reference point can be collected. The upper limit can be set as the ratio of the maximum current of the motor driving the grinding wheel 100 to the instantaneous current during the 3-second grinding period. In addition, a current alarm value can be set, such as the upper limit of the aforementioned reference range. When the ratio of the processing current in two consecutive time periods exceeds the current alarm value, an alarm signal is issued to indicate that the spray pressure and oscillation frequency settings are abnormal.

[0077] In an alternative embodiment, considering the presence of the air layer around the aforementioned grinding wheel 100, the method may further include increasing the spray pressure and oscillation frequency of the inner, outer, and bottom washers 200 as the rotational speed of the grinding wheel 100 increases. Considering the difference in the air layers on the sides and bottom, the increase in the spray pressure and oscillation frequency of the inner and outer washers 200 may be greater than the increase in the spray pressure and oscillation frequency of the bottom washer 200. This is to improve the self-sharpening property of the grinding wheel through washing while minimizing the shedding of abrasive particles caused by washing, thus ensuring the lifespan of the grinding wheel.

[0078] Furthermore, since increasing parameters such as spray pressure, oscillation frequency, spray volume, spray speed, and ultrasonic vibration frequency all enhance the impact force of the cleaning fluid 211 on the molars 120, the aforementioned methods for adjusting spray pressure or oscillation frequency also apply to adjusting parameters such as spray volume, spray speed, and ultrasonic vibration frequency. Conversely, reducing the oscillation amplitude of the nozzle 210 causes the cleaning fluid 211 to oscillate within a reduced range, allowing it to act more concentratedly on the molars 120. Therefore, the method for adjusting the oscillation amplitude is the opposite of the aforementioned methods for adjusting spray pressure or oscillation frequency; that is, the oscillation amplitude is reduced when increased impact force is needed, and increased when decreased impact force is needed. Additionally, the adjustment methods for the flushing parameters of the flusher 200 described above are consistent for any flusher 200 (whether to increase or decrease), only the adjustment range may differ. Therefore, it is not specifically specified whether the flusher 200 is on the inner, outer, or bottom side.

[0079] It should be understood that the sequence of steps in the above-mentioned method for enhancing the self-sharpening properties of grinding wheels is merely exemplary. Depending on actual control or operation needs or equipment monitoring display, the execution order of each step can be appropriately adjusted, or one or more of the above steps can be executed alternately or repeatedly.

[0080] This application also provides a computer storage medium storing a computer program that, when executed by a processor, implements the aforementioned method for enhancing the self-sharpening properties of grinding wheels.

[0081] According to the technical solution of this application, especially for wafers made of composite materials, the adhesion characteristics of the abrasive grains 121 of the grinding wheel 100 and the complexity and adhesion characteristics of the contaminants 124 are fully considered. In order to improve the self-sharpening property of the grinding wheel 100 while avoiding excessive wear of the grinding wheel 100, the main rinsing properties of the rinser 200 are determined by studying the correlation between the main processing positions of the grinding wheel 100 and the changing trends of processing parameters such as processing current and feed rate, and the main adhesion positions of the contaminants 124, the adhesion characteristics of the abrasive grains 121 and the contaminants 124. The setting and adjustment of parameters such as position, rinsing direction, spray pressure and oscillation frequency, as well as the coordination between the side rinser 200 and the bottom rinser 200, effectively improve the self-sharpening property of the grinding wheel 100 while performing targeted rinsing of the grinding wheel 100 at different positions and angles. This provides effective protection for the grinding teeth 120, avoids damage to the grinding teeth 120 during rinsing, ensures the service life of the grinding wheel 100, reduces the replacement frequency of the grinding wheel 100, and improves the grinding and thinning effect and grinding efficiency of the grinding wheel 100.

[0082] The above embodiments are only used to illustrate the embodiments of this application, and are not intended to limit the embodiments of this application. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the embodiments of this application. Therefore, all equivalent technical solutions also fall within the scope of the embodiments of this application, and the patent protection scope of the embodiments of this application should be defined by the claims.

Claims

1. A method for enhancing the self-sharpening property of a grinding wheel, wherein the grinding wheel is used to grind a wafer in a wafer thinning apparatus, characterized in that, The grinding wheel's grinding line extends from the wafer's center to its edge. The inner, outer, and bottom sides of the grinding wheel are equipped with rinsing devices for spraying cleaning fluid onto the grinding wheel. The method includes: Determine the main rinsing position: Based on the position of the grinding line and the rotation direction of the wafer, determine whether the grinding wheel is for external cutting. If so, the main rinsing position is the outside of the grinding wheel; otherwise, the main rinsing position is the inside of the grinding wheel. Specifically, when the rotation direction of the part of the wafer outside the grinding wheel is towards the grinding line, it is determined to be external cutting; when the rotation direction of the part of the wafer outside the grinding wheel is away from the grinding line, it is determined to be internal cutting. Set the spray pressure and oscillation frequency of the flusher at the main flushing position to be greater than those of the flusher on the opposite side. The flushing direction of the flusher is determined based on the adhesion state of the abrasive particles forming the grinding wheel and the adhesion state of contaminants on the grinding wheel. This includes: setting the initial direction of the flusher so that its component along the tangential direction of the grinding wheel is in the same direction as the tangential velocity of the grinding wheel; gradually increasing the spray pressure or oscillation frequency from the initial value to the maximum value; if the feed speed of the grinding wheel gradually increases from below the set feed speed to be consistent with the set feed speed and the wear of the grinding wheel exceeds the wear range, then the adhesion state of the abrasive particles is determined to be easy to detach, and the component of the flushing direction along the tangential direction of the grinding wheel is kept in the same direction as the tangential velocity of the grinding wheel; if the feed speed of the grinding wheel is always below the set feed speed and the wear is within the wear range, then the adhesion state of both the abrasive particles and the adhesion state of the contaminants are determined to be difficult to detach, and the component of the flushing direction along the tangential direction of the grinding wheel is set to be opposite to the tangential velocity of the grinding wheel. The spray pressure and oscillation frequency of the flushing device are adjusted based on the ratio of the processing current of the motor driving the grinding wheel in two consecutive time periods.

2. The method for enhancing the self-sharpening property of a grinding wheel as described in claim 1, characterized in that, "Adjusting the spray pressure and oscillation frequency of the flusher based on the ratio of the processing current of the motor driving the grinding wheel in two consecutive time periods" includes: increasing the spray pressure and oscillation frequency when the ratio of the processing current in two consecutive time periods exceeds a reference range; and decreasing the spray pressure and oscillation frequency when the ratio of the processing current in two consecutive time periods is lower than a reference range. The lower limit of the reference range is 1, and the upper limit is the ratio of the maximum current of the motor driving the grinding wheel to the instantaneous current during 3 seconds of grinding.

3. The method for enhancing the self-sharpening property of a grinding wheel as described in claim 1, characterized in that, The adjustment of the oscillation amplitude of the flushing nozzle is the opposite of the adjustment of the spray pressure or oscillation frequency. When it is necessary to increase the impact force, the oscillation amplitude is reduced, and when it is necessary to reduce the impact force, the oscillation amplitude is increased.

4. The method for enhancing the self-sharpening property of a grinding wheel as described in claim 1, characterized in that, The method further includes: increasing the spray pressure and oscillation frequency of the inner, outer, and bottom flushers as the rotation speed of the grinding wheel increases, so as to reduce the dispersion effect of the surrounding air layer on the cleaning fluid caused by the rotation of the grinding wheel, and the increase in spray pressure and oscillation frequency of the inner and outer flushers is greater than the increase in spray pressure and oscillation frequency of the bottom flusher.

5. The method for enhancing the self-sharpening property of a grinding wheel as described in claim 1, characterized in that, The bottom flusher is set to flush at an angle towards the main flushing location.

6. The method for enhancing the self-sharpening property of a grinding wheel as described in claim 5, characterized in that, The method further includes increasing the spray pressure and oscillation frequency of the bottom flusher when the abrasive particles are in an adhesion state that is not easy to detach and the contaminants are in an adhesion state that is not easy to detach.

7. The method for enhancing the self-sharpening property of a grinding wheel as described in claim 1, characterized in that, The method further includes: when the rinsing device is set such that the component of its rinsing direction along the tangential direction of the grinding wheel is opposite to the tangential velocity of the grinding wheel, the spray pressure is gradually increased from the initial value to the maximum value; if the feed speed of the grinding wheel is always lower than the set feed speed and the wear of the grinding wheel is within the wear range, then a dresser with diamond particles on the top is pressed against the bottom of the grinding wheel for grinding and dressing.

8. The method for enhancing the self-sharpening property of a grinding wheel as described in claim 1, characterized in that, The flushing device is equipped with an ultrasonic generator, which causes the cleaning fluid to vibrate ultrasonically.

9. The method for enhancing the self-sharpening property of a grinding wheel as described in any one of claims 1-8, characterized in that, Two sets of rinsers are provided on both sides of the center line connecting the wafer and the grinding wheel. Each set of rinsers includes rinsers located on the inner side, outer side and bottom of the grinding wheel. The method further includes: according to the rotation direction of the grinding wheel, activating a set of rinsers located downstream of the wafer along the rotation direction of the grinding wheel.

10. A grinding wheel self-sharpening enhancement device, used to perform the grinding wheel self-sharpening enhancement method as described in any one of claims 1-9, characterized in that, include: Three flushers are located on the inner, outer, and bottom sides of the grinding wheel, respectively. Each flusher has a wobbly nozzle to wobbly spray cleaning fluid onto the grinding wheel. The controller is electrically connected to each of the three flushers and is used to regulate one or more parameters of the three flushers, including opening and closing, spray pressure, flushing direction, oscillation frequency, and oscillation amplitude.

11. The grinding wheel self-sharpening enhancement device as described in claim 10, characterized in that, The rinsing device also includes an ultrasonic generator that causes the cleaning fluid to vibrate ultrasonically to help remove contaminants from the grinding wheel.

12. A wafer thinning apparatus, characterized in that, include: A support stage is used to hold the wafer and rotate it. A grinding apparatus, including a grinding wheel for grinding the wafer; The grinding wheel self-sharpening enhancement device as described in claim 10 or 11.

13. The wafer thinning apparatus as described in claim 12, characterized in that, include: The grinding wheel self-sharpening enhancement device is slidably mounted on an arc-shaped track located below the grinding wheel and matching its radius. The grinding wheel self-sharpening enhancement device moves along the arc-shaped track to align with different positions on the grinding wheel.

14. A computer storage medium, characterized in that, The computer storage medium stores a computer program, which, when executed by a processor, implements the grinding wheel self-sharpening enhancement method as described in any one of claims 1-9.

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