半导体测温装置

By setting temperature sensing components and capacitor structures between wafers, the problems of contamination and interference in wafer temperature detection devices are solved, achieving higher temperature measurement accuracy and equipment stability.

CN121096906BActive Publication Date: 2026-07-17SHENZHEN PENGXIN MICRO INTEGRATED CIRCUIT MFG CO LTD +1

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHENZHEN PENGXIN MICRO INTEGRATED CIRCUIT MFG CO LTD
Filing Date
2025-04-01
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing wafer temperature detection devices suffer from problems such as contamination introduced by wired measurement devices and susceptibility to electrical interference in wireless devices, which affect the accuracy of temperature measurement and the stability of the equipment.

Method used

The temperature sensing assembly between the first and second wafers, which are stacked, includes a temperature sensing device, a power supply, a main controller, and a capacitor structure, which are coupled through interconnect circuits. The capacitor structure is used to contain plasma, charge, and spike current to reduce interference.

Benefits of technology

It improves the anti-interference capability of the temperature measuring device, reduces signal transmission instability and the risk of device damage, and enhances the accuracy of temperature measurement and the stability of the equipment.

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Abstract

本公开实施例公开了一种半导体测温装置,包括:堆叠设置的第一晶圆以及第二晶圆;测温组件,至少部分位于所述第一晶圆与所述第二晶圆之间;所述测温组件包括通过互连电路耦接的测温器件、电源以及主控;电容结构,至少部分位于所述第一晶圆与所述第二晶圆之间;所述电容结构包括第一电极、第二电极以及电介质层,所述电介质层位于所述第一电极与所述第二电极之间;所述第一电极与所述第一晶圆耦接,所述第二电极与所述第二晶圆耦接。
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