半导体结构及其制造方法
By nitriding the residual portion and forming an insulating portion, the problem of adjacent gate structure connection in the gate isolation process is solved, improving the performance and isolation effect of the integrated circuit and achieving more efficient gate isolation.
CN121099647BActive Publication Date: 2026-07-17SHENZHEN PENGXIN MICRO INTEGRATED CIRCUIT MFG CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHENZHEN PENGXIN MICRO INTEGRATED CIRCUIT MFG CO LTD
- Filing Date
- 2025-02-27
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In existing gate isolation processes, the presence of residual portions leads to the connection of adjacent gate structures, affecting the performance and independent control of integrated circuits.
Method used
By nitriding the residual portion to transform it into an insulating portion, and removing the untransformed portion before forming the gate structure, an isolation portion is formed to isolate the gate structure. The transformation effect is improved by using plasma nitriding process and rapid thermal treatment.
Benefits of technology
It effectively reduces the possibility of connections between gate structures, improves the performance and isolation effect of integrated circuits, and enhances the stability and independent control capability of circuits.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN121099647B_ABST
Abstract
本公开涉及半导体技术领域，尤其涉及一种半导体结构及其制造方法，方法包括：提供衬底结构，衬底结构包括：衬底，多个鳍片，多个鳍片包括第一鳍片和第二鳍片，隔离区，伪栅，以及掩模层，位于伪栅上并且具有开口；利用掩模层对伪栅执行截断工艺，去除伪栅的一部分，以得到第一伪栅、第二伪栅、以及伪栅的残余部，开口使得残余部的表面露出；对残余部的表面执行处理，以使得残余部的至少部分转变为绝缘部；在处理之后，在伪栅的一部分被去除之后的第一空间中形成隔离部；去除第一伪栅、第二伪栅以及残余部未被转变为绝缘部的部分，以形成第二空间；以及在第二空间中形成栅极结构，栅极结构包括第一栅极、以及第二栅极。
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