碳化硅KGD测试座及测试方法
By designing the planar probe and elastic element of the silicon carbide KGD test socket, the problems of high-temperature softening and adhesion during high-current testing are solved, achieving low-cost and high-efficiency test protection, which is suitable for dynamic testing of SiC MOSFETs, Si MOSFETs and IGBTs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- POWERTECH CO LTD
- Filing Date
- 2025-10-23
- Publication Date
- 2026-07-17
AI Technical Summary
Existing silicon carbide KGD test sockets are prone to localized high-temperature softening or melting during high-current testing, leading to adhesion and physical damage, and also have high testing costs and short lifespan.
A planar probe is used to form a surface contact with the drain electrode of the KGD under test. Combined with the elastic element design, the maximum current is controlled and the energy rise phenomenon is improved, the metal melting and adhesion are reduced, and the high temperature resistance and service life are improved.
It effectively reduces testing costs, extends the lifespan of the test socket, reduces physical damage to KGD chips, and meets the needs of high-requirement product reliability screening and mass production.
Smart Images
Figure CN121091045B_ABST