一种功率半导体器件及其散热系统的热参数辨识方法、系统、设备及存储介质
By measuring the device case temperature and heat sink temperature under thermal equilibrium conditions, and combining them with a one-dimensional third-order RC thermal network model, the problem of needing to change the heat dissipation conditions or measure the junction temperature drop curve in the prior art is solved, and more accurate thermal parameter identification and junction temperature estimation under non-equilibrium conditions are achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HOHAI UNIV
- Filing Date
- 2025-02-28
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies require altering the heat dissipation conditions or measuring the junction temperature drop curve when identifying the thermal parameters of power semiconductor devices and their heat dissipation systems. This leads to inaccurate calculations of thermal resistance and thermal capacity, increasing the difficulty of testing.
By measuring the device case temperature, heat sink temperature, and losses under thermal equilibrium conditions, the thermal resistance is calculated using formulas, and the heat capacity is identified by combining a one-dimensional third-order RC thermal network model, thus avoiding changes to the heat dissipation conditions and measuring the junction temperature drop curve.
It improves the accuracy of thermal resistance and heat capacity calculations, reduces testing difficulty, and enables the estimation of junction temperature under non-equilibrium conditions, overcoming the limitations of existing technologies.
Smart Images
Figure CN121114594B_ABST