Preparation of oxide thin film transistor array based on hydrophilic and hydrophobic patterning and physiological electrical signal monitoring method

Abstract

The application discloses a kind of oxide thin film transistor array preparation and physiological electrical signal monitoring method based on hydrophilic and hydrophobic patterning, belong to semiconductor material and device and biosensing field, the method includes the following steps: using patterning self-assembled monolayer technology, form the pattern with hydrophilic region and hydrophobic region on substrate surface;Surface energy difference is used to hydrophilic region and hydrophobic region, by spin coating oxide semiconductor precursor solution, so that precursor solution selectively infiltrates hydrophilic region, after pre-annealing and annealing treatment, obtain patterned oxide semiconductor thin film;Vacuum evaporation method is used to deposit metal electrode on patterned oxide semiconductor thin film, form thin film transistor array;The thin film transistor array is used as preamplifier, by connecting physiological electrical signal potential difference to transistor gate, real-time modulation channel conductance, realize the synchronous monitoring of multichannel physiological electrical signal.

Description

Technical Field

[0001] This invention belongs to the fields of semiconductor materials and devices and biosensing technology, and particularly relates to a method for fabricating and monitoring physiological electrical signals based on hydrophilic and hydrophobic patterned oxide thin-film transistor arrays. Background Technology

[0002] In the complex physiological signal system of the human body, electrical signals are closely related to numerous physiological functions, ranging from higher cognitive activities to basal metabolic processes. The activity of organs, tissues, and neurons is accompanied by changes in electrical potential. This unique electrophysiological phenomenon provides an important biophysical basis for health monitoring in modern medicine. For example, electrocardiogram (ECG) signals directly reflect the electrical conduction process of the myocardium and are an important indicator for assessing cardiovascular function; their dynamic monitoring can effectively predict arrhythmias. Electrooculogram (EOG) signals originate from the potential difference between the cornea and retina. Monitoring this unique electrophysiological characteristic provides a reliable pathway for eye movement tracking and retinal stimulation feedback, promoting the development of mobile eye therapy and eye movement control technologies. Physiological electrical signals typically have weak amplitudes and varying frequency coverage ranges; for example, the amplitude range of ECG is approximately 1-5 mV, and that of EOG is approximately 10-100 μV. To ensure the accuracy of signal acquisition, traditional physiological electrical signal acquisition systems, in addition to sensing electrodes, usually include an analog front-end consisting of a preamplifier, bandpass filter, rectifier, and analog-to-digital converter (ADC), as well as a signal post-processing module. Taking electromyography (EMG) signal acquisition for prosthetic control as an example, to achieve human-computer interaction applications, the EMG signal needs to be amplified by at least three orders of magnitude to meet the input voltage range requirements of commercial ADCs. Therefore, complex signal processing circuits often result in a large weight and size of the signal acquisition system, along with high power consumption. Furthermore, environmental noise and crosstalk between electronic components can significantly reduce the signal-to-noise ratio, and may even obscure critical signal information. For instance, patent CN201810143196 discloses a signal enhancement circuit for an electrocardiograph (ECG). This circuit includes an anti-interference circuit, a differential adjustment circuit, and a feedback enhancement circuit. The potential signal transmitted from the ECG leads is conditioned by these circuits and then outputs an enhanced signal, allowing the ECG to display the state of the human heart more clearly and accurately. However, this solution still suffers from the limitations of traditional electrical signal acquisition systems: 1. It still involves complex amplification circuit design; 2. The circuit design relies on traditional ECG monitoring equipment, resulting in insufficient applicability.

[0003] Besides traditional physiological electrical signal acquisition circuits and systems, thanks to the in-situ signal amplification function of thin-film transistors (TFTs), many studies have attempted to develop TFTs (such as organic electrochemical transistors) and apply them to the amplification and monitoring of physiological electrical signals on the body surface. For example, patent CN202410634074 discloses a flexible organic electrochemical transistor sensor for ECG signal detection and its fabrication method, detailing the fabrication process of the organic electrochemical transistor and proposing that the current change in the conductive polymer layer can be obtained through the current difference between the drain and source electrodes, providing data support for the real-time detection of ECG signals. However, this patent has the following drawbacks: 1. It uses multi-step photolithography and other methods, making the fabrication process complex; 2. It only involves a single-channel ECG signal monitoring sensor; 3. It lacks specific testing methods and demonstrations of ECG monitoring effects.

[0004] To address the issues of complexity and high power consumption in traditional physiological electrochemical signal acquisition systems, and the complex fabrication process and single-channel nature of organic electrochemical transistors, this invention proposes a preamplifier array for physiological electrochemical signal monitoring that is easy to fabricate, convenient to operate, low-voltage, and multi-channel. Summary of the Invention

[0005] To address the aforementioned technical problems, this invention proposes a method for fabricating and monitoring physiological electrical signals of an oxide thin-film transistor array based on hydrophilic and hydrophobic patterning, thereby resolving the issues present in the prior art.

[0006] To achieve the above objectives, the present invention provides a method for fabricating and monitoring physiological electrical signals of an oxide thin-film transistor array based on hydrophilic and hydrophobic patterning, comprising:

[0007] Patterned self-assembly monolayer technology is used to form patterns with hydrophilic and hydrophobic regions on the substrate surface;

[0008] By utilizing the surface energy difference between hydrophilic and hydrophobic regions, an oxide semiconductor precursor solution is spin-coated to selectively wet the hydrophilic regions. After pre-annealing and annealing, a patterned oxide semiconductor thin film is obtained.

[0009] Metal electrodes are deposited on patterned oxide semiconductor thin films using a vacuum evaporation method to form a thin-film transistor array.

[0010] Using the thin-film transistor array as a preamplifier, the channel conductance is modulated in real time by connecting the potential difference of the physiological electrical signal in series to the transistor gate, thereby realizing the synchronous monitoring of multi-channel physiological electrical signals.

[0011] Optionally, the process of forming a pattern with hydrophilic and hydrophobic regions on the substrate surface includes:

[0012] Hydrophilic and hydrophobic patterning of the substrate surface was achieved by silane treatment. The cleaned Si / SiO2 substrate was modified by self-assembly of a monolayer based on an n-octylchlorosilane-n-hexane solution to obtain a hydrophobic substrate.

[0013] The hydrophobic substrate is selectively treated with ultraviolet ozone under a mask. The masked area retains its hydrophobicity, while the uncovered area becomes hydrophilic after the monolayer is removed by ultraviolet ozone, thus generating a pattern with both hydrophilic and hydrophobic regions.

[0014] Optionally, the process of obtaining a patterned oxide semiconductor thin film includes:

[0015] Indium gallium zinc oxide semiconductor precursor solution was prepared by sol-gel method. The precursor solution was applied to the surface of hydrophilic and hydrophobic patterned substrate by spin coating process. The surface energy difference between hydrophilic and hydrophobic regions was used to induce selective spreading and confined wetting of the solution, so that the precursor solution only adhered to the hydrophilic region, and the spin-coated substrate was obtained.

[0016] The spin-coated substrate was treated using a stepped temperature annealing process, first pre-annealing at 100–110℃ and then high-temperature annealing at 300–400℃ to obtain a patterned oxide semiconductor thin film.

[0017] Optionally, the process for preparing the indium gallium zinc oxide semiconductor precursor solution includes:

[0018] Indium nitrate hydrate, gallium nitrate hydrate, and zinc nitrate hydrate were dissolved in 2-methoxyethanol at a concentration of 0.1 mol / L, and stirred at 800-1000 rpm for 2-3 hours at 50-60℃ to obtain indium nitrate solution, gallium nitrate solution, and zinc nitrate solution, respectively.

[0019] The indium nitrate solution, gallium nitrate solution, and zinc nitrate solution were mixed in a molar ratio of 7:1:2 and stirred at 800-1000 rpm for 10-12 hours at room temperature to obtain a uniform and stable indium gallium zinc oxide precursor solution.

[0020] Optionally, the process of forming a thin-film transistor array includes:

[0021] A metal mask is used to cover a patterned oxide semiconductor thin film. Aluminum electrodes are deposited patterned at both ends of the semiconductor channel region using a vacuum thermal evaporation process to form the source and drain of the transistor, thus completing the fabrication of the thin film transistor array. The channel length and width are controlled to be 100 μm and 1000 μm, respectively.

[0022] Optionally, the process of synchronous monitoring of multi-channel physiological electrical signals includes:

[0023] Physiological electrical signals are acquired using gel electrodes;

[0024] The obtained potential difference signal is then input to the gate of the corresponding transistor in the transistor array based on the physiological electrical signal.

[0025] A bias voltage of 0.1-1V is applied to the source and gate respectively, and the real-time changes in physiological electrical signals are reflected by monitoring the changes in source and drain current.

[0026] By synchronously recording the output signals of each transistor in the array through a multi-channel data acquisition system, the simultaneous acquisition and monitoring of multiple physiological electrical signals can be achieved.

[0027] The present invention also provides a computer, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the method described thereon.

[0028] The present invention also provides a storage medium having a computer program stored thereon, which, when executed by a processor, implements the method described thereon.

[0029] Compared with the prior art, the present invention has the following advantages and technical effects:

[0030] The method for fabricating and monitoring physiological electrical signals based on hydrophilic-hydrophobic patterned oxide thin-film transistor arrays provided by this invention has significant technical advantages. This method utilizes patterned self-assembly monolayer technology to achieve fine mapping of hydrophilic and hydrophobic regions on the substrate surface. By inducing selective wetting of hydrophilic regions by an oxide precursor solution through surface energy differences, high-performance, highly uniform patterned indium gallium zinc oxide semiconductor thin films and transistor arrays are successfully fabricated. As a preamplifier, this array requires only a low operating voltage of 0.1-1V to achieve high-gain in-situ amplification of weak physiological electrical signals such as electrocardiograms and electrooculograms, greatly reducing system power consumption. The spatially isolated patterned structure effectively avoids crosstalk problems during multi-channel signal acquisition, simplifies traditional complex signal conditioning circuits, and achieves high signal-to-noise ratio and synchronous monitoring of multiple physiological parameters, providing a low-cost, high-efficiency solution for wearable health monitoring devices. Attached Figure Description

[0031] The accompanying drawings, which form part of this application, are used to provide a further understanding of this application. The illustrative embodiments and descriptions of this application are used to explain this application and do not constitute an undue limitation of this application. In the drawings:

[0032] Figure 1 This is a schematic diagram of the substrate hydrophilic / hydrophobic patterning process according to an embodiment of the present invention;

[0033] Figure 2 This is a schematic diagram of the transistor array fabrication process according to an embodiment of the present invention;

[0034] Figure 3 This is a schematic diagram of a single thin-film transistor device structure according to an embodiment of the present invention;

[0035] Figure 4 A photograph of a patterned oxide thin film according to an embodiment of the present invention;

[0036] Figure 5 This is a diagram of a thin-film transistor device array according to an embodiment of the present invention;

[0037] Figure 6 The transfer characteristic curve of the IGZO transistor in an embodiment of the present invention;

[0038] Figure 7 The output characteristic curve of the IGZO transistor in an embodiment of the present invention;

[0039] Figure 8 This is a circuit diagram and gain curve of an IGZO thin-film transistor inverter according to an embodiment of the present invention;

[0040] Figure 9 The above is a comparative IZO transistor transfer characteristic curve in an embodiment of the present invention;

[0041] Figure 10 The output characteristic curve of the comparative IZO transistor in this embodiment of the invention;

[0042] Figure 11 This is a circuit diagram and gain curve of a comparative IZO thin-film transistor inverter in an embodiment of the present invention;

[0043] Figure 12 This is a schematic diagram illustrating ECG and EOG multi-physiological electrical signal monitoring using an IGZO transistor array according to an embodiment of the present invention. Detailed Implementation

[0044] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0045] It should be noted that the steps shown in the flowchart in the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and although a logical order is shown in the flowchart, in some cases the steps shown or described may be executed in a different order than that shown here.

[0046] Example 1

[0047] Physiological electrical signals such as electrocardiogram (ECG), electromyography (EMG), electrooculography (EOG), and electroencephalography (EEG) are typically characterized by weak amplitude and varying frequency coverage. Furthermore, they are highly susceptible to interference from environmental noise and baseline drift during signal acquisition. Therefore, to effectively suppress these interferences and ensure the resolution of the sensor signals, human physiological electrical signal sensing systems must possess characteristics such as high gain, low noise, and high input impedance. Traditional physiological electrical signal acquisition systems typically consist of sensing electrodes, an analog front-end composed of a preamplifier, bandpass filter, rectifier, and analog-to-digital converter (ADC), as well as a signal post-processing module. These systems are often bulky, causing significant inconvenience in daily use. In addition, environmental noise and crosstalk between electronic components can significantly reduce the signal-to-noise ratio and may even obscure critical signal information.

[0048] This invention proposes a method for fabricating and monitoring physiological electrical signals based on hydrophilic-repellent patterned oxide thin-film transistor arrays. The method involves designing a transistor array using indium gallium zinc oxide semiconductor (IGS) as the channel material and using this array as a preamplifier to monitor and acquire multiple physiological electrical signals, such as electrooculography (EOG) and electrocardiography (ECG). The proposed multi-channel physiological electrical signal monitoring array uses solution-based IGS transistors as preamplifiers to amplify and acquire weak physiological electrical signals (such as ECG and EOG) from the body surface in situ. This simplifies the circuitry of traditional physiological electrical signal acquisition systems, reduces power consumption, and greatly avoids the influence of environmental noise and crosstalk from electronic components, thereby achieving synchronous, efficient amplification and accurate monitoring of multi-channel physiological electrical signals.

[0049] To address the shortcomings of the existing technologies, this invention uses sol-gel metal oxide semiconductors as the channel material for thin-film transistors. By inducing the selective wetting of hydrophilic regions by patterned self-assembled monolayers to form hydrophilic / hydrophobic surfaces, the oxide precursor solution is used to pattern the oxide semiconductor thin film, thereby realizing an oxide thin-film transistor array. This device array is then used as a multi-channel preamplifier array for synchronous amplification and acquisition of multiple physiological electrical signals such as electrocardiograms and electrooculograms in complex human environments.

[0050] Compared to the complexity, large size, heavy weight, and high cost of traditional physiological electrochemical signal acquisition systems, as well as the complex fabrication process of organic electrochemical transistor preamplifiers, the preamplifier array proposed in this invention has advantages such as low cost, simple fabrication, and simple operation (simply connect each physiological potential signal in series with the transistor gate, and synchronously acquire the source and drain current signals to reflect the real-time changes of physiological electrochemical signals). It greatly simplifies the complex amplification circuits involved in current physiological electrochemical signal acquisition systems, optimizes the structure of the testing equipment, avoids signal crosstalk between devices, and realizes synchronous amplification and low-power acquisition of multi-channel physiological electrochemical signals.

[0051] like Figure 1 As shown, this embodiment provides a method for fabricating and monitoring physiological electrical signals based on hydrophilic and hydrophobic patterned oxide thin-film transistor arrays, including the following steps:

[0052] By utilizing the surface energy difference between hydrophilic and hydrophobic regions, an oxide semiconductor precursor solution is spin-coated to selectively wet the hydrophilic regions. After pre-annealing and annealing, a patterned oxide semiconductor thin film is obtained. Metal electrodes are deposited on the patterned oxide semiconductor thin film using vacuum evaporation to form a thin-film transistor array. The thin-film transistor array is used as a preamplifier, and the channel conductance is modulated in real time by connecting the potential difference of physiological electrical signals in series to the transistor gate, thereby realizing synchronous monitoring of multi-channel physiological electrical signals.

[0053] Furthermore, this includes: 1. Achieving hydrophilic / hydrophobic patterning of the substrate surface through patterned self-assembled monolayers, such as... Figure 1 As shown; 2. Patterned fabrication of oxide semiconductor thin films is achieved by utilizing the surface energy difference between hydrophilic and hydrophobic regions, thereby realizing thin-film transistor device arrays, such as... Figure 2 As shown; 3. Analyze the performance and voltage gain of the patterned thin-film transistor device through electrical characterization methods such as transfer characteristic curves and output characteristic curves, as well as by constructing a current source inverter; 4. Use the transistor array as a multi-channel preamplifier to acquire multiple physiological electrical signals such as ECG and EOG, and construct a multi-channel physiological electrical signal detection scheme.

[0054] As a specific implementation method of this embodiment, the specific implementation process of the technical solution of the present invention includes:

[0055] 1. Solution preparation: (1) Preparation of n-octylchlorosilane (OTS) solution: Dissolve OTS in n-hexane at a concentration of 0.08-0.12 mol / L to prepare n-octylchlorosilane-n-hexane solution.

[0056] (2) Preparation of oxide semiconductor precursor solution: Indium nitrate hydrate In(NO3)3·xH2O, gallium nitrate hydrate Ga(NO3)3·xH2O and zinc nitrate hydrate Zn(NO3)2·xH2O were dissolved in 2-methoxyethanol at a concentration of 0.1 mol / L, and then stirred at 800-1000 rpm for 2-3 hours at 50-60 degrees Celsius to obtain three different nitrate 2-methoxyethanol solutions; then, the precursor solution of oxide semiconductor thin film was prepared by mixing the different nitrate solutions according to a certain composition and proportion. a) Example: Indium gallium zinc oxide (IGZO) precursor solution: Indium nitrate solution, gallium nitrate solution and zinc nitrate solution were mixed in a ratio of 7:1:2 and stirred at 800-1000 rpm for 10-12 hours at room temperature before use; b) Comparative example: Indium zinc oxide (IZO) precursor solution: Indium nitrate solution and zinc nitrate solution were mixed in a ratio of 1:1 and stirred at 800-1000 rpm for 10-12 hours at room temperature before use.

[0057] 2. Substrate Cleaning: The substrate used in this method is p-type heavily doped Si / SiO2, with a SiO2 thickness of 300 nm. A piranha-like etching solution is prepared by mixing 98% concentrated sulfuric acid and 30% hydrogen peroxide at a volume ratio of 3:1 to 7:1. The Si / SiO2 wafer is immersed in the etching solution, heated at 70–90°C for 15–20 minutes, then removed and ultrasonically cleaned 3–5 times with deionized water, and finally dried with compressed air.

[0058] 3. Preparation of OTS-SAM hydrophobic substrate: The cleaned Si / SiO2 substrate is placed in the n-octylchlorosilane-n-hexane solution prepared in step 1 (1), heated at 50-60°C for 20-30 min, and then removed. After ultrasonic cleaning with n-hexane, acetone and isopropanol for 3-5 min in sequence to remove unbound molecules, the substrate is dried with compressed air to form a hydrophobic n-octylchlorosilane-self-assembled monolayer (OTS-SAM) on the substrate surface.

[0059] 4. Preparation of hydrophilic and hydrophobic patterned substrates: The OTS-SAM hydrophobic substrate is covered by a photomask and treated with ultraviolet ozone (UV / O3) for 8-10 min to obtain a patterned self-assembled monolayer film. The self-assembled monolayer in the covered area is retained and continues to exhibit hydrophobicity, while the uncovered area exhibits hydrophilicity due to the removal of the monolayer by ultraviolet ozone.

[0060] 5. Preparation of patterned oxide semiconductor thin films: a) Preparation of IGZO semiconductor thin films in Example 1: The precursor solution from Example 1(2a) was spin-coated (3000-4000 rpm, 30-60 s) onto a hydrophilic / hydrophobic patterned substrate. Due to the difference in surface energy between hydrophilic and hydrophobic surfaces on the substrate, the precursor solution selectively wets the hydrophilic regions on the substrate. After removing the solvent by pre-annealing the spin-coated substrate at 100-110°C for 5-10 min, it was annealed at 300-400°C for 1-2 h to finally obtain a patterned IGZO semiconductor thin film, as shown below. Figure 4 As shown. b) Comparative example IZO semiconductor thin film preparation: Spin coating and annealing conditions were the same as those in the example.

[0061] 6. Source / drain electrode deposition: A metal mask is deposited on a patterned oxide semiconductor thin film, and 40-50 nm aluminum is deposited on the oxide semiconductor by vacuum evaporation as the source / drain electrodes of the device, completing the fabrication of the thin-film transistor and array. Figure 5 As shown. The device has a channel length of 100 μm and a channel width of 1000 μm.

[0062] like Figure 3 The diagram shows the structure of a single thin-film transistor device, from bottom to top: a heavily doped Si gate, a SiO2 dielectric layer, an indium gallium zinc oxide (IGZO) layer, an Al source, and a drain electrode.

[0063] 7. Electrical performance characterization: The transfer characteristic curves and output characteristic curves of the transistors in the array were tested, and the test results are as follows: Figures 6-7 As shown, this indicates that the device has good switching performance.

[0064] 8. Voltage Gain Verification: Based on the thin-film transistors in the array above, a current-source inverter was constructed. The circuit diagram and test results are as follows: Figure 8 As shown, this indicates that the device can achieve a voltage gain of ~155V / V.

[0065] 9. Multi-channel physiological electrical signal monitoring: Two commercially available gel electrodes are used to connect the potential difference of a specific physiological electrical signal to the gate of a transistor in series. Real-time recording of source-drain current changes reflects changes in the physiological electrical signal. Test results are shown below. Figure 9 As shown. Electrooculogram (EOG) signal monitoring: Two commercially available gel electrode pads are attached to the brow bone and lower eyelid respectively. The EOG signal potential difference is connected in series with the transistor gate. A voltage of 0.1–1V is applied to the source and gate respectively. Real-time recording of source-leakage current changes reflects the potential changes during eye movement. Electrocardiogram (ECG) signal monitoring: Two commercially available gel electrode pads are attached to the left arm and right chest respectively. The EOG signal potential difference is connected in series with the transistor gate. A voltage of 0.1–1V is applied to the source and gate respectively. Real-time recording of source-leakage current changes allows for ECG signal monitoring. Figure 12 As shown.

[0066] Figure 10 The output characteristic curve of the comparative IZO transistor in this embodiment of the invention; Figure 11 This is a circuit diagram and gain curve of a comparative IZO thin-film transistor inverter in an embodiment of the present invention.

[0067] The key technologies of this application are: 1. A silane-treated substrate surface hydrophilic / hydrophobic patterning method is used to achieve selective deposition of oxide precursor solutions, thereby realizing oxide semiconductor thin film patterning and transistor array fabrication. 2. The in-situ signal amplification function of oxide thin film transistors is used as a preamplifier for body surface physiological electrical signals, connecting the physiological potential signal in series with the transistor gate to achieve amplification and monitoring of body surface physiological electrical signals. 3. Spatially independent patterned transistor arrays greatly reduce crosstalk between devices during signal acquisition, enabling efficient amplification and synchronous acquisition of multiple physiological signals such as ECG and EOG, simplifying the circuitry of traditional physiological electrical signal acquisition systems, reducing power consumption, and constructing a new multi-channel physiological electrical signal preamplifier signal monitoring scheme.

[0068] This invention proposes a method for fabricating and monitoring physiological electrical signals using an oxide thin-film transistor array based on hydrophilic / hydrophobic patterning. Its advantages include: 1. Utilizing patterned self-assembly monolayer technology to achieve hydrophilic / hydrophobic patterning on the substrate surface, inducing the deposition of oxide precursor solution in the hydrophilic region of the substrate, thereby realizing oxide semiconductor patterning and controllable fabrication of the transistor array. Compared with the complex photolithography patterning process in organic electrochemical transistor fabrication, this technology has advantages such as simple equipment, easy operation, strong controllability, low cost, and suitability for mass production. 2. The basic principle of single-channel physiological electrical signal monitoring in this invention is as follows: the potential difference of physiological electrical signals such as electrocardiogram (ECG) or electrooculogram (EOG) is connected in series with the transistor gate as the gate voltage fluctuation input, real-time modulation of the semiconductor channel conductance change, and outputting amplified source-drain current signals through device gain, thereby achieving high-sensitivity monitoring of physiological electrical signals. The IGZO oxide thin-film transistor fabricated in this invention exhibits excellent in-situ signal amplification performance (voltage gain of ~155V / V). Only 0.1V voltage needs to be applied to the gate and source respectively to amplify and acquire physiological electrical signals such as ECG and EOG, thus significantly reducing the power consumption of traditional physiological electrical signal acquisition circuits. 3. During multi-channel physiological electrical signal monitoring, ECG and EOG signals are connected in series with the gates of different devices in the transistor array. The conductance changes of the semiconductor channels in the corresponding devices are modulated, and the source-drain current signals corresponding to the ECG and EOG signals are amplified through the gain of each device. Combined with the previously independently developed real-time physiological electrical signal acquisition software, the output current signals of each device are recorded synchronously, thereby achieving synchronous monitoring of multi-channel physiological electrical signals. In this scheme, the patterned oxide semiconductor thin film spatially separates the transistor devices in the array, greatly avoiding crosstalk between devices during signal acquisition. Combining the aforementioned device gain and in-situ signal amplification performance, efficient amplification and synchronous acquisition of dual-channel ECG and EOG signals from the body surface are achieved, providing a new solution for long-term, accurate acquisition of multi-channel physiological electrical signals.

[0069] The present invention also provides a computer, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the method described thereon.

[0070] The present invention also provides a storage medium having a computer program stored thereon, which, when executed by a processor, implements the method described thereon.

[0071] The above are merely preferred embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A method for fabricating and monitoring physiological electrical signals of an oxide thin-film transistor array based on hydrophilic and hydrophobic patterning, characterized in that, include: Patterned self-assembly monolayer technology is used to form patterns with hydrophilic and hydrophobic regions on the substrate surface; By utilizing the surface energy difference between hydrophilic and hydrophobic regions, an oxide semiconductor precursor solution is spin-coated to selectively wet the hydrophilic regions. After pre-annealing and annealing, a patterned oxide semiconductor thin film is obtained. Metal electrodes are deposited on patterned oxide semiconductor thin films using a vacuum evaporation method to form a thin-film transistor array. Patterned oxide semiconductor thin films spatially separate the transistor devices in a thin-film transistor array; the spatially independent patterned transistor arrays reduce crosstalk between devices during signal acquisition. Using the thin-film transistor array as a preamplifier, the channel conductance is modulated in real time by connecting the potential difference of the physiological electrical signal in series to the transistor gate, thereby realizing the synchronous monitoring of multi-channel physiological electrical signals. The process of forming a pattern with hydrophilic and hydrophobic regions on a substrate surface includes: Hydrophilic and hydrophobic patterning of the substrate surface was achieved by silane treatment. The cleaned Si / SiO2 substrate was modified by self-assembly of a monolayer based on an n-octylchlorosilane-n-hexane solution to obtain a hydrophobic substrate. The hydrophobic substrate is selectively treated with ultraviolet ozone under a mask. The masked area retains hydrophobicity, while the uncovered area becomes hydrophilic after the monolayer is removed by ultraviolet ozone, thus generating a pattern with both hydrophilic and hydrophobic regions. The process of obtaining patterned oxide semiconductor thin films includes: Indium gallium zinc oxide semiconductor precursor solution was prepared by sol-gel method. The precursor solution was applied to the surface of hydrophilic and hydrophobic patterned substrate by spin coating process. The surface energy difference between hydrophilic and hydrophobic regions was used to induce selective spreading and confined wetting of the solution, so that the precursor solution only adhered to the hydrophilic region, and the spin-coated substrate was obtained. The spin-coated substrate was treated using a stepped temperature annealing process. It was first pre-annealed at 100–110°C and then high-temperature annealed at 300–400°C to obtain a patterned oxide semiconductor thin film. The process for preparing the indium gallium zinc oxide semiconductor precursor solution includes: Indium nitrate hydrate, gallium nitrate hydrate, and zinc nitrate hydrate were dissolved in 2-methoxyethanol at a concentration of 0.1 mol / L, and stirred at 800-1000 rpm for 2-3 hours at 50-60℃ to obtain indium nitrate solution, gallium nitrate solution, and zinc nitrate solution, respectively. The indium nitrate solution, gallium nitrate solution, and zinc nitrate solution were mixed in a molar ratio of 7:1:2 and stirred at 800-1000 rpm for 10-12 hours at room temperature to obtain a uniform and stable indium gallium zinc oxide precursor solution.

2. The method for fabricating and monitoring physiological electrical signals of an oxide thin-film transistor array based on hydrophilic-hydrophobic patterning according to claim 1, characterized in that, The process of forming a thin-film transistor array includes: A metal mask is used to cover a patterned oxide semiconductor thin film. Aluminum electrodes are deposited patterned at both ends of the semiconductor channel region using a vacuum thermal evaporation process to form the source and drain of the transistor, thus completing the fabrication of the thin film transistor array. The channel length and width are controlled to be 100 μm and 1000 μm, respectively.

3. The method for fabricating and monitoring physiological electrical signals of an oxide thin-film transistor array based on hydrophilic-hydrophobic patterning according to claim 1, characterized in that, The process of achieving synchronous monitoring of multi-channel physiological electrical signals includes: Physiological electrical signals are acquired using gel electrodes; The obtained potential difference signal is then input to the gate of the corresponding transistor in the transistor array based on the physiological electrical signal. A bias voltage of 0.1-1 V is applied to the source and gate respectively, and the real-time changes in physiological electrical signals are reflected by monitoring the changes in source and drain current. By synchronously recording the output signals of each transistor in the array through a multi-channel data acquisition system, the simultaneous acquisition and monitoring of multiple physiological electrical signals can be achieved.

4. A computer, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the method as described in claim 1.

5. A storage medium having a computer program stored thereon, characterized in that, When the program is executed by the processor, it implements the method as described in claim 1.

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